CN101159228B - Processing gas supplying mechanism, supplying method and gas processing unit - Google Patents
Processing gas supplying mechanism, supplying method and gas processing unit Download PDFInfo
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- CN101159228B CN101159228B CN200710154446XA CN200710154446A CN101159228B CN 101159228 B CN101159228 B CN 101159228B CN 200710154446X A CN200710154446X A CN 200710154446XA CN 200710154446 A CN200710154446 A CN 200710154446A CN 101159228 B CN101159228 B CN 101159228B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/50—Filling, e.g. selection of gas mixture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/54—Means for exhausting the gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention relates to a treatment gas supplying mechanism, supplying method and gas treatment device, wherein the treatment gas supplying mechanism supplies treatment gas for making the treatment container at preset pressure in short time. The treatment gas supplying mechanism (3) comprises: a He gas supply resource (30) for supplying helium gas as treatment gas to a chamber (2) as treatment container of holding substrate; a treatment gas jar (33) for temporarily storing helium gas from the He gas supply resource (30); a treatment gas circulating parts (35) for supplying helium gas from the He gas supply resource (30) to the treatment gas jar (33) and supplying the helium gas from the treatment gas jar (33) to chamber (2), wherein the helium gas is temporarily stored in the treatment gas jar (33) from the He gas supply resource (30) through the treatment gas circulating parts (35) and supplied to the chamber (2) from the treatment gas jar (33).
Description
Technical field
The gas treatment equipment that the present invention relates to handle gas supply mechanism and handle the gas supply method and possess this processing gas supply mechanism, it supplies with processing gas according to the mode of the handled objects such as glass substrate that are housed in flat-panel monitor (FPD) usefulness in the container handling being implemented predetermined process in container handling.
Background technology
In the process for making of FPD, implement predetermined process such as etch processes or film forming processing for glass substrate that the FPD as handled object is used and using the plasma processing apparatus of plasma-etching apparatus or plasma CVD film formation device etc.In plasma processing apparatus; Generally speaking; Glass substrate is put carrying in container handling and put under the state on the platform being carried, through the plasma that produces the processing gas that high-frequency electric field generates when handling gas handles in container handling, supplying with.
In container handling, supply with and handle gas normally via an end and the streams such as pipe arrangement that processing gas supply source is connected, the other end is being connected with container handling, and (for example with reference to the patent documentation 1) that in through flow adjusting mechanisms such as mass flow controller adjustment flow, carried out.
But recently, FPD develops towards the direction that maximizes; Even the huge glass substrate of 2m also appearred surpassing on one side; It is big that container handling also becomes thereupon, therefore, if use the processing gas supply mode of said prior art; Then reach setting pressure and then need long time, so the problem that throughput descends will occur from beginning to supply with the pressure of handling in gas to the container handling.
[patent documentation 1] TOHKEMY 2002-313898 communique
Summary of the invention
The present invention is exactly In view of the foregoing and produces, and its purpose is to provide to supply with at short notice and makes the processing gas supply mechanism of the processing gas that becomes setting pressure in the container handling and the storage medium of handling the gas supply method, possessing the gas treatment equipment of such processing gas supply mechanism and storing the embodied on computer readable of the control program that is used to implement this processing gas supply method.
In order to solve above-mentioned problem; A kind of processing gas supply mechanism is provided in first viewpoint of the present invention; It is characterized in that; This processing gas supply mechanism is handled gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in above-mentioned container handling, and this processing gas supply mechanism comprises: be used in above-mentioned container handling, supplying with the processing gas supply source of handling gas; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source; And the processing gas in the above-mentioned processing gas tank supplied with the processing gas communication parts in the above-mentioned container handling; And; Handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In addition, in second viewpoint of the present invention, a kind of gas treatment equipment is provided, it is characterized in that, comprising: the container handling of accommodating handled object; In above-mentioned container handling, supply with the processing gas supply mechanism of handling gas; And to carrying out the exhaust unit of exhaust in the above-mentioned container handling; And; Under the state that handled object is housed in the above-mentioned container handling, utilize above-mentioned exhaust unit to carry out exhaust, utilize above-mentioned processing gas supply mechanism to supply with simultaneously and handle gas; Handled object is implemented predetermined processing, and above-mentioned processing gas supply mechanism comprises: be used in above-mentioned container handling, supplying with the processing gas supply source of handling gas; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source; And the processing gas in the above-mentioned processing gas tank supplied with the processing gas communication parts in the above-mentioned container handling; And; Handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In second viewpoint of the present invention, a kind of preferred implementation is arranged, above-mentioned processing gas communication parts comprise: the first processing gas flow path that is being connected with above-mentioned processing gas supply source and above-mentioned container handling; And from above-mentioned first handle gas flow path branch and be connected with above-mentioned processing gas tank second handle gas flow path, above-mentioned processing gas supply mechanism is also supplied with processing gas from above-mentioned processing gas supply source in above-mentioned container handling.
In this case; Another kind of preferred implementation is arranged; Be provided with a plurality of above-mentioned processing gas tank; And, corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, above-mentioned each second handle gas flow path and have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas.In this case; Also preferred; Comprise the control part of controlling above-mentioned processing gas supply mechanism; Above-mentioned control part is controlled as follows: make and handle gas and supply with in above-mentioned container handling through the above-mentioned stream of seeing off from the part of above-mentioned a plurality of processing gas tank, make simultaneously handle gas from above-mentioned processing gas supply source through above-mentioned send into stream be stored in the remaining part of above-mentioned a plurality of processing gas tank or all.
In other words, in this case, also have another kind of preferred implementation, above-mentioned second handles gas flow path has the stream of sending into that is used for processing gas is sent into above-mentioned processing gas tank respectively; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas; And be provided with a plurality of above-mentioned processing gas supply sources to supply with different multiple processing gas; And; Above-mentioned first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, above-mentioned second handle gas flow path above-mentioned send into stream be from above-mentioned first handle gas flow path above-mentioned each supply source connect stream branch.Moreover; In this case; Also can be preferred; Comprise the control part of controlling above-mentioned processing gas supply mechanism; Above-mentioned control part is controlled as follows: the processing gas be made up of regulation kind and ratio is seen off after stream supplies with in above-mentioned container handling through above-mentioned from above-mentioned processing gas tank, made the processing gas be made up of afore mentioned rules kind and ratio from the part of above-mentioned a plurality of processing gas supply sources or all handle gas flow path through above-mentioned first and in above-mentioned container handling, supply with, meanwhile; Make the processing gas of forming by the kind different and/or ratio, be stored in the above-mentioned processing gas tank through the above-mentioned stream of sending into from part or all of above-mentioned a plurality of processing gas supply sources with afore mentioned rules kind and ratio.
