CN100505283C - Method for manufacturing semiconductor image sensor IC - Google Patents
Method for manufacturing semiconductor image sensor IC Download PDFInfo
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- CN100505283C CN100505283C CNB2004100682295A CN200410068229A CN100505283C CN 100505283 C CN100505283 C CN 100505283C CN B2004100682295 A CNB2004100682295 A CN B2004100682295A CN 200410068229 A CN200410068229 A CN 200410068229A CN 100505283 C CN100505283 C CN 100505283C
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- image sensor
- semiconductor image
- hexamethyldisiloxane
- semiconductor
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005693 optoelectronics Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims 3
- 238000007664 blowing Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 abstract description 15
- 229910007161 Si(CH3)3 Inorganic materials 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 39
- 238000009792 diffusion process Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- DCERHCFNWRGHLK-UHFFFAOYSA-N C[Si](C)C Chemical compound C[Si](C)C DCERHCFNWRGHLK-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
An organosilicon compound hexamethyldisilazane (HMDS:(CH3)3Si-Si(CH3)3) is used for the dangling band reaction of the silicon atom, to chemically stabilize the dangling band of the silicon atom thereby restricting the generation of minority carrier.
Description
Technical field
The present invention relates generally to the mos semiconductor image sensor IC.More specifically, the present invention relates to the manufacture method of the linear image sensor IC of closing type semiconductor, the relative position of pixel and in image sensor IC with the separated drawn area of IC more approaching than in the area sensor, and be suitable for being used for the fasystem or the image reading apparatus of the image information that reading images information reads with transmission.
Background technology
Fig. 3 shows the profile of an example of conventional semiconductor image sensor IC (semiconductor device) structure.The linear image sensor IC of the semiconductor of this example adopts the photoelectric crystal tubular construction as opto-electronic conversion (light-receiving) element.With reference to figure 3, be formed in the part corresponding to the near surface of the N type semiconductor substrate 301 of the collector electrode part of phototransistor corresponding to the P type well region 302 of base stage part.And, be present in the part of P type well region 302 near surfaces corresponding to the N type diffusion region 303 of emitter part.Be biased to base potential and be formed on the polysilicon electrode 305 that is used to protect on the gate insulating film 304 and be present in around the N type diffusion region 303.Equally, form the dielectric film of boron-phosphorosilicate glass (BPSG) film 306 conducts between polysilicon electrode 305 and metal line 307 to cover polysilicon electrode 305.Light receiving element is electrically connected by metal line 307.At last, form silicon nitride film 308 and be used for surface protection as passivating film.
In addition, be used for the near surface that the N type diffusion region 310 of the current potential of fix N N-type semiconductor N substrate 301 stably is formed on drawn area 309, provide drawn area 309 so that substrate is cut off each other.Because etching and remove bpsg film 306 and silicon nitride film 308 so that minimizing is used to cut off the wearing and tearing and the breakage of the scribing blade of IC, so the surface of N type diffusion region 301 directly is exposed in the atmosphere.
In some conventional semiconductor image sensor ICs, N type diffusion region 310 is not formed in the drawn area 309, but etching the surface of N type semiconductor substrate 301 in the drawn area 309, damaged crystallinity wittingly so that prevent to produce minority carrier (for example, with reference to JP2002-134727 A (the 2nd and 3 page and Fig. 1).
Yet, in the semiconductor image sensor IC structure of routine, should carry out the electrical characteristics test with the form of wafer.Finishing the finished product of wafer form after the manufacturing process is closed in the nitrogen atmosphere under 20 ℃ the temperature that is equal to or less than solidifying point.Air transport finished product under this condition.When the atmosphere of opening wide sealing so that the electrical characteristics of measuring wafer are tested, because the very a spot of moisture that exists in the nitrogen atmosphere, the minority carrier that produced involuntary in the surface of wafer (unintentional), cause the output offset of opto-electronic conversion (light-receiving) element of a plurality of photodiodes that exist on semiconductor image sensor IC or phototransistor, this causes problem.
The output offset of photo-electric conversion element has following characteristics: the structure graph of adjacent semiconductor image sensor IC has influenced skew, has produced some similarly fixing output pattern.
