CN100578289C - Diffraction color changing laser marking method and apparatus thereof - Google Patents
Diffraction color changing laser marking method and apparatus thereof Download PDFInfo
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- CN100578289C CN100578289C CN200710153957A CN200710153957A CN100578289C CN 100578289 C CN100578289 C CN 100578289C CN 200710153957 A CN200710153957 A CN 200710153957A CN 200710153957 A CN200710153957 A CN 200710153957A CN 100578289 C CN100578289 C CN 100578289C
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Abstract
The method thereof comprises: using a high power semiconductor pumping solid state laser as light source; the laser beam satisfies the requirement of interference; using a beam-splitting component to generate a beam-splitting light; using a optical lens group to converge the light spot on the material surface to form an even interference fringe optical field; the laser power density on the surface of the materials is over a damage threshold to form the fringe etch; by controlling the scan, realizing the marking of diffracted light color-changed image.
Description
Technical field
The present invention relates to a kind of is the device that feature designs with printing or marking process, is specifically related to a kind of marking method with diffraction color changing feature and device that adopts laser system to realize.
Background technology
Laser marking is to utilize the laser beam of high-energy-density to interacting goals, makes the variation of target surface generation physics or chemistry, thereby obtains the mark mode of visible pattern.Adopt laser marking system can form literal, figure, product ID etc. at material surface.High-octane laser beam focuses on the material surface, and material is vaporized rapidly, forms pit, controls cut-offfing of laser simultaneously along with laser beam moves regularly at material surface, and laser beam also just is processed to form appointed pattern at material surface.Laser marking is a kind of contactless processing mode, fast with its signature velocity, do not have wearing and tearing, easy to operate, easily be automated operation and receive an acclaim, in nearly ten years, obtained development fast.
Wherein, the vibration mirror scanning type mark is because of its applied range, can carry out vector mark and dot matrix mark, label range is adjustable, and have that response speed is fast, mark speed height (but mark p.s. hundreds of character), mark quality are higher, the light path good seal performance, advantages such as environmental suitability is strong have been become main product.Its principle of work be with laser beam incident to two catoptrons (galvanometer), the reflection angle of catoptron computerizeds control, these two catoptrons can be respectively along X, Y-axis scanning, thereby reach the deflection of laser beam, make have certain power density the laser focusing point on the mark material by required requirement campaign, thereby on material surface, stay permanent mark.
In order to improve the overall conversion efficiency of laser instrument, dwindle the volume of laser instrument cooling system, begin to adopt the semiconductor pumped solid-state laser (DPSSL) of high power density, high light beam quality to carry out the processing such as delineation, punching, mark of laser, this class laser instrument such as Nd:YAG laser instrument (output wavelength 1060nm commonly used, repetition pulse frequency 50kHz), Nd:YFL laser instrument (output wavelength 1053nm, repetition pulse frequency 15kHz), the light beam pulsewidth is at 20-60ns.
The basic structure of common vibration mirror scanning type laser marking system is laser instrument, galvanometer, F-theta mirror, mobile platform and the driving circuit of band Q modulation.By the control of laser marking software, adopt said structure can realize laser marking.But there is following point in it: (1) in order to obtain the laser output of high-average power, the laser beam of mark machine is many transverse modes hot spot (M
2＜10), smallest spot can focus on about 50 μ m, for more light pencil, then difficulty focusing; (2) add man-hour at laser marking, focused beam forms the high-energy-density luminous point and comes ablator at part generation high temperature, the wavelength that the common laser marking system adopts is 1060nm, 532nm, usually, machined material is lower to the absorptivity of the pulse laser of above-mentioned wavelength, and therefore, thermal effect clearly, easily in the contiguous meteorite crater effect that forms of processing stand, the resolution of the image that obtains behind the laser marking is low.In addition, during the conventional laser mark, adopt the processing of tens kHz laser pulses, the image that marking method forms is an ablative-type protective coating, and image self can not produce the phototropic effect.
