CN100592474C - 研磨垫及其制造方法 - Google Patents
研磨垫及其制造方法 Download PDFInfo
- Publication number
- CN100592474C CN100592474C CN02822514A CN02822514A CN100592474C CN 100592474 C CN100592474 C CN 100592474C CN 02822514 A CN02822514 A CN 02822514A CN 02822514 A CN02822514 A CN 02822514A CN 100592474 C CN100592474 C CN 100592474C
- Authority
- CN
- China
- Prior art keywords
- grinding
- grinding pad
- polyurethane
- layer
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/30—Resins or natural or synthetic macromolecular compounds for close-grained structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
- C08G18/12—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
- C08G18/4205—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups
- C08G18/4208—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups
- C08G18/4211—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups derived from aromatic dicarboxylic acids and dialcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
- C08G18/4236—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4804—Two or more polyethers of different physical or chemical nature
- C08G18/4808—Mixtures of two or more polyetherdiols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/61—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6633—Compounds of group C08G18/42
- C08G18/6637—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/664—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6666—Compounds of group C08G18/48 or C08G18/52
- C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/721—Two or more polyisocyanates not provided for in one single group C08G18/73 - C08G18/80
- C08G18/724—Combination of aromatic polyisocyanates with (cyclo)aliphatic polyisocyanates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/0061—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof characterized by the use of several polymeric components
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D175/00—Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
- C09D175/04—Polyurethanes
- C09D175/08—Polyurethanes from polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2101/00—Manufacture of cellular products
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2110/00—Foam properties
- C08G2110/0041—Foam properties having specified density
- C08G2110/0066—≥ 150kg/m3
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/052—Closed cells, i.e. more than 50% of the pores are closed
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
- C08J2375/04—Polyurethanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249976—Voids specified as closed
Abstract
Description
实施例4-1 | 实施例4-2 | 实施例4-3 | 实施例4-4 | 比较例4-1 | |
表面活性剂含量(重量%) | 0.79 | 2.33 | 4.51 | 4.54 | 7.35 |
热尺寸变化率(%) | 0.6 | 1.1 | 1.7 | 2.3 | 3.2 |
密度(g/cm<sup>3</sup>) | 0.92 | 0.87 | 0.81 | 0.72 | 0.68 |
D硬度 | 61 | 54 | 59 | 57 | 38 |
压缩率(%) | 0.9 | 1.4 | 0.8 | 1.2 | 4.2 |
贮存弹性模量(MPa) | 315 | 285 | 302 | 295 | 143 |
平坦化特性 | ○ | ○ | ○ | ○ | × |
晶片内均匀性 | ○ | ○ | ○ | ○ | × |
Claims (11)
Applications Claiming Priority (28)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001347410A JP2003145414A (ja) | 2001-11-13 | 2001-11-13 | 研磨パッド及びその製造方法 |
