CN100590898C - Positive electrode for semiconductor light-emitting device - Google Patents
Positive electrode for semiconductor light-emitting device Download PDFInfo
- Publication number
- CN100590898C CN100590898C CN200580025689A CN200580025689A CN100590898C CN 100590898 C CN100590898 C CN 100590898C CN 200580025689 A CN200580025689 A CN 200580025689A CN 200580025689 A CN200580025689 A CN 200580025689A CN 100590898 C CN100590898 C CN 100590898C
- Authority
- CN
- China
- Prior art keywords
- layer
- positive electrode
- light emitting
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bondingpad electrode has a reflecting layer that is in contact with at least the transparent electrode.
Description
The cross reference of related application
The application is based on the application that 35U.S.C. § 111 (a) submits to, according to 35U.S.C. § 119 (e) (1), requires the provisional application No.60/599 in submission on August 9th, 2004 according to 35U.S.C. § 111 (b), 571 priority.
Technical field
The present invention relates to a kind of positive electrode that is used for light emitting semiconductor device, more specifically, relate to a kind of transparent positive electrode that is suitable under low driving voltage, to launch the gallium-nitride-based compound semiconductor light emitting element of high light.
Background technology
In recent years, GaN based compound semiconductor material has become as the focus that is used for the semi-conducting material of short-wave long light-emitting device.By the technology of for example metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), this GaN based compound semiconductor is formed on the substrate (for example, oxide monocrystal such as sapphire single-crystal or III-V compounds of group monocrystalline).
A property feature of this GaN based compound semiconductor material is that along the direction that is parallel to light-emitting area, the diffusion of electric current is little.The electric current diffusion of this difference is attributable to the existence of a large amount of screw thread dislocations (threading dislocations), and the screw thread dislocation exists in the whole epitaxial crystal from bottom surface (substrate side) to end face.Yet this reason is not explained as yet in detail.Simultaneously, p type GaN based compound semiconductor has the high resistivity of resistivity than n type GaN based compound semiconductor.Therefore, when stacked metal level on the surface of p type GaN based compound semiconductor layer, along the direction that is parallel to p type layer the electric current diffusion does not take place basically.Thereby when being tied by this semi-conductive pn when making the LED structure, the light emission is limited to the only part below positive electrode.
In order to overcome above-mentioned shortcoming, use such transparent positive electrode usually, by this transparent positive electrode, extract the light of the part emission below positive electrode.Particularly, in a kind of technology that is used for commercial opaque products that has proposed, the a plurality of Ni layers and the Au that respectively have tens nm thickness are stacked on the p type layer layer by layer to form stacked layer, and this layer of heating to be becoming alloy in oxygen-containing atmosphere, thus promoted p type layer resistance reduction and formed positive electrode (referring to Japanese Patent No. No.2803742) simultaneously with good transparency and ohm property.
Material by for example conducting metal oxide or ultrathin metallic film is made transparency electrode.Be difficult to directly engage with this material or structure.Therefore, usually, joint liner (bonding pad) electrode with adequate thickness is set, makes between pad electrode and transparency electrode, to set up to electrically contact.Yet because its big relatively thickness, the metal gasket electrode does not present the transparency, and the light of the emission of the part below pad electrode can not be extracted the outside, and this has formed problem.
In the prior art constructions of the tack that improves pad electrode, partly excise transparency electrode, and pad electrode is set so, so that the transparency electrode that bridge joint is adjacent, thereby by having improved bond strength with part that the GaN semiconductor layer directly contacts, make with part that transparency electrode contacts in electric current diffusion (referring to Japanese Patent Application Laid-Open (kokai) No.7-94782) takes place.
As mentioned above,, developed the technology that is used for effectively utilizing electric current, wherein be injected in this part, avoided the light emission in the part below pad electrode by suppressing electric current because the light of the emission of the part below pad electrode can not be extracted the outside.
Particularly, disclose some and effectively obtained photoemissive technology, wherein by insulating regions is set below pad electrode, has suppressed electric current and be injected in the part below the liner (referring to Japanese Patent Application Laid-Open (kokai) No.8-250768 and No.8-250769).Also disclose and be used for suppressing the technology that electric current is injected into the part below the pad electrode, wherein by having the bottom (referring to Japanese Patent Application Laid-Open (kokai) No.10-242516) that forms pad electrode with respect to the metal of the high contact resistance rate of p type layer.
Yet, to expose by the research that the inventor carries out, the employing of any above-mentioned technology has reduced the ohmic contact area of positive electrode with respect to p type layer, thereby has improved driving voltage with being a problem.
Summary of the invention
Carried out the present invention for addressing the above problem, and an object of the present invention is to provide a kind of transparent positive electrode that is used for the face up type chip, even use low driving voltage, this chip also can be launched high light.Term used herein " transparency " is meant the transparency to the light with the wavelength in the emission wavelength ranges of falling within.Under the situation of gallium nitride base light-emitting device, emission wavelength ranges is generally 300 to 600nm.
The invention provides following aspect.
(1) a kind of positive electrode that is used for light emitting semiconductor device, described electrode comprises the transparency electrode that is formed on the semiconductor layer, and being formed on joint liner electrode on the described transparency electrode, wherein said joint liner electrode has the reflector that contacts with described transparency electrode at least.
(2) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (1), wherein described reflector and the adhesive strength between the described transparency electrode as peel strength is not less than 490mN (50gf).
(3) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (1) or (2), wherein has 60% transmissivity for the described transparency electrode of the light with the wavelength in the emission wavelength ranges that falls within described light emitting semiconductor device.
(4) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (3), wherein said reflector is by the metal that is selected from Al, Ag, Pt family metal and contain Al, Ag and the alloy of at least a metal of Pt family metal constitutes.
(5) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (4), wherein said light emitting semiconductor device is a gallium-nitride-based compound semiconductor light emitting element.
(6) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (5), wherein said reflector is made of metal that is selected from Al, Ag, Pt and the alloy that contains at least a metal of Al, Ag and Pt.
(7) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (6), wherein said reflector has 20 to 3, the thickness of 000nm.
(8) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (7), wherein said joint liner electrode has a layer structure, and except described reflector, also comprise barrier layer that constitutes by Ti, Cr or Al and/or the superiors that constitute by Au or Al.
(9) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (8), wherein said transparency electrode comprises the layer that is made of metal in described joint liner electrode side.
(10) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (8), wherein said transparency electrode comprises the layer that is made of transparent material in described joint liner electrode side.
(11) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (10), wherein said transparency electrode only is made of the conductive transparent material except metal.
(12) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (11), wherein radiative operation is extracted in the upper space of described transparency electrode.