On the other hand, the laser hologram goods are false proof in brand, be widely used on the banknote, certificate, packing, the method for making of laser hologram goods is to pass through laser interference lithography, on photoresist, form embossment structure, form the metallic nickel version with electrocasting method, by the mode of mold pressing, on plastic films, form the image of laser hologram.Different with laser marking, this mode belongs to laser cold working field, is suitable for large batch of production, and cost is low, and still, on using, holographic plate-making is difficult to as laser marking, forms literal and figure such as sequence number one class on goods.And on goods, form sequence number, very necessary in management and logistics.
Summary of the invention
The object of the invention provides a kind of laser marking methods that can arrive micron-sized meticulous striped at the tens of microns of the direct formation of material surface, be used for having in material smooth surface etching the diffraction image of discoloration effect.
Another object of the present invention is that a kind of laser mark printing device that adopts the etching diffraction color changing image of said method realization is provided.
For achieving the above object, the technical solution used in the present invention is: a kind of diffraction color changing laser marking method, adopt the high power semi-conductor light-pumped solid state laser as light source, laser beam satisfies interferes requirement, produce beam splitting light by beam splitting element, by optical lens group luminous point is converged to material surface, form even interference fringe light field, surpass the material damage threshold value at material surface position laser power density, to form the interference fringe etching, by scan control, realize the mark of diffraction light change chromatic graph shape.
In the technique scheme, described high power semi-conductor light-pumped solid state laser (DPSSL) adopts the wavelength of 1.064um or 1.053um, or two, three or quadruple wavelength (527nm, 532nm, 351nm, 355nm, 263nm, 266nm), described diaphragm is adjustable rectangular aperture.
Laser interference can produce the micron order striped, and this striped issues to gain interest in white light and penetrates after overwriting, forms effect of dispersion, produces iridescence.Shown in accompanying drawing 1, establishing the grating fringe cycle is cycle d, and illumination wavelengths is λ, and then white light is through behind the grating, and the pass of light dispersion angle and microstructure d and wavelength is,
sinΦ＝±kλ/d
Here k is a diffraction progression, and d is relevant with wavelength by the angle that intersects that participates in interfering beam,
d＝λ/[2sin(θ/2)]
Like this, in the laser marking optical system, the notion of above-mentioned interference is introduced, can directly be etched the micron order striped, under the common white rayed, produce color changeable effect at material surface by laser marking.
In the technique scheme, described scan control is two-stage control, and the surface for the treatment of mark is divided into the combination of a plurality of zonules, and galvanometer is set in light path, in each zonule, carries out the scanning interferometer laser ablation by the control galvanometer; After the etching of finishing a zonule, by the platform move mode, enter the etching of next zonule, realize the interference mark on whole surface successively; In the mark process, by changing the direction of beam splitting element, change the interference fringe orientation, thereby realize the interference light etching mark of diffraction image.
Described etching is, the interference fringe light field is positioned at the rectangle luminous point of material surface, adopt the output of computing machine output TTL signal controlling laser pulse, carry out single pulse processing at same position, the control laser power, in the light intensity phase strong point material generating gasification of interference fringe, form the interference fringe structure at material surface.
Usually, requiring the described material surface that is marked is shiny surface, and the material that is marked is selected from encapsulating material, smooth metal surface or the plastics of chip.
Adopt said method to realize the device of laser marking, comprise optical head, galvanometer, F-θ mirror, motion platform and control system, described optical head is the interfere type optical head, be made of light source, beam shaping and interference optics, described light source is made up of diode pumped solid state laser, collimating mirror group and the power supply of accepting the TTL signal controlling; Described beam shaping comprises adjustable rectangular aperture and lens combination, and described interference optics comprises beam splitting element, image optics lens combination; The light path that each arrangements of components constitutes meets the optical interference imaging requirements, the interference fringe light field of formation be positioned at be placed on described motion platform treat the mark material surface.
Wherein, described laser instrument is the solid state laser of high power semi-conductor pumping, and optical maser wavelength is selected from 1.064um or 1.053um, or two, three or the quadruple wavelength, be 527nm, 532nm, 351nm, 355nm, 263nm, 266nm, described laser instrument is single transverse mode TEM
00, optical quality M
2＜1.2, polarization 100: 1, light beam satisfy to produce interferes requirement.
