CN100481306C - Ion source device for low-energy ion beam material preparing method - Google Patents
Ion source device for low-energy ion beam material preparing method Download PDFInfo
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- CN100481306C CN100481306C CNB2003101211783A CN200310121178A CN100481306C CN 100481306 C CN100481306 C CN 100481306C CN B2003101211783 A CNB2003101211783 A CN B2003101211783A CN 200310121178 A CN200310121178 A CN 200310121178A CN 100481306 C CN100481306 C CN 100481306C
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- crucible
- arc chamber
- inner core
- chamber body
- ion source
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Abstract
This invention relates to ion beam technique, which is applied in the low energy ion beam process method and the ion source device with arc room and crucible. The arc room and the crucible are one part and separate front and back with air hole between them; to load upper and down double screw wires in the arc room; the crucible is of stand type with two kinds of inner cylinders. The reaction container can load solid materials reacting with the working gas. The vapor container can adjust the light wire current between the adjustable assistant heating to control the working temperature of the control source.
Description
Technical field
The present invention relates to ion beam technology, it is a kind of ion source device that can in the low energy ion beam material preparation method, use, have that simple in structure, stable work in work, quality of beam are good, ionization efficient height, can select characteristics such as the source material scope utilized is wide, this device also is applicable to other relevant ions bundle technology.
Background technology
The low energy ion beam material preparation method of mass separation is a kind of developing material preparation new technology that is in, and also can be called for short the low energy ion beam material preparation method.With other ripe ion beam material preparation methods, as ion sputtering, ion injection, ion etching, difference such as plasma-deposited, this method is to adopt to carry out the growth and the preparation of material through the lower-energy material ion of mass separation.Can be used for the growth of difficult purification, high-melting-point and special type function material, also can be used for high-concentration dopant, the injection of shallow junction impurity and the ise etc. of material.Wide because of selecting to prepare material ranges, this method is to explore a kind of strong process means of preparation new material.
The device systems that is used for the low energy ion beam material preparation method has two kinds at present, the one, single ion beam apparatus system, carry out the growth or the preparation of material only with single ionic, another kind is the double-ion beam device systems, can utilize two kinds of ions to carry out the growth or the preparation of material, can prepare the compound film that synthesizes dual element than the low energy double-ion beam system as shown in Figure 2.Which kind of equipment no matter, its ion beam apparatus part all is made of following five parts: ion source, magnetic analyzer, electricity (magnetic) quadrupole lens, electrostatic deflection plates, retarding lens (seeing accompanying drawing 2 for details).And ion source is a most important component in the low energy ion beam material preparation system, the ion that is used for preparing material is by this device generation, and the stability of its ionization efficient, quality of beam, generation ionic species and work is determining the service behaviour of low energy ion beam material preparation system.The ion source that is used for low energy ion beam material preparation system at present mainly contains two types: Fu Ruiman (Freeman) type and Bai Nasi (Bernus) type.At the initial stage of this technical development, Fu Ruiman (Freeman) the type ion sources that adopt more, this type ion source thermal power height, the kind that can produce ion is many, though the solid source material that can utilize elevated operating temperature is as operation material, but the very fast consumption of direct sputter that is subject to ion during because of its cathode filament work attenuates, the useful life of filament is short, thereby influenced its job stability, quality of beam and ionization efficient are not fine, have limited its being extensive use of in the low energy ion beam material preparation technology yet.Bai Nasi (Bernus) type ion source is the ion source that another type is used in the low energy ion beam material preparation technology, its quality of beam and job stability are better than Fu Ruiman (Freeman) type ion source, but original Bai Nasi (Bernus) type ion source cathode filament is positioned at arc chamber body upper end, thermal power is less, though it is very high to gas operation material ionization efficient, but be not suitable for adopting the solid source material of elevated operating temperature as operation material, thereby producible ionic species is limited, and this has restricted its being extensive use of in the low energy ion beam material preparation technology.How to improve ionogenic job stability, ionization efficient and quality of beam, expansion can be selected the source material scope utilized, increases producible ionic species, is still present low energy ion beam material preparation technology and develops technical problem to be solved.