In addition; In this case; A kind of preferred implementation is arranged, be provided with a plurality of above-mentioned processing gas tank, and; Corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, above-mentioned each second handle gas flow path and have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas; Be provided with a plurality of above-mentioned processing gas supply sources to supply with different multiple processing gas; And; Above-mentioned first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, above-mentioned each second handle gas flow path above-mentioned send into stream be from above-mentioned first handle gas flow path above-mentioned each supply source connect stream branch.Moreover; In this case; Also preferred; Comprise the control part of controlling above-mentioned processing gas supply mechanism; Above-mentioned control part is controlled as follows: the processing gas of being made up of regulation kind and ratio is supplied with in above-mentioned container handling through the above-mentioned stream of seeing off from the part of above-mentioned a plurality of processing gas tank, and made the processing gas be made up of afore mentioned rules kind and ratio from the part of above-mentioned a plurality of processing gas supply sources or all handle gas flow path through above-mentioned first and in above-mentioned container handling, supply with, meanwhile; Make the processing gas of forming by the kind different and/or ratio, send into stream to be stored in above-mentioned a plurality of processing gas tank remaining part or all through above-mentioned from part or all of above-mentioned a plurality of processing gas supply sources with afore mentioned rules kind and ratio.
Moreover, in these cases, also can be above-mentioned first to handle gas flow path and have respectively: when making processing gas from above-mentioned processing gas supply source be stored in the above-mentioned processing gas tank and make the storage of its circulation use stream; And when will supplying with in the above-mentioned container handling and make the supply of its circulation use stream from the processing gas of above-mentioned processing gas supply source.
In addition, in above second viewpoint of the present invention, also have a kind of preferred implementation, above-mentioned exhaust unit has the exhaust flow path that a plurality of and above-mentioned container handling is being connected; And through above-mentioned exhaust flow path to carrying out the exhaust apparatus of exhaust in the above-mentioned container handling; In this case; On the part in above-mentioned processing gas communication parts and the above-mentioned a plurality of exhaust flow paths, be connected bypass flow path; The processing gas that constitutes in the above-mentioned processing gas communication parts can be discharged by above-mentioned exhaust unit through above-mentioned bypass flow path, and the above-mentioned exhaust flow path that is connecting above-mentioned bypass flow path also opens and closes by the upstream side at the upper reaches at the connecting portion than itself and above-mentioned bypass flow path freely.
In addition; In above second viewpoint of the present invention; Also preferred, in above-mentioned container handling, also possess plasma and generate mechanism; It generates the plasma of the processing gas of being supplied with by above-mentioned processing gas supply mechanism, and the processing of afore mentioned rules is being to use the Cement Composite Treated by Plasma of the plasma of handling gas.
In addition; A kind of processing gas supply method is provided in the 3rd viewpoint of the present invention; It is characterized in that; It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in above-mentioned container handling, prepare: be used in above-mentioned container handling, supplying with the processing gas supply source of handling gas; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source; And the processing gas in the above-mentioned processing gas tank supplied with the processing gas communication parts in the above-mentioned container handling; To handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In the 3rd viewpoint of the present invention, a kind of preferred implementation is arranged, in advance by the first processing gas flow path that is being connected with above-mentioned processing gas supply source and above-mentioned container handling; And from above-mentioned first handle gas flow path branch and be connected with above-mentioned processing gas tank second handle gas flow path and constitute above-mentioned processing gas communication parts, also in above-mentioned container handling, supplies with processing gas from above-mentioned processing gas supply source.
In this case; Also has another kind of preferred implementation; A plurality of above-mentioned processing gas tank are set, and corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas; Constitute above-mentioned each second processing gas flow path; In above-mentioned container handling, supply with processing gas from the part of above-mentioned a plurality of processing gas tank through the above-mentioned stream of seeing off; Simultaneously, from above-mentioned processing gas supply source through the above-mentioned stream storage at body of regulating the flow of vital energy or all of sending in the remaining part of above-mentioned a plurality of processing gas tank.
Perhaps, in this case, also have another kind of preferred implementation, have the stream of sending into that is used for processing gas is sent into above-mentioned processing gas tank respectively; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas; Constitute above-mentioned second and handle gas flow path; A plurality of above-mentioned processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with above-mentioned first constitutes to have and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream; Above-mentioned above-mentioned each supply source connection stream branch that sends into stream from the above-mentioned first processing gas flow path with the above-mentioned second processing gas flow path; From above-mentioned processing gas tank through above-mentioned see stream off and in above-mentioned container handling, supply with the processing gas of forming by regulation kind and ratio after; From the part of above-mentioned a plurality of processing gas supply sources or all handle gas flow path and in above-mentioned container handling, supply with the processing gas of forming by afore mentioned rules kind and ratio through above-mentioned first, meanwhile, from a part of of above-mentioned a plurality of processing gas supply sources or all above-mentioned processing gas tank, store the processing gas of forming by the kind different and/or ratio with afore mentioned rules kind and ratio through the above-mentioned stream of sending into.
In addition; In this case; Also has another kind of preferred implementation; A plurality of above-mentioned processing gas tank are set, and corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for seeing stream off from what above-mentioned processing gas tank was seen off with handling gas; Constitute above-mentioned each second processing gas flow path; A plurality of above-mentioned processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with above-mentioned first constitutes to have and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream; Above-mentioned above-mentioned each supply source connection stream branch that sends into stream from the above-mentioned first processing gas flow path with the above-mentioned second processing gas flow path; In above-mentioned container handling, supply with the processing gas of forming by regulation kind and ratio from the part of above-mentioned a plurality of processing gas tank through the above-mentioned stream of seeing off; And from above-mentioned a plurality of processing gas supply sources a part or all through above-mentioned first the processing gas flow path in above-mentioned container handling, supply with the processing gas of forming by afore mentioned rules kind and ratio; Meanwhile, from the part of above-mentioned a plurality of processing gas supply sources or all through the above-mentioned stream of sending at above-mentioned a plurality of processing gas tank the remaining processing gas that storage is made up of the kind different with afore mentioned rules kind and ratio and/or ratio part or all.
Moreover; In the 4th viewpoint of the present invention, a kind of storage medium of embodied on computer readable is provided, it is characterized in that; It is storing the control program of operation on computers, and above-mentioned control program makes the computer control processing unit according to the mode of implementing above-mentioned processing gas supply method when carrying out.
According to the present invention; Because processing gas temporarily is stored in the processing gas tank from handling the gas supply source via handling the gas communication parts; And, therefore can supply with the processing gas that makes the amount that becomes setting pressure in the container handling at short notice from handling in the gas tank supply container handling.Therefore, can shorten the processing time of handled object.
Description of drawings
Fig. 1 is the rough cross-sectional view of plasma-etching apparatus of an execution mode of gas treatment equipment involved in the present invention.
Fig. 2 be measure to handle the filling time of gas and handle gas when supplying with stabilization time employed plasma-etching apparatus rough cross-sectional view.
