CN100524692C - 在衬底上形成金属互连的方法 - Google Patents

在衬底上形成金属互连的方法 Download PDF

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CN100524692C
CN100524692C CNB2007101017141A CN200710101714A CN100524692C CN 100524692 C CN100524692 C CN 100524692C CN B2007101017141 A CNB2007101017141 A CN B2007101017141A CN 200710101714 A CN200710101714 A CN 200710101714A CN 100524692 C CN100524692 C CN 100524692C
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layer
metal
pulse
barrier layer
copper
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CN101174577A (zh
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陈岭
仲华
肖恩·M·瑟特尔
迈克尔·X·杨
奚明
文森特·库
吴典晔
艾伦·乌业
诺曼·纳卡希玛
巴里·金
张弘
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Applied Materials Inc
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Abstract

本发明提供了一种用于在衬底上形成金属互连的方法。一方面，本方法包括沉积含难熔金属的阻挡层，所述阻挡层的厚度小于2nm使得其呈现类晶体结构，并足以抑制至少一部分金属层上的原子迁移；通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分阻挡层上沉积晶种层；并在至少一部分晶种层上沉积第二金属层来生成互连。

Description

在衬底上形成金属互连的方法
本申请是中国发明专利申请No.02821269.X(国际申请号：PCT/US02/34277，国际申请日：2002年10月25日)的分案申请。
技术领域
本发明的实施例涉及用于制备集成电路器件的方法。更具体地，本发明的实施例涉及利用一个或多个循环沉积工艺来形成金属互连结构。
背景技术
由于集成电路(IC)器件的结构尺寸按比例降至亚1/4微米的范围，所以电阻和电流密度已成为急需考虑并改善的因素。多层互连结构提供了贯穿IC器件的导电路径，其中的IC器件被形成在高宽比(aspect ratio)较高的构造(feature)中，包括接头、插塞、通孔、线(line)、导线和其他构造。在衬底(substrate)上形成互连的典型方法包括沉积一层或多层，蚀刻其中的至少一层来形成一个或多个构造，在构造中沉积阻挡层，并沉积一层或多层来填满构造。通常，构造在设置于下层导电层和上层导电层之间的介电层内形成。互连在构造内形成以连接上层导电层和下层导电层。可靠地形成这些互连构造对电路的生成，以及单个衬底和模片(die)上的电路密度和质量的提高是重要的。
近来，由于铜及其合金的电阻率小于铝，所以铜已成为填充亚微米、高宽比较高的互连构造的首选金属。但是，铜更容易扩散进周围的材料内，并能改变相邻层的电子器件特性(例如形成层间的导电路径)，从而降低了整个电路的可靠性，并可能导致器件损坏。
因此，在铜金属化之前沉积阻挡层来防止或阻碍铜原子的扩散。阻挡层通常含有难熔金属，例如钨、钛、钽及其氮化物，所有这些材料的电阻率都大于铜。为在构造内沉积阻挡层，阻挡层必须沉积在构造的底面及其侧壁上。因此，构造底部上的阻挡层的附加量不仅增加了构造的总电阻，而且成为多层互连结构的上层金属互连和下层金属互连之间的障碍。
因此，需要一种使互连的电阻最小的形成金属互连结构的改进方法。
发明内容
本发明提供了一种用于在衬底上形成金属互连的方法。一方面，本方法包括沉积含难熔金属的阻挡层，所述阻挡层的厚度呈现类晶体结构，并足以抑制至少一部分金属层上的原子迁移。通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分阻挡层上沉积晶种层，并在至少一部分晶种层上沉积第二金属层来生成互连。
另一方面，本方法包括在衬底表面上沉积第一金属层；通过交替地引入一次或多次含钛化合物的脉冲、一次或多次含硅化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积厚度小于约20埃的钛硅氮化物层；沉积双合金晶种层，并在至少一部分双合金晶种层上沉积第二金属层。
另一方面，本方法还包括在至少一部分金属层上沉积厚度小于约20埃的双层阻挡，沉积双合金晶种层，并在至少一部分双合金晶种层上沉积第二金属层。双层阻挡包括通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲而沉积的第一氮化钽层和第二α相钽层。
另一方面，本方法包括在衬底表面上沉积第一金属层；通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积厚度小于约20埃的氮化钽阻挡层；沉积双合金晶种层，其包括铜和选自铝、镁、钛、锆、锡及其组合的金属；并在至少一部分双合金晶种层上沉积第二金属层。