The angle of the light beam beam splitting of described beam splitting element from 5 spend to 35 the degree, the numerical aperture of described image optics lens is 0.2～0.5, beam splitting element is selected from phase grating or beam splitter prism.
When beam splitting element adopted phase grating, the material of grating substrate was fused quartz or calcium fluoride.
A kind of preferred scheme, described beam splitting element is made of the phase grating group, grating cycle variation range is 2～20 microns, substrate is a fused quartz, through after the ion etching, the grating flute profile is a rectangular distribution, and the grooved degree of depth is controlled at λ/[2 (n-1)]), the ultraviolet wavelength of λ for using, n is the substrate light refractive index.Like this, after the beam splitting ± 1 grade of theoretic gross energy of light can reach 81%.The fringe period that forms after as the beam splitter mark with above-mentioned grating depends on the digital aperture of condenser lens, usually, the fringe period after interference forms can be in 1～10 micron scope, for metal material, the control laser power, etching depth h is between 0.15～0.3 micron.When wavelength adopted the laser of quadruple wavelength, the material of grating substrate preferably adopted the calcium fluoride substrate.
Because the effect of beam splitting element is that laser is divided into two-beam, the scheme that can adopt also comprises: described beam splitting element adopts two groups of right-angle prism gummeds to form, wherein one side is plated semi-transparent semi-reflecting multilayer dielectric film, adopt two right-angle prisms as the total internal reflection element, form directional light, through the lens combination imaging, on the recording materials surface, form interference fringe.By adjusting the distance between prism, can realize zero optical path difference.Adjust the distance between prism synchronously, can change the angle of the interference light that forms after the lens focus, reach the purpose that changes luminous point internal interference fringe spacing, the above-mentioned beam splitting element efficiency of light energy utilization is about 80%.
Adopt the single beam mode different with common laser marking, the present invention adopts the two-beam interference mode, and the solid-state laser of selecting the high power semi-conductor pumping for use is as light source (single transverse mode TEM
00, optical quality M
2＜1.2, polarization 100: 1), light beam satisfies the requirement that produces interference effect.
Usually, the interference fringe displacement that allows during etching should be satisfied＜the d/8 fringe period, can calculate, and under multiple-pulse processing, interference fringe is allowed velocity of displacement, and establishing pulsed frequency is f, and then the interference fringe velocity of displacement should be less than fd/8.
For example, for the meticulous striped in cycle d=1 micron cycle, the vibration of the permission when etching or displacement＜0.125um.
1) under low frequency 1kHz pulse, the recurrent interval is 1ms, and then the velocity of displacement in two subpulses should be less than 0.125mm/s.Under this situation, the Oscillation Amplitude of system will surpass above-mentioned velocity of displacement scope of allowing, if a plurality of pulse etchings are arranged in same position, position of interference fringe in any twice burst length will not repeat, the processing of continuous impulse can not guarantee the interference fringe aligning, and the quality of interference fringe will descend or smoothing.
2) under high frequency 30kHz pulse, the recurrent interval is 33us, and then the interference fringe velocity of displacement in two subpulses should under this situation, can carry out etching with several pulse lasers in same position less than 3.8mm/s.
For the striped of cycle d=10 micron, permission vibration or displacement＜1.25um when etching.
1) under low frequency 1kHz pulse, velocity of displacement should be less than 1.25mm/s.
2) under high frequency 30kHz pulse, then the interference fringe velocity of displacement in two subpulses should be less than 38mm/s;
According to aforementioned calculation, permissible interference laser marking mode has following several:
1. for 1 micron left and right sides high precision striped etching, at same position, galvanometer and operation moving platform are answered relative fixed, can adopt several high-frequency impulse etchings, and pulsed laser energy is less, reduces thermal effect, and the speed of this mode mark is slower.
