CN101226972B - LED device and preparing process thereof - Google Patents
LED device and preparing process thereof Download PDFInfo
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- CN101226972B CN101226972B CN2007100017816A CN200710001781A CN101226972B CN 101226972 B CN101226972 B CN 101226972B CN 2007100017816 A CN2007100017816 A CN 2007100017816A CN 200710001781 A CN200710001781 A CN 200710001781A CN 101226972 B CN101226972 B CN 101226972B
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- electrode pair
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- insulating barrier
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Abstract
The invention relates to a luminescence diode device, which comprises a first electrode pair, a second electrode pair, a first insulating layer, a second insulating layer, a reflective layer, a first insulating body, a second insulating body, a first junction layer and a second junction layer, wherein the first electrode pair is formed on a first surface of a thermal conducting substrate, the second electrode pair is formed on a luminescence diode element and is arranged corresponding to the first electrode pair, the first insulating layer is formed between the first electrode pair, and the second insulating layer is formed between the second electrode pair. The reflective layer is formed on the second insulating layer, the first insulating body is covered on a part of the first electrode pair and a part of the first insulating layer, the second insulating body is arranged corresponding to the first insulating body and is connected with the first insulating body, and the second insulating body is covered on a part of the second electrode pair, a part of the second insulating layer and a part of the reflective layer. The first junction layer is formed on the first electrode pair and the first insulating layer, the second junction layer is formed on the second electrode pair and the reflective layer, and the second junction layer is arranged corresponding to the first junction layer and is electrically connected with the first junction layer.
Description
Technical field
The present invention is about a kind of light-emitting device, particularly about a kind of light-emitting diode assembly.
Background technology
(light-emitting diode, LED) device is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode assembly belongs to chemiluminescence, have advantages such as power consumption is low, component life is long, reaction speed is fast, add the little element of making minimum or array easily of volume, therefore in recent years, along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic sign or the automobile-used indicator light of liquid crystal indicator.
But because the photoelectric cell material that light-emitting diode adopted of light-emitting diode assembly is a gallium nitride at present, and its photoelectric conversion efficiency still can't improve effectively, it is its luminous intensity deficiency, therefore still be not enough to replace the light source of normal lighting equipment, be one of emphasis at present to be improved so how to improve the luminous intensity of light-emitting diode assembly.
Hold, one of method that increases luminous intensity is the light-emitting area that increases light-emitting diode, and its external quantum efficiency is promoted.Yet, when increasing the light-emitting diode light-emitting area, must increase its drive current simultaneously, when but light-emitting diode assembly is operated under the environment of big electric current, to cause electric current to scatter inhomogeneous and cause current blockade (current crowding) phenomenon, so can produce too much heat energy.
Generally speaking, the light-emitting area that increase light-emitting diode adopts upside-down mounting chip (Flip-chip) light-emitting diode assembly to reach.Please refer to a kind of light-emitting diode assembly 1 shown in Figure 1, known and comprise light-emitting diode 11 and bearing substrate 12.Light-emitting diode 11 forms n N-type semiconductor N doped layer 112, luminescent layer (active layer) 113 and p N-type semiconductor N doped layer 114 in regular turn on sapphire (sapphire) substrate 111.Wherein, Bu Fen n N-type semiconductor N doped layer 112 is exposed to luminescent layer 113 and p N-type semiconductor N doped layer 114.In this, because light-emitting diode assembly 1 is upside-down mounting chip light-emitting diode assembly, promptly sapphire substrate 111 is a structure up.
In addition, light-emitting diode assembly 1 also comprises the first reflecting electrode E01, the second reflecting electrode E02 and insulating barrier 115.The first reflecting electrode E01 is formed at p N-type semiconductor N doped layer 114; The second reflecting electrode E02 is formed at the n N-type semiconductor N doped layer 112 that is exposed to luminescent layer 113 and p N-type semiconductor N doped layer 114; 115 of insulating barriers are arranged between the first reflecting electrode E01 and the second reflecting electrode E02, and are electrical to isolate it.