附图说明
为能详细地获悉并理解本发明的上述特征，可参照在附图中所说明的其实施例，从而对以上简短概括的本发明进行更具体的描述。但是，应该注意附图仅说明了本发明的典型实施例，因此不应认为是限制其范围，因为本发明包括其他等效的实施例。
图1图示了根据这里所描述的各种实施例的处理工艺顺序。
图2A-2D是根据这里所描述的实施例的互连制备的不同阶段的示例性晶片的示意性横截面视图。
图3图示了根据这里所描述循环沉积技术用来形成薄阻挡层的示例性处理室200的示意性部分横截面。
图4图示了适于进行这里所描述的互连制备顺序的示例性集束工具的示意性平面图。
图5是其中具有根据这里所描述的沉积技术而沉积的氮化钛阻挡层的构造的透射电子显微镜(TEM)图像。
图6是表示多层互连结构的部分横截面视图的TEM图像。
具体实施方式
本发明提供了形成一个或多个互连结构的工艺过程序列。与现有技术的互连相比较，根据这里所描述的实施例而形成的互连结构具有更低的总电阻率和更好的电性能，尤其适用于制造存储器以及集成电路制备中用到的逻辑结构。所述互连结构的形成包括至少部分沉积在底层(underlying)金属层上的薄阻挡层、至少部分沉积在所述阻挡层上的晶种层、以及至少部分沉积在所述晶种层上的本体金属层的形成。这里所用的术语“互连”指集成电路内形成的任意导电路径。这里所用的术语“本体金属(bulkmetal)”指相对于用来形成互连结构所沉积的其他金属，这里沉积的金属量更大。
图1图示了根据本发明的实施例的工艺流程顺序。首先，例如如步骤480所示，薄阻挡层至少部分沉积在底层衬底表面上，例如下层金属互连或金属栅。根据这里所描述的循环层沉积技术进行阻挡层沉积，以便提供优异的阻挡性能，并允许底层金属层持续生长穿过阻挡层而进入上层金属互连或随后沉积的金属层内。一方面，阻挡层是含难熔金属层，例如钽、钛和钨，并且可包括难熔金属氮化物材料，例如氮化钽(TaN)。另一方面，阻挡层是TaN和α相钽的薄双层。另一方面，阻挡层还可以是由含难熔金属的化合物、含硅化合物和含氮化合物而形成的三元材料。阻挡层也可作为后续的金属化过程的润湿层、粘合层或胶层。
这里所用的“薄层”指沉积在衬底表面上的材料层，厚度约20埃或更少，例如约10A。阻挡层的厚度如此薄以致相邻的金属互连的电子能够隧穿过阻挡层。因此，阻挡层通过降低总电阻率，提供优良的器件可靠性从而显著提高了金属互连的电性能。
根据这里所述的循环沉积方法而沉积的薄阻挡层显示出外延生长的现象。换句话说，阻挡层呈现与底层相同或基本相同的结晶特性。结果，生长出的基本是单晶，使得阻挡层和底层之间的界面没有空隙形成。同样，随后沉积在阻挡层上的金属层呈现相同或基本相同的外延生长特性，即继续形成单晶。因此，在这个界面处没有生成空隙。所得的类似单晶的结构消除了空隙的形成，从而显著增加了器件的可靠性。单晶结构在仍能提供优异的阻挡性能的同时，还减小了互连的总电阻。而且，我们相信由于互连材料界面上相似且均匀的晶体取向，单晶的生长减小了对电迁移和应力迁移的敏感度。
这里所用的“循环沉积”指连续地引入两种或多种反应性化合物以在衬底表面上沉积出单层材料。这两种或多种反应性化合物是交替地引入处理室的反应区的。通过时间延迟来分开各种反应性化合物，以使每种化合物粘附在衬底表面上并/或在衬底表面上反应。一方面，第一前体或化合物A被脉冲输入反应区内后，进行第一时间延迟。接着，第二前体或化合物B被脉冲输入反应区内后，进行第二时间延迟。如果例如钛硅氮化物的三元材料是所期望的，则例如第三化合物(C)被定量/脉冲输入反应区内后，进行第三时间延迟。在每次时间延迟期间，例如氩气的惰性气体被引入处理室内，来清洗反应区或去除反应区的任意残留反应性化合物。或者，清洗气在整个沉积过程中可连续地流动，使得在反应性化合物脉冲输入之间的时间延迟期间仅有清洗气流动。反应性化合物被交替地脉冲输入，直至在衬底表面上形成所期望的膜或膜层厚度。
这里所用的“衬底表面”指在其上进行膜处理的任意衬底表面。例如，取决于应用，衬底表面可包括硅、硅氧化物、掺杂硅、锗、砷化镓、玻璃、蓝宝石和例如金属、金属氮化物、金属合金和其他导电材料的任意其他材料。衬底表面还可包括例如二氧化硅和碳掺杂硅氧化物的介电材料。
这里所用的“脉冲输入”或“定量输入”意指一定量的特定化合物被间歇地或非连续地引入处理室的反应区内。取决于脉冲的持续时间，每次脉冲内的特定化合物的量可随时间变化。每次脉冲的持续时间是可变的，这取决于许多因素，例如所用的处理室的体积容量、耦合到所述处理室的真空系统及特定化合物本身的挥发性/反应性。
术语“化合物”意在包括一种或多种前体、氧化剂、还原剂、反应物和催化剂，及其组合。术语“化合物”也意在包括一组化合物，例如当两种或多种化合物同时被引入处理装置时。例如，一组化合物可包括一种或多种催化剂，以及一种或多种前体。术语“化合物”还意在包括例如通过解离或离子化而呈活化态或激发态的一种或多种前体、氧化剂、还原剂、反应物、和催化剂，或其组合。
我们相信在衬底表面上物理吸附、吸附、吸收或化学吸附单层反应物所用的表面吸引力是自限式的，这是因为由于衬底表面具有有限个反应物可利用的位点，所以在给定脉冲期间仅有一个单层被沉积在衬底表面上。一旦有限个位点被反应物占据，则反应物的进一步沉积将受阻。可重复这个循环来达到所期望厚度的层。