JP2001347585 | 2001-11-13 | ||
JP347585/2001 | 2001-11-13 | ||
JP347410/2001 | 2001-11-13 | ||
JP347538/2001 | 2001-11-13 | ||
JP2001347538 | 2001-11-13 | ||
JP351629/2001 | 2001-11-16 | ||
JP2001351629A JP2003145415A (ja) | 2001-11-16 | 2001-11-16 | 研磨パッド |
JP374354/2001 | 2001-12-07 | ||
JP2001374223A JP3325562B1 (ja) | 2001-12-07 | 2001-12-07 | 発泡ポリウレタン研磨パッドの製造方法 |
JP374223/2001 | 2001-12-07 | ||
JP2001374354 | 2001-12-07 | ||
JP2001375954 | 2001-12-10 | ||
JP375954/2001 | 2001-12-10 | ||
JP2001378181 | 2001-12-12 | ||
JP378181/2001 | 2001-12-12 | ||
JP2002105459A JP3359629B1 (ja) | 2001-04-09 | 2002-04-08 | ポリウレタン組成物からなる研磨パッド |
JP105459/2002 | 2002-04-08 | ||
JP117767/2002 | 2002-04-19 | ||
JP2002117767A JP3455208B2 (ja) | 2001-11-13 | 2002-04-19 | 半導体ウエハ研磨パッド、半導体ウエハの研磨方法、研磨パッド用研磨シート、及び研磨シート用発泡体ブロック |
JP2002117623 | 2002-04-19 | ||
JP117623/2002 | 2002-04-19 | ||
JP2002144628 | 2002-05-20 | ||
JP144617/2002 | 2002-05-20 | ||
JP2002144617 | 2002-05-20 | ||
JP144628/2002 | 2002-05-20 | ||
JP146495/2002 | 2002-05-21 | ||
JP2002146495 | 2002-05-21 |
Related Child Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101487503A Division CN100551625C (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CNB2007101487471A Division CN100540221C (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CNA2007101487486A Division CN101130231A (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CN2007101487467A Division CN101148031B (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CN2007101487452A Division CN101148030B (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CNB2007101487518A Division CN100551626C (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
CNB2007101487490A Division CN100569448C (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1586002A CN1586002A (zh) | 2005-02-23 |
CN100592474C true CN100592474C (zh) | 2010-02-24 |
Family
ID=27584948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02822514A Expired - Lifetime CN100592474C (zh) | 2001-11-13 | 2002-10-03 | 研磨垫及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7651761B2 (zh) |
KR (8) | KR100877383B1 (zh) |
CN (1) | CN100592474C (zh) |
WO (1) | WO2003043071A1 (zh) |
Families Citing this family (126)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6777455B2 (en) * | 2000-06-13 | 2004-08-17 | Toyo Tire & Rubber Co., Ltd. | Process for producing polyurethane foam |
JP3455187B2 (ja) * | 2001-02-01 | 2003-10-14 | 東洋ゴム工業株式会社 | 研磨パッド用ポリウレタン発泡体の製造装置 |
US7267607B2 (en) * | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
WO2004049417A1 (ja) * | 2002-11-27 | 2004-06-10 | Toyo Tire & Rubber Co., Ltd. | 研磨パッド及び半導体デバイスの製造方法 |
JP3910921B2 (ja) * | 2003-02-06 | 2007-04-25 | 株式会社東芝 | 研磨布および半導体装置の製造方法 |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
SG153668A1 (en) | 2003-03-25 | 2009-07-29 | Neopad Technologies Corp | Customized polish pads for chemical mechanical planarization |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20050153631A1 (en) * | 2004-01-13 | 2005-07-14 | Psiloquest | System and method for monitoring quality control of chemical mechanical polishing pads |
