CN101221928B - 用于在场效应晶体管的鳍之上形成双重全硅化栅极的方法 - Google Patents
用于在场效应晶体管的鳍之上形成双重全硅化栅极的方法 Download PDFInfo
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- CN101221928B CN101221928B CN2008100020480A CN200810002048A CN101221928B CN 101221928 B CN101221928 B CN 101221928B CN 2008100020480 A CN2008100020480 A CN 2008100020480A CN 200810002048 A CN200810002048 A CN 200810002048A CN 101221928 B CN101221928 B CN 101221928B
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- fin
- semiconductor
- layer
- silicon nitride
- polysilicon
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 230000009977 dual effect Effects 0.000 title claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 229920005591 polysilicon Polymers 0.000 claims abstract description 62
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 239000012212 insulator Substances 0.000 claims description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- 150000002815 nickel Chemical class 0.000 claims 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/622,586 | 2007-01-12 | ||
US11/622,586 US7691690B2 (en) | 2007-01-12 | 2007-01-12 | Methods for forming dual fully silicided gates over fins of FinFet devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101221928A CN101221928A (zh) | 2008-07-16 |
CN101221928B true CN101221928B (zh) | 2010-06-09 |
Family
ID=39618097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100020480A Expired - Fee Related CN101221928B (zh) | 2007-01-12 | 2008-01-09 | 用于在场效应晶体管的鳍之上形成双重全硅化栅极的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7691690B2 (zh) |
JP (1) | JP5187940B2 (zh) |
CN (1) | CN101221928B (zh) |
TW (1) | TW200830431A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013006989A1 (zh) * | 2011-07-08 | 2013-01-17 | 中国科学院微电子研究所 | 一种全硅化金属栅体硅多栅鳍型场效应晶体管的制备方法 |
Families Citing this family (30)
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US7691690B2 (en) * | 2007-01-12 | 2010-04-06 | International Business Machines Corporation | Methods for forming dual fully silicided gates over fins of FinFet devices |
WO2010025083A1 (en) * | 2008-08-28 | 2010-03-04 | Memc Electronic Materials, Inc. | Bulk silicon wafer product useful in the manufacture of three dimensional multigate mosfets |
US8343877B2 (en) * | 2009-11-09 | 2013-01-01 | International Business Machines Corporation | Angle ion implant to re-shape sidewall image transfer patterns |
US8310013B2 (en) * | 2010-02-11 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a FinFET device |
CN102315265B (zh) * | 2010-06-30 | 2013-12-04 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN102130014B (zh) * | 2011-01-05 | 2012-11-07 | 北京大学深圳研究生院 | 一种FinFET晶体管的制作方法 |
US8753964B2 (en) * | 2011-01-27 | 2014-06-17 | International Business Machines Corporation | FinFET structure having fully silicided fin |
KR20120125017A (ko) * | 2011-05-06 | 2012-11-14 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
CN103000686B (zh) * | 2011-09-08 | 2016-02-24 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US8729611B2 (en) | 2011-09-08 | 2014-05-20 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device having a plurality of fins with different heights and method for manufacturing the same |
CN103065963B (zh) * | 2011-10-19 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 鳍式晶体管及其形成方法 |
US8643120B2 (en) | 2012-01-06 | 2014-02-04 | International Business Machines Corporation | FinFET with fully silicided gate |
US9287179B2 (en) * | 2012-01-19 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite dummy gate with conformal polysilicon layer for FinFET device |
CN102683418B (zh) * | 2012-05-22 | 2014-11-26 | 清华大学 | 一种finfet动态随机存储器单元及其制备方法 |
CN103779227B (zh) * | 2012-10-23 | 2016-08-31 | 中国科学院微电子研究所 | 鳍型场效应晶体管的制造方法 |
CN102969234B (zh) * | 2012-11-01 | 2017-04-19 | 上海集成电路研发中心有限公司 | 一种金属栅电极的制造方法 |
US9142633B2 (en) * | 2012-12-13 | 2015-09-22 | GlobalFoundries, Inc. | Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures |
KR102049774B1 (ko) | 2013-01-24 | 2019-11-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US8716156B1 (en) * | 2013-02-01 | 2014-05-06 | Globalfoundries Inc. | Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process |
US9305930B2 (en) * | 2013-12-11 | 2016-04-05 | Globalfoundries Inc. | Finfet crosspoint flash memory |
CN103794512B (zh) * | 2014-01-15 | 2017-02-15 | 上海新储集成电路有限公司 | 双Finfet晶体管及其制备方法 |
US9472573B2 (en) * | 2014-12-30 | 2016-10-18 | International Business Machines Corporation | Silicon-germanium fin formation |
US9627410B2 (en) | 2015-05-21 | 2017-04-18 | International Business Machines Corporation | Metallized junction FinFET structures |
KR102350007B1 (ko) | 2015-08-20 | 2022-01-10 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
