CN101176189B - 低介电常数隐晶层及纳米结构 - Google Patents
低介电常数隐晶层及纳米结构 Download PDFInfo
- Publication number
- CN101176189B CN101176189B CN2006800170631A CN200680017063A CN101176189B CN 101176189 B CN101176189 B CN 101176189B CN 2006800170631 A CN2006800170631 A CN 2006800170631A CN 200680017063 A CN200680017063 A CN 200680017063A CN 101176189 B CN101176189 B CN 101176189B
- Authority
- CN
- China
- Prior art keywords
- cryptocrystal
- wafer
- layers
- dielectric constant
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002086 nanomaterial Substances 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000002070 nanowire Substances 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 241000220317 Rosa Species 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000011010 flushing procedure Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 34
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 238000005516 engineering process Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- GYQWAOSGJGFWAE-UHFFFAOYSA-N azane tetrafluorosilane Chemical compound N.[Si](F)(F)(F)F GYQWAOSGJGFWAE-UHFFFAOYSA-N 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 3
- 229910008284 Si—F Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002356 laser light scattering Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007701 flash-distillation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明提供一种用于在现有技术半导体晶片上制造应用特性低介电常数(低k)隐晶层和用于由隐晶制造有机化的纳米结构的方法,并涉及到光学和电子器件,其可由这些材料获得。在此公开的结果表明使用化学汽相处理(CVP)的单晶基质的结构和化学成分的改性导致高质量隐晶层,所述隐晶层是均质的且与半导体晶片形成光滑界面。通过该方法,对于介电隐晶层形成可实现1μm/小时那样高的生长速度。本发明还提供一种方法,用于通过将隐晶转变成有机化的系统制造微米和纳米线。通过该方法,能制造尺寸从几纳米到1000纳米且长度达50微米的纳米线。隐晶、纳米线和有机化的结构可用在未来的互连中作为级间和金属间电介质,用在制造超高密度存储单元中,用在信息安全中作为密钥产生器,用在制造光电部件和传感器中。
Description
技术领域
本发明涉及一种低介电常数隐晶,其可与下一代集成电路和器件结合使用。这些隐晶通过化学汽相处理(CVP)方法[S.Kalem和O.Yavuz,OPTICS EXPRESS 6,7(2000)]来生长,其包括将硅表面暴露于酸性混合物蒸汽。隐晶表示一种如此精细地成粒状以致在光学显微镜下不能分辨出不同的颗粒的材料。具有这种微小晶体的以这种方式设置的物质的状态称作隐晶。这种类型的晶体能显示出特别的介电特性,其可用于多种领域中。
背景技术
关于上述光学特性介电氟化X铵隐晶在文献中没有报道。
当氟化铵NH4F与晶片表面上的Si反应时显示在硅晶片上形成了氟化硅铵(ASiF)材料[M.Niwano,K.Kurita,Y.Takeda和N.Miyamoto,Applied Physics Letters 62,1003(1993)]。
如在另一文献中说明的,在等离子体辅助半导体清洗和沉积处理期间在真空室的壁上和真空排气线中发现了氟化硅铵[S.Munley,I.McNaught,D.Mrotek,和C.Y.Lin,Semiconductor International,10/1,(2001)]。
