CN100524985C - 单模垂直腔面发射激光器及其制造方法 - Google Patents
单模垂直腔面发射激光器及其制造方法 Download PDFInfo
- Publication number
- CN100524985C CN100524985C CNB2004100804555A CN200410080455A CN100524985C CN 100524985 C CN100524985 C CN 100524985C CN B2004100804555 A CNB2004100804555 A CN B2004100804555A CN 200410080455 A CN200410080455 A CN 200410080455A CN 100524985 C CN100524985 C CN 100524985C
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- China
- Prior art keywords
- speculum
- vertical
- operation wavelength
- surface emitting
- extension area
- Prior art date
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/694,290 | 2003-10-27 | ||
US10/694,290 US7218660B2 (en) | 2003-10-27 | 2003-10-27 | Single-mode vertical cavity surface emitting lasers and methods of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612433A CN1612433A (zh) | 2005-05-04 |
CN100524985C true CN100524985C (zh) | 2009-08-05 |
Family
ID=34522574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100804555A Expired - Fee Related CN100524985C (zh) | 2003-10-27 | 2004-10-10 | 单模垂直腔面发射激光器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7218660B2 (zh) |
JP (1) | JP4869580B2 (zh) |
CN (1) | CN100524985C (zh) |
DE (1) | DE102004032467B4 (zh) |
Families Citing this family (27)
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US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
US7545560B2 (en) * | 2004-10-08 | 2009-06-09 | Finisar Corporation | AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector |
KR100982421B1 (ko) * | 2004-10-14 | 2010-09-15 | 삼성전자주식회사 | 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자 |
US7339726B2 (en) * | 2004-12-09 | 2008-03-04 | Epitaxial Technologies | Modulating retroreflector array using vertical cavity optical amplifiers |
KR100982423B1 (ko) * | 2004-12-28 | 2010-09-15 | 삼성전자주식회사 | 이중채널 전류주입구조를 구비하는 면발광 레이저 소자 |
US7577172B2 (en) * | 2005-06-01 | 2009-08-18 | Agilent Technologies, Inc. | Active region of a light emitting device optimized for increased modulation speed operation |
WO2007103527A2 (en) * | 2006-03-07 | 2007-09-13 | Brenner Mary K | Red light laser |
JP5593700B2 (ja) * | 2010-01-08 | 2014-09-24 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP2011155143A (ja) * | 2010-01-27 | 2011-08-11 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP5824802B2 (ja) | 2010-12-10 | 2015-12-02 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
US8559127B2 (en) | 2010-12-22 | 2013-10-15 | Seagate Technology Llc | Integrated heat assisted magnetic recording head with extended cavity vertical cavity surface emitting laser diode |
JP2014508425A (ja) * | 2011-03-17 | 2014-04-03 | フィニサー コーポレイション | 高インジウムおよび低アルミニウムを有する量子井戸と高アルミニウムおよび低インジウムを有するバリア層とを備えトラップが削減されたレーザ |
US8451695B2 (en) * | 2011-06-23 | 2013-05-28 | Seagate Technology Llc | Vertical cavity surface emitting laser with integrated mirror and waveguide |
JP2013045845A (ja) * | 2011-08-23 | 2013-03-04 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
US9166370B2 (en) | 2011-10-04 | 2015-10-20 | Fuji Xerox Co., Ltd. | Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus |
JP5978669B2 (ja) | 2012-03-15 | 2016-08-24 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP5998701B2 (ja) | 2012-07-23 | 2016-09-28 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP2014086565A (ja) | 2012-10-24 | 2014-05-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
US10938177B2 (en) * | 2014-08-29 | 2021-03-02 | Kyoto University | Two-dimensional photonic crystal surface emitting laser |
CN105428999B (zh) * | 2015-12-29 | 2018-12-07 | 中国科学院半导体研究所 | 少模面发射激光器 |
US10116115B2 (en) * | 2017-02-22 | 2018-10-30 | Geoff W. Taylor | Integrated circuit implementing a VCSEL array or VCSEL device |
CN107910750B (zh) * | 2017-06-28 | 2021-04-16 | 超晶科技(北京)有限公司 | 一种半导体激光器材料的制备方法 |
CN108539577A (zh) * | 2018-06-26 | 2018-09-14 | 北京工业大学 | 一种电流导引型vcsel及其制备方法 |
US20220013992A1 (en) * | 2018-09-25 | 2022-01-13 | Shenzhen Raysees Technology Co., Ltd. | Vertical Cavity Surface Emitting Laser (VCSEL) Array and Manufacturing Method |
CN117712830A (zh) * | 2024-02-05 | 2024-03-15 | 南昌凯迅光电股份有限公司 | 一种垂直腔面发射激光器及其制作方法 |
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US5328854A (en) * | 1993-03-31 | 1994-07-12 | At&T Bell Laboratories | Fabrication of electronic devices with an internal window |
US5659568A (en) * | 1995-05-23 | 1997-08-19 | Hewlett-Packard Company | Low noise surface emitting laser for multimode optical link applications |
CN1335658A (zh) * | 2000-07-20 | 2002-02-13 | 三星电子株式会社 | 多波长面发射激光器及其制造方法 |
EP1317035A1 (en) * | 2001-11-29 | 2003-06-04 | Hitachi Ltd. | Optical pulse generator |
US20030185267A1 (en) * | 2002-03-28 | 2003-10-02 | Applied Optoelectronics, Inc. | VCSEL with antiguide current confinement layer |
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JP2618610B2 (ja) * | 1994-02-25 | 1997-06-11 | 松下電器産業株式会社 | 垂直共振器型面発光半導体レーザ |
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JPH10284800A (ja) * | 1997-04-04 | 1998-10-23 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
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-
2003
- 2003-10-27 US US10/694,290 patent/US7218660B2/en not_active Expired - Fee Related
-
2004
- 2004-07-05 DE DE102004032467A patent/DE102004032467B4/de not_active Expired - Fee Related
- 2004-10-10 CN CNB2004100804555A patent/CN100524985C/zh not_active Expired - Fee Related
- 2004-10-26 JP JP2004310832A patent/JP4869580B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5328854A (en) * | 1993-03-31 | 1994-07-12 | At&T Bell Laboratories | Fabrication of electronic devices with an internal window |
US5659568A (en) * | 1995-05-23 | 1997-08-19 | Hewlett-Packard Company | Low noise surface emitting laser for multimode optical link applications |
CN1335658A (zh) * | 2000-07-20 | 2002-02-13 | 三星电子株式会社 | 多波长面发射激光器及其制造方法 |
EP1317035A1 (en) * | 2001-11-29 | 2003-06-04 | Hitachi Ltd. | Optical pulse generator |
US20030185267A1 (en) * | 2002-03-28 | 2003-10-02 | Applied Optoelectronics, Inc. | VCSEL with antiguide current confinement layer |
Also Published As
Publication number | Publication date |
---|---|
DE102004032467A1 (de) | 2005-06-02 |
US7218660B2 (en) | 2007-05-15 |
JP4869580B2 (ja) | 2012-02-08 |
CN1612433A (zh) | 2005-05-04 |
DE102004032467B4 (de) | 2008-04-17 |
JP2005129960A (ja) | 2005-05-19 |
US20050089074A1 (en) | 2005-04-28 |
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