The heat energy of above-mentioned light-emitting diode assembly 1 for light-emitting diode 11 being produced, conduct on the bearing substrate 12 with heat sinking function via conductive projection B01, therefore the first reflecting electrode E01, the second reflecting electrode E02 and conductive projection B01 must provide the larger area heat dissipation path.But when light-emitting diode 11 engaged with bearing substrate 12, excessive conductive projection B01 will cause the first reflecting electrode E01 and the second reflecting electrode E02 to produce the doubt of short circuit.Right if conductive projection B01 is too small, will cause the thermal energy conduction poor effect again.
Help because of in this, how a kind of larger area heat dissipation path that has is provided, can prevent the light-emitting diode assembly and the manufacture method thereof of inter-electrode short-circuit simultaneously effectively, real one of the current important topic that belongs to.
Summary of the invention
Because above-mentioned problem, purpose of the present invention is for providing a kind of light-emitting diode assembly and manufacture method thereof with good heat radiating path.
Edge is, for reaching above-mentioned purpose, comprise heat-conducting substrate, light-emitting diode, first electrode pair, second electrode pair, first insulating barrier, second insulating barrier, reflector, first insulator, second insulator, first knitting layer and second knitting layer according to a kind of light-emitting diode assembly of the present invention.Heat-conducting substrate has first surface; First electrode pair is formed on the first surface of heat-conducting substrate; Second electrode pair is formed on the light-emitting diode, and relative with first electrode pair and establish; First insulating barrier is formed between first electrode pair; Second insulating barrier is formed between second electrode pair; The reflector is formed on second insulating barrier, after passing through second insulating barrier from the light that is sent between second electrode pair, can pass through this light of this reflective layer reflects; First insulating barrier of first electrode pair of the first insulator cover part and part; Second insulator is relative with first insulator and establish, and interconnects, wherein, and second insulating barrier of second electrode pair of the second insulator cover part, part and the reflector of part; First knitting layer is formed on first electrode pair and second insulating barrier; Second knitting layer is formed on second electrode pair and the reflector, and second knitting layer is relative with first knitting layer and establish, and electrically connects mutually.
In addition, for reaching above-mentioned purpose, may further comprise the steps according to a kind of manufacturing method for LED of the present invention: form first electrode on the heat-conducting substrate; Form second electrode on the light-emitting diode; Form first insulating barrier between first electrode pair; Form second insulating barrier between second electrode pair; Form the reflector on first insulating barrier, after passing through second insulating barrier, can pass through this light of this reflective layer reflects from the light that is sent between second electrode pair; Form first electrode pair of the first insulator cover part and first insulating barrier of part; Form the reflector of second electrode pair, second insulating barrier and the part of the second insulator cover part; Form first knitting layer on first electrode pair and second insulating barrier; Form second knitting layer on second electrode pair and reflector; And first electrode pair and second electrode pair be oppositely arranged, and engage first knitting layer and second knitting layer.
The heat-conducting substrate of above-mentioned light-emitting diode assembly is the insulating heat-conductive substrate, when being metal heat-conducting substrate as if it, then must form the heat conductive insulating layer again on the first surface of heat-conducting substrate, to avoid metal heat-conducting substrate and light-emitting diode short circuit.In addition, the material of first insulating barrier and second insulating barrier can be aluminium nitride or carborundum, and its thermal conductivity is all greater than 200W/mk, therefore can be with thermal energy conduction that light-emitting diode produced to heat-conducting substrate.
From the above, because of foundation a kind of light-emitting diode assembly of the present invention and manufacture method thereof, utilize first insulating barrier, second insulating barrier, first insulator and second insulator with isolate respectively between first electrode pair electrically and between second electrode pair electrically, make it have the good insulation performance effect, and use the insulating material of high thermal conductivity, make and good heat dissipation path can be arranged to conduct to heat-conducting substrate by the heat energy that light-emitting diode produced.
Description of drawings
Fig. 1 is for showing the schematic diagram of known a kind of light-emitting diode assembly.
Fig. 2 is for showing the flow chart according to a kind of manufacturing method for LED of the preferred embodiment of the present invention.
Fig. 3 A to Fig. 3 E is for showing the schematic diagram that cooperates with the process step of Fig. 2.
