CN101211959A - 相变化存储器元件及其制造方法 - Google Patents
相变化存储器元件及其制造方法 Download PDFInfo
- Publication number
- CN101211959A CN101211959A CNA2007101472090A CN200710147209A CN101211959A CN 101211959 A CN101211959 A CN 101211959A CN A2007101472090 A CNA2007101472090 A CN A2007101472090A CN 200710147209 A CN200710147209 A CN 200710147209A CN 101211959 A CN101211959 A CN 101211959A
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- China
- Prior art keywords
- phase
- material layer
- change material
- memory device
- hard mask
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000012782 phase change material Substances 0.000 claims abstract description 66
- 238000005530 etching Methods 0.000 claims description 29
- 238000003475 lamination Methods 0.000 claims description 26
- 239000000725 suspension Substances 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 57
- 239000011241 protective layer Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/617,977 | 2006-12-29 | ||
US11/617,977 US7521372B2 (en) | 2006-12-29 | 2006-12-29 | Method of fabrication of phase-change memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101211959A true CN101211959A (zh) | 2008-07-02 |
CN101211959B CN101211959B (zh) | 2010-12-08 |
Family
ID=39582524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101472090A Active CN101211959B (zh) | 2006-12-29 | 2007-08-30 | 相变化存储器元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7521372B2 (zh) |
CN (1) | CN101211959B (zh) |
TW (1) | TWI381487B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8426838B2 (en) | 2008-01-25 | 2013-04-23 | Higgs Opl. Capital Llc | Phase-change memory |
US8604457B2 (en) | 2008-11-12 | 2013-12-10 | Higgs Opl. Capital Llc | Phase-change memory element |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7795605B2 (en) * | 2007-06-29 | 2010-09-14 | International Business Machines Corporation | Phase change material based temperature sensor |
US8362821B2 (en) * | 2007-11-22 | 2013-01-29 | Nxp B.V. | Charge carrier stream generating electronic device and method |
US8138574B2 (en) * | 2008-05-16 | 2012-03-20 | International Business Machines Corporation | PCM with poly-emitter BJT access devices |
US9958926B2 (en) * | 2011-12-13 | 2018-05-01 | Intel Corporation | Method and system for providing instant responses to sleep state transitions with non-volatile random access memory |
US11723213B2 (en) | 2018-09-28 | 2023-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) |
US11195840B2 (en) | 2018-09-28 | 2021-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) |
JP2023127115A (ja) * | 2022-03-01 | 2023-09-13 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789758A (en) | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
KR100504700B1 (ko) | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
US7034332B2 (en) | 2004-01-27 | 2006-04-25 | Hewlett-Packard Development Company, L.P. | Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making |
TWI254443B (en) * | 2004-10-08 | 2006-05-01 | Ind Tech Res Inst | Multilevel phase-change memory, manufacture method and status transferring method thereof |
KR100738070B1 (ko) * | 2004-11-06 | 2007-07-12 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 트랜지스터를 지닌 비휘발성메모리 소자 |
US7381343B2 (en) * | 2005-07-08 | 2008-06-03 | International Business Machines Corporation | Hard mask structure for patterning of materials |
TWI264087B (en) * | 2005-12-21 | 2006-10-11 | Ind Tech Res Inst | Phase change memory cell and fabricating method thereof |
-
2006
- 2006-12-29 US US11/617,977 patent/US7521372B2/en active Active
-
2007
- 2007-07-09 TW TW096124887A patent/TWI381487B/zh active
- 2007-08-30 CN CN2007101472090A patent/CN101211959B/zh active Active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
US8426838B2 (en) | 2008-01-25 | 2013-04-23 | Higgs Opl. Capital Llc | Phase-change memory |
US8716099B2 (en) | 2008-01-25 | 2014-05-06 | Higgs Opl. Capital Llc | Phase-change memory |
US9087985B2 (en) | 2008-01-25 | 2015-07-21 | Higgs Opl.Capital Llc | Phase-change memory |
US8604457B2 (en) | 2008-11-12 | 2013-12-10 | Higgs Opl. Capital Llc | Phase-change memory element |
US8884260B2 (en) | 2008-11-12 | 2014-11-11 | Higgs Opl. Capital Llc | Phase change memory element |
US9245924B2 (en) | 2008-11-12 | 2016-01-26 | Higgs Opl. Capital Llc | Phase change memory element |
US9735352B2 (en) | 2008-11-12 | 2017-08-15 | Gula Consulting Limited Liability Company | Phase change memory element |
US10573807B2 (en) | 2008-11-12 | 2020-02-25 | Gula Consulting Limited Liability Company | Phase change memory element |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
Also Published As
Publication number | Publication date |
---|---|
US20080157050A1 (en) | 2008-07-03 |
CN101211959B (zh) | 2010-12-08 |
TWI381487B (zh) | 2013-01-01 |
TW200828506A (en) | 2008-07-01 |
US7521372B2 (en) | 2009-04-21 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: POWERCHIP SEMICONDUCTOR CORP. NAN YA TECHNOLOGY CORP. PROMOS TECHNOLOGIES INC. WINBOND ELECTRONICS CORPORATION |
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COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: HSINCHU COUNTY, TAIWAN PROVINCE |
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Effective date of registration: 20100702 Address after: Hsinchu County of Taiwan Applicant after: Industrial Technology Research Institute Address before: Hsinchu County, Taiwan, China Applicant before: Industrial Technology Research Institute Co-applicant before: Powerchip Semiconductor Corp. Co-applicant before: Nanya Sci. & Tech. Co., Ltd. Co-applicant before: Maode Science and Technology Co., Ltd. Co-applicant before: Huabang Electronics Co., Ltd. |
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C14 | Grant of patent or utility model | ||
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Owner name: SIGGS EDUCATION CAPITALS CO., LTD. Free format text: FORMER OWNER: FINANCIAL GROUP LEGAL PERSON INDUSTRIAL TECHNOLOGY INST. Effective date: 20120223 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20120223 Address after: Delaware Patentee after: Ind Tech Res Inst Address before: Hsinchu County, Taiwan, China Patentee before: Industrial Technology Research Institute |