In addition, the fixing output pattern that produces in the wafer form has following characteristics: when IC is separated from each other when being processed into chip, above-mentioned fixedly output pattern disappears.Produce following problem thus:, therefore be difficult to use simple conversion coefficient to set the standard value of wafer sort because the difference of the output of the opto-electronic conversion between wafer form and the IC chip form is always not invariable.Only can test accurately at the IC chip form.Yet the minor face of the size of wire-type semiconductor image sensor IC is little of 0.5mm or littler.In addition, the wire-type semiconductor image sensor IC directly is installed to sensor head, does not therefore need to exist encapsulation.Surveyed the limitation of accuracy, can not be carried out the electrical characteristics test with the IC chip form basically in existing technical merit.
Summary of the invention
In view of more than, make the present invention to solve the problems referred to above relevant with prior art, therefore an object of the present invention is to provide a kind of manufacture method of semiconductor image sensor IC, on the surface of wafer, can avoid by the moisture reason minority carrier of involuntary generation.
In order to obtain above purpose,, before the electrical characteristics test of wafer, add being coated in passivating film surface (silicon nitride film surface) and the drawn area surface that in atmosphere, is exposed to moisture in the semiconductor image sensor IC with organo-silicon compound according to the present invention.
Can recognize in order that the hydroxyl of the moisture in atmosphere (OH yl) has influenced in the silicon nitride film near surface or near the semiconductor substrate surface in the dangling bonds of the silicon atom that exists, cause and excessively produced above-mentioned unintentional minority carrier.Therefore, the dangling bonds that the stop silicon atom chemical reaction that is used for stablizing chemical energy has suppressed the generation of minority carrier thus.In an example of the present invention, be the hexamethyldisiloxane (HMDS:(CH of organo-silicon compound
3)
3Si-Si (CH
3)
3) be used for reacting with the dangling bonds of silicon atom.
Fig. 2 shows the isopropyl alcohol (CH that has hydroxyl (OH yl) when drippage (dropped)
3CH (CH
3) OH) replace moisture so that when the state that is easy to generate minority carrier is provided on wafer, wherein on wafer, be formed with by the linear image sensor IC of the semiconductor with 96 opto-electronic conversion (light-receiving) element of manufacturing process manufacturing of the present invention, the graph of relation between the output voltage (being plotted on the ordinate) of 96 photo-electric conversion elements (being plotted on the axis of abscissas) and each photo-electric conversion element.At drippage before the isopropyl alcohol initial condition and the drippage isopropyl alcohol after as the elapsed-time standards of parameter, the output voltage of drafting (Platted) 96 light receiving elements.In the drawings, the time of experience is followed successively by stain ●, black triangle and black rhombus ◆.Experimental result shows, suppressed the generation of minority carrier by use HMDS in manufacturing process of the present invention, thus the output of light receiving element be difficult to by isopropyl alcohol or-influence of OH base.
On the other hand, Fig. 4 shows the isopropyl alcohol (CH that has hydroxyl (OH yl) when drippage (dropped)
3CH (CH
3) OH) replace moisture so that when the state that is easy to generate minority carrier is provided on wafer, wherein on wafer, be formed with the linear image sensor IC of the semiconductor with 96 opto-electronic conversion (light-receiving) element, the graph of relation between the output voltage (being plotted on the ordinate) of 96 photo-electric conversion elements (being plotted on the axis of abscissas) and each photo-electric conversion element by the manufacturing process manufacturing of routine.At drippage before the isopropyl alcohol initial condition and the drippage isopropyl alcohol after as the elapsed-time standards of parameter, draw the output voltage of 96 light receiving elements.Experimental result shows because the influence of isopropyl alcohol (having-the OH yl) has produced a large amount of minority carriers, therefore drip before the isopropyl alcohol and the output of light receiving element afterwards great changes have taken place.