Fig. 3 is the figure that the mensuration result of the stabilization time when supplying with is handled the filling time of gas and handles gas in expression.
Fig. 4 is the rough cross-sectional view of plasma-etching apparatus of other execution mode of gas treatment equipment involved in the present invention.
Fig. 5 is the version that the supply source of processing gas supply mechanism set in plasma-etching apparatus connects stream.
Symbol description
1,1`: plasma-etching apparatus (gas treatment equipment)
2: chamber (container handling)
3,3`: handle gas supply mechanism
4: exhaust unit
5: plasma generates mechanism
41: blast pipe (exhaust flow path)
42: exhaust apparatus
30:He gas supply source (handling the gas supply source)
31:HCl gas supply source (handling the gas supply source)
32:SF
6Gas supply source (handling the gas supply source)
33,34: handle gas tank (tank)
35: handle the gas communication parts
36: the first processing gas flow paths
36a, 36b, 36c: supply source connects stream
36j, 36k, 36l: store and use stream
36m, 36n, 36o: supply with and use stream
37,37`, 38,38`: second handles gas flow path
37a, 37a`, 38a, 38a`: send into stream
37b, 38b: see stream off
39,39`: bypass flow path
90: process controller
91: user interface
92: storage part
93: cell controller (control part)
G: glass substrate (handled object)
Embodiment
Below, with reference to accompanying drawing, execution mode of the present invention is described.
Fig. 1 is the rough cross-sectional view as the plasma-etching apparatus of an execution mode of processing unit involved in the present invention.
This plasma Etaching device 1 constitutes the capacitive coupling type parallel flat plasma-etching apparatus that glass substrate (hereinafter to be referred as " the substrate ") G that the FPD as handled object is used carries out etch processes.Can enumerate out as FPD: LCD (LCD), electroluminescence (Electro Luminescence; EL) display, plasma display (PDP) etc.Plasma-etching apparatus 1 comprises: supply with to handle the processing gas supply mechanism 3 of gas as the chamber 2 of the container handling of accommodating substrate G, in chamber 2, to the exhaust unit 4 that carries out exhaust in the chamber 2 and generate and be processed the plasma generation mechanism 5 that gas supply mechanism 3 supplies to the plasma of the processing gas chamber 2 in.
On the sidewall of chamber 2, be formed with to be used to move into and take out of moving into of substrate G and take out of mouthfuls 21, and be provided with and open and close this and move into and take out of mouthfuls 21 gate valve 22.Take out of mouthfuls 21 when open when moving into, utilize transport mechanism not shown in the figures inside and outside chamber 2, to move into and take out of substrate G.
On the diapire and pedestal 20 of chamber 2, for example devices spaced apart ground is formed with their logical jack 23 of a plurality of perforations in the periphery position of pedestal 20.In each logical jack 23, according to being inserted with supporting substrates G and making the lifter pin 24 of its up-down with respect to the outstanding mode of submerging of the substrate-placing face of pedestal 20 from the below.Be formed with flange portion 25 in the bottom of each lifter pin 24; On each flange portion 25, be connected with an end (bottom) of the corrugated tube that can stretch 26 that is being provided with according to the mode that centers on lifter pin 24, another end (upper end) of this corrugated tube 26 is connected with the diapire of chamber 2.Like this, corrugated tube 26 stretches along with the up-down of lifter pin 24, and the gap of logical jack 23 with lifter pin 24 sealed.
At the top or the upper wall of chamber 2, according to pedestal 20 mode in opposite directions be provided with in chamber 2, spue by after the processing gas supplied with of the processing gas supply mechanism 3 stated, and have shower nozzle 27 as the function of upper electrode.Shower nozzle 27 is grounded, be formed with to make to handle gas in the gaseous diffusion space 28 of diffusion inside, and lower surface or with the opposite face of pedestal 20 on be formed with a plurality of holes 29 that spue of the processing gas after gaseous diffusion space 28 is by diffusion that is used for spuing.
Exhaust unit 4 comprises: as the blast pipe 41 of the exhaust flow path that is being connected with the for example diapire of chamber 2; Be connected and exhaust apparatus 42 with this blast pipe 41 through carrying out exhaust in 41 pairs of chambers 2 of blast pipe; And the connecting portion than itself and exhaust apparatus 42 that is set at blast pipe 41 also relies on the upstream side at the upper reaches, is used to adjust the pressure-regulating valve 43 of the pressure in the chamber 2.Exhaust apparatus 42 constitutes has turbomolecular pump equal vacuum pump, thus, and can be with the reduced atmosphere that is evacuated to regulation in the chamber 2.On the circumferencial direction of chamber 2, be provided with to devices spaced apart a plurality of blast pipes 41, be provided with a plurality of exhaust apparatus 42 and pressure-regulating valve 43 accordingly with each blast pipe 41.
Plasma generates mechanism 5 and comprises and being connected with the substrate 20a of pedestal 20, is used for the supply lines 51 of supply high frequency electric power; And the adaptation 52 and the high frequency electric source 53 that are being connected with this supply lines 51.Supply with the for example RF power of 13.56MHz from high frequency electric source 53 to pedestal 20, like this, pedestal 20 just has the function as lower electrode, and constitutes the pair of parallel plate electrodes jointly with shower nozzle 27.Pedestal 20 and shower nozzle 27 constitute the part that plasma generates mechanism 5.
Handling gas supply mechanism 3 comprises: be used in chamber 2, supplying with and handle gas, for example He gas, HCl gas and SF
6The processing gas supply source of gas, for example He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32; Be used for temporary transient storage or filling from He gas supply source 30, HCl gas supply source 31 and SF
6A plurality of for example 2 processing gas tank 33,34 of the processing gas of gas supply source 32; And handle gas communication parts 35, these processing gas communication parts comprise from He gas supply source 30, HCl gas supply source 31 and SF
6The processing gas of gas supply source 32 is supplied with in handling gas tank 33,34 and chamber 2, and will be stored in the processing gas of handling in the gas tank 33,34 and supply with the interior pipe arrangement of chamber 2 etc.Handling gas communication parts 35 comprises: connecting He gas supply source 30, HCl gas supply source 31 and SF
6First of gas supply source 32 and chamber 2 handled gas flow path 36; With according to 2 handle gas tank 33,34 corresponding modes respectively from first handle gas flow path 36 branches and with handle that gas tank 33,34 is being connected second handle gas flow path 37,38.
First handle gas flow path 36 a side in other words upstream portion have according to 3 handle gas supply source (He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32) corresponding mode and be branched off into 3 and handle the supply source that gas supply source is being connected with each and connect stream 36a, 36b, 36c, the other end or end of downstream side are according to being connected with the top of shower nozzle 27 with mode that gaseous diffusion space 28 is communicated with.Handle in the gas flow path 36 first; Connect at supply source and to be respectively arranged with mass flow controller 36d, 36e, 36f and valve 36g, 36h, the 36i that is used to adjust the flow of handling gas among stream 36a, 36b, the 36c, on a for example end that also relies on opposite side than its branching portion and another end, also be respectively arranged with valve 36s, 36t with the second processing gas flow path 37,38.
