CN100521277C - Electric device comprising phase change material - Google Patents
Electric device comprising phase change material Download PDFInfo
- Publication number
- CN100521277C CN100521277C CNB2003801071076A CN200380107107A CN100521277C CN 100521277 C CN100521277 C CN 100521277C CN B2003801071076 A CNB2003801071076 A CN B2003801071076A CN 200380107107 A CN200380107107 A CN 200380107107A CN 100521277 C CN100521277 C CN 100521277C
- Authority
- CN
- China
- Prior art keywords
- phase
- change material
- electric device
- resistor
- contact zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012782 phase change material Substances 0.000 title claims abstract description 133
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 21
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 17
- 229910052718 tin Inorganic materials 0.000 claims abstract description 14
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims abstract description 11
- 238000002425 crystallisation Methods 0.000 claims description 51
- 230000008025 crystallization Effects 0.000 claims description 51
- 239000004020 conductor Substances 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract description 11
- 230000009466 transformation Effects 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 11
- 230000002349 favourable effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000004927 fusion Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- CYKMNKXPYXUVPR-UHFFFAOYSA-N [C].[Ti] Chemical compound [C].[Ti] CYKMNKXPYXUVPR-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021352 titanium disilicide Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Abstract
The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whether the phase change material is in the first phase or the second phase. The resistor (7, 250) is able to conduct a current for enabling a transition from the first phase to the second phase. The phase change material is a fast growth material which may be a composition of formula Sb1-cMc with c satisfying 0.05 <= c <= 0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, or a composition of formula SbaTebX100-(a+b) with a, b and 100-(a+b) denoting atomic percentages satisfying 1 <= a/b <= 8 and 4 <= 100-(a+b) <= 22 , and X being one or more elements selected from Ge, In, Ag, Ga and Zn.
Description
Technical field
The present invention relates to a kind of electric device, device main body has the resistor that comprises phase-change material, this phase-change material can change mutually and between second phase first, the resistance of this resistor depends on that phase-change material is in first mutually or second phase, this resistor can conduction current, second changes mutually in opposite directions from first allowing to.
Background technology
WO-A00/57,498 disclose a kind of embodiment with electric device of the resistor that comprises phase-change material, and the approximate composition of phase-change material is Sb
2Te
5Ge
2For example, it can be Sb
22Te
56Ge
22Or Sb
29Te
57Ge
14Has different resistance values if having the resistor of the phase-change material that is in first phase with resistor with the phase-change material that is in second phase, phase-change material can be in first phase, for example can be crystalline state, first and/or second can be part amorphous state and part crystalline state mutually.
Resistor is electrically connected to first conductor and second conductor, thereby can measured resistance value.First conductor and second conductor can comprise, for example, and one or more in the following material: titanium, titanium nitride, TiAlN, TiCN (titanium carbon nitride), silicon titanium, molybdenum, carbon, tungsten and titanium tungsten.
Resistor, first conductor and second conductor can conduction currents, and electric current can impel phase-change material first mutually and second change between mutually by heating.Think for from phase with good relatively conductivity (as crystalline phase or based on the phase of crystalline phase), be converted to the phase (as amorphous phase or based on the phase of amorphous phase) of conductivity, use great current flow heats to cause the phase-change material fusing with relative mistake.These two speech of " crystalline state " and " amorphous state " refer to crystalline phase or based on crystalline phase mutually respectively hereinafter, and amorphous phase or based on the phase of amorphous phase.Described heating can realize by the resistance of first conductor, second conductor, resistor itself and the contact resistance between these elements.In these resistance which generally depended on the material and the shape of these elements to the contribution maximum of described heating.When electric current disconnects, heat and stop.Phase-change material cooling and present more unordered state then.
When impel have low relatively conductivity have the transformation mutually of high relatively conductivity in opposite directions the time, above-mentioned heating is initial owing to poorly conductive is obstructed, poorly conductive has limited the electric current by phase-change material.Believe that so-called puncture voltage may cause local electrical breakdown in phase-change material by applying sufficiently high voltage at the resistor two ends, this causes high local current densities.Corresponding then heating enough makes the temperature of phase-change material be increased to the value that is higher than its crystallization temperature, impels thus from the transformation of amorphous phase to crystalline phase.
Known electric device can be used as the adjustable resistor of resistance.Such device can be used in all types of circuit and the integrated circuit, the resistor that these circuit need resistance to switch between first value and second value.
Known electric device is particularly suitable for as carrying by the electronically written of resistance value information encoded and wiping memory cell.For example, when resistance was relatively low, memory cell was by assignment " 0 "; When resistance is higher relatively, by assignment " 1 ".By applying voltage at the resistor two ends and measuring corresponding electric current and can measure resistance at an easy rate.By causing that aforesaid phase transformation by first to second phase can be with the information writing memory element with from memory cell erase information.
A shortcoming of known electric device is that the fringe time from the amorphous phase to the crystalline phase is longer relatively.This has limited the setting speed of resistor values.
EP 495 494 B1 disclose a kind of electric erasable phase transition storage.A kind of non-volatile memory device of the SbGeTe of comprising compound phase-change material has wherein been described.The memory array of this non-volatile memory device is disclosed equally.The relevant multielement alloy crystalline that may show reversible transition between amorphous and the crystalline state is being discussed aspect the material field, described reversible transition owing to atomic migration, spread and the minimizing rearranged has the transition kinetics of enhancing.
Summary of the invention
An object of the present invention is to provide the electric device described in first section, it has the fringe time of short relatively amorphous phase to crystalline phase.
The present invention is defined by independent claims.Dependent claims has defined preferred embodiment.