也已经表明,使用HF/HNO3能从多孔硅获得氟化硅铵的发光粉末[M.Saadoun,B.Bessais,N.Mliki,M.Ferid,H/Ezzaouia和R.Bennaceur,Applied Surface Science 210,240(2003)]。
相似地,[H.Ogawa,T.Arai,M.Yanagisawa,T.Ichiki和Y.Horiike,Jpn.J.Applied Physics 41,5349(2002)]已经示出,当剩余的天然(natural)氧化物与晶片表面上的热铵(NH3)和氟化氮(NF3)反应时,氟化硅铵形成于硅晶片上。
而且,报道了当HF和NH3气体于真空下在SiO2上反应时形成了氟化硅铵[P.D.Agnello,IBM J.of Research and Development 46,Number 2/3,2002)]。
在上述文献中没有应用特性隐晶结构。而且,在这些文献中,获得的是一种无意的、无规则的、杂乱且被产物污染的氟化硅铵。
文献中没有关于氟化X铵的微米和纳米线的报道。
关于氟化X铵隐晶的介电常数能在很大范围内被调节且其可用作绝缘体的事实没有报道。
微电子线路和纳电子线路是本发明最重要的应用领域。根据International Road Map for Semiconductors(ITRS)[C.Case,Solid StateTechnology,Jan.,47(2004)][P.Zeitzoff,R.W.Murto,H.R.Huff,Solid StateTechnology,71(2002)],半导体工业需要一种低介电常数(k)的金属间绝缘体,其介电常数大大低于k=3.0。工业上期待低k解决方案。因此,开发一种与下一代集成电路(IC)制造相兼容的低k电介质是非常重要的。另一方面,继续努力寻找一种用于栅绝缘的高k电介质。
根据历史上的摩尔定律[G.E.Moore,Electronics 38,114(1965)][G.E.Moore,IEDM Technical Digest,Washington DC,11(1975)],在CMOS技术中继续按比例缩小。需要多级金属化以适应多个有源元件的信号集成。这些金属互连中的电阻和寄生电容是限制下一代系统中IC性能的重要因素。这引起工业从铝/SiO2转移向铜/低k结构。虽然铜降低了线电阻,但是低k电介质降低了金属线之间的寄生电容。
为了克服晶体管尺寸的按比例缩小中的困难,每单位面积的电容要保持恒定。因此,需要一种高k值电介质。这些电介质可以是氧化物和硅酸盐如Al2O3、ZrO2、HFO2。C.J.Parker,G.Lucovsky和J.R.Hauser,IEEE Electron.Device Lett.(1998);Y.Wu和G.Lucovsky,IEEEElectron.Device Lett(1998);H.Yang和G.Lucovsky,IEDM Digest,(1999)已经提出了使用这些材料的解决方案。然而,对于克服关于经济成本和界面缺陷数量存在非常困难的挑战。本发明的隐晶技术能提供该领域中的潜在解决方案。例如,保持原生(native)栅极氧化物的优点,可以使用隐晶形成高k电介质。
集成电路中的金属线通过介电绝缘体相互电绝缘。随着IC尺寸变得更小,金属线之间的距离降低,由此导致增加的电容。这导致RC延迟,功率损失,电容感应信号或串扰。
使用具有低于SiO2的介电常数的介电常数的聚合物作为互连绝缘体。但是,聚合物不坚固的事实是重要的缺点。
掺杂碳的氧化物是低k电介质的解决方案。可以获得具有小于3.0的介电常数的氧化物。然而,关于使用寿命其表现出很大的缺点。
IC制造中通过降低有源电路元件的尺寸获得的性能特性在互连和封装元件中可能会损失。在这种情况下,不是晶体管的速度而是互连的RC延迟变得重要。而且,随着降低尺寸,需要更深的金属线,由此使得金属间电容比级间电容更重要。为了克服这些困难,需要极好的低k电介质和新的制造方法。当前的低k电介质由氧化物和聚合物构成。隐晶可以是潜在的解决方案。由此,能通过避免相邻电路之间的串扰实现高性能IC。
一种解决方案是使用气隙降低电容的方法[B.Shieh等人,IEEEElectron Device Letters,19,no.1,p.16-18(1998)][D.L.Wollesen,Lowcapacitance interconnection,美国专利号No:5,900,668,1999年5月4日提交]。在这些解决方案中,SiO2已经用作级间和金属间电介质。美国专利号Nos.US 5,470,802,US 5,494,858、US 5,504,042和US 5,523,615专利涉及通过气隙降低电容的可能性。但是在这些方法中,粗糙的(harsh)化学物质应当用于形成气隙。隐晶技术在制造气隙中可提供更简单、无损伤、低成本的解决方案。
发明内容
本发明涉及ASiF隐晶,其介电值能通过几种方法调节并且能在Si和Si基晶片上合成。通过扩散,ASiF隐晶的介电常数能从其最小值1.50调节到较高得多的值(所需的)。由此,隐晶能具有其它特性如铁电体性和光发射。