Second handles gas flow path 37,38 respectively from also rely on the downstream branch in downstream than supply source connection stream 36a, 36b, the 36c of the first processing gas flow path 36; And, connecting processing gas tank 33,34 at pars intermedia according to being connected with the top of shower nozzle 27 with mode that gaseous diffusion space 28 is communicated with.Like this, second handle gas flow path 37,38 and have respectively: be used for handle gas send into handle gas tank 33,34 send into stream 37a, 38a; And be used for from handle gas tank 33,34 see off handle gas see stream 37b, 38b off.Be respectively arranged with valve 37c, 38c and valve 37d, 38d among stream 37b, the 38b sending into stream 37a, 38a and see off, be respectively arranged with pressure gauge 33a, the 34a that is used to measure internal pressure handling on the gas tank 33,34.
For example be connected bypass flow path 39 such as pipe arrangement in 1 handling the part that gas communication parts 35, for example first handle in gas flow path 36 and a plurality of blast pipes 41, the processing gases of handling in the gas communication parts 35 just can be deflated unit 4 discharges through bypass flow path 39.Bypass flow path 39 constitutes, and is connected between the pressure-regulating valve 43 and exhaust apparatus 42 of blast pipe 41, through closing this pressure-regulating valve 43, then can prevent to flow in the chamber 2 through blast pipe 41 from the processing gas that bypass flow path 39 is discharged from.
Each component part of plasma-etching apparatus 1 is had 90 controls of process controller of microprocessor (computer).On this process controller 90; Connecting user interface 91, this user interface is that managing plasma Etaching device 1 carries out the keyboard of order input operation etc. and shows that visually the display etc. of the working order of plasma-etching apparatus 1 constitutes by process engineering person; And storage part 92, this storage portion stores being used under the control of process controller 90 and scheme that control program and treatment conditions data of being implemented in the processing that plasma-etching apparatus 1 implements etc. write down.As required, according to from storage part 92, transferring arbitrarily scheme from indication of user interface 91 etc. and it being moved, like this, just can under the control of process controller 90, be implemented in the processing in the plasma-etching apparatus 1 in process controller 90.Said scheme can be stored in the storage medium that for example computers such as CD-ROM, hard disk, flash memory can read, and perhaps the device from other for example transmits through special line at any time, to be used.
More specifically, each the valve 36g, 36h, 36i, 36s, 36t, 37c, 37d, 38c, 38d, the 39a that handle gas supply mechanism 3 constitute the cell controller 93 (control part) that is being connected with process controller 90 and control.As required, according to from indication of user interface 91 etc., process controller 90 is transferred arbitrarily scheme and is made it by 93 controls of cell controller from storage part 92.
In the plasma-etching apparatus 1 that adopts aforesaid way to constitute;, keeping under the situation of this state, at first remaining the specified vacuum degree in the chamber 2 through exhaust unit 4; Take out of under mouthfuls 21 states that are being opened making through gate valve 22 to move into; Take out of mouthfuls 21 by transport mechanism not shown in the figures from moving into of being opened and move into substrate G, each lifter pin 24 is risen, utilize each lifter pin 24 to receive substrate G and supporting substrates from transport mechanism.Transport mechanism from move into take out of mouthfuls 21 withdraw to chamber 2 after, utilize gate valve 22 to close to move into and take out of mouthfuls 21, and make each lifter pin 24 decline and make the substrate-placing face of its pedestal 20 that submerges, substrate G is carried puts on pedestal 20.
Then, in chamber 2, supply with processing gas through handling gas supply mechanism 3.The supply of the processing gas here is through opening valve 37d, emitting from He gas supply source 30, HCl gas supply source 31 and SF
6 Gas supply source 32 is pre-filled in He gas, HCl gas and the SF that handles in the gas tank 33
6Gas carries out.
Owing to be deflated unit 4 exhausts in the chamber 2, therefore, be filled in the processing gas of handling in the gas tank 33 if only supply with, then after after a while, the pressure in the chamber 2 will reduce.Therefore; When supply is filled in the processing gas of handling in the gas tank 33 or after the back to back supply; Open valve 36s, 36t, 36g, 36h, 36i, adjust from He gas supply source 30, HCl gas supply source 31 and SF through mass flow controller 36d, 36e, 36f
6The He gas of gas supply source 32, HCl gas and SF
6The flow of gas, and supply in the chamber 2, simultaneously, utilize pressure-control valve 43 with remaining on setting pressure, for example 23.3Pa (0.175Torr) in the chamber 2.Like this, just can promptly remain on the setting pressure in the chamber 2.In addition, handling gas communication parts 35 comprises and is connecting He gas supply source 30, HCl gas supply source 31 and SF
6First of gas supply source 32 and chamber 2 handled gas flow path 36; And from first handle gas flow path 36 branches and respectively with handle that gas tank 33,34 is being connected second handle gas flow path 37,38, so, do not make from He gas supply source 30, HCl gas supply source 31 and SF
6The helium of gas supply source 32, hydrogen chloride gas and SF
6Gas is handled gas flow path 36 via first and through as the processing gas tank 33,34 than large space, can be supplied at short notice in the chamber 2, like this, just can realize further rapidization that the pressure in the chamber 2 keeps.
Under this state, thereby the Electrostatic Absorption mechanism in being built in pedestal 20 applies direct voltage substrate G is adsorbed on the pedestal 20, simultaneously, utilize to be built in the temperature that the thermoregulative mechanism in the pedestal 20 is regulated substrate G.Apply RF power via adaptation 52 to pedestal 20 from high frequency electric source 53, between as the pedestal 20 of lower electrode and shower nozzle 27, generate high-frequency electric field, and make the processing gaseous plasmaization in the chamber 2 as upper electrode.Utilize the plasma of this processing gas that substrate G is implemented etch processes.
After substrate G enforcement etch processes, stop to apply RF power from high frequency electric source 53.Then, shut off valve 36g, 36h, 36i and stop to supply with from He gas supply source 30, HCl gas supply source 31 and SF
6The helium of gas supply source 32, hydrogen chloride gas and SF
6Gas simultaneously, utilizes in the exhaust unit 4 discharge chambers 2 and the processing gas in the first processing gas flow path 36 or the processing gas communication parts 35.Remove of the absorption of Electrostatic Absorption mechanism to substrate G; Afterwards, in chamber 2, supplying with processing gas, and with under the state that remains on setting pressure, for example 26.7Pa (0.2Torr) in the chamber 2; Apply RF power and make the processing gaseous plasmaization to pedestal 20, substrate G is implemented to remove electric treatment.The supply of the processing gas is here carried out in the following manner; Open valve 38d; Emit from He gas supply source 30 and be pre-filled in the helium of handling the gas tank 34, and, valve 36s, 36t, 36g opened; According to the mode that remains on setting pressure in the chamber 2, utilize mass flow controller 36d to adjust and see off from the flow of the helium of He gas supply source 30 and with it.Like this, can not only make the pressure moment in the chamber 2 remain on setting pressure or, can also promptly carry out the electric treatment that removes of substrate G near setting pressure.