The kind that a viewpoint of institute of the present invention foundation is a phase-change material used in the present invention has the mechanism of crystal growth that is different from known phase change.Be used for the known phase change of electric device, the transformation from the amorphous phase to the crystalline phase takes place by nucleation, i.e. the point of crystallization several random distribution in the amorphous phase.So the crystallization time in known device and the volume-independent of amorphous phase.It is limited by nucleation time, is approximately 50ns for the known phase change nucleation time.
In contrast, electric device according to the present invention comprises the phase-change material that is called quick growth material.Fast in the growth material, with high-speed rapid growth, this speed is called crystallization rate to crystalline phase from the interface of amorphous phase and crystalline phase.For these materials, the volume of crystallization time and amorphous phase is relevant.This feasible relative weak point of fringe time from the amorphous phase to the crystalline phase, particularly the amorphous phase size is relative hour, for example, less than 50nm.
In the optical recording field, these and Sb
69Te
31The amorphous phase advantageous feature relevant with the phase transformation between the crystalline phase can be from being published in the Japanese Journal of Applied Physics of calendar year 2001, volume40, learn that this article author is H.J.Borg etc. in " Phase-change media for high-numerical-aperture andblue wavelength recording " literary composition of 1592-1597 page or leaf.But this piece article is not mentioned quick growth material and is had other characteristic surprisingly, and these characteristics are suitable as according to the phase-change material in the electric device of the present invention it.Inventor of the present invention confirms that especially these quick growth phases can change first mutually and between second phase than material, the resistance of resistor depends on that phase-change material is in first mutually or second phase, and this resistor can conduct and make it possible to the electric current that is converted to second phase mutually from first.
In electric device according to the present invention, the phase-change material of resistor directly contacts with the crystallizing layer with crystal structure, and this crystallizing layer has under the situation of the surface region that directly contacts with the material that is different from phase-change material at the volume with amorphous phase be favourable.When the phase transformation carried out from the amorphous phase to the crystalline phase, begin growth from the interface of crystalline phase and amorphous phase according to the phase-change material of electric device of the present invention.Therefore at the surface region that directly contact with the material that is different from phase-change material, the crystallization delay causes the crystallization time of growing relatively.Have the crystallizing layer of crystal structure by introducing, can quicken the crystal growth of surface region.The crystal structure of preferred crystallizing layer is similar to the crystal structure of phase-change material.
Preferably, electric device according to the present invention comprises the phase-change material that crystallization rate is at least 1m/s.The amorphous phase change material size of known electric device is about 10-20nm.Will phase-change material according to the present invention be applied in that the result obtains 10-20ns or switching time still less in such electric device.
In one embodiment, the composition formula of phase-change material is Sb
1-cM
c, wherein C satisfies 0.05≤c≤0.61, and M is selected to comprise Ge, In, Ag, Ga, Te one or more elements of the group of Zn and Sn.Alternatively, this material can comprise relatively small amount, and for example less than other element of 5 atomic percents, as As, S, Se, these elements can obviously not change crystallization and electrical breakdown behavior.
Electric device according to the present invention has additional advantage, promptly is converted to the needed puncture voltage of low resistance crystalline state from the high resistance amorphous state and is lower than the needed voltage of known electric device.This point is especially favourable when using advanced transistors to switch this electric device, because advanced transistors has less size, thereby can only provide relatively little voltage.The inventor has confirmed that puncture voltage is roughly proportional with the band gap that is in amorphous phase-change material, and band gap reduces with the increase of Sb content.Preferred phase-change material comprises the Sb of at least 50 atomic percents.More preferably phase-change material comprises one or more element M of at least 10 atomic percents, because increased amorphous stability like this, and is in amorphous phase-change material can bears high relatively temperature before spontaneous recrystallization takes place.
Another advantage according to electric device of the present invention is a fact, i.e. the resistivity of crystalline phase low than in the known electric device.Therefore, the ohmic loss in crystalline phase can be saved power consumption than lacking in the known electric device.In addition, in electric device according to the present invention, between first conductor and the phase-change material and little than in the known electric device of the contact resistance between second conductor and the phase-change material.This allows to use less first contact zone and/or second contact zone, and this causes short amorphous phase to the crystal transition time for electric device according to the present invention.
In electric device according to the present invention, the amount of the Te of use is than lacking in the known electric device.The advantage of doing like this is the active low of phase-change material, has improved the stability of electric device.Particularly the reaction at the interface between phase-change material and the conductor that is attached thereto reduces.In addition, because Te amount reduces, have low relatively vapour pressure according to the phase-change material of electric device of the present invention, thereby can adopt the high processing temperature.Preferred phase-change material does not contain Te substantially.
Preferably, one or more element M comprise Ge and/or Ga.The electric device of being made up of the phase-change material that comprises Ge and/or Ga has the high relatively advantage of crystallization temperature, so amorphous phase all is stable up to high relatively temperature.The stability of crystallization temperature and amorphous phase is along with Ge and/or Ga concentration increase and increases.Preferred phase-change material comprises Ge and/or the Ga that total concentration is the 5-35 atomic percent, more preferably the total concentration of Ge and/or Ga is the 15-25 atomic percent, general preferred phase-change material comprises the Ge that is less than 30 atomic percents, because otherwise crystallization temperature and fusion temperature are too high, so that the high relatively energy of needs causes the transformation from the amorphous phase to the crystalline phase and returns.Crystallization rate reduces when the total concentration of Ge and/or Ga increases.Crystallization rate can be used for regulating crystallization rate to the dependence of Ge and/or Ga concentration.
