CN100586838C - Distributed micromotor system phase shifter chip scale micro-packing component - Google Patents
Distributed micromotor system phase shifter chip scale micro-packing component Download PDFInfo
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- CN100586838C CN100586838C CN200710144470A CN200710144470A CN100586838C CN 100586838 C CN100586838 C CN 100586838C CN 200710144470 A CN200710144470 A CN 200710144470A CN 200710144470 A CN200710144470 A CN 200710144470A CN 100586838 C CN100586838 C CN 100586838C
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- metal interconnecting
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- phase shifter
- planar waveguide
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Abstract
A distributed micro-electromechanical system phase shifter chip-level mini-package component relates to a micro-electromechanical system (MEMS) phase shifter chip-level mini-package component. The invention aims to solve problems in a prior bonding approach, such as parasitic effect, strong mutual interference, size and loss increment of a device, occurrence of shape distortion, complicated preparation process and air pollution. A sealing insulation medium package body of the invention is provided with up-down communicated holes; a sealant layer is fixed on an upper surface of the sealing insulation medium package body; the sealing insulation medium package body is made up of polyimide, silicon nitride or silicon dioxide materials; and the thickness (t) of the sealing insulation medium package body is 5-20 Mu m. The invention is operated at 10-50GHz microwave frequency range. And the invention has the advantages of low parasitic effect and mutual interference, good process compatibility, simple process, and small size without shape distortion and air pollution. The insertion loss of the invention is less than -0.2dB, the reflection coefficient is lower than minorq20dB, and the phase shift also has excellent linear relationship.
Description
Technical field
The present invention relates to a kind of MEMS (MEMS) phase shifter chip scale micro-packing component.
Background technology
Phase shifter is a most important parts in the core component in phased-array radar, satellite communication, the mobile communication equipment, its working band, inserts loss and directly affects the antijamming capability of these equipment and weight, volume and the cost of sensitivity and system.At present, both at home and abroad the researcher has developed and has been applicable to millimeter wave miniaturized, low-power consumption and distributed MEMS phase shifter cheaply.But,, make the commercialization of distributed MEMS phase shifter be subjected to serious obstruction because the distributed MEMS phase shifter encapsulating structure can not provide favorable mechanical support and environmental protection, superior electric interconnection and heat radiation, stable radio-frequency performance or the like.At present, the distributed MEMS phase shifter wafer-level package mainly adopts traditional bonding techniques, i.e. the encapsulation caps made from materials such as ceramic material, alloy material, metal, glass or silicon on distributed MEMS phase shifter silicon substrate bonding.Because traditional bonding method needs metal o-ring, binder or high voltage direct current and substrate to aim at encapsulation caps, cause various bad additive effects easily, strong with mutual interference mutually as ghost effect, as to increase device volume and loss, shape distorts, complicated process of preparation and gaseous contamination.In addition, owing to need high temperature in the bonding encapsulation process, when temperature-sensitive material was used in the distributed MEMS phase shifter, traditional bonding techniques all can not adopt.