(13) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (12), the upper space of wherein said transparency electrode is formed by transparent material.
(14) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (1) to (13), wherein said transparency electrode has the contact layer that contacts with the p type semiconductor layer, and is arranged on the current-diffusion layer on the described contact layer.
(15) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (14), wherein said contact layer is made of platinum group metal or its alloy.
(16) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (15), wherein said contact layer is made of platinum.
(17) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (14) to (16), wherein said contact layer has 0.1 to 7.5nm thickness.
(18) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (17), wherein said contact layer has 0.5 to 2.5nm thickness.
(19) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (14) to (18), wherein said current-diffusion layer is made of the metal that is selected from gold, silver and copper or is made of the alloy of at least a metal that contains gold, silver and copper.
(20) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (19), wherein said current-diffusion layer is made of gold or billon.
(21) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (14) to (20), wherein said current-diffusion layer has 1 to 20nm thickness.
(22) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (21), wherein said current-diffusion layer has 3 to 6nm thickness.
(23) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (14) to (18), wherein said current-diffusion layer is made of conductive transparent material.
(24) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (10), (11), (13) and (23), wherein said transparent material is to be selected from ITO, zinc oxide, zinc oxide aluminum, the tin oxide of mixing F, titanium oxide, zinc sulphide, bismuth oxide and magnesian at least a material.
(25) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (24), wherein said transparent material is at least a material that is selected from ITO, zinc oxide, zinc oxide aluminum and mixes the tin oxide of F.
(26) according to each the positive electrode that is used for light emitting semiconductor device in above-mentioned (10), (11), (13) and (23) to (25), wherein said transparent material has 10 to 5, the thickness of 000nm.
(27) according to the positive electrode that is used for light emitting semiconductor device of above-mentioned (26), wherein said transparent material has 100 to 1, the thickness of 000nm.
(28) a kind of light emitting semiconductor device, it adopts according to each positive electrode in above-mentioned (1) to (27).
(29) a kind of gallium-nitride-based compound semiconductor light emitting element comprises: substrate; N type semiconductor layer, luminescent layer and p type semiconductor layer, these layers form on described substrate and by the gallium nitride-based compound semiconductor layer with this sequential cascade; Be arranged on the positive electrode on the described p type semiconductor layer; And being arranged on negative electrode on the described n type semiconductor layer, wherein said positive electrode is according to each positive electrode in above-mentioned (1) to (27).
(30) a kind of lamp, it adopts the luminescent device according to above-mentioned (28) or (29).
According to the present invention, the joint liner electrode that makes electric current flow to transparency electrode has the reflector that contacts with transparency electrode at least, thereby can reduce by the caused radiative decay of the light absorption at the interface between joint liner electrode and transparency electrode.Thereby, can improve radiative extraction efficiency and intensity.
Description of drawings
Fig. 1 is the schematic sectional view that adopts the luminescent device of positive electrode of the present invention;
Fig. 2 adopts positive electrode of the present invention and the schematic sectional view of the gallium-nitride-based compound semiconductor light emitting element of manufacturing in example; And
Fig. 3 adopts positive electrode of the present invention and the schematic plan view of the gallium-nitride-based compound semiconductor light emitting element of manufacturing in example.
Embodiment
Fig. 1 is the schematic sectional view that adopts the luminescent device of positive electrode of the present invention.Reference number 10 expressions positive electrode of the present invention, it is made of transparency electrode (11) and joint liner electrode (13).Transparency electrode (11) for example is made of contact layer (111) and current-diffusion layer (112).Joint liner electrode (13) for example is made of reflector (131), barrier layer (132) and the superiors (133); That is, has three-decker.Reference number 1 expression substrate, 2 expression GaN based compound semiconductor layers, it is made of n type semiconductor layer (3), luminescent layer (4) and p type semiconductor layer (5), 6 expression resilient coatings, and 20 represent negative electrodes.
In having the face up type chip of transparent positive electrode, the light of launching from luminescent layer (4) only extracts by the side of chip and by the transparency electrode that is not engaged the pad electrode covering.
By adopting positive electrode of the present invention, be used as reflector (131) reflection of the lower surface (that is the surface that contacts with transparency electrode) of joint liner electrode towards the light of joint liner electrode (13) emission.Some reflection rays are scattered along horizontal direction or incline direction, and other light is reflected to the part below the joint liner electrode.The light that is scattered along horizontal direction or incline direction is extracted the outside by the side of chip, and the lower surface of the light that is reflected to the part below the joint liner electrode by chip be by further scattering or reflection, and the side by chip and (not covered by the pad electrode) part by transparency electrode extract.
Reflector as such setting of the bottom of joint liner electrode makes the light of surface launching under the joint liner electrode be extracted the outside, thereby obtains high emission intensity.Comparatively speaking, when the bottom absorbing light of joint liner electrode, in fact the light of surface launching absorbed by the bottom of pad electrode under the joint liner electrode, and be not extracted the outside.
In order to obtain effect of the present invention really, must make the reflector directly contact transparency electrode.As a result, the reflector is firmly adhered on the transparency electrode, so that the joint liner electrode has enough intensity.In the method for routine, spun gold is being connected in the step of joint liner electrode, the joint liner electrode must not peeled off from transparency electrode.Thereby, preferably be not less than 490mN (50gf) as the reflector of peel strength and the adhesive strength of transparency electrode.More preferably be not less than the peel strength of 784mN (80gf), most preferably be not less than the peel strength of 980mN (100gf).In order to improve the adhesive strength of reflector and transparency electrode, for example, there is such method, wherein after forming the reflector, anticipate the surperficial of transparency electrode or heat-treat.
The reflectivity in the reflector that changes according to the material that forms the reflector is preferably 60% or higher, and more preferably 80% or higher, further more preferably 90% or higher.
Utilize for example spectrophotometric equipment can easily determine reflectivity.Yet, the very difficult reflectivity of determining the joint liner electrode, this is because electrode itself has very little surface area.Thus, in a kind of optional method, during forming the joint liner electrode, in reative cell, provide wide, the transparent empty substrate that for example forms by glass.Determine the reflectivity of the joint liner electrode on the empty substrate.
The reflector of joint liner electrode is preferably formed by the metal with high reflectance.Particularly, the reflector is preferably by for example platinum group metal of Pt, Rh, Ru or Ir; Al; Ag; Or the alloy that contains at least a metallic element that is selected from these metals forms.In these metals, Al, Ag, Pt and the alloy that contains at least a metallic element that is selected from these metals be usually as electrode material, thereby be preferred from availability, viewpoint easy to operate etc.