仍参照图1，如步骤485所示的，晶种层至少部分沉积在阻挡层上。可利用任意传统沉积技术，例如化学气相沉积(CVD)、物理气相沉积(PVD)、电镀、或无电镀来沉积晶种层。优选地，晶种层保形地(conformally)沉积在底层阻挡层上，所形成的厚度在约100A-500A之间。一方面，晶种层是传统的铜晶种层。另一方面，晶种层是双合金晶种层。示例性的双合金晶种层包括：1)利用含有未掺杂的铜的目标材料而沉积的未掺杂的铜，2)利用含有约2.0原子百分比的铝的铜-铝目标材料而沉积的含有约2.0原子百分比的铝的铜合金，3)利用含有约2.0原子百分比的锡的铜-锡目标材料而沉积的含有约2.0原子百分比的锡的铜合金，及4)利用含有约2.0原子百分比的锆的铜-锆目标材料而沉积的含有约2.0原子百分比的锆的铜合金。
如步骤487所示的，本体金属层至少被部分沉积在晶种层上。也可利用任意传统沉积技术，例如化学气相沉积(CVD)、物理气相沉积(PVD)、电镀、或无电镀来沉积金属层。金属层优选包括任意导电材料，例如铝、铜、钨或其组合。
图2A-2D是在制备的不同阶段的示例性互连结构的示意图。图2A示出了其上形成有介电层112的底层金属层110。图2B示出了至少部分沉积在底层金属层110上的阻挡层130。底层金属层110可含有任意导电金属，例如铝、铜、钨或其组合，并且可形成为互连构造的一部分，例如插塞、通孔、接头、线、导线，而且还可作为金属栅电极的一部分。图2C示出了至少部分沉积在阻挡层130上的晶种层140，且图2D示出了至少部分沉积在晶种层140上的本体金属层142。
参照图2A，介电层112可以是任意介电材料，包括无论是目前已知的或是将要被发现的低介电常数的介电材料(k≤4.0)。例如，介电层112可以是硅的氧化物或碳掺杂的硅氧化物。利用传统的公知技术，介电层112已被蚀刻来形成其中的构造114。构造114可以是插塞、通孔、接头、线、导线、或任意其他互连元件。一般地，构造114具有垂直的侧壁116和底面118，其高宽比约4：1或更大，例如约6：1。底面118暴露出下层金属互连110的至少一部分。
参照图2B，阻挡层130保形地沉积在构造114的底面118及侧壁116上。优选地，通过向其内设置有衬底的反应区以约100sccm-1000sccm的流速在约1.0秒或更短的时段内提供一个或多个含钽化合物的脉冲，并以约100sccm-1000sccm的流速在约1.0秒或更短的时段内提供一个或多个含氮化合物的脉冲，阻挡层含有沉积厚度约20A或更薄的氮化钽，优选约10A。示例性含钽化合物包括：t-丁基亚氨基-三(二乙基氨基)钽(TBTDET)；五(乙基甲基氨基)钽(PEMAT)；五(二甲基氨基)钽(PDMAT)；五(二乙基氨基)钽(PDEAT)；t-丁基亚氨基-三(二乙基甲基氨基)钽(TBTMET)；t-丁基亚氨基-三(二甲基氨基)钽(TBTDMT)；二(环戊二烯基)钽化三氢((Cp)2TaH3)；二(甲基环戊二烯基)钽化三氢((CpMe)2TaH3)；其衍生物；及其组合。示例性含氮化合物包括：氨；肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷(azoisobutane)；叠氮基乙烷；其衍生物；及其组合。
应该理解，这些化合物或任意其他以上未列出的化合物在室温下可以是固体、液体或气体。例如，PDMAT在室温下是固体，而TBTDET在室温下是液体。因此，在引入处理室之前，非气相前体要经过升华或蒸发步骤，而这都是本领域公知的。如本领域公知的，例如氩气、氦气、氮气、氢气或其混合物的载气也可用来帮助将化合物输入处理室内。
按顺序进行每个脉冲输入，并伴随着速度在约200sccm-1000sccm之间的单独的非反应性气体流。单独的非反应性气体流可在每个反应性化合物的脉冲输入之间脉冲地输入，或者可在整个沉积过程中连续地引入单独的非反应性气体流。无论是脉冲的还是连续的，单独的非反应性气体流起到去除反应区的任意多余反应物的作用，从而防止反应性化合物进行不需要的气相反应，并且也起到去除处理室的任意反应副产物的作用，类似于清洗气。除了这些作用，连续的非反应性气体的单独流动帮助将反应性化合物脉冲地传输到衬底表面，类似于载气。这里所用的术语“非反应性气体”指不会参与金属层形成的一种气体或气体混合物。示例性的非反应性气体包括氩气、氦气、氮气、氢气或其组合。
“反应区”意在包括与正在被处理的衬底表面流体连接的任意空间。反应区可包括在气源和衬底表面之间的处理室内的任意空间。例如，反应区包括衬底设置在其中的定量阀下游的任意空间。
每次脉冲输入/定量输入的持续时间是可变的，并可被调节，例如可借此来适应处理室的体积容量及与其耦合的真空系统的容量。此外，化合物的定量输入时间可根据化合物的流速、化合物的压力、化合物的温度、定量阀的类型、所用控制装置的类型、及化合物在衬底表面上的吸附能力而变化。定量输入时间也可基于正被形成的层的类型和正被形成的器件的几何结构而变化。
一般地，每次脉冲输入的持续时间或“定量输入时间”一般为1.0秒或更少。但是，定量输入时间可在几微秒到几毫秒，到几秒，甚至到几分钟的范围内。一般，定量输入时间应足够长，从而为一定体积的化合物提供充足的时间吸附/化学吸附到衬底的整个表面上，并在其上形成化合物层。
图3图示了示例性处理室200的示意性部分横截面，该处理室能够利用循环层沉积、原子层沉积、数字化学气相沉积和快速化学气相沉积技术来形成阻挡层。术语“循环层沉积”、“原子层沉积”、“数字化学气相沉积”和“快速化学气相沉积”这里可互相交换地使用，指气相沉积技术，通过该技术两种或多种化合物被按顺序引入处理室的反应区内，并在衬底表面上沉积出薄层材料。这种处理室200可从位于加利福尼亚的圣克拉拉的应用材料公司获得，其简短说明如下。更详细的说明可在2001年12月21日提交的题为“Gas Delivery Apparatus and Method For AtomicLayer Deposition”的共同受让的美国专利申请No.10/032,284中找到，作为参考资料这里引用了其内容。