Summary of the invention
The objective of the invention is to have for solving existing bonding method that ghost effect distorts with mutual interference volume and loss, shape strong, that increase device mutually, the problem of complicated process of preparation and gaseous contamination, a kind of distributed micromotor system phase shifter chip scale micro-packing component now is provided.The present invention is by substrate 1, the first co-planar waveguide ground wire 2, insulating medium layer 3 on the holding wire, the second co-planar waveguide ground wire 4, the parts with microstructure 5 of phase shifter, first metal interconnecting wires 6, second metal interconnecting wires 7, the 3rd metal interconnecting wires 8, sealed insulation medium packaging body 9, the 4th metal interconnecting wires 10, five metals belongs to interconnection line 11, the 6th metal interconnecting wires 12, co-planar waveguide holding wire 13 and sealant layer 15 are formed, first metal interconnecting wires 6, second metal interconnecting wires 7 and the 3rd metal interconnecting wires 8 equidistantly are arranged on the right side in the substrate 1, the 4th metal interconnecting wires 10, five metals belongs to interconnection line 11 and the 6th metal interconnecting wires 12 and equidistantly is arranged on left side in the substrate 1, the first co-planar waveguide ground wire 2, the second co-planar waveguide ground wire 4 and co-planar waveguide holding wire 13 threes are arranged in parallel on substrate 1, the two ends of the first co-planar waveguide ground wire 2 are connected with the 6th metal interconnecting wires 12 with first metal interconnecting wires 6 respectively, the two ends of the second co-planar waveguide ground wire 4 are connected with the 4th metal interconnecting wires 10 with the 3rd metal interconnecting wires 8 respectively, the two ends of co-planar waveguide holding wire 13 belong to interconnection line 11 with second metal interconnecting wires 7 with five metals respectively and are connected, 3 of insulating medium layers are fixed on the upper surface of the co-planar waveguide holding wire 13 under the parts with microstructure 5 of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire 4 with the first co-planar waveguide ground wire 2 respectively in the two ends of parts with microstructure 5 lower surfaces of phase shifter, sealed insulation medium packaging body 9 is arranged on the outside of the parts with microstructure 5 of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire 4 with the first co-planar waveguide ground wire 2 respectively in the both sides of sealed insulation medium packaging body 9, have the hole 14 that communicates up and down on the sealed insulation medium packaging body 9, be fixed with sealant layer 15 on the upper surface of sealed insulation medium packaging body 9, sealed insulation medium packaging body 9 is by polyimides, silicon nitride or earth silicon material are made, and the thickness t at sealed insulation medium packaging body 9 middle parts is 5-20 μ m.The present invention is different with traditional bonding encapsulating structure be adopted two important techniques reduce distributed MEMS phase shifter reflection loss, insert loss, ghost effect and packaging cost, improve the compatibility of technology and the reliability of device: the reflection loss, insertion loss and the volume that one, reduce distributed MEMS phase shifter by the method that adopts low-k sealed insulation medium packaging body to substitute the encapsulation caps made from materials such as ceramic material, alloy material, metal, glass or silicon.Two, by adopting compatible MEMS technology directly on the upper surface that has the hole that communicates up and down and sealed insulation medium packaging body on the sealed insulation medium packaging body, to be fixed with little encapsulation caps that sealant layer forms, rather than the encapsulation caps that bonding is made with materials such as ceramic material, alloy material, metal, glass or silicon on the distributed MEMS phase shifter substrate.Different with traditional encapsulating structure is to eliminate bonding method to need high temperature, metal o-ring, binder or high voltage direct current and substrate to aim at encapsulation caps, thereby realize reducing the ghost effect and the mutual interference mutually of packaging cost, encapsulating structure, improve the compatibility of technology and the reliability of device.
The present invention is in the microwave frequency band work of 10～50GHz, compared with prior art, it do not increase cost, do not increase reflection loss and insert have under the prerequisite of loss that ghost effect is low, mutual interference is low mutually, processing compatibility good, shape is undistorted, technology is simple, no gaseous contamination and the little advantage of volume.Through emulation experiment, insertion loss of the present invention＜-0.2dB, reflectance factor be lower than-and 20dB, phase-shift phase also have extraordinary linear relationship, and size of the present invention is little, life-span is long, cost is low, be fit to low-cost production in enormous quantities fully, can be widely used in RF communication system and small-sized phased-array radar, the phased array antenna system, be beneficial to and apply.
Description of drawings
Fig. 1 is an overall structure schematic diagram of the present invention, and Fig. 2 is the A-A cutaway view of Fig. 1, and Fig. 3～Fig. 5 is the radio frequency simulation result schematic diagram.The numeral of figure ordinate is to insert loss, unit among Fig. 3: decibel (dB), the numeral of figure abscissa be frequency, unit: GHz; The numeral of figure ordinate is reflection loss among Fig. 4, unit: the decibel (dB), the numeral of figure abscissa be frequency, unit: GHz; The numeral of figure ordinate is phase-shifted among Fig. 5, unit: the degree, the numeral of figure abscissa be frequency, unit: GHz.