2. the general precision striped etching about little for 10 can adopt the high-frequency impulse multiple etching, and simultaneously, platform admits of certain movement velocity, and the speed of this mode mark is very fast.
3. adopt monopulse laser ablation, one pulse time 20ns, the movement velocity v of the galvanometer of allowing＜6.25m/s.Like this, mark speed is very fast, but the pulse energy of the single laser beam that needs is bigger.Therefore, adopt the mode of only carrying out single pulse processing in same position, laser pulse is by computing machine TTL signal controlling, and when computing machine sent the pulse signal instruction, laser instrument sent pulse laser beam, guaranteed not form twice processing at same position.
The actual grade of the etching of the micron order interference fringe that the present invention requires is controlled at about 1/4th of visible wavelength, promptly between 0.15～0.25um, finished surface should be smooth surface or minute surface, considers actual mark effect, between the mark degree of depth 0.2～0.35um.Material surface smooth degree height, etching are shallow, and then the figure chromatic graph is blue partially; Etching is dark, and then chromatogram is red partially; The material surface smooth degree is low, and then the figure kine bias after the mark is white.Therefore, diffraction color changing laser marking should be realized the damage of material surface, gating pulse laser energy density again simultaneously, makes working depth meet above-mentioned requirements.And the conventional laser mark degree of depth dark (＞0.1mm), the diffraction that dark excessively laser ablation does not meet striped on the contrary requires not reach the setting effect.
Certainly, for improving the quality of diffraction color changing mark, for different materials, the optical maser wavelength of employing should be with respect to the material spectrum absorption peak.As Cr, Gu, materials such as Cu and Si, some polymkeric substance etc. also can adopt two, three and the DPSSL of quadruple.The beam shaping system can be shaped to Gauss's hot spot the flatbed hot spot, and diaphragm keeps off the part edge light beam, and beam intensity ratio is more even in the luminous point, helps improving the etching homogeneity of microstructure interference fringe.
In the diffraction color changing laser marking system, adopted the two-beam interference light path, the numerical aperture of F-theta mirror is had high requirements, the mark scope there has been certain limitation.So, in a less useful area, realize the interference fringe etching by vibration mirror scanning earlier, then,, realize the etching in next zone by the X-Y two-dimensional motion, finally realize the mark purpose of large tracts of land diffraction image.
Because the utilization of technique scheme, the present invention compares with existing laser marking technology has following advantage:
1. the present invention becomes the two-beam interference laser marking with traditional single beam laser mark, thereby the mark figure that forms is the diffraction fringe structure, under the prerequisite that obtains same visual impression, can reduce etching depth, avoid improving the resolution of image for obtaining than the problem of big etching depth in the prior art in the contiguous formation of processing stand meteorite crater effect;
2. owing to adopt the two-beam interference laser marking, laser beam of the present invention is a single mode, can realize that better light beam focuses on, and further improves the resolution of image;
3. the present invention has adopted single transverse mode lasers and interferometric optical head, has guaranteed that two-beam forms interference effect, adjusts the control bundle energy by electric current, thus the degree of depth of control etching; By optical shaping system, make the interior light distribution of luminous point even, satisfy the even requirement of striped of micron order etching processing;
4. when adopting ultraviolet light output,, can guarantee only to carry out a photoetching, avoid the generation of " meteorite crater " effect at same position by the control of control system to the TTL signal;
5. select the grating of different fringe period, etching optical dispersion effect will be different, the grating that the cycle is little, and image is beautiful in colour after the etching, the grating that the cycle is big, the light intensity after the etching changes obviously.
Description of drawings
Accompanying drawing 1 is a grating pair white light chromatic dispersion synoptic diagram of the present invention.
Accompanying drawing 2 is a quartzy phase grating structural representation in the embodiment of the invention one.
Accompanying drawing 3 interferes the light after the etching to become figure (a); Microstructure microphoto (c), (d) of grating fringe synoptic diagram (b) in the luminous point and actual different striped orientations after mark.