处理室200可被集成进集成处理平台内，例如也可从应用材料公司获得的EnduraTM平台。EnduraTM平台的细节在1999年11月30日提交的题为“Integrated Modular Processing Platform”的共同受让的美国专利申请No.09/451,628中有描述，作为参考资料这里引用了其内容。
参照图3，室200包括室体202和设置在其内的衬底支架212，室体202具有在其侧壁204中形成的条阀208。衬底支架212安装在提升电机214上，来升高和降低衬底支架212及设置在其上的衬底210。衬底支架212也可包括在处理过程中用来将衬底210固定在衬底支架212上的真空吸盘、静电吸盘、或夹持环。而且，可利用嵌入的加热元件，例如电阻加热器来加热衬底支架212，或可利用例如设置在衬底支架212上的加热灯的辐射热来加热衬底支架212。清洗环222可设置在衬底支架212上，从而限定出清洗通道224，其提供清洗气以防止在衬底210的周边部分上的沉积。
输气装置230设置在室体202的上部，用来向室200提供气，例如处理气和/或清洗气。真空装置278与抽吸通道279相连，用来抽空室200中的气体，并帮助维持室200的抽吸区266内所期望的压力或所期望的压力范围。
输气装置230包括室盖232，其具有在其中间部分内形成的膨胀通道234。室盖232还包括从膨胀通道234延伸到室盖232的周边部分的底面260。底面260的大小和形状可充分地覆盖设置在衬底支架212上的衬底210。膨胀通道234的内径从上部237向邻近室盖232的底面260的下部235逐渐增加。随着气体流过膨胀通道234，由于气体的膨胀，通过它流动的气体速度会减小。减小的气速降低了吹走吸附在衬底210的表面上的反应物的可能性。
输气装置230还包括至少两个具有一个或多个端口的高速启动阀242。至少一个阀242是每种反应性化合物专用的。例如，第一阀是含难熔金属的化合物专用的，例如钽和钛，而第二阀是含氮化合物专用的。如果希望三元材料，则第三阀是另一种化合物专用的。例如，如果硅化物是所期望的，则另一种化合物可以是含硅的化合物。
阀242可以是任意能够精确并重复地将短脉冲的化合物输入室体202内的阀。在某些情况下，阀242的开/关循环周期或脉冲可约为100毫秒或更短。阀242可由系统计算机直接控制，例如大型机，或由面向特定的室/应用的专用控制器来控制，例如在2001年3月7日提交的题为“ValveControl System For ALD Chamber”的共同待审的美国专利申请No.09/800,881中详细描述的可编程逻辑计算机(PLC)，作为参考资料这里引用了其内容。例如，阀242可以是电控(EC)阀，如日本Fujikin公司市售的部件号为FR-21-6.35UGF-APD的阀。
为方便控制并自动操作整个装置，集成处理装置可包括含有中央处理单元(CPU)142、存储器144和支持电路146的控制器140。CPU 142可以是一种任意形式的计算机处理器，其用在工业环境中来控制各种传动和压力。存储器144与CPU 142连接，可以是一种或多种容易获得的存储器，例如随机访问存储器(RAM)、只读存储器(ROM)、软盘、硬盘、或任意其他形式的数字存储器、本地或远程存储器。软件指令和数据可被编码，并存储在存储器144内，用来指示CPU 142。支持电路146也与CPU 142连接，用来以传统方式支持处理器142。支持电路146可包括缓存、电源、时钟电路、输入/输出电路、子系统等。
在具体实施例中，通过向衬底表面循环地引入PDMAT和氨而形成TaN阻挡层。为开始TaN层的循环沉积，例如氩气的载气/惰性气体被引入处理室200内以稳定其压力和温度。在沉积过程中允许载气连续地流动，使得仅有氩气在每种化合物的脉冲输入之间流动。在室内温度和压力已分别稳定在约200℃-300℃和约1Torr-5Torr之后，由气源238以约100sccm-400sccm的流速，脉冲时间约为0.6秒或更短来提供PDMAT的第一脉冲输入。然后由气源239以约200sccm-600sccm的流速，脉冲时间约为0.6秒或更短来提供氨的脉冲输入。
PDMAT和氨的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。在各个方面，脉冲输入之间的时间减少至少提供了更高的处理量。结果，脉冲输入氨之后也暂停约1.0秒或更短，约0.5秒或更短，或者约0.1秒或更短。气源240通过各个阀242连续地提供在约100sccm-1000sccm之间流动的氩气，例如约100sccm-400sccm。一方面，当氨的脉冲进入时，PDMAT的脉冲可能仍在室内。一般，载气和/或抽吸排空的持续时间应足够长以防止在反应区中PDMAT和氨的脉冲混合在一起。
室压约1.0-5.0Torr时，加热器的温度维持在约100℃-300℃。优选地，沉积温度在约200℃-250℃之间。由PDMAT的脉冲输入、暂停、氨的脉冲输入和暂停组成的每个循环周期提供了每循环厚度在约0.3A-1.0A之间的钽氮化物层。可重复这个交替的顺序，直至达到所期望的厚度，即少于约20A，例如约10A。因此，该沉积方法需要10-70个循环周期，更具体地是20-30个循环周期。