Do not form therein under the situation of opening or window, on transparency electrode, directly form the joint liner electrode.When the joint liner electrode was set on transparency electrode, the ohmic contact area did not reduce, even and in the part below the joint liner electrode, the contact resistance of electrode does not increase yet.Thereby, can prevent the increase of driving voltage.In addition, owing to, can suppress too much light absorption by reflecting as the reflector on the bottommost surface of joint liner electrode by the light of transparency electrode.
Any position on transparency electrode can form the joint liner electrode.For example, can from negative electrode farthest the position or form the joint liner electrode in the center of chip.Yet the joint liner electrode that forms in the position of excessively close negative electrode is not preferred, and this is owing between joint aging time, may be short-circuited between wire (wire) or the ball (ball).
The joint liner electrode preferably has big as far as possible surface area, so that bonding operation.Yet because surface area becomes big, radiative extraction is suppressed.As a result, the output of chip significantly descends.For example, when the chip surface area that surpasses half was coated with pad electrode, radiative extraction was suppressed, and causes exporting remarkable decline, and when the surface area of pad electrode was too small, it is difficult that bonding operation becomes, and causes output to reduce.Thus, the surface area of preferred pad electrode is a bit larger tham the diameter of engage ball (bondingball).Usually, pad electrode has the plane graph that its diameter is about the circle of 100 μ m.
Under the situation about being formed by high-reflectivity metal in the reflector of joint liner electrode, the thickness in reflector is preferably 20 to 3,000nm.Cross when thin when the reflector, can not obtain sufficient reflection, and when thickness is excessive, form the required cycle stretch-out in reflector, and the material cost increase; That is, do not provide advantage.More preferably, thickness is 50 to 1, and 000nm is wherein most preferably 100 to 500nm.
The joint liner electrode can only be formed by above-mentioned high-reflectivity metal.In other words, the joint liner electrode can only be made of the reflector.Simultaneously, the joint liner electrode of various materials and structure is known.Thereby, can above-mentioned reflector be set in the semiconductor layer side (that is, in the transparency electrode side) of any known joint liner electrode.Alternatively, can substitute the bottom (in semiconductor layer side) of any known joint liner electrode with above-mentioned reflector.
Under the situation of this stepped construction of joint liner electrode, the laminated portions on the reflector there is not specific restriction, can adopt the laminated portions of any structure.In the joint liner electrode of stepped construction, the layer that is provided with on the reflector plays the important function of the intensity that improves whole joint liner electrode.Thereby this layer must be by having that high-intensity relatively metal material forms or must be enough thick.From this viewpoint, Ti, Cr and Al are desirable material.Among them, from the preferred Ti of the viewpoint of the strength of materials.Strengthened at this layer under the situation of joint liner electrode, this layer is called " barrier layer ".
The reflector also can be used as the barrier layer.High reflectance and high-intensity metal material form and when having big thickness, do not need to form extra barrier layer by having when the reflector.For example, when the reflector is formed by Al, do not need the barrier layer.
The barrier layer preferably has 20 to 3, the thickness of 000nm.Cross when thin when the barrier layer, the effect that improves intensity is not enough, and when this layer is blocked up, does not obtain special advantage, the only increase of incurred cost.More preferably, thickness is 50 to 1, and 000nm most preferably is 100 to 500nm.
The superiors of joint liner electrode (opposition side in the reflector) are preferably formed by the material that joins engage ball securely to.Engage ball is made of gold usually, and Au and the known good joint performance that has golden engage ball of Al.Among them, preferred especially gold.The superiors preferably have 50 to 1, the thickness of 000nm, and more preferably 100 to 500nm.When the superiors are crossed when thin, be not enough to the joint performance of engage ball, and when this layer is blocked up, do not obtain special advantage, only be to have increased cost.
The transparency electrode that forms on the p type semiconductor layer satisfies the needs on the performance.The example of preferred performance comprises with the low contact resistance of p type layer, good optical transmission (being under the situation of the mount type that faces up that wherein is extracted out by the electrode side from the light of photophore layer emission at luminescent device) and is used in whole p type layer the good conductivity of dissufion current equably.
The transparency electrode of various materials and structure has been known, can adopt any known transparency electrode in the present invention and without any restriction.Yet in order to satisfy the demand on performance, transparency electrode preferably has and comprises two-layer at least structure; That is the contact layer that contacts with p type layer and be arranged on the contact layer and current-diffusion layer that promote the electric current diffusion.If satisfy the demand on the above-mentioned performance, certainly, can adopt one deck of the performance that has contact layer and current-diffusion layer concurrently.When adopting one deck structure, advantage is that the complexity of manufacturing process is less.
The requirement contact layer presents the low contact resistance to p type layer.From this viewpoint, contact layer is preferably formed or is formed by its alloy by platinum group metal such as platinum (Pt), ruthenium (Ru), osmium (Os), rhodium (Rh), iridium (Ir) or palladium (Pd).Among them, Pt and Pt alloy are particularly preferred, this is because with respect to not experiencing the high-resistance relatively p type GaN of having of high-temperature heat treatment based compound semiconductor layer, Pt and Pt alloy have high work function and can realize good ohmic contact under without any heat treated situation.
Under the situation that contact layer is formed by platinum group metal or its alloy, from the viewpoint of optical clarity, must significantly reduce the thickness of this layer, be preferably 0.1 to 7.5nm.When thickness during, can not form this film reliably, and when thickness surpassed 7.5nm, transparency reduced less than 0.1nm.More preferably, thickness is 5nm or littler.Consider that this thickness is preferably 0.5 especially to 2.5nm owing to the reduction of the stable caused transparency of the stacked current-diffusion layer and the film that forms subsequently.
Yet when reducing the thickness of contact layer, contact layer increases along the resistance of in-plane, because the higher resistance of ratio of p type layer, the electric current diffusion is limited to as around the joint liner electrode of electric current injection part.As a result, the uniformity of emission figure reduces, and has reduced emission output thus.
When current-diffusion layer with high light transmission and high conductivity is set when acting on the method for the electric current diffusion that promotes contact layer on contact layer, can realize the even diffusion of electric current, and greatly do not weaken the light transmission of low contact resistance and platinum group metal, can make luminescent device thus with high output.
Current-diffusion layer preferably for example is selected from the metal of gold, silver and copper by the metal material with high conductivity; Or at least a alloy that contains in these metals forms.Among them, gold is most preferred, and this is because its film presents high light transmission.
Alternatively, current-diffusion layer can also for example ITO, zinc oxide, zinc oxide aluminum, the tin oxide of mixing F, titanium oxide, bismuth oxide and magnesium oxide form by the transparent material with high conductivity such as zinc sulphide and metal oxide.From the viewpoint of high light transmission, preferred this transparent material.Among them, known ITO, zinc oxide, zinc oxide aluminum and the tin oxide of mixing F have conductivity, from but most preferred.
