CN100483631C - Localized annealing of metal-silicon carbide ohmic contacts and devices so formed - Google Patents
Localized annealing of metal-silicon carbide ohmic contacts and devices so formed Download PDFInfo
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- CN100483631C CN100483631C CNB2004800302453A CN200480030245A CN100483631C CN 100483631 C CN100483631 C CN 100483631C CN B2004800302453 A CNB2004800302453 A CN B2004800302453A CN 200480030245 A CN200480030245 A CN 200480030245A CN 100483631 C CN100483631 C CN 100483631C
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 275
- 238000000137 annealing Methods 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 123
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 54
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
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- 239000010936 titanium Substances 0.000 claims description 6
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Abstract
A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.
Description
The cross reference of provisional application
The title that the application has required to submit on August 14th, 2003 is the U.S. Provisional Application No.60/495 of " Laser Annealingof Ohmic Contacts to SiC ", 189 rights and interests, and the title that on August 15th, 2003 submitted is the U.S. Provisional Application No.60/495 of " Laser Annealing of OhmicContact to SiC ", 284 rights and interests, described two assignees that application has all transferred the application have comprised its all disclosures herein as a reference.
Technical field
The present invention relates to microelectronic device, relate in particular to the making of light-emitting device (LED) and the LED of formation thereof.
Background technology
Be well known that in the light-emitting device based on carborundum, the thickness of carborundum (SiC) substrate can influence the required forward voltage of the described device of operation at given current level place.For example, can have the substrate of the about 250 μ m of thickness (+/-25 μ m), approximately have about 3.5 volts relevant forward operating voltage under the 10mA forward operating current from the light-emitting diode C450-CB230-E1000 that Cree company obtains based on SiC.In addition, the thickness that reduces the SiC substrate of LED can reduce forward voltage, and this can obtain the reduction that this diode power consumes.
Be well known that also many electronic installations can be incorporated into and have the isolated system that reduces thickness, so that the general thickness of electronic installation can reduce.For example, cellular manufacturer can use the mounted on surface led chip to be used for illuminating from behind the thickness of the parts of cell phones displays with reduction.Therefore, the thickness of reduction SiC substrate can also make these devices be applied in the little electronic installation of these types.
Inject ion by for example back to the SiC wafer, it is known to form ohmic contact under low temperature/room temperature on SiC.Yet, if injected the attenuation before forming ohmic contact of SiC substrate, in the attenuation process, perhaps can remove doped region so, this may make and inject surplus.Owing to inject and can carry out in later step, therefore perhaps deposition does not have ohm property so that the metal that forms ohmic contact is on being deposited on substrate.For example at U.S. Patent application No.09/787, the ion that is used to form ohmic contact just to be discussed in 189 and 10/003,331 and have been injected, its all disclosures are included in this as reference
By plated metal,, and at high temperature (such as the temperature that is higher than 900 ℃) metal is annealed that to form the metal ohmic contact known such as nickel.High annealing perhaps can destroy the epitaxial loayer that is included in the gallium nitride-based material on the SiC substrate.Therefore, need a kind of being used to form and the modification method of expecting the substrate ohmic contact of material such as SiC, GaN, InGaN etc.
Description of drawings
Fig. 1-4 shows the sectional view that forms the metal-silicon carbide ohmic contact according to some embodiments of the present invention in light-emitting device.
Fig. 5-7 shows other embodiment according to the present invention form the metal-silicon carbide ohmic contact in light-emitting device sectional view.
Fig. 8-11 shows other embodiment according to the present invention form the metal-silicon carbide ohmic contact in light-emitting device sectional view.
Figure 12-17 shows other embodiment according to the present invention form the metal-silicon carbide ohmic contact in light-emitting device sectional view.
Figure 18-20 shows other embodiment according to the present invention form the metal-silicon carbide ohmic contact in light-emitting device sectional view.
Figure 21-22 shows the sectional view according to the metal-silicon carbide ohmic contact in the formed light-emitting device of some embodiments of the present invention.
Figure 23 shows the floor map that stands the silicon carbide substrates of laser annealing according to some embodiments of the present invention.
Figure 24 shows the rough schematic view that comprises the metal-silicon carbide ohmic contact on each relative ohmic contact border according to some embodiments of the present invention.
Figure 25 shows a plurality of simplification floor map that defined the metal-silicon carbide ohmic contact of inclination candy strip according to some embodiments of the present invention.
Figure 26 shows a plurality of metals that define the striped circular pattern--the simplification floor map of carborundum ohmic contact according to some embodiments of the present invention.
Figure 27 shows a plurality of simplification floor map that defined the metal-silicon carbide ohmic contact of ring-type circular pattern according to some embodiments of the present invention.
Figure 28 shows the typical laser-mask according to some embodiments of the present invention, can be by this mask projecting laser so that the metal-silicon carbide ohmic contact is annealed.
Figure 29 A shows the typical mask with softening edge feature according to some embodiments of the present invention.
Figure 29 B shows the detailed view of part shown in Figure 29 A.
Summary of the invention
Can provide the differential annealing of the metal-silicon carbide ohmic contact in the semiconductor device and the device of formation thereof according to embodiments of the invention.According to these embodiment, can form contact by following manner: on carborundum (SiC) layer, form metal, the interface location of metal and SiC layer is annealed so formed metal-SiC material, and avoid being annealed and then avoid forming metal-SiC material in the position on the SiC layer.In according to some embodiments of the present invention, described layer can be the SiC substrate.
In according to some embodiments of the present invention, annealing can comprise: anneal at interface location, anneal to avoid according to pattern in the annealing of described position. in according to some embodiments of the present invention, described interface location can be first interface location, and the position on the described SiC substrate can be the second contact surface position of metal and SiC substrate.Annealing can comprise by on the metal level of the opening on the mask layer with laser radiation to the first interface location, and uses mask layer to stop that the laser relative with the second contact surface position anneals in the second contact surface position avoiding.