Summary of the invention
The objective of the invention is technical deficiency, a kind of novel ion source device that the low energy ion beam material preparation method is used that is suitable for is provided for the ion source device that overcomes the former use of low energy ion beam material preparation system.
A further object of the present invention is the novel ion source device that is provided, and can produce the ion of most elements in the periodic table of elements, particularly can obtain the high-melting-point that is difficult to prepare with the other materials preparation method, the ion of difficult purification material.
The technical scheme that technical solution problem of the present invention is adopted is:
1, improve the structural design of original Bai Nasi (Bernus) type ion source arc chamber body:
Two helix heater filaments are equipped with at two ends about in the arc chamber body after the improvement, and there is assisted heating device both sides, and reflecting plate also is equipped with in the filament back.Be characterized in:
1) cathode filament is positioned at arc chamber body two ends up and down, can increase the space of arc chamber, and filament is subjected to the direct sputter of ion when reducing work, improves filament useful life and keeps the stable of operating state;
2) the two filaments of helical form can increase the primary electron density of hot cathode emission, add the reflex of the back reflecting plate of filament to electronics, can improve ionization efficient;
3) two filaments are parallel on the filament heating power supply, and heat at two ends up and down in the arc chamber body, add the assisted heating device of both sides, can make the uniform distribution of temperature field when working in the arc chamber body, have improved ionogenic thermal power.
2, improve original ionogenic crucible structural design:
Crucible and arc chamber body are designed to one and the front and rear part that is placed in, and arc chamber body rear wall has row's air admission hole to communicate with arc.Crucible adopts vertical design, is made of several parts such as outer wall, inner core, assisted heating device and temperature-measuring heat couples.The crucible inner core is designed to two kinds of forms:
1) reaction type:
Be stamped air admission hole on this structure inner core, the lower end has sieve shape pore to communicate with cavity between outer wall, can adorn the little broken fast solid source material with reacting gas generation chemical reaction, such as oxide or elemental metals source material.During work, reacting gas can enter from the air admission hole of crucible loam cake, there is the conduit of bringing valve into to communicate on the air admission hole with the outer reaction cartridge gas containers of ion source, flow by needle valve control air inlet, reacting gas is from top to bottom by the solid source material, and carry the work atmosphere that reaction generates, enter cavity between inner core and outer wall by tube bottom in the crucible, and then one between outer wall and arc chamber body rear wall arranged air admission hole and entered that ionization goes out ion in the arc chamber body before crucible; This kind design can guarantee that reacting gas and source material fully react, and improves the utilance of source material.
2) evaporator type:
Shut this inner core lower end, and top has little venthole near the inside drum cover place, and transpirable solid source material operation material (as chloride) is contained in the inner core.By regulating the electric current of assistant heating (crucible heating, arc chamber heating) and filament heating power supply, control heating-up temperature, temperature range is 150 ~ 850 ℃.The source material work atmosphere that is evaporated enters cavity between inner core and outer wall by the aperture on top, and then the air admission hole between outer wall and arc chamber body rear wall enters ionization in the arc chamber body before crucible.
The range of choice of available source material operation material has been expanded in the multi-functional design of crucible, and gas, oxide, chloride, elemental metals or other solid operation materials all may produce ion in this ion source.
Specifically, for achieving the above object, technical solution of the present invention provides a kind of ion source device that is used for the low energy ion beam material preparation method, comprise arc chamber body and crucible two parts, every part is furnished with assisted heating device, its arc chamber body and the crucible front and rear part that is integral and is placed in, arc chamber body rear wall have row's air admission hole to be communicated with crucible; A helical heater respectively is equipped with at two ends about in the arc chamber body, and respectively there is a reflecting plate in the two filaments outside, has ion to draw slit on the front shroud of arc chamber body antetheca; Crucible adopts vertical, is made of outer wall, inner core and temperature-measuring heat couple, between outer wall and inner core cavity is arranged, and it is one with arc chamber body rear wall that outer wall is positioned at inner part, and the row's air admission hole that is connected is provided thereon.