As mentioned above, according to the present invention, can prevent on the surface portion of wafer unintentional minority carrier that the influence owing to moisture produces, therefore can solve the problem of the skew that produces between the output of opto-electronic conversion (light-receiving) element of a plurality of photodiodes that exist in the semiconductor image sensor IC on wafer surface or phototransistor.Therefore, the opto-electronic conversion output between wafer form and IC chip form there are differences hardly, therefore can accurately measure the electrical characteristics of IC in wafer sort.
Description of drawings
In the accompanying drawings:
Figure 1A and 1B show the profile of the manufacturing process of semiconductor image sensor IC according to an embodiment of the invention;
It is after the drippage isopropyl alcohol of parameter that Fig. 2 shows the elapsed-time standards of comparing with the initial condition of dripping before the isopropyl alcohol, the curve representation of the time relationship of the output voltage of the light receiving element of the linear image sensor IC of making by manufacturing process of the present invention of semiconductor;
Fig. 3 shows the profile of an example of conventional semiconductor image sensor IC structure; And
It is after the drippage isopropyl alcohol of parameter that Fig. 4 shows the elapsed-time standards of comparing with the initial condition of dripping before the isopropyl alcohol, the curve representation of the time relationship of the output voltage of the light receiving element of the linear image sensor IC of making by the manufacturing process of routine of semiconductor.
Embodiment
At length introduce a preferred embodiment of the present invention below with reference to accompanying drawing.
Figure 1A and 1B show the profile of the manufacturing process of semiconductor image sensor IC according to an embodiment of the invention.Figure 1A shows the profile of the structure of employing phototransistor as the manufacturing process of the linear image sensor IC of semiconductor of opto-electronic conversion (light-receiving) element.The manufacturing process of passivating film that is used for surface protection up to composition is all identical with the manufacturing process of routine.With reference now to Figure 1A,, is formed in the part corresponding to the near surface of the N type semiconductor substrate 101 of the collector electrode part of phototransistor corresponding to the P type well region 102 of base stage part.Equally, be present in the part of near surface of P type well region 102 corresponding to the N type diffusion region 103 of emitter part.Be biased to base potential and be formed on the polysilicon electrode 105 that is used to protect on the gate insulating film 104 be present in N type diffusion region 103 around.Form the dielectric film of bpsg film 106 conducts between polysilicon electrode 105 and metal line 107 to cover polysilicon electrode 105.Light receiving element is electrically connected mutually by metal wire 107.At last, form silicon nitride film 108 as the passivating film that is used for surface protection.In addition, be used for the near surface that the N type diffusion region 110 of the current potential of fix N N-type semiconductor N substrate 101 stably is present in drawn area 109, form drawn area 109 so that IC is separated from one another.In the surface of N type diffusion region 110, etching and remove bpsg film 106 and silicon nitride film 108 so that reduce is used to cut off the wearing and tearing and the breakage of the scribing blade of IC.
Formation has after the linear image sensor IC of semiconductor of structure shown in Figure 1A, carry out following technology: in the environment under 25 ± 5 ℃ temperature nitrogen is incorporated in the chemical vessel of placing HMDS the gas 111 that contains the gas 111 of HMDS with generation and will contain HMDS and is injected in 30 to 60 seconds on the wafer surface, in wafer surface, prepared the linear image sensor IC of semiconductor and place it on the calandria under the temperature that remains on 100 ± 5 ℃ (with reference to Figure 1B).The reason that injection contains 11130 to 60 seconds of gas of HMDS is to be shorter than for 30 seconds if spray the time cycle of needs, the injection of gas 111 that contains HMDS so is with insufficient, surpassed for 60 seconds if spray the time cycle that needs, the HMDS of cushion is absorbed into wafer surface so.
This moment is when finishing the spray technology of the gas that contains HMDS, and is organic silica-based (trimethyl silicon based: (CH
3)
3Si～) and in the silicon nitride film near surface or near the semiconductor substrate surface in the dangling bonds of the silicon atom that exists carry out chemical reaction, obtain the stable state aspect chemical energy.In this way, the quantity of the dangling bonds of silicon atom reduces in a large number, can suppress thus by the chemical reaction between the dangling bonds of the hydroxyl of the moisture in the atmosphere and silicon atom and the minority carrier that produces.