In according to some embodiments of the present invention, annealing can comprise the excitation laser relative with described interface location with laser radiation to the metal level of described interface location, and de-energisation is annealed in this position avoiding with respect to the laser of described position.In according to some embodiments of the present invention, the formation metal can be included in and form metal on the SiC substrate to form and SiC substrate position spaced.
In according to some embodiments of the present invention, metal can form with at described interface location expose portion SiC substrate with pattern form, and described annealing can comprise the excitation laser relative with described interface location with laser radiation on the metal level of described interface location.Can keep the laser excitation with respect to described position.
In according to some embodiments of the present invention, the metal at interface location place-SiC material can be the metal ohmic contact on the substrate dorsal part, described substrate dorsal part with its on to have a front side of substrate of epitaxial loayer relative.In according to some embodiments of the present invention, annealing can comprise with laser radiation on interface location to form the ohmic contact that at least one comprises relative ohmic contact border, between described ohmic contact border, have the non-ohmic contact zone.
In according to some embodiments of the present invention, described at least one ohmic contact can be a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition form the bar paten at oblique angle with the side of device.In according to some embodiments of the present invention, described at least one ohmic contact can comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition with the bar paten of described device parallel sided.
In according to some embodiments of the present invention, described at least one ohmic contact can comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition circular pattern.In according to some embodiments of the present invention, described interface location can be first interface location, and the described position on the SiC substrate comprises the second contact surface position of metal and SiC substrate.Annealing can comprise electron beam is radiated on the interface location, and stop electron beam to shine described second contact surface position.
In according to some embodiments of the present invention, the contact that is formed for light-emitting device can be included on carborundum (SiC) substrate and form metal, and carry out laser annealing at the interface location of metal and SiC substrate according to pattern, to form metal-silicon carbide material corresponding to described pattern.In according to some embodiments of the present invention, form metal and can be included in formation covering metal on the substrate.Laser annealing can comprise the opening that passes in the mask with laser radiation at described interface location therefore to form metal-SiC material, described mask has defined pattern.The use mask can stop the relative laser of other interface location with metal and SiC substrate.
In according to some embodiments of the present invention, form metal and can be included in formation covering metal on the substrate, wherein laser annealing can comprise the laser relative with described interface location according to raster excitation, with with laser radiation on the covering metal of described interface location, can de-energisation relative with other interface location laser is annealed in described other position avoiding.
In according to some embodiments of the present invention, described metal can be nickel, platinum or titanium.In according to some embodiments of the present invention, laser annealing can be included on the described interface location with the energy of the silicide of enough formation metals and SiC substrate and the laser of wavelength shines.
In according to some embodiments of the present invention, described SiC substrate can be 6H SiC, wherein laser annealing can comprise pulse with about 30 nanoseconds of duration, with about 2.8 joules/cm
2About 248 nanometers of energy, wavelength to the irradiating laser of about 308 nanometers.In according to some embodiments of the present invention, described SiC substrate can be 4H SiC, wherein laser annealing can comprise with each pulse have five pulses of about 30 duration nanosecond, with about 4.2 joules/cm
2About 248 nanometers of energy, wavelength to the irradiating laser of about 308 nanometers.In according to some embodiments of the present invention, described laser can be the above photon energy of band gap of described SiC substrate.In according to some embodiments of the present invention, described laser can be pulse modulation laser or continuous wave laser.
In according to some embodiments of the present invention, the contact that is used for light-emitting device can comprise according to pattern and forms metal so that the described layer of part exposes on carborundum (SiC) layer.Laser can be irradiated onto on the exposure position of SiC layer on the interface location with SiC layer and metal, therefore to form the metal-SiC material corresponding to described pattern.In according to some embodiments of the present invention, described layer can be the SiC substrate.
In according to some embodiments of the present invention, metal can be nickel, platinum or titanium.In according to some embodiments of the present invention, described laser annealing can be included on the described interface location with the energy of the silicide of enough formation metals and SiC substrate and the laser of wavelength shines.
In according to some embodiments of the present invention, described SiC substrate can be 6H SiC, and wherein laser annealing can comprise that use is with the pulse of about 30 nanoseconds of duration, with about 2.8 joules/cm
2About 248 nanometers of energy, wavelength to the irradiating laser of about 308 nanometers.
In according to some embodiments of the present invention, described SiC substrate can be 4H SiC, wherein laser annealing can comprise with each pulse have five pulses of about 30 duration nanosecond, with about 4.2 joules/cm
2About 248 nanometers of energy, wavelength to the irradiating laser of about 308 nanometers.
In according to some embodiments of the present invention, described laser can be the above photon energy of band gap of described SiC substrate.In according to some embodiments of the present invention, described laser can be pulse modulation laser or continuous wave laser.
In according to some embodiments of the present invention, the method that is formed for the ohmic contact of semiconductor device can comprise according to pattern and forms photoresist with first that exposes the SiC layer and the second portion that covers described substrate on the SiC layer.Covering metal can be formed on described first and the photoresist.Laser can be radiated at described first corresponding SiC layer and cover on the interface location of metal, therefore forming the metal-silicon carbide material, and can avoid covering irradiating laser on the metal accordingly with described second portion.
In according to some embodiments of the present invention, described method further comprises and removes metal to keep the metal-silicon carbide material from photoresist. cap rock can be formed on metal-SiC material, can remove photoresist from described SiC substrate.In according to some embodiments of the present invention, described method may further include on metal-SiC material and photoresist and forms cap rock, and removes photoresist from described SiC layer.