本发明对于低成本和高性能的低k技术提供一种重要的替换方案。因为其是从潜在的集成电路晶片获得的并具有低于2.00的介电常数。该值比2007年及之后的ITRS所预测的更小。
本发明在Si CMOS技术和GaAs技术中、在增加异质结双极型晶体管(HBT)特性、高密度信息存储和信息安全、微电子封装、光电部件制造、IC系统冷却、技术集成和传感器制造方面具有重要的应用。
附图说明
以下的图涉及到隐晶特性、隐晶层制造方法和能使用隐晶层的器件。
图1,隐晶制造装置,其由聚四氟乙烯制成,由包含液体的腔室、样品夹具(holder)、蒸汽排气通道和加热器构成。
图2,其中设置了晶片的样本夹具的详细绘图。
图3,在极化光学显微镜下获得的用上述装置生长的隐晶层的表面图像。
图4,利用扫描电子显微镜(SEM)在3.000放大倍数下获得的隐晶层的截面显微照片。隐晶结构的细节与图3相比能更好地看到。该隐晶层的厚度是21μm。
图5,用7.500的放大倍数以SEM看到的隐晶和晶片之间的界面。清楚地示出了表面质量和隐晶从晶片的衍生。存在相对光滑的界面且隐晶层很好地贴附到晶片。
图6,X射线衍射分析示出了层是(NH4)2SiF6,且晶体属于具有Fm3m空间群的(4/m-32/m)等距六八面体(isometric hexoctahedral)系[W.L.Roberts,G.R.Rapp和T.J.Cambell,Enc.of Minerals,2ndEd.,Kluwer Academic Publishers,Dordrecht,1990]。
图7,示出了在退火之后表面处的变化。尽管在退火期间没有保护该表面,但是在200℃之后仍有一部分隐晶层没有分解且仍粘着到该表面。而且,在该表面上形成大晶体。
图8,可以选择性地写到晶片表面上来形成光刻结构而不使用光刻。该图示出了这种试验的结果。
图9,隐晶的另一个重要特征在于其能被转变成微米和纳米线。可以形成直的线且尺寸在从几纳米到1000nm的范围内,如图中所示。通过该方法,可以制造长度高达100μm的直的线。
图10,X射线衍射分析的结果已经借助通过存在(NH4)2SiF6分组的振动模式的FTIR分析而被证实。该分析表示所观察的在480cm-1、725cm-1、1433cm-1和3327cm-1的振动模式属于N-H和Si-F结合(bonding)。
图11,该图示出了在基极-集电极和源极-集电极之间的电容可以怎样使用隐晶方法被降低。
图12,用于产生随机数的隐晶芯片。作为窗口的隐晶层正好位于激光器或者LED腔前面。
图13,通过隐晶层的激光散射和物理单向函数(one-way function)的产生。
以下给出图中的数字和其相应部分:
1.晶片或衬底
2.气体排气通道
3.聚四氟乙烯容器
4.蒸汽室
5.化学混合物
6.温度计
7.Ph计
8.聚四氟乙烯块
9.液体提取阀
10.氮闪蒸阀(flashing valve)
11.工艺室口
12.ASiF隐晶
13.晶片和隐晶界面
14.(111)主衍射峰
15.单ASiF晶体
16.选择性形成于Si上的隐晶点
17.ASiF微米和纳米线
18.N-H振动模式
19.Si-O振动模式
20.Si-F振动模式
21.变形模式
22.晶体管栅极金属
23.晶体管源极金属
24.源极
25.漏极金属
26.漏极
27.栅极氧化物层(SiO2)
28.HBT集电极
29.隐晶HBT源区
30.隐晶HBT漏区
31.异质双极型晶体管(HBT)基区
32.VECSEL有源区
33.保护层
34.绝缘体
35.顶部布拉格反射器
36.底部布拉格反射器
37.隐晶透明窗口
38.通过隐晶的He-Ne激光散射
具体实施方式
已经研究出一种用于在硅(Si)和Si基晶片上合成氟化硅铵(ASiF)的方法。在该方法中,我们使用我们已经研究出的汽相生长技术[S.Kalem和O.Yavuz,OPTICS EXPRESS 6,7(2000)]。通过该方法,我们通过使氢氟酸(HF)和硝酸(HNO3)的蒸汽在晶片表面上反应来生长隐晶层。具有白粒状颜色的隐晶层在晶片上以1μm/小时的生长速度合成。
该技术的优点是:i)不需要电接触,ii)可以在表面上选择性写入,iii)层是同质的,iv)能控制厚度,v)可以形成扩散阻挡,vi)与其它常规技术相比节省成本。
当常规化学制剂的混合物蒸汽在晶片上反应时,隐晶氟化硅铵层(NH4)2SiF6(ASiF)形成于现有技术晶片上。该方法称作化学汽相处理(CVP)并包括以下步骤:
a)准备聚四氟乙烯生长室和超声清洗工艺;
b)制备包含比率为(4-10)∶(1-8)的HF、HNO3的化学制剂混合物和25-50%的氢氟酸(HF)以及55-75%的硝酸(HNO3);
c)用氮气冲洗该混合物并以一片晶片共腾(priming)该混合物10秒;
d)用待处理的晶片完全封闭室口;
e)确保反应产物通过排气通道从腔室中排空;
f)控制Ph和温度;
g)通过在晶片上HF和HNO3种类之间的遵循以下反应式的硅居间耦合反应,隐晶层形成于晶片上:
X+6HF+2HNO3→(NH4)2XF6+3O2