JP3754436B2 (ja) | 2004-02-23 | 2006-03-15 | 東洋ゴム工業株式会社 | 研磨パッドおよびそれを使用する半導体デバイスの製造方法 |
US7189156B2 (en) | 2004-08-25 | 2007-03-13 | Jh Rhodes Company, Inc. | Stacked polyurethane polishing pad and method of producing the same |
US20070254191A1 (en) * | 2004-08-30 | 2007-11-01 | Showa Denko K.K. | Magnetic Disk Substrate and Production Method of Magnetic Disk |
JP4475404B2 (ja) * | 2004-10-14 | 2010-06-09 | Jsr株式会社 | 研磨パッド |
JP3769581B1 (ja) * | 2005-05-18 | 2006-04-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法 |
TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
KR100909605B1 (ko) * | 2005-03-08 | 2009-07-27 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
KR100949560B1 (ko) | 2005-05-17 | 2010-03-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP4897238B2 (ja) * | 2005-05-17 | 2012-03-14 | 東洋ゴム工業株式会社 | 研磨パッド |
CN101724167B (zh) * | 2005-07-15 | 2013-06-26 | 东洋橡胶工业株式会社 | 层叠片及其制造方法 |
JP4884726B2 (ja) * | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | 積層研磨パッドの製造方法 |
JP4884725B2 (ja) * | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | 研磨パッド |
TWI403387B (zh) * | 2005-09-22 | 2013-08-01 | Kuraray Co | 高分子材料、由它得到之發泡體及使用它之研磨墊 |
US20070117393A1 (en) * | 2005-11-21 | 2007-05-24 | Alexander Tregub | Hardened porous polymer chemical mechanical polishing (CMP) pad |
DE102005060754A1 (de) * | 2005-12-16 | 2007-07-05 | Kronotec Ag | Verfahren und Anlage zum Aufbringen fester Partikel auf ein Substrat |
JP5031236B2 (ja) | 2006-01-10 | 2012-09-19 | 東洋ゴム工業株式会社 | 研磨パッド |
CN101426618B (zh) | 2006-04-19 | 2013-05-15 | 东洋橡胶工业株式会社 | 抛光垫的制造方法 |
KR101107043B1 (ko) | 2006-08-28 | 2012-01-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP5008927B2 (ja) | 2006-08-31 | 2012-08-22 | 東洋ゴム工業株式会社 | 研磨パッド |
WO2008029537A1 (fr) * | 2006-09-08 | 2008-03-13 | Toyo Tire & Rubber Co., Ltd. | Procédé de production d'un tampon à polir |
KR101181885B1 (ko) * | 2006-09-08 | 2012-09-11 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
WO2008035666A1 (fr) * | 2006-09-20 | 2008-03-27 | Konica Minolta Opto, Inc. | Procédé pour traiter un disque en verre |
US20080171493A1 (en) * | 2007-01-12 | 2008-07-17 | San Fang Chemical Industry Co., Ltd. | Polishing pad and method of producing the same |
SG177963A1 (en) | 2007-01-15 | 2012-02-28 | Toyo Tire & Rubber Co | Polishing pad and method for producing the same |
CA2600559A1 (en) * | 2007-02-05 | 2008-08-05 | American Fuji Seal, Inc. | Heat shrinkable foamed sheet |
US8308527B2 (en) * | 2007-03-20 | 2012-11-13 | Kuraray Co., Ltd. | Metal film polishing pad and method for polishing metal film using the same |
JP5078000B2 (ja) | 2007-03-28 | 2012-11-21 | 東洋ゴム工業株式会社 | 研磨パッド |
US8388799B2 (en) * | 2008-01-24 | 2013-03-05 | Jsr Corporation | Composition for forming polishing layer of chemical mechanical polishing pad, chemical mechanical polishing pad and chemical mechanical polishing method |
MY148785A (en) * | 2008-01-30 | 2013-05-31 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk |
JP4593643B2 (ja) | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | 研磨パッド |