In according to another embodiment of the present invention, described method further comprises metal and the photoresist of peeling off on it, stays the metal-silicon carbide material. can on metal-SiC material, form cap rock.In according to some embodiments of the present invention, described metal can be nickel, platinum or titanium.In according to some embodiments of the present invention, energy and wavelength that described laser annealing can be included on the described interface location with the silicide of enough formation metals and SiC substrate carry out laser radiation.
In according to some embodiments of the present invention, form contact and can be included on the interface location between metal and the silicon carbide layer irradiating laser to form metal-SiC material, and then at least one ohmic contact is provided on the device that comprises relative ohmic contact border, described ohmic contact border has the non-ohmic contact zone therebetween.
In according to some embodiments of the present invention, light-emitting device (LED) can comprise that at least one is positioned at metal-silicon carbide (SiC) ohmic contact on the SiC layer, and described at least one metal-SiC ohmic contact comprises the relative ohmic contact border that has the non-ohmic contact zone therebetween.
In according to some embodiments of the present invention, the ohmic contact border can separate with about 10 μ m relatively. in according to some embodiments of the present invention, described at least one ohmic contact can comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition form band in the bar paten at oblique angle with the side of device.
In according to some embodiments of the present invention, described band can separate with 106 μ m. in according to some embodiments of the present invention, described at least one ohmic contact can comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition with the band of the bar paten of described device parallel sided.
In according to some embodiments of the present invention, described bar paten has defined the circular shape of the about 95 μ m of diameter, and wherein band can separate to the distance of about 5.0 μ m with about 4.0 μ m.In according to some embodiments of the present invention, described at least one ohmic contact can comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition the ring of concentric ring pattern.In according to some embodiments of the present invention, described ring separates to the distance of about 5.0 μ m with about 4.0 μ m.
In according to some embodiments of the present invention, the method that is formed for the ohmic contact of semiconductor device can be included in and form metal on carborundum (SiC) layer and described metal and SiC layer are carried out laser annealing with the interface location formation metal-SiC material at described metal and SiC layer.Can remove part metals-SiC material exposing the SiC layer according to pattern, and then at least one ohmic contact is provided on semiconductor device.
Embodiment
Describe the present invention hereinafter more all sidedly referring now to accompanying drawing, in described accompanying drawing, embodiments of the invention have been shown.Yet, should not be considered as among the embodiment that the present invention is limited in setting forth herein.On the contrary, provide these embodiment will make the disclosure, scope of the present invention is fully informed those skilled in the art more fully with complete.In the accompanying drawings, for clarity, exaggerated the thickness in layer and zone.In the text, identical reference numbers designate similar elements.Herein the term of Shi Yonging " and/or " comprise one or more relevant any and all combinations of listing in the item.
Its purpose of the term of Shi Yonging only is in order to describe special embodiment herein, rather than will limit the invention.Singulative as used herein " one ", " one " and " this " also comprise plural form, unless clear in addition in the text indicating. it is to be further understood that, when in specification, using term " to comprise " and/or when " comprising ", stipulated the existence of the feature of being stated, integral body, step, operation, element and/or parts, do not existed or additional one or more other more features, integral body, step, operation, element, parts and/or its combination but do not get rid of.
Should be understood that, be positioned at or when extending on another element, these elements can be located immediately at or directly extend on another element, perhaps also intermediary element can occur when the element such as layer, zone or substrate is known as.On the contrary, when element is called as on " being located immediately at " or " directly extending to " another element, then there is not intermediary element.It is to be further understood that when element is known as " connection " or " coupling " to another element this element can directly connect or be coupled to another element or can have intermediary element.On the contrary, when element is known as " directly connection " or " directly coupling " to another element, then there is not intermediary element.In entire description, same numeral refers to similar elements.
Should be understood that although may use first, second grade of term to describe various elements, parts, zone, layer and/or part, these elements, parts, zone, layer and/or part should not limited by these terms herein.These terms only are used for an element, parts, zone, layer or part and another element, parts, zone, layer or part are distinguished.Therefore first element of discussing below, parts, zone, layer or part also can be described as second element, parts, zone, layer or part, and do not depart from instruction content of the present invention.
In addition, perhaps used relative terms herein, such as D score or " end " with " on " or " top " element shown in the accompanying drawing and the relation of another element are described. should be understood that relative terms is the various different directions that comprise the device the direction of describing in figure.For example, if device is inverted among the figure, be described to be positioned at other element so " under " element of side will be positioned at other element " on " side.According to the concrete direction among the figure, so the exemplary term D score has comprised under " on " and " " both direction.Equally, if the device in a figure is inverted, be described to so to be positioned at other element D score and " bottom " and element will be positioned at other element it " on ".Therefore, exemplary term D score and " bottom " can comprise both direction up and down.
To describe embodiments of the invention with reference to cross sectional view (and/or plane graph) herein, described cross sectional view (and/or plan view) is the schematic diagram of desirable embodiment of the present invention.Like this, can predict shape shown because for example therefore manufacturing technology and/or tolerance exist various modification.Therefore, can not think the specific region shape that embodiments of the invention are limited in illustrating herein, but comprise for example owing to making the form variations that produces.For example, the etch areas that illustrates or be described to rectangle typically will have circle or arc feature.Therefore, the zone shown in the accompanying drawing is that schematically their shape is not the accurate shape that the device zone will be shown, and neither limit the scope of the invention in essence.
Unless stipulate in addition, all terms of Shi Yonging (comprising technical term and scientific terminology) have same meaning with those skilled in the art's of the present invention common sense herein.It is to be further understood that, such as those terms that in normally used dictionary, defines, should be understood to have the meaning consistent with the meaning of its correlation technique scope, and not should be understood to idealize or very formal meaning, unless clear herein definition like this. those skilled in the art it is to be further understood that being arranged in another feature contiguous feature or structure has and adjacent feature crossover or the part under adjacent feature.