Fig. 4 A and Fig. 4 B are for showing the structural representation of selecting different heat-conducting substrates according to the light-emitting diode assembly of the preferred embodiment of the present invention for use.
Description of reference numerals
1,2: light-emitting diode assembly
11: light-emitting diode
111: sapphire substrate
112,222:n N-type semiconductor N doped layer
113,223: luminescent layer
114,224:p N-type semiconductor N doped layer
115: insulating barrier
12: bearing substrate
121: carrier
122: conductive pattern layer
E01: first reflecting electrode
E02: second reflecting electrode
B01: conductive projection
21: heat-conducting substrate
21 ': metal heat-conducting substrate
21 ": composite substrate
211: the surface
22: light-emitting diode
221: epitaxial substrate
23: the first insulating barriers
24: the second insulating barriers
25: the reflector
26: the first insulators
27: the second insulators
28: the first knitting layers
29: the second knitting layers
E21: first electrode pair
E22: second electrode pair
E21a, E21b, E22a, E22b: electrode
M01: insulating heat-conductive structure
TC1: heat conductive insulating layer
Embodiment
Hereinafter with reference to relevant drawings, light-emitting diode assembly and manufacture method thereof according to the preferred embodiment of the present invention are described.
Please refer to shown in Figure 2ly, comprise that according to the manufacture method of the light-emitting diode assembly of the preferred embodiment of the present invention step S1 is to step S10.
Please be simultaneously with reference to shown in Fig. 3 A to Fig. 3 E, the schematic diagram of the light-emitting diode assembly 2 that it cooperates with the step of Fig. 2.
As shown in Figure 3A, step S1 forms the first electrode pair E21 on the surface 211 of heat-conducting substrate 21, and the first electrode pair E21 comprises electrode E21a and electrode E21b.And step S2 forms the second electrode pair E22 on light-emitting diode 22.In the present embodiment, light-emitting diode is a upside-down mounting chip light-emitting diode, anticipates promptly, and it forms n N-type semiconductor N doped layer 222, luminescent layer 223 and p N-type semiconductor N doped layer 224 in regular turn on epitaxial substrate 221.Wherein, Bu Fen n N-type semiconductor N doped layer 222 is exposed to p N-type semiconductor N doped layer 224 and luminescent layer 223.In addition, in the present embodiment, the second electrode pair E22 comprises electrode E22a and electrode E22b, and the electrode E22a wherein of the second electrode pair E22 is formed on the p N-type semiconductor N doped layer 224, and another electrode E22b is formed on the n N-type semiconductor N doped layer 222.Moreover the electrode E21a wherein of electrode E22a and the first electrode pair E21 is relative and establish, and another electrode E21b of electrode E22b and the first electrode pair E21 is relative and establish.
Shown in Fig. 3 B, step S3 forms first insulating barrier 23 between the first electrode pair E21.Wherein, first insulating barrier 23 is formed between electrode E21a and the E21b.Step S4 forms second insulating barrier 24 between the second electrode pair E22.Wherein, second insulating barrier 24 is formed between electrode E22a and the E22b.
Shown in Fig. 3 C, step S5 forms reflector 25 on second insulating barrier 24, after passing through second insulating barrier 24 from the light that is sent between the electrode E22a of the second electrode pair E22 and the electrode E22b, can pass through reflector 25 with its reflection.Step S6 forms first electrode pair E21 of first insulator, 26 cover parts and first insulating barrier 23 of part.Step S7 forms the reflector 25 of the second electrode pair E22, second insulating barrier 24 and the part of second insulator, 27 cover parts.At this, first insulator 26 isolate between the electrode E21a of the first electrode pair E21 and the E21b electrically, and second insulator 27 isolate between the electrode E22a of the second electrode pair E22 and the E22b electrically.
Shown in Fig. 3 D, step S8 forms first knitting layer 28 on the first electrode pair E21 and first insulating barrier 23.Step S9 forms second knitting layer 29 on the second electrode pair E22 and reflector 25.In the present embodiment, first knitting layer 28 and second knitting layer 29 can screen painting or the mode of plating form.