Described ion source device, its helical heater is connected and fixed with the filament seat then by the arc chamber body side surface filament seat installing hole at the two ends arc chamber body of packing into up and down; The filament seat has two covers up and down, and every cover comprises the long and short two bearing body, on the pedestal of drawing money on credit reflecting plate is installed, and between filament seat and the arc chamber body insulating ceramics cover is arranged.
Described ion source device, its described crucible inner core is reaction type crucible inner core or evaporator type crucible inner core.
Described ion source device, its described reaction type crucible inner core is stamped air admission hole on the inner core, and sieve shape venthole is arranged at the bottom, but the solid source material of splendid attire and working gas reaction, working gas is from top to bottom by source material and fully reaction with it.
Described ion source device, its described evaporator type crucible inner core, venthole is arranged at inner core top, but splendid attire can evaporate the source material of material atmosphere.
Described ion source device, two filaments in its described arc chamber body are and are connected to the filament heating power supply, two cover heater strips are that series connection is received on the arc chamber heating power supply about the assisted heating device of arc chamber body both sides, and two cover heater strips also are that series connection is received on the crucible heating power supply about the assisted heating device of crucible both sides.
Described ion source device, the electric current of arc chamber heating power supply, crucible heating power supply and filament heating power supply that can be by adjusting assisted heating device is controlled the working temperature of this ion source device, and its operating temperature range is 150～850 ℃.
Described ion source device, its described source material is the solid operation material of gas, oxide, chloride, elemental metals.
The invention has the beneficial effects as follows: 1) ionogenic arc chamber body and crucible are designed to one and separate front and back, and be simple and practical; 2) good, the ionization efficient height of stable work in work, quality of beam, producible ionic species are many; 3) the source material range of choice is wide and utilance is high, has reduced the cost of material preparation.4) this invention is applicable to low energy ion beam material preparation method and other relevant ions bundle technology.
That the present invention has is simple in structure, stable work in work, quality of beam are good, ionization efficient height, can select characteristics such as the source material scope utilized is wide.The ion of most elements in the periodic table of elements be can produce, the high-melting-point that is difficult to prepare with the other materials preparation method, the ion of difficult purification material particularly can be obtained.The ionic species that ion source produces is many, is beneficial to the process characteristic that performance low energy ion beam material preparation method can extensively be explored the preparation new material.
Description of drawings
The lateral sectional view of Fig. 1 .1 ion source device structure of the present invention;
The vertically preceding profile of Fig. 1 .2 ion source device structure of the present invention;
The transverse cross-sectional view of Fig. 1 .3 ion source device structure of the present invention;
The crucible inner core profile of Fig. 1 .4 ion source device of the present invention;
The circuit diagram of Fig. 1 .5 ion source device of the present invention;
Fig. 2 low energy double-ion beam material preparation system schematic.
Embodiment
Ion source device structure of the present invention and circuit theory diagrams are as shown in Figure 1.
This ion source device comprises arc chamber body 1 and crucible 11 two parts, and every part is furnished with assisted heating device: arc chamber heater 2, crucible heater 12.Arc chamber body 1 is designed to one and separate front and back with crucible 11, between have row's air admission hole 9 to be communicated with.The inner chamber of arc chamber body 1 also claims arc chamber or vacuum discharge chamber, and double helix shape filament 3 (direct-heated cathode) and reflecting plate 4 are up and down arranged in the arc chamber.Arc chamber wall is in anode potential, also claims anode wall, rear wall to have row's air admission hole 9 to communicate with crucible 11, has ion to draw slit 8 on the front shroud 7 of antetheca.Double helix shape filament 3 can be packed into by the filament seat installing hole at two ends about arc chamber body 1 side, it is fixing to load onto filament seat 5 then, filament seat 5 has two covers up and down, every Analysis of Nested Design becomes to have the long and short two bearing body, the pedestal 5-1 that draws money on credit can install reflecting plate 4, and insulating ceramics cover 5-3 insulation is arranged between filament seat 5 and the arc chamber body 1.Crucible 11 is positioned at the back of arc chamber body 1, adopts vertical design, is made of several parts such as outer wall, inner core 13, ancillary crucible heater 12 and temperature-measuring heat couples 18.Crucible inner core 13 has two kinds of forms, reaction type crucible inner core 13-1 is stamped air admission hole 13-1a on it, sieve shape venthole 13-1b is arranged at the bottom, but splendid attire needs the solid source material with the working gas reaction, and working gas is from top to bottom by source material and fully reaction with it; Venthole 13-2b is arranged at evaporator type crucible inner core 13-2 top, but splendid attire can evaporate the source material of material atmosphere.Control ionogenic working temperature by the electric current of adjusting assistant heating power supply 26,25 and filament heating power supply 23.