In addition, also preferred phase-change material comprises the Ga that is less than 35 atomic percents because Ga concentration when higher the resistance difference of amorphous phase and crystalline phase less, produce error when this causes measuring resistance.Preferred phase-change material comprises the Ga that is less than 25 atomic percents.
In one embodiment, phase-change material comprises In and/or Sn.Preferred phase-change material comprises In and/or the Sn that total concentration is the 5-30 atomic percent.The phase-change material that comprises In and/or Sn has high relatively crystallization rate and relative low fusion temperature, this means that the phase transformation that causes from first to second phase needs relatively little energy.If it is normally favourable that phase-change material comprises In and/or Sn that total concentration is the 15-25 atomic percent.Preferred phase-change material comprises these materials of about 20 atomic percents.
When phase-change material comprised total concentration and surpasses the Ge of 20 atomic percents and/or Ga, preferred phase-change material also comprised one or more elements that are selected from In and Sn, and its concentration is less than 30 atomic percents.Owing to exist Ge and/or Ga to have high relatively amorphous phase stability, and, existence has relative low fusion temperature according to the electric device of this embodiment because being selected from one or more elements of In and Sn.
In the modification of this embodiment, the composition formula of phase-change material is Sb
aTe
bX
100-(a+b), wherein a, b and 100-(a+b) expression atomic percent satisfies 1≤a/b≤8 and 4≤100-(a+b)≤22, and X is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Zn and Sn.The advantage of adding latter element is that phase-change material has high relatively crystallization rate.Alternatively, this material can comprise relatively small amount, and for example less than other element of 5 atomic percents, as As, S, Se, these elements can obviously not change crystallization and electrical breakdown behavior.
If element X comprises Ge, then be favourable.The advantage that the electric device of being made up of the phase-change material that contains Ge has is that crystallization temperature is high relatively, so amorphous phase all is stable up to higher temperature.
In one embodiment, phase-change material comprises greater than 10 atomic percents and less than the Ge of 22 atomic percents.In the case, the crystallization temperature of phase-change material is 180-250 ℃.When crystallization temperature was lower than 180 ℃, the stability of amorphous phase may be not enough, particularly when electric device stands higher temperature.When crystallization temperature was higher than 200 ℃, when for example being 250 ℃, the higher transition power of needs caused the transformation from the amorphous phase to the crystalline phase.
If first contact zone is less than or equal to second contact zone, then be favourable, first contact zone has characteristic size d (nm of unit), and 6a/b is less than d.This embodiment of the present invention is based on following understanding: in order to carry out by the phase transformation of crystalline phase to amorphous phase, require cooling time (being the time that phase-change material is cooled to be lower than the temperature of crystallization temperature) less than crystallization time (promptly turning back to the time of crystalline phase from amorphous phase).If this condition can not satisfy, the non-crystalline material that in cooling procedure, melts crystallization again, cause and heating before identical phase, promptly can not realize the phase transformation from the crystalline phase to the amorphous phase.
For the phase-change material according to electric device of the present invention, crystallization begins in amorphous phase and crystalline phase interface.Therefore, crystallization time is obtained divided by crystallization rate by the characteristic size of amorphous phase.Herein, characteristic size is the ultimate range between the point of the interface between amorphous phase-crystalline phase and last crystallization when phase transformation begins.This size is similar to the characteristic size of first contact zone, supposes that first contact zone is not more than second contact zone.
The inventor has determined cooling time and the crystallization rate that has been determined by experiment as the function of phase-change material composition by simulating.Be used in combination the result of these simulations and measurement with above-mentioned criterion, show that 6a/b must be less than d (d unit be nm) in order to prevent the perfect recrystallization in the amorphous phase cooling procedure.
In some cases, the characteristic size of amorphous phase-change volume exceeds first contact zone, and amorphous phase is about the twice of the first contact zone size.Can be loosened to 3a/b less than d (d unit is nm) with requiring thus.In the case, can use surface area is 1/2nd first contact zone.
If crystallizing layer has the thickness less than 100nm, then be favourable.Crystallizing layer is potential heat sink, and is special because its crystal structure.Be used for promoting that in order to limit the corresponding heat of heating process of phase transformation flows out from phase-change material, crystallizing layer should be thinner.Thickness causes bigger heat to flow out from phase-change material greater than the crystallizing layer of 100nm.The thickness of preferred crystallizing layer is less than 50nm.
Preferred crystallizing layer directly contacts with first contact zone and/or directly contacts with second contact zone, because phase-change material is normally amorphous near first contact zone and/or second contact zone.If crystallizing layer conduction also is electrically connected first contact zone and second contact zone, and is then normally favourable.In the case, crystallizing layer constitutes the electric bypass that is arranged in parallel with phase-change material.Therefore crystallizing layer can conduction current, and this electric current can be used to the indirect phase-change material, to promote the phase transformation of from first to second phase.
The fusion temperature of preferred crystallizing layer is higher than the fusion temperature of phase-change material.Preferred crystallizing layer chemistry is relatively stable to reduce the probability that the crystallizing layer material mixes with phase-change material.
If a plurality of positions of storage in an electric device, then crystallizing layer is especially favourable.Which position of volume decision storage of the phase-change material that undergoes phase transition in the case.Therefore utilize and extend beyond volume first contact zone and/or second contact zone, the experience phase transformation normally easily.Particularly crystallizing layer is useful in these cases.
In a embodiment according to electric device of the present invention, first conductor, second conductor, resistor and this layer constitute memory element, and main body comprises memory cell array, each memory cell comprises memory element and selector separately and selection wire network separately, can visit each memory cell separately by the selection wire separately that is connected to selector separately.