In case carried out the electric treatment that removes of substrate G, and then discharged in the chambers 2 and first handle gas flow path 36 or handle the processing gas in the gas communication parts 35 through exhaust unit 4.Then, use open the moving into of gate valve 22 to take out of mouthfuls 21, and lifter pin 24 is risen, substrate G is left to the top from pedestal 20.Afterwards, the transport mechanism that does not show in the drawings from move into take out of mouthfuls 21 get in the chambers 2 after, lifter pin 24 is descended, G transfers on the transport mechanism with substrate.Afterwards, substrate G is taken out of mouthfuls 21 and takes out of to chamber 2 from moving into by transport mechanism.
Filling processing gas once more to processing gas tank 33,34 is when moving into of substrate G taken out of, to carry out.At first, open valve 37c, in handling gas tank 33, fill and handle gas.At this moment, flow into and handle in gas tank 34 and the chamber 2 in order to prevent to handle gas, in advance shut off valve 37d, 38c, 36s.Fill and handle after gases accomplish to handling gas tank 33, shut off valve 37c to remain in first and handles gas flow path 36 and send into the processing gas among stream 37a, the 38a and open valve 39a in order to discharge.At this moment, do not flow in the chamber 2, close the pressure-regulating valve 43 of the blast pipe 41 that is connecting bypass flow path 39 in advance in order to make processing gas.Discharge and handle after the gas completion,, handle gas to handling gas tank 34 fillings with same to handling gas tank 33 fillings, behind the end-of-fill, the discharge that remains in the first processing gas flow path 36 equally and send into the processing gas among stream 37a, the 38a.Moreover, also can carry out filling earlier to the processing gas of handling gas tank 34.
In this execution mode, because through handling gas communication parts 35, the temporary transient filling in handling gas tank 33,34 from handling gas supply source, for example He gas supply source 30, HCl gas supply source 31 and SF
6Processing gas, for example helium, hydrogen chloride gas and the SF of gas supply source 32
6Gas; With being filled in the processing that the processing gas of handling in the gas tank 33,34 is supplied with in the chamber 2 and comprised the plasma etching of substrate G; Therefore; Even the capacity of chamber 2 is bigger, also can supply with at short notice and make the processing gas that becomes setting pressure in this chamber 2, so just can realize reduction in processing time.
In addition, in this execution mode, the processing gas of being supplied with when filling plasma etch process and use and handle gas tank 33 is filled the processing gas of being supplied with after the plasma etch process and is used and handle gas tank 34, and they also can replace use.In addition, in this execution mode, make second to handle gas flow path 37,38 and handle gas flow path 36 branches and be provided with from first respectively, still, handle gas flow path 36 branches and be provided with from first under the state that also can converge in an end that makes them.Perhaps, also can make second to handle gas flow path 37,38 and be not connected with the top of shower nozzle 27, but with other part of chamber 2 for example sidewall is connected, so will not handle in the gas supply chamber 2 through shower nozzle 27.Moreover, in this execution mode, see off stream 37b, the 38b of the second processing gas flow path 37,38 are connected respectively with chamber 2, still, they also can be connected with the first processing gas flow path 36.In this execution mode; Used two to handle gas tank 33,34 for two kinds of processing using different processing gas continuously; But, under processing is merely a kind of situation, can only use one to handle gas tank; Under the situation of carrying out the processing etc. more than three kinds continuously, also can use the processing gas tank more than three.
Below; Use plasma-etching apparatus 1; Measured respectively with the pressure of regulation and in handling gas tank 33, filled the time (following note is done the filling time) of handling gas and will be filled in the processing gas handled in the gas tank 33 and supply with in the chamber 2, the time (following note do stabilization time) of pressure stability about setting pressure to the chamber 2 from the processing gas of handling gas supply source 30,31,32.As shown in Figure 2, the plasma-etching apparatus 1 has here used the second processing gas flow path 37,38 that will handle gas supply mechanism 3 to be deformed into simplified structure example afterwards.The second processing gas flow path 37,38 here is respectively that an end is connected from the first processing gas flow path, 36 branches, another end and processing gas tank 33,34, and is provided with valve 37z, 38z at pars intermedia.Therefore, second handling gas flow path 37,38 and have the regulate the flow of vital energy processing gas of body supply source 30,31,32 of being used for getting along alone in the future respectively concurrently and import the stream of handling gas tank 33,34 here; And be used for the processing gas of handling in the gas tank 33,34 is imported the stream in the chamber 2.
Set as the helium, hydrogen chloride gas and the SF that handle gas
6The flow-rate ratio of gas is 2: 1: 1, and total flow is 5slm, the capacity l of chamber 2
0Be 23101, handle the capacity l of gas tank 33
1Be 3l, the setting pressure P in the chamber 2
0For 23.3Pa (0.175Torr), respectively following situation is measured, be filled in the pressure P of handling the processing gas in the gas tank 33
1Situation (embodiment 1) for 26.7kPa (200Torr); 53.3kPa situation (400Torr) (embodiment 2); And the situation of 80.0kPa (600Torr) (embodiment 3).In addition, as comparative example, measured not use and handled gas tank 33 and the regulate the flow of vital energy processing gas of body supply source 30,31,32 of only getting along alone in the future supplies to the stabilization time under the situation in the chamber 2.Mensuration result is as shown in table 1.
Table 1
| Filling time (sec) | Stabilization time (sec) | |
| |
?2 | ?14 |
| |
?5 | ?10 |
| |
?10 | ?7 |
| Comparative example | ?15 |
As shown in table 1, can confirm, in embodiment 1,2,3, compare with comparative example and shorten stabilization time.Promptly, can confirm, through using plasma-etching apparatus 1, compare with not using the situation of the plasma-etching apparatus of the prior art of handling gas tank 33, then can shorten stabilization time.