The term of Shi Yonging " ohmic contact " is meant such contact herein, basic on the frequency of operation of all expectations, relative impedance is provided (promptly by the relation of impedance=V/I basically, on all working frequency, the impedance that ohmic contact is relevant is substantially the same), here V is the voltage in this contact, and I is an electric current.For example, in according to some embodiments of the present invention, ohmic contact can be that concrete contact resistivity is less than about 10e-3 ohm-cm
2Contact, in further embodiments, less than about 10e-4 ohm-cm
2Therefore, rectification contacts or has high specific contact resistivity (for example greater than about 10e-3 ohm-cm
2Specific contact resistivity) contact is not the term ohmic contact of herein using." metal-SiC material " of Shi Yonging comprises that such mixture, described mixture comprise when annealing metal and carborundum fuses together or fusing each other herein.For example it is to be further understood that the Ni-SiC material can be the mixture (perhaps alloy) of nickel and carbofrax material when annealing for the silicide that forms Ni.
As what describe in detail more herein, can provide a kind of method that the interface location of metal and silicon carbide substrates is annealed to form the metal-silicon carbide material herein according to embodiments of the invention, and avoid other position annealing on the silicon carbide substrates, and then avoid forming the metal-silicon carbide material. should be understood that the interface location that forms the metal-silicon carbide material can comprise perimeter (laser radiation metal and substrate herein) or near the border it.For example, as describe in further detail with reference to figure 21 herein, when laser radiation is on the interface, formed metal-SiC ohmic contact, described metal-SiC ohmic contact comprises the relative ohmic contact border and the non-ohm zone of (being the place of laser direct irradiation) therebetween herein, and has formed metal-SiC material at interface location.
For example use laser beam to anneal a position, avoid the another location on the annealing silicon carbide substrate simultaneously, can avoid since conventional short annealing for such destruction that epitaxial loayer caused. for example, in according to some embodiments of the present invention, be formed on the front side of substrate at epitaxial loayer after, can by use laser to the interface location on the substrate annealing avoid simultaneously to other position on the substrate anneal (by sheltering or laser being modulated) form the metal-silicon carbide ohmic contact.
Fig. 1-4 shows the sectional view that forms the metal-silicon carbide ohmic contact according to some embodiments of the present invention in light-emitting device.Especially, one or more epitaxial loayers 100 on the front side of SiC substrate 105, have been formed.Epitaxial loayer 100 can provide the active region of a light-emitting device, and can be made of the GaN sill, such as InGaN, GaAlInN etc. and metal level 110 is formed on the dorsal part of the SiC substrate 105 relative with epitaxial loayer 100.Should be understood that SiC substrate 105 can be the SiC material that is used to form any kind of light-emitting device, such as 4H or 6H SiC.It is to be further understood that metal level 110 can form the thickness of about 400 dusts to about 1100 dusts.Metal level 110 can be such as platinum, titanium or be preferably the metal of nickel.
As shown in Figure 2, the opening 220 that passes on the mask 215 of laser 225 is radiated on the respective interface position of metal level 110 and SiC substrate 105.Stopped that by mask 215 some laser 225 expose to other interface location of SiC substrate 105 and metal level 110.
As shown in Figure 3, interface location 330 is annealed therefore to form metal-SiC material, at described interface location place laser 225 irradiation metal level 110 and SiC substrates 105.In according to some embodiments of the present invention, thereby form the silicide that metal-SiC material is made metal at interface location by laser 225 heating of metal and SiC.On the contrary, the metal level 110 that is stopped by mask 215 and other interface location of SiC substrate 105 are not annealed, and therefore do not form metal-SiC material.
According to Fig. 4, for example under the situation of nickel metal layer, use HNO
3: 3H
2O or HCL and H
2The solution of O removes not the part of the metal level 110 of being annealed by laser 225.The unannealed part that removes metal level 110 has exposed the metal-SiC ohmic contact 435a-435d that has annealed.As mentioned above, in according to some embodiments of the present invention, by the interface location of metal level 110 and SiC substrate 105 is annealed, the metal-SiC ohmic contact by stopping that laser radiation to the relevant position of substrate is avoided the annealing of other position on the substrate 105 to form having annealed simultaneously.
Fig. 5-7 shows the sectional view that forms metal-silicon carbide ohmic contact method according to some embodiments of the present invention.As shown in Figure 5, laser 525 is radiated on the metal level 110 according to predetermined pattern.That is, some interface locations of metal level 110 and following substrate 105 are shone by laser 525, and other position is not shone by laser 525.In according to some embodiments of the present invention, by mobile laser beam on metal level 110 and according to desired pattern excitation/de-energisation laser to produce laser 525, laser 525 is radiated on metal level 110/ substrate 105.Should be understood that, can encourage or the de-energisation laser beam, local forming metal-SiC material, and avoid forming metal-SiC material in other place needed by the laser ON/OFF or by modulating lasering beam.
About top described " moving " laser beam, should be understood that, in according to some embodiments of the present invention, laser beam can move with discontinuous step according to pattern, and in according to other embodiments of the invention, according to the mobile continuously laser beam of pattern and with suitable interval excitation and de-energisation.It is to be further understood that laser beam can come reflection lasering beam and " moving " laser beam by the speculum on the moving metal layer 110 for example.The scheme that can substitute is to move the laser that produces laser beam on metal level.
In according to other embodiments of the invention, can be under the laser beam of " fixing " mobile substrate.For example, substrate can move with the increment of mask spacing, and stops in each position that several pulses (perhaps continuing pulse) laser beam is energized.In according to some embodiments of the present invention, 1.8mm * 1.8mm field is used for 6 * 6 array pitch tube cores of 300 μ m. the scheme that can substitute is, can be along an axle continuous mobile substrate under fixed beam, at each pipe core space synchronization motivationtheory laser beam, and this point can change along with device. be sent to each position pulse number can based on substrate in the mask move along the number of the die site of axle.Just can retrieve wafer by mask spacing then, so just can multiple scanning along non-scan axis. Figure 28 shows can be by the typical laser-mask of its projecting laser so that metal-SiC ohmic contact is annealed according to some embodiments of the present invention.