The specific embodiment
The specific embodiment one: (referring to the present embodiment of Fig. 1～Fig. 2) by substrate 1, the first co-planar waveguide ground wire 2, insulating medium layer 3, the second co-planar waveguide ground wire 4, the parts with microstructure 5 of phase shifter, first metal interconnecting wires 6, second metal interconnecting wires 7, the 3rd metal interconnecting wires 8, sealed insulation medium packaging body 9, the 4th metal interconnecting wires 10, five metals belongs to interconnection line 11, the 6th metal interconnecting wires 12, co-planar waveguide holding wire 13 and sealant layer 15 are formed, first metal interconnecting wires 6, second metal interconnecting wires 7 and the 3rd metal interconnecting wires 8 equidistantly are arranged on the right side in the substrate 1, the 4th metal interconnecting wires 10, five metals belongs to interconnection line 11 and the 6th metal interconnecting wires 12 and equidistantly is arranged on left side in the substrate 1, the first co-planar waveguide ground wire 2, the second co-planar waveguide ground wire 4 and co-planar waveguide holding wire 13 threes are arranged in parallel on substrate 1, the two ends of the first co-planar waveguide ground wire 2 are connected with the 6th metal interconnecting wires 12 with first metal interconnecting wires 6 respectively, the two ends of the second co-planar waveguide ground wire 4 are connected with the 4th metal interconnecting wires 10 with the 3rd metal interconnecting wires 8 respectively, the two ends of co-planar waveguide holding wire 13 belong to interconnection line 11 with second metal interconnecting wires 7 with five metals respectively and are connected, 3 of insulating medium layers are fixed on the upper surface of the co-planar waveguide holding wire 13 under the parts with microstructure 5 of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire 4 with the first co-planar waveguide ground wire 2 respectively in the two ends of parts with microstructure 5 lower surfaces of phase shifter, sealed insulation medium packaging body 9 is arranged on the outside of the parts with microstructure 5 of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire 4 with the first co-planar waveguide ground wire 2 respectively in the both sides of sealed insulation medium packaging body 9, have the hole 14 that communicates up and down on the sealed insulation medium packaging body 9, be fixed with sealant layer 15 on the upper surface of sealed insulation medium packaging body 9, sealed insulation medium packaging body 9 is by polyimides, silicon nitride or earth silicon material are made, and the thickness t at sealed insulation medium packaging body 9 middle parts is 5-20 μ m.The DIELECTRIC CONSTANTS of polyimides
r=3.4.The DIELECTRIC CONSTANTS of silicon nitride
r=7.5.The DIELECTRIC CONSTANTS of silica
r=2.
The specific embodiment two: (referring to the substrate 1 of the present embodiment of Fig. 1～Fig. 2) selected make (and with silicon dioxide layer) for the High Resistivity Si material, the thickness H of substrate 1 is 500 μ m, the DIELECTRIC CONSTANTS of substrate 1
rBe 11.9, the radius that first metal interconnecting wires 6, second metal interconnecting wires 7, the 3rd metal interconnecting wires 8, the 4th metal interconnecting wires 10, five metals belong to interconnection line 11 and the 6th metal interconnecting wires 12 is 10 μ m, and the distance h of the parts with microstructure of sealed insulation medium packaging body 9 and phase shifter between about in the of 5 is 50 μ m.Apply the structural deformation that DC voltage changes the parts with microstructure 5 of phase shifter by belonging between interconnection line 11 and the 6th metal interconnecting wires 12 at first metal interconnecting wires 6, second metal interconnecting wires 7, the 3rd metal interconnecting wires 8, the 4th metal interconnecting wires 10, the five metals that vertically pass substrate 1, when not applying voltage, the parts with microstructure 5 of phase shifter keeps normal condition, and the parts with microstructure 5 of phase shifter produces deformation after applying voltage.
