CN100568535C - 利用自对准后栅极控制前栅极绝缘体上硅mosfet的器件阈值 - Google Patents
利用自对准后栅极控制前栅极绝缘体上硅mosfet的器件阈值 Download PDFInfo
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- CN100568535C CN100568535C CNB2004800216833A CN200480021683A CN100568535C CN 100568535 C CN100568535 C CN 100568535C CN B2004800216833 A CNB2004800216833 A CN B2004800216833A CN 200480021683 A CN200480021683 A CN 200480021683A CN 100568535 C CN100568535 C CN 100568535C
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/639,942 | 2003-08-13 | ||
US10/639,942 US7018873B2 (en) | 2003-08-13 | 2003-08-13 | Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1830090A CN1830090A (zh) | 2006-09-06 |
CN100568535C true CN100568535C (zh) | 2009-12-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004800216833A Expired - Fee Related CN100568535C (zh) | 2003-08-13 | 2004-08-11 | 利用自对准后栅极控制前栅极绝缘体上硅mosfet的器件阈值 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7018873B2 (zh) |
EP (1) | EP1661158B1 (zh) |
JP (1) | JP4877629B2 (zh) |
KR (1) | KR100687130B1 (zh) |
CN (1) | CN100568535C (zh) |
AT (1) | ATE349773T1 (zh) |
DE (1) | DE602004003967T2 (zh) |
WO (1) | WO2005017976A2 (zh) |
Families Citing this family (65)
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JP4577680B2 (ja) * | 2004-04-13 | 2010-11-10 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
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CN1830090A (zh) | 2006-09-06 |
JP4877629B2 (ja) | 2012-02-15 |
US7018873B2 (en) | 2006-03-28 |
ATE349773T1 (de) | 2007-01-15 |
WO2005017976A3 (en) | 2005-04-28 |
US20050037582A1 (en) | 2005-02-17 |
EP1661158A2 (en) | 2006-05-31 |
JP2007534142A (ja) | 2007-11-22 |
EP1661158B1 (en) | 2006-12-27 |
KR20060034701A (ko) | 2006-04-24 |
KR100687130B1 (ko) | 2007-02-27 |
WO2005017976A2 (en) | 2005-02-24 |
DE602004003967T2 (de) | 2007-08-30 |
DE602004003967D1 (de) | 2007-02-08 |
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