Accompanying drawing 4 is the structural representation of etching marking system in the embodiment of the invention one;
Accompanying drawing 5 is the structural representation of marking system in the embodiment of the invention two;
Accompanying drawing 6 among the present invention by interfering rectangular light after the etching to become microstructure microphoto (c), (d) that grating fringe synoptic diagram (b) in figure (a), the luminous point and actual different stripeds after the mark of metal surface are orientated.
Accompanying drawing 7 is the Optical Variable Imaging that has four angles of orientation among the present invention, (a) pattern of the grey scale change effect after striped orientation synoptic diagram (b) etching.
Wherein: 1, LASER Light Source; 2, beam expander; 3, variable rectangular diaphragm and spot shaping device; 4, quartz lens; 5, catoptron; 6, beam splitter; 7, turntable; 8, imaging len; 9, F-theta lens; 10,2 dimension galvanometers; 11, material; 12, platform; 13, kinematic system control system; 14, computing machine.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: shown in accompanying drawing 4, a kind of method for making of grating variable color image converts image distribution to pulse control signal, according to the orientation of unit grating wherein and frequently empty, carry out interferometric optical head, platform motion, grating rotating and light pulse input simultaneously, in the material surface etching.
By LASER Light Source 1, beam expander 2, spot shaping device 3, variable rectangular stop imagery system 4,5,6 ( lens 4,6 constitute the 4F system of miniature function with diaphragm), divided beam system (comprising quartzy phase grating of beam splitting element and turntable 7, imaging lens group 8, F-theta lens 9), the above-mentioned interfere type optical head that constitutes by light source, beam shaping, divided beam system, insert 2 dimension galvanometers 10 in the middle of imaging lens group 8,9, material 11 is placed on two-dimentional workbench 12 and comprises TTL and power supply, kinematic system control system 13, the computing machine 14 of power control.Wherein, quartzy phase grating is referring to shown in the accompanying drawing 2.
Described light source 1 can be a ultraviolet output pulsed laser light source; Described rectangular aperture can be regulated.Described beam splitter is placed on the turntable, and turntable can rotate the phase grating of selecting different fringe period, thereby changes the interference of light angle; Described recording materials 11 are placed on the workbench 12 and are positioned on the focal plane of interfering beam; Described beam shaping system comprises adjustable rectangular aperture 3, lens 4, catoptron 5 and lens 6, and described beam splitting interference system is focused at the diffraction light of phase grating on the workpiece material 11.
In the present embodiment, the crossing spot definition of interfering beam is 20～160 microns; Intersecting the light angle can change between 1 ° to 20 °, and material 11 can be metal or the polymeric material that ultraviolet is had stronger absorption.
Intersecting the light angle can change between 10 ° to 20 °, the focal length 50mm of F-theta mirror, bore 30mm, scan rate of vibrating mirror 1-6m/s, sweep limit 10mm * 10mm forms the regional area etching, finish a regional area etching after, run to next regional area by platform, finally form than large format etching image.
Embodiment two: shown in accompanying drawing 5, a kind of realization laser ablation marking system, comprise by the DPSSL LASER Light Source 1 with TTL signaling interface, beam-expanding collimation mirror 2, iris and shaper 3, quartz lens 4 (object lens), catoptron 5 and F-theta lens 9 and form the 4F system jointly, rectangular aperture is become a reduced image on recording materials 11 surfaces.Because the position of beam splitting element is irrelevant with the shape of final luminous point, so beam splitting element is as far as possible near lens 4, so that the optical beam ratio on semi-transparent semi-reflecting beam splitter 14 is bigger.By catoptron 15,16,17 reflections,, the directional light after the beam splitting is focused on the material 11 after the beam splitting through imaging lens group 10.
The above-mentioned interfere type optical head that is made of LASER Light Source, beam splitting element, imaging system, material 11 is placed on the workbench 12, TTL and power control power supply 13, kinematic system control system and computing machine and related software 14.
