CN100508221C - Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element - Google Patents
Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element Download PDFInfo
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- CN100508221C CN100508221C CNB2003801024785A CN200380102478A CN100508221C CN 100508221 C CN100508221 C CN 100508221C CN B2003801024785 A CNB2003801024785 A CN B2003801024785A CN 200380102478 A CN200380102478 A CN 200380102478A CN 100508221 C CN100508221 C CN 100508221C
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000004020 luminiscence type Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 230000005855 radiation Effects 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000004807 localization Effects 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- -1 cerium) Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention relates to a method for producing a light source provided with electroluminescent diodes, in particular mixed colour diodes. The inventive method consists in transforming at least one part of primary radiation emitted a chip by means of luminescence conversion. The inventive chip comprises a front electric contact (in terms of a surface oriented towards a radiation emission) and a luminescence conversion material applied thereto in the form of a thin film. Prior to coating, the front electric contact is made higher by the application of a conductive material to the surface thereof. The inventive method makes it possible to adjust in a target manner a defined chromatic localisation controlling said chromatic localisation (IEC chromaticity diagram) and reducing the layer of the luminescence conversion material. Said method is convenient, in particular for simultaneously producing several light sources provided with electrolumeniscent diodes from the plurality of similar chips in a section composite substrate.
Description
Technical field
Present patent application requires the priority of German patent application 10257664.5 and 10250633.7, the content of described patent disclosure is adopted by quoting at this point.
The present invention relates to a kind of method of production LED source, wherein be changed wavelength by the part of a radiation that radiates in the chip at least, a kind of here luminescence conversion element directly is coated on the chip surface with the form of thin layer.
Background technology
A kind of device that has luminescence conversion element, for example in disclosed file WO 97/50132, know, it comprises a semiconductor chip (this chip gives off a radiation when work) and a kind of luminescence conversion element, converts the light of another wavelength to by the part of its radiation.The visual ray of consequent LED source is that the stack by two kinds of rays obtains, and especially specifically also can allow radiating light source produce white light thus.
Usually luminescence conversion element has a kind of luminescent material, and this luminescent material is embedded in the base material.Phosphor for example, as the garnet that contains rare earth metal (particularly cerium), or luminous organic material, all be suitable as luminescent material as the pearl luminescent material.The luminescent material that other is fit to for example mentions that at WO 98/12757 their content only need quote at this point and adopt.
For ray being mixed particularly well and obtaining color ray as far as possible uniformly with this, it is suitable luminescent material directly being coated in equably on the surface of chip, so that a radial road path difference that produces by luminescence conversion element is as far as possible little.Such as can not install on the lead frame as yet and before not connecing electricity at chip, just the form of luminescent conversion material with certain thickness very thin uniform coating is coated onto on the surface of light-emitting diode chip for backlight unit.The coating of shallow layer can realize that it is particularly useful for producing a plurality of LED source simultaneously with light-emitting diode chip for backlight unit by different modes, and the chip of this light-emitting diode chip for backlight unit and a large amount of same forms is positioned on the same wafer combination.And because the deposition of transition material, the color bits fluctuation of LED source has been avoided to a great extent.
Yet, (also promptly on the face of radiation direction) has the electric contact layer when employed light-emitting diode chip for backlight unit front, for example the diode of the base of the gallium nitride (GaN) on carborundum (SiC) base material comes to this usually, and applying shallow layer simply is not part thing easily.To the surface applied of this light-emitting diode chip for backlight unit the time, must be noted that the electrical property that connects that guarantees it.
Summary of the invention
Therefore, task of the present invention is a kind of method of exploitation, with its can realize having the front electric contact light-emitting diode chip for backlight unit simply and cost apply economically.
Above-mentioned task solves by following method.According to the invention provides a kind of production method that is used for the LED source of secondary colour, wherein changed by means of luminescent conversion by the part of the radiation that chip radiated at least.Steps of the method are: prepare a chip, it has the front electric contact of an electric interface form; By a kind of electric conducting material is coated to the front electric contact is thickened; Apply chip with a kind of luminescent conversion material, make the acomia at least in part light-converting material of coated electric conducting material.