Shown in Fig. 3 E, step S10 is oppositely arranged the first electrode pair E21 and the second electrode pair E22, and engages first knitting layer 28 and second knitting layer 29, to finish light-emitting diode assembly 2.In the present embodiment, when the material of first knitting layer 28 and second knitting layer 29 was tin cream, it can pass through reflow process, and it is bonded with each other.
From the above, in step S1 and step S2, the first electrode pair E21 and the second electrode pair E22 can be formed on heat-conducting substrate 21 and the light-emitting diode 22 simultaneously respectively; In step S3 and step S4, first insulating barrier 23 and second insulating barrier 24 can be formed at respectively simultaneously and reach between the second electrode pair E22 between the first electrode pair E21; In step S6 and step S7, first insulator 26 and second insulator 27 can form respectively simultaneously; And in step S8 and step S9, first knitting layer 28 and second knitting layer 29 can form respectively simultaneously.
Shown in Fig. 3 E, in the present embodiment, heat-conducting substrate 21 is an insulated substrate, and its material is such as but not limited to pottery; First insulating barrier 23 and second insulating barrier 24 can be printing opacity heat conductive insulating layer, and its material can be aluminium nitride (AlN) or carborundum (SiC).Wherein the thermal conductivity of aluminium nitride is about 200～230 (W/mk), and the thermal conductivity of carborundum is about 300～490 (W/mk), therefore can conduct heat energy effectively; The material of first insulator 26 and second insulator 27 is such as but not limited to photoresist; Reflector 25 can be metallic reflector, its material can be selected from platinum, palladium, gold, silver, aluminium, chromium, titanium and group that combination constituted thereof, in addition, reflector 25 also can be thin film reflective layer, it can be formed by the film of high index of refraction and the film combinations of low-refraction, and its material can comprise and receives the micron particles material; The choosing of the material of first knitting layer 28 and second knitting layer 29 can be from tin cream, silver paste, tin silver paste, copper billet and group that combination constituted thereof.
Below, for ease of explanation, with the first electrode pair E21, the second electrode pair E22, first insulating barrier 23, second insulating barrier 24, reflector 25, first insulator 26, second insulator 27, first knitting layer 28 and second knitting layer, 29 titles is insulating heat-conductive structure M01.
Please refer to shown in Fig. 4 A, when heat-conducting substrate was a metal heat-conducting substrate 21 ', its material was selected from copper, aluminium and group that combination constituted thereof.At this, the manufacture method of light-emitting diode assembly will also be included on the heat-conducting substrate and to form heat conductive insulating layer TC1, to avoid metal heat-conducting substrate 21 ' to see through insulating heat-conductive structure M01 with light-emitting diode 22 short circuits.
In addition, shown in Fig. 4 B, when heat-conducting substrate is a composite material heat-conducting substrate 21 " time, its material can be copper/CuAl
2O
4/ pottery (212 "/213 "/214 ") heat-conducting substrate that constituted.And composite material heat-conducting substrate 21 " combine the good advantage of metal heat-conducting substrate heat radiation, and the good and low advantage of the coefficient of expansion of insulating heat-conductive substrate heat conduction.Therefore, according to the actual difference of using, the heat-conducting substrate that can select to be fit to uses.
In sum, according to a kind of light-emitting diode assembly of the present invention and manufacture method thereof, utilize first insulating barrier, second insulating barrier, first insulator and second insulator with isolate respectively between first electrode pair electrically and between second electrode pair electrically, make it have the good insulation performance effect, and use the insulating material of high thermal conductivity, make and good heat dissipation path can be arranged to conduct to heat-conducting substrate by the heat energy that light-emitting diode produced.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, in the scope of the claim that all should be contained in.
Claims (19)
1. the manufacture method of a light-emitting diode assembly comprises:
Form first electrode on the heat-conducting substrate;
Form second electrode on the light-emitting diode;
Form first insulating barrier between this first electrode pair;
Form second insulating barrier between this second electrode pair;
Form the reflector on this second insulating barrier;
Form this first electrode pair of the first insulator cover part and this first insulating barrier of part, wherein this first insulator isolate between this first electrode pair electrically;
Form this second electrode pair, this second insulating barrier of the second insulator cover part and this reflector of part, wherein this second insulator isolate between this second electrode pair electrically;
Form first knitting layer on this first electrode pair and this first insulating barrier;
Form second knitting layer on this second electrode pair and this reflector; And
This first electrode pair and this second electrode pair are oppositely arranged, and engage this first knitting layer and this second knitting layer, wherein this first knitting layer between this first insulating barrier and this first insulator engages with this second knitting layer between this reflector and this second insulator.