另一方面，通过提供一个或多个含难熔金属的化合物的脉冲输入、一个或多个含氮化合物的脉冲输入及一个或多个含硅化合物的脉冲输入，沉积出厚度小于约20A(例如10A)的三元阻挡层。调节每次脉冲以提供所期望的组成、含硅量、厚度、密度和难熔金属-硅的氮化物层的阶梯覆盖(step coverage)。这里所用的“三元阻挡层”指包括三种主要元素的组合物的材料，例如钛、氮和硅。示例性的“三元阻挡层”也可包括钽、氮和硅。
在上述相同的工艺条件下，按顺序进行每次脉冲输入，并伴随有单独的载气/惰性气体流。单独的载气/惰性气体流可在每次反应性化合物的脉冲输入之间脉冲地引入，或者可在整个沉积工艺过程中连续地引入。
优选地，三元阻挡层含有钛硅氮化物。在这个实施例中，每个循环周期包括含钛化合物的脉冲输入、暂停、含硅化合物的脉冲输入、暂停、含氮化合物的脉冲输入和暂停。示例性的含钛化合物包括四(二甲基氨基)钛(TDMAT)、四(乙基甲基氨基)钛(TEMAT)、四(二乙基氨基)钛(TDEAT)、四氯化钛(TiCl4)、四碘化钛(TiI4)、四溴化钛(TiBr4)和其他钛的卤化物。示例性的含硅化合物包括硅烷、乙硅烷、甲基硅烷、二甲基硅烷、氯代硅烷(SiH3Cl)、二氯代硅烷(SiH2Cl2)和三氯代硅烷(SiHCl3)。示例性的含氮化合物包括：氨、肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷；叠氮基乙烷；其衍生物；及其组合。
为开始TixSiyN层的循环沉积，将氩气引入处理室200来稳定其中的压力和温度。这种单独的氩气流在整个沉积工艺过程中连续地流动，使得在每种化合物的脉冲输入之间仅有氩气流动。单独的氩气流以约100sccm-1000sccm流动，例如在约100sccm-400sccm之间。一方面，在室内温度和压力已分别稳定在约250℃和约2Torr之后，以约10sccm-1000sccm的流速，脉冲时间约为0.6秒或更短来提供TDMAT的脉冲输入。然后以约5sccm-500sccm的流速，脉冲时间约为1秒或更短来提供硅烷的脉冲输入。然后以约100sccm-5000sccm的流速，脉冲时间约为0.6秒或更短来提供氨的脉冲输入。
TDMAT和硅烷的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。硅烷和氨的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。脉冲输入氨之后也暂停约1.0秒或更短，约0.5秒或更短，或者约0.1秒或更短。一方面，当硅烷的脉冲进入时，TDMAT的脉冲可能仍在室内，且当氨的脉冲进入时，硅烷的脉冲可能仍在室内。
室压约1.0-5.0Torr下，加热器的温度维持在约100℃-300℃。由TDMAT的脉冲输入、暂停、硅烷的脉冲输入、暂停、氨的脉冲输入和暂停组成的每个循环周期提供了每循环厚度在约之间的钛硅氮化物层。可重复这个交替的工艺顺序，直至达到所期望的厚度，即少于约
Figure C200710101714D00162
列如约
Figure C200710101714D00163
因此，该沉积方法需要10-70个循环周期。
另一方面，厚度约为
Figure C200710101714D00164
或更少，例如约
Figure C200710101714D00165
的α相钽(α-Ta)层可沉积在至少一部分已先沉积的二元层(TaN)或三元层(TiSiN)上。可利用传统技术，例如PVD和CVD来沉积α-Ta层，以形成双层叠层。例如，双层叠层可包括通过上述循环层沉积而沉积的TaN部分，和通过高密等离子物理气相沉积(HDP-PVD)而沉积的α-Ta部分。相对于β相钽，由于α相钽的电阻较低，所以α相是优选的。
进一步说明，叠层的α-Ta部分可利用离子化金属等离子(IMP)室沉积，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的VectraTM室。IMP室包括目标材料、线圈和偏置衬底支架部件，并也可被集成进也可从应用材料公司获得的EnduraTM平台内。约0.5kW-5kW的功率应用在目标材料上，约0.5kW-3kW的功率应用在线圈上。频率约13.56MHz，约200W-500W的功率还应用在衬底支架部件以使衬底偏置。氩气以约35sccm-85sccm的速率流进室内，并以约5sccm-100sccm的速率向室内加入氮气。室压通常在约5mTorr-100mTorr之间，而室温在约20℃-300℃之间。
上述阻挡层膜可从后沉积处理工艺中受益，例如等离子处理工艺或化学处理工艺。等离子处理工艺可降低电阻，提高产率。典型的等离子处理可包括氩等离子、氮等离子、或氮和氢等离子。等离子处理可在发生阻挡层沉积的同一沉积室中或不同的室中进行。如果等离子处理在同一室中发生，则等离子体可以是原位等离子体或由远程等离子源发送的等离子体，例如远程感应耦合源或微波源。
虽然不希望被理论所限，但我们相信例如氮化钽膜的等离子处理通过喷溅出氮而降低了一个或多个亚层的氮含量，从而降低了电阻率。例如，我们认为相对于非等离子处理过的氮化钽层，等离子处理使得氮化钽层含有更多的钽。换句话说，利用等离子处理工艺，1：1的Ta：N膜可转变为2：1的Ta：N膜。可获得对于0.004微米(40埃)厚的膜，其层电阻约等于1200微欧姆厘米或更低的氮化钽膜。