According to above-mentioned method, especially make it possible on the wafer combination, produce a plurality of LED source simultaneously by same light-emitting diode chip for backlight unit.
Favourable improvement project of the present invention has also been described hereinafter.
And in the method, advantageously LED source color bits (CIE colour table) can be controlled very simply, and makes the control calibration of color bits in process of production become possibility.
In the method, prepare what a light-emitting diode chip for backlight unit, it has an a kind of top electric contact of electric interface form at least.And then this electric contact makes its thickening and is increased by a kind of electric conducting material is coated on the electric interface, the height of contact at least will be with last being of uniform thickness of being provided with of luminescent conversion layer.In further procedure of processing, chip surface is applied with the luminescent conversion material.
Employing can be carried out the coating that the front can connect electrical chip according to method of the present invention under the situation of not considering the contact, front.Therefore by electric contact, exactly be electric interface is come out (for example by means of a mask (Maske)), the coating process of such costliness has been reduced to not only simply but also cost applies whole surface economically.
Described is the base material that the luminescent conversion material preferably has a kind of transmissive radiation, and this base material can mix with luminescent material.
This base material for example can have silicon dioxide (SiO
2) and/or alundum (Al (Al
2O
3), the luminescent conversion material can reach required denseness (for example hardness) thus so that its can be under multiple mode easily with controllably by thinning.
In a particularly preferred embodiment of this method, the base material of transmissive radiation has a kind of oxide and/or nitride, and its refractive index is between 1.5 and 34.Because reflection in boundary face, the loss of radiation intensity can be avoided by a kind of luminescent conversion material, and the refractive index of this luminescent conversion material does not have strong difference with the refractive index on light-emitting diode chip for backlight unit surface and between the refractive index and environment refractive index on light-emitting diode chip for backlight unit surface.
This method has special advantage, and promptly and then the electric contact that is covered by the luminescent conversion material is exposed at least in part by the thinning of luminescent conversion material.That is to say that electric contact needn't all expose, or rather, only exposed just enough when the part surface of electric contact.This simple measure makes the application of many coating methods become possibility, and for example vapor plating or sputter is because the electric contact of front can be capped in this way.
In a preferred embodiment of this method, and then the coating of luminescent conversion material is flattened by thinning.For example in coating, because the electric contact that has increased the front can cause the out-of-flatness of coating.Thinning by coating can obtain littler fluctuation of LED source color bits (CIE colour table) and the better repeatability of LED source color bits (CIE colour table).
Because top electric contact, and then the color bits of LED source can be controlled in its particularly advantageous mode.This control preferably can be carried out in the process of luminescent conversion material thinning of coating, promptly when top electric contact passable once exposing.
The thickness of luminescent conversion material coating can be calibrated in the very practical thinning of passing through coating.
And the control by the LED source color bits, can between the thickness of radiative transition coating and color bits, measure their correlation.For by color bits is on purpose calibrated in the luminescent conversion material thinning of coating, use this method advantageous particularly.
This method is particularly useful for producing a plurality of LED source simultaneously by using a large amount of same chips form, that preferably be positioned at jointly on original wafer combination.Therefore carry out simultaneously at least basically for the corresponding procedure of processing of chip on the wafer combination.Make the obviously richer efficient of production of LED source and cost economy more thus.
Because the light of light-emitting diode chip for backlight unit is in the past surface radiation and radiation from the side not only, therefore in this class chip with regard to advantageous particularly, the side of light-emitting diode chip for backlight unit is also applied with the light-emitting diode transition material at least in part.Just most suitable when a large amount of light-emitting diode chip for backlight unit on the wafer combination are applied, the line of demarcation along single chip chamber before coating processes groove, and this groove is filled up by the luminescent conversion material in back to back chip coating process at least in part.
Another scheme is, at first the entire wafer combination is arranged on the carrier securely with the bottom surface, then with chip by cutting apart on the wafer combination, and it still all is cemented on the carrier, that is to say that next they still remain on the combination by means of carrier.The side that has equally also guaranteed light-emitting diode chip for backlight unit is covered by the luminescent conversion material in ensuing coating at least in part.
