CN100539041C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN100539041C CN100539041C CNB2004800441992A CN200480044199A CN100539041C CN 100539041 C CN100539041 C CN 100539041C CN B2004800441992 A CNB2004800441992 A CN B2004800441992A CN 200480044199 A CN200480044199 A CN 200480044199A CN 100539041 C CN100539041 C CN 100539041C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 154
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 152
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 152
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000003054 catalyst Substances 0.000 claims abstract description 66
- 150000002739 metals Chemical class 0.000 claims abstract description 64
- 239000011229 interlayer Substances 0.000 claims abstract description 53
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- 230000015572 biosynthetic process Effects 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
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- 230000005764 inhibitory process Effects 0.000 claims description 5
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- 239000010410 layer Substances 0.000 description 21
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
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- 238000000137 annealing Methods 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NJFMNPFATSYWHB-UHFFFAOYSA-N ac1l9hgr Chemical compound [Fe].[Fe] NJFMNPFATSYWHB-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011943 nanocatalyst Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K85/60—Organic compounds having low molecular weight
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Abstract
Description
Claims (36)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/015732 WO2006043329A1 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101044605A CN101044605A (zh) | 2007-09-26 |
CN100539041C true CN100539041C (zh) | 2009-09-09 |
Family
ID=36202754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800441992A Expired - Fee Related CN100539041C (zh) | 2004-10-22 | 2004-10-22 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7700978B2 (zh) |
JP (1) | JP5045103B2 (zh) |
CN (1) | CN100539041C (zh) |
WO (1) | WO2006043329A1 (zh) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7989349B2 (en) * | 2005-04-15 | 2011-08-02 | Micron Technology, Inc. | Methods of manufacturing nanotubes having controlled characteristics |
US7884359B2 (en) * | 2006-06-09 | 2011-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Integrally gated carbon nanotube ionizer device |
JP4899703B2 (ja) * | 2006-08-07 | 2012-03-21 | 富士通株式会社 | カーボン配線構造およびその製造方法、および半導体装置 |
JP5055929B2 (ja) * | 2006-09-29 | 2012-10-24 | 富士通株式会社 | 電子デバイスの製造方法 |
FR2910706B1 (fr) | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | Element d'interconnexion a base de nanotubes de carbone |
WO2008099638A1 (ja) * | 2007-02-15 | 2008-08-21 | Nec Corporation | カーボンナノチューブ抵抗体、半導体装置、カーボンナノチューブ抵抗体及び半導体装置の製造方法 |
JP5194513B2 (ja) * | 2007-03-29 | 2013-05-08 | 富士通セミコンダクター株式会社 | 配線構造及びその形成方法 |
JP5233147B2 (ja) * | 2007-03-30 | 2013-07-10 | 富士通セミコンダクター株式会社 | 電子デバイス及びその製造方法 |
JP5181512B2 (ja) * | 2007-03-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
JP5168984B2 (ja) * | 2007-03-30 | 2013-03-27 | 富士通株式会社 | カーボンナノチューブ金属複合材料によるデバイス構造 |
WO2009023304A2 (en) * | 2007-05-02 | 2009-02-19 | Atomate Corporation | High density nanotube devices |
FR2917893B1 (fr) * | 2007-06-22 | 2009-08-28 | Commissariat Energie Atomique | Procede de fabrication d'une connexion electrique a base de nanotubes de carbone |
FR2920252A1 (fr) * | 2007-08-24 | 2009-02-27 | Commissariat Energie Atomique | Procede de realisation d'un transistor comportant une connexion electrique a base de nanotubes ou de nanofils. |
US8065634B1 (en) | 2007-09-28 | 2011-11-22 | The Board Of Trustees Of The Leland Stanford Junior University | System and method for analyzing a nanotube logic circuit |
FR2925764B1 (fr) * | 2007-12-20 | 2010-05-28 | Commissariat Energie Atomique | Procede de croissance horizontale de nanotubes/nanofibres. |
FR2925761B1 (fr) * | 2007-12-20 | 2010-08-20 | Commissariat Energie Atomique | Procede de realisation d'une connexion electrique, a base de nanotubes, entre deux surfaces en regard et circuit integre la comportant |
FR2928093B1 (fr) * | 2008-02-28 | 2010-12-31 | Commissariat Energie Atomique | Dispositif de separation de molecules et procede de fabrication. |
JP2009252798A (ja) * | 2008-04-01 | 2009-10-29 | Mitsumi Electric Co Ltd | カーボンナノチューブ電界効果トランジスタおよびその製造方法 |
US7867863B2 (en) * | 2008-06-12 | 2011-01-11 | Intel Corporation | Method for forming self-aligned source and drain contacts using a selectively passivated metal gate |
FR2933237B1 (fr) * | 2008-06-25 | 2010-10-29 | Commissariat Energie Atomique | Architecture d'interconnexions horizontales a base de nanotubes de carbone. |
KR101398634B1 (ko) * | 2008-07-11 | 2014-05-22 | 삼성전자주식회사 | 배선 구조체 및 이를 채택하는 전자 소자 |
FR2935538B1 (fr) * | 2008-09-01 | 2010-12-24 | Commissariat Energie Atomique | Substrat pour composant electronique ou electromecanique et nanoelements. |
CN101999063B (zh) * | 2009-05-04 | 2013-01-02 | Lg电子株式会社 | 空调 |
JP2011044488A (ja) * | 2009-08-19 | 2011-03-03 | Elpida Memory Inc | 半導体装置およびその製造方法 |
CN102044524B (zh) * | 2009-10-13 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其形成方法 |
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US20070205450A1 (en) | 2007-09-06 |
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US8034676B2 (en) | 2011-10-11 |
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