As shown in Figure 6, the interface location of metal level 110 that is shone by laser 525 and substrate 105 is annealed therefore to form metal-SiC material 630.Should be understood that, still do not kept unannealed by laser 525 irradiations other interface location 631 thereon. according to Fig. 7, for example use above-mentioned etching solution to remove the unannealed part of metal level 110 with reference to figure 4, with expose annealing metal-SiC ohmic contact 735a-d. therefore, in according to some embodiments of the present invention, by according to pattern metal level and below the interface location place irradiating laser of SiC substrate form annealed metal-SiC ohmic contact.By avoiding the appropriate section of laser radiation, can prevent the annealing of other interface location of metal level and SiC substrate at metal level and substrate.
Fig. 8-11 shows the sectional view that forms the method for metal-silicon carbide ohmic contact according to some embodiments of the present invention in light-emitting device.In Fig. 8, metal level 110 is formed on the SiC substrate 105 relative with epitaxial loayer 100.Metal level 110 use for example peel off or etching processing patterned, its part is removed so that part metals layer 940a-940d still is retained on the substrate 105, described metal level part 940a-940 has the substrate part of exposure therebetween, as shown in Figure 9.Therefore, the remainder 940a-d of metal level 110 comprises the interface location with following SiC substrate 105.
As shown in Figure 10, the laser 1025 remainder 940a-d that is irradiated onto metal level 110 go up and the exposure position of SiC substrate 105 therebetween on.The remainder 940a-940d of 1025 pairs of metal levels 110 of laser anneals to form the metal-SiC ohmic contact 1135a-1135d that has annealed on substrate according to above-mentioned pattern with reference to figure 9.Therefore, in according to some embodiments of the present invention, by forming the residual metallic part from metal level according to pattern, metal-SiC ohmic contact is annealed, laser radiation on residual metallic part and the SiC substrate that exposes to avoid removing the position formation metal-SiC material the corresponding residual metallic part.
One skilled in the art will appreciate that the superiority of hypothesis the disclosure, preferably laser 1025 does not damage the border of the metal-SiC ohmic contact 1135a-1135d of above-mentioned formation.Especially, if not addressing, the laser 105 that is radiated at so on SiC substrate 105 expose portions may damage adjacent metal-SiC ohmic contact 1135a-1135d.As described in reference Figure 24, ohmic contact can comprise near the interface edge of the metal that is arranged in laser radiation and SiC substrate or outside relative metal-SiC ohmic contact border. according to some embodiments of the present invention, can avoid the elimination of metal-SiC ohmic contact by the power that for example reduces the laser 1025 adjacent with metal-SiC ohmic contact. in according to some embodiments of the present invention, can change optical maser wavelength to avoid the elimination of adjacent metal-carborundum ohmic contact.
Figure 12-17 shows other embodiment according to the present invention and forms the sectional view of the method for annealing silicon carbide ohmic contact.Form 1245 layers in photoresist pattern according to pattern on SiC substrate 105, so that the part of substrate 105 keeps being covered by photoresist 1245, and the other parts of SiC substrate 105 are exposed.According to Figure 13, metal level 1350 be formed on the photoresist pattern 1245 that separates with following SiC substrate 105 and the expose portion of substrate 105 on the interface location of definition metal 1350 and SiC substrate 105.
As shown in figure 14, laser 1425 is irradiated onto on the interface location 1460 on the expose portion that is positioned at SiC substrate 105.The metal 1350 that 1425 pairs of laser are positioned on the expose portion of SiC substrate 105 at interface location 1460 places is annealed, so that form metal-SiC material 1535a-d shown in Figure 15 at this place.In according to some embodiments of the present invention, laser 1425 also can be radiated on the metal level 1350 on the photoresist pattern 1425, yet metal level 1350 and photoresist pattern 1245 may be destroyed by laser 1425.
According to Figure 16, on the metal on photoresist pattern 1245 and metal-SiC (SiC) material 1535a-1535d, form cap rock 1665.Photoresist pattern 1245 and the metal 1350 (appropriate section that comprises cap rock 1665) on it can use lift-off processing to remove, and for example comprise that etching photoresist pattern is to remove photoresist, metal and the cap rock on it as shown in figure 17.
Should be understood that, in according to some embodiments of the present invention, above-mentionedly can after forming cap rock pattern 1665 shown in Figure 16, shine with reference to the described laser 1425 of Figure 14.In addition, can remove cap rock 1665 and the metal 1350 that is positioned on the photoresist pattern 1245 in the step separately, rather than above-mentioned with reference to removing together described in Figure 16.
Figure 18-20 shows according to the present invention other embodiment form the metal-silicon carbide ohmic contact in light-emitting device sectional view.According to Figure 18 and 19, laser 2525 is radiated on the metal 2510/SiC substrate 2505 in a covered manner, to form the metal-SiC layer 2660 of having annealed.Remove the metal-SiC layer 2660 of partly having annealed so that the remainder of the metal-SiC layer 2660 of annealing forms metal-SiC ohmic contact as shown in figure 20.Should be understood that, removing of part metals layer can use the technology of well known to a person skilled in the art to carry out, for example reactive ion etching and photoengraving. therefore, can use capping annealing (blanket anneal) to form according to some embodiments of the invention metal-SiC ohmic contact by laser, and can avoid annealing by remove part metals according to pattern.