2. manufacture method as claimed in claim 1, wherein this first electrode pair and this second electrode pair formation, this first insulating barrier and this second insulating barrier formation respectively simultaneously respectively simultaneously, perhaps, this first knitting layer and this second knitting layer form respectively simultaneously.
3. manufacture method as claimed in claim 1, wherein this first knitting layer is formed on this first electrode pair and this reflector with screen painting or plating.
4. manufacture method as claimed in claim 1, wherein this second knitting layer is formed on this second electrode pair and this second insulating barrier with screen painting or plating.
5. manufacture method as claimed in claim 1 is wherein gone forward for this heat-conducting substrate in forming this first electrode, also comprises a step:
Form the heat conductive insulating layer on this heat-conducting substrate;
Wherein, this heat-conducting substrate is a metal heat-conducting substrate, and the material of this metal heat-conducting substrate is selected from copper, aluminium and group that combination constituted thereof.
6. manufacture method as claimed in claim 1, wherein this heat-conducting substrate is that the material of insulating heat-conductive substrate or composite material heat-conducting substrate, this insulating heat-conductive substrate is pottery, and the material of this composite material heat-conducting substrate is copper/CuAl
2O
4/ pottery.
7. manufacture method as claimed in claim 1, wherein the material of this first insulating barrier and this second insulating barrier comprises aluminium nitride, carborundum or photoresist.
8. manufacture method as claimed in claim 1, wherein should be after the light that is sent between this second electrode pair passing through this second insulating barrier, by this light of this reflective layer reflects, this reflector is metallic reflector or thin film reflective layer, and the material in this reflector is selected from platinum, palladium, gold, silver, aluminium, chromium, titanium and group that combination constituted thereof.
9. manufacture method as claimed in claim 1, wherein this reflector comprises and receives the micron particles material.
10. manufacture method as claimed in claim 1, wherein the material of this first knitting layer and this second knitting layer is selected from tin cream, silver paste, tin silver paste, copper billet and group that combination constituted thereof, and this first knitting layer and this second knitting layer have conduction and heat conduction function.
11. a light-emitting diode assembly comprises:
Heat-conducting substrate has a surface;
Light-emitting diode;
First electrode pair is formed on this surface of this heat-conducting substrate;
Second electrode pair is formed on this light-emitting diode, and relative with this first electrode pair and establish;
First insulating barrier is formed between this first electrode pair;
Second insulating barrier is formed between this second electrode pair;
The reflector is formed on this second insulating barrier;
First insulator, this first insulating barrier of this of cover part first electrode pair and part, wherein this first insulator isolate between this first electrode pair electrically;
Second insulator, relative with this first insulator and establish, and interconnect, this second insulating barrier of this second electrode pair of this second insulator cover part, part and this reflector of part, wherein this second insulator isolate between this second electrode pair electrically;
First knitting layer is formed on this first electrode pair and this first insulating barrier; And
Second knitting layer, be formed on this second electrode pair and this reflector, this second knitting layer is relative with this first knitting layer and establish, and mutually electrically connect, wherein this first knitting layer between this first insulating barrier and this first insulator engages with this second knitting layer between this reflector and this second insulator.
12. light-emitting diode assembly as claimed in claim 11 also comprises:
The heat conductive insulating layer is formed on this surface of this heat-conducting substrate;
Wherein, this heat-conducting substrate is a metal heat-conducting substrate, and the material of this metal heat-conducting substrate is selected from copper, aluminium and group that combination constituted thereof.
13. light-emitting diode assembly as claimed in claim 11, wherein this heat-conducting substrate is that the material of insulating heat-conductive substrate or composite material heat-conducting substrate, this insulating heat-conductive substrate is pottery, and the material of this composite material heat-conducting substrate is copper/CuAl
2O
4/ pottery.
