CN101013600B - 非易失性半导体存储器 - Google Patents
非易失性半导体存储器 Download PDFInfo
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- CN101013600B CN101013600B CN2007100067393A CN200710006739A CN101013600B CN 101013600 B CN101013600 B CN 101013600B CN 2007100067393 A CN2007100067393 A CN 2007100067393A CN 200710006739 A CN200710006739 A CN 200710006739A CN 101013600 B CN101013600 B CN 101013600B
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- 238000003860 storage Methods 0.000 claims description 84
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- 238000007667 floating Methods 0.000 description 25
- 238000002955 isolation Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 12
- 101100190847 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PMP3 gene Proteins 0.000 description 8
- 101100366061 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SNA2 gene Proteins 0.000 description 8
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- 101150073246 AGL1 gene Proteins 0.000 description 3
- 102100027302 Interferon-induced protein with tetratricopeptide repeats 3 Human genes 0.000 description 3
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- 101100421857 Caenorhabditis elegans sod-2 gene Proteins 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006027010A JP2007207380A (ja) | 2006-02-03 | 2006-02-03 | 不揮発性半導体記憶装置 |
JP2006027010 | 2006-02-03 | ||
JP2006-027010 | 2006-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101013600A CN101013600A (zh) | 2007-08-08 |
CN101013600B true CN101013600B (zh) | 2010-12-08 |
Family
ID=38333882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100067393A Expired - Fee Related CN101013600B (zh) | 2006-02-03 | 2007-02-02 | 非易失性半导体存储器 |
Country Status (5)
Country | Link |
---|---|
US (4) | US7411834B2 (zh) |
JP (1) | JP2007207380A (zh) |
KR (1) | KR20070079936A (zh) |
CN (1) | CN101013600B (zh) |
TW (1) | TW200741722A (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7706185B2 (en) * | 2007-04-09 | 2010-04-27 | Macronix International Co., Ltd. | Reading circuitry in memory |
CN101779298B (zh) | 2007-08-09 | 2012-02-01 | 三菱电机株式会社 | 太阳能电池板 |
JP2009076188A (ja) * | 2007-08-24 | 2009-04-09 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
JP2009141278A (ja) * | 2007-12-10 | 2009-06-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9349738B1 (en) * | 2008-02-04 | 2016-05-24 | Broadcom Corporation | Content addressable memory (CAM) device having substrate array line structure |
JP2010050208A (ja) * | 2008-08-20 | 2010-03-04 | Renesas Technology Corp | 半導体記憶装置 |
JP5086959B2 (ja) * | 2008-09-26 | 2012-11-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5193815B2 (ja) * | 2008-11-12 | 2013-05-08 | 株式会社東芝 | 半導体記憶装置 |
US8102709B2 (en) * | 2009-06-02 | 2012-01-24 | Micron Technology, Inc. | Transistor having peripheral channel |
KR101642819B1 (ko) * | 2009-08-31 | 2016-07-26 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 구동 방법, 그것을 포함하는 메모리 시스템 |
US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US9711237B2 (en) * | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
JP2013058276A (ja) | 2011-09-07 | 2013-03-28 | Toshiba Corp | 半導体記憶装置 |
KR102011466B1 (ko) | 2012-08-29 | 2019-08-16 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
KR102041372B1 (ko) * | 2013-05-23 | 2019-11-07 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
US9922715B2 (en) * | 2014-10-03 | 2018-03-20 | Silicon Storage Technology, Inc. | Non-volatile split gate memory device and a method of operating same |
CN106469563B (zh) * | 2015-08-17 | 2018-12-18 | 旺宏电子股份有限公司 | 具有区域译码器的阵列架构 |
US9972395B2 (en) * | 2015-10-05 | 2018-05-15 | Silicon Storage Technology, Inc. | Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems |
KR102381046B1 (ko) * | 2015-10-26 | 2022-03-31 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 |
KR102222538B1 (ko) * | 2017-04-07 | 2021-03-05 | 삼성전자주식회사 | 반도체 장치 |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
TWI779069B (zh) * | 2017-07-30 | 2022-10-01 | 埃拉德 希提 | 具有以記憶體為基礎的分散式處理器架構的記憶體晶片 |
US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
JP7065637B2 (ja) * | 2018-02-22 | 2022-05-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20220022157A (ko) * | 2020-08-18 | 2022-02-25 | 에스케이하이닉스 주식회사 | 패스 트랜지스터들을 구비하는 메모리 장치 |