In the present embodiment, intersect the big I of luminous point and change between the 40-160 micron, the shape that intersects luminous point can be round dot, rectangle, because the restriction of prism dimensions, intersecting the light angle can change between 10 ° to 20 °, adopts the prism beam-splitting method to be fit to and the image that produces the large period striped.Material 11 is metal or the polymeric materials that laser light had stronger absorption spectra, and the output energy of adjusting light makes finally and to be higher than damage threshold on the beam splitter in the beam energy density on the material.Quartzy object lens 4 constitute the 4F system with the F-theta lens, and the focal length of object lens finally forms the reduced image of diaphragm greater than the focal length of lens combination on surface of the work, and this design helps reducing the damage of light beam to beam splitter.
Embodiment three: on the basis of embodiment one, iris is reached minimum, beam splitting element rotates to blank space, not beam split of laser beam directly sees through imaging lens group, and the luminous point that focuses on the material is adjusted to the 2-50 micron, improve the repetition frequency of pulse laser beam, marking system can carry out the two-dimensional vector figure directly to be write, and system becomes single beam precise laser straight-writing system, can carry out the photoengraving of precision circuit plate, mask.The etching system of present embodiment, general structure is identical with embodiment one, and lens 9 adopt shorter focal length (microcobjective of high-NA).
Embodiment four: on the basis of embodiment one, select 20 microns position phase beam-splitting optical grating for use, then the fringe period after the etching is 10 microns, this cord is less to the dispersive power of light, but good directed diffraction characteristic is arranged, if the steering angle of grating is Φ, accompanying drawing 5 has the variable optical imagery of big fringe period gray scale of four grating angles of orientation.(a) image of the grey scale change after orientation synoptic diagram (b) etching.
Embodiment five: on the basis of embodiment one, be example to carry out etching on the Metal Cr surface, the method for diffraction color changing mark is described:
1, laser beam energy: the characteristics of crome metal Cr are: hardness height, wear-resistant, be processed into minute surface easily, and about 20%, therefore, the etching thermal effect is low on Cr in theory for the reflectivity under 355nm.Experiment shows that the energy of laser beam reaches＞0.5mJ, pulse width 20ns-40ns, and when focusing on 160 microns luminous points, the about 1.95J/cm of luminous point energy density
2, can be at Cr surface etch micron order striped.Consider the adjustment of light path energy loss and spot size, answer＞2J/cm in the energy density of material surface laser spots
2
2, galvanometer speed: can judge the process velocity that such scheme can be supported.If interfere luminous point striped orientation perpendicular to direction of motion, laser pulse width is t, and the speed of related movement of luminous point and material is v, in theory, luminous point internal interference striped is the bright concealed wire bar that one group of spacing equates, a bright fringes and a dark fringe are formed a fringe period d, if adding man-hour, the displacement of bright concealed wire bar just equals d/2, then can not form the processing of striped on material fully, the interference fringe displacement should be satisfied＜the d/8 cycle, like this, v should for
v≤d/(8t)
If d=1 μ is m, t=20ns, then v≤6.25m/s.In DPSSL, adopted Q modulation switch and TTL interface, by the TTL control signal that computing machine sends, the output of control laser pulse.Like this, system moves continuously, the photetching control mode of monopulse input, light pulse of each etching point correspondence, spot definition D, pulsed frequency f and systematically travelling speed v mate mutually, not overlapping between the luminous point, promptly satisfy f=v/D.
3, mechanical precision requires: platform will cause the overlapping region of two light beams to descend perpendicular to the vibration of interfering beam.If the interference light wavelength X, the lap ratio of two light beam spots is c, then beam splitting angle θ and allow the up-down vibration amplitude A to be,
θ＝2sin
-1[λ/(2d)]
A＝(1-c)D/(2tan(sin
-1[λ/(2d)]))
If c=0.7, D=40um, d=1um, λ=355nm, A=34um then allows mechanical activation amplitude degree ± 34 microns, when D=80um, A=± 68um then.
4, the numerical aperture of F-theta mirror and galvanometer size:
With vibration mirror scanning scope 10mm * 10mm scope, fringe period d=1um is an example, considers the size of luminous point on the camera lens surface, and the focal length of getting the F-theta mirror is 50mm, and then the bore of F-theta mirror must be to greater than 30mm; The focal length of getting the F-theta mirror is 100mm, and then the bore of F-theta mirror must be to greater than 50mm.