14. light-emitting diode assembly as claimed in claim 11, wherein the material of this first insulating barrier and this second insulating barrier comprises aluminium nitride, carborundum or photoresist.
15. light-emitting diode assembly as claimed in claim 11 wherein should be after the light that is sent between this second electrode pair passing through this second insulating barrier, by this light of this reflective layer reflects, and this reflector is metallic reflector or thin film reflective layer.
16. light-emitting diode assembly as claimed in claim 11, wherein the material in this reflector is selected from platinum, palladium, gold, silver, aluminium, chromium, titanium and group that combination constituted thereof.
17. light-emitting diode assembly as claimed in claim 11, wherein this reflector comprises and receives the micron particles material.
18. light-emitting diode assembly as claimed in claim 11, wherein the material of this first knitting layer and this second knitting layer is selected from tin cream, silver paste, tin silver paste, copper billet and group that combination constituted thereof, and this first knitting layer and this second knitting layer have conduction and heat conduction function.
19. light-emitting diode assembly as claimed in claim 11, it is a upside-down mounting chip light-emitting diode assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100017816A CN101226972B (en) | 2007-01-16 | 2007-01-16 | LED device and preparing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100017816A CN101226972B (en) | 2007-01-16 | 2007-01-16 | LED device and preparing process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101226972A CN101226972A (en) | 2008-07-23 |
| CN101226972B true CN101226972B (en) | 2011-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100017816A Expired - Fee Related CN101226972B (en) | 2007-01-16 | 2007-01-16 | LED device and preparing process thereof |
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| Country | Link |
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| CN (1) | CN101226972B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013452B (en) * | 2010-03-21 | 2016-06-01 | 秦彪 | LED lamp and LED chip and manufacture method |
| CN102447016A (en) * | 2010-10-09 | 2012-05-09 | 佛山市奇明光电有限公司 | LED (Light Emitting Diode) structure and manufacturing method thereof |
| CN102185073B (en) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | Flip light-emitting diode and manufacturing method thereof |
| CN102368528B (en) * | 2011-10-25 | 2014-06-04 | 晶科电子（广州）有限公司 | Luminescent device with high heat dissipation performance and manufacturing method thereof |
| TWI449225B (en) * | 2011-12-16 | 2014-08-11 | Genesis Photonics Inc | Semiconductor package structure |
| CN108598230A (en) * | 2012-07-18 | 2018-09-28 | 世迈克琉明有限公司 | Light emitting semiconductor device |
| CN103928577A (en) * | 2014-04-02 | 2014-07-16 | 陕西光电科技有限公司 | Plate type LED packaging method and LED packaged with method |
| TWI614920B (en) | 2014-05-19 | 2018-02-11 | 晶元光電股份有限公司 | Optoelectronic device and method for manufacturing the same |
| CN105280665B (en) * | 2014-06-23 | 2020-05-15 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
| JP6529223B2 (en) * | 2014-06-30 | 2019-06-12 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | Photoelectric parts |
| CN106549089A (en) * | 2015-09-21 | 2017-03-29 | 茂邦电子有限公司 | Crystal coated sealing structure of light-emitting diodes |
| WO2017049419A1 (en) * | 2015-09-21 | 2017-03-30 | 璩泽明 | Flip-chip light emitting diode package structure |
| CN105428505A (en) * | 2015-12-28 | 2016-03-23 | 福建鸿博光电科技有限公司 | Support used for LED flip die bond and die bond method utilizing support |
| JP6843916B2 (en) * | 2019-05-14 | 2021-03-17 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | Photoelectric parts |
| JP7223046B2 (en) * | 2021-02-24 | 2023-02-15 | 晶元光電股▲ふん▼有限公司 | photoelectric components |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
| US6969874B1 (en) * | 2003-06-12 | 2005-11-29 | Sandia Corporation | Flip-chip light emitting diode with resonant optical microcavity |
-
2007
- 2007-01-16 CN CN2007100017816A patent/CN101226972B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
| US6969874B1 (en) * | 2003-06-12 | 2005-11-29 | Sandia Corporation | Flip-chip light emitting diode with resonant optical microcavity |
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| CN101226972A (en) | 2008-07-23 |
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