Under the situation that current-diffusion layer is formed by metal, the thickness of this layer is preferably 1 to 20nm.When thickness during less than 1nm, the electric current diffusion effect is poor, and when thickness surpassed 20nm, the optical transparence of current-diffusion layer significantly descended, and may reduce emission output.More preferably, thickness is 10nm or littler.In addition, when thickness was controlled as 3 to 6nm, current-diffusion layer had balanced optical transparence and electric current diffusion effect.By in conjunction with this current-diffusion layer and above-mentioned contact layer, can obtain emission uniformly in the whole surface of positive electrode with high emission output.
Under the situation that current-diffusion layer is formed by transparent material, the thickness of this layer is preferably 10 to 5,000nm.When thickness during less than 10nm, the electric current diffusion effect is poor, and surpasses 5 when thickness, and during 000nm, the optical transparence of current-diffusion layer significantly descends, and may reduce emission output.More preferably, thickness is 50 to 2,000nm.In addition, when thickness is controlled as 100 to 1, during 000nm, current-diffusion layer has balanced optical transparence and electric current diffusion effect.By in conjunction with this current-diffusion layer and above-mentioned contact layer, can obtain emission uniformly in the whole surface of positive electrode with height output.
Forming under the situation of joint liner electrode on the transparency electrode, the superiors of transparency electrode can be coated with metal or metal oxide.
The superiors of transparency electrode can be current-diffusion layers, and current-diffusion layer can be coated with the layer that is used to engage the joint liner electrode.Because the formation of the layer that is used to engage has weakened the transparency, the superiors are preferably current-diffusion layer.
Can on the upper space of transparency electrode, extract radiative operation.In this operation, for example, recessed portion and/or projection are set on the upper space of transparency electrode.Can be by utilizing composition or providing recessed portion and/or projection by wet treatment.Shape to recessed portion and/or projection does not have specific limited, can adopt any known shape such as bar shaped, grid and point.
And, when forming the joint liner electrode on this surface with recessed portion and/or projection, can improve the adhesive strength of reflector and transparency electrode.
The method that forms contact layer, current-diffusion layer and joint liner electrode is not had specific restriction, can adopt any known method for example vacuum vapor deposition or sputter.
Positive electrode of the present invention can be applicable to the known light emitting semiconductor device of any routine, comprises gallium-nitride-based compound semiconductor light emitting element, the device shown in Fig. 1 for example, and it comprises: substrate; Media by resilient coating stacked gallium nitride-based compound semiconductor layer (that is, n type semiconductor layer, luminescent layer and p type semiconductor layer) on substrate.
Material to substrate does not have specific restriction, and substrate can be formed by any material known.The example of material known comprises oxide monocrystal such as sapphire single-crystal (Al
2O
3A plane, C plane, M plane or R plane), spinelle monocrystalline (MgAl
2O
4), ZnO monocrystalline, LiAlO
2Monocrystalline, LiGaO
2Monocrystalline and MgO monocrystalline; The Si monocrystalline; The SiC monocrystalline; The GaAs monocrystalline; The AlN monocrystalline; The GaN monocrystalline; And boride single crystal such as ZrB
2Monocrystalline.Crystal orientation to substrate does not have specific restriction.The crystal face of substrate can tilt or not tilt particular crystal plane.
Structure to n type semiconductor layer, luminescent layer and p type semiconductor layer does not have specific restriction, and these layers can have various known structures.P type semiconductor layer can have conventional carrier concentration.It should be noted that transparency electrode of the present invention can also be applied to have low carrier concentration (for example, about 1 * 10
17Cm
-3) the p type semiconductor layer.
In the present invention, the type of the gallium nitride-based compound semiconductor that is used to form n type semiconductor layer, luminescent layer and p type semiconductor layer is not had specific restriction, can adopt by molecular formula Al
xIn
yGa
1-x-yThe conventional known semiconductor of N (0≤x＜1,0≤y＜1,0≤x+y＜1) expression.
Method to these gallium nitride semiconductors that are used to grow does not have specific restriction, can adopt any known method grow III group-III nitride semiconductor, for example MOCVD (metal organic chemical vapor deposition), HVPE (hydride gas-phase epitaxy) or MBE (molecular beam epitaxy).From the viewpoint of layer thickness controllability and mass productivity, preferably adopt MOCVD.Under the situation of MOCVD, adopt hydrogen (H
2) or nitrogen (N
2) as carrier gas, adopt trimethyl gallium (TMG) or triethyl-gallium (TEG) as Ga (III family element) source, adopt trimethyl aluminium (TMA) or triethyl aluminum (TEA) as Al (III family element) source, adopt trimethyl indium (TMI) or triethylindium (TEI) as In (III family element) source, and adopt ammonia (NH
3), hydrazine (N
2H
4) wait source as N (V group element).In addition, adopt the monosilane (SiH that is used as the Si source
4) or disilane (Si
2H
6) or as the germane (GeH in Ge source
4) or organic germanium compounds as n type dopant, and adopt two (cyclopentadienyl group) magnesium (Cp as the Mg source
2Mg) or two (ethyl cyclopentadienyl group) magnesium ((EtCp)
2Mg) as p type dopant.
Gallium nitride-based compound semiconductor structure for n type semiconductor layer, luminescent layer and p type semiconductor layer on the top that negative electrode is attached to comprise substrate and is arranged on continuously substrate, so that negative electrode contacts with the n type semiconductor layer, remove a part of luminescent layer and a part of p type semiconductor layer, so that expose the n type semiconductor layer.After this, on remaining p type semiconductor layer, form positive electrode of the present invention, and on the n type semiconductor layer of exposing, form negative electrode.The Nomenclature Composition and Structure of Complexes to negative electrode does not have specific restriction, can adopt any known negative electrode.
When adopting, can on the back side of substrate, reflectance coating be set to the substrate of optical transparency such as sapphire and SiC with the wavelength in the emission wavelength ranges of falling within.When reflectance coating is set, can reduce radiative loss at the place, bottom of substrate.Thereby, can further improve radiative extraction efficiency.
And, can carry out such operation, by it recessed portion and/or projection are being set on the surface of semiconductor or transparency electrode or on the back side of substrate.As a result, can further improve radiative extraction efficiency.Can form surface and vertical surface by this operation with respect to substrate tilting.In order to prevent repeatedly to reflect, be preferably formed inclined surface.Can carry out this operation by the surface of grinding semiconductor or transparency electrode or the back side of substrate.Alternatively, can carry out this operation by the structure that adopts transparent material.