Claims (8)
1, a kind of distributed micromotor system phase shifter chip scale micro-packing component, it is by substrate (1), the first co-planar waveguide ground wire (2), insulating medium layer (3), the second co-planar waveguide ground wire (4), the parts with microstructure of phase shifter (5), first metal interconnecting wires (6), second metal interconnecting wires (7), the 3rd metal interconnecting wires (8), sealed insulation medium packaging body (9), the 4th metal interconnecting wires (10), five metals belongs to interconnection line (11), the 6th metal interconnecting wires (12), co-planar waveguide holding wire (13) and sealant layer (15) are formed, first metal interconnecting wires (6), second metal interconnecting wires (7) and the 3rd metal interconnecting wires (8) equidistantly are arranged on the right side in the substrate (1), the 4th metal interconnecting wires (10), five metals belongs to interconnection line (11) and the 6th metal interconnecting wires (12) equidistantly is arranged on the interior left side of substrate (1), the first co-planar waveguide ground wire (2), the second co-planar waveguide ground wire (4) and co-planar waveguide holding wire (13) three are arranged in parallel on substrate (1), the two ends of the first co-planar waveguide ground wire (2) are connected with the 6th metal interconnecting wires (12) with first metal interconnecting wires (6) respectively, the two ends of the second co-planar waveguide ground wire (4) are connected with the 4th metal interconnecting wires (10) with the 3rd metal interconnecting wires (8) respectively, the two ends of co-planar waveguide holding wire (13) belong to interconnection line (11) with second metal interconnecting wires (7) and five metals respectively and are connected, insulating medium layer (3) only is fixed on the upper surface of the co-planar waveguide holding wire (13) under the parts with microstructure (5) of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire (4) with the first co-planar waveguide ground wire (2) respectively in the two ends of the parts with microstructure of phase shifter (5) lower surface, sealed insulation medium packaging body (9) is arranged on the outside of the parts with microstructure (5) of phase shifter, fixedly connected with the upper surface of the second co-planar waveguide ground wire (4) with the first co-planar waveguide ground wire (2) respectively in the both sides of sealed insulation medium packaging body (9), it is characterized in that having on the sealed insulation medium packaging body (9) hole (14) that communicates up and down, be fixed with sealant layer (15) on the upper surface of sealed insulation medium packaging body (9), sealed insulation medium packaging body (9) is by polyimides, silicon nitride or earth silicon material are made, and the thickness t at sealed insulation medium packaging body (9) middle part is 5-20 μ m.
2, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the DIELECTRIC CONSTANTS of polyimides
r=3.4.
3, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the DIELECTRIC CONSTANTS of silicon nitride
r=7.5.
4, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the DIELECTRIC CONSTANTS of silica
r=2.
5, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1, the thickness (H) that it is characterized in that substrate (1) is 500 μ m.
6, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the DIELECTRIC CONSTANTS of substrate (1)
rBe 11.9.
7, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the radius that first metal interconnecting wires (6), second metal interconnecting wires (7), the 3rd metal interconnecting wires (8), the 4th metal interconnecting wires (10), five metals belong to interconnection line (11) and the 6th metal interconnecting wires (12) is 10 μ m.
8, distributed micromotor system phase shifter chip scale micro-packing component according to claim 1 is characterized in that the gap h between the upper surface of parts with microstructure (5) of the lower surface at sealed insulation medium packaging body (9) middle part and phase shifter is 50 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN200710144470A CN100586838C (en) | 2007-10-19 | 2007-10-19 | Distributed micromotor system phase shifter chip scale micro-packing component |
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|---|---|---|---|
| CN200710144470A CN100586838C (en) | 2007-10-19 | 2007-10-19 | Distributed micromotor system phase shifter chip scale micro-packing component |
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| Publication Number | Publication Date |
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| CN101143706A CN101143706A (en) | 2008-03-19 |
| CN100586838C true CN100586838C (en) | 2010-02-03 |
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| WO2023122887A1 (en) * | 2021-12-27 | 2023-07-06 | 京东方科技集团股份有限公司 | Phase shifter and preparation method therefor, and phased array antenna |
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2007
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Non-Patent Citations (4)
| Title |
|---|
| 基于Ka波段分布式MEMS移相器芯片微封装研究. 贺训军等.仪器仪表学报，第28卷第1期. 2007 |
| 基于Ka波段分布式MEMS移相器芯片微封装研究. 贺训军等.仪器仪表学报，第28卷第1期. 2007 * |
| 射频MEMS封装技术. 付佳辉等.电子器件，第27卷第1期. 2004 |
| 射频MEMS封装技术. 付佳辉等.电子器件，第27卷第1期. 2004 * |
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