Figure 21-22 shows the sectional view of the light-emitting device that comprises the metal-silicon carbide ohmic contact that forms according to the embodiment of the invention.Especially, Figure 21 shows the metal-SiC ohmic contact 1835 that is positioned at the annealing on the bevel edge SiC substrate 1805 relative with the lamination of n/p type epitaxial loayer 1800.The thickness of substrate 1805 reduces to make that allowing one when wafer cuts saws point, to eliminate the top of substrate 1805.For example, in U.S. Patent No. 5,087, described the formation of this bevel edge device in 949, its disclosed all the elements are included in this as a reference.
Figure 22 shows vertical cut (straight cut) light-emitting device that comprises the annealed metal-SiC ohmic contact that forms according to the embodiment of the invention.The metal of having annealed especially ,-SiC ohmic contact 1935 is positioned on the substrate 1905 relative with the lamination of n/p type extension cambium layer 1900.Structure shown in Figure 21 can produce high light output and high light is extracted.In addition, the structure of Figure 21 can help more conformal phosphor coating to improve the white light conversion efficiency that reduces to cause owing to thickness.
Figure 23 shows the floor map of the above-mentioned wafer 2080 that is annealed with reference to figure 1-20.Especially, according to some embodiments of the present invention, pattern line 2081 representatives are used for the laser pattern to the metal on it-the SiC ohmic contact is annealed.As mentioned above, light can be radiated on the metal level of wafer 2080 according to pattern line 2081.The scheme that can substitute is that pattern line 2081 can encourage with de-energisation laser according to pattern and produce, and perhaps is radiated on the substrate by the opening in the mask.In addition, light can shine on the substrate that has photoresist pattern and metal thereon.
Figure 24 shows the detailed view according to some embodiments of the present invention metal-silicon carbide ohmic contact.Especially, metal-SiC ohmic contact 2100 comprises the relative metal-SiC ohmic contact border 2101,2102 that has non-ohmic contact zone 2103 therebetween.As what the inventor understood, when laser radiation the SiC substrate and below during the interface location of metal level, form metal-SiC material in edge near the laser radiation interface location.For example, as shown in figure 24, ohmic contact border 2101 and 2102 has defined a perimeter, and laser has been radiated at the interface location of the metal level in the SiC substrate herein.
Therefore, in according to some embodiments of the present invention, ohmic contact border 2101 and 2102 has defined an annealed metal-SiC ohmic contact, and this is between the relative ohmic contact border 2101,2102 and has comprised non-ohmic contact zone 2103.Should be understood that non-ohmic contact zone 2103 is also by laser radiation, described laser is annealed to form metal-SiC at relative 2101,2102 places, ohmic contact border to interface location.It is to be further understood that, the shape on ohmic contact border 2101,2102 can change along with employed laser characteristics relatively. for example, can defocus laser so that uneven profile shown in Figure 24 to be provided, yet perhaps laser focusing with provide with profile phase shown in Figure 24 than the relative narrow and profile relatively uniformly of width., should be understood that, inhomogeneous profile shown in Figure 24 is example character in essence, and shape shown in being not limited to.
In some other embodiment according to the present invention, some edges in laser-mask can comprise the feature of measurement less than lens (being used for guided laser) resolution (for example, approximately 2um), and the edge that described feature once was called as mask " softens ".Especially, the softening of edge can be so that laser energy reduces step by step towards the edge of image that mask produced.Reducing near the energy in edge can increase the density of the edge feature that laser produced that throws by mask.The example mask feature has been shown among Figure 29 A.Figure 29 B shows the detailed view of the part at mask edge shown in according to some embodiments of the invention Figure 29 A.
Figure 25 shows and installs the simplified plan view that 2270 side forms a plurality of metals-SiC ohmic contact 2200 at oblique angle.Should be understood that each band that is included in a plurality of metals-SiC ohmic contact 2200 comprises relative metal-SiC ohmic contact border and non-ohmic contact zone therebetween, for example as shown in figure 24.
Figure 26 shows the simplification floor map of a plurality of metal-silicon carbide ohmic contact of definition striped circular pattern 2300, and wherein striped is parallel to the side of device 2370.Should be understood that each band in the pattern 2300 comprises each relative metal-SiC ohmic contact border and non-ohmic contact zone therebetween, for example as shown in figure 24.
Figure 27 shows the simplification floor map of the pattern of the metal-SiC ohmic contact that defines circular shape concentric annular patterns 2400.Should be understood that each ring in the pattern 2400 comprises the metal-SiC on relative ohmic contact border and non-ohmic contact zone therebetween, for example as shown in figure 24.
Should be understood that in according to some embodiments of the present invention, can form and be included in above-mentionedly with reference to band or ring in the described metal of figure 23-27-SiC ohmic contact, described band or ring have different thickness and its interbody spacer.For example, in according to some embodiments of the present invention, band in metal-SiC ohmic contact can have about 10 microns width and its about 100 or 106 microns interbody spacer. in according to other embodiments of the invention, interval between the band can be about 4 to 5 microns, these bands are to have the basic circular patterned arrangement of about 95 micron diameters herein, for example as shown in figure 26, perhaps as shown in figure 27 concentric ring.Although it is to be further understood that bar paten illustrates respectively shown in Figure 25-27, these bar patens can be in conjunction with to form metal described herein-SiC ohmic contact.
Should be understood that described herein being used for the laser that metal-the SiC ohmic contact is annealed can be to have to be enough at the wavelength that forms the metal-silicon carbide material at the interface of metal level and SiC substrate and the laser of intensity.For example, in using the embodiment of 6H SiC as substrate, laser annealing can by with the pulses of about 30 nanoseconds of duration, with every square centimeter of about energy of 2.8 joules, have about 248 nanometers to the laser of about 308 nano wave lengths and shine and finish.Some other according to embodiments of the invention in, for example, in using the embodiment of 4H SiC as the SiC substrate, described laser can have about 248 nanometers and have every square centimeter of about energy of 4.2 joules when each pulse has about 5 pulses of about 30 nanoseconds of duration to about 308 nano wave lengths, applying.Some other according to embodiments of the invention in, the absorption of the light by comprising photon energy (this photon energy is positioned on the band gap of SiC substrate), can use other wavelength and energy so that the interface location of metal level and SiC substrate is annealed. should be understood that, also can use pulse and/or continuous loop laser.