By positive electrode of the present invention is used for light emitting semiconductor device, can make the gallium-nitride-based compound semiconductor light emitting element that presents high emission intensity.In other words, can make high-brightness LED based on this technology.Thereby, can under low electric power, drive the electronic equipment such as portable phone and the display floater that have all adopted the chip of making based on this technology; All adopt the machine of any this electronic equipment and device as automobile, computer and game machine, and realized excellent characteristic.Especially, in by battery-driven portable phone, game machine, toy and automobile component, obtain electrical power significantly and saved effect.
Example
To will introduce the present invention in more detail by example below, it should not be interpreted as the present invention is limited to this.
＜example 1 〉
Fig. 2 shows the sectional view of the gallium-nitride-based compound semiconductor light emitting element of making in this example, and Fig. 3 shows its plane graph.Make the gallium nitride compound semiconductor layer stack structure by following operation.Go up formation AlN resilient coating (6) in Sapphire Substrate (1), and on resilient coating, form following layer in regular turn: unadulterated GaN end liner layer (undercoat layer) (thickness: 8 μ m) (3a); Si doped n type GaN contact layer (thickness: 2 μ m) (3b); N type In
0.1Ga
0.9N coating (thickness: 250nm) (3c); Comprise the GaN barrier layer that Si mixes (5 layers and one final layer, every layer thickness: 16nm) and In
0.2Ga
0.8N trap layer (5 layers, every layer thickness: the luminescent layer of multi-quantum pit structure 2.5nm) (4); Mg doped p type Al
0.07Ga
0.93N coating (thickness: 0.01 μ m) (5a); And Mg doped p type GaN contact layer (thickness: 0.15 μ m) (5b).On the p of gallium nitride-based compound semiconductor stepped construction type GaN contact layer, form positive electrode of the present invention (10), positive electrode is made of following layer: comprise Pt contact layer (thickness: 1.5nm) (111) and Au current-diffusion layer (thickness: the 5nm) transparency electrode of (112) (11); And have by Pt layer (thickness: 50nm) (13a), Ti layer (thickness: 20nm) (13b), Al layer (thickness: 10nm) (13c), Ti layer (thickness: 100nm) (13d) and Au layer (thickness: 200nm) the joint liner electrode (13) of the five-layer structure of (13e) formation.Forming among five layers of joint liner electrode, (thickness: 50nm) (13a) is as the reflector to have the Pt layer of high reflectance.On n type GaN contact layer, formation has the double-deck negative electrode of Ti/Au (20).The semiconductor side of the luminescent device of Zhi Zaoing is as extraction side thus.Fig. 3 shows the structure of positive electrode and negative electrode.
In above-mentioned stepped construction, n type GaN contact layer has 1 * 10
19Cm
-3Carrier concentration, the GaN barrier layer has 1 * 10
18Cm
-3The Si concentration of dopant, p type GaN contact layer has 5 * 10
18Cm
-3Carrier concentration, and p type AlGaN coating has 5 * 10
19Cm
-3The Mg concentration of dopant.
Under well-known representative condition, pass through stacked these gallium nitride compound semiconductor layers of MOCVD.Form positive electrode and negative electrode by following operation.
Utilize reactive ion etching to expose to be provided with a part of n type GaN contact layer of negative electrode thereon by following operation.
At first, on the p type semiconductor layer, form etching mask by following operation.Photoresist is applied on the whole surface of semiconductor stacked structure, removes a part of resist by known photoetching technique, this part is bigger slightly than positive electrode.The stepped construction of handling is thus placed the vacuum vapor deposition apparatus, and 4 * 10
-4About 50nm) and Ti (thickness: about 300nm) Pa or lower pressure are down by the stacked Ni of beam methods (thickness:.Subsequently, remove stacked metal film and photoresist by peeling off (lift-off) zone beyond from the positive electrode zone.
On the electrode that in the etching reaction chamber of reactive ion etching device, is provided with, place semiconductor stacked structure.Etching reaction chamber is evacuated down to 10
-4Pa, and with etching gas (Cl
2) be supplied in the reative cell that has been evacuated.Carry out etching, up to exposing n type GaN contact layer.After finishing etching, from the reactive ion etching device, remove this structure, and remove etching mask with nitric acid and hydrofluoric acid.
Subsequently, by known photoetching and lift-off technology, only in being used to form the zone of positive electrode, on p type GaN contact layer, form contact layer that constitutes by Pt and the current-diffusion layer that constitutes by Au.When forming contact layer and current-diffusion layer, the stepped construction of gallium nitride-based compound semiconductor layer is placed the vacuum vapor deposition apparatus, and on p type GaN contact layer stacked in regular turn Pt (1.5nm) and Au (5nm).After from vacuum reaction chamber, removing stepped construction, with the stripping process processing layer stack structure of well-known.In a similar fashion, on the part of current-diffusion layer, form Pt reflector (13a), Ti barrier layer (13b), Al barrier layer (13c), Ti barrier layer (13d) and the Au the superiors (13e) in regular turn, to form joint liner electrode (13) thus.Thereby, on p type GaN contact layer, form positive electrode of the present invention.
On the n type GaN contact layer that exposes thus, form negative electrode by following operation.At first, resist is applied on the whole surface of structure, and removes a part of resist that on the n type GaN contact layer that exposes, is used to form negative electrode by known photoetching technique.The vacuum vapor deposition of adopting by routine, deposit Ti (100nm) and Au (200nm) in regular turn on semiconductor layer are to form negative electrode thus.After this, remove resist by the method for routine.
Grind and polish the back side of the substrate of the wafer that forms thus with positive electrode and negative electrode, thus substrate thickness is adjusted to 80 μ m, then by utilizing laserscriber at the layer side wafer scribing of semiconductor multilayer and by the cutting of chip cut-off rule, to make square chip (350 μ m * 350 μ m) thus.By utilizing the measurement of probe, find that the forward voltage that applies each chip under the electric current at 20mA is 2.9V.
In TO-18 encapsulation shell, chip is installed.By utilizing the measurement of tester, find to be output as 4.5mW in the emission that applies chip under the electric current of 20mA.Distribution from the emission of light-emitting area shows that light is launched in the whole zone of now corresponding with the positive electrode of surface light-emitting area.
The reflector that discovery is made in example 1 has 92% reflectivity in the wavelength region may of 470nm.Determine reflectivity by means of the empty substrate that the spectrophotometer utilization is made by glass, the empty substrate that glass is made during forming the joint liner electrode has been placed in the same reative cell.
And, determine the peel strength of joint liner electrode by the shearing tester (shear tester) of routine.Find that peel strength on average is not less than 980mN (100gf), nothing can come off from transparency electrode.