因此，其他非化学反应性气体可用来从阻挡层物理地置换氮，例如氖气(Ne)、氙气(Xe)、氦气(He)和氢气(H2)。一般地，为了优先喷射出N，更希望等离子气体原子或分子的原子质量接近N的原子质量，而不是接近Ta。但是，如果特定气体优先进行反应来去除N，而留下Ta时，则可利用化学反应工艺过程。
化学处理工艺过程也能降低电阻，提高产率。典型的化学处理可包括暴露于铝化合物或硅化合物。这些化合物可包括但不限于DMAH、TMA、硅烷、二甲基硅烷、三甲基硅烷和其他有机硅烷化合物。化学处理通常在约1Torr-10Torr的压力下、约200℃-400℃的温度下进行。化学处理之后，已观察到根据上述方法沉积的氮化钽膜相对于未进行化学处理的膜，其去湿能力得以改善。
后续沉积处理工艺过程可在形成阻挡层之后进行。或者，该处理可在各个单层的沉积之间进行，或在每个循环周期的沉积之间进行。例如，处理工艺过程可在每形成约0.003-0.005微米(30-50埃)的层之后进行，或在约每7-10个循环周期后进行。
而且，在沉积阻挡层130之前，可清洗已图案化的或蚀刻过的衬底介电层112来去除表面的自然氧化物或其他污染物。例如，在远程等离子源(例如可从位于加利福尼亚的圣克拉拉的应用材料公司获得的反应预清洗室)内，反应性气体被激发成等离子体。通过将远程等离子源连接到金属CVD或PVD室，也可在这些室内完成预清洗。或者，具有输气装置的金属沉积室可改为通过现有的气体入口(例如位于衬底上方的气体分配喷头)来传送预清洗气体等离子体。
一方面，反应预清洗工艺过程形成来自一种或多种反应性气体的等离子体的自由基，例如氩气、氦气、氢气、氮气、含氟化合物及其组合。例如，反应性气体可包括四氟化碳(CF4)和氧气(O2)的混合物，或氦气(He)和三氟化氮(NF3)的混合物。更优选地，反应性气体是氦气和三氟化氮的混合物。
氩气等离子处理之后，室压增加到约140mTorr，基本由氢气和氦气组成的处理气体被引入处理区。优选地，这种处理气体包括约5％的氢气和约95％的氦气。通过应用约50瓦-500瓦的功率来产生氢等离子体。将氢等离子体维持约10秒-300秒。
再参照图2C，可利用高密等离子物理气相沉积(HDP-PVD)来沉积晶种层140，以能实现较好的保形覆盖。HDP-PVD室的一个实例是可从加利福尼亚的圣克拉拉的应用材料公司获得的自离子化等离子SIPTM室，可将其集成进从应用材料公司获得的EnduraTM平台。当然，也可利用其他技术，例如物理气相沉积、化学气相沉积、无电镀和电镀。
典型的SIPTM室包括目标材料、线圈和偏置衬底支架部件。为形成铜晶种层，约0.5kW-5kW的功率应用在目标材料上，约0.5kW-3kW的功率应用在线圈上。并应用频率约13.56MHz下约200W-500W的功率来偏置衬底。氩气以约35sccm-85sccm的速率流进室内，并以约5sccm-100sccm的速率向室内加入氮气。室压通常在约5mTorr-100mTorr之间。
或者，可通过任意合适技术，例如物理气相沉积、化学气相沉积、无电沉积或其组合技术，来沉积含有铜合金的晶种层140。优选地，铜合金晶种层140含有铝，且是利用上述PVD技术沉积的。在沉积过程中，处理室的压力维持在约0.1mtorr-10mtorr之间。目标材料包括铜和原子重量百分比在约2-10之间的铝。目标材料可以是在约5kW-100kW的功率下直流偏置的。支架可以是在约10W-1000W的功率下射频偏置的。铜合金晶种层140的沉积厚度至少约
Figure C200710101714D00181
且在约
Figure C200710101714D00182
之间。
参照图2D，可利用化学气相沉积(CVD)、物理气相沉积(PVD)、电镀或其组合来形成金属层142。例如，由含有二甲基氢化铝(DMAH)和氢气(H2)或氩气(Ar)的气体混合物或其他含DMAH的混合物的反应可沉积铝(Al)层，由含有Cu+2(hfac)2(六氟乙酰丙酮铜)、Cu+2(fod)2(七氟二甲基辛二烯烃铜)、Cu+1hfac TMVS(六氟乙酰丙酮铜三甲基乙烯基硅烷)或其组合的气体混合物可沉积CVD铜层，并且由含有六氟化钨(WF6)和还原气体的气体混合物可沉积CVD钨层。由铜目标材料、铝目标材料或钨目标材料可沉积PVD层。
而且，金属层142可以是难熔金属化合物，包括但不限于钛(Ti)、钨(W)、钽(Ta)、锆(Zr)、铪(Hf)、钼(Mo)、铌(Nb)、钒(V)和铬(Cr)等。通常，难熔金属与反应组分结合，例如氯(Cl)或氟(F)，并与另一种气体一起提供以形成难熔金属化合物。例如，四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、五氯化钒(VCl5)或四氯化铬(CrCl4)可作为含难熔金属的化合物气体。
优选地，金属层142是铜，在电镀单元内形成，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的ElectraTM Cu ECP装置。ElectraTM CuECP装置也可集成进也可从应用材料公司获得的EnduraTM平台。
在题为“Electro-deposition Chemistry”的共同受让的美国专利No.6,113,771中描述了铜电解质溶液和铜电镀技术，作为参考文献这里引用了其内容。一般地，电镀浴的铜浓度大于约0.7M，硫酸铜浓度约为0.85，pH值约为1.75。电镀浴也可包含各种本领域公知的添加剂。浴温在约15℃-25℃之间。偏压在约-15伏到15伏之间。一方面，正偏压在约0.1伏到10伏之间，而负偏压在约-0.1到-10伏之间。