This electric device can as non-volatile, electricity can write, readable and electricity erasable memorizer.Because each memory element comprises selector, therefore can select each memory element to be used for reading of data easily, promptly be used for measured resistance value, and be used to write and wipe, promptly cause the phase transformation of from first to second phase.
Memory element of the present invention can be electrically coupled to selector and be coupled to selection wire, thereby forms memory array.Selector allows each discrete memory cell of read and write, is not stored in the array nearby or the information in the remote memory cells and do not influence.Usually, the invention is not restricted to use the selector of any particular type.The example of selector is given and being comprised, for example field-effect transistor, bipolar junction transistor and the diode that can learn from WO-A97/07550.The example of field-effect transistor comprises such as JFET that learns from WO-A00/39028 and mos field effect transistor (MOSFET).The example of MOSFET comprises nmos pass transistor and PMOS transistor.In addition, for the CMOS technology, NMOS and PMOS even can on identical chips, form.
Common such electric device should be compact as far as possible, this means that adjacent resistor distance each other is little.In these comprise electric device according to dielectric material of the present invention, the minimizing of crosstalking.
In one embodiment, selector comprise have the source region, the MOSFET of drain region and gate regions, and the selection wire network comprises N first selection wire, M second selection wire (N and M are integer) and output line.First conductor of each memory element is electrically connected to the source region that is selected from the corresponding metal oxide semiconductor field effect transistor and first district in the drain region; Second conductor of each memory element is electrically connected to output line; Second district of corresponding metal oxide semiconductor field effect transistor is electrically connected in N first selection wire, and this second district is selected from the source region with the drain region and do not contact first district, and gate regions is electrically connected in individual second selection wire of M.
In the device of this type, resistor can integrate with selector easily.
Description of drawings
With these and other aspect that further specifies and describe with form with reference to the accompanying drawings according to electric device of the present invention, wherein:
Fig. 1 is the cross section of an embodiment of this electric device;
Fig. 2 A and 2B are respectively the transformation diagrams from the amorphous phase to the crystalline phase and from the crystalline phase to the amorphous phase;
Fig. 3 illustrate from amorphous phase when the crystal transition electric current as the function of applying voltage;
Fig. 4 is the crystallization rate figure as the function of Sb/Te ratio;
Fig. 5 is the crystallization rate figure that contains flow function as Ge;
Fig. 6 A and 6B are respectively as Sb
85Ga
15And Sb
85Ge
15The figure of the sheet resistance of the function of temperature;
Fig. 7 is the cross-sectional view of another embodiment of this electric device.
Wherein:
The embodiment of the phase-change material that comprises Te that uses in the table 1 expression electric device;
The crystallization temperature of table 2 expression heterogeneity;
Table 3 expression composition formula is Sb
1-cM
cThe example of phase-change material, wherein c satisfies 0.05≤c≤0.61, M is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Te, Zn and Sn.
The minimum feature size of the phase-change material in the table 4 expression table 1.
The figure not drawn on scale.Usually, identical part is represented with identical reference number.
Embodiment
As shown in Figure 1, electric device 1 has the main body 2 that comprises substrate 10, and substrate 10 can comprise, for example, and monocrystalline p-type doped silicon semiconductor wafer.On a main surface of substrate 10, resistor 7 is embedded in the medium 13 (for example silica).Resistor 7 comprises the phase-change material that can change between first phase and second phase.The phase-change material of electric device 1 is quick growth material, and it preferably has the crystallization rate of 1m/s at least.In one embodiment, the composition formula of this phase-change material is Sb
1-cM
c, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements that are selected from Ge, In, Ag, Ga, Te, Zn and Sn.Preferred c satisfies 0.05≤c≤0.5.More preferred c satisfies 0.10≤c≤0.5.One group of favourable phase-change material has the element M of one or more total concentrations except that Ge and Ga less than 25 atomic percents, and/or comprises Ge and/or the Ga of total concentration less than 30 atomic percents.Comprise the Ge that surpasses 20 atomic percents and Ga and be selected from In and Sn, total concentration is that the phase-change material of one or more elements of 5-20 atomic percent has relative high crystallization rate, has higher relatively amorphous phase stability simultaneously.
In another embodiment, the composition formula of phase-change material is Sb
aTe
bX
100-(a+b), a, b and 100-(a+b) represent atomic percent, satisfy 1≤a/b≤8 and 4≤100-(a+b)≤22, X is one or more elements that are selected from Ge, In, Ag, Ga, Zn.For example, this phase-change material can be Sb
72Te
20Ge
8, other embodiment of the phase-change material of the above-mentioned type below will be described.The surface of resistor 7 has first contact zone 5 and second contact zone 6, and the resistance R between these two contact zones.When being in the first phase time resistance, phase-change material has first value; And have second value when phase-change material is in the second phase time resistance." Phase-change mediafor high-numerical-aperture and blue wavelength recording " is described as article, and phase-change material can pass through sputtering sedimentation.This article author is H.J.Borg etc., is published in Japanese Journal of Applied Physics, volume 40, the 1592-1597 pages or leaves, 2001.
Feature for the transformation behavior that embodies electric device 1 applies voltage U between contact pad 11 and 12, measure to apply the electric current I that produces behind the voltage.Typical measurement result is shown in Fig. 2 A and 2B, and wherein solid line and dotted line are represented voltage U and electric current I respectively.