CN101570002B (zh) * | 2008-05-04 | 2014-08-13 | 世界先进积体电路股份有限公司 | 研磨设备 |
CN101633150B (zh) * | 2008-07-24 | 2012-05-30 | 贝达先进材料股份有限公司 | 研磨垫及其微型结构形成方法 |
EP2349120B1 (en) * | 2008-09-04 | 2017-03-22 | Iwalk, Inc. | Hybrid terrain-adaptive lower-extremity systems |
JP5393434B2 (ja) * | 2008-12-26 | 2014-01-22 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
US8303375B2 (en) | 2009-01-12 | 2012-11-06 | Novaplanar Technology, Inc. | Polishing pads for chemical mechanical planarization and/or other polishing methods |
US20100178853A1 (en) * | 2009-01-12 | 2010-07-15 | Novaplanar Technology, Inc. | Polishing pads for chemical mechanical planarization and/or other polishing methods |
DE102009030297B3 (de) * | 2009-06-24 | 2011-01-20 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
KR101750775B1 (ko) | 2009-06-29 | 2017-06-26 | 디아이씨 가부시끼가이샤 | 연마 패드용 2액형 우레탄 수지 조성물, 폴리우레탄 연마 패드, 및 폴리우레탄 연마 패드의 제조 방법 |
EP2287254A1 (de) * | 2009-07-10 | 2011-02-23 | Evonik Goldschmidt GmbH | Kompositformkörper enthaltend oberflächenaktives Additiv |
US8551201B2 (en) * | 2009-08-07 | 2013-10-08 | Praxair S.T. Technology, Inc. | Polyurethane composition for CMP pads and method of manufacturing same |
US8342908B2 (en) * | 2009-08-31 | 2013-01-01 | United Technologies Corporation | Thermal mechanical skive for composite machining |
JP5528169B2 (ja) | 2010-03-26 | 2014-06-25 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法 |
TWI510328B (zh) * | 2010-05-03 | 2015-12-01 | Iv Technologies Co Ltd | 基底層、包括此基底層的研磨墊及研磨方法 |
US9156124B2 (en) * | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
MY159320A (en) * | 2010-10-26 | 2016-12-30 | Rohm & Haas Elect Materials Cmp Holdings Inc | Polishing pad and method for producing same |
MY164897A (en) * | 2010-10-26 | 2018-01-30 | Rohm & Haas Elect Materials Cmp Holdings Inc | Polishing pad and method for producing same |
JP5479390B2 (ja) | 2011-03-07 | 2014-04-23 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
JP5710353B2 (ja) * | 2011-04-15 | 2015-04-30 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP5687119B2 (ja) * | 2011-04-15 | 2015-03-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP2012256846A (ja) * | 2011-05-16 | 2012-12-27 | Elpida Memory Inc | 半導体装置の製造方法 |
KR101532990B1 (ko) * | 2011-09-22 | 2015-07-01 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP5945874B2 (ja) * | 2011-10-18 | 2016-07-05 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP5759888B2 (ja) * | 2011-12-28 | 2015-08-05 | 東洋ゴム工業株式会社 | 研磨パッド |
KR20130090209A (ko) * | 2012-02-03 | 2013-08-13 | 삼성전자주식회사 | 기판처리장치 및 기판처리방법 |
JP5789634B2 (ja) * | 2012-05-14 | 2015-10-07 | 株式会社荏原製作所 | ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法 |
US9034063B2 (en) | 2012-09-27 | 2015-05-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing grooved chemical mechanical polishing layers |
US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
US9144880B2 (en) | 2012-11-01 | 2015-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad |
JP5661129B2 (ja) | 2013-01-29 | 2015-01-28 | 東洋ゴム工業株式会社 | 研磨パッド |
JP6016301B2 (ja) * | 2013-02-13 | 2016-10-26 | 昭和電工株式会社 | 単結晶SiC基板の表面加工方法、その製造方法及び単結晶SiC基板の表面加工用研削プレート |