可选地，金属层142沉积之后，可进行热退火工艺过程，使晶片处于约100℃-400℃温度下约10分钟到1小时，优选约30分钟。以约100sccm-10000sccm的速率引入例如氦气、氢气、氮气或其混合物的载气/清洗气。室压维持在约2Torr-10Torr之间。射频功率在约13.56MHz的频率下约为200W-1000W，且衬底间距优选在约300密尔-800密尔之间。
沉积之后，可对所得结构的顶部进行平坦化。可用化学机械抛光(CMP)装置，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的MirraTM装置。可选地，在上述后续层的沉积之间可对结构的中间表面进行平坦化。
图4是示例性多室处理装置600的示意性俯视图，其适于用来进行以上公开的沉积序列。这种处理装置600可以是加利福尼亚的圣克拉拉的应用材料公司市售的EnduraTM装置。在1993年2月16日授权的题为“StageVacuum Wafer Processing System and Method”的美国专利No.5,186,718中公开了类似的多室处理装置，作为参考文献这里引用了其内容。
装置600一般包括用来将衬底送入装置600和从装置600中取出衬底的负荷固定室602、604。通常，由于装置600处于真空条件下，所以负荷固定室602、604可将引入装置600内的衬底“吸出”(pump down)。第一机械手610可在负荷固定室602、604与第一套一个或多个衬底处理室612、614、616、618(所图示的有四个)之间传送衬底。每个处理室612、614、616、618可配备成能进行许多衬底处理操作，例如循环层沉积、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定位和其他衬底工艺过程。第一机械手610还能将衬底传递到一个或多个传送室622、624，并从传送室中取出衬底。
传送室622、624在允许将衬底在装置600内传递的同时，并被用来维持超高真空状态。第二机械手630可在传送室622、624与第二套一个或多个衬底处理室632、634、636、638之间传送衬底。类似于处理室612、614、616、618，处理室632、634、636、638可配备成能进行多种不同衬底处理操作，例如循环层沉积、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定位。衬底处理室612、614、616、618、632、634、636、638中的任一个如果对于装置600进行的具体工艺过程是不需要的，都可从装置600中除去。
在一种结构方案中，每个处理室632和638可以是适于沉积晶种层的物理气相沉积室、化学气相沉积室或循环沉积室；每个处理室634和636可以是适于沉积阻挡层的循环沉积室、化学气相沉积室或物理气相沉积室；每个处理室612和614可以是适于沉积介电层的物理气相沉积室、化学气相沉积室或循环沉积室；并且每个处理室616和618可以是配备成能够为互连构造蚀刻孔或开口的蚀刻室。装置600的这种具体结构方案是用来说明本发明，并非用来限制本发明的范围。
我们相信厚度大于约20埃的难熔金属氮化物层将终止下层金属互连的生长模式。厚度大于或等于约20埃的难熔金属氮化物层将建立其自身独特的生长模式，这种模式将被更高层的互连首先采用，直至更高层的互连达到特定厚度并建立其自身的模式，从而形成不同的晶体结构。这种现象发生是因为：在初始沉积阶段，后续沉积的层的生长模式通常类似于其底层的生长模式，但是一旦后续层达到特定厚度，则所述后续层将呈现其自身的内在模式。
例如氮化钽自然趋向于形成厚度不小于20埃的无定形结构。在厚度小于约20埃时，TaN类似其底层的生长模式。因此，后续铜互连层令人惊讶地穿过阻挡层而生长，所述阻挡层是根据本发明的方法沉积的，呈现类似于底层铜互连的生长模式。换句话说，厚度小于或等于约20埃的TaN阻挡层使得铜粒能够较好地生长，使得铜粒能够穿过TaN阻挡层延伸生长，或简单地说，就是铜在氮化钽阻挡层上呈现出外延生长。
图5是构造300的透射电子显微镜(TEM)图像，构造300具有根据上述沉积技术而在其内沉积的氮化钽阻挡层310。构造300的高宽比为5：1，并在200mm的晶片上形成。阻挡层310由氮化钽组成，并是在250℃、2Torr下沉积出的。每个循环周期持续约2秒，并进行了30个循环周期。氮化钽阻挡层310的厚度约为15埃。如所示的，阻挡层310是保形的(conformal)，表明在整个构造300中阶梯覆盖较好。
图6是表示多层互连结构400的部分横截面的TEM图像。多层互连结构400包括下层铜互连405、氮化钽阻挡层410和上层铜互连420。下层铜互连405的铜粒生长穿过阻挡层410，延伸进上层铜互连420内，从而表明氮化钽阻挡层410的外延生长。阻挡层410由氮化钽组成，并是在250℃、2Torr下沉积出的。每个循环周期持续约2秒，并进行了30个循环周期。阻挡层410的厚度约为10埃，这个厚度足以抑制铜迁移进介电层内。
利用TEM仪器测量参照图3和4所示和描述的阻挡层310和410。应该理解，这种测量技术及任意其他用来测量沉积层厚度的技术都存在边缘误差。因此，这里所提供的厚度是近似的，且是根据目前已知的最好技术来量化的，但并非意在限制本发明的范围。
下面的实例意在提供本发明的一个实施例的非限制性说明。
实例：
利用循环沉积在下层铜层上沉积出厚约为的TaN层。通过物理气相沉积在TaN层上沉积出厚约为
Figure C200710101714D00222