Ion source power parameter of the present invention sees Table 1, and its operation principle is identical with common Bai Nasi Bernus type ion source operation principle.During work, the electric current of earlier logical working gas or adjustment assistant heating power supply 26,25 and filament heating power supply 23 evaporates material atmosphere, the material atmosphere that working gas, reaction generate or evaporate is entered in arc chamber (vacuum discharge chamber) body by crucible 11, the air inflow that control enters arc chamber should make the outer vacuum degree of ion source arc chamber be not more than 5 * 10
-5Torr; Add source positive high voltage 21, arc voltage 24, source additional magnet electric current 27 then, the electric current of adjusting filament heating power supply 23, arc chamber heating power supply 25, crucible heating power supply 26 makes arc chamber and crucible 11 be in specified working temperature (this temperature is different because of the source material classification); The inner free electron of hot cathode 3 (double helix shape filament) obtains enough energy metal surface that flies out, the electronics of launching is called primary electron, primary electron is done to quicken the spiral progressive motion and is obtained bigger momentum in magnetic field, source, the electronics of high energy and the collision of material atmosphere make its discharge ionization go out the ion of positively charged, and form stable plasmoid in arc chamber (arc chamber); The action of a magnetic field of source additional magnet 27 can increase the path of electron motion effectively, increases the collision frequency of electronics and gas atom or molecule.In addition, the ion that ionization produces is done the spiral progressive motion along the magnetic line of force in magnetic field, increased the time of staying of ion in arc chamber (arc chamber), has increased the density of plasma greatly; Adjust at last and focus on extraction pole voltage 22, make ion quicken to be shaped, draw slit 8 by the ion of arc chamber front shroud 7 and draw ion beam 28.The operating temperature range of ion source device of the present invention is 150 ℃ to 850 ℃.
Utilize the low energy ion beam material preparation method to carry out the growth of material and preparation process following (can referring to accompanying drawing 2): the ion beam 28 that is produced by ion source is a high energy, and its energy is generally tens kilo electron volts (KeV); High energy ion beam obtains the high energy ion beam of the isotopically pure of the material of wanting after the magnetic field of the magnetic analyzer (also claiming mass analyzer) of low energy ion beam material preparation system is selected to analyze; The high energy ion beam of isotopically pure is after the secondary focusing of electricity (or magnetic) quadrupole lens, and the electric deflection by electrostatic deflection plates enters the growth room again; One retarding lens device is arranged in the growth room, can make the energy of the energetic ion of isotopically pure be reduced to tens, become low energy ion to hundreds of electron-volt (eV); At last, utilize the low energy ion of the isotopically pure that obtains on substrate, to carry out the growth and the preparation of material.Table 2 has been enumerated some embodiments of the present invention.
Table 1: novel ion source power parameter table
Table 2: the ion that novel ion source produces for example
Claims (9)
1. ion source device that is used for the low energy ion beam material preparation method, comprise arc chamber body and crucible two parts, every part is furnished with assisted heating device, it is characterized in that: arc chamber body and the crucible front and rear part that is integral and is placed in, arc chamber body rear wall have row's air admission hole to be communicated with crucible; A helical heater respectively is equipped with at two ends about in the arc chamber body, and respectively there is a reflecting plate in the two filaments outside, has ion to draw slit on the front shroud of arc chamber body antetheca; Crucible adopts vertical, is made of outer wall, inner core and temperature-measuring heat couple, between outer wall and inner core cavity is arranged, and described row's air admission hole is connected with the arc chamber body at crucible outer wall leading flank.