其中X可以是Si、Ge或C。
h)晶片以1μm的速度被转变成隐晶层;
i)可以退火隐晶层并且能增强其强度和密度;
j)在氮气氛下在50℃以上将隐晶转变为纳米结构且特别是微米和纳米线。
这里是在隐晶层制造中使用的晶片特性:
1.在5-10欧姆-cm之间的电阻率
2.p型、硼掺杂、(100)和(111)取向的Si
3.n型、磷掺杂、(100)和(111)取向的Si
4.在硅SiO2/Si上的硅原生氧化物(热氧化物)
5.化学计量的硅上Si3N4(Si/Si3N4)
6.Si1-XGeX,x<0.3(Si上Si1-XGeX)
隐晶制造装置由衬底(1)、用于产物(2)反应的气体排气通道、聚四氟乙烯容器(3)、蒸汽处理室(4)、化学制剂混合物(5)、Ph计(7)、化学制剂提取门(9)、加热器(8)和温度控制器(6)、室口和样品夹具(11)以及氮闪蒸(10)。
隐晶层由不可辨别的颗粒(12)形成,如通过光学极性显微镜和甚至通过扫描电子显微镜(SEM)表明的。此外,其具有光滑界面(13)并且很好地集成到晶片上,如SEM界面研究所表明的。
X射线衍射分析表明隐晶优先在<111>方向(14)上生长。衍射峰及其相对强度在表1中总结。
表1,总结在ASiF隐晶中观察到的衍射峰的X射线衍射数据。其中,teta、d和I/I1分别是衍射角度、平面之间的距离和标准化的衍射强度。
峰编号: | 2Teta(度) | d(埃=10-8cm) | I/I1 |
1 | 18.3401 | 4.83355 | 100 |
2 | 21.2009 | 4.18734 | 19 |
3 | 30.1452 | 2.96221 | 15 |
4 | 35.4952 | 2.52703 | 7 |
5 | 37.1360 | 2.41906 | 39 |
6 | 43.1362 | 2.09545 | 43 |
7 | 57.0333 | 1.61348 | 22 |
8 | 62.6247 | 1.48219 | 9 |
9 | 65.8394 | 1.41739 | 7 |
具有白色的隐晶(12)以规则薄层形式形成于晶片(1)上。退火试验表明ASiF停留在高达约150℃的表面上。其在该温度以上分解。
根据退火温度,ASiF的体晶(15)形成于该表面上。这些晶体的尺寸可以高达15μm×30μm。
隐晶可选择性地实现为晶片上的点(16)。
制造尺寸从几纳米直到一微米且长度高达50μm的纳米线(17)。而且,制造多种纳米结构且特别是纳米支路。
ASiF隐晶的室温光学特性显示出振动峰,如表2中所总结的。频率与ASiF中N-H(18)、Si-O(19)和(ve)Si-F(20)的各种结合结构的振动相关。Si-O振动与界面处氧化物层的存在有关。
表2,ASiF隐晶的FTIR数据总结,其中VS:非常坚固,S:坚固,M:中间,W:弱,VW:非常弱。
FTIR分析表明ASiF在3μm(18)、7μm(18)、13.6μm(20)和20.8μm(21)具有强吸收凹槽,且由此其可用在光学应用中。
在本发明的另一应用中,隐晶层位于(异质双极型晶体管,HBT)晶体管中的源极(23)-集电极(28)和漏极(25)-集电极(28)之间,以降低电容并由此提高HBT的高频性能。上述电容在III-V族化合物半导体基(GaAs/AlGaAs bazl1)HBT[M.Mochizuki,T.Nakamura,T.Tanoue和H.Masuda,Solid State Electronics 38,1619(1995)]和SiGe基HBT[和H.Dambkes,Solid State Electronics 38,1595(1995)]中起到非常重要的作用。在这种器件中,隐晶层位于基区(31)的两侧和源区(29)和漏区(30)的下方。在该结构中,在形成晶体管结构之后,基极的两侧已经使用上述方法被转变成隐晶。
通过增加对超高密度和高速应用的需要,对新的高性能信息存储系统有增加的兴趣[H.Coufal和G.W.Burr,International Trends in Optics,2002][美国专利号No.6,846,434]。在本发明的另一应用中,我们提供了解决高性能信息存储的替换解决方案。使用隐晶,可以在电子晶片上获得高密度存储单元(20)。在该应用中,已经可以在硅基晶片上通过形成隐晶单元(16)选择性写入。隐晶在相对低的温度下可能具有相位变化(16)的事实提供了擦除和改写的可能性。由此,低温下的快速相位变化特征能实现快速写入应用。而且,通过ASiF隐晶的8.5nm单位单元尺寸,可获得数量级为Tb/cm2的信息存储密度。在该领域中由隐晶技术引入的新颖性在于:i)可以在微电子晶片上写入而不进行光刻,ii)以Tb/cm2的范围提供高密度信息存储,iii)高速擦除和改写。