US9238295B2 (en) | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical window polishing pad |
US9238296B2 (en) | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer |
US9233451B2 (en) | 2013-05-31 | 2016-01-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad stack |
CN103333313B (zh) * | 2013-06-09 | 2015-11-18 | 合肥宏光研磨科技有限公司 | 一种聚氨酯抛光材料的制造方法 |
US20140370788A1 (en) * | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
DE112014003946B4 (de) * | 2013-08-28 | 2020-11-26 | Sumco Corporation | Verfahren zum Waferpolieren |
KR101760495B1 (ko) * | 2013-10-04 | 2017-07-21 | 주식회사 엘지화학 | 폴리우레탄 지지 패드의 제조 방법 |
CN103862365B (zh) * | 2014-01-21 | 2016-05-04 | 湖北鼎龙化学股份有限公司 | 聚氨酯材料抛光垫及其制备方法 |
CN103862364A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 研磨垫、研磨机台及研磨方法 |
KR102350350B1 (ko) * | 2014-04-03 | 2022-01-14 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
US20150306731A1 (en) | 2014-04-25 | 2015-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US9649741B2 (en) | 2014-07-07 | 2017-05-16 | Jh Rhodes Company, Inc. | Polishing material for polishing hard surfaces, media including the material, and methods of forming and using same |
US9731398B2 (en) * | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
US9776361B2 (en) * | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US9481070B2 (en) * | 2014-12-19 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-stability polyurethane polishing pad |
EP3234986B1 (en) | 2014-12-19 | 2023-03-08 | Applied Materials, Inc. | Components for a chemical mechanical polishing tool |
TWI565735B (zh) * | 2015-08-17 | 2017-01-11 | Nanya Plastics Corp | A polishing pad for surface planarization processing and a process for making the same |
US9484212B1 (en) | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
KR102041588B1 (ko) | 2016-09-29 | 2019-11-06 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
CN106826540A (zh) * | 2017-02-15 | 2017-06-13 | 蓝思科技(长沙)有限公司 | 一种光固型树脂研磨垫及其制备方法 |
US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
JP7259311B2 (ja) * | 2017-12-26 | 2023-04-18 | Dic株式会社 | 研磨パッド及び研磨パッド用ウレタン樹脂組成物 |
KR101959555B1 (ko) * | 2018-04-13 | 2019-03-18 | 에스케이씨 주식회사 | 연마패드 제조용 우레탄계 프리폴리머, 연마패드 및 이의 제조방법 |
CN109048698B (zh) * | 2018-06-22 | 2020-08-28 | 广东伟艺研磨技术开发有限公司 | 一种聚氨酯抛磨轮及其制备方法 |
TWI738323B (zh) * | 2019-05-07 | 2021-09-01 | 美商Cmc材料股份有限公司 | 化學機械拋光墊及化學機械拋光晶圓之方法 |
US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
KR102287235B1 (ko) * | 2019-10-30 | 2021-08-06 | 에스케이씨솔믹스 주식회사 | 가교도가 조절된 연마패드 및 이의 제조방법 |
TWI761921B (zh) | 2019-10-30 | 2022-04-21 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
US11484987B2 (en) | 2020-03-09 | 2022-11-01 | Applied Materials, Inc. | Maintenance methods for polishing systems and articles related thereto |
KR102206485B1 (ko) * | 2020-03-17 | 2021-01-22 | 에스케이씨 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
JP7105334B2 (ja) * | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー,リミテッド | 研磨パッドおよびこれを用いた半導体素子の製造方法 |
KR102239633B1 (ko) * | 2020-04-02 | 2021-04-13 | 주식회사 에이앤피티 | 동 재질 시편 세척기 |
EP3967452A1 (en) * | 2020-09-07 | 2022-03-16 | SKC Solmics Co., Ltd. | Polishing pad and method of fabricating semiconductor device using the same |
KR102423956B1 (ko) * | 2020-09-07 | 2022-07-21 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR102245260B1 (ko) * | 2020-10-06 | 2021-04-26 | 에스케이씨솔믹스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
KR102510019B1 (ko) * | 2020-10-06 | 2023-03-13 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
EP3978190A1 (en) * | 2020-09-29 | 2022-04-06 | SKC Solmics Co., Ltd. | Polishing pad and method of fabricating semiconductor device using the same |
KR102420673B1 (ko) * | 2020-09-29 | 2022-07-13 | 에스케이씨솔믹스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR102431390B1 (ko) * | 2020-10-06 | 2022-08-10 | 에스케이씨솔믹스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
CN112223880B (zh) * | 2020-10-16 | 2023-01-17 | 上海江丰平芯电子科技有限公司 | 一种研磨垫的制备方法 |
US11618814B2 (en) | 2020-12-04 | 2023-04-04 | Covestro Llc | Elastomeric compositions containing a solid residue of isocyanate manufacturing |
US11772230B2 (en) * | 2021-01-21 | 2023-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith |
CN112809548A (zh) * | 2021-02-24 | 2021-05-18 | 合肥铨得合半导体有限责任公司 | 一种调整pu材料研磨垫亲疏水性的方法 |
KR102572960B1 (ko) * | 2021-06-10 | 2023-09-01 | 에프엔에스테크 주식회사 | 복수의 패턴 구조체를 포함하는 연마 패드 |
KR20230128811A (ko) | 2022-02-28 | 2023-09-05 | 원그램솔루션 주식회사 | 디스플레이 패널용 진공 흡착기 |
CN114750467B (zh) * | 2022-03-18 | 2023-08-15 | 安徽禾臣新材料有限公司 | 一种半导体加工用无蜡垫及其制备方法 |
KR20230153659A (ko) | 2022-04-29 | 2023-11-07 | 케이피엑스케미칼 주식회사 | 개선된 성능을 갖는 연마패드 |
CN115157111B (zh) * | 2022-07-13 | 2024-03-15 | 安徽禾臣新材料有限公司 | 一种玻璃加工用抛光垫及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000178374A (ja) | 1998-12-15 | 2000-06-27 | Toyo Tire & Rubber Co Ltd | ポリウレタン発泡体の製造方法及び研磨シート |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769245A (en) * | 1972-05-30 | 1973-10-30 | Goodrich Co B F | Thermoplastic polyurethane foam |
US4753838A (en) * | 1986-06-16 | 1988-06-28 | Tsuguji Kimura | Polishing sheet material and method for its production |
BR8701098A (pt) * | 1987-03-11 | 1988-09-13 | Brastemp Sa | Processo de preparacao de poliuretano rigido |
JPS63283857A (ja) * | 1987-05-15 | 1988-11-21 | Asahi Chem Ind Co Ltd | 研磨布 |
JP2878282B2 (ja) * | 1988-03-01 | 1999-04-05 | 藤倉ゴム工業株式会社 | 研磨材用ポリウレタン組成物およびポリウレタン発泡体の製造方法 |
JP2543404B2 (ja) | 1989-03-01 | 1996-10-16 | 住友化学工業株式会社 | 研磨研削材料 |
EP0559216A1 (en) * | 1992-03-06 | 1993-09-08 | Tosoh Corporation | Process for producing urethan foam having high-density skin layer |
GB9216631D0 (en) * | 1992-08-05 | 1992-09-16 | Ici Plc | Reaction system for preparing microcellular elastomers |
JPH06220151A (ja) | 1993-01-22 | 1994-08-09 | Sanyo Chem Ind Ltd | 研磨材用ポリウレタン樹脂 |
JP2891083B2 (ja) | 1993-12-14 | 1999-05-17 | 信越半導体株式会社 | シート状研磨部材およびウエーハ研磨装置 |
US5564965A (en) * | 1993-12-14 | 1996-10-15 | Shin-Etsu Handotai Co., Ltd. | Polishing member and wafer polishing apparatus |
JP3660375B2 (ja) | 1994-06-30 | 2005-06-15 | 住化バイエルウレタン株式会社 | ポリウレタン発泡体の製造法 |
JPH0885069A (ja) | 1994-09-16 | 1996-04-02 | Mitsuwa:Kk | 研摩シート保持具 |
JP3354744B2 (ja) | 1995-04-25 | 2002-12-09 | ニッタ株式会社 | 研磨布及びその研磨布の研磨機定盤への脱着方法 |