2. ion source device as claimed in claim 1 is characterized in that: described helical heater is installed in the arc chamber body by the filament seat installing hole at two ends about the arc chamber body side surface, is connected and fixed with the filament seat then; The filament seat has two covers up and down, and every cover comprises the long and short two bearing body, on the pedestal of drawing money on credit reflecting plate is installed, and between filament seat and the arc chamber body insulating ceramics cover is arranged.
3. ion source device as claimed in claim 1 is characterized in that: described crucible inner core is reaction type crucible inner core or evaporator type crucible inner core.
4. ion source device as claimed in claim 3, it is characterized in that: described reaction type crucible inner core, be stamped air admission hole on the inner core, sieve shape venthole is arranged at the bottom, but the solid source material of splendid attire and working gas reaction, working gas are from top to bottom by source material and fully reaction with it.
5. ion source device as claimed in claim 3 is characterized in that: described evaporator type crucible inner core, and venthole is arranged at inner core top, but splendid attire can evaporate the source material of material atmosphere.
6. ion source device as claimed in claim 1, it is characterized in that: two filaments in the described arc chamber body are and are connected to the filament heating power supply, two cover heater strips are that series connection is received on the arc chamber heating power supply about the assisted heating device of arc chamber body both sides, and two cover heater strips are that series connection is received on the crucible heating power supply about the assisted heating device of crucible both sides.
7. ion source device as claimed in claim 6, it is characterized in that: the electric current of arc chamber heating power supply, crucible heating power supply and filament heating power supply by adjusting assisted heating device is controlled the working temperature of this ion source device, and its operating temperature range is 150～850 ℃.
8. ion source device as claimed in claim 5 is characterized in that: the source material in the described evaporator type crucible inner core is the chloride as the solid source material.
9. ion source device as claimed in claim 4 is characterized in that: the solid source material in the reaction type crucible inner core is oxide or elemental metals.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101211783A CN100481306C (en) | 2003-12-22 | 2003-12-22 | Ion source device for low-energy ion beam material preparing method |
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| CNB2003101211783A CN100481306C (en) | 2003-12-22 | 2003-12-22 | Ion source device for low-energy ion beam material preparing method |
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| CN100481306C true CN100481306C (en) | 2009-04-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102280348A (en) * | 2010-06-08 | 2011-12-14 | 江苏天瑞仪器股份有限公司 | Electron impact ion source control system |
| CN103247505B (en) * | 2013-03-20 | 2016-01-27 | 宁波瑞曼特新材料有限公司 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
| CN106356276B (en) * | 2016-10-18 | 2017-12-26 | 中国原子能科学研究院 | A kind of gasification electric discharge device of Electromagnetic isotope separator ion gun |
| CN107045971B (en) * | 2016-10-18 | 2018-03-13 | 中国原子能科学研究院 | A kind of Electromagnetic isotope separator ion gun |
| CN106561447A (en) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | Radio frequency source high density low energy ion beam biological modification equipment |
| CN110571117B (en) * | 2019-09-21 | 2022-07-08 | 厦门宇电自动化科技有限公司 | Temperature-controllable ion implanter and temperature control method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886355A (en) * | 1991-05-14 | 1999-03-23 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
| CN1312578A (en) * | 2000-02-25 | 2001-09-12 | 日新电机株式会社 | Ion source and operation method thereof |
| CN1380439A (en) * | 2002-04-16 | 2002-11-20 | 北京科技大学 | Hall type ion auxiliary evaporation source |
| CN1383179A (en) * | 2001-04-24 | 2002-12-04 | 日新电机株式会社 | Ion source evaporator |
-
2003
- 2003-12-22 CN CNB2003101211783A patent/CN100481306C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886355A (en) * | 1991-05-14 | 1999-03-23 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
| CN1312578A (en) * | 2000-02-25 | 2001-09-12 | 日新电机株式会社 | Ion source and operation method thereof |
| CN1383179A (en) * | 2001-04-24 | 2002-12-04 | 日新电机株式会社 | Ion source evaporator |
| CN1380439A (en) * | 2002-04-16 | 2002-11-20 | 北京科技大学 | Hall type ion auxiliary evaporation source |
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