在信息安全应用中,隐晶用在垂直腔激光器或者LED中[A.C.Tpper,H.D.Foreman,A.Garnache,K.G.Wilcox,S.H.Hoogland,J.Phys,D:Appl.Phys.37,R75(2004)],正好在有源区(32)和顶部布拉格反射器(35)上方形成隐晶窗口(37)。由此,激光器或LED表面已经被转变成透明窗口。在此,ASiF必须通过帽盖层(33)保护。利用这种激光器/LED芯片能产生物理单向函数。He-Ne激光器自ASiF(38)的散射示出了可行性。该散射表明存在随机结构。这证明在信息安全中隐晶可用于产生安全密钥。与CMOS应用[A.Fort,F.Cortigiani,S.Rocchi和V.Vignoli,Analog Integrated Circuits and Signal Processing34,97(2003)]和使用无源元件的其它光学应用[R.Pappu,B.Recht,J.Taylor和N.Gershenfeld,Science 297,2026(2002)]相比,该方法更加节省成本且能够更好地集成到IC。
本发明能用于将两个晶片结合在一起。该方法包括通过CVP和在高温在H2O、氮气和氢气(H2)下按压两个晶片在两个晶片的表面上形成隐晶层。
Claims (11)
1.一种晶片结合方法,包括以下步骤:
a)冲洗HF和HNO3的化学制剂混合物,并在聚四氟乙烯容器(3)中形成化学制剂蒸汽,其中[HF]/[HNO3]体积比率被调整为(4-10)∶(1-8),
b)以一片硅晶片共腾混合物10秒,
c)用待处理的晶片覆盖反应室的室口,
d)确保通过排气通道排空反应产物和反应室中的过压,
e)调整温度在10℃-50℃之间(6),这导致隐晶生长速度为1μm/h,
f)以Si或Ge或C居间反应使HF和HNO3、H2O的蒸汽在晶片X表面上反应,由此在晶片表面上形成具有平滑界面的同质隐晶层,其中X为Si、Ge或C,
g)在H2O、氮气或氢气下在高温下按压晶片表面。
2.如权利要求1所述的方法,其中隐晶层在50℃-200℃的热处理下在氮气氛中被转变成微米和纳米线。
3.如权利要求1所述的方法,其中所使用的酸是电子级的且按重量为25%-50%氢氟酸和55%-75%硝酸。
4.如权利要求1所述的方法,其中所述晶片是Si1-xGex。
5.如权利要求4所述的方法,其中Ge的成分比率x在0.01和0.50之间。
6.如权利要求1所述的方法,其中隐晶是无机物且其介电常数是可调的。
7.如权利要求1所述的方法,其中隐晶的介电常数能通过蒸发和扩散调整。
8.如权利要求1所述的方法,其中隐晶的介电常数低于2.0且根据应用,所述介电常数能通过元素结合被设置在所需值。
9.如权利要求1所述的方法,其中所述隐晶通过扩散能够具有磁性和光学发射特性。
10.如权利要求1所述的方法,进一步包括在形成隐晶层之后在隐晶层上在50-400℃之间执行退火。
11.如权利要求10所述的方法,其中退火通过热加热和辐射实现。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TR2005/00923A TR200500923A2 (tr) | 2005-03-16 | 2005-03-16 | İleri Teknoloji Uygulamaları için Küçük Dielektrik Sabitli K |
TR2005/00923 | 2005-03-16 | ||
PCT/IB2006/050406 WO2006097858A2 (en) | 2005-03-16 | 2006-02-08 | Low-dielectric constant cryptocrystal layers and nanostructures |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101176189A CN101176189A (zh) | 2008-05-07 |
CN101176189B true CN101176189B (zh) | 2011-05-11 |
Family
ID=36992107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800170631A Active CN101176189B (zh) | 2005-03-16 | 2006-02-08 | 低介电常数隐晶层及纳米结构 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20080191218A1 (zh) |
EP (1) | EP1878043B1 (zh) |
JP (1) | JP5112289B2 (zh) |
KR (1) | KR20070112410A (zh) |
CN (1) | CN101176189B (zh) |
CA (1) | CA2602365C (zh) |
EA (1) | EA013649B1 (zh) |
TR (1) | TR200500923A2 (zh) |
WO (1) | WO2006097858A2 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007197302A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