Aforementioned calculation as can be known, the fringe period of etching more than 4 microns, to the optical texture of system, especially the requirement to F-theta mirror and galvanometer all can reach, the fringe period of etching 1-3 micron is to having higher technical requirement to F-theta mirror and galvanometer.
5, the fringe period d of diffraction color changing mark and color changeable effect
Be located under the white light, the one-level diffraction of light angle of grating is φ, and then the angular dispersion rate of grating can be by following equation expression:
(Δφ/Δλ)＝1/[dcosφ]＝1/[d(1-(λ/d)
2)
1/2]
| Fringe period d (um) | 1 | 2 | 4 | 8 | 16 |
| Angular dispersion rate Δ φ/Δ λ (r/um) | 1.2 | 0.5 | 0.25 | 0.125 | 0.067 |
| Δφ(Δλ＝100nm)(degree) | 6.8 | 2.9 | 1.4 | 0.7 | 0.03 |
Under the 100nm wavelength interval, d=1, the chromatic dispersion during 2um is very strong, d=8, the chromatic dispersion of 16um is very little, is bordering on white light.But the grating diffration efficient that fringe period is big is relevant with etching depth, and is irrelevant with fringe period.Therefore, available large period grating carries out beam splitting, selects the gray-scale value of different orientation grating corresponding to image, and the image intensity that can form after the etching changes obviously; Adopt the minor cycle raster beam-splitting, the marking image color change is gorgeous.
Claims (6)
1. diffraction color changing laser marking method, it is characterized in that: adopt the high power semi-conductor light-pumped solid state laser as light source, laser beam satisfies interferes requirement, produce beam splitting light by beam splitting element, by optical lens group luminous point is converged to material surface, form even interference fringe light field, surpass the material damage threshold value at material surface position laser power density, to form the interference fringe etching, by scan control, realize the mark of diffraction light change chromatic graph shape, described etching is, the interference fringe light field is positioned at the rectangle luminous point of material surface, adopt the output of computing machine output TTL signal controlling laser pulse, carry out single pulse processing at same position, the control laser power, in the light intensity coherent material generating gasification of interference fringe, form the interference fringe structure at material surface.
2. laser marking method according to claim 1, it is characterized in that: described scan control is two-stage control, and the surface for the treatment of mark is divided into the combination of a plurality of zonules, and galvanometer is set in light path, in each zonule, carry out the scanning interferometer laser ablation by the control galvanometer; After the etching of finishing a zonule, by the platform move mode, enter the etching of next zonule, realize the interference mark on whole surface successively; In the mark process, by changing the direction of beam splitting element, change the interference fringe orientation, thereby realize the interference light etching mark of diffraction light change chromatic graph shape.
3. laser marking method according to claim 1 is characterized in that: the etching depth of described interference fringe is 0.2～0.35um.
4. diffraction color changing laser marking device, comprise optical head, galvanometer, F-θ mirror, motion platform and control system, it is characterized in that: described optical head is the interfere type optical head, be made of light source, beam shaping and interference optics, described light source is made up of diode pumped solid state laser, collimating mirror group and the power supply of accepting the TTL signal controlling; Described beam shaping comprises adjustable rectangular aperture and lens combination, and described interference optics comprises beam splitting element, image optics lens combination; The light path that each arrangements of components constitutes meets the optical interference imaging requirements, the interference fringe light field of formation be positioned at be placed on described motion platform treat the mark material surface.
5. laser mark printing device according to claim 4 is characterized in that: the angle of the light beam beam splitting of described beam splitting element from 5 spend to 35 the degree, the numerical aperture of described image optics lens combination is 0.2～0.5, beam splitting element is selected from phase grating or beam splitter prism.
6. laser mark printing device according to claim 5 is characterized in that: described beam splitting element is a phase grating, and the material of grating substrate is fused quartz or calcium fluoride.
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2007
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