In addition; Can confirm; Though it is short more to be filled in the low more filling time of pressure of handling the processing gas in the gas tank 33; Gao Ze is short more stabilization time more but be filled in the pressure of handling the processing gas in the gas tank 33, and pressure be situation and the pressure of 80.0kPa be the situation of 26.7kPa compare approximately become half the.This also is because if it is low to be filled in the pressure of handling the processing gas in the gas tank 33, then is supplied to processing gases in the chamber 2 and can handles gas flow path 37 through second and flow into the processing gas tank 33 from handling gas supply source 30,31,32.Therefore; In chamber 2, begin to supply with pressure in the processing gas communication parts of handling before and after the gas 35 and change and draw following result through measuring: the pressure in the processing gas communication parts 35 from processing gas tank 33 has just begun to supply with processing gas in chamber 2 after just from handling gas tank 33; Shown in the arrow part of Fig. 3 (a), be filled in the pressure P of handling the processing gas in the gas tank 33
1Under the situation for 26.7kPa, the pressure 29.9kPa (224Torr) in the processing gas communication parts 35 during approaching stablizing shown in the arrow part of Fig. 3 (b), is filled in the pressure P of handling the processing gas in the gas tank 33
1Not enough 29.9kPa for example be under the situation of 17.9kPa (135Torr), and the interior pressure of processing gas communication parts when stable 35 is little, shown in the arrow parts of Fig. 3 (c), is filled in the pressure P of the processing gas in the processing gas tank 33
1Than 29.9kPa is under the situation of 53.3kPa also greatly, for example, and the pressure in the processing gas communication parts 35 when stable is also big.In addition, be filled in the pressure P of handling the processing gas in the gas tank 33
1Under the situation for 17.9kPa; Compare with the situation of 26.7kPa, prolong 2 seconds more than stabilization time, promptly; Its result does, than do not use handle gas tank 33 and stabilization time when only to chamber 2 in, supplying with the processing gas from processing gas supply source 30,31,32 also long.Therefore; Handling gas flow path 37 (38) double as second sends into the stream of handling gas tank 33 (34) and is used for handling gas under the situation of the stream handling gas tank 33 (34) and see off handling gas for being used for; If make the pressure that is filled in the pressure ratio processing gas communication parts 35 of handling the processing gas in the gas tank 33 high; So, not only can prevent to handle gas and flow in the processing gas tank 33,34, and; Improve the pressure that is filled in the processing gas in the processing gas tank 33, then can shorten stabilization time more.
Below, other execution mode of article on plasma body Etaching device describes.
Fig. 4 is the rough cross-sectional view as the plasma-etching apparatus of other execution mode of gas treatment equipment involved in the present invention.
As shown in Figure 4; Plasma-etching apparatus 1` is the example after stream 37a, 38a and bypass flow path 39 are out of shape of sending into of second of the processing gas supply mechanism 3 in the plasma-etching apparatus 1 being handled gas flow path 37,38, for marking identical symbol and omit its explanation with plasma-etching apparatus 1 identical position.The stream 37a` (38a`) that sends into to handling gas tank 33 (34) that second of processing gas supply mechanism 3` among the plasma-etching apparatus 1` handles gas flow path 37` (38`) comprising: branch sends into stream 37e, 37f, 37g (38e, 38f, 38g); These branches send into stream, and to be an end or upstream-side-end continue branch from importing the stream 37i of branch, 37j, 37k, and these import branch's streams according to respectively from supply source connect stream 36a, 36b, the specific mass flow controller 36d of 36c, 36e, 36f also rely on the upper reaches upstream side branch mode and be provided with; And branch sends into another end of stream 37e, 37f, 37g (38e, 38f, 38g) or end of downstream side is collaborated each other and with handle the interflow that gas tank 33 (34) is being connected and send into stream 37h (38h).In importing the stream 37i of branch, 37j, 37k, be respectively arranged with mass flow controller 37l, 37m, 37n, send in branch and be respectively arranged with valve 37o, 37p, 37q, 38o, 38p, 38q among stream 37e, 37f, 37g, 38e, 38f, the 38g.
Upstream side branch also sends into stream 37h with the interflow respectively to the side of bypass flow path 39` among the processing gas supply mechanism 3` in other words, 38h is connected, and each branching portion is provided with valve 39b, 39c.
In the processing gas supply mechanism 3` that adopts this mode to constitute, from He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32 is handled gas communication parts 35 via first and in chamber 2, is supplied with helium, hydrogen chloride gas and SF
6Gas, meanwhile, can be from He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32 is handled gas flow path 37` (38`) via second and is filled helium, hydrogen chloride gas and SF to handling gas tank 33 (34)
6Gas; And, can come to adjust respectively to be supplied to flow, the flow of hydrogen chloride gas, the SF of the helium in the chamber 2 through each mass flow controller 36d, 36e, 36f, 37l, 37m, 37n and each valve 36g, 36h, 36i, 37o (38o), 37p (38p), 37q (38q)
6The flow of gas, be fed to flow, the flow of hydrogen chloride gas, the SF of the helium of handling gas tank 33 (34)
6The flow of gas.In addition; Make bypass flow path 39` branch and send into stream 37h with the interflow respectively, 38h is connected; Like this, then can discharge respectively and comprise that the interflow sends into the processing gas that second of stream 37h handles in the gas flow path 37` and send into the processing gas that second of stream 38h handles in the gas flow path 38` with comprising the interflow.Therefore; To be filled in the processing gas of forming by regulation kind and ratio handled in the gas tank 33 (34) in advance and from the processing gas supply chamber of forming by regulation kind and ratio 2 of handling gas supply source 30,31,32; Carry out certain processing; Because meanwhile; Can processing gas employed in next is handled, that is made up of the kind different with regulation kind and ratio and/or ratio be filled in the processing gas tank 34 (33), so can carry out the different processing more than three kinds such as employed processing gaseous species or ratio continuously.
Moreover; In this execution mode; Make branch send into stream 37e, 38e, 37f, 38f, 37g, 38g via importing the stream 37i of branch, 37j, 37k from supply source connection stream 36a, 36b, 36c branch; But, can be not do not connect stream 36a, 36b, 36c direct descendant from supply source through importing the stream 37i of branch, 37j, 37k yet.In this case, can send in branch mass flow controller is set respectively among stream 37e, 38e, 37f, 38f, 37g, the 38g.
The supply source that Fig. 5 is illustrated in processing gas supply mechanism 3 set in the plasma-etching apparatus 1 connects the variation of stream.
In order to fill processing gas from handling gas supply source 30,31,32 to handling gas tank 33,34 at short notice; The parts that preferred employing can be suitable for big flow are formed in supply source and connect set mass flow controller and valve among stream 36a, 36b, the 36c, thereby supply with processing gas according to big flow to handling gas tank 33,34.But; In order to improve the processing quality of substrate G; Must adjust from handling the flow that gas supply source 30,31,32 is supplied to the processing gas in the chamber 2 carefully; If connect the mass flow controller that setting can be suitable for big flow among stream 36a, 36b, the 36c at supply source, so just can't carry out delicate adjustment to flow, the processing quality of substrate G is descended.Therefore; As shown in Figure 5; Connect among stream 36a, 36b, the 36c at each supply source, make its branch into make from the processing gas of handling gas supply source 30,31,32 store or be filled in when handling in the gas tank 33,34 and the storage that makes its circulation with stream 36j, 36k, 36l; And get along alone in the future regulate the flow of vital energy make its circulation when the processing gas of body supply source 30,31,32 is supplied with in the chamber 2 supply with stream 36m, 36n, 36o; Be provided with; The mass flow controller 36p and the valve 36q that can be suitable for big flow is set respectively in storing with stream 36j, 36k, 36l; And, the mass flow controller 36r and the valve 36s that use of the for example low discharge that can finely tune of setting respectively in supplying with stream 36m, 36n, 36o.Through adopting this structure, can when in handling gas tank 33,34, filling processing gas, adjust the flow of the processing gas that is fed in the chamber 2 according to the short time carefully.