For the measurement of Fig. 2 A, resistor 7 beginnings are amorphous phase when t=0.When t=50ns, apply first potential pulse of about 0.15V, apply at this potential pulse and can not produce any tangible electric current I in the process.In fact this phase-change material that shows resistor is in the high resistance amorphous state.When t=200ns, apply second potential pulse of about 0.5V, during this potential pulse, produce the electric current I of 300 μ A really.Therefore the voltage that provided this moment detect tangible electric current I greater than puncture voltage.When t=370ns, apply and the essentially identical tertiary voltage pulse of first potential pulse, it produces the observable electric current I of about 80 μ A.This shows at tertiary voltage impulse duration phase-change material and is in the phase with more low-resistance more crystallization.At the flow through enough heating phase-change materials of electric current of resistor 7 of second impulse duration, to impel the transformation from the amorphous phase to the crystalline phase.
For the measurement of Fig. 2 B, resistor 7 beginnings are crystalline phase when t=0.When t=50ns, apply and essentially identical the 4th potential pulse of first potential pulse, it produces the electric current I of observable about 80 μ A really.This shows that phase-change material is in the phase with more low-resistance more crystallization, is similar to the situation when applying the tertiary voltage pulse.When t=200ns, apply the 4th potential pulse of about 0.8V, during this potential pulse, produce the electric current I of 700 μ A really.The voltage that herein applies is even as big as the fusing crystalline phase, and the cooling of molten amorphous phase takes place fast, near being enough to that phase-change material is frozen in the amorphous phase.As a result, apply no longer produces observable electric current I with essentially identical the 6th potential pulse of first potential pulse when t=370ns.
The duration of each potential pulse is 10ns.The result of Fig. 2 A and 2B shows that electric device 1 according to the present invention can be from the amorphous phase transition to the crystalline phase and from the crystal transition to the amorphous phase, the maximum 10ns of fringe time, than the fast 3-5 of the fringe time of known electric device doubly.
Fig. 3 has compared the Dielectric Breakdown Character according to electric device 1 of the present invention and known electric device.For two kinds of devices, as the function measurement electric current I of applying voltage U.When measuring beginning, phase-change material is in amorphous phase.Apply the voltage of 0.1V to device, the result produces a little electric current I.Increase voltage subsequently and measure the corresponding electric current of each voltage.
In electric device 1 according to the present invention, greatly about U
BdPuncture during=0.45V, cause electric current obviously to increase.In known electric device, greatly about U
BdPuncture during=0.6V.The further increase of voltage U causes the linear increase of electric current I.For greater than puncture voltage U
BdVoltage U, corresponding differential resistance is expressed as R
BdResult shown in Figure 3 represents that electric device 1 according to the present invention has the puncture voltage littler than known electric device.
When the composition formula of phase-change material is Sb
aTe
bX
100-(a+b)The time, wherein a, b and 100-(a+b) represent atomic percent, satisfy 1≤a/b≤8 and 4≤100-(a+b)≤22, X is one or more elements that are selected from Ge, In, Ag, Ga, Zn, the crystallization rate of the phase-change material that uses in the electric device 1 can recently be regulated by changing Sb/Te, as shown in Figure 4.Crystallization rate is 1m/s or higher, and if the amount of Sb increase with respect to the amount of Te, the crystallization rate approximately linear increases.Phase-change material according to electric device 1 of the present invention comprises Sb and Te, and the Sb/Te ratio is greater than 1 and less than 8.Preferred this ratio is less than 4, because for bigger ratio, crystallization rate is approximately more than the 4.5m/s.Thereby, in many cases, can not obtain amorphous phase, because phase-change material before being cooled to below the crystallization temperature crystallization takes place.This phase-change material further comprises the element X of 4-22 atomic percent, and element X is selected from Ge, In, Ag, Ga and Zn.Element X can comprise one or more in these elements.Table 1 has provided the example of this class phase-change material.The crystallization rate of phase-change material and increases with the increase of Sb/Te ratio more than 1m/s, with element X choose and its concentration irrelevant.
Table 1: composition formula is Sb
aTe
bX
100-(a+b)Compare examples of material, wherein a, b and 100-(a+b) expression atomic percent satisfies 1≤a/b≤8 and 4≤100-(a+b)≤22, X is one or more elements that are selected from Ge, In, Ag, Ga, Zn.Ge, In, Ag and Ga represent to be included in these elements atomic percentage in this phase-change material, and Sb/Te represents the ratio of the atomic percent of Sb and Te.
When the composition formula of phase-change material is Sb
1-cM
c, when the wherein satisfied 0.05≤c of C≤0.61, and M comprised Ge, the crystallization rate of the phase-change material that uses in the electric device 1 can be regulated by changing Ge content, as shown in Figure 5.
As shown in table 2, the composition formula of phase-change material is Sb
1-cM
c, wherein C satisfies 0.05≤c≤0.61, and M is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Te, Zn and Sn, and its crystallization temperature is positioned at GeTe-Sb than composition usually
2Te
3Near the phase-change material line the high 50-100 of crystallization temperature ℃.
These material additional advantages are that high crystallization temperature is higher relatively, and the sheet resistance of crystalline phase is all temperature independent substantially up to 400 ℃.
Table 2: the crystallization temperature of the different phase-change materials of forming.
Phase-change material, composition formula are Sb
1-cM
c, wherein C satisfies 0.05≤c≤0.61, and M is one or more elements that are selected from Ge, In, Ag, Ga, Te, Zn and Sn, for Sb
85Ga
15And Sb
85Ge
15Two kinds of compositions have the sheet resistance shown in Fig. 6 A and 6B respectively, in case crystallization, sheet resistance changes at least two orders of magnitude.
Table 3: composition formula is Sb
1-cM
cThe example of phase-change material, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Zn and Sn.