＜comparative example 1 〉
Do not have the reflector (13a) except transparency electrode and joint liner electrode are set in the zone that has formed the joint liner electrode, repeat the operation of example 1, to make luminescent device thus.Thereby in comparative example 1, the bottom of joint liner electrode (in semiconductor side) is Ti layer (13b), and it directly contacts with p type contact layer (5b).
Electrically contact in order to set up, make the joint liner electrode around contact with transparency electrode, wherein contact area be about the joint liner electrode area 5%.Electric current by contact portion from the joint liner electrode stream to transparency electrode.
Assess the luminescent device of making thus in the mode identical, find that forward voltage and emission output are respectively 3.1V and 4.2mW with the mode of example 1.Distribution from the emission of light-emitting area shows, the light emission does not take place in the zone corresponding to the joint liner electrode above the zone.These are the surface as a result, compares with Pt, and Ti has with respect to higher contact resistance of p type contact layer (5b) and lower reflectivity.
＜example 2 〉
Except the thickness with the Pt contact layer (111) of transparency electrode (11) is adjusted into 1nm; Except adopting the ITO film that forms by sputter as current-diffusion layer (112) with 100nm thickness; And except the reflector (13a) that forms the joint liner electrode by Al, repeat the operation of example 1, to make luminescent device thus.
Assess the luminescent device of making thus in the mode identical, find that forward voltage and emission output are respectively 2.9V and 5.0mW with the mode of example 1.
And, determine the peel strength of joint liner electrode by the shearing tester of routine.Find that in a plurality of samples peel strength on average is not less than 980mN (100gf), but coming off at the interface between joint liner electrode and transparency electrode.
＜comparative example 2 〉
Except joint liner electrode (13) does not have reflector (13a), repeat the operation of example 1, make luminescent device thus.Assess the luminescent device of making thus in the mode identical with the mode of example 1.As a result, the discovery forward voltage is 2.9V, and this low value with example 2 is identical, but emission output is reduced to 4.7mW.
＜example 3 〉
In this example, make the gallium nitride compound semiconductor layer stack structure in the mode similar by following operation to example 1.Go up formation AlN resilient coating (6) in Sapphire Substrate (1), and on resilient coating, form following layer in regular turn: unadulterated GaN end liner layer (thickness: 6 μ m) (3a); Ge doped n type GaN contact layer (thickness: 4 μ m) (3b); Si doped n type In
0.1Ga
0.9N coating (thickness: 180nm) (3c); Comprise the GaN barrier layer that Si mixes (5 layers and one final layer, every layer thickness: 16nm) and In
0.2Ga
0.8N trap layer (5 layers, every layer thickness: the luminescent layer of multi-quantum pit structure 2.5nm) (4); Mg doped p type Al
0.07Ga
0.93N coating (thickness: 0.01 μ m) (5a); Mg doped p type Al
0.02Ga
0.98N contact layer (thickness: 0.175 μ m) (5b); And Ge doped n type GaN tunnel layer (thickness: 20nm) (not shown).On the Ge of gallium nitride-based compound semiconductor stepped construction doped n type GaN tunnel layer, form positive electrode of the present invention (10), positive electrode is made of following layer: only by ITO current-diffusion layer (thickness: the 250nm) transparency electrode (11) of (112) formation; And have by Al layer (thickness: 50nm) (13a), Ti layer (thickness: 20nm) (13b), Al layer (thickness: 10nm) (13c), Ti layer (thickness: 100nm) (13d) and Au layer (thickness: 200nm) the joint liner electrode (13) of the five-layer structure of (13e) formation.Forming among five layers of joint liner electrode, (thickness: 50nm) (13a) is as the reflector to have the Al layer of high reflectance.On n type GaN contact layer, formation has the double-deck negative electrode of Ti/Au (20).The semiconductor side of the luminescent device of Zhi Zaoing is as extraction side thus.Fig. 3 shows the structure of positive electrode and negative electrode.
In above-mentioned stepped construction, n type GaN contact layer has 8 * 10
18Cm
-3Carrier concentration, n type InGaN coating has 7 * 10
18Cm
-3The Si concentration of dopant, the GaN barrier layer has 1 * 10
17Cm
-3The Si concentration of dopant, p type AlGaN contact layer has 5 * 10
17Cm
-3Carrier concentration, p type AlGaN coating has 2 * 10
20Cm
-3The Mg concentration of dopant, and n type GaN tunnel layer has 2 * 10
19Cm
-3The Ge concentration of dopant.
Assess the luminescent device of making thus in the mode identical, find that forward voltage and emission output are respectively 3.2V and 8.5mW with the mode of example 1.
And, determine the peel strength of joint liner electrode by the shearing tester of routine.Find that in a plurality of samples peel strength on average is not less than 980mN (100gf), but coming off at the interface between joint liner electrode and transparency electrode.
Industrial usability
Adopt the light emitting semiconductor device of positive electrode of the present invention to present low driving voltage and high emission intensity. Thereby this luminescent device can be significantly effectively for the manufacture of lamp or similar device.
Claims (27)
1. positive electrode that is used for light emitting semiconductor device, described electrode comprises the transparency electrode that is formed on the semiconductor layer, and be formed on joint liner electrode on the part of described transparency electrode, wherein said transparency electrode has the contact layer that contacts with the p type semiconductor layer and is arranged on current-diffusion layer on the described contact layer, described contact layer is made of platinum group metal or its alloy, described contact layer has 0.1 to 7.5nm thickness, described joint liner electrode is a layer structure, at the mask that contacts with described transparency electrode the reflector is arranged, on described reflector, have the barrier layer and/or the superiors, light extraction is arrived outside by described transparency electrode.
2. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein be not less than 50gf as the described reflector of peel strength and the adhesive strength between the described transparency electrode.
3. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein has 60% transmissivity for the described transparency electrode of the light with the wavelength in the emission wavelength ranges that falls within described light emitting semiconductor device.
4. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said reflector is by the metal that is selected from Al, Ag, Pt family metal and contain Al, Ag and the alloy of at least a metal of Pt family metal constitutes.
5. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said light emitting semiconductor device is a gallium-nitride-based compound semiconductor light emitting element.
6. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said reflector is made of metal that is selected from Al, Ag, Pt and the alloy that contains at least a metal of Al, Ag and Pt.
7. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said reflector has 20 to 3, the thickness of 000nm.
8. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said barrier layer is made of Ti, Cr or Al, and the described the superiors are made of Au or Al.
9. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said transparency electrode comprises the layer that is made of metal in described joint liner electrode side.
10. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said transparency electrode comprises the layer that is made of transparent material in described joint liner electrode side.