More than, preferred forms of the present invention has been described, still, the present invention is not limited to above-mentioned execution mode, and various changes can be arranged.In the above-described embodiment; Be illustrated being applied in the example that downward portion electrode applies in the capacitive coupling type parallel flat plasma-etching apparatus of RIE formula of RF power; But, be not limited thereto, also can be applied in other the plasma processing apparatus such as ashing, CVD film forming; And, also can be applied in handled objects such as substrate are housed in and carry out in the container handling in general gas device gas treatment, beyond the plasma processing apparatus.In addition; In the above-described embodiment, the example in the processing that is applied in the glass substrate that FPD uses is illustrated, but is not limited thereto; Can be applied in the general processing substrate such as semiconductor substrate, also can be applied in the processing of the handled object beyond the substrate.
Claims (14)
1. handle gas supply mechanism for one kind, it is characterized in that,
It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in said container handling, this processing gas supply mechanism comprises:
Be used in said container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient processing gas tank of storing from the processing gas of said processing gas supply source; With
To supply with said processing gas tank from the processing gas of said processing gas supply source, and the processing gas in the said processing gas tank will be supplied with the processing gas communication parts in the said container handling,
Handle gas and temporarily be stored in the said processing gas tank, and in said container handling, supply with from said processing gas tank from said processing gas supply source,
Said processing gas communication parts comprise: the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path,
Said processing gas supply mechanism is also supplied with in said container handling from said processing gas supply source and is handled gas,
Said processing gas tank is provided with a plurality of, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,
Each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream off from what said processing gas tank was seen off with handling gas.
2. a gas treatment equipment is characterized in that, comprising:
Accommodate the container handling of handled object;
In said container handling, supply with the processing gas supply mechanism of handling gas; And
To carrying out the exhaust unit of exhaust in the said container handling, and,
Under the state that handled object is housed in the said container handling, utilize said exhaust unit to carry out exhaust, utilize said processing gas supply mechanism to supply with simultaneously and handle gas, handled object is implemented predetermined processing,
Said processing gas supply mechanism comprises:
Be used in said container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient processing gas tank of storing from the processing gas of said processing gas supply source; With
To supply with said processing gas tank from the processing gas of said processing gas supply source, and the processing gas in the said processing gas tank will be supplied with the processing gas communication parts in the said container handling,
Handle gas and temporarily be stored in the said processing gas tank, and in said container handling, supply with from said processing gas tank from said processing gas supply source,
Said processing gas communication parts comprise: the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path,
Said processing gas supply mechanism is also supplied with in said container handling from said processing gas supply source and is handled gas,
Said processing gas tank is provided with a plurality of, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,
Each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream off from what said processing gas tank was seen off with handling gas.
3. gas treatment equipment according to claim 2 is characterized in that,
Comprise the control part of controlling said processing gas supply mechanism,
Said control part is controlled as follows: make and handle gas and supply with in said container handling through the said stream of seeing off from the part of said a plurality of processing gas tank, make simultaneously handle gas from said processing gas supply source through said send into stream be stored in the remaining part of said a plurality of processing gas tank or all.
4. gas treatment equipment according to claim 2 is characterized in that,
Said second handles gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,
Be provided with a plurality of said processing gas supply sources to supply with different multiple processing gas; And; Said first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream
Said second handle gas flow path said send into stream be from said first handle gas flow path said each supply source connect stream branch.
5. gas treatment equipment according to claim 4 is characterized in that,
Comprise the control part of controlling said processing gas supply mechanism,
Said control part is controlled as follows: the processing gas be made up of regulation kind and ratio is seen off after stream supplies with in said container handling through said from said processing gas tank; Make the processing gas formed by said regulation kind and ratio from the part of said a plurality of processing gas supply sources or all handle gas flow path and in said container handling, supply with through said first; Meanwhile; Make the processing gas of forming by the kind different and/or ratio, be stored in the said processing gas tank through the said stream of sending into from part or all of said a plurality of processing gas supply sources with said regulation kind and ratio.
6. gas treatment equipment according to claim 2 is characterized in that,
Be provided with a plurality of said processing gas tank, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,
Said each second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,
Be provided with a plurality of said processing gas supply sources to supply with different multiple processing gas; And; Said first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream
Said each second handle gas flow path said send into stream be from said first handle gas flow path said each supply source connect stream branch.
7. gas treatment equipment according to claim 6 is characterized in that,
Comprise the control part of controlling said processing gas supply mechanism,
Said control part is controlled as follows: the processing gas of being made up of regulation kind and ratio is supplied with in said container handling through the said stream of seeing off from the part of said a plurality of processing gas tank; And make the processing gas formed by said regulation kind and ratio from the part of said a plurality of processing gas supply sources or all handle gas flow path and in said container handling, supply with through said first; Meanwhile; Make the processing gas of forming by the kind different and/or ratio, send into stream to be stored in said a plurality of processing gas tank remaining part or all through said from part or all of said a plurality of processing gas supply sources with said regulation kind and ratio.
8. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,
Said first handles gas flow path has respectively: when making processing gas from said processing gas supply source be stored in the said processing gas tank and make the storage of its circulation use stream; And when will supplying with in the said container handling and make the supply of its circulation use stream from the processing gas of said processing gas supply source.
9. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,
Said exhaust unit has the exhaust flow path that a plurality of and said container handling is being connected; And through said exhaust flow path to carrying out the exhaust apparatus of exhaust in the said container handling,
On the part in said processing gas communication parts and the said a plurality of exhaust flow paths, be connected bypass flow path, the processing gas that constitutes in the said processing gas communication parts can be by said exhaust unit discharge through said bypass flow path,
The said exhaust flow path that is connecting said bypass flow path also leans on the upstream side at the upper reaches to open and close freely at the connecting portion than itself and said bypass flow path.
10. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,
In said container handling, also possess plasma and generate mechanism, it generates the plasma of the processing gas of being supplied with by said processing gas supply mechanism,
Said predetermined process is being to use the Cement Composite Treated by Plasma of the plasma of handling gas.