In another embodiment, as shown in Figure 7, form electric device 100 in the main body 101 that comprises Semiconductor substrate 102, Semiconductor substrate 102 is similar to the substrate 10 among Fig. 1.It comprises N * M memory cell array, and this array is with identical from array that WO-A00/57498 learnt, especially referring to Fig. 4 of this application for patent.N and M are integers herein.Each memory cell comprises memory element 103 and selector separately 104 separately.In the embodiment shown in fig. 7, each memory cell comprises two independently memory element 103A and 103B.The first conductor 130A, the second conductor 270A, resistor 250 and layer 127A and 128 have constituted memory element 103A, and the first conductor 130B, the second conductor 270B, resistor 250 and layer 127B and 128 have constituted memory element 103B.In other words, memory element 103A and 103B common resistor 250 and with one deck 128.In another embodiment, do not express, layer 128 is removed, and layer 250 directly contacts with layer 260.Also have among the embodiment, also do not express, layer 127A and/or 127B are omitted.
Contact zone 132A and 132B are less than or equal to second contact zone 272A and the 272B respectively.The first contact zone 132A and 132B have characteristic size d separately.In one embodiment, the atomic percent a of Sb and Te and b are respectively less than d/3, and d unit is nm.For given a/b ratio, the minimum feature size that this means first contact zone 132 is d
Min, 1=6a/b, wherein d unit is nm.Provide the typical d of different a/b ratios in the table 4
Min, 1Value.
When amorphous volume exceeded first contact zone, the minimum feature size of first contact zone 132 can be loosened to d
Min, 2=3a/b, wherein d unit is nm.Representative value is also illustrated in the table 4.
Table 4: the minimum feature size of electric device 1, wherein phase-change material does not extend beyond first contact zone 132, and wherein it extends the twice of the characteristic length of approximate this contact zone.Under first kind of situation, minimum permission characteristic size is d
Min, 1, it is d under latter event
Min, 2
The first conductor 130A and 130B are electrically connected to first contact zone 132A and the 132B respectively.The second conductor 270A and 270B are electrically connected to second contact zone 272A and the 272B respectively.The first conductor 130A, the second conductor 270A and resistor 250 can conduction currents, and this electric current is used for heating phase-change material so that can from first to second change mutually, changes the resistance value of the first memory element 103A thus.Similarly, the first conductor 130B, the second conductor 270B and resistor 250 can conduction currents, and this electric current is used for heating phase-change material so that can from first to second change mutually, changes the resistance value of the second memory element 103B thus.
Embodiment is represented as shown in Figure 7, and dielectric materials layer 260 provides the electricity between resistor 250 and the output line 271 to isolate, thereby makes 250 of resistors be connected to output line 271 by the second conductor 270A and 270B.Dielectric layer 140 is isolated the first conductor 130A and first conductor 130B electricity.At the deposited on top dielectric layer 180 of electric device 100, this dielectric layer can comprise boron phosphorus silicate glass (BPSG).
Be similar to the electric device known to the WO-A 00/57498, the first conductor 130A and 130B are that the sidewall spacers of conduction is also referred to as conducting interval, and 126 side surface 126S forms along the dielectric regime for it.Contact zone between resistor 250 and the first conductor 130A and the 130B is respectively first contact zone 132A and the 132B.Therefore, between resistor 250 and the first conductor 130A and the 130B unique electric coupling respectively by all or part of of the first contact zone 132A and 132B.The remainder of the first conductor 130A and 130B by dielectric layer 126 and 140 with the isolation of resistor 250 electricity.
Alternatively, can be by the conformal deposition (conformally deposition) known to WO-A00/57498, one or more contact layers are deposited on the sidewall surfaces or surface of through hole, and formation is as first conductor 130A and/or the 130B of sidewall spacers.Through hole can be circular, square, rectangle or irregularly shaped.Conductive sidewall spacers also can form by the sidewall surfaces of the one or more contact layers of conformal deposition to post or platform.Its complementary space of through hole is filled with dielectric materials layer.
In electric device 100, as shown in Figure 7, the phase-change material of resistor 250 directly contacts with 128 with the crystallizing layer 127A, the 127B that have crystal structure respectively.Crystallizing layer has crystal structure.It can be conductor, semiconductor or dielectric.For example, it can comprise PbTe, Ag
2Te, CrTePb, Ge and Si.It has the thickness of 2-100nm.Crystallizing layer 127A directly contacts with 132B with the first contact zone 132A respectively with 127B.Crystallizing layer 128 directly contacts with 272B with the second contact zone 272A.Crystallizing layer 127B be conduction and the first contact zone 132B and the second contact zone 272B be electrically connected.Crystallizing layer 127B constitutes the electrical bypass that is arranged in parallel with phase-change material.
N-type doping source region 110 and drain region 112 are separated by channel region 114.Gate regions 118 forms on channel region 114, and its control 110 flows to the electric current in drain region 112 by channel region 114 from the source region.Gate regions 118 preferably comprises polysilicon layer.Gate regions 118 is separated by dielectric regime 116 and channel region 114.
In n-type doped drain 112, form raceway groove and stop to distinguish 113, produce two drain regions 112 adjacent, that electricity is isolated of different N MOS transistor.Usually, raceway groove stops to distinguish 113 and has the conduction type opposite with source and drain region 110,112.Shown in NMOS embodiment in, raceway groove stops to distinguish 113 and comprises p-type doped silicon.
What form on gate regions 118 is selection wire 120, and it preferably comprises tungsten silicide layer.Selection wire 120 is used to transmit the signal of telecommunication to gate regions 118.What form on selection wire 120 is dielectric regime 122, and it makes the adjacent domain electric insulation of selection wire 120 and electric device 100.The lamination of layer 116,118,120 is referred to as gate stack.On the sidewall surfaces of gate stack, form dielectric area 126.