US20130009128A1 (en) * | 2010-03-31 | 2013-01-10 | Gilberto Ribeiro | Nanoscale switching device |
CN102184873B (zh) * | 2011-04-21 | 2012-10-10 | 北京科技大学 | 一种快速制备金刚石-碳化硅电子封装材料的方法 |
JP6132290B2 (ja) | 2012-04-30 | 2017-05-24 | トゥビタク | シリコン光源およびそれを応用したデバイス |
DE102017109423A1 (de) * | 2017-05-03 | 2018-11-08 | Osram Gmbh | Verschlüsselung von Baken |
US11605760B2 (en) * | 2018-05-21 | 2023-03-14 | Intel Corporation | Micro light-emitting diode displays having nanophosphors |
US11605668B2 (en) * | 2018-05-21 | 2023-03-14 | Intel Corporation | Pixel architectures for low power micro light-emitting diode displays |
CN109813760A (zh) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | 一种氧化锌纳米线气体传感器及其制备方法 |
KR102581119B1 (ko) | 2020-06-16 | 2023-09-20 | 고려대학교 세종산학협력단 | 인화게르마늄 나노시트 및 이의 제조방법 |
KR102602180B1 (ko) | 2020-08-07 | 2023-11-13 | 고려대학교 세종산학협력단 | 비소화규소 나노시트 및 이의 제조방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1955821A (en) * | 1929-06-14 | 1934-04-24 | Ac Spark Plug Co | Ceramic process |
JPH0810672B2 (ja) * | 1987-07-03 | 1996-01-31 | 富士通株式会社 | 平板の接着方法 |
JP2766992B2 (ja) * | 1989-07-14 | 1998-06-18 | 富士通株式会社 | 半導体装置の製造方法 |
JPH06340416A (ja) * | 1990-08-29 | 1994-12-13 | Rhone Poulenc Chim | シリカ及び場合によっては四価元素の酸化物を基材とするゼオライトの製造法 |
JPH07283381A (ja) * | 1994-04-08 | 1995-10-27 | Canon Inc | 貼合わせ半導体基体の製造方法 |
US5470802A (en) * | 1994-05-20 | 1995-11-28 | Texas Instruments Incorporated | Method of making a semiconductor device using a low dielectric constant material |
JP3753805B2 (ja) * | 1996-09-19 | 2006-03-08 | 株式会社東芝 | 半導体試料の分解装置および試料分解方法 |
JPH10158010A (ja) * | 1996-11-26 | 1998-06-16 | Matsushita Electric Works Ltd | 酸化珪素被膜の製造方法 |
US6468927B1 (en) * | 2000-05-19 | 2002-10-22 | Applied Materials, Inc. | Method of depositing a nitrogen-doped FSG layer |
JP2002039927A (ja) * | 2000-07-19 | 2002-02-06 | Toshiba Ceramics Co Ltd | シリコンウェーハ表層の部分分析方法 |
JP2004123484A (ja) * | 2002-10-04 | 2004-04-22 | Crystal System:Kk | 金属酸化物膜およびその用途 |
JP4310415B2 (ja) * | 2003-04-28 | 2009-08-12 | 財団法人新産業創造研究機構 | 液相析出法によるマイクロパターニング方法 |
US7279369B2 (en) * | 2003-08-21 | 2007-10-09 | Intel Corporation | Germanium on insulator fabrication via epitaxial germanium bonding |