It is to be further understood that electron beam annealing can be as the substitute of laser annealing. therefore, in above-mentioned each embodiment, electron beam can be used for the interface location of metal level and SiC substrate is annealed therefore to form metal-SiC material.Should be understood that metal-SiC ohmic contact can be the contact that is used for any SiC device, and can be included on the SiC epitaxial loayer.
Under the situation of given disclosure rights and interests, and without departing from the spirit and scope of the present invention situation under, those of ordinary skills can also make many substituting and modification.Therefore, should be understood that, illustrate the embodiment that illustrates herein and only be the purpose for example, and should not be regarded as and limited the present invention, the present invention's claim of only having the right limits.The combination of these elements that the claims therefore should be understood that to comprise that not only literal is set forth, and comprise that be useful on carries out basic identical function to obtain basic identical result's equivalence element in essentially identical mode.Therefore, that specifically illustrate and describe and the notion equivalence and those statements that comprise basic concept of the present invention above claim should be understood to comprise.
Claims (54)
1. method that is formed for the ohmic contact of semiconductor device comprises:
On carborundum (SiC) layer, form and cover metal; With
First interface location to SiC layer and covering metal is annealed with the energy level on the SiC layer band gap, to form metal-SiC material, thereby ohmic contact is provided, and avoids annealing to avoid so to form metal-SiC material in the second contact surface position of SiC layer and covering metal.
2. method according to claim 1, wherein silicon carbide layer comprises the SiC substrate.
3. method according to claim 2, wherein said annealing comprises:
Anneal at described first interface location; With
Anneal according to pattern and to anneal in described second contact surface position avoiding.
4. method according to claim 2, wherein annealing comprises:
Pass opening in the mask layer with laser radiation to the covering metal at the described first interface location place, and use mask layer to stop that the laser radiation relative with the second contact surface position covering on the metal, anneal in the second contact surface position avoiding.
5. method according to claim 1, wherein said annealing comprises:
Encourage the laser relative with described first interface location with laser radiation on the covering metal at described interface location place; With
The de-energisation laser relative with described second contact surface position annealed in described second contact surface position avoiding.
6. method according to claim 2, wherein said second contact surface position and described SiC substrate separate.
7. method according to claim 2, wherein the described metal-SiC material at the described first interface location place comprises the metal ohmic contact that is positioned on the described substrate dorsal part, described substrate dorsal part with its on to have a substrate front side of epitaxial loayer relative.
8. method according to claim 1, wherein annealing comprises:
Irradiating laser is to form the ohmic contact that at least one comprises relative ohmic contact border on described first interface location, and described relative ohmic contact border has the non-ohmic contact zone therebetween.
9. method according to claim 8, wherein said at least one ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition form the bar paten at oblique angle with the side of device.
10. method according to claim 6, wherein said ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition with the bar paten of described device parallel sided.
11. method according to claim 6, wherein said ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition circular pattern.
12. method according to claim 2, wherein annealing comprises:
Irradiating electron beam on described first interface location, and stop that described electron beam is radiated at described second contact surface position.
13. a method that is formed for the ohmic contact of semiconductor device comprises:
On carborundum (SiC) layer, form and cover metal; With
With the energy level on the SiC layer band gap SiC layer and the interface location that covers metal are carried out laser annealing according to pattern, thereby provide ohmic contact to form metal-SiC material corresponding to described pattern.
14. method according to claim 13, wherein the SiC layer comprises the SiC substrate.
15. method according to claim 14, wherein laser annealing comprises:
Pass opening in the mask with laser radiation to the described interface location, therefore to form metal-SiC material, described mask has defined described pattern; With
Use mask to stop and SiC substrate and the relative laser of other interface location that covers metal.
16. method according to claim 13, wherein laser annealing comprises:
Therefore the laser relative with described interface location according to raster excitation to cover laser radiation on the metal level; With
The laser that de-energisation is relative with other interface location is annealed thereon avoiding.
17. method according to claim 13, wherein said covering metal comprises: nickel, platinum or titanium.
18. method according to claim 14, wherein laser annealing is included on the interface location so that enough the energy of the silicide of formation SiC substrate and metal and the laser of wavelength shine.
19. method according to claim 18, wherein said SiC substrate comprises 6H SiC, wherein laser annealing comprise pulse with 30 nanoseconds of duration, with 2.8 joules/cm
2Energy, the laser with 248 nanometer to 308 nano wave lengths shine.
20. method according to claim 18, wherein said SiC substrate comprises 4H SiC, wherein laser annealing comprise with each pulse have five pulses of 30 nanoseconds of duration, with 4.2 joules/cm
2Energy, the laser with 248 nanometer to 308 nano wave lengths shine.
21. method according to claim 18, wherein said laser comprises the photon energy on the band gap that is positioned at the SiC substrate.
22. method according to claim 18, wherein said laser comprises pulse modulation or continuous wave laser.
23. a method that is formed for the ohmic contact of semiconductor device comprises:
On the SiC layer, form photoresist with first that exposes the SiC layer and the second portion that covers described substrate according to pattern;
On first and photoresist, form and cover metal;
Corresponding to the SiC layer of described first with cover on the interface location of metal with the energy level irradiating laser on the SiC layer band gap, therefore to form metal-SiC material, thereby ohmic contact is provided, and avoids laser radiation corresponding to the covering metal of second portion and then avoid so form metal-SiC material.