When using according to method of the present invention, produce a plurality of LED source simultaneously by a large amount of same chips on the wafer combination and can advantageously adopt this scheme, promptly in the process of luminescent conversion material thinning, check the color bits of LED source.Definite and the grasp of the color bits of LED source and position provides this possibility on the wafer combination, and LED source is classified according to its color bits, therefore obtains LED source color bits specification particulars more accurately.
Can especially advantageously be applied to this according to method of the present invention, promptly the LED source on the entire wafer combination be calibrated a definite color bits as far as possible exactly.Because the height of the light-emitting diode chip for backlight unit on wafer combination is not uniform on entire wafer, the fluctuation of height for example may reach 20 microns, thereby the homogenizing and thinning of luminescent conversion material on entire wafer can cause radiative transition coating to form different thickness.This problem can be by means of solving according to method of the present invention, and method is after the color bits of the LED source on wafer and position are determined and grasp, wafer to be divided by the zone of the LED source that similar color bits is arranged.Press zone thinning selectively by radiative transition coating, simultaneously the color bits of a light source in the LED source of respective regions is controlled repeatedly, just can realize each zone calibration of fixation position really like this to each single zone.
Description of drawings
Other advantage and preferred embodiment next by Fig. 1 a to three embodiment explanations shown in the 2b.As shown in the figure:
Fig. 1 a is to 1f: under the different processing stages of first embodiment, and the constructed profile of a wafer,
Fig. 2 a is to 2b: under the different processing stages of second embodiment, the constructed profile of a wafer and
Fig. 3 a is to 3b: according to the 3rd embodiment of the inventive method, and under different processing stages, the constructed profile of a wafer.
Embodiment
Shown in Fig. 1 a is a wafer 1, comprises a carborundum (SiC) matrix 11 and an epitaxial semiconductor stratose 10 that has indium gallium nitride (InGaN) base that sends radiation active region (not shown).The active region for example has a p-n junction that produces radiation, perhaps a single or multiple quantum structure that produces radiation.This structure is very familiar to those of ordinary skill, therefore just has been not described further.For example described a kind of multiple quantum structure in WO 01/39282 A2, its content can be adopted by quoting.On wafer 1, electric interface 2 always is positioned at the chip grid (chipraster) of front.
In Fig. 1 b, other procedure of processing is described, has realized increasing of electric contact on the electric interface 2 by electric conducting material 3 is coated to.Electric conducting material 3 is similar to elliptical shape, for example can be made of gold.Electric conducting material 3 only needs a minimum constructive height, and not needing all has identical height, and this fact is the another one advantage of this method.
And then shown in Fig. 1 c, the surface of the whole front of wafer combination 1 applies with luminescent conversion material 4, wherein can carry out the coating on surface by vapor plating, sputter, rotary spraying or additive method.The luminescent conversion material can be made of the garnet material that contains cerium (Ce), and particularly by yttrium-aluminium-garnet (YAG): cerium (Ce) constitutes.Importantly, the coating that applies with luminescent conversion material 4 must reach certain minimum thickness in the entire wafer zone in this step.
By the and then thinning of radiative transition coating to having hardened, the coating that has applied luminescent conversion material 4 can obtain a homogeneous thickness, shown in Fig. 1 d.The thinning of coating realizes by means of the wearing and tearing of a grinding face 5.
As long as electric conducting material 3 exposed by thinning one, on single chip area, just can on purpose electrically contact and connected voltage.At this moment just can measure the color bits of radiant light 6 by means of a spectrometer 7, shown in Fig. 1 e.Can for example go out whole white lights on purpose further with its thinning up to led radiation.
For example can also with the luminescent conversion material on all chips basically with same degree thinning.Because being distributed on the entire wafer and generally, the color bits of the light-emitting diode chip for backlight unit of a wafer changes, people can divide wafer in the zone of the light-emitting diode that has similar color bits selectively, and then the luminescent conversion material according to the zone selectively by thinning, for example, the color bits of the LED source in the zone is advantageously repeated to control the color bits of the LED source in zone of adjustable by in the process of thinning.For example, can and then measure and grasp corresponding color bits and the relevant position of all LED source on wafer by finishing a so-called wafer map.