HMDS is absorbed the method that wafer surface is not limited to above introduction.Usually, carry out the preliminary treatment of HMDS as the photoresist coating processes that adopts the resist-coating machine. therefore can use this resist-coating machine that HMDS is coated on the wafer surface.
Claims (5)
1. the manufacture method of a semiconductor image sensor IC, wherein adopted each light-emitting diode or each to have in the phototransistor of NPN knot in the near surface of the silicon semiconductor substrate of being provided at or positive-negative-positive one with PN junction, to accumulate minority carrier in the depletion layer that in each PN junction, produces, utilized opto-electronic conversion effect sense data thus, this method comprises:
Coating processes with the surface of organo-silicon compound coating semiconductor substrate, be used for the surface of passivated semiconductor substrate chemically so that be suppressed on the surface of the Semiconductor substrate except that the zone of photodiode or phototransistor and produce superfluous minority carrier, between the technology of the final technology of semiconductor manufacturing and testing wafer electrical characteristics, provide this coating processes.
2. according to the manufacture method of the semiconductor image sensor IC of claim 1, wherein the surface of the semiconductor image sensor IC that applies for passivated semiconductor image sensor IC surface chemically and with organo-silicon compound is to be used for the silicon nitride film surface of surface protection or the surface of silicon of the drawn area that forms for cut-out, to be used for the passivating film of surface protection and to be exposed to the surface of silicon of the drawn area of atmosphere as one of boron-phosphorosilicate glass (BPSG) film of the dielectric film of middle wiring and phosphorosilicate glass (PSG) film by etching as passivating film.
3. according to the manufacture method of the semiconductor image sensor IC of claim 1, wherein said organo-silicon compound comprise hexamethyldisiloxane.
4. according to the manufacture method of the semiconductor image sensor IC of claim 1, wherein chemically the chemical coating processes of passivation comprises the hexamethyldisiloxane coating processes, and this hexamethyldisiloxane coating processes is performed to utilize the preliminary treatment of the photoresist coating processes of photoresist silicon-coating wafer surface as being used to of adopting that the resist-coating machine implements.
5. according to the manufacture method of the semiconductor image sensor IC of claim 4, wherein the hexamethyldisiloxane coating processes comprises:
In the environment under 25 ± 5 ℃ temperature nitrogen is incorporated into the gas that contains hexamethyldisiloxane in the chemical vessel of placing hexamethyldisiloxane with generation; And
In gas blowing 30 to 60 seconds on wafer surface that will contain hexamethyldisiloxane, in wafer surface, prepared semiconductor image sensor IC and placed it on the calandria of the temperature that remains on 100 ± 5 ℃.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003299840A JP4372490B2 (en) | 2003-08-25 | 2003-08-25 | Semiconductor image sensor IC |
| JP299516/2003 | 2003-08-25 | ||
| JP299516/03 | 2003-08-25 | ||
| JP2003299516A JP4275491B2 (en) | 2003-08-25 | 2003-08-25 | Manufacturing method of semiconductor image sensor IC |
| JP299840/2003 | 2003-08-25 | ||
| JP299840/03 | 2003-08-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1591895A CN1591895A (en) | 2005-03-09 |
| CN100505283C true CN100505283C (en) | 2009-06-24 |
Family
ID=34621842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100682295A Active CN100505283C (en) | 2003-08-25 | 2004-08-25 | Method for manufacturing semiconductor image sensor IC |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101063031B1 (en) |
| CN (1) | CN100505283C (en) |
| TW (1) | TWI338363B (en) |
-
2004
- 2004-08-25 CN CNB2004100682295A patent/CN100505283C/en active Active
- 2004-08-25 KR KR1020040067245A patent/KR101063031B1/en active IP Right Grant
- 2004-08-26 TW TW093125562A patent/TWI338363B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101063031B1 (en) | 2011-09-07 |
| CN1591895A (en) | 2005-03-09 |
| TW200515593A (en) | 2005-05-01 |
| TWI338363B (en) | 2011-03-01 |
| KR20050021284A (en) | 2005-03-07 |
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