的铜合金晶种层。铜合金晶种层含有浓度约为2.0个原子百分比的铝，并且是通过PVD，利用由浓度约为2.0个原子百分比的铝组成的铜-铝目标材料而沉积出的。然后利用ECP沉积本体铜层来填满构造。接着在氮气(N2)和氢气(H2)的环境中，约380℃的温度下将衬底热退火约15分钟。
构造总电阻显著降低，上层铜层令人惊讶地呈现出类似于下层铜层的晶粒生长。与
Figure C200710101714D00223
的PVD Ta相比较，TaN层的阻挡性能呈现出更长的无故障工作时间(TTF)。另外，TaN层表现出更低的接触电阻和紧密的扩散分布。TaN层还呈现出优异的形态学特性，包括光滑的表面形态和针孔自由表面。
此外，根据这里所描述的PDMAT和氨工艺过程沉积的TaN膜表现出不同寻常的膜均匀性。膜厚度与沉积循环次数成线性比例，从而保证了精确的厚度控制。并发现在200mm的衬底上，对于10埃，厚度均匀性是1.8％；对于100埃，厚度均匀性是2.1％。沉积膜呈现出非同寻常的保形覆盖，至少在某些结果中接近100％。
最后，铜合金晶种层表现出对TaN层优异的粘合/润湿性能。(PVD)铜晶种层在沉积的阻挡层上呈现出优选的{111}取向。{111}晶体取向是优选的，这是因为这种取向提供了较大的晶粒尺寸，并由于更大的晶粒尺寸从而呈现出较好的电迁移电阻。
虽然前述部分涉及本发明的实施例，但在不偏离本发明的基本范围以及由所附的权利要求所确定的范围的情况下，可设计本发明的其他进一步实施例。

Claims (17)

1.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积含难熔金属的阻挡层，直至所述含难熔金属的阻挡层的厚度小于20埃，该阻挡层的厚度使得所述阻挡层呈现类晶体结构，并足以抑制原子迁移；
在至少一部分所述阻挡层上沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述阻挡层进入所述第二金属层内。
2.如权利要求1所述的方法，其中所述含难熔金属的阻挡层包括氮化钽。
3.如权利要求1所述的方法，其中重复每次脉冲输入，直至所述含难熔金属的阻挡层的厚度小于10埃。
4.如权利要求1所述的方法，其中所述交替的脉冲输入被重复10-70次来形成所述含难熔金属的阻挡层。
5.如权利要求1所述的方法，还包括在每次含金属化合物的脉冲和每次含氮化合物的脉冲过程中连续地流入清洗气。
6.如权利要求5所述的方法，其中所述清洗气包括氩气、氮气、氦气或其组合。
7.如权利要求1所述的方法，其中通过一时间延迟把每次含金属化合物的脉冲输入和含氮化合物的脉冲输入分开。
8.如权利要求7所述的方法，其中每次时间延迟对于一定量的含金属化合物或一定量的含氮化合物吸附在所述衬底表面上是足够长的。
9.如权利要求8所述的方法，其中所述时间延迟足够长以去除所述衬底表面上的未吸附的分子。
10.如权利要求1所述的方法，其中所述含氮化合物选自氨；肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷；叠氮基乙烷；其衍生物；及其组合。
11.如权利要求1所述的方法，其中所述含金属化合物选自四(二甲基氨基)钛；四(乙基甲基氨基)钛；四(二乙基氨基)钛；四氯化钛)；四碘化钛；四溴化钛；t-丁基亚氨基-三(二乙基氨基)钽；五(乙基甲基氨基)钽；五(二甲基氨基)钽；五(二乙基氨基)钽；t-丁基亚氨基-三(二乙基甲基氨基)钽；t-丁基亚氨基-三(二甲基氨基)钽；二(环戊二烯基)钽化三氢；二(甲基环戊二烯基)钽化三氢；其衍生物；及其组合。
12.如权利要求1所述的方法，其中所述第一金属层和第二金属层各个都包括钨或铜。
13.如权利要求1所述的方法，其中所述铜合金晶种层包括沉积在所述阻挡层上的第一晶种层和沉积在所述第一晶种层上的第二晶种层。
14.如权利要求13所述的方法，其中所述第一晶种层包括铜和选自铝、镁、钛、锆、锡及其组合的金属，且所述第二晶种层包括铜。
15.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含钛化合物的脉冲、一次或多次含硅化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分所述第一金属层上沉积厚度小于20埃的钛硅氮化物层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述钛硅氮化物层进入所述第二金属层内。
16.一种在衬底上形成金属互连的方法，包括：
在至少一部分金属层上沉积厚度小于20埃的双层阻挡层，所述双层阻挡层包括：
通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮
化合物的脉冲而沉积的第一氮化钽层；和
第二α相钽层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述金属层的晶粒生长延伸穿过所述双层阻挡层进入所述第二金属层内。
17.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分所述第一金属层上沉积厚度小于20埃的氮化钽阻挡层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述氮化钽阻挡层进入所述第二金属层内。
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