The first conductor 130A and the 130B of memory element 103A and 103B are electrically connected to first district respectively, and first district is selected from the source region 110 and the drain region 112 of respective metal oxide semiconductor field effect transistor.In the embodiment of Fig. 2, first district is drain region 112.Second conductor 270 of each memory element 130A and 103B is electrically connected to output line 271, and it can comprise, for example and second conductor, 270 identical materials.Second district of respective metal oxide semiconductor field effect transistor is electrically connected to one of N first selection wire 190, and wherein second district is selected from source region 110 and drain region 112, and does not contact with first district.Gate regions 116 is electrically connected to one of M second selection wire 120.
In an alternative embodiment, electric device has disclosed structure in structure shown in any figure among the WO-A1-02/09206 or the description as WO-A1-02/09206.
Electric device according to the present invention is preferred for, and for example in the electric installation as computer, television receiver or mobile phone, these devices comprise and are used for for example processor of data processing, and memory and the coupling of described processor are used for stored information.Described electric installation further comprises the display that is coupled to output.
In a word, electric device 1,100 has the main body 2,101 that comprises resistor 7,250, and described resistor has the phase-change material that can change between first phase and second phase.The resistance of resistor 7,250 depends on that phase-change material is in first mutually or second phase.Resistor 7,250 can conduct the electric current that makes it possible to from first to the second phase phase transformation.Phase-change material is quick growth material, and its composition formula can be Sb
1-cM
c, wherein c satisfies 0.05≤c≤0.61, and M is selected from one or more elements that comprise in Ge, In, Ag, Ga, Te, Zn and the Sn group; Or composition formula can be Sb
aTe
bX
100-(a+b), wherein a, b and 100-(a+b) expression atomic percent satisfy 1≤a/b≤8 and 4≤100-(a+b)≤22, and X is one or more elements that are selected from Ge, In, Ag, Ga and Zn.
Should be noted that the foregoing description explanation and unqualified the present invention, those skilled in the art can design many alternatives and not depart from the scope of accessory claim.In the claims, to should not be construed be limitation of the invention to any reference marker in the round parentheses." comprise " that a speech do not get rid of the element outside listed element in the requirement of having the right or the step or the existence of step.The existence that a plurality of such elements are arranged do not got rid of in " one " speech before the element.
Claims (15)
1. electric device (1,100), its main body (2,101) has resistor (7,250), resistor (7,250) comprises the phase-change material that can change, resistor (7 between first phase and second phase, 250) resistance value depends on that it still is second phase mutually that phase-change material is in first, resistor (7,250) can conduct and make it possible to from first to second electric current that changes mutually, and this phase-change material is quick growth material, the wherein phase-change material of resistor (250) and crystallizing layer (127,128) directly contact, and crystallizing layer (127,128) has and the similar crystal structure of the crystal structure of phase-change material.
2. electric device as claimed in claim 1 (1,100), wherein phase-change material has the crystallization rate of 1m/s at least.
3. electric device as claimed in claim 1 (1,100), wherein the composition formula of phase-change material is Sb
1-cM
c, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Te, Zn and Sn.
4. electric device as claimed in claim 3 (1,100), wherein c satisfies 0.05≤c≤0.5.
5. electric device as claimed in claim 4 (1,100), wherein c satisfies 0.10≤c≤0.5.
6. electric device as claimed in claim 1 (1,100), wherein phase-change material does not contain Te substantially.
7. electric device as claimed in claim 3 (1,100), wherein phase-change material comprises Ge and/or the Ga that total concentration is the 5-35 atomic percent.
8. electric device as claimed in claim 3 (1,100), wherein to comprise total concentration be 5-30 atomic percent In and/or Sn to phase-change material.
9. electric device as claimed in claim 1 (1,100), wherein the composition formula of phase-change material is Sb
aTe
bX
100-(a+b), wherein a, b and 100-(a+b) expression atomic percent satisfy 1≤a/b≤8 and 4≤100-(a+b)≤22, and X is one or more elements that are selected from the group that comprises Ge, In, Ag, Ga, Zn and Sn.
10. electric device as claimed in claim 9 (1,100), wherein phase-change material comprises at least 10% and less than 22% Ge.
11. electric device (1 as claimed in claim 9,100), wherein resistor (7,250) have first contact zone (5,132) and second contact zone (6,272), first contact zone (132) is less than or equal to second contact zone (272), first contact zone has characteristic size d, and the unit of d is nm, and d is greater than 6a/b.
12. electric device as claimed in claim 11 (100), wherein crystallizing layer (127,128) directly contacts with first contact zone (132), and/or directly contacts with second contact zone (272).
13. electric device as claimed in claim 1 (100), wherein resistor (250), first conductor (130) that is electrically connected to resistor (250) and second conductor (270) constitute memory element (103), and main body (101) comprises:
Memory cell array, each memory cell comprise memory element (103) and selector separately (104) separately, and
Selection wire network (120,190),
Each memory element can be visited separately by the selection wire separately (120,190) that is connected to selector (104) separately.
14. electric device as claimed in claim 13 (100), wherein
Selector (104) comprises the mos field effect transistor of have the source region (110), drain region (112) and gate regions (116), and
The selection wire network comprises N first selection wire (190), M second selection wire (120) and output line (271), N and M are integer, and first conductor (130) of each memory element (103) is electrically connected to the source region (110) that is selected from the corresponding metal oxide semiconductor field effect transistor and first district of drain region (112); Second conductor (270) of each memory element (103) is electrically connected to output line (271); Second district of corresponding metal oxide semiconductor field effect transistor is electrically connected in N first selection wire (190), this second district is selected from source region (110) with drain region (112) and do not contact first district, and gate regions (116) is electrically connected in M second selection wire (120).