11. according to the positive electrode that is used for light emitting semiconductor device of claim 10, wherein said transparency electrode only is made of the conductive transparent material beyond the metal.
12. the positive electrode that is used for light emitting semiconductor device according to claim 1 wherein extracts radiative operation to the upper space of described transparency electrode.
13. according to the positive electrode that is used for light emitting semiconductor device of claim 12, the upper space of wherein said transparency electrode is formed by transparent material.
14. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said contact layer is made of platinum.
15. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said contact layer has 0.5 to 2.5nm thickness.
16. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said current-diffusion layer is made of the metal that is selected from gold, silver and copper or is made of the alloy of at least a metal that contains gold, silver and copper.
17. according to the positive electrode that is used for light emitting semiconductor device of claim 16, wherein said current-diffusion layer is made of gold or billon.
18. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said current-diffusion layer has 1 to 20nm thickness.
19. according to the positive electrode that is used for light emitting semiconductor device of claim 18, wherein said current-diffusion layer has 3 to 6nm thickness.
20. according to the positive electrode that is used for light emitting semiconductor device of claim 1, wherein said current-diffusion layer is made of conductive transparent material.
21. according to the positive electrode that is used for light emitting semiconductor device of claim 10, wherein said transparent material is to be selected from ITO, zinc oxide, zinc oxide aluminum, the tin oxide of mixing F, titanium oxide, zinc sulphide, bismuth oxide and magnesian at least a material.
22. according to the positive electrode that is used for light emitting semiconductor device of claim 21, wherein said transparent material is at least a material that is selected from ITO, zinc oxide, zinc oxide aluminum and mixes the tin oxide of F.
23. according to the positive electrode that is used for light emitting semiconductor device of claim 10, wherein said transparent material has 10 to 5, the thickness of 000nm.
24. according to the positive electrode that is used for light emitting semiconductor device of claim 23, wherein said transparent material has 100 to 1, the thickness of 000nm.
25. a light emitting semiconductor device, it adopts the positive electrode according to claim 1.
26. a gallium-nitride-based compound semiconductor light emitting element comprises: substrate; N type semiconductor layer, luminescent layer and p type semiconductor layer, these layers form on described substrate and by the gallium nitride-based compound semiconductor layer with the sequential cascade of n type semiconductor layer, luminescent layer and p type semiconductor layer; Be arranged on the positive electrode on the described p type semiconductor layer; And being arranged on negative electrode on the described n type semiconductor layer, wherein said positive electrode is the positive electrode according to claim 1.
27. a lamp, it adopts the luminescent device according to claim 25.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP222336/2004 | 2004-07-29 | ||
| JP2004222336 | 2004-07-29 | ||
| US60/599,571 | 2004-08-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1993837A CN1993837A (en) | 2007-07-04 |
| CN100590898C true CN100590898C (en) | 2010-02-17 |
Family
ID=38176830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200580025689A Active CN100590898C (en) | 2004-07-29 | 2005-07-28 | Positive electrode for semiconductor light-emitting device |
Country Status (4)
| Country | Link |
|---|---|
| JP (4) | JP2009033210A (en) |
| KR (1) | KR100895452B1 (en) |
| CN (1) | CN100590898C (en) |
| TW (1) | TWI275190B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210252638A1 (en) * | 2020-02-17 | 2021-08-19 | Samsung Sdi Co., Ltd. | Laser welding method and monitoring method for secondary battery |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101485000B (en) * | 2006-06-23 | 2012-01-11 | Lg电子株式会社 | Light emitting diode having vertical topology and method of making the same |
| JP2008177525A (en) | 2006-12-20 | 2008-07-31 | Showa Denko Kk | Method for manufacturing group iii nitride compound semiconductor light-emitting element, the group iii nitride compound semiconductor light-emitting element and lamp |
| CN101971368A (en) * | 2008-03-13 | 2011-02-09 | 昭和电工株式会社 | Semiconductor light-emitting device and method for manufacturing the same |
| KR100986518B1 (en) | 2008-06-16 | 2010-10-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device |
| TWI412159B (en) * | 2008-06-16 | 2013-10-11 | Toyoda Gosei Kk | Semiconductor light-emitting device, electrode thereof and production method, and lamp |
| USPP22761P2 (en) | 2010-04-23 | 2012-05-29 | Spring Meadow Nursery, Inc. | Potentilla plant named ‘White Lady’ |
| US9293656B2 (en) * | 2012-11-02 | 2016-03-22 | Epistar Corporation | Light emitting device |
| US8716723B2 (en) | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
| KR101257572B1 (en) * | 2008-12-15 | 2013-04-23 | 도요타 고세이 가부시키가이샤 | Semiconductor light emission element |
| JP5350833B2 (en) * | 2009-02-20 | 2013-11-27 | 株式会社東芝 | Semiconductor light emitting device, semiconductor light emitting device, and method for manufacturing semiconductor light emitting device |
| JP4659926B2 (en) | 2009-04-02 | 2011-03-30 | パナソニック株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
| CN101859838B (en) * | 2009-04-07 | 2014-09-10 | 裕星企业有限公司 | Light-emitting diode structure |
| KR101081166B1 (en) | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same and light emitting device package |
| KR101103892B1 (en) | 2009-12-08 | 2012-01-12 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
| CN102696122A (en) * | 2010-04-01 | 2012-09-26 | 松下电器产业株式会社 | Nitride semiconductor element and manufacturing method therefor |
| CN101846256A (en) * | 2010-05-04 | 2010-09-29 | 蔡州 | Led light source |
| CN102810613B (en) * | 2011-05-30 | 2016-04-13 | 比亚迪股份有限公司 | Current spread electrode, light emitting semiconductor device and preparation method thereof |
| JP6077201B2 (en) | 2011-08-11 | 2017-02-08 | 昭和電工株式会社 | Light emitting diode and manufacturing method thereof |
| JP5639626B2 (en) | 2012-01-13 | 2014-12-10 | シャープ株式会社 | Semiconductor light emitting device and electrode film forming method |
| JP5888132B2 (en) * | 2012-06-08 | 2016-03-16 | 豊田合成株式会社 | Method for manufacturing light emitting device |
| TWI514628B (en) * | 2013-10-24 | 2015-12-21 | Lextar Electronics Corp | Electrode structure and light emitting diode structure having the same |