-
2005
- 2005-03-16 TR TR2005/00923A patent/TR200500923A2/xx unknown
-
2006
- 2006-02-08 JP JP2008501454A patent/JP5112289B2/ja active Active
- 2006-02-08 US US11/908,778 patent/US20080191218A1/en not_active Abandoned
- 2006-02-08 KR KR1020077023517A patent/KR20070112410A/ko not_active Application Discontinuation
- 2006-02-08 WO PCT/IB2006/050406 patent/WO2006097858A2/en active Application Filing
- 2006-02-08 EP EP06710851.4A patent/EP1878043B1/en active Active
- 2006-02-08 CA CA2602365A patent/CA2602365C/en active Active
- 2006-02-08 EA EA200701725A patent/EA013649B1/ru unknown
- 2006-02-08 CN CN2006800170631A patent/CN101176189B/zh active Active
Non-Patent Citations (11)
Title |
---|
JP昭64-10614A 1989.01.13 |
M.Saadoun et al..Vapour-etching-based porous silicon: a new approach.Thin Solid Films405 1-2.2002,30-31. |
M.Saadoun et al..Vapour-etching-based porous silicon: a new approach.Thin Solid Films405 1-2.2002,30-31. * |
R.W.Fathauer et al..Visible luminescence from silicon wafers subjuctedto stainetches.Applied Physics Letters60 8.1992,995-997. |
R.W.Fathauer et al..Visible luminescence from silicon wafers subjuctedto stainetches.Applied Physics Letters60 8.1992,995-997. * |
S.Kalem et al..Possibility of fabricating light-emitting porous silicon from gasphase etchants.Optics Express6 1.2000,7-11. |
S.Kalem et al..Possibility of fabricating light-emitting porous silicon from gasphase etchants.Optics Express6 1.2000,7-11. * |
S.Kalem.possible low-k solution and other potential applications.European Semiconductor26 7.2004,31-34. |
S.Kalem.possible low-k solution and other potential applications.European Semiconductor26 7.2004,31-34. * |
S.Kalem.Synthesis of ammonium silicon fluoride cryptocrystals onsilicon by dry etching.Applied Surface Science236 1-4.2004,336-341. |
S.Kalem.Synthesis of ammonium silicon fluoride cryptocrystals onsilicon by dry etching.Applied Surface Science236 1-4.2004,336-341. * |
Also Published As
Publication number | Publication date |
---|---|
CA2602365A1 (en) | 2006-09-21 |
US20080191218A1 (en) | 2008-08-14 |
WO2006097858A2 (en) | 2006-09-21 |
CA2602365C (en) | 2017-05-09 |
EP1878043A2 (en) | 2008-01-16 |
