CN101207141A - Image sensor and manufacturing method thereof - Google Patents
Image sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN101207141A CN101207141A CNA2006101717144A CN200610171714A CN101207141A CN 101207141 A CN101207141 A CN 101207141A CN A2006101717144 A CNA2006101717144 A CN A2006101717144A CN 200610171714 A CN200610171714 A CN 200610171714A CN 101207141 A CN101207141 A CN 101207141A
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- layer
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- imageing sensor
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- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 24
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
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- VEMKTZHHVJILDY-UHFFFAOYSA-N resmethrin Chemical compound CC1(C)C(C=C(C)C)C1C(=O)OCC1=COC(CC=2C=CC=CC=2)=C1 VEMKTZHHVJILDY-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- 238000003306 harvesting Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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Abstract
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Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610171714A CN100578800C (en) | 2006-12-19 | 2006-12-19 | Image sensor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610171714A CN100578800C (en) | 2006-12-19 | 2006-12-19 | Image sensor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
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CN101207141A true CN101207141A (en) | 2008-06-25 |
CN100578800C CN100578800C (en) | 2010-01-06 |
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CN200610171714A Active CN100578800C (en) | 2006-12-19 | 2006-12-19 | Image sensor and manufacturing method thereof |
Country Status (1)
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102404514A (en) * | 2010-09-15 | 2012-04-04 | 索尼公司 | Solid imaging device and electronic apparatus |
CN102005414B (en) * | 2009-08-28 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | Complementary metal oxide semiconductor (CMOS) image sensor pixel, manufacturing method and image capture equipment |
CN103280451A (en) * | 2013-06-04 | 2013-09-04 | 上海华力微电子有限公司 | Method for improving performance of CMOS image sensor |
CN104637962A (en) * | 2013-11-07 | 2015-05-20 | Nlt科技股份有限公司 | Image sensor and manufacturing method thereof |
CN104814753A (en) * | 2014-01-31 | 2015-08-05 | 西门子公司 | Direct converversion X-ray detector, CT system and method |
-
2006
- 2006-12-19 CN CN200610171714A patent/CN100578800C/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005414B (en) * | 2009-08-28 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | Complementary metal oxide semiconductor (CMOS) image sensor pixel, manufacturing method and image capture equipment |
CN102404514A (en) * | 2010-09-15 | 2012-04-04 | 索尼公司 | Solid imaging device and electronic apparatus |
CN103280451A (en) * | 2013-06-04 | 2013-09-04 | 上海华力微电子有限公司 | Method for improving performance of CMOS image sensor |
CN104637962A (en) * | 2013-11-07 | 2015-05-20 | Nlt科技股份有限公司 | Image sensor and manufacturing method thereof |
CN104637962B (en) * | 2013-11-07 | 2018-11-09 | Nlt科技股份有限公司 | Imaging sensor and its manufacturing method |
CN104814753A (en) * | 2014-01-31 | 2015-08-05 | 西门子公司 | Direct converversion X-ray detector, CT system and method |
US9750467B2 (en) | 2014-01-31 | 2017-09-05 | Siemens Aktiengesellschaft | Direct conversion X-ray detector, CT system, and associated procedure |
CN104814753B (en) * | 2014-01-31 | 2018-08-03 | 西门子公司 | Direct converting x-rays radiation detector, computed tomography imaging system and method |
Also Published As
Publication number | Publication date |
---|---|
CN100578800C (en) | 2010-01-06 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: POWERCHIP TECHNOLOGY CO., LTD. Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |
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TR01 | Transfer of patent right |