| KR101561198B1 (en) | 2013-11-12 | 2015-10-19 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| KR101628244B1 (en) * | 2014-02-11 | 2016-06-21 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN104409601A (en) * | 2014-11-05 | 2015-03-11 | 扬州中科半导体照明有限公司 | Flip light-emitting diode chip with double reflection layers |
| CN107123594B (en) * | 2017-05-10 | 2019-11-26 | 湘能华磊光电股份有限公司 | LED electrode production method, LED electrode and LED chip |
| CN112289900B (en) * | 2020-09-16 | 2021-10-08 | 华灿光电(苏州）有限公司 | Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof |
| CN116364827B (en) * | 2023-05-29 | 2023-08-29 | 江西兆驰半导体有限公司 | Mini LED and preparation method thereof |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2566207Y2 (en) * | 1992-10-21 | 1998-03-25 | 日亜化学工業株式会社 | Gallium nitride based light emitting device with current injection |
| JP3717196B2 (en) * | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | Light emitting element |
| JP3468644B2 (en) * | 1996-10-22 | 2003-11-17 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
| JP4118370B2 (en) * | 1997-12-15 | 2008-07-16 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Nitride semiconductor light-emitting device having reflective p-electrode, method for manufacturing the same, and semiconductor optoelectronic device |
| US6287947B1 (en) * | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
| JP3068914U (en) * | 1999-11-11 | 2000-05-26 | 洲磊科技股▲ふん▼有限公司 | Flip-chip light emitting device |
| JP3665243B2 (en) * | 1999-11-19 | 2005-06-29 | 日亜化学工業株式会社 | Nitride semiconductor device and manufacturing method thereof |
| JP2001217456A (en) * | 2000-02-03 | 2001-08-10 | Sharp Corp | Gallium nitride system compound semiconductor light- emitting device |
| JP3505643B2 (en) * | 2000-04-19 | 2004-03-08 | 星和電機株式会社 | Gallium nitride based semiconductor light emitting device |
| KR100413435B1 (en) * | 2001-04-02 | 2003-12-31 | 엘지전자 주식회사 | Light Emitting Diode and Fabrication Method for the same |
| US7148520B2 (en) * | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
| JP2003160785A (en) * | 2001-11-27 | 2003-06-06 | Toshiba Corp | Red-light-emitting phosphor and light emitter using the same |
| US8294172B2 (en) * | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
| JP2004179347A (en) * | 2002-11-26 | 2004-06-24 | Matsushita Electric Works Ltd | Semiconductor light emitting element |
| JP2004193270A (en) * | 2002-12-10 | 2004-07-08 | Sharp Corp | Oxide semiconductor light emitting element |
| JP2003347586A (en) * | 2003-07-08 | 2003-12-05 | Toshiba Corp | Semiconductor light-emitting device |
| KR100580634B1 (en) * | 2003-12-24 | 2006-05-16 | 삼성전자주식회사 | light emitting device and method of manufacturing thereof |
| JP2005259970A (en) * | 2004-03-11 | 2005-09-22 | Nichia Chem Ind Ltd | Semiconductor light emitting element |
-
2005
- 2005-07-28 KR KR1020077000459A patent/KR100895452B1/en active IP Right Grant
- 2005-07-28 CN CN200580025689A patent/CN100590898C/en active Active
- 2005-07-29 TW TW94125783A patent/TWI275190B/en active
-
2008
- 2008-11-11 JP JP2008289155A patent/JP2009033210A/en active Pending
- 2008-11-12 JP JP2008290159A patent/JP2009065196A/en active Pending
- 2008-11-13 JP JP2008291278A patent/JP2009033213A/en active Pending
-
2011
- 2011-01-04 JP JP2011000134A patent/JP5533675B2/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210252638A1 (en) * | 2020-02-17 | 2021-08-19 | Samsung Sdi Co., Ltd. | Laser welding method and monitoring method for secondary battery |
| US11897054B2 (en) * | 2020-02-17 | 2024-02-13 | Samsung Sdi Co., Ltd. | Laser welding method and monitoring method for secondary battery |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100895452B1 (en) | 2009-05-07 |
| TWI275190B (en) | 2007-03-01 |
| JP5533675B2 (en) | 2014-06-25 |
| JP2009033213A (en) | 2009-02-12 |
| KR20070041506A (en) | 2007-04-18 |
| JP2009033210A (en) | 2009-02-12 |
| CN1993837A (en) | 2007-07-04 |
| JP2009065196A (en) | 2009-03-26 |
| JP2011066461A (en) | 2011-03-31 |
| TW200610200A (en) | 2006-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100590898C (en) | Positive electrode for semiconductor light-emitting device | |
| US8115212B2 (en) | Positive electrode for semiconductor light-emitting device | |
| US8643046B2 (en) | Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode | |
| TWI412159B (en) | Semiconductor light-emitting device, electrode thereof and production method, and lamp | |
| CN100568561C (en) | Gallium-nitride-based compound semiconductor light emitting element | |
| CN100594624C (en) | Method for forming luminous device wiring and apparatus for fixing luminous device | |
| JP5138873B2 (en) | Nitride semiconductor device | |
| JP4819453B2 (en) | Gallium nitride based semiconductor light emitting device and method of manufacturing the same | |
| CN101405879B (en) | Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same | |
| TWI453955B (en) | Semiconductor light-emitting device and production method of semiconductor light-emitting device, and lamp | |
| US7235820B2 (en) | Group III-nitride light emitting device | |
| JP2006066903A (en) | Positive electrode for semiconductor light-emitting element | |
| JP2006074019A (en) | Transparent electrode for semiconductor light-emitting device | |
| JP2006041403A (en) | Semiconductor luminous element | |
| JP2010267797A (en) | Semiconductor light emitting element, lamp, illuminating apparatus, electronic apparatus, and electrode | |
| JP2005191521A (en) | Nitride semiconductor light emitting device for flip chip and its manufacturing method | |
| JP2007067184A (en) | Led package | |
| CN1449060A (en) | Structure of light-emitting diode and method for making the same | |
| JP2011034989A (en) | Semiconductor light-emitting element and method for manufacturing the same, lamp, electronic apparatus, and mechanical apparatus | |
| JP2007073789A (en) | Electrodes for semiconductor light emitting device | |
| KR20090079122A (en) | Reflective structure and light emitting device | |
| JP5515431B2 (en) | Semiconductor light emitting device, electrode thereof, manufacturing method and lamp | |
| KR100691264B1 (en) | Vertical structured nitride based semiconductor light emitting device | |
| CN101258614A (en) | Gallium-nitride-based compound semiconductor light emitting element and its manufacturing method | |
| WO2009154191A1 (en) | Semiconductor light emitting element, electrode and manufacturing method for the element, and lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TOYODA GOSEI CO., LTD. Free format text: FORMER OWNER: SHOWA DENKO K.K. Effective date: 20130129 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130129 Address after: Aichi Patentee after: Toyoda Gosei Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Showa Denko K. K. |