JPH0957608A (ja) | 1995-08-11 | 1997-03-04 | Sony Corp | 研磨パッド及びこれを用いた被表面処理加工物の研磨方法 |
JP3042593B2 (ja) * | 1995-10-25 | 2000-05-15 | 日本電気株式会社 | 研磨パッド |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
US5627254A (en) * | 1996-05-03 | 1997-05-06 | The Dow Chemical Company | Rigid thermoplastic plyurethane comprising units of butane diol and a polyethylene glycol |
JP3007603B2 (ja) | 1997-04-30 | 2000-02-07 | 鐘紡株式会社 | 防水通気緩衝シートおよびそれを用いた複合被覆防水工法 |
JPH11302355A (ja) | 1998-04-23 | 1999-11-02 | Dainippon Ink & Chem Inc | 発泡ポリウレタンエラストマー組成物及び防振材 |
US6200901B1 (en) * | 1998-06-10 | 2001-03-13 | Micron Technology, Inc. | Polishing polymer surfaces on non-porous CMP pads |
JP2000017252A (ja) * | 1998-06-29 | 2000-01-18 | Dainippon Ink & Chem Inc | 研磨材組成物及びその研磨材 |
US6022903A (en) * | 1998-07-09 | 2000-02-08 | Arco Chemical Technology L.P. | Permanent gas blown microcellular polyurethane elastomers |
US6410608B1 (en) * | 1998-07-31 | 2002-06-25 | Kao Corporation | Process for producing polyurethane foam |
DE69937355T2 (de) * | 1998-08-28 | 2008-07-24 | Toray Industries, Inc. | Polierkissen |
JP3823308B2 (ja) | 1998-12-03 | 2006-09-20 | 俊郎 土肥 | 半導体デバイス研磨装置及びポリシングパッド |
JP4080628B2 (ja) | 1999-03-30 | 2008-04-23 | 日本発条株式会社 | 再剥離性発泡体ガスケット |
TWI228522B (en) * | 1999-06-04 | 2005-03-01 | Fuji Spinning Co Ltd | Urethane molded products for polishing pad and method for making same |
JP3316757B2 (ja) | 1999-06-04 | 2002-08-19 | 富士紡績株式会社 | 研磨パッド用ウレタン成形物の製造方法及び研磨パッド用ウレタン成形物 |
JP4501175B2 (ja) | 1999-06-09 | 2010-07-14 | 東レ株式会社 | 研磨パッドの製造方法 |
JP3880028B2 (ja) | 1999-08-06 | 2007-02-14 | Jsr株式会社 | 研磨パッド用重合体組成物及びそれを用いた研磨パッド |
JP3558273B2 (ja) | 1999-09-22 | 2004-08-25 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法及び研磨シート |
US6361409B1 (en) | 1999-09-28 | 2002-03-26 | Rodel Holdings Inc. | Polymeric polishing pad having improved surface layer and method of making same |
JP2001138249A (ja) | 1999-11-12 | 2001-05-22 | Nihon Micro Coating Co Ltd | 研磨シート及びその製造方法 |
JP2001176829A (ja) | 1999-12-20 | 2001-06-29 | Nitto Denko Corp | 半導体ウェーハの研磨方法及び半導体ウェーハ研磨用パッド |
JP2001179608A (ja) * | 1999-12-22 | 2001-07-03 | Toray Ind Inc | 研磨用パッドおよびそれを用いた研磨装置及び研磨方法 |
US6437013B2 (en) * | 2000-02-17 | 2002-08-20 | Mitsui Chemicals, Inc. | Microcellular polyurethane elastomer, and method of producing the same |
JP2001277101A (ja) | 2000-03-28 | 2001-10-09 | Rodel Nitta Co | 研磨布 |
JP2001357101A (ja) | 2000-06-12 | 2001-12-26 | Dainippon Printing Co Ltd | 行程案内システム |
US6777455B2 (en) * | 2000-06-13 | 2004-08-17 | Toyo Tire & Rubber Co., Ltd. | Process for producing polyurethane foam |
JP2001358101A (ja) * | 2000-06-13 | 2001-12-26 | Toray Ind Inc | 研磨パッド |
JP2002124491A (ja) | 2000-08-10 | 2002-04-26 | Toray Ind Inc | 研磨パッド |
JP3788729B2 (ja) | 2000-08-23 | 2006-06-21 | 東洋ゴム工業株式会社 | 研磨パッド |
JP4686912B2 (ja) | 2001-06-15 | 2011-05-25 | 東レ株式会社 | 研磨パッド |
-
2002
- 2002-10-03 KR KR1020087006773A patent/KR100877383B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006778A patent/KR100877542B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006777A patent/KR100877386B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006776A patent/KR100877385B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006782A patent/KR100877390B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006780A patent/KR100877389B1/ko active IP Right Grant
- 2002-10-03 KR KR1020087006779A patent/KR100877388B1/ko active IP Right Grant
- 2002-10-03 CN CN02822514A patent/CN100592474C/zh not_active Expired - Lifetime
- 2002-10-03 WO PCT/JP2002/010310 patent/WO2003043071A1/ja active Application Filing
- 2002-10-03 KR KR1020047007185A patent/KR100845481B1/ko active IP Right Grant
- 2002-10-03 US US10/494,249 patent/US7651761B2/en not_active Expired - Lifetime
-
2006
- 2006-08-24 US US11/466,878 patent/US8318825B2/en not_active Expired - Lifetime
- 2006-08-24 US US11/466,909 patent/US7488236B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000178374A (ja) | 1998-12-15 | 2000-06-27 | Toyo Tire & Rubber Co Ltd | ポリウレタン発泡体の製造方法及び研磨シート |
Also Published As
Publication number | Publication date |
---|---|
KR20080031528A (ko) | 2008-04-08 |
KR100877389B1 (ko) | 2009-01-07 |
KR20080031523A (ko) | 2008-04-08 |
US20060280930A1 (en) | 2006-12-14 |
KR20080031527A (ko) | 2008-04-08 |
KR100877542B1 (ko) | 2009-01-07 |
KR20080031529A (ko) | 2008-04-08 |
KR100877385B1 (ko) | 2009-01-07 |
WO2003043071A1 (fr) | 2003-05-22 |
KR20080031526A (ko) | 2008-04-08 |
US8318825B2 (en) | 2012-11-27 |
KR20080031525A (ko) | 2008-04-08 |
KR100877383B1 (ko) | 2009-01-07 |
KR20080031524A (ko) | 2008-04-08 |
KR100877388B1 (ko) | 2009-01-07 |
KR100845481B1 (ko) | 2008-07-10 |
US20050064709A1 (en) | 2005-03-24 |
US20060280929A1 (en) | 2006-12-14 |
US7651761B2 (en) | 2010-01-26 |
KR100877390B1 (ko) | 2009-01-07 |
KR100877386B1 (ko) | 2009-01-07 |
KR20050033540A (ko) | 2005-04-12 |
CN1586002A (zh) | 2005-02-23 |
US7488236B2 (en) | 2009-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100592474C (zh) | 研磨垫及其制造方法 | |
KR101399516B1 (ko) | 연마 패드 및 그 제조 방법 | |
JP5393434B2 (ja) | 研磨パッド及びその製造方法 | |
CN101148031B (zh) | 研磨垫及其制造方法 | |
JP2003218074A (ja) | 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法 | |
JP4986129B2 (ja) | 研磨パッド | |
JP5426469B2 (ja) | 研磨パッドおよびガラス基板の製造方法 | |
JP5528169B2 (ja) | 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法 | |
JP4237800B2 (ja) | 研磨パッド | |
JP5465578B2 (ja) | 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法 | |
JP2009214220A (ja) | 研磨パッド | |
JP5184200B2 (ja) | 研磨パッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: TOYO TIRE + RUBBER CO.,LTD Effective date: 20050218 Owner name: TOYO TIRE & RUBBER CO.,LTD Free format text: FORMER OWNER: TOYO BOSEKI K.K. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20050218 Address after: Osaka City, Osaka of Japan Applicant after: TOYO TIRE & RUBBER Co.,Ltd. Address before: Japan's Osaka City of Osaka Applicant before: TOYOBO CO.,LTD. Co-applicant before: TOYO TIRE & RUBBER Co.,Ltd. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160905 Address after: Delaware Patentee after: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc. Address before: Osaka City, Osaka of Japan Patentee before: TOYO TIRE & RUBBER Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100224 |