Shown in Fig. 1 f, on wafer combination 1, chip is cut apart at last along line of demarcation 8.For example this can realize by sawing.At this moment the chip that segments just can be classified according to their color bits.
In Fig. 2 a and 2b, illustrate according to second embodiment of the inventive method with different to 1f the above embodiments according to Fig. 1 a, before coating luminescent conversion material 4, on the chip grid front on the wafer 1,13 have processed groove 12 (Fig. 2 a), this for example can realize by sawing along the line of demarcation.In the further course of processing, will on the front of chip, apply luminescent conversion material 4, so that surpass the thickness (Fig. 2 b) of the electric conducting material 3 of coating on electric interface 2 at least in the coating on the groove 12.Therefore the side 14 of groove 12 is covered by luminescent conversion material 4 fully.Coated luminescent conversion material 4 will make that the radiation of sending in chip sides is changed equally in groove 12.Shown in Fig. 2 b, after luminescent conversion material 4 was by thinning, chip will be along the line of demarcation 13 be cut apart.
The mode of groove is processed in replacement along the line of demarcation in the wafer front, wafer can be bonded on the carrier with its bottom surface in another scheme, and then chip is separated on the wafer combination simultaneously, still connect together securely by carrier chip simultaneously, simultaneously each chip all will keep each other one definite apart from (not shown).Cut apart and for example to realize by sawing.For example can use a kind of adhesive and/or resilient film as carrier.For example a resilient film can be elongated after chip is cut apart, so that the mutual distance of chip can increase on one or more direction equably.
And then on carrier, can apply the luminescent conversion material, so that the space segment ground between adjacent chips or be filled fully.Can realize in the present embodiment, all be covered that the light source of the light-emitting diode of Zhi Zaoing can be realized radiation characteristic especially uniformly in this way by the luminescent conversion material until all surface of chip back.
At the third embodiment shown in Fig. 3 a and the 3b,, after luminescent conversion material 4 is coated, do not cover the electric conducting material 3 that applies previously with different to the foregoing description shown in the 1f according to Fig. 1 a.This for example can realize by using the very little luminescent conversion material 4 of viscosity, and it is coated at least one position between two electric contacts, is distributed evenly on the surface owing to viscosity is little simultaneously.Thinning at this luminescent conversion material has been cancelled, and electric conducting material 3 is not capped at least in part.After 4 age-hardenings of luminescent conversion material, LED source just can have been separated.
Certainly can not be considered as the present invention by means of embodiment to the explanation of this method and just be confined to this.For example the front of chip can be the face of base material back to the coated semiconductor row, and for example being used for flip chip installation (Flip-chip-Montage) set LCD (LED) chip is exactly this situation.And chip can have a plurality of electric contacts on the front of its chip.Present invention includes each new feature and combination of features that each is announced in general, especially comprised the combination of features of each in the patent claims, do not do detailed explanation in the patent claims even this is combined in.
Claims (12)
1. be used in particular for the production method of the LED source of secondary colour, wherein at least a portion by the radiation that chip radiated is changed by means of luminescent conversion,
The step of described method is:
-prepare a chip, it has the front electric contact of an electric interface form,
-by a kind of electric conducting material is coated to the front electric contact is thickened,
-apply chip with a kind of luminescent conversion material, and apply with this luminescent conversion material chip during, keep coated electric conducting material to have a part of acomia light-converting material at least.
2. in accordance with the method for claim 1, it is characterized in that the luminescent conversion material has a kind of base material that can transmitted radiation, described base material is mixed with a kind of luminescent material.
3. in accordance with the method for claim 2, it is characterized in that described base material that can transmitted radiation has silicon dioxide and/or alundum (Al.
4. in accordance with the method for claim 2, it is characterized in that described base material that can transmitted radiation has a kind of oxide and/or a kind of nitride of refraction coefficient between 1.5 to 3.4.
5. according to each described method in the claim 1 to 3, it is characterized in that the coating of luminescent conversion material is flattened by thinning.
6. in accordance with the method for claim 1, it is characterized in that, calibrate its thickness by the thinning of luminescent conversion material coating.