24. method according to claim 23, wherein said SiC layer comprises the SiC substrate
25. method according to claim 23 further comprises:
From photoresist, remove metal to keep metal-SiC material;
On metal-SiC material, form cap rock; With
From the SiC substrate, remove photoresist.
26. method according to claim 23 further comprises:
On metal-SiC material and photoresist, form cap rock; With
From described SiC layer, remove photoresist.
27. method according to claim 23 further comprises:
Peel off metal and photoresist on the described SiC layer, stay metal-SiC material; With
On metal-SiC material, form cap rock.
28. method according to claim 23, wherein said metal comprises nickel, platinum or titanium.
29. method according to claim 23, wherein laser annealing is included on the interface location so that enough the energy of the silicide of formation SiC layer and metal and the laser of wavelength shine.
30. method according to claim 24, wherein said SiC substrate comprises 6H SiC, wherein laser annealing comprise pulse with 30 nanoseconds of duration, with 2.8 joules/cm
2Energy, the laser with 248 nanometer to 308 nano wave lengths shine.
31. method according to claim 24, wherein said SiC substrate comprises 4H SiC, wherein laser annealing comprise with each pulse have five pulses of 30 nanoseconds of duration, with 4.2 joules/cm
2Energy, the laser with 248 nanometer to 308 nano wave lengths shine.
32. method according to claim 24, wherein said laser comprises the photon energy on the band gap that is positioned at the SiC substrate.
33. method according to claim 23, wherein said laser comprises pulse modulation or continuous wave laser.
34. a method that is formed for the contact of light-emitting device (LED) comprises:
On the interface location between metal and carborundum (SiC) layer with the energy level irradiating laser on the SiC layer band gap to form metal-SiC material, and then the ohmic contact that on LED, provides at least one to comprise relative ohmic contact border, between described ohmic contact border, have the non-ohmic contact zone.
35. method according to claim 34, wherein said SiC layer comprises the SiC substrate.
36. method according to claim 34, wherein said at least one ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition form the bar paten at oblique angle with the side of device.
37. method according to claim 34, wherein said at least one ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition with the bar paten of described device parallel sided.
38. method according to claim 34, wherein said at least one ohmic contact comprise a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition circular pattern.
39. method according to claim 35, wherein said SiC substrate comprises 6H SiC, and wherein laser comprises 248 nanometer to 308 nano wave lengths, 2.8 joules/cm
2Energy, have the pulses of 30 nanoseconds of duration.
40. method according to claim 35, wherein said SiC substrate comprises 4H SiC, and wherein laser comprises 248 nanometer to 308 nano wave lengths, 4.2 joules/cm
2Energy, each pulse have five pulses of 30 nanoseconds of duration.
41. method according to claim 35, wherein said laser comprises the photon energy on the band gap that is positioned at the SiC substrate.
42. method according to claim 34, wherein said laser comprises pulse modulation or continuous wave laser.
43. a method that is formed for the ohmic contact of semiconductor device comprises:
On carborundum (SiC) layer, form metal;
Metal and SiC layer are carried out laser annealing with the energy level on the SiC layer band gap form metal-SiC material with interface location at SiC layer and metal, thus provide ohmic contact and
Remove part metals-SiC material exposing the SiC layer according to pattern, and then at least one ohmic contact is provided on semiconductor device.
44. according to the described method of claim 43, wherein said SiC layer comprises the SiC substrate.
45. the contact in the semiconductor device comprises:
At least one is positioned at metal-silicon carbide (SiC) ohmic contact on the SiC layer, and described at least one metal-SiC ohmic contact comprises the relative ohmic contact border that has the non-ohmic contact zone therebetween.
46. according to the described contact of claim 45, wherein said SiC layer comprises the SiC substrate.
47. according to the described contact of claim 45, wherein said relative ohmic contact border separates with 10 μ m.
48. according to the described contact of claim 45, wherein said at least one ohmic contact comprises a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition form band in the bar paten at oblique angle with the side of device.
49. according to the described contact of claim 48, wherein band separates with 106 μ m.
50. according to the described contact of claim 45, wherein said at least one ohmic contact comprises a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition with the bar paten of described device parallel sided in band.
51. according to the described contact of claim 48, wherein said bar paten has defined has the round-shaped of 95 μ m diameters, wherein band separates with the distance of 4.0 μ m to 5.0 μ m.
52. according to the described contact of claim 45, wherein said at least one ohmic contact comprises a plurality of ohmic contact that comprise each relative ohmic contact border, described ohmic contact boundary definition the ring of circular concentric pattern.
53. according to the described contact of claim 52, wherein said ring separates with the distance of 4.0 μ m to 5.0 μ m.
54. according to the described contact of claim 45, wherein said device comprises Light-Emitting Diode.
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| US49518903P | 2003-08-14 | 2003-08-14 | |
| US60/495,189 | 2003-08-14 | ||
| US60/495,284 | 2003-08-15 | ||
| US10/916,113 | 2004-08-11 |
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| CN101908591A (en) * | 2010-06-23 | 2010-12-08 | 山东华光光电子有限公司 | Preparation method for ohmic contact electrode for LED with SiC substrate |
| JP5668414B2 (en) * | 2010-11-01 | 2015-02-12 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
| JP6164220B2 (en) | 2012-10-23 | 2017-07-19 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| CN104037279A (en) * | 2014-07-01 | 2014-09-10 | 厦门市三安光电科技有限公司 | Method for manufacturing light emitting diode (LED) with current blocking layer |
| CN106158728B (en) * | 2015-04-03 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole embolism |
| CN111081830A (en) * | 2019-12-21 | 2020-04-28 | 华南理工大学 | Method for annealing LED with embedded electrode structure |
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