JP5112289B2 (ja) | 2013-01-09 |
EA200701725A1 (ru) | 2008-08-29 |
EA013649B1 (ru) | 2010-06-30 |
KR20070112410A (ko) | 2007-11-23 |
JP2008537844A (ja) | 2008-09-25 |
CN101176189A (zh) | 2008-05-07 |
TR200500923A2 (tr) | 2010-02-22 |
WO2006097858A3 (en) | 2007-07-19 |
EP1878043B1 (en) | 2021-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101176189B (zh) | 低介电常数隐晶层及纳米结构 | |
JP2008537844A5 (zh) | ||
US8617669B1 (en) | Laser formation of graphene | |
US7618880B1 (en) | Apparatus and method for transformation of substrate | |
Saadoun et al. | Formation of luminescent (NH4) 2SiF6 phase from vapour etching-based porous silicon | |
Arduca et al. | Doping of silicon nanocrystals | |
CN1879201A (zh) | 半导体器件中的透明非晶碳结构 | |
CN107217242B (zh) | 一种电子器件介电衬底的表面修饰方法 | |
US20230188213A1 (en) | Composition And Method For Making Picocrystalline Artificial Borane Atoms | |
CN102723265B (zh) | 一种硅片的铝掺杂方法 | |
Ruzyllo | Semiconductor Glossary: A Resource For Semiconductor Community | |
Vostrikov et al. | ZnO nanoparticles formation by reactions of bulk Zn with H2O and CO2 at sub-and supercritical conditions: II. Morphology and properties of nanoparticles | |
WO2022166087A1 (zh) | 清洗工艺和半导体工艺方法 | |
JP3341387B2 (ja) | 微細構造材料の製造方法並びにその製造装置、および微細構造を有する発光素子 | |
JP7070871B2 (ja) | ピコ結晶人工ボラン原子を製造するための組成物及び方法 | |
Wang et al. | Removal of fine particle using SAPS technology and functional water | |
Sun et al. | Unexpected phosphorus doping routine of planar silicon nanowires for integrating CMOS logics | |
Shanygin et al. | Relaxation-induced self-organization of a silicon crystal surface under microwave plasma micromachining | |
CN1160797C (zh) | 点接触平面栅型单电子晶体管及其制备方法(二) | |
Fahlman | Semiconductors | |
Kim et al. | The interfacial layer formation of the Al2O3/Si structures grown by low‐pressure metalorganic chemical vapor deposition | |
Roozeboom et al. | Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 | |
von Haeften | Fluorescent silicon clusters and nanoparticles | |
Yang | Fabrication and device characterization of wafer-scale two-dimensional semiconductors by pulsed laser deposition | |
CN1275327C (zh) | 基于库仑阻塞原理设计的单电子三值存储器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |