CN101236895B - Method for manufacturing material independent thickness using one or multiple semiconductor substrate - Google Patents

Method for manufacturing material independent thickness using one or multiple semiconductor substrate Download PDF

Info

Publication number
CN101236895B
CN101236895B CN2008100091490A CN200810009149A CN101236895B CN 101236895 B CN101236895 B CN 101236895B CN 2008100091490 A CN2008100091490 A CN 2008100091490A CN 200810009149 A CN200810009149 A CN 200810009149A CN 101236895 B CN101236895 B CN 101236895B
Authority
CN
China
Prior art keywords
thickness
particle
zone
semiconductor substrate
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100091490A
Other languages
Chinese (zh)
Other versions
CN101236895A (en
Inventor
弗兰乔斯·J·亨利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/019,886 external-priority patent/US7910458B2/en
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of CN101236895A publication Critical patent/CN101236895A/en
Application granted granted Critical
Publication of CN101236895B publication Critical patent/CN101236895B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles provided at a first implant angle generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles at a second implant angle generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.

Description

Utilize the method for the free-standing thickness of one or more Semiconductor substrate manufactured materialss
The cross reference of related application
This non-temporary patent application requires the priority of No. the 60/887th, 086, the U.S. Provisional Patent Application submitted on January 29th, 2007, it is incorporated into this is used for all purposes.
Technical field
Present invention relates in general to such technology, it comprises the method and structure that utilizes layer transfer technology to form substrate.More specifically, this method and system provide a kind of utilization to be used to prepare the method and system of the linear accelerator technology of thick free-standing semiconductor film (be used for various application, comprise photocell).But will be appreciated that, the present invention has the application of wider scope, and its application that also can be used for other types is as being used for the three-dimensional packing of integrated-semiconductor device, photon or photoelectronic device, piezoelectric device, flat-panel monitor, dimension electric system (" MEMS "), nanometer technology structure, transducer, integrated circuit, biology and biomedical devices etc.
Background technology
Since the dawn of human civilization, the mankind depend on " sun " to obtain the energy of nearly all form.Such energy is from oil, radiation source, wood and various forms of heat energy.Only as an example, it is gentle as the coal that is used for their a lot of needs that the mankind have depended critically upon petroleum source.Unfortunately, such petroleum source is depleted and caused other problems.(partly) as an alternative proposed solar energy to reduce our dependence to petroleum source.Only as an example, solar energy can derive from " solar cell " made by silicon usually.
When the solar radiation that is exposed to from the sun, silicon solar cell produces electric energy.This radiation and silicon atom interact and form electronics and move to that p-in the silicon body injects and the hole of n-injection zone, and between this injection zone generation voltage difference and electric current.According to applicable cases, solar cell has been integrated with lumped elements and has renderd a service to improve.As an example, the solar radiation utilization is directed to such radiation the lumped elements on one or more parts of active photoelectric material and is gathered and focus on.Although these solar cells still have many limitations effectively.
Only as an example, solar cell depends on parent material such as silicon.Such silicon often is to utilize polysilicon (that is polycrystalline silicon) and/or single crystal silicon material to make.These materials often are difficult to preparation.Polycrystal silicon cell often forms by the preparation polysilicon films.Although can effectively form these plates, they do not have the optimum performance that is used for highly effective solar cell.Monocrystalline silicon has and is suitable for senior Solar cell performance.Yet such monocrystalline silicon costs an arm and a leg and also is difficult to and is used for Application of Solar Energy in cost-effective mode.In addition, the generating material loss in traditional preparation so-called " kerf loss (kerf loss) " process of polysilicon and single crystal silicon material wherein becomes the sawing technology of the wafer shape factor to eliminate as many as 40% even up to 60% parent material by the crystal ingot of foundry goods or growth and with material unification (singulate).The preparation that it is invalid that this is a kind of height is used for the method for the thin polysilicon or the monocrystalline silicon plate of solar cell.
Usually, thin-film solar cells is by utilizing less silicon materials but cheap, but their amorphous (or amorphous) or polycrystalline structure are lower than the effectiveness of more expensive big (piece) silion cell of being made by monocrystalline substrate.Can specification of the present invention in the whole text in, more specifically hereinafter, can find these and other limitations.
According to above-mentioned, as can be seen, to be used to form high-quality and cheaply the technology of suitable substrate material have the height demand.
Summary of the invention
According to the present invention, provide be used to utilize layer transfer technology to form the technology of the method and structure of substrate a kind of comprising.More specifically, this method and system provide a kind of utilization to be used to prepare the method and system of the linear accelerator technology of thick free-standing semiconductor film (be used for various application scenarios, comprise photocell).But will be appreciated that, the present invention has the application of wider scope, it also can be used for the application of other types, as is used for the three-dimensional packing of integrated-semiconductor device, photon or photoelectronic device, piezoelectric device, flat-panel monitor, microelectromechanical-systems (" MEMS "), nanometer technology structure, transducer, integrated circuit, biology and biomedical devices etc.
In an embodiment, the invention provides a kind of method, be used to utilize one or more Semiconductor substrate to make the material of free-standing thickness (layer), for example monocrystalline silicon, polycrystalline silicon, polysilicon, SiGe, germanium, carborundum, gallium nitride, III/IV family material and other materials.In an embodiment, this method comprises provides the Semiconductor substrate with surf zone and thickness.This method comprises that the surf zone that makes Semiconductor substrate stands to utilize more than first high energy particle of linear accelerator generation to form the zone at a plurality of absorptions position in cutting zone, this cutting zone is provided at surf zone below and treats the thickness of material separately with qualification, and Semiconductor substrate is maintained at first temperature.More than first high energy particle provides with first implant angle.In an embodiment, this method comprises that the surf zone that makes Semiconductor substrate stands more than second high energy particle that utilizes linear accelerator to produce, and provides this more than second high energy particle to increase to second stress level with the stress level (stress level) with cutting zone from first stress level.In a preferred implementation, Semiconductor substrate is maintained at second temperature, and this second temperature is higher than first temperature.This method utilizes for example controlled cutting technique of cutting technique to make the thickness (layer) independent (release) of detachable material as employed, term " first " and " second " are not used in restriction and should be explained by their its ordinary meaning, and can be similar and different according to specific implementations.
In an interchangeable embodiment, the invention provides a kind of method, be used to form layer material for transfer, for example monocrystalline silicon, polysilicon, polycrystalline silicon, SiGe, carborundum, gallium nitride, germanium, III/IV family material and other material of free-standing thickness.According to the balance that finds between each factor such as effectiveness, cost and following process such as impurity absorption, monocrystalline silicon can be the purity level of the sun (energy battery) level, semiconductor grade or levels of metal.Any monocrystalline silicon all can be cut into specific orientation, and this provides such as the advantage that is easy to cutting (preferred device operation) etc.For example, silicon solar cell can be cut into mainly have (100), (110) or (111) surface orientation, to produce such free-standing substrate.Certainly, also can prepare the parent material that has from the oriented surface of cutting intentionally of main crystal orientation by mistake.Certainly, can there be other variations, modification and substitute mode.This method comprises provides the crystalline substrate material with surf zone.This method comprises by surf zone be arranged on a substrate (base) in the size range to form accumulation region with first dosage range and the accumulation region that a plurality of first particles is incorporated into crystalline substrate material in first temperature range with formation with having the injection distribution of Cmax and space.A plurality of first particles provide with first implant angle.In an embodiment, first dosage range is less than is enough to make a plurality of particles forever to be configured in amount in the crystalline substrate material of accumulation region to form cutting zone.In an embodiment, first particle causes a plurality of defectives of the crystalline material in the cutting zone, and it is preferably by being limited greater than about 10 microns degree of depth at surf zone and below the crystalline material thin slice of waiting between cutting zone and the surf zone to separate.
In an optional embodiment, this method is included in implements treatment process so that form a plurality of permanent basically defectives (it is quenched by the crystalline substrate material of first particle) in accumulation region on the crystalline substrate material.This method also comprises with second dosage range and second temperature range a plurality of second particles is incorporated in the accumulation region, thereby internal stress in the accumulation region makes the accumulation region of a part become can to cut to increase.A plurality of second particles provide with second implant angle.In an embodiment, this method comprises the crystalline material that forms free-standing thickness (layer), wherein separates the crystalline material of this thickness by the reserve part from crystalline substrate material.
Further, the invention provides a kind of method, be used to utilize one or more Semiconductor substrate to form free-standing thickness of material.In a preferred implementation, this method utilizes one or more one patterned zones to promote to cause the cutting behavior.In an embodiment, the inventive method provides the Semiconductor substrate with surf zone and thickness.This method comprises that the surf zone that makes Semiconductor substrate stands to utilize more than first high energy particle of linear accelerator generation to form the one patterned zone at a plurality of absorptions position in cutting zone.In a preferred implementation, cutting zone is provided at the surf zone below to limit the thickness of material to be separated.Semiconductor substrate is maintained at first temperature.In an embodiment, first high energy particle provides with first implant angle.This method also comprises makes Semiconductor substrate stand treatment process, for example heat treatment.This method comprises that the surf zone that makes Semiconductor substrate stands second high energy particle, provides it to increase to second stress level with the stress level with cutting zone from first stress level.In an embodiment, Semiconductor substrate is maintained at second temperature and provides more than second particle with second implant angle.The selected location that this method is included in the one patterned zone causes the cutting behavior utilizing the separately thickness of the separated material of a part of cutting technique, and this thickness independent (release) that utilizes cutting technique to make can to separate material.
In another interchangeable embodiment, the invention provides a kind of method, be used for that for example monocrystalline silicon, polysilicon form material membrane from big (piece) Semiconductor substrate.In an embodiment, substrate also can have different shape as square, similar square, circle, annular, rectangle and other shapes.According to this execution mode, substrate can also be the combination of metal, insulator or these materials.This method comprises provides the Semiconductor substrate with surf zone and thickness, and it is the integral body of Semiconductor substrate thickness.This method comprises that the surf zone that makes Semiconductor substrate stands a plurality of particles (for example to form cutting zone, a plurality of particles are from single or multiple infusions and/or disperse embedding), it is limited at the surf zone below to form stress area and to limit the thickness of waiting to separate material.According to this execution mode, the thickness of material has about 20 microns and bigger thickness, perhaps can be thinner a little, as long as it is freestanding, and self-supporting for example, no bracing piece (stiffener) etc.In an embodiment, this method comprises the thickness independent (release) that utilizes cutting technique to make can to separate material, keep being connected to the part of stress area of the thickness of this material simultaneously, so that the thickness of this material is characterised in that the shape of distortion, for example edge or end regions bending.In an embodiment, this method comprises this part of the stress area of removing the thickness (layer) that is connected to this material, so that the shape of distortion is removed and produces the shape on plane basically, it is flat or analogue generally.
In a preferred implementation, this method comprises that one or more technology cause the part of stress area of the thickness deformation of material with removal.In an embodiment, described removal comprises the part of etching stress area, and this makes the thickness of material that deformed shape just be arranged.That is to say that etching can be optionally to remove stress area, this can be the zone of injecting affected area and/or having the hydrogen and/or the similar impurity of higher concentration.In an embodiment, etching can be wet etching and/or dry method etch technology etc.In an embodiment, described removal also can utilize the generation that separates thick layer of heat treatment material to discharge stress (stressed) zone.Replacedly, according to this execution mode, can there be etching and/or heat treated combination.
Further, the invention provides a kind of method, be used for forming material membrane by big (piece) Semiconductor substrate, its intrinsic composite character of utilizing cutting material is to promote from remaining the separation of big substrate part.In an embodiment, this method comprises provides the Semiconductor substrate with surf zone and thickness.This method comprises that the surf zone that makes Semiconductor substrate stands a plurality of particles to form cutting zone, and it is limited at the surf zone below and treats the separately thickness of material to form stress area and to limit.In an embodiment, the thickness of material has about 20 microns and bigger thickness, but can be thinner a little, as long as it is freestanding.In an embodiment, this method comprises that near the selectivity energy at the area of space place in utilization is cutting zone replaces and cause the separation for the treatment of the part of material thickness separately at the fringe region place of cutting zone, has the separate section of the material thickness of a stress area part with formation.In an embodiment, this method comprises from the separate section of area of space bending away from material thickness, and makes the deformed shape in the material thickness separately partly remove the thickness of this material with promotion from remaining substrate.In an embodiment, this energy can be to be selected from one or more sources, as for example gas, liquid or the combination of light source, lasing light emitter, thermal source, radiation source, mechanical sources, chemical source, gravity source or fluid source.Certainly, can there be other variations, change and replacement.
In execution mode further, the invention provides another method, be used to utilize one or more Semiconductor substrate to make free-standing thickness of material.In an embodiment, the inventive method comprises provides the Semiconductor substrate with surf zone and thickness.This method comprises more than first high energy particle that makes semi-conductive surf zone stand to comprise to utilize the D+ material that linear accelerator produces, to form a plurality of absorptions position in cutting zone, this cutting zone is provided at the below of surf zone and treats the separately thickness of material with qualification.This method comprises makes Semiconductor substrate stand treatment process according to embodiment.This method comprises that the surf zone that makes Semiconductor substrate stands to comprise more than second high energy particle of the H2+ material that utilizes the linear accelerator generation, preferably identical with the linear accelerator that the D+ material is provided linear accelerator.In an embodiment, more than second high energy particle is provided to the stress level of cutting zone is increased to second stress level from first stress level.The selected location initiation cutting behavior that this method is included in cutting zone separately can separate the part of the thickness of material to utilize cutting technique.This method comprises makes the thickness independent (release) that can separate material.
Utilize embodiments of the present invention, realize many benefits on the basis of existing technology.Particularly, embodiments of the present invention utilize cost-effective linear accelerator equipment and being used to be provided for the method for the high energy particle injection technology of layer transfer technology.Such linear accelerator equipment can include but not limited to drift-tube technique, radio frequency four utmost points (being commonly referred to RFQ) or these combination (for example, RFQ associating drift tube or RFI (RF-focuses on interdigitated) linear accelerator), DC accelerator and other appropriate technologies.In a preferred implementation, linear accelerator provides the thickness that forms the transferable material that limits by the cutting planes in the donor substrate.The thickness of transferable material can be further processed to be provided for injecting the high-quality semiconductor material that optoelectronic device is used, and is used for the effective photronic 3D MEMS of height or integrated circuit, IC packing, semiconductor device, carborundum and gallium nitride film among other.In a preferred implementation, the energy particle of the low predose of the inventive method and structure utilization, it makes that this technology can be to save cost and effective.In addition, the inventive method and structure allow to be used to make the large tracts of land substrate.To find that the present invention can be applicable to prepare the thin silicon plate of material (for example, be used for 50 μ m-200 μ m thickness of polysilicon films, the area size is from 12.5cm * 12.5cm to the 1m * 1m or the bigger upper limit) of the intended shape factor.In a replaceable preferred implementation, can be provided for further to be provided for the Seed Layer of stratification heterostructure epitaxy technique according to the embodiment of the present invention.This heterostructure technology can be used for forming thin many in conjunction with photoelectromagnetic (among other).Only as an example, GaAs and GaInP layer can deposit to heteroepitaxy the germanium Seed Layer, and it is the transfer layer that utilizes injection technology according to the embodiment of the present invention to form.In an embodiment, the inventive method can be used for continuously from single (silicon) ingot for example the silicon ingot casting cut a plurality of thin slices.That is to say that this method can be repeated with continuous dicing sheet (being similar to by baking breading slices) according to an embodiment.Certainly, can there be other variation, change and replacement.
According to this execution mode, one or more can being implemented in these benefits.These and other benefits can be described in the whole text at specification of the present invention, more specifically are described hereinafter.
Description of drawings
Fig. 1 is the process chart of simplifying, and understands that for example a kind of thick layer transfer process that utilizes according to an embodiment of the invention forms the method for substrate.
Fig. 2-the 8th, the diagrammatic sketch of simplifying understands that for example a kind of thick layer transfer process that utilizes according to an embodiment of the invention forms the method for substrate.
Fig. 8 A is the diagrammatic sketch of simplifying, and for example understands the cutting that utilizes Technology for Heating Processing according to an embodiment of the invention.
Fig. 9-the 15th, the diagrammatic sketch of simplifying understands that for example a kind of utilize one patterned infusion and thick layer transfer process according to an embodiment of the invention forms the method for substrate.
Figure 16-the 20th, the diagrammatic sketch of simplifying is for example understood a kind of replaceable method that forms substrate according to the back cutting processing of utilizing thick-layer to shift of an embodiment of the invention.
Figure 21-the 25th, the diagrammatic sketch of simplifying is for example understood the experimental result according to an embodiment of the invention.
Embodiment
According to the embodiment of the present invention, provide the technology that comprises the method that is used to form substrate.More specifically, according to the embodiment of the present invention, provide a kind of method that forms the stand alone type layer of material by semi-conducting material.In an embodiment, the stand alone type layer of material utilizes a plurality of high energy particles to be provided to cause forming cut surface in Semiconductor substrate.The method according to this invention can be used in the various application, includes but not limited to semiconductor device packing, photocell, MEMS device and other products.
In an embodiment, a kind ofly utilize one or more Semiconductor substrate to come the method for the free-standing thickness (layer) of manufactured materials to provide as follows:
1. the Semiconductor substrate with surf zone and thickness is provided;
2. make the surf zone of Semiconductor substrate stand more than first high energy particle that utilizes linear accelerator to produce, this more than first high energy particle provides with first angle that the direction by more than first high energy particle and surf zone limits;
3. form the zone at a plurality of absorptions position in cutting zone, it is provided at the surf zone below and treats the thickness of material separately with qualification, and this cutting zone is maintained at first temperature simultaneously;
4. alternatively, implementing Technology for Heating Processing on this Semiconductor substrate further in this cutting zone, to form a plurality of absorptions position;
5. make the surf zone of this Semiconductor substrate stand more than second high energy particle that utilizes described linear accelerator to produce, this more than second high energy particle provides with second angle that the direction by this more than second high energy particle and surf zone limits;
6. by more than second high energy particle, the stress level of cutting zone is increased to second stress level from first stress level, make Semiconductor substrate remain on second temperature simultaneously;
7. utilize cutting technique, make the thickness independent (release) that can separate material (it is stand alone type), this can separate material does not simultaneously have stacked supporter or analog;
8. the material thickness that separates is placed on the strutting piece;
9. on the thickness of this material that separates, implement one or more technologies;
10. alternatively, surf zone is stood before more than first high energy particle, on this Semiconductor substrate, implement one or more technologies; And
11. implement other steps as required.
Above sequence of steps provides a kind of linear accelerator technology of utilizing according to an embodiment of the invention to form the method for substrate.As shown, this method comprises utilizes common injection technology (co-implant process) shifting out the film of material, the film of this material preferably thick with freestanding.The method of other optional replacements also can be provided, wherein can increase step, can remove one or more steps, perhaps can provide one or more steps and do not deviate from the scope of this paper claim with different order.For example, high energy implantation step 5 can be replaced by any combination of single technology alternatively, includes but not limited to that thermal activation liquid, plasma hydrogenation step, low energy are injected and diffusion or other technologies (it allows hydrogen to be introduced into and passes through according to diffusion, the gathering of an embodiment in drawing the position).The further details of this method can more specifically find in the whole text hereinafter at this specification.
Fig. 2-the 8th simplifies diagrammatic sketch, for example understands a kind of method of utilizing thick layer transfer process to form substrate according to one embodiment of the present invention.These diagrammatic sketch only are examples, and it should exceedingly not limit the scope of the claim of citation herein.Those of ordinary skill in the art will recognize that many variations, modification and substitutes.Go out as shown, this method is by providing the Semiconductor substrate 200 with surf zone 201, the back side 203 and thickness.Such thickness can be (thickness) or analogue whole ingot casting or that downcut from big ingot casting etc.In an embodiment, Semiconductor substrate can be monocrystalline silicon piece, polycrystalline foundry goods sheet, brick (tile) or substrate, SiGe sheet, germanium wafer, carborundum, III/V family material, II/VI family material, gallium nitride similar substance alive.In a preferred implementation, substrate can be a light-sensitive material.Certainly, there are other variations, change and replacement.
With reference to Fig. 3, this method comprises that the surf zone that makes Semiconductor substrate stands more than first high energy particle 301 that utilizes linear accelerator to produce.In an embodiment, this particle causes in cutting zone 401 forming a plurality of absorptions position or accumulation region, and this cutting zone 401 is provided at the surf zone below and treats the thickness of material 405 separately with qualification, shown in the reduced graph of Fig. 4.Preferably, more than first high energy particle injection distribution with Cmax and space are provided is arranged on the substrate (base) of the degree of depth of this Semiconductor substrate.Preferably, this substrate can have about 2Rp and littler width, and wherein " Rp " is commonly referred to " spreading (straggle) ", and it is through being usually used in characterizing the width that injects depth distribution.In a preferred implementation, cutting zone is maintained at first temperature 305 (it can directly or indirectly be provided).That is, according to an embodiment, this temperature can be provided by the combination of convection current, conduction, radiation or these technology.In an embodiment, this temperature can utilize before introducing the time of a part of particle, afterwards or even the rapid hot technics during it and being provided.Rapid hot technics can be the combination of uniform irradiation (or homogeneous ray irradiation, flood)) or one patterned or these technology.Only as an example, can provide rapid hot technics in injecting the ends of range layer, to obtain the optimization stress distribution of displacement silicon atom, wherein this stress be maximized but wherein the selection of rapid hot technics condition can overheated this layer to allow hydrogen and escape and to reduce absorption effectiveness.For purpose of the present invention, the overheated combination that is meant a temperature and time, it has made draws the progressive point of rendeing a service through optimization of layer.Certainly, can there be other variation, change and replacement.
In addition, energetic particle beam partial heat energy also can be provided and in conjunction with the external temperature source to obtain the implantation temperature of expectation.In one embodiment, energetic particle beam can provide whole heat energy that need be used to inject separately.That is to say, this energetic particle beam can be provided, it directly makes energy change into heat, to increase substrate temperature.In an embodiment, this particle changes into heat energy with kinetic energy, substrate temperature is increased to amount predetermined or expectation.The particle beams can have sweep speed and spatial character.Expand and to take place by quick electromagnetic scanning from the bundle of initial (light or ripple) Shu Daxiao, but also can take place, wherein be somebody's turn to do beam diameter and the distribution of line quantity space that (light or ripple) bundle will extend to expectation naturally by the drift of this bundle on certain distance.Certainly, can there be other variation, change and replacement.
According to application,, usually select more in a small amount particle to reduce for the energy requirement that is injected into the desired depth in the material and to reduce possibility to the infringement of material area according to a preferred implementation.That is to say that more Xiao Liang particle is easy to be sent to the selected degree of depth and do not damage the material area that this particle passes through basically by backing material.For example, particle (or high energy particle) more in a small amount can almost be charged arbitrarily (for example, plus or minus) and/or similar substances such as neutral atom or molecule or electronics.In an embodiment, particle can be neutral or electrically charged particle comprises the ion of ion such as hydrogen and isotopic ion, noble gas ion such as helium and isotope and neon or according to other ion of this execution mode.Particle also can derive from compound such as gas for example hydrogen, steam, methane and hydrogen compound, and other light atom amount particle.Replacedly, particle can be any combination of above particle and/or ion and/or molecular substance and/or atom species.These particles have enough kinetic energy usually to pass the selected degree of depth of surface arrival in this lower face.
Utilize hydrogen as entering as the injected material in the silicon wafer of an example, injection technology utilizes the specific condition that is provided with to implement.The scope of implantation dosage is about 1 * 10 15To about 1 * 10 16Individual atom/cm 2, and preferably, this dosage is less than about 5 * 10 16Individual atom/cm 2Inject energy range for about 1MeV and bigger, be used to form for the useful thick film of photovoltaic applications to about 2MeV and bigger.The scope of implantation temperature is-50 ℃ to+50 ℃ approximately approximately, and preferably be lower than about 450 ℃ to prevent that hydrogen ion from propagating into the outer possibility of silicon wafer of injection.Hydrogen ion can optionally be incorporated into this silicon wafer to the selected degree of depth with about ± 0.03 to ± 1.5 micron precision.Certainly, used ionic type and process conditions depend on application.
For higher injection energy, what be particularly useful is to have a pure basically protonation (for example positively charged or electronegative), to allow to be used for the cut surface of maximum magnitude in can be again with substrate.Utilize silicon as an example, the energy range of injection can be sizable and stride several keV of forming from the template that is used for photoelectric absorption device (wherein needing an epitaxial growth subsequently to render a service with the maximization light absorption) a lot of MeV to the substrate that is created in the hundreds of micron of measuring as solar cell wafer parent material thickness.For example can utilize SRIM2003 (Stopping Range In Matter) or Monte Carlo simulation program (http://www.srim.org/) to calculate as the general range of the injection degree of depth of the function that injects energy.In a concrete execution mode, the scope of utilizing the protonation energy for about 2MeV to about 5MeV, the scope of silicon film thickness is about 50 microns to about 200 microns.Certainly, can there be other variation, change and replacement.
In an embodiment, thickness range be about 50 μ m to the silicon fiml of about 200 μ m can utilize have energy range for about 2.1MeV extremely the protonation of about 5MeV form.The silicon film thickness of this scope allows separately to can be used as the thickness of the monocrystalline substrate equivalent of free-standing silicon substrate.Thickness range is 50 μ m can be used for substituting the sawing, etching and the glossing that utilize wafer to the monocrystalline substrate of about 200 μ m a present method.As overcoming about 50% kerf loss in the present technology (kerf loss be defined in cutting and become the wafer operating process in material unaccounted-for (MUF)), injecting cutting technique does not in fact have kerf loss, has caused substantial cost savings and material use efficient to improve.The energy that is higher than 5MeV can be used for preparing semiconductor machining and replace backing material, but in solar cell is made, and the thickness expectation of the silicon solar cell material that forms for the silicon solar cell of big (piece) is 200 μ m or littler.Therefore, thicker silicon substrate is not commercial especially favourable for make solar cell according to an embodiment.
As an example, the injection condition of MeV scope is by Reutov et al. (V.F.Reutov and Sh.Sh.Ibragimov, " Method for Fabricating Thin SiliconWafers ", USSR ' s Inventors Certificate No.1282757, December 30,1983) disclose, it is hereby expressly incorporated by reference.In V.G.Reutov and Sh.Sh.Ibragimov, the recycling substrate of optional heating and injection back that has disclosed in injection process adds heat utilization up to the 7MeV protonation, produces the separately silicon wafer thickness up to 350 μ m.Utilize 1MeV hydrogen to inject, the thermal cutting of 16 microns silicon fimls is also by M.K.Weldon ﹠amp; Al., " On the Mechanism of Hydrogen-Induced Exfoliation ofSilicon ", J.Vac.Sci.Technol., B 15 (4), and Jul/Aug 1997 discloses, and it is hereby expressly incorporated by reference.In this article, term " separates " or " silicon thickness of transfer " is meant, the silicon film thickness that forms by the ion range of injecting can be released into free-standing state or be released into permanent substrate or the interim substrate that is used for finally being used as free-standing substrate, or finally is fixed on the permanent substrate.In a preferred implementation, silicon materials are enough thick and do not serve as the handle substrate (or handle substrate, handle substrate) of strutting piece.Certainly, the special process that is used to handle and process this film will depend on concrete technology and application.
With reference to Fig. 5, the inventive method is implemented Technology for Heating Processing 503 on Semiconductor substrate, further to form a plurality of absorptions position in cutting zone.That is to say that this Technology for Heating Processing annealing and/or cancellation cutting zone are in position to fix more than 501 first particle.Heat treatment provides the fixed network of defective, and it can be used as the active component that is used for drawing and gathering in the combination of subsequently injection or hydrogenation or injection and/or diffusion technology particle.In an embodiment, think that the temperature that increases facilitates the network of (precipitate) permanent defects and catch most of hydrogen from more than first particle.This defect layer (it is permanent basically) provides and has been used for from subsequently injection and/or diffusion technology (will be described in more detail hereinafter at this specification) is effectively collected and the position of trapped particle in the whole text and more specifically.In a preferred implementation, heat treatment can utilize the combination in any of conduction, convection current, radiation or these technology that (carrying out) takes place.Energetic particle beam can also provide the heat energy of part and unite the external temperature source and the implantation temperature realizing expecting.In one embodiment, energetic particle beam can provide whole heat energy that expectation is used to inject separately.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises that the surf zone that makes Semiconductor substrate stands more than second high energy particle that utilizes linear accelerator to produce, and is illustrational as institute in the simplification diagrammatic sketch of Fig. 6.As shown in the figure, this method comprises more than second high energy particle 605, and it is provided in the Semiconductor substrate.Second particle is introduced in the cutting zone 607, and it increases to second stress level from more than second high energy particle with the stress level of cutting zone from first stress level.In an embodiment, second stress level is suitable for cutting technique subsequently.In a preferred implementation, Semiconductor substrate is maintained at second temperature 601, and it is higher than first temperature.
Utilize hydrogen as being injected into material in the silicon wafer as an example, injection technology utilizes the condition of specific setting to be implemented.The scope of implantation dosage is about 5 * 10 15To about 5 * 10 16Individual atom/cm 2, and more preferably this dosage is less than about 1-5 * 10 17Individual atom/cm 2The scope of injecting energy is used to form for the useful thick film of photovoltaic applications for about 1MeV and bigger to about 2MeV and bigger.The injectant dose rate can about 500 microamperes to about 50 milliamperes provides, and the accumulated dose rate can be by calculating at the regional upper integral injection rate of expansion (light or ripple) bundle.The scope of implantation temperature is-50 ℃ to about 550 ℃ approximately, and is preferably greater than about 350 ℃ for gathering step.Hydrogen ion is optionally to make an appointment with ± 0.03 to ± 1.5 micron precision to be introduced in the silicon wafer to the selected degree of depth.In an embodiment, select this temperature and dosage to allow effectively catching of molecular hydrogen, can there be the part diffusion of mon-H simultaneously.Certainly, the ionic type of use and process conditions depend on application.
For above-mentioned higher injection energy, what be particularly useful is to have pure basically protonation (for example, positively charged or negative electrical charge), to allow the cut surface of the maximum magnitude in recycling substrate.Utilize silicon as an example, the energy range of injection can be sizable and stride several keV of forming from the template that is used for the photoelectric absorption device (wherein allow to be used for subsequently epitaxial growth with the maximization efficiency of light absorption) to produce as the solar cell wafer parent material substrate a plurality of MeV of the measured hundreds of micron of thickness.As the common scope of the injection degree of depth of the function that injects energy for example can utilize SRIM 2003 (Stopping Range In Matter) or Monte Carlo simulation program ( Http:// www.srim.org/) calculated.In an embodiment, the scope of silicon film thickness is about 50 microns to about 100 microns or bigger, and for example about 200 microns, the scope of the protonation energy of utilization is about 2MeV about 5MeV extremely.Certainly, can there be other variations, change and replacement.
Effectively, injecting particle increases stress or reduces energy to failure along the plane of the top surface that is parallel to substrate at selected degree of depth place.This energy (partly) depends on injected material and condition.These particles reduce the energy to fracture level of substrate at selected degree of depth place.This permission is carried out controlled cutting at selected degree of depth place along injection plane.Injection can take place under such condition, so that be not enough to cause non-reversible fracture (that is, separate or cutting) at the energy state of the substrate at all interior location places in backing material.Yet, should be noted that injection causes a certain amount of defective (for example, microdefect) at substrate usually, it can pass through for example thermal annealing or rapid thermal annealing reparation of heat treatment subsequently usually at least in part.
In an embodiment, the high energy method for implanting that the inventive method utilizes quality to select, it has suitable beam intensity.In order to save cost, injecting line should be at H +Or H -On tens milliamperes the order of magnitude of ion beam current (if high like this energy, H can inject in system 2 +Ion also can advantageously be used to realize higher dose rate).Such equipment focuses on by utilizing radio frequency four utmost point linear accelerators (RFQ-Linac) or drift tube linear accelerator (DTL) or RF-that interdigitated (RF-Focused Interdigitated, RFI) technology has become recently and can obtain.These are from company such as Accsys Technology Inc.ofPleasanton, California, and Linac Systems, LLC of Albuquerque, NM87109 and other companies can obtain.
In an embodiment, the RF of the proton beam that these method utilizations are extracted quickens to increase to 0.5-7MeV or bigger with the scope with the gross energy of proton beam from about 20-100keV.The output bundle general diameter is at several millimeters the order of magnitude, and will need to utilize bundle to extend to the order of magnitude of hundreds of millimeter for the use in this application, on side,, become too big and might overheated or damage target surface so that avoid impinging upon power flow on the target surface to one meter or bigger.Can be for the proton stream that this technology can be used up to 100mA or bigger.As an embodiment, suppose the beam power of 100kW, 3.25MeV RFQ/RFI-Linac will produce the proton beam of about 31mA.Utilize about 1 * 10 16H/cm 2Dosage and the expanding beam of about 500mm * 500mm, area hourly is that about 7 square metres of while power flows are retained as about 13 watts/cm 2This combination of parameter makes this method especially practical for cost-effective manufacture of solar cells.In addition, electromagnetic beam scanning can advantageously be utilized with control available beam properties of flow.Certainly, can there be other variations, replacement and change.
In an embodiment, more than second particle also can utilize the combination in any of injecting and/or spreading to be introduced.In an embodiment, more than second particle can utilize the other technologies beyond described any high energy injection technique and this specification to be provided.Such technology (among other technologies) can comprise that ion is bathed, the plasma immersion ion injects and other plasma-treating technologies.Replacedly, some low energy technology comprises that diffusion can be used to more than second particle is incorporated in the absorption position.Only as an example, hydrogen and/or other particles can utilize actuating force such as convection current, conduction and/or radiation and/or these combination in any to be diffused into and draw in the position.According to this execution mode, such actuating force can be hot, machinery, chemistry and/or other types.Only as an example, more than second such particle can utilize the plasma hydrogenation under the goal condition that is heated or utilize electrolysis (hydrogenated liquid) mode to be introduced.Replacedly, a plurality of particles can utilize according to the injection of an embodiment and/or the combination of diffusion and be introduced.Certainly, can there be other variations, change and replacement.
Alternatively, this method is included in according to the Technology for Heating Processing after the injection technology of an embodiment.In an embodiment, the inventive method for silicon materials utilize scope about 450 ℃ to about 600 ℃ thermal process.In a preferred implementation, heat treatment can utilize the combination in any of conduction, convection current, radiation and these technology to take place.In an embodiment, temperature can utilize before the portion of time that particle is introduced into, afterwards or during utilize rapid hot technics to provide.Rapid hot technics can be the combination of uniform irradiation or one patterned technology or these technology.Only as an example, rapid hot technics can provide the chemical rearrangement that is used for locating to realize at scope end regions (end-of-range region) expectation of silicon and hydrogen, has realized wherein that maximization displacement silicon atom distributed stress distributes not cause that excessive hydrogen is to outdiffusion simultaneously.Well-known, rapid thermal annealing has such heat treatment benefit to the outdiffusion limitation.Certainly, can there be other variations, change and replacement.
In an embodiment, energetic particle beam also can provide partial heat energy and unite the external temperature source and the implantation temperature realizing expecting.In one embodiment, energetic particle beam can provide whole heat energy that need be used to inject separately.In a preferred implementation, treatment process takes place so that cutting zone is suitable for cutting technique subsequently.Certainly, can there be other variations, change and replacement.
In an embodiment, Semiconductor substrate can be set on the pallet apparatus 701, as shown in Figure 7.The a plurality of high energy particles 703 that produce in linear accelerator 704 are introduced in the surf zone 705 of Semiconductor substrate 707.Fig. 7 also show the reference sphere coordinate system (ρ,
Figure 2008100091490_0
, θ).The z-axle is perpendicular to the surf zone of Semiconductor substrate, and it defines the x-y face of Cartesian coordinates.The initial point of reference sphere coordinate and Cartesian coordinate is the inlet point 709 of a plurality of high energy particles on the surf zone of substrate.Distance from the outlet 711 of a plurality of high energy particles of linear accelerator to initial point defines the radial distance ρ the spherical coordinates.Also show from the azimuth angle theta of positive x-axle.Zenith angle between a plurality of high energy particles and z-axle
Figure 2008100091490_1
Limit implant angle.In an embodiment, pallet apparatus is configured to allow to be used for suitable implant angle.Particularly, pallet apparatus can utilize two preset names and can be selected by the control device (for example computer) according to method.Certainly, can there be other variations, change and replacement.
Mention the inventive method of the free-standing thickness that forms material once more, more than first high energy particle can provide with first implant angle.First implant angle can be spent with about 0 to about 30 to be provided.Near the high density network at the absorption position during such implant angle scope allows with the cut surface in the thickness of the Semiconductor substrate of an embodiment.Also can select this angle to minimize or replacedly to select a passage injecting scheme, itself and the goal congruence (consistent) that realizes best absorption position layer.More than second high energy particle can provide with second implant angle.Provide second implant angle to allow the passage and the depth distribution of this more than second high energy particle of coupling, to cause the optimum stress level near the crystal plane cutting zone.In an embodiment, the scope of second implant angle can be about 0 to about 15 degree.In a replaceable execution mode, the scope of second implant angle can be about 0 to spending less than 8 approximately.Only as an example, gathering step can maximize by the second injection Cmax is matched with the peak of drawing layer.Well-known, the degree of depth of injecting the defect distribution peak of the absorption layer that forms will be narrower than the hydrogen concentration peak of injection slightly.Utilize constant energy to inject, coupling can be injected from surface normal second and take place when the bigger angle of layer injection forms to draw than first.Utilize the 2MeV protonation as an example, first inject impaired peak will for than the narrow about 1 μ m of its peak hydrogen concentration (utilize SRIM 2003, this be about 47 μ m to 48 μ m hydrogen peaks, wherein supposition is vertical the injection and not annealing).Inject gathering of hydrogen in order to maximize second, the implant angles of about 12 degree will allow narrower second gather injection with the hydrogen concentration peak match in drawing layer.Certainly, the implant angle of use depends on application, person of skill in the art will appreciate that many variations, change and replacement.
In an embodiment, this method comprises the thickness independent step of utilizing cutting technique to make can to separate material along injection face 801 805, and it is freestanding, as shown in Figure 8, this can separate strutting piece or analog that material covers on not simultaneously, also as shown in Figure 8.As shown in the figure, can separate material 810 removes from remaining substrate part 815.In an embodiment, the step of independent (release) can utilize controlled cutting technique to implement.Controlled cutting technique provides selected energy in the part of the cutting zone of donor substrate.Only as an example, controlled cutting technique has been described in the United States Patent (USP) 6,013,563 of title for " controlled cutting technique ", transfer the SiliconGenesis Corporation of the San Jose in California jointly, it is incorporated into this is used for all purposes.Go out as shown, this method makes the thickness of material from the independent thickness with thorough this material of removal of substrate.
In an embodiment, cutting technique is implemented by utilizing Technology for Heating Processing 817, shown in Fig. 8 A.In a preferred implementation, Technology for Heating Processing provides thermal gradient in the thickness of Chen Ding, causes that especially stress locates to gather at cutting zone 823 (its be injected into or stand gathering of a plurality of particles).In an embodiment, thermal gradient can be by providing first temperature T 1 and providing second temperature T 2 to realize in the zone, the back side 821 of Semiconductor substrate in the surf zone 819 of Semiconductor substrate.According to this execution mode, T1 can be greater than T2 or replacedly T2 can be greater than T1.Also show cutting zone 823.Only as an example, heating can utilize various technology to finish.Such technology can comprise conduction, convection current, radiation and these any group of combination.According to an embodiment, conduction can comprise heating plate or other contact arrangements etc. or utilize the conduction of fluid and/or gas.In a replaceable execution mode, can use radiation.According to an embodiment, such radiation can comprise the heater lamp of heating lamp, photoflash lamp, laser lamp, fast heat.Replacedly, gas can flow to cause the temperature gradient in cutting zone on a surface or two surfaces.Replacedly, any surface can be cooled to predetermined temperature to cause crossing the thermal gradient of cutting zone.Be similar to heating technique, cooling can utilize conduction, convection current radiation or other technologies to take place.Certainly, can there be other variations, change and replacement.
In an embodiment, cutting technique can utilize laser to implement with the energy that is provided for cutting.According to an embodiment, utilize laser, institute's favored area can be formed to allow laser to see through a part of substrate and to allow energy to be absorbed at a part of cutting zone.That is, substrate and type of laser can be used to shift effectively electromagnetic radiation to form thermal gradient at cutting zone.In another replaceable embodiment, cutting technique can utilize mechanical technology to implement.In another replaceable execution mode, cutting technique can utilize acoustics technology to implement.In a replaceable execution mode, cutting can utilize the combination in any of any or above technology of above technology to cause.The example of such cutting technique can find in 563 (the common transfers) at United States Patent (USP) 6,013, it is incorporated into this is used for all purposes.Certainly, can there be other variations, replacement and change.
In a preferred implementation, the present invention utilizes high energy light source such as lasing light emitter to cause cutting.In an embodiment, thereby lasing light emitter can be near the institute's favored area in cutting zone and/or the cutting zone to cause thermal gradient or further to cause thermal gradient to cause the cutting behavior.According to an embodiment, laser can be pulse and/or the flash of light and/or at area of space.Only as an example, laser can be Q--Switched Nd-YAG laser, and it is operated at basic 1064nm wavelength, as by being called Newport Corporation, and Irvine, the HIPPO-106QW that the company of California makes.Also can use the laser aid of other types such as carbon monoxide (CO), carbon dioxide (CO 2), the electronic laser and the dye laser of Nd-YLF, free electron.According to this execution mode, be considered to favourable in a advantage, because EOR damage field and cut surface hydrogen concentration can be that nearly belt edge wavelength ratio is had more adsorptivity to the body material near the optical maser wavelength of object tape marginal operation.In an embodiment, this will have the effect that increases heat contents (for example, peak temperature and thermal gradient) in the cut surface zone.
In an embodiment, Nd-YAG 1064nm wavelength is a kind of to the such optical maser wavelength selection of silicon.In another embodiment, 20C absorption constant (α, the cm in 5-10 ohm-cm crystallization monocrystalline silicon that the P-type mixes -1) be about 50cm -1, and the EOR absorption constant that is used to inject the peak can increase to 1000-10,000cm -1Or it is bigger.According to a preferred implementation, this will allow most of laser energies to be deposited in the cutting zone.Other wavelength can demonstrate similar absorption selectivity.Be transferred to specific EOR chemical bond absworption peak (for example, as the hydrogen relative keys absorption band in the silicon at about 1800-220cm -1) the part specific wavelength also can advantageously be used for laser energy absorption in the optimization cut surface zone.Such laser can be no electronic laser, and its Si-H key that can for example be transferred to about 4.8 μ m absorbs.Certainly, can there be other variations, change and replacement.
In an embodiment, the inventive method can be implemented other technologies.For example, this method can place the thickness that separates material on the processed thereafter strutting piece.In addition or alternatively, this method makes surf zone implement one or more technologies before standing more than first high energy particle on Semiconductor substrate.According to this execution mode, these technologies can be used for forming photocell, integrated circuit, optical device, these combination in any or the like.Certainly, can there be other variations, change and replacement.
In a replaceable embodiment, a kind of replacement method of the free-standing thickness that is used to utilize one or more Semiconductor substrate to come manufactured materials is provided as follows:
1. the semiconductor with surf zone and thickness is provided;
2. make the surf zone of Semiconductor substrate stand a plurality of high energy particles of first one patterned that utilize linear accelerator to produce, this more than first high energy particle provides with first angle that the direction by more than first high energy particle and surf zone limits;
3. form the one patterned zone at a plurality of absorptions position in cutting zone, it is provided at the surf zone below and treats the separately thickness of material with qualification, and cutting zone is maintained at first temperature simultaneously;
4. alternatively, implementing Technology for Heating Processing on the Semiconductor substrate further in cutting zone, to form a plurality of absorptions position of one patterned;
5. make the surf zone of Semiconductor substrate stand more than second high energy particle that utilizes this linear accelerator to produce, this more than second high energy particle provides with second angle that the direction by more than second high energy particle and surf zone limits;
6. the stress level of cutting zone is increased to second stress level from more than second high energy particle from first stress level, Semiconductor substrate is maintained at second temperature simultaneously;
7. the thickness that utilizes cutting technique to make can to separate material is independent, and it is freestanding, can separate material simultaneously and be covered with strutting piece or analog on not;
8. the thickness that will separate material places on the strutting piece;
9. on the thickness that separates material, implement one or more technologies;
10. alternatively, on Semiconductor substrate, implement one or more technologies before at more than first high energy particle that surf zone is stood in the step (2); And
11. implement other steps as required.
The step of above order provides according to a kind of linear accelerator and one patterned utilized of one embodiment of the present invention injects the method that forms substrate.Go out as shown, this method comprises utilizes altogether injection technology removing the film of material, and it is preferably thick in freestanding.Other replacement methods also can provide, and wherein can increase step, can remove one or more steps, perhaps provide one or more steps with different order and do not deviate from the scope of the application's claim.The further details of the inventive method can more specifically be to find hereinafter in the whole text at this specification.
Fig. 9-the 15th simplifies diagrammatic sketch, understands that for example the thick layer transfer process that utilizes of the replaceable execution mode according to the present invention forms the replacement method of substrate.These diagrammatic sketch only are examples, and it should exceedingly not limit the scope of claim described herein.Those of ordinary skill in the art will recognize many variations, change and replacement.As shown in the figure, this method begins by the Semiconductor substrate with surf zone 901, the back side 903 and thickness is provided.Such thickness can be whole ingot casting or from the section of bigger ingot casting etc. (thickness).In an embodiment, Semiconductor substrate can be silicon single crystal wafer, polysilicon mold sheet, brick shape thing or substrate, SiGe wafer, germanium wafer, III/V family material, II/VI family material, carborundum, gallium nitride etc.In a preferred implementation, substrate can be a light-sensitive material.Certainly, can there be other variations, change and replacement.
With reference to Figure 10, this method comprises that the surf zone that makes Semiconductor substrate stands more than first high energy particle 1001 that utilizes linear accelerator to produce.In an embodiment, these particles cause forming a plurality of absorptions position and accumulation region in cutting zone 1101, and it is provided at the surf zone below and treats the separately thickness of material 1105 with qualification, shown in the simplification diagrammatic sketch of Figure 11.Preferably, more than first high energy particle injection distribution with Cmax and space are provided is arranged on the substrate in the Semiconductor substrate degree of depth.Preferably, this substrate can have about 2Rp and littler width.In a preferred implementation, cutting zone is maintained at first temperature 1105, and it can be provided directly or indirectly.That is to say that according to an embodiment, this temperature can be provided by the combination of convection current, conduction, radiation or these technology.In an embodiment, this temperature before the portion of time that particle is introduced into, afterwards or even utilizing fast thermal process to be provided during this period.Rapid hot technics can be the combination of uniform irradiation or one patterned or these technology.Only as an example, can provide the optimum stress distribution of rapid hot technics with realization substituted for silicon atom in injecting ends of range layer (these stress be maximized but the selection of rapid hot technics condition does not have overheated this layer to allow hydrogen and escape and to reduce to draw and render a service) herein.For purpose of the present invention, the overheated combination that is meant a kind of temperature and time, it makes draws the progressive process of layer best effective force.Certainly, can there be other variations, change and replacement.
Additionally, energetic particle beam also can provide a part of heat energy and unite the external temperature source to realize the implantation temperature of expectation.In one embodiment, energetic particle beam can provide the whole heat energy that are used to inject of expectation separately.That is to say, can provide this energetic particle beam to change into heat energy, thereby increase substrate temperature directly to make energy.In an embodiment, these particles change into heat energy substrate temperature is increased to amount predetermined or expectation with kinetic energy.Certainly, can there be other variations, change and replacement.
According to application,, usually select more in a small amount particle to be used for reducing and reduce possibility the infringement of material area for the energy requirement of the desired depth that is injected into material according to a preferred implementation.That is to say that more Xiao Liang particle is easy to be sent to the selected degree of depth and do not damage the material area that this particle passes through basically by backing material.For example, particle (or high energy particle) more in a small amount can almost be electrically charged arbitrarily (for example, plus or minus) and/or neutral atom or molecule or electronics or the like.In an embodiment, particle can be neutral or electrically charged particle comprises ion such as hydrogen and isotopic ion, noble gas ion such as helium and isotope thereof and neon or according to other ion of this execution mode.Particle also can derive from compound such as gas for example hydrogen, steam, methane and hydrogen compound, and other light atom amount particle.Replacedly, particle can be any combination of above particle and/or ion and/or molecular substance and/or atom species.These particles have enough kinetic energy usually to pass the selected degree of depth of surface arrival in this lower face.
Utilize hydrogen as being injected into material in the silicon wafer as an example, injection technology utilizes the condition of specific setting to implement.The scope of implantation dosage is about 1 * 10 15To about 1 * 10 16Individual atom/cm 2, preferably, this dosage is less than about 5 * 10 16Individual atom/cm 2Inject energy range for about 1MeV and bigger, be used to form for the useful thick film of photovoltaic applications to about 2MeV and bigger.The scope of implantation temperature is-50 ℃ to+50 ℃ approximately approximately, and be preferably lower than about 450 ℃ to prevent that hydrogen ion from propagating into the outer possibility of silicon wafer of injection.Hydrogen ion can optionally be incorporated into this silicon wafer to the selected degree of depth with about ± 0.03 to ± 1.5 micron precision.Certainly, the ionic type of use and process conditions depend on application.
For higher injection energy, what be particularly useful is to have a pure basically protonation (for example positively charged or negative electrical charge), to allow to be used for the cut surface of maximum magnitude in can be again with substrate.Utilize silicon as an example, the energy range of injection can be sizable and stride several keV (wherein needing an epitaxial growth subsequently to render a service with the maximization light absorption) of forming from the template that is used for the photoelectric absorption device to many MeV that are created in as the substrate of hundreds of micron measured on the solar cell wafer parent material thickness.For example can utilize SRIM2003 (Stopping Range In Matter) or Monte Carlo simulation program (http://www.srim.org/) to calculate as the general range of the injection degree of depth of the function that injects energy.In a concrete execution mode, the scope of utilizing the protonation energy for about 2MeV to about 5MeV, the scope of silicon film thickness is about 50 microns to about 200 microns.Certainly, can there be other variation, change and replacement.
In an embodiment, thickness range be about 50 μ m to the silicon fiml of about 200 μ m can utilize have energy range for about 2.1MeV extremely the protonation of about 5MeV form.The silicon film thickness of this scope allows separately to can be used as the thickness of the monocrystalline substrate equivalent of free-standing silicon substrate.Thickness range is 50 μ m can be used for substituting the sawing, etching and the glossing that utilize wafer to the monocrystalline substrate of about 200 μ m a present method.As overcoming about 50% kerf loss in the present technology (kerf loss be defined in cutting and become the wafer operating process in material unaccounted-for (MUF)), injecting cutting technique does not in fact have kerf loss, causes the raising of substantial cost savings and material use efficient.The energy that is higher than 5MeV can be used for preparing the replacement backing material of semiconductor machining, but in solar cell was made, the silicon solar cell material thickness expectation that forms for big silicon solar cell was 200 μ m or littler.Therefore, thicker silicon substrate is not commercial especially favourable for making solar cell according to an embodiment.
As an example, the injection condition of MeV scope is by Reutov et al. (V.F.Reutov and Sh.Sh.Ibragimov, " Method for Fabricating Thin SiliconWafers ", USSR ' s Inventors Certificate No.1282757, December 30,1983) disclose, it is hereby expressly incorporated by reference.In V.G.Reutov and Sh.Sh.Ibragimov, disclosed utilize up to the 7MeV proton in injection process optional heating and inject after can heat the separately silicon wafer thickness that produces up to 350 μ m with substrate again.Utilize 1MeV hydrogen to inject, the thermal cutting of 16 microns silicon fimls is also by M.K.Weldon﹠amp; Al., " On the Mechanism of Hydrogen-Induced Exfoliation of Silicon ", J.Vac.Sci.Technol., B 15 (4), and Jul/Aug 1997 discloses, and it is hereby expressly incorporated by reference.In this article, term " separates " or " silicon thickness of transfer " is meant, can be released into free-standing state or be released into permanent substrate or the interim substrate that is used for finally being used as free-standing substrate by the silicon film thickness that injects particle range formation, or finally be fixed on the permanent substrate.In a preferred implementation, silicon materials are enough thick and do not serve as the handle substrate (or handle substrate) of strutting piece.Certainly, the special process that is used to handle and process this film will depend on concrete technology and application.
In an embodiment, the one patterned of the inventive method enforcement first and/or more than second particle is injected.Go out as shown, after one patterned is injected, institute's favored area will have the impurity of high dose more to help causing the cutting behavior.That is to say that institute's favored area is selected with in the periphery 1201 that is in substrate in this example, shown in Figure 12 (A).In an embodiment, more high dose can be 2-5 * 10 16Cm -2And more the scope of low dosage can be about 0.5-2 * 10 16Cm -2Lower.In an embodiment, one patterned is injected with the fringe region shown in the space mode edge and is provided.Replacedly, one patterned is injected can be along the z-direction, and it also is illustrated.Certainly, can there be other variations, change and replacement.
Referring now to Figure 12 (B), this method is implemented Technology for Heating Processing 1203 on Semiconductor substrate, further to form a plurality of absorptions position in cutting zone.That is to say that this Technology for Heating Processing annealing and/or cancellation cutting zone are in position to fix more than 1201 first particle.Heat treatment provides can serve as the fixed network of defective that is used for drawing and gathering in subsequently injection technology the active component of particle.In an embodiment, the temperature of increase be considered to facilitate permanent defects network and can be from more than first the most hydrogen of particle trapping.Defect layer (it is permanent basically) provides from subsequently injection and/or diffusion technology is effectively collected and the position of trapped particle, and this will especially hereinafter be described in detail in the whole text at this specification.In a preferred implementation, heat treatment can utilize the combination in any of conduction, convection current, radiation or these technology to take place.Energetic particle beam can also provide the heat energy of a part and unite the external temperature source to realize the implantation temperature of expectation.In one embodiment, energetic particle beam can provide separately and inject required whole heat energy.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises that the surf zone that makes Semiconductor substrate stands second high energy particle that utilizes linear accelerator to produce, shown in the simplification diagrammatic sketch of Figure 13.As shown in the figure, this method comprises more than second high energy particle 1305, and it is provided in the Semiconductor substrate.Second particle is introduced in the cutting zone 1307, and it increases to second stress level from second high energy particle with the stress level of cutting zone from first stress level.In an embodiment, second stress level is suitable for cutting technique subsequently.In a preferred implementation, Semiconductor substrate is maintained at second temperature 1301, and it is higher than first temperature.
Utilize hydrogen as being injected into material in the silicon wafer as an example, injection technology utilizes the condition of specific setting to be implemented.The scope of implantation dosage is about 5 * 10 15To about 5 * 10 16Individual atom/cm 2, and more preferably this dosage is less than about 1-5 * 10 17Individual atom/cm 21 scope of injecting energy is used to form for the useful thick film of photovoltaic applications for about 1MeV and bigger to about 2MeV and bigger.The injectant dose rate can about 500 microamperes to about 50 milliamperes provides, and the accumulated dose rate can be by calculating at expanding beam zone upper integral injection rate.The scope of implantation temperature is-50 ℃ to about 550 ℃ approximately, and is preferably greater than about 400 ℃.Hydrogen ion is optionally to make an appointment with ± 0.03 to ± 1.5 micron precision to be introduced in the silicon wafer to the selected degree of depth.In an embodiment, select this temperature and dosage to allow effectively catching of molecular hydrogen, can there be the part diffusion of mon-H simultaneously.Certainly, the ionic type of use and process conditions depend on application.
For above-mentioned higher injection energy, what be particularly useful is to have pure basically protonation (for example, positively charged or negative electrical charge), to allow at the cut surface that can use the maximum magnitude in the substrate again.Utilize silicon as an example, the energy range of injection can be sizable and stride several keV of forming from the template that is used for the photoelectric absorption device (wherein allow to be used for subsequently epitaxial growth with the maximization efficiency of light absorption) at a plurality of MeV that produce the substrate of measured hundreds of micron as the thickness of solar cell wafer parent material.As the common scope of the injection degree of depth of the function that injects energy for example can utilize SRIM 2003 (Stopping Range In Matter) or Monte Carlo simulation program ( Http:// www.srim.org/) calculated.In an embodiment, the scope of silicon film thickness is about 50 microns to about 100 microns or bigger, and for example about 200 microns, the scope of the protonation energy of utilization is about 2MeV about 5MeV extremely.Certainly, can there be other variations, change and replacement.
Effectively, injecting particle increases stress or reduces energy to failure along the plane of the top surface that is parallel to substrate at selected degree of depth place.This energy (partly) depends on injected material and condition.These particles reduce the energy to fracture level of substrate at selected degree of depth place.This permission is carried out controlled cutting at selected degree of depth place along injection plane.Injection can take place under such condition, so that be not enough to cause non-reversible fracture (that is, separate or cutting) at the energy state of the substrate at all interior location places in backing material.Yet, should be noted that injection causes a certain amount of defective (for example, microdefect) at substrate usually, it can pass through for example thermal annealing or rapid thermal annealing reparation of heat treatment subsequently usually at least in part.
In an embodiment, the high energy method for implanting that the inventive method utilizes quality to select, it has suitable beam intensity.In order to save cost, injecting line should be at H +Or H -On tens milliamperes the order of magnitude of ion beam current (if high like this energy, H can inject in system 2 +Ion also can advantageously be used to realize more high dose rate).Such equipment has become recently and can obtain by utilizing radio frequency four utmost point linear accelerators (RFQ-Linac) or drift tube linear accelerator (DTL) or RF-to focus on interdigitated (RFI) technology.These are from company such as Accsys Technology Inc.of Pleasanton, California, and LinacSystems, LLC of Albuquerque, NM 87109 and other companies can obtain.
In an embodiment, the RF of the proton beam that these method utilizations are extracted quickens to increase to 0.5-7MeV or bigger with the scope with the gross energy of proton beam from about 20-100keV.The output bundle general diameter is at several millimeters the order of magnitude, and will need to utilize bundle to extend to the order of magnitude of hundreds of millimeter for the use in this application, on side,, become too big and might overheated or damage target surface so that avoid impinging upon power flow on the target surface to one meter or bigger.Can be for the proton stream that this technology can be used up to 100mA or bigger.As an embodiment, suppose the beam power of 100kW, 3.25MeV RFQ/RFI-Linac will produce the proton beam of about 31mA.Utilize about 1 * 10 16H/cm 2Dosage and the expanding beam of about 500mm * 500mm, area hourly is that about 7 square metres of while power flows are retained as about 13 watts/cm 2This combination of parameter makes this method especially practical for cost-effective manufacture of solar cells.In addition, electromagnetic beam scanning can advantageously be utilized with control available beam properties of flow.Certainly, can there be other variations, replacement and change.
In an embodiment, more than second particle also can utilize the combination in any of injecting and/or spreading to be introduced.In an embodiment, more than second particle can utilize the other technologies beyond described any high energy injection technique and this specification to be provided.Such technology (among other technologies) can comprise that ion is bathed, the plasma immersion ion injects and other plasma-treating technologies.Replacedly, some low energy technology comprises that diffusion can be used to more than second particle is incorporated in the absorption position.Only as an example, hydrogen and/or other particles can utilize actuating force such as convection current, conduction and/or radiation and/or these combination in any to be diffused into and draw in the position.According to this execution mode, such actuating force can be hot, machinery, chemistry and/or other types.Only as an example, more than second such particle can utilize the plasma hydrogenation under the goal condition that is heated or utilize electrolysis (hydrogenated liquid) mode to be introduced.Replacedly, a plurality of particles can utilize according to the injection of an embodiment and/or the combination of diffusion and be introduced.Certainly, can there be other variations, change and replacement.
Alternatively, this method is included in according to the Technology for Heating Processing after the injection technology of an embodiment.In an embodiment, the inventive method for silicon materials utilize scope about 450 ℃ to about 600 ℃ thermal process.In a preferred implementation, heat treatment can utilize the combination in any of conduction, convection current, radiation and these technology to take place.In an embodiment, temperature can utilize before the portion of time that particle is introduced into, afterwards or utilize rapid hot technics to provide during it.Rapid hot technics can be combinations uniform irradiation or one patterned or these technology.Only as an example, rapid hot technics can provide be used for being implemented in inject the ends of range layer (herein stress be maximized but wherein the selection of rapid hot technics do not have overheated this layer to allow hydrogen and escape and to reduce to draw and render a service) the optimum stress distribution of interior substituted for silicon atom.For purpose of the present invention, the overheated combination that is meant a temperature and time, it makes draws the progressive point through best effectiveness of layer.Certainly, can there be other variations, change and replacement.
In an embodiment, energetic particle beam also can provide partial heat energy and unite the external temperature source and the implantation temperature realizing expecting.In one embodiment, energetic particle beam can provide whole heat energy that need be used to inject separately.In a preferred implementation, treatment process takes place so that cutting zone is suitable for cutting technique subsequently.Certainly, can there be other variations, change and replacement.
In an embodiment, Semiconductor substrate can be set on the pallet apparatus 1401, as shown in figure 14.The a plurality of high energy particles 1403 that produce in linear accelerator 1404 are introduced in the surf zone 1405 of Semiconductor substrate 1407.Figure 14 also show the reference sphere coordinate system (ρ,
Figure 2008100091490_2
, θ).The z-axle is perpendicular to the surf zone of Semiconductor substrate, and it defines the x-y face of Cartesian coordinates.The initial point of reference sphere coordinate and Cartesian coordinate is the inlet point 1409 of a plurality of high energy particles on the surf zone of substrate.Distance from the outlet 1411 of a plurality of high energy particles of linear accelerator to initial point defines the radial distance ρ the spherical coordinates.Also show from the azimuth angle theta of positive x-axle.Zenith angle between a plurality of high energy particles and z-axle
Figure 2008100091490_3
Limit implant angle.In an embodiment, pallet apparatus is configured to allow to be used for suitable implant angle.Particularly, pallet apparatus can utilize two preset names and can be selected by the control device (for example computer) according to embodiment.Certainly, can there be other variations, change and replacement.
Mention the inventive method of the free-standing thickness that forms material once more, more than first high energy particle can provide with first implant angle.First implant angle can be spent with about 0 to about 30 to be provided.Near the high density network at the absorption position during such implant angle scope allows with the cut surface in the thickness of the Semiconductor substrate of an embodiment.This angle also can be selected to minimize or replacedly to select a passage injecting scheme, itself and the goal congruence (consistent) that realizes best absorption position layer.More than second high energy particle can provide with second implant angle.Provide second implant angle to allow the passage and the depth distribution of this more than second high energy particle of coupling, to cause the optimum stress level near the crystal plane cutting zone.In an embodiment, the scope of second implant angle can be about 0 to about 15 degree.In a replaceable execution mode, the scope of second implant angle can be about 0 to spending less than 8 approximately.Certainly, the implant angle of use depends on application, person of skill in the art will appreciate that many variations, change and replacement.
In an embodiment, the one patterned of the inventive method enforcement first and/or more than second particle is injected.After injecting more than second particle, institute's favored area will have the impurity of high dose more to help causing the cutting behavior.That is to say that institute's favored area is selected to be in the periphery of substrate in an embodiment.In an embodiment, more high dose can be 2-5 * 10 16Cm -2And more the scope of low dosage can be about 0.5-2 * 10 16Cm -2Lower.In an embodiment, one patterned is injected with the fringe region shown in the space mode edge and is provided.Replacedly, one patterned is injected can be along the z-direction, and it also is illustrated.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises the thickness independent step of utilizing cutting technique to make can to separate material along injection face 1,504 1502, and it is freestanding, as shown in figure 15, this can separate material and covers strutting piece or analog on not simultaneously, also as shown in figure 15.As shown in the figure, can separate material 1501 removes from remaining substrate part 1505.In an embodiment, independent step can utilize controlled cutting technique to implement.Controlled cutting technique provides selected energy in the part of the cutting zone of donor substrate.Only as an example, controlled cutting technique has been described in the United States Patent (USP) 6,013 of title for " controlled cutting technique ", in 563, it transfers Silicon Genesis Corporationof San Jose jointly, and California is incorporated into this with it and is used for all purposes.Go out as shown, this method makes the thickness of material from the independent thickness with complete this material of removal of substrate.Certainly, can there be other variations, replacement and change.
In an embodiment, the inventive method can be implemented other technologies.For example, this method can place the thickness that separates material on the strutting piece, and it was processed afterwards.In addition or alternatively, this method makes surf zone implement one or more technologies before standing more than first high energy particle on Semiconductor substrate.According to this execution mode, these technologies can be used for forming photocell, integrated circuit, optical device, these combination in any or the like.Certainly, can there be other variations, change and replacement.
In another replaceable embodiment, a kind of replacement method of the free-standing thickness that is used to utilize one or more Semiconductor substrate to come manufactured materials is provided as follows:
1. the semiconductor with surf zone and thickness is provided;
2. make the surf zone of Semiconductor substrate stand a plurality of high energy particles of first one patterned that utilize linear accelerator to produce, this more than first high energy particle is provided with first angle that the direction by more than first high energy particle and surf zone limits;
3. form the one patterned zone at a plurality of absorptions position in cutting zone, it is provided at the surf zone below and treats the separately thickness of material with qualification, and cutting zone is maintained at first temperature simultaneously;
4. alternatively, implementing Technology for Heating Processing on the Semiconductor substrate further in cutting zone, to form a plurality of absorptions position of one patterned;
5. make the surf zone of Semiconductor substrate stand more than second high energy particle that utilizes this linear accelerator to produce, this more than second high energy particle is provided with second angle that the direction by more than second high energy particle and surf zone limits;
6. the stress level of cutting zone is increased to second stress level from more than second high energy particle from first stress level, Semiconductor substrate is maintained at second temperature simultaneously;
7. the thickness that utilizes cutting technique to make can to separate material is independent, it is freestanding, material be can separate simultaneously and strutting piece or analog covered on not, and the stress material of remainder (for example, inject the material that damaged material, injection material, hydrogen are injected) still be connected in this thickness of material, even after this thickness of material has been separated;
8. the separately thickness of material is provided, and it is freestanding, and is being deformed in shape;
9. handle this and separate material to remove the part of any residual stress material;
10. produce the thickness on the plane basically of material, it is being flat and the stress material of this part not basically in shape;
11. will separate the thickness of material places on the strutting piece;
12. separate at this and to implement one or more technologies on thickness of material;
13. alternatively, on Semiconductor substrate, implement one or more technologies before at more than first high energy particle that surf zone is stood in the step (2); And
14. implement other steps as required.
The step of above order provides according to a kind of linear accelerator and one patterned utilized of one embodiment of the present invention injects the method that forms substrate.Go out as shown, this method comprises utilizes altogether injection technology removing the film of material, and it is preferably thick in freestanding.Other replacement methods also can provide, and wherein can increase step, can remove one or more steps, perhaps provide one or more steps with different order and do not deviate from the scope of this paper claim.The further details of the inventive method can more specifically be to find hereinafter in the whole text at this specification.
Figure 16-the 20th simplifies diagrammatic sketch, understands that for example the thick layer transfer process that utilizes of a replaceable execution mode of basic invention forms the replacement method of substrate.These diagrammatic sketch only are examples, and it should exceedingly not limit the scope of claim described herein.Those of ordinary skill in the art will recognize many variations, change and replacement.As shown in the figure, this method have surf zone 1602 by providing, 1600 beginnings of the Semiconductor substrate of the back side 1603 and thickness 1604.Such thickness can be whole ingot casting or from the thickness of the section of bigger ingot casting etc.In an embodiment, Semiconductor substrate can be silicon single crystal wafer, polysilicon mold sheet, ceramic tile or substrate, SiGe wafer, germanium wafer, III/V family material, II/VI family material, carborundum, gallium nitride etc.In a preferred implementation, substrate can be a light-sensitive material.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises that the surf zone that makes Semiconductor substrate stands more than first high energy particle that utilizes linear accelerator to produce.In an embodiment, these particles cause in cutting zone 1601 forming a plurality of absorptions position or accumulation region, and it is provided at 1607 the thickness that the surf zone below treats separately just to come with qualification, shown in the simplification diagrammatic sketch of Figure 16.Preferably, more than first high energy particle injection distribution with Cmax and space are provided is arranged on the substrate in the Semiconductor substrate degree of depth.Preferably, this substrate can have about 2Rp and littler width.In a preferred implementation, cutting zone is maintained at first temperature, and it can be provided directly or indirectly.That is to say that according to an embodiment, this temperature can be provided by the combination of convection current, conduction, radiation or these technology.In an embodiment, this temperature before the portion of time that particle is introduced into, afterwards or even utilizing rapid hot technics to be provided during this period.Rapid hot technics can be the combination of uniform irradiation or one patterned or these technology.Only as an example, rapid hot technics can be provided to the optimum stress distribution of realization substituted for silicon atom in injecting ends of range layer (wherein these stress be maximized but the selection of rapid hot technics condition does not have overheated this layer to allow hydrogen and escape and to reduce to draw and render a service).For purpose of the present invention, the overheated combination that is meant a kind of temperature and time, it makes draws the progressive process of layer best effective force.Certainly, can there be other variations, change and replacement.
Additionally, energetic particle beam also can provide a part of heat energy and unite the external temperature source to realize the implantation temperature of expectation.In one embodiment, energetic particle beam can provide whole heat energy that expectation is used to inject separately.That is to say, can provide this energetic particle beam to change into heat energy, thereby increase substrate temperature directly to make energy.In an embodiment, these particles change into heat energy substrate temperature is increased to amount predetermined or expectation with kinetic energy.Certainly, can there be other variations, change and replacement.
According to application,, usually select more in a small amount particle to be used for reducing and reduce possibility the infringement of material area for the energy requirement of the desired depth that is injected into material according to a preferred implementation.That is to say that more Xiao Liang particle is easy to be sent to the selected degree of depth and do not damage the material area that this particle passes through basically by backing material.For example, particle (or high energy particle) more in a small amount can almost be charged arbitrarily (for example, plus or minus) and/or neutral atom or molecule or electronics or the like.In an embodiment, particle can be neutral or electrically charged particle comprises ion such as hydrogen and isotopic ion, noble gas ion such as helium and isotope thereof and neon or according to other ion of this execution mode.Particle also can derive from compound such as gas for example hydrogen, steam, methane and hydrogen compound, and other light atom amount particle.Replacedly, particle can be any combination of above particle and/or ion and/or molecular substance and/or atom species.These particles have enough kinetic energy usually to pass the selected degree of depth of surface arrival in this lower face.
Being injected in the silicon wafer as injected material with hydrogen is example, and the condition of injection technology specific settings is implemented.The scope of implantation dosage is about 1 * 10 15～about 1 * 10 16Individual atom/cm 2, preferred dose is lower than about 5 * 10 16Individual atom/cm 2The scope of injecting energy for about 1MeV to being higher than about 2MeV, and be higher than the thick film formation injection energy that is used for photovoltaic applications.The implantation temperature scope is for-50～+ 50 ℃ approximately, preferably less than about 450 ℃, to reduce hydrogen ion from injecting the possibility (probability) that silicon wafer diffuses out.Hydrogen ion optionally is introduced in the selected degree of depth in the silicon wafer with about ± 0.03～± 1.5 micron precision.Certainly, used ionic type and process conditions depend on its application.
For higher injection energy, what be particularly useful is to adopt pure substantially protonation (for example with plus or minus) to allow to use the maximum magnitude of cut surface in the substrate again.Utilize silicon as an example, injecting the scope of energy can be quite big and stride several keV that the template that is used for photoelectric absorption device (wherein needing an epitaxial growth subsequently to render a service with the maximization light absorption) forms to the many MeV that are created in as the substrate of hundreds of micron measured on the solar cell wafer parent material thickness.For example can utilize SRIM2003 (Stopping Range In Matter) or Monte Carlo simulation program (http://www.srim.org/) to calculate as the general range of the injection degree of depth of the function that injects energy.In a concrete execution mode, the scope of utilizing the protonation energy for about 2MeV to about 5MeV, the scope of silicon film thickness is about 50 microns to about 200 microns.Certainly, can there be other variation, change and replacement.
In an embodiment, thickness range be about 50 μ m to the silicon fiml of about 200 μ m can utilize have energy range for about 2.1MeV extremely the protonation of about 5MeV form.The silicon film thickness of this scope allows separately to can be used as the thickness of the monocrystalline substrate equivalent of free-standing silicon substrate.To be 50 μ m can be used for substituting the present method of utilizing chip sawing, etching and glossing to the monocrystalline substrate of about 200 μ m to thickness range.As overcoming about 50% kerf loss in the present technology (kerf loss be defined in cutting and become the wafer operating process in material unaccounted-for (MUF)), injecting cutting technique does not in fact have kerf loss, causes the raising of substantial cost savings and material use efficient.The energy that is higher than 5MeV can be used for preparing semiconductor machining and replace backing material, but in solar cell was made, the silicon solar cell material thickness expectation that forms for big silicon solar cell was 200 μ m or littler.Therefore, thicker silicon substrate is not commercial especially favourable for making solar cell according to an embodiment.
As an example, the injection condition of MeV scope is by Reutov et al. (V.F.Reutov and Sh.Sh.Ibragimov, " Method for Fabricating Thin SiliconWafers ", USSR ' s Inventors Certificate No.1282757, December 30,1983) disclose, it is hereby expressly incorporated by reference.In V.G.Reutov and Sh.Sh.Ibragimov, disclosed utilize up to the 7MeV proton in injection process optional heating and inject after can produce separately silicon wafer thickness again with the substrate heating up to 350 μ m.Utilize 1MeV hydrogen to inject, the thermal cutting of 16 microns silicon fimls is also by M.K.Weldon﹠amp; Al., " On the Mechanism of Hydrogen-Induced Exfoliation of Silicon ", J.Vac.Sci.Technol., B 15 (4), and Jul/Aug 1997 discloses, and it is hereby expressly incorporated by reference.In this article, term " separates " or " silicon thickness of transfer " is meant, can be released into free-standing state or be released into permanent substrate or the interim substrate that is used for finally being used as free-standing substrate by the silicon film thickness that injects particle range formation, or finally be fixed on the permanent substrate.In a preferred implementation, silicon materials are enough thick and do not have handle substrate (or handle substrate), and it serves as strutting piece.Certainly, the special process that is used to handle and process this film will depend on concrete technology and application.
In an embodiment, the one patterned of the inventive method enforcement first and/or more than second particle is injected.After more than second particle injects, institute's favored area will have the impurity of high dose more to help causing the cutting behavior.That is to say that institute's favored area is selected with in the periphery that is in substrate in one embodiment.In an embodiment, more high dose can be 2-5 * 10 16Cm -2And more the scope of low dosage can be about 0.5-2 * 10 16Cm -2Lower.In an embodiment, one patterned is injected with the fringe region shown in the space mode edge and is provided.Replacedly, one patterned is injected can be along the z-direction, and it also is illustrated.Certainly, can there be other variations, change and replacement.
Some execution mode of the present invention can adopt one or more pattered region to promote to cause the cutting behavior.Such scheme can comprise that the surf zone that makes Semiconductor substrate stands more than first high energy particle that is produced by linear accelerator, to form the one patterned zone at a plurality of absorptions position in cutting zone.In an execution mode of the method according to this invention, cutting zone is positioned under the surf zone to limit the thickness of material to be separated.Semiconductor substrate remains on first temperature.This method also comprises the processing procedure of surf zone experience that makes Semiconductor substrate, as heat treatment.This method comprises that the surf zone that makes Semiconductor substrate experiences a plurality of second high energy particles, provides these particles to make the stress level of cutting zone be increased to the second level from the first order.Thereby this method is included in and causes cutting action in the selection area of pattered region and utilize cutting technique with a part of thickness of separating detachable material and utilize cutting technique to make the thickness independent (release) of detachable material.Such patterning injecting program makes surface experience dosage change, and wherein initiation area normally utilizes high dose and/or hot stack sequence (thermal budget sequence) to form.Continuity cutting behavior can utilize following several respects to carry out to finish the cutting behavior: (i) extra dosed regions is to guide the continuity of cutting front end, and (ii) Stress Control is with the degree of depth of guiding cutting; Perhaps (iii) natural crystalline phase cutting planes.Some most of in other words zones smaller dose (even mix) that can mix, this depends on used specific cutting technique.These low dosage zones are used for can helping improving total productivity of injected system from the required overall dose of every film of substrate separation by reduction.According to a specific embodiment, increase area dose simultaneously by adopting injected beam itself, can help producing the more initiation area of high dose, heat simultaneously and prepare and be used for localization film separate areas.This being separated in during the injected beam process perhaps after the injection that utilizes the independent heat treatment step, can be finished in position.Use transducer to measure and the state of feedback initiation area, can help accurate with controlled localization film and separate, and avoid overheated or instant separating layer damage after the cutting generation.Certainly, can there be other variations, change and replacement.
Preceding for another example described, the inventive method is implemented Technology for Heating Processing on Semiconductor substrate, further to form a plurality of absorptions position in cutting zone.That is to say that this Technology for Heating Processing annealing and/or cancellation cutting zone are in position to fix a plurality of first particles.Heat treatment provides the fixed network of defective, and it can be used as the active component that is used for drawing and gathering in the combination of subsequently injection or hydrogenation or injection and/or diffusion technology particle.In an embodiment, think that the temperature that increases facilitates the network of permanent defects and catch most of hydrogen from more than first particle.This defect layer (it is permanent basically) provides and has been used for from subsequently injection and/or diffusion technology (will be described in more detail hereinafter at this specification) is effectively collected and the position of trapped particle in the whole text and more specifically.In a preferred implementation, heat treatment can utilize the combination in any of conduction, convection current, radiation or these technology that (carrying out) takes place.Energetic particle beam can also provide the heat energy of part and unite the external temperature source and the implantation temperature realizing expecting.In one embodiment, energetic particle beam can provide whole heat energy that expectation is used to inject separately.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises that the surf zone that makes Semiconductor substrate stands more than second high energy particle that utilizes linear accelerator to produce.As directed, this method comprises more than second high energy particle, and it is provided in the Semiconductor substrate.Second particle is introduced in the cutting zone, and it increases to second stress level from more than second high energy particle with the stress level of cutting zone from first stress level.In an embodiment, second stress level is suitable for cutting technique subsequently.In a preferred implementation, Semiconductor substrate is maintained at second temperature, and it is higher than first temperature.
As an example, utilize hydrogen as the material that is injected in the silicon wafer, injection technology utilizes the condition of specific setting to be implemented.The scope of implantation dosage is about 5 * 10 15To about 5 * 10 16Individual atom/cm 2, more preferably this dosage is less than about 1-5 * 10 17Individual atom/cm 2The scope of injecting energy is used to form for the useful thick film of photovoltaic applications for about 1MeV and bigger to about 2MeV and bigger.The injectant dose rate can about 500 microamperes to about 50 milliamperes provides, and the accumulated dose rate can be by calculating at expanding beam zone upper integral injection rate.The scope of implantation temperature is-50 ℃ to about 550 ℃ approximately, and is preferably greater than about 400 ℃.Hydrogen ion is optionally to make an appointment with ± 0.03 to ± 1.5 micron precision to be introduced in the silicon wafer to the selected degree of depth.In an embodiment, select this temperature and dosage to allow effectively catching of molecular hydrogen, can there be the part diffusion of mon-H simultaneously.Certainly, the ionic type of use and process conditions depend on application.
For above-mentioned higher injection energy, what be particularly useful is to have pure basically protonation (for example, positively charged or negative electrical charge), to allow at the cut surface that can use the maximum magnitude in the substrate again.Utilize silicon as an example, the energy range of injection can be sizable and stride a plurality of MeVs of several keV of forming from the template that is used for the photoelectric absorption device (wherein allow to be used for subsequently epitaxial growth with the maximization efficiency of light absorption) to the substrate of the measured hundreds of micron that produces at the thickness as the solar cell wafer parent material.As the common scope of the injection degree of depth of the function that injects energy for example can utilize SRIM 2003 (Stopping Range In Matter) or Monte Carlo simulation program ( Http:// www.srim.org/) calculated.In an embodiment, the scope of silicon film thickness is about 50 microns to about 100 microns or bigger, and for example about 200 microns, the scope of the protonation energy of utilization is about 2MeV about 5MeV extremely.Certainly, can there be other variations, change and replacement.
Effectively, injecting particle increases stress or reduces energy to failure along the plane of the top surface that is parallel to substrate at selected degree of depth place.This energy (partly) depends on injected material and condition.These particles reduce the energy to fracture level of substrate at selected degree of depth place.This permission is carried out controlled cutting at selected degree of depth place along injection plane.Injection can take place under such condition, so that be not enough to cause non-reversible fracture (that is, separate or cutting) at the energy state of the substrate at all interior location places in backing material.Yet, should be noted that and inject usually and can cause a certain amount of defective (for example, microdefect) that it can pass through for example thermal annealing or rapid thermal annealing reparation of heat treatment subsequently usually at least in part at substrate.
In an embodiment, the high energy method for implanting that method of the present invention utilizes quality to select, it has suitable beam intensity.In order to save cost, injecting line should be at H +Or H -On tens milliamperes the order of magnitude of ion beam current (if high like this energy, H can inject in system 2 +Ion also can advantageously be used to realize higher dose rate).Such equipment has become recently and can obtain by utilizing radio frequency four utmost point linear accelerators (RFQ-Linac) or drift tube linear accelerator (DTL) or RF-to focus on interdigitated (RFI) technology.These are from company such as Accsys Technology Inc.of Pleasanton, California, and LinacSystems, LLC of Albuquerque, NM 87109 and other companies can obtain.
In an embodiment, the RF of the proton beam that these method utilizations are extracted quickens to increase to 0.5-7MeV or bigger with the gross energy scope with proton beam from about 20-100keV.The output bundle general diameter is at several millimeters the order of magnitude, and will need to utilize bundle to extend to the order of magnitude of hundreds of millimeter for the use in this application, on side,, become too big and might overheated or damage target surface so that avoid impinging upon power flow on the target surface to one meter or bigger.Can be for the proton stream that this technology can be used up to 100mA or bigger.As an embodiment, suppose the beam power of 100kW, 3.25MeV RFQ/RFI-Linac will produce the proton beam of about 31mA.Utilize about 1 * 10 16H/cm 2Dosage and the expanding beam of about 500mm * 500mm, area hourly is that about 7 square metres of while power flows are retained as about 13 watts/cm 2This combination of parameter makes this method especially practical for the manufacture of solar cells of saving cost.Certainly, can there be other variations, replacement and change.
In an embodiment, more than second particle also can utilize the combination in any of injecting and/or spreading to be introduced.In an embodiment, more than second particle can utilize the other technologies beyond described any high energy injection technique and this specification to be provided.Such technology (among other technologies) can comprise that ion is bathed, the plasma immersion ion injects and other plasma-treating technologies.Replacedly, some low energy technology comprises that diffusion can be used to more than second particle is incorporated in the absorption position.Only as an example, hydrogen and/or other particles can utilize actuating force such as convection current, conduction and/or radiation and/or these combination in any to be diffused into and draw in the position.According to this execution mode, such actuating force can be hot, machinery, chemistry and/or other types.Only as an example, more than second such particle can utilize the plasma hydrogenation under the goal condition that is heated or utilize electrolysis (hydrogenated liquid) mode or other injections and/or diffusion technique to be introduced.Certainly, can there be other variations, change and replacement.
Alternatively, according to an embodiment, this method is included in the Technology for Heating Processing after the injection technology.In an embodiment, this method to silicon materials utilize scope for about 450 ℃ to about 600 ℃ thermal process.In a preferred implementation, the combination in any of heat treatment utilization conduction, convection current, radiation or these technology takes place.In an embodiment, this temperature can before the portion of time that particle is introduced into, afterwards or even during utilize rapid hot technics to be provided.This rapid hot technics can be the combination of uniform irradiation or one patterned or these technology.Only as an example, can provide rapid hot technics with inject the ends of range layer (herein stress be maximized but wherein the selection of rapid hot technics condition do not have overheated this layer to allow hydrogen and escape and to reduce and draw efficient) in the optimum stress distribution of realization substituted for silicon atom.For purpose of the present invention, overheatedly be meant the combination of temperature and time, it makes draws the progressive point by optimum efficiency of layer.Certainly, can there be other variations, change and replacement.
In an embodiment, energetic particle beam also can provide the heat energy of a part and unite the external temperature source and the implantation temperature realizing expecting.In one embodiment, energetic particle beam can provide whole heat energy that expectation is used to inject separately.In a preferred embodiment, carry out treatment process so that this cutting zone is applicable to follow-up cutting technique.Certainly, can there be other variations, change and replacement.
In an embodiment, Semiconductor substrate can be arranged on the pallet apparatus, once more as previously mentioned.The a plurality of high energy particles that produce in linear accelerator are introduced in the surf zone of Semiconductor substrate.According to execution mode, can use the reference sphere coordinate system (ρ,
Figure 2008100091490_4
, θ).The z-axle is perpendicular to the surf zone of Semiconductor substrate, and it defines the x-y face of Cartesian coordinates.The initial point of reference sphere coordinate and Cartesian coordinate is the inlet points of a plurality of high energy particles on the surf zone of substrate.Define radial distance ρ the spherical coordinates from the distance that is exported to initial point of a plurality of high energy particles of linear accelerator.Also show from the azimuth angle theta of positive x-axle.Zenith angle between a plurality of high energy particles and z-axle
Figure 2008100091490_5
Limit implant angle.In an embodiment, pallet apparatus is configured to allow to be used for suitable implant angle.Particularly, pallet apparatus can utilize two preset names and can be selected by the control device (for example computer) according to embodiment.Certainly, can there be other variations, change and replacement.
Mention the inventive method of the free-standing thickness that forms material once more, more than first high energy particle can provide with first implant angle.First implant angle can be spent with about 0 to about 30 to be provided.Near the high density network at the absorption position during such implant angle scope allows with the cut surface in the thickness of the Semiconductor substrate of an embodiment.More than second high energy particle can provide with second implant angle.Provide second implant angle to allow the passage and the depth distribution of this more than second high energy particle of coupling, to cause the stress level near the crystal plane cutting zone.In an embodiment, the scope of second implant angle can be about 0 to about 15 degree.In a replaceable execution mode, the scope of second implant angle can be about 0 to spending less than 8 approximately.Certainly, the implant angle of use depends on application, person of skill in the art will appreciate that many variations, change and replacement.
In an embodiment, the one patterned of the inventive method enforcement first and/or more than second particle is injected.After more than second particle injects, institute's favored area will have the impurity of high dose more to help causing the cutting behavior.That is to say that institute's favored area is selected with in the periphery that is in substrate in one embodiment.In an embodiment, more high dose can be 2-5 * 10 16Cm -2And more the scope of low dosage can be about 0.5-2 * 10 16Cm -2Lower.In an embodiment, one patterned is injected with the fringe region shown in the space mode edge and is provided.Replacedly, one patterned is injected can be along the z-direction, and it also is illustrated.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises thickness 1701 independent step of utilizing cutting technique to make can to separate material along injection face 1703, and it is freestanding, as shown in figure 17, this can separate strutting piece that material covers on not etc. simultaneously, also as shown in figure 17.As shown in the figure, can separate material 1705 removes from remaining substrate part 1709.In an embodiment, independent step can utilize controlled cutting technique to implement.Controlled cutting technique provides selected energy 1711,1713 in the part of the cutting zone of donor substrate.Only as an example, controlled cutting technique has been described in the United States Patent (USP) 6,013 of title for " controlled cutting technique ", 563, it transfers Silicon GenesisCorporation of San Jose jointly, and California is incorporated into this with it and is used for all purposes.Go out as shown, this method makes the thickness of material independent of to finish the removal of this material thickness from substrate.Certainly, can there be other variations, replacement and change.
In a preferred implementation, cutting utilization treats that separately the characteristic of the thickness of material takes place.That is to say, the part 1715 of stress area of thickness that keeps being connected in this material when this method comprises the thickness independent same of utilizing cutting technique to make can to separate material is so that the thickness of this material is characterised in that the shape of distortion, for example at the edge or the end regions bending.In a further execution mode, the invention provides a kind of method that forms the film of material from big (piece) Semiconductor substrate, it utilizes the intrinsic flexural property of cutting material partly to separate from remaining big (piece) substrate with promotion, as also illustrating by Figure 17.In an embodiment, this method comprises provides the Semiconductor substrate 1701 with surf zone and thickness.In the present embodiment, use identical label but should not limit the scope of this paper claim.This method comprises that the surf zone that makes Semiconductor substrate stands a plurality of particles to form cutting zone, and it is limited at the surf zone below and treats the separately thickness of material to form stress area and to limit.In an embodiment, the thickness of material has about 20 microns and bigger thickness, but can be thinner a little, as long as it is freestanding.Certainly, can there be other variations, change and replacement.
In an embodiment, this method comprises that near the selectivity energy at the area of space place in utilization is cutting zone replaces 1711,1713 and cause the separation for the treatment of the part of material thickness separately at the fringe region place of cutting zone, has the separate section of the material thickness of a stress area part with formation.In an embodiment, this method comprises from the separate section 1715 of area of space bending away from material thickness, and makes the deformed shape in the material thickness separately partly remove the thickness of this material with promotion from remaining substrate.In an embodiment, this energy can be selected from one or more sources, as for example gas, liquid or the combination of light source, lasing light emitter, thermal source, radiation source, mechanical sources, chemical source, gravity source or fluid source.In one embodiment, this liquid or gas can be that heating source or cooling source (being low temperature) are to give this film in a controlled manner with thermal stress.
In an embodiment, alternatively, this method forms the overlying strata (not shown) with further promotion crooked behavior, thereby strengthens the cutting behavior.In an embodiment, overlying strata also be subjected to stress but cause crooked behavior.According to an embodiment, such stress can be constrictive.According to an embodiment of the invention, suitable material (for example, dielectric, silicon nitride) can be used to produce compression property.After cutting, overlying strata can be removed or can remain on the surf zone.Certainly, can there be other variations, change and replacement.The further details of this method can especially hereinafter find in the whole text at this specification.
Referring now to Figure 18 and 18A, this method causes the shape 1801 of being out of shape, and it has first curved edge zone 1803 and the axle 1809 this first curved edge zone and second curved edge zone between relative with second curved edge zone 1805.In an embodiment, axle 1809 connects three fringe region 1811 relative with the 4th fringe region 1813.Shown in Figure 18 A is according to the substrate that comprises cutting zone before the cutting technique of an embodiment.As shown in the figure, each fringe region has been demarcated and corresponding to the simplified side view of Figure 18.Certainly, can there be other variations, change and replacement.
Referring now to Figure 19 and 20, this method is removed the part 1901 of the stress area that is connected in material thickness, so that this deformed shape can be removed and produce the shape 2001 on plane basically, it totally is flat or similar situation.In a preferred implementation, this method comprises that one or more technology 1903 cause this part of stress area of the thickness deformation of material with removal.In an embodiment, described removal comprises this part of etching stress area, and this makes the thickness of material have deformed shape.That is to say that etching can be optionally to remove stress area, this can be the zone of injecting affected area and/or having the hydrogen and/or the similar impurity of higher concentration.In an embodiment, etching can be wet etching and/or dry method etch technology etc.In an embodiment, described removal also can utilize the separately thickness of heat treatment material to take place, to discharge stress (stressed) zone.Replacedly, according to this execution mode, can there be etching and/or heat treated combination.Certainly, can there be other variations, change and replacement.
In an embodiment, this method can be implemented other technologies.For example, this method can place the thickness that separates material on the strutting piece, and it was processed afterwards.In addition or alternatively, this method makes surf zone implement one or more technologies before standing more than first high energy particle on Semiconductor substrate.According to this execution mode, these technologies can be used for forming photocell, integrated circuit, optical device, these combination in any or the like.Certainly, can there be other variations, change and replacement.
In an embodiment, this method utilizes electromagnetic radiation to implement the cutting of cutting zone so that the thickness of material is independent.In a preferred implementation, can use lasing light emitter.In an embodiment, lasing light emitter provides the laser treatment of cutting zone to cause the cutting of cutting zone.In another embodiment, the laser treatment of cutting zone can not cause and/or cut this cutting zone, is used for handling cutting zone increasing the stress in the cutting zone but only be provided, thereby reduces cutting temperature or dosage or these two.In addition, as mentioned above, lasing light emitter provides the line that optionally is provided on the area of space, and it allows this line by area of space and be attached to cutting zone effectively.In an embodiment, the top surface of " as cutting " can stop laser energy to be attached in the cutting zone effectively.Therefore, selected area of space may be provided on or below the side or fringe region, and it is not damaged or roughening (or roughening) because of cutting.In addition, smoothing, annealing or processing (for example deposition) can be stood in the cutting surface, enter combination in the cutting zone with improvement.Certainly, can there be other variations, change and replacement.
In other embodiments, particle can comprise deuterium (D for example +) and H 2 +As injected material.That is to say that such particle can utilize single linear accelerator technology and/or be provided according to the structure of an embodiment.In an embodiment, linear accelerator comprises beam line (beamline) structure, and it allows at least two kinds of materials to be injected into.In such execution mode, this method utilization has injection D +And H 2 +The single linear accelerator of the ability of (promptly all being 2 nuclear qualities).According to this execution mode, can there be various benefits and/or advantage.In a preferred implementation, the injection of two kinds of different materials can utilize beam line to be provided.As an example, D +Can be favourable for first injection (drawing layer forms), because D +In EOR, compare H +Producing doubly more the substituting of about 2-3 damages.This method is also utilized H 2 +As second infusion, it will be the H-injection with the twice dose rate of per unit line.
In an example, this method can comprise following scheme or order.Certainly, can there be other variations, change and replacement.
1. impact deuterium plasma and with D +Be injected into linear accelerator equipment, to quicken to be used to draw the target energy (for example, 2MeV will be about 50-60 μ m) that layer forms.
(1) and possible intermediate annealing sequence with improve draw layer after, ECR source gas is become hydrogen and impacts hydrogen plasma, with H 2 +Inject linear accelerator to quicken target energy, align with the absorption layer thereby this is gathered infusion.A kind of method will be the linear accelerator end that is activated in the technology (2), and it suitably strengthens energy.For example, H 2 +Energy must be higher than 4MeV, estimate more near 4.5-5MeV.
Certainly, can there be variation, change and replacement.
Although more than be the abundant description of embodiment, can use various changes, replace structure and equivalent.Though below utilized the step of selected order to be described, can use any key element of described step and other combination in any.In addition, according to execution mode, some step can make up and/or remove.In addition, according to replaceable execution mode, the particle of hydrogen can utilize helium and hydrionic the injection altogether to substitute to allow forming cut surface with the dosage and/or the cutting performance of change.Replacedly, also capable of being combined and/or independent use of deuterium or other similar substances work is injected material.Certainly, can there be other variations, change and replacement.Therefore, more than describe and illustrate the scope of the present invention that to regard that restriction has claims to limit as.
Embodiment
In order to confirm principle of the present invention and operation, we have implemented some experiments.These experiments only are examples, and it should excessively not limit the scope of this paper claim.Person of skill in the art will appreciate that many other variations, change, replacement.The further details of these experiments can especially hereinafter find in the whole text at this specification.
As an example, the silicon wafer sample of preparation has various orientations and impurity.In an embodiment, prepared the sample of square shape, it is＜100〉orientation and the doping of p-type.In an interchangeable execution mode, prepared round-shaped sample, it is＜111〉orientation and the doping of n-type.According to execution mode and experiment, we can utilize other variations, change and replacement.In addition, square and circle cause some characteristic but should be used for the mark purpose in this article, and should exceedingly not limit the scope of described claim.
According to an embodiment, such sample utilization tradition SC1 and SC2 chemicals clean.As an example, wafer stands a plurality of injection technologies, and it has been described in the whole text at this specification.In circular sample and square sample, utilize hydrogen particle itself to inject in some experiments, and in other experiments, utilize helium and hydrogen particle that common injection takes place.For cutting sample, use heat conduction/convection current technology, it makes the thick film of material separate as free-standing material.Certainly, can there be other variations, change and replacement.
Figure 21 for example understands from AFM (that is the atomic force microscope) photo on the cutting surface of the material of monocrystalline substrate cutting.As shown in the figure, photo 2101 is from the cutting surface of 16 μ m thickness films, and photo 2103 is from the cutting surface of 47 μ m thickness films, and photo 2105 is from the cutting surface of 117 μ m thickness films.For thicker film, the RMS roughness is higher, as shown in the figure.This expects that because form the more high-energy that thicker film needs infusion, it causes more changeableization in the cutting zone.Certainly, can there be other variations, change and replacement.The further details of these films provides as follows.
With reference to Figure 22, provide the repeatedly surface roughness on the cutting surface of cutting continuously of single crystal film.Go out as shown, provide from the surface roughness of first silicon fiml 2201 of single crystalline substrate cutting, and from the surface roughness of the back silicon fiml 2202 of residue substrate cutting.Each film has the thickness of 117 μ m.Go out as shown, substrate can be cut more than once and between each follow-up cutting not having surface treatment.According to uniformity and roughness, the surface in some embodiments can be processed after repeatedly cutting.
With reference to Figure 23, the monocrystalline silicon membrane 2301 of 15 μ m thickness cuts from shown monocrystalline substrate.This film is freestanding and shows the AFM measurement on cutting surface.Figure 24 has shown the silicon substrate that 15 μ m thickness single crystal films and this film cut from it.The free-standing films of as shown in the figure, verified cutting.Based on the stress that stands at cutting zone, the edge of the film of square configuration is bent upwards.In an example, stress can be removed by utilizing etching and/or heat treatment to remove cutting zone according to an embodiment.Certainly, can there be other variations, change and replacement.
Figure 25 shows according to the experimental result of one embodiment of the present invention from the polysilicon film of polysilicon substrate cutting.As shown in figure 25, show 20 * 20 μ m AFM photos of polysilicon substrate surface.This AFM photo illustrates the photo on the polysilicon film surface of cutting.Go out as shown, this method has shown the cutting of polysilicon film in an embodiment.Certainly, can there be other variations, change and replacement.
Although more than be the abundant description of embodiment, can use the structure and the equivalent of various changes, replacement.Though below utilized the step of selected order to be described, can use any element of described step and other combination in any.In addition, according to execution mode, some step can make up and/or remove.In addition, according to replaceable execution mode, the particle of hydrogen can utilize helium and hydrionic the injection altogether to substitute to allow forming cut surface with the dosage and/or the cutting performance of change.Replacedly, deuterium and other similar substances are as the also capable of being combined and/or independent use of injected material.As mentioned above, almost any type of energy can be used to cause and the continuity cutting, as electricity, machinery, electromagnetic radiation, gravity, chemistry, these any combination, acoustics, microwave and radio wave, lasing light emitter, uniform irradiation etc.Certainly, can there be other variations, change and replacement.Therefore, more than describe and illustrate the restriction that should not regard the scope of the present invention that claims are limited as.

Claims (72)

1. method of utilizing one or more Semiconductor substrate to come the free-standing thickness of manufactured materials comprises:
Semiconductor substrate with surf zone and thickness is provided;
Make the surf zone of described Semiconductor substrate stand more than first high energy particle that utilizes linear accelerator to produce, in cutting zone, to form the zone at a plurality of absorptions position, described cutting zone is provided at material is separately treated in described surf zone below with qualification thickness, described Semiconductor substrate is maintained at first temperature, and described more than first high energy particle is provided with first implant angle;
Make described Semiconductor substrate stand treatment process;
Make the surf zone of described Semiconductor substrate stand more than second high energy particle that utilizes described linear accelerator to produce, provide described more than second high energy particle to increase to second stress level from first stress level with stress level with described cutting zone, make described Semiconductor substrate remain on second temperature, provide described more than second high energy particle with second implant angle; And
The thickness that utilizes cutting technique to make can to separate material is independent.
2. method according to claim 1, wherein, described Semiconductor substrate comprises monocrystalline silicon.
3. method according to claim 1, wherein, described Semiconductor substrate comprises polysilicon.
4. method according to claim 1, wherein, described more than first high energy particle comprises the hydrogen material.
5. method according to claim 4, wherein, described hydrogen material is with 2 * 10 16/ cm 2Littler dosage provides.
6. method according to claim 4, wherein, described hydrogen material is with 5 * 10 15/ cm 2Littler dosage provides.
7. method according to claim 1, wherein, described more than first high energy particle comprises the helium material.
8. method according to claim 1, wherein, described Semiconductor substrate is provided on the pallet apparatus.
9. method according to claim 8, wherein, described pallet apparatus is provided for described first implant angle and second infusion.
10. method according to claim 1, wherein, described first implant angle is 0 to 30 degree.
11. method according to claim 1, wherein, described first implant angle is 0 to 25 degree.
12. method according to claim 1, wherein, described more than second high energy particle comprises the hydrogen material.
13. method according to claim 12, wherein, described hydrogen material comprises 5 * 10 16/ cm 2Littler dosage.
14. method according to claim 12, wherein, described hydrogen material comprises 5 * 10 15/ cm 2Littler dosage.
15. method according to claim 1, wherein, described more than second high energy particle comprises the helium material that derives from remote plasma system or the combination of helium material and hydrogen material
16. method according to claim 1, wherein, described second implant angle is 0 to 15 degree.
17. method according to claim 1, wherein, described second implant angle is 0 to 7 degree.
18. method according to claim 1, wherein, described linear accelerator comprises radio frequency four utmost points (RFQ).
19. method according to claim 1, wherein, described linear accelerator comprises drift tube linear accelerator (DTL).
20. method according to claim 1, wherein, described linear accelerator comprises that RF-focuses on interdigitated linear accelerator (RFI).
21. method according to claim 1, wherein, described more than first high energy particle is that the energy of 1MeV to 5MeV provides with the scope.
22. method according to claim 1, wherein, described absorption position is included near the interior microscopic defect zone of described cutting zone.
23. method according to claim 22, wherein, a plurality of holes that provide between some crystal face of described Semiconductor substrate are provided in described microscopic defect zone.
24. method according to claim 22, wherein, described treatment process is the hot working that provides under 400 ℃ or higher temperature, so that described microscopic defect zone is near described cutting zone and stablize described microscopic defect zone.
25. method according to claim 1, wherein, the scope of described first temperature is 100 ℃ to 250 ℃.
26. method according to claim 1, wherein, described first temperature is lower than 250 ℃.
27. method according to claim 1, wherein, described second temperature is higher than 250 ℃ and be not higher than 550 ℃.
28. method according to claim 1, wherein, the described thickness that separates material has the thickness greater than 50 μ m.
29. method according to claim 1, wherein, the described thickness that separates material has the thickness greater than 80 μ m.
30. method according to claim 1, wherein, the described thickness that separates material has the thickness greater than 100 μ m.
31. method according to claim 1, wherein, described cutting technique is controlled cutting technique.
32. method according to claim 1, wherein, described cutting technique is hot working.
33. method according to claim 1, wherein, the scope of described second temperature is 20 ℃ to 450 ℃.
34. method according to claim 1, wherein, described more than first high energy particle and described more than second high energy particle provide with expanding beam from described linear accelerator.
35. method according to claim 34, wherein, described expanding beam has the size of diameter 500mm on described surf zone in Semiconductor substrate.
36. method according to claim 1, wherein, described linear accelerator comprises the DC accelerator.
37. a method that is used to form the free-standing thickness of layer material for transfer, described method comprises:
Crystalline substrate material with surf zone is provided;
Introduce a plurality of first particles with first dosage range and in first temperature range with first angle, wherein said first dosage range is to be lower than to be enough to make described first particle for good and all to be configured in amount in the described crystalline substrate material of accumulation region, be arranged on a substrate in the size to form described accumulation region by described surf zone to the accumulation region of described crystalline substrate material with formation with having the injection distribution of Cmax and space, described first particle causes a plurality of defectives in the crystalline material of described accumulation region, described accumulation region is by limiting greater than 20 microns the degree of depth and at the thin slice of the crystalline material of waiting to separate between described accumulation region and the described surf zone at described surf zone;
Implement treatment process so that a plurality of permanent defective forms on described crystalline substrate material, wherein said permanent defects is quenched from the described crystalline substrate material of described first particle in described accumulation region;
A plurality of second particles are incorporated in the described accumulation region with second angle at second dosage range and in second temperature range, increasing the internal stress in the described accumulation region, thereby make the part of described accumulation region become and to cut; And
The free-standing thickness that separates the thickness formation crystalline material of crystalline material by remainder from described crystalline substrate material.
38. according to the described method of claim 37, wherein, described crystalline substrate material is a monocrystalline silicon.
39. according to the described method of claim 37, wherein, described crystalline substrate material is a polysilicon.
40. according to the described method of claim 37, wherein, described crystalline substrate material is a silicon ingot.
41. according to the described method of claim 37, wherein, described first particle in described accumulation region was metastable before described treatment process.
42. according to the described method of claim 37, wherein, described first dosage range is 2 * 10 15/ cm 2To 2 * 10 16/ cm 2
43. according to the described method of claim 37, wherein, described first particle is to be introduced into in-50 ℃ to 100 ℃ the temperature in the described crystalline substrate material scope that is maintained at.
44. according to the described method of claim 37, wherein, described first particle is to be introduced into in-100 ℃ to+250 ℃ the temperature in the described crystalline substrate material scope that is maintained at.
45. according to the described method of claim 37, wherein, described first temperature and first dosage cause partly amorphous domain in described accumulation region.
46. according to the described method of claim 37, wherein, described first temperature is lower than 200 ℃.
47. according to the described method of claim 37, wherein, described treatment process comprises Technology for Heating Processing.
48. according to the described method of claim 47, wherein, described Technology for Heating Processing is that thermal anneal step is to form the permanent defects network in described accumulation region.
49. according to the described method of claim 37, wherein, described first particle provides by first wave beam.
50. according to the described method of claim 37, wherein, described crystalline substrate material is provided on the pallet apparatus.
51. according to the described method of claim 50, wherein, described pallet apparatus is provided for described first angle and described second angle.
52. according to the described method of claim 37, wherein, described first angle is 0 to 30 degree.
53. according to the described method of claim 37, wherein, described first angle is 0 to 25 degree.
54. according to the described method of claim 37, wherein, described first particle comprises hydrogen.
55. according to the described method of claim 37, wherein, described second particle provides by second wave beam.
56. according to the described method of claim 37, wherein, described second angle is 0 to 15 degree.
57. according to the described method of claim 37, wherein, described second angle is 0 to 7 degree.
58. according to the described method of claim 37, wherein, described first particle comprises identical particle with described second particle.
59. according to the described method of claim 37, wherein, described first temperature is corrected to described second temperature.
60. according to the described method of claim 37, wherein, described second dosage provides after described first dosage in a continuous manner.
61. according to the described method of claim 37, wherein, described second dosage provides after described first dosage.
62. according to the described method of claim 37, wherein, described first dose rate provides with 500 microamperes to 50 milliamperes and the accumulated dose rate is calculated by the injection of integration above expanding beam zone flux rate.
63. according to the described method of claim 37, wherein, described surf zone is flat after second dosage.
64. according to the described method of claim 37, wherein, described substrate has 2Rp and littler width.
65. according to the described method of claim 37, wherein, described second particle is provided by making described surf zone stand hydrogen load environment.
66. according to the described method of claim 65, wherein, described second particle is to provide when the thickness of described material is maintained at second temperature range, thereby wherein selects described second temperature range to be enough to allow described second particle to spread in the described accumulation region that is limited by described first particle and gather.
67. according to the described method of claim 65, wherein, described hydrogen load environment is selected from hydrogen plasma, nitrogen atmosphere or rich hydrogen spin material or rich hydrogen ion liquid.
68. a method of utilizing one or more Semiconductor substrate to be used for the free-standing thickness of manufactured materials comprises:
Semiconductor substrate with surf zone and thickness is provided;
Make the surf zone of described Semiconductor substrate stand more than first high energy particle that utilizes linear accelerator to produce, in cutting zone, to form the one patterned zone at a plurality of absorptions position, described cutting zone is provided at material is separately treated in described surf zone below with qualification thickness, described Semiconductor substrate is maintained at first temperature, described more than first high energy particle is provided with first implant angle, and described one patterned zone is provided to cause causing the cutting behavior;
Make described Semiconductor substrate stand treatment process;
Make the surf zone of described Semiconductor substrate stand more than second high energy particle, provide described more than second high energy particle to increase to second stress level from first stress level with stress level with described cutting zone, described Semiconductor substrate is maintained at second temperature, and described more than second high energy particle is provided with second implant angle;
Selected location in described one patterned zone causes described cutting behavior, separates a described part of separating the thickness of material to utilize cutting technique; And
Utilize cutting technique to make described thickness independence of separating material.
69. according to the described method of claim 68, wherein, described one patterned zone is provided in the neighboring area of described Semiconductor substrate.
70. according to the described method of claim 68, wherein, on described one patterned zone is provided at from described surf zone to the z-direction at described absorption position.
71. according to the described method of claim 68, wherein, described one patterned zone is provided in the described absorption position.
72. a method of utilizing one or more Semiconductor substrate to come the free-standing thickness of manufactured materials comprises:
Semiconductor substrate with surf zone and thickness is provided;
Make the surf zone of described Semiconductor substrate stand to comprise to utilize more than first high energy particle of the D+ material that linear accelerator produces, to form a plurality of absorptions position in cutting zone, described cutting zone is provided at described surf zone below and treats the separately thickness of material with qualification;
Make described Semiconductor substrate stand treatment process;
Make the surf zone of described Semiconductor substrate stand to comprise to utilize more than second high energy particle of the H2+ material that described linear accelerator produces, provide described more than second high energy particle to increase to second stress level from first stress level with stress level with described cutting zone;
Cause described cutting behavior in the selected location of described cutting zone and separate a described part of separating material thickness to utilize cutting technique; And
Make described thickness independence of separating material.
CN2008100091490A 2007-01-29 2008-01-29 Method for manufacturing material independent thickness using one or multiple semiconductor substrate Expired - Fee Related CN101236895B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US88708607P 2007-01-29 2007-01-29
US60/887,086 2007-01-29
US12/019,886 2008-01-25
US12/019,886 US7910458B2 (en) 2007-01-29 2008-01-25 Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials

Publications (2)

Publication Number Publication Date
CN101236895A CN101236895A (en) 2008-08-06
CN101236895B true CN101236895B (en) 2011-05-04

Family

ID=39710884

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100091490A Expired - Fee Related CN101236895B (en) 2007-01-29 2008-01-29 Method for manufacturing material independent thickness using one or multiple semiconductor substrate

Country Status (3)

Country Link
JP (1) JP2008244435A (en)
CN (1) CN101236895B (en)
SG (1) SG144883A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133800B2 (en) * 2008-08-29 2012-03-13 Silicon Genesis Corporation Free-standing thickness of single crystal material and method having carrier lifetimes
CN102381688A (en) * 2011-09-06 2012-03-21 武汉科技大学 Concentrated sulfuric acid preparation method using hydrogen sulfide in manufactured gas
FR2988516B1 (en) * 2012-03-23 2014-03-07 Soitec Silicon On Insulator IMPROVING IMPROVING METHOD FOR ENHANCED SUBSTRATES
FR2993095B1 (en) * 2012-07-03 2014-08-08 Commissariat Energie Atomique DETACHMENT OF A SILICON-FREE LAYER <100>
JP6539959B2 (en) * 2014-08-28 2019-07-10 株式会社Sumco Epitaxial silicon wafer, method of manufacturing the same, and method of manufacturing solid-state imaging device
WO2017221546A1 (en) 2016-06-24 2017-12-28 富士電機株式会社 Method for manufacturing semiconductor device, and semiconductor device
CN108461555A (en) * 2018-02-05 2018-08-28 宇泰（江西）新能源有限公司 A kind of monocrystalline Silicon photrouics with Surface Texture structure
WO2019209492A1 (en) * 2018-04-27 2019-10-31 Globalwafers Co., Ltd. Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184111B1 (en) * 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
CN1770391A (en) * 2004-11-01 2006-05-10 国际商业机器公司 Hetero-integrated strained silicon n-and p-mosfets
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001011930A2 (en) * 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US7312125B1 (en) * 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184111B1 (en) * 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
CN1770391A (en) * 2004-11-01 2006-05-10 国际商业机器公司 Hetero-integrated strained silicon n-and p-mosfets
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers

Also Published As

Publication number Publication date
JP2008244435A (en) 2008-10-09
SG144883A1 (en) 2008-08-28
CN101236895A (en) 2008-08-06

Similar Documents

Publication Publication Date Title
US7910458B2 (en) Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
CN101236895B (en) Method for manufacturing material independent thickness using one or multiple semiconductor substrate
CN101490824B (en) Method and system for continuous large-area scanning implantation process
CN101536169B (en) Method and structure for thick layer transfer using a linear accelerator
JP6371761B2 (en) Techniques for forming optoelectronic devices
US8133800B2 (en) Free-standing thickness of single crystal material and method having carrier lifetimes
CN105051919A (en) Techniques for forming optoelectronic devices
JP6224730B2 (en) Method for forming a diffusion region of a solar cell
TW201030953A (en) Improving dark currents and reducing defects in image sensors and photovoltaic junctions
CN104934319A (en) Method of Manufacturing Semiconductor Devices Including Generating and Annealing Radiation-Induced Crystal Defects
JP2009542005A5 (en)
KR20110063452A (en) Improved cleaving of substrates
CN103794473B (en) The method of transition metal impurity in silicon wafer or silicon device is absorbed under a kind of room temperature
Bruzzi et al. Radiation-hard semiconductor detectors for SuperLHC
TW201110200A (en) Solar cell defect passivation method
US20130340819A1 (en) Emitter structure based on silicon components to be used in a photovoltaic converter and a method for production of the photovoltaic device
CN109004022B (en) A kind of diode and its manufacturing method
WO2009034699A1 (en) Semiconductor device manufacturing method
KR101162444B1 (en) Method for heating a plate with a light stream
CN1628370B (en) Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
Nazarov et al. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
TWI246193B (en) Semiconductor devices using minority carrier controlling substances
Berhanuddin et al. Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique
Buzzo et al. Characterization of 2D dopant profiles for the design of proton implanted high-voltage super junction
Pan et al. Design and Simulation of High Efficiency Silicon Light-Emitting Diodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110504

Termination date: 20220129