15. an electric installation, the display that comprises processor, is coupled to the memory of processor and is coupled to the processor output, wherein memory comprises electric device as claimed in claim 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02080430.8 | 2002-12-19 | ||
| EP02080430 | 2002-12-19 | ||
| EP03100583.8 | 2003-03-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1729583A CN1729583A (en) | 2006-02-01 |
| CN100521277C true CN100521277C (en) | 2009-07-29 |
Family
ID=35925192
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801071076A Expired - Fee Related CN100521277C (en) | 2002-12-19 | 2003-12-03 | Electric device comprising phase change material |
| CNB2003801064975A Expired - Fee Related CN100401547C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and metod of manufacturing the same |
| CNB2003801066260A Expired - Fee Related CN100533755C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and parallel heater |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801064975A Expired - Fee Related CN100401547C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and metod of manufacturing the same |
| CNB2003801066260A Expired - Fee Related CN100533755C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and parallel heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN100521277C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7800092B2 (en) * | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
| CN100461485C (en) * | 2007-01-17 | 2009-02-11 | 中国科学院上海微系统与信息技术研究所 | Current-limiting device based on sulfur series compound phase-change material and method for making the same |
| WO2008120126A1 (en) | 2007-03-30 | 2008-10-09 | Nxp B.V. | An electronic device, and a method of operating an electronic device |
| US8470635B2 (en) * | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
| CN101807665B (en) * | 2010-03-04 | 2012-07-25 | 同济大学 | Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material |
| CN102544355B (en) * | 2010-12-09 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof |
| CN102227015B (en) * | 2011-05-24 | 2015-07-01 | 中国科学院上海微系统与信息技术研究所 | Phase transition storage material and preparation method thereof |
| CN102339951B (en) * | 2011-06-15 | 2016-01-20 | 中国科学院上海微系统与信息技术研究所 | A kind of DRAM phase-change memory cell and the phase transition storage for alternative DRAM |
| GB2515568B (en) | 2013-06-28 | 2016-05-18 | Ibm | Resistive random-access memory cells |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
| US5534712A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
| US5933365A (en) * | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
| CA2367365A1 (en) * | 1999-03-25 | 2000-09-28 | Stanford R. Ovshinsky | Electrically programmable memory element with improved contacts |
| US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
-
2003
- 2003-12-03 CN CNB2003801071076A patent/CN100521277C/en not_active Expired - Fee Related
- 2003-12-05 CN CNB2003801064975A patent/CN100401547C/en not_active Expired - Fee Related
- 2003-12-05 CN CNB2003801066260A patent/CN100533755C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| Chalcogenide-Based Non-Volatile Memory Technology. JON，MAIMON，ET，AL.2001 IEEE AEROSPACE CONFERENCE PROGEEDINGS，第5卷. 2001 |
| Crystallization kinetics of sputter-deposited amorphousAgInSbTe films. Walter K.Njoroge et al.JOURNAL OF APPLIED PHYSICS,Vol.90 No.8. 2001 |
| High Performance Media for Phase Change OpticalRecording. Guo-Fu Zhou et al.Japanese Journal of Applied Physics,Vol.38 No.part1 3B. 1999 |
| Phase-Change Media for High-Numerical-Aperture andBlue-Wavelength Recording. Herman J.Borg ET AL.JAPANESE JOURNAL OF APPLIED PHYSICS,Vol.40 No.PART1 3B. 2001 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1729575A (en) | 2006-02-01 |
| CN1726602A (en) | 2006-01-25 |
| CN100533755C (en) | 2009-08-26 |
| CN1729583A (en) | 2006-02-01 |
| CN100401547C (en) | 2008-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1576676B1 (en) | Electric device comprising phase change material | |
| US7817464B2 (en) | Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same | |
| EP1878064B1 (en) | Method and structure for peltier-controlled phase change memory | |
| CN100557812C (en) | Phase change random access memory devices and method of operation thereof | |
| US7217945B2 (en) | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby | |
| CN100594613C (en) | Electric device comprising phase change material | |
| US7692959B2 (en) | Multilayer storage class memory using externally heated phase change material | |
| US6429064B1 (en) | Reduced contact area of sidewall conductor | |
| US7254059B2 (en) | Multilevel phase-change memory element and operating method | |
| JP4860249B2 (en) | Phase change memory device and method of manufacturing phase change memory device | |
| CN100470823C (en) | Semiconductor memorizer | |
| US20060034116A1 (en) | Cross point array cell with series connected semiconductor diode and phase change storage media | |
| US20100163830A1 (en) | Phase-change random access memory capable of reducing thermal budget and method of manufacturing the same | |
| CN100521277C (en) | Electric device comprising phase change material | |
| US7608851B2 (en) | Switch array circuit and system using programmable via structures with phase change materials | |
| TW201117367A (en) | Semiconductor memory device and manufacturing method thereof | |
| US8232160B2 (en) | Phase change memory device and method of manufacturing the same | |
| KR100603558B1 (en) | Single level metal memory cell using chalcogenide cladding | |
| EP3069350A1 (en) | Circuit and system of using junction diode as program selector for one-time programmable devices | |
| KR20090036006A (en) | Method for manufacturing phase-change random access memory device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: III HOLDINGS 6, LLC Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20150901 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150901 Address after: Delaware Patentee after: III Holdings 6 LLC Address before: Holland Ian Deho Finn Patentee before: NXP B.V. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090729 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |