CN100524667C - 分段场效应晶体管的制造方法 - Google Patents
分段场效应晶体管的制造方法 Download PDFInfo
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- CN100524667C CN100524667C CNB2007101092000A CN200710109200A CN100524667C CN 100524667 C CN100524667 C CN 100524667C CN B2007101092000 A CNB2007101092000 A CN B2007101092000A CN 200710109200 A CN200710109200 A CN 200710109200A CN 100524667 C CN100524667 C CN 100524667C
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- 238000000034 method Methods 0.000 title claims description 31
- 230000005669 field effect Effects 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 73
- 230000011218 segmentation Effects 0.000 description 38
- 238000005516 engineering process Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/732,322 | 2003-12-10 | ||
US10/732,322 US7388258B2 (en) | 2003-12-10 | 2003-12-10 | Sectional field effect devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100901358A Division CN100382331C (zh) | 2003-12-10 | 2004-11-02 | 分段场效应晶体管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101079381A CN101079381A (zh) | 2007-11-28 |
CN100524667C true CN100524667C (zh) | 2009-08-05 |
Family
ID=34652851
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101092000A Active CN100524667C (zh) | 2003-12-10 | 2004-11-02 | 分段场效应晶体管的制造方法 |
CNB2004100901358A Active CN100382331C (zh) | 2003-12-10 | 2004-11-02 | 分段场效应晶体管及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100901358A Active CN100382331C (zh) | 2003-12-10 | 2004-11-02 | 分段场效应晶体管及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7388258B2 (zh) |
JP (1) | JP4549829B2 (zh) |
KR (1) | KR100627955B1 (zh) |
CN (2) | CN100524667C (zh) |
TW (1) | TWI318795B (zh) |
Families Citing this family (55)
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US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7049662B2 (en) * | 2003-11-26 | 2006-05-23 | International Business Machines Corporation | Structure and method to fabricate FinFET devices |
US7624192B2 (en) * | 2003-12-30 | 2009-11-24 | Microsoft Corporation | Framework for user interaction with multiple network devices |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US7268058B2 (en) * | 2004-01-16 | 2007-09-11 | Intel Corporation | Tri-gate transistors and methods to fabricate same |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US7042009B2 (en) * | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7071064B2 (en) * | 2004-09-23 | 2006-07-04 | Intel Corporation | U-gate transistors and methods of fabrication |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US7361958B2 (en) * | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7193279B2 (en) | 2005-01-18 | 2007-03-20 | Intel Corporation | Non-planar MOS structure with a strained channel region |
KR100585178B1 (ko) * | 2005-02-05 | 2006-05-30 | 삼성전자주식회사 | 금속 게이트 전극을 가지는 FinFET을 포함하는반도체 소자 및 그 제조방법 |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060202266A1 (en) | 2005-03-14 | 2006-09-14 | Marko Radosavljevic | Field effect transistor with metal source/drain regions |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) * | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US20070090416A1 (en) * | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
JP2009510720A (ja) * | 2005-09-28 | 2009-03-12 | エヌエックスピー ビー ヴィ | フィン型fetに基づく不揮発性メモリ装置 |
US8513066B2 (en) * | 2005-10-25 | 2013-08-20 | Freescale Semiconductor, Inc. | Method of making an inverted-T channel transistor |
US7452768B2 (en) | 2005-10-25 | 2008-11-18 | Freescale Semiconductor, Inc. | Multiple device types including an inverted-T channel transistor and method therefor |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
JP2007173326A (ja) * | 2005-12-19 | 2007-07-05 | Korea Advanced Inst Of Sci Technol | シリコンフィンとシリコンボディとからなるチャネルを有する電界効果トランジスタおよびその製造方法 |
US7396711B2 (en) * | 2005-12-27 | 2008-07-08 | Intel Corporation | Method of fabricating a multi-cornered film |
US7282772B2 (en) * | 2006-01-11 | 2007-10-16 | International Business Machines Corporation | Low-capacitance contact for long gate-length devices with small contacted pitch |
US7449373B2 (en) * | 2006-03-31 | 2008-11-11 | Intel Corporation | Method of ion implanting for tri-gate devices |
KR100756809B1 (ko) * | 2006-04-28 | 2007-09-07 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
US7517764B2 (en) * | 2006-06-29 | 2009-04-14 | International Business Machines Corporation | Bulk FinFET device |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
KR100954116B1 (ko) * | 2006-11-06 | 2010-04-23 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스패턴 형성방법 |
JP4455632B2 (ja) * | 2007-09-10 | 2010-04-21 | 株式会社東芝 | 半導体装置 |
US20090108353A1 (en) * | 2007-10-31 | 2009-04-30 | Advanced Micro Devices, Inc. | Finfet structure and methods |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US8207038B2 (en) * | 2010-05-24 | 2012-06-26 | International Business Machines Corporation | Stressed Fin-FET devices with low contact resistance |
US20110291188A1 (en) * | 2010-05-25 | 2011-12-01 | International Business Machines Corporation | Strained finfet |
US8389416B2 (en) * | 2010-11-22 | 2013-03-05 | Tokyo Electron Limited | Process for etching silicon with selectivity to silicon-germanium |
US8726220B2 (en) * | 2011-04-29 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and methods for converting planar design to FinFET design |
US8692291B2 (en) | 2012-03-27 | 2014-04-08 | International Business Machines Corporation | Passive devices for FinFET integrated circuit technologies |
CN103426755B (zh) * | 2012-05-14 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US8956932B2 (en) | 2013-02-25 | 2015-02-17 | International Business Machines Corporation | U-shaped semiconductor structure |
CN104795330B (zh) * | 2014-01-20 | 2018-09-04 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN104701184A (zh) * | 2015-03-20 | 2015-06-10 | 上海华力微电子有限公司 | 形成多鳍结构场发射晶体管的方法 |
US9293374B1 (en) | 2015-06-12 | 2016-03-22 | International Business Machines Corporation | Self-aligned low defect segmented III-V finFET |
CN109087865A (zh) * | 2017-06-14 | 2018-12-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN109285889B (zh) * | 2017-07-20 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN109285876B (zh) * | 2017-07-20 | 2021-08-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
KR102532118B1 (ko) | 2018-03-20 | 2023-05-11 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
JP7464554B2 (ja) | 2021-03-12 | 2024-04-09 | 株式会社東芝 | 高周波トランジスタ |
Citations (4)
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US5136350A (en) * | 1989-09-28 | 1992-08-04 | Oki Electric Industry Co., Ltd. | Semiconductor mosfet having a projecting T-shaped portion |
US5225701A (en) * | 1989-12-15 | 1993-07-06 | Mitsubishi Denki Kabushiki Kaisha | Vertical silicon-on-insulator (SOI) MOS type field effect transistor |
CN1349249A (zh) * | 2000-10-18 | 2002-05-15 | 国际商业机器公司 | 制造半导体侧壁翼片的方法 |
US6562665B1 (en) * | 2000-10-16 | 2003-05-13 | Advanced Micro Devices, Inc. | Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology |
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JP2571004B2 (ja) | 1993-12-22 | 1997-01-16 | 日本電気株式会社 | 薄膜トランジスタ |
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-
2003
- 2003-12-10 US US10/732,322 patent/US7388258B2/en not_active Expired - Lifetime
-
2004
- 2004-11-02 CN CNB2007101092000A patent/CN100524667C/zh active Active
- 2004-11-02 CN CNB2004100901358A patent/CN100382331C/zh active Active
- 2004-11-10 KR KR1020040091550A patent/KR100627955B1/ko not_active IP Right Cessation
- 2004-11-12 TW TW093134801A patent/TWI318795B/zh active
- 2004-12-07 JP JP2004353555A patent/JP4549829B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-13 US US11/433,806 patent/US7413941B2/en active Active
-
2008
- 2008-06-20 US US12/142,849 patent/US7659153B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136350A (en) * | 1989-09-28 | 1992-08-04 | Oki Electric Industry Co., Ltd. | Semiconductor mosfet having a projecting T-shaped portion |
US5225701A (en) * | 1989-12-15 | 1993-07-06 | Mitsubishi Denki Kabushiki Kaisha | Vertical silicon-on-insulator (SOI) MOS type field effect transistor |
US6562665B1 (en) * | 2000-10-16 | 2003-05-13 | Advanced Micro Devices, Inc. | Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology |
CN1349249A (zh) * | 2000-10-18 | 2002-05-15 | 国际商业机器公司 | 制造半导体侧壁翼片的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100627955B1 (ko) | 2006-09-25 |
US20080254577A1 (en) | 2008-10-16 |
CN100382331C (zh) | 2008-04-16 |
TW200520222A (en) | 2005-06-16 |
US7413941B2 (en) | 2008-08-19 |
JP2005175481A (ja) | 2005-06-30 |
TWI318795B (en) | 2009-12-21 |
US7659153B2 (en) | 2010-02-09 |
US20050127362A1 (en) | 2005-06-16 |
KR20050056858A (ko) | 2005-06-16 |
US20060240607A1 (en) | 2006-10-26 |
CN101079381A (zh) | 2007-11-28 |
US7388258B2 (en) | 2008-06-17 |
JP4549829B2 (ja) | 2010-09-22 |
CN1627531A (zh) | 2005-06-15 |
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