11. handle the gas supply method for one kind, it is characterized in that,
It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in said container handling, prepare:
Be used in said container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient a plurality of processing gas tank of storing from the processing gas of said processing gas supply source; With
To supply with said processing gas tank from the processing gas of said processing gas supply source; And the processing gas in the said processing gas tank supplied with the processing gas communication parts in the said container handling; To handle gas temporarily is stored in the said processing gas tank from said processing gas supply source; And in said container handling, supply with from said processing gas tank
In advance by the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path and constitute said processing gas communication parts,
Prepare a plurality of said second accordingly with the quantity of said processing gas tank and handle gas flow path, each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,
Also in said container handling, supply with and handle gas from said processing gas supply source.
12. processing gas supply method according to claim 11 is characterized in that,
A plurality of said processing gas tank are set, and corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,
Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitutes said each second processing gas flow path,
In said container handling, supply with processing gas from the part of said a plurality of processing gas tank through the said stream of seeing off; Simultaneously, from said processing gas supply source through the said stream storage at body of regulating the flow of vital energy or all of sending in the remaining part of said a plurality of processing gas tank.
13. processing gas supply method according to claim 11 is characterized in that,
Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitute said second and handle gas flow path,
A plurality of said processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with said first constitutes to have and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream
With said said each supply source connection stream branch that sends into stream from the said first processing gas flow path of the said second processing gas flow path,
From said processing gas tank through said see stream off and in said container handling, supply with the processing gas of forming by regulation kind and ratio after; From said a plurality of processing gas supply sources a part or all through said first the processing gas flow path in said container handling, supply with the processing gas of forming by said regulation kind and ratio; Meanwhile, from the part of said a plurality of processing gas supply sources or all said processing gas tank, store the processing gas of forming by the kind different and/or ratio with said regulation kind and ratio through the said stream of sending into.
14. processing gas supply method according to claim 11 is characterized in that,
A plurality of said processing gas tank are set, and corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,
Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitutes said each second processing gas flow path,
A plurality of said processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with said first constitutes to have and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream
With said said each supply source connection stream branch that sends into stream from the said first processing gas flow path of the said second processing gas flow path,
In said container handling, supply with the processing gas of forming by regulation kind and ratio from the part of said a plurality of processing gas tank through the said stream of seeing off; And from said a plurality of processing gas supply sources a part or all through said first the processing gas flow path in said container handling, supply with the processing gas of forming by said regulation kind and ratio; Meanwhile, from the part of said a plurality of processing gas supply sources or all through the said stream of sending at said a plurality of processing gas tank the remaining processing gas that storage is made up of the kind different with said regulation kind and ratio and/or ratio part or all.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-270823 | 2006-10-02 | ||
| JP2006270823A JP5235293B2 (en) | 2006-10-02 | 2006-10-02 | Process gas supply mechanism, process gas supply method, and gas processing apparatus |
| JP2006270823 | 2006-10-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101159228A CN101159228A (en) | 2008-04-09 |
| CN101159228B true CN101159228B (en) | 2012-09-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200710154446XA Active CN101159228B (en) | 2006-10-02 | 2007-09-12 | Processing gas supplying mechanism, supplying method and gas processing unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5235293B2 (en) |
| KR (1) | KR100915740B1 (en) |
| CN (1) | CN101159228B (en) |
| TW (1) | TWI416618B (en) |
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| JP2009283844A (en) * | 2008-05-26 | 2009-12-03 | Japan Steel Works Ltd:The | Semiconductor processing device |
| EP2354628A1 (en) * | 2008-12-03 | 2011-08-10 | Taiyo Nippon Sanso Corporation | Method for supplying gas |
| JP5310409B2 (en) * | 2009-09-04 | 2013-10-09 | 東京エレクトロン株式会社 | Plasma etching method |
| JP2012033150A (en) | 2010-06-30 | 2012-02-16 | Toshiba Corp | Mass flow controller, mass flow controller system, substrate processing apparatus and gas flow rate adjustment method |
| US9348339B2 (en) * | 2010-09-29 | 2016-05-24 | Mks Instruments, Inc. | Method and apparatus for multiple-channel pulse gas delivery system |
| US8997686B2 (en) | 2010-09-29 | 2015-04-07 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
| US10126760B2 (en) | 2011-02-25 | 2018-11-13 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
| US10353408B2 (en) | 2011-02-25 | 2019-07-16 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
| US10031531B2 (en) | 2011-02-25 | 2018-07-24 | Mks Instruments, Inc. | System for and method of multiple channel fast pulse gas delivery |
| CN103205719B (en) * | 2012-01-17 | 2015-09-09 | 上海北玻镀膜技术工业有限公司 | Gas passage module and apply its gas distributing device |
| JP6107327B2 (en) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | Film forming apparatus, gas supply apparatus, and film forming method |
| JP6027490B2 (en) * | 2013-05-13 | 2016-11-16 | 東京エレクトロン株式会社 | Gas supply method and plasma processing apparatus |
| CN103322411B (en) * | 2013-07-16 | 2015-07-22 | 兖矿集团有限公司 | Chemical system stoppage protective device |
| CN104715995A (en) * | 2013-12-17 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Gas supply device and plasma reaction unit thereof |
| JP6410622B2 (en) * | 2014-03-11 | 2018-10-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and film forming method |
| KR101764959B1 (en) * | 2014-03-21 | 2017-08-03 | 주식회사 엘지화학 | Apparatus for High Speed Atomic Layer Deposition and Deposition Method Using the Same |
| JP6318027B2 (en) * | 2014-06-27 | 2018-04-25 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP6541406B2 (en) * | 2015-04-21 | 2019-07-10 | 株式会社日立ハイテクノロジーズ | Plasma processing system |
| JP6678489B2 (en) * | 2016-03-28 | 2020-04-08 | 東京エレクトロン株式会社 | Substrate processing equipment |
| KR102514043B1 (en) * | 2016-07-18 | 2023-03-24 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
| JP6665760B2 (en) * | 2016-11-16 | 2020-03-13 | 日本電気硝子株式会社 | Glass substrate manufacturing apparatus and manufacturing method |
| KR102489515B1 (en) * | 2018-12-03 | 2023-01-17 | 주식회사 원익아이피에스 | Apparatus for supplying material source and gas supply control method |
| KR102593445B1 (en) * | 2018-12-03 | 2023-10-24 | 주식회사 원익아이피에스 | Apparatus for supplying material source and gas supply control method |
| SG10202101459XA (en) * | 2020-02-25 | 2021-09-29 | Kc Co Ltd | Gas mixing supply device, mixing system, and gas mixing supply method |
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| CN1816898A (en) * | 2003-07-04 | 2006-08-09 | 株式会社荏原制作所 | Substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101159228A (en) | 2008-04-09 |
| KR20080031117A (en) | 2008-04-08 |
| TW200832540A (en) | 2008-08-01 |
| JP5235293B2 (en) | 2013-07-10 |
| TWI416618B (en) | 2013-11-21 |
| JP2008091625A (en) | 2008-04-17 |
| KR100915740B1 (en) | 2009-09-04 |
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