CN109585377B (zh) * | 2017-09-29 | 2021-02-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US11287340B2 (en) | 2018-07-02 | 2022-03-29 | Flexiv Ltd. | Multi-axis force and torque sensor and robot having the same |
FR3100377A1 (fr) | 2019-08-30 | 2021-03-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Prise de contact sur du germanium |
EP3716314A1 (fr) * | 2019-03-29 | 2020-09-30 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Prise de contact sur du germanium |
FR3094560B1 (fr) * | 2019-03-29 | 2021-04-16 | Commissariat Energie Atomique | Prise de contact sur du germanium |
US20200411527A1 (en) * | 2019-06-27 | 2020-12-31 | Nanya Technology Corporation | Memory structure |
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CN1507057A (zh) * | 2002-12-06 | 2004-06-23 | ̨������·����ɷ�����˾ | 多重栅极结构及其制造方法 |
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US6855990B2 (en) * | 2002-11-26 | 2005-02-15 | Taiwan Semiconductor Manufacturing Co., Ltd | Strained-channel multiple-gate transistor |
KR100471189B1 (ko) * | 2003-02-19 | 2005-03-10 | 삼성전자주식회사 | 수직채널을 갖는 전계효과 트랜지스터 및 그 제조방법 |
US6844238B2 (en) * | 2003-03-26 | 2005-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd | Multiple-gate transistors with improved gate control |
US6764884B1 (en) * | 2003-04-03 | 2004-07-20 | Advanced Micro Devices, Inc. | Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device |
JP2004356472A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US6951783B2 (en) * | 2003-10-28 | 2005-10-04 | Freescale Semiconductor, Inc. | Confined spacers for double gate transistor semiconductor fabrication process |
US6867460B1 (en) * | 2003-11-05 | 2005-03-15 | International Business Machines Corporation | FinFET SRAM cell with chevron FinFET logic |
US6831310B1 (en) * | 2003-11-10 | 2004-12-14 | Freescale Semiconductor, Inc. | Integrated circuit having multiple memory types and method of formation |
US7098502B2 (en) * | 2003-11-10 | 2006-08-29 | Freescale Semiconductor, Inc. | Transistor having three electrically isolated electrodes and method of formation |
US7091566B2 (en) * | 2003-11-20 | 2006-08-15 | International Business Machines Corp. | Dual gate FinFet |
JP3964885B2 (ja) * | 2004-05-19 | 2007-08-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2006012898A (ja) * | 2004-06-22 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US6970372B1 (en) * | 2004-06-29 | 2005-11-29 | International Business Machines Corporation | Dual gated finfet gain cell |
US7105934B2 (en) * | 2004-08-30 | 2006-09-12 | International Business Machines Corporation | FinFET with low gate capacitance and low extrinsic resistance |
US7087952B2 (en) * | 2004-11-01 | 2006-08-08 | International Business Machines Corporation | Dual function FinFET, finmemory and method of manufacture |
US7393733B2 (en) * | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US7470951B2 (en) * | 2005-01-31 | 2008-12-30 | Freescale Semiconductor, Inc. | Hybrid-FET and its application as SRAM |
JP2006245167A (ja) * | 2005-03-02 | 2006-09-14 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5015446B2 (ja) * | 2005-05-16 | 2012-08-29 | アイメック | 二重の完全ケイ化ゲートを形成する方法と前記方法によって得られたデバイス |
US7564081B2 (en) * | 2005-11-30 | 2009-07-21 | International Business Machines Corporation | finFET structure with multiply stressed gate electrode |
US20080111185A1 (en) * | 2006-11-13 | 2008-05-15 | International Business Machines Corporation | Asymmetric multi-gated transistor and method for forming |
US7691690B2 (en) * | 2007-01-12 | 2010-04-06 | International Business Machines Corporation | Methods for forming dual fully silicided gates over fins of FinFet devices |
US7485520B2 (en) * | 2007-07-05 | 2009-02-03 | International Business Machines Corporation | Method of manufacturing a body-contacted finfet |
US20090057780A1 (en) * | 2007-08-27 | 2009-03-05 | International Business Machines Corporation | Finfet structure including multiple semiconductor fin channel heights |
-
2007
- 2007-01-12 US US11/622,586 patent/US7691690B2/en active Active
-
2008
- 2008-01-08 JP JP2008001329A patent/JP5187940B2/ja not_active Expired - Fee Related
- 2008-01-09 TW TW097100791A patent/TW200830431A/zh unknown
- 2008-01-09 CN CN2008100020480A patent/CN101221928B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507057A (zh) * | 2002-12-06 | 2004-06-23 | ̨������·����ɷ�����˾ | 多重栅极结构及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013006989A1 (zh) * | 2011-07-08 | 2013-01-17 | 中国科学院微电子研究所 | 一种全硅化金属栅体硅多栅鳍型场效应晶体管的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5187940B2 (ja) | 2013-04-24 |
US7691690B2 (en) | 2010-04-06 |
TW200830431A (en) | 2008-07-16 |
JP2008172237A (ja) | 2008-07-24 |
CN101221928A (zh) | 2008-07-16 |
US20080171408A1 (en) | 2008-07-17 |
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