CN112180239B (zh) * | 2020-09-27 | 2022-01-21 | 江苏东海半导体科技有限公司 | 一种集成电路输入端输出端口可靠性问题的检测方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532971A (en) * | 1993-12-15 | 1996-07-02 | Hitachi, Ltd. | Nonvolatile semiconductor memory having enhanced speed for erasing and programming |
US5652450A (en) * | 1995-08-11 | 1997-07-29 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor storage device |
CN101138048A (zh) * | 2005-03-08 | 2008-03-05 | 斯班逊有限公司 | 内存装置使用的译码器 |
Family Cites Families (23)
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DE2232463C3 (de) * | 1972-07-01 | 1980-05-08 | Bayer Ag, 5090 Leverkusen | Polybenz-13-oxazindione-(2,4), Verfahren zu ihrer Herstellung und ihre Verwendung- |
JP2835215B2 (ja) * | 1991-07-25 | 1998-12-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP3036910B2 (ja) * | 1991-08-20 | 2000-04-24 | 沖電気工業株式会社 | Cmosデコード回路 |
KR940008132B1 (ko) | 1991-11-28 | 1994-09-03 | 삼성전자 주식회사 | 신호선간의 잡음을 억제하는 메모리 소자 |
WO1993012525A1 (en) | 1991-12-09 | 1993-06-24 | Fujitsu Limited | Flash memory improved in erasing characteristic, and circuit therefor |
JPH06168597A (ja) * | 1992-03-19 | 1994-06-14 | Fujitsu Ltd | フラッシュメモリ及びレベル変換回路 |
US5661683A (en) * | 1996-02-05 | 1997-08-26 | Integrated Silicon Solution Inc. | On-chip positive and negative high voltage wordline x-decoding for EPROM/FLASH |
US6207998B1 (en) * | 1998-07-23 | 2001-03-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with well of different conductivity types |
JP4012341B2 (ja) | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4503809B2 (ja) * | 2000-10-31 | 2010-07-14 | 株式会社東芝 | 半導体記憶装置 |
JP4565767B2 (ja) * | 2001-04-11 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US6549479B2 (en) * | 2001-06-29 | 2003-04-15 | Micron Technology, Inc. | Memory device and method having reduced-power self-refresh mode |
JP2003141887A (ja) * | 2001-11-01 | 2003-05-16 | Hitachi Ltd | 不揮発性半導体記憶装置 |
EP1339069B1 (en) * | 2002-02-20 | 2004-07-07 | STMicroelectronics S.r.l. | Word line selector for a semiconductor memory |
JP3857640B2 (ja) | 2002-11-29 | 2006-12-13 | 株式会社東芝 | 半導体記憶装置 |
JP2005039016A (ja) * | 2003-07-18 | 2005-02-10 | Toshiba Corp | 不揮発性半導体記憶装置、電子カード及び電子装置 |
KR100559715B1 (ko) | 2004-02-25 | 2006-03-10 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 소자의 소거 방법 |
EP1788578B1 (en) * | 2004-08-31 | 2011-05-11 | Spansion LLc | Non-volatile storage device and control method thereof |
US7274618B2 (en) * | 2005-06-24 | 2007-09-25 | Monolithic System Technology, Inc. | Word line driver for DRAM embedded in a logic process |
US7468906B2 (en) * | 2005-09-13 | 2008-12-23 | Northern Lights Semiconductor Corp. | Word driver and decode design methodology in MRAM circuit |
JP4874721B2 (ja) * | 2006-06-23 | 2012-02-15 | 株式会社東芝 | 半導体記憶装置 |
JP2008010082A (ja) * | 2006-06-29 | 2008-01-17 | Nec Electronics Corp | 不揮発性半導体記憶装置及びワード線駆動方法 |
JP5224659B2 (ja) * | 2006-07-13 | 2013-07-03 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
-
2006
- 2006-02-03 JP JP2006027010A patent/JP2007207380A/ja active Pending
-
2007
- 2007-01-31 TW TW096103472A patent/TW200741722A/zh unknown
- 2007-02-02 KR KR1020070011103A patent/KR20070079936A/ko not_active Application Discontinuation
- 2007-02-02 CN CN2007100067393A patent/CN101013600B/zh not_active Expired - Fee Related
- 2007-02-02 US US11/701,404 patent/US7411834B2/en not_active Expired - Fee Related
-
2008
- 2008-07-07 US US12/216,489 patent/US7596033B2/en active Active
-
2009
- 2009-08-24 US US12/546,062 patent/US7859909B2/en active Active
-
2010
- 2010-11-11 US US12/944,358 patent/US8085598B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532971A (en) * | 1993-12-15 | 1996-07-02 | Hitachi, Ltd. | Nonvolatile semiconductor memory having enhanced speed for erasing and programming |
US5652450A (en) * | 1995-08-11 | 1997-07-29 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor storage device |
CN101138048A (zh) * | 2005-03-08 | 2008-03-05 | 斯班逊有限公司 | 内存装置使用的译码器 |
Also Published As
Publication number | Publication date |
---|---|
US7859909B2 (en) | 2010-12-28 |
CN101013600A (zh) | 2007-08-08 |
US7411834B2 (en) | 2008-08-12 |
US20110058426A1 (en) | 2011-03-10 |
US20080273396A1 (en) | 2008-11-06 |
US20070183213A1 (en) | 2007-08-09 |
US7596033B2 (en) | 2009-09-29 |
JP2007207380A (ja) | 2007-08-16 |
US8085598B2 (en) | 2011-12-27 |
US20090310410A1 (en) | 2009-12-17 |
TW200741722A (en) | 2007-11-01 |
KR20070079936A (ko) | 2007-08-08 |
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