7. in accordance with the method for claim 6, it is characterized in that carry out in the process of thinning in the color bits control by means of LED source, the color bits of LED source is calibrated by the thickness of luminescent conversion material coating.
8. in accordance with the method for claim 1, it is characterized in that,
-the chip of launching a radiation is positioned on the same wafer combination with other chips of a large amount of same forms,
The corresponding procedure of processing of the chip the on-entire wafer combination is always carried out simultaneously,
And then-chip is divided into LED source.
9. in accordance with the method for claim 8, it is characterized in that, before with luminescent conversion material coating chip, process groove along the line of demarcation between the single chip, and then with luminescent conversion material coating chip the time so that these grooves are filled up by the luminescent conversion material at least in part.
10. in accordance with the method for claim 8, it is characterized in that, before with luminescent conversion material coating chip
-the entire wafer combination is adhered on the carrier with its bottom surface,
-chip on the wafer combination is separated, and chip still is bonded on the carrier securely,
The side of-the chip that separates is covered by the luminescent conversion material when chip applies at least in part,
-and then the chip on the wafer combination is divided into single LED source by carrier and luminescent conversion material.
11. according to each described method in the claim 8 to 10, it is characterized in that, determined and grasped the color bits and the position of LED source before chip is divided into LED source, the LED source after cutting apart is classified according to their color bits.
12. according to each described method in the claim 8 to 10, it is characterized in that, before chip is cut apart, implement following procedure of processing according to priority:
-determine and grasp the color bits and the position of LED source,
-wafer is divided by the zone of the LED source that similar color bits is arranged,
-by the luminescent conversion material thinning selectively to single zone, calibration has each color bits of determining in the LED source zone of similar color bits.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10250633 | 2002-10-30 | ||
| DE10250633.7 | 2002-10-30 | ||
| DE10257664.5 | 2002-12-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1708863A CN1708863A (en) | 2005-12-14 |
| CN100508221C true CN100508221C (en) | 2009-07-01 |
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| CNB2003801024785A Expired - Fee Related CN100508221C (en) | 2002-10-30 | 2003-10-21 | Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009048401A1 (en) * | 2009-10-06 | 2011-04-07 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component |
| US8841145B2 (en) | 2010-12-08 | 2014-09-23 | Bridgelux, Inc. | System for wafer-level phosphor deposition |
| CN103339720A (en) * | 2010-12-08 | 2013-10-02 | 普瑞光电股份有限公司 | System for wafer-level phosphor deposition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1111689A2 (en) * | 1999-12-21 | 2001-06-27 | Toshiba Corporation | Semiconductor light emitting element and manufacturing method thereof |
| JP2001177158A (en) * | 1999-12-16 | 2001-06-29 | Matsushita Electronics Industry Corp | Semiconductor light emitting device and manufacturing method therefor |
| US6350668B1 (en) * | 1999-06-07 | 2002-02-26 | Kishore K. Chakravorty | Low cost chip size package and method of fabricating the same |
| JP2002118293A (en) * | 2000-07-31 | 2002-04-19 | Nichia Chem Ind Ltd | Light-emitting device and forming method thereof |
| EP1221724A2 (en) * | 1996-09-20 | 2002-07-10 | Osram Opto Semiconductors GmbH & Co. OHG | Sealing material with wavelength converting effect, application and production process |
-
2003
- 2003-10-21 CN CNB2003801024785A patent/CN100508221C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1221724A2 (en) * | 1996-09-20 | 2002-07-10 | Osram Opto Semiconductors GmbH & Co. OHG | Sealing material with wavelength converting effect, application and production process |
| US6350668B1 (en) * | 1999-06-07 | 2002-02-26 | Kishore K. Chakravorty | Low cost chip size package and method of fabricating the same |
| JP2001177158A (en) * | 1999-12-16 | 2001-06-29 | Matsushita Electronics Industry Corp | Semiconductor light emitting device and manufacturing method therefor |
| EP1111689A2 (en) * | 1999-12-21 | 2001-06-27 | Toshiba Corporation | Semiconductor light emitting element and manufacturing method thereof |
| JP2002118293A (en) * | 2000-07-31 | 2002-04-19 | Nichia Chem Ind Ltd | Light-emitting device and forming method thereof |
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