CN101263243B - 具有纹理表面的流动形成的室组件 - Google Patents

具有纹理表面的流动形成的室组件 Download PDF

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CN101263243B
CN101263243B CN2006800330490A CN200680033049A CN101263243B CN 101263243 B CN101263243 B CN 101263243B CN 2006800330490 A CN2006800330490 A CN 2006800330490A CN 200680033049 A CN200680033049 A CN 200680033049A CN 101263243 B CN101263243 B CN 101263243B
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S·E·阿布尼
A·韦斯希
J·F·萨莫斯
M·O·施韦策
S·迪克森
J·蒂勒
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Applied Materials Inc
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Abstract

一种制造用于基板处理室的组件的方法，其涉及提供一具有内表面及外表面的预型体，及提供一心轴，该心轴具有一纹理表面且其纹理特征图案至少包含突起及凹陷。该预型体组件的内表面和心轴的纹理表面接触，且对预型体的外表面施加一压力。该压力高到足以将该预型体塑性变形而覆盖在心轴的纹理表面，以形成具纹理内表面的组件，其纹理内表面至少包含纹理特征的图案，该纹理特征图案的外型及尺寸是设计成可吸附基板处理中产生的处理残余物。

Description

具有纹理表面的流动形成的室组件
技术领域
本发明有关于一种制造用于基板处理室的组件的方法，特别是有关于以流动形成制造具有纹理表面的组件的方法。
背景技术
在处理如半导体晶片及显示器等基板时，将一基板置于一处理室内并暴露于一能量化气体中以便在基板上沉积或蚀刻材料。在此处理过程中，会产生处理残余物且可能沉积于处理室的内表面上。举例而言，在溅镀沉积制程中，由一靶材溅镀出来以沉积在一基板上的材料亦会沉积在处理室中的其它组件表面上，例如沉积环、阴蔽环、室壁内衬及聚焦环。在后续处理循环中，所沉积的处理残余物可能自处理室表面「剥离」而掉落并污染基板。为了减少基板受处理残余物的污染，可使处理室中的组件表面具有纹理。将处理残余物吸附至纹理表面且可抑制处理残余物剥落并避免污染处理室中的基板。
传统上，在多重步骤制程中制造具有纹理表面的组件。在第一制程步骤中，制造组件的外型或整体结构，举例而言，可将一块金属利用计算机数字控制(CNC)切削成所需结构。之后，利用一第二制程处理在切削后的组件上形成纹理表面。举例而言，表面纹理加工处理可包括研磨、珠喷沙或抛光、或上述处理的组合。在一情形中，欲形成纹理表面，可通过将一电磁能光束导向组件的一表面上，以形成可良好吸附处理沉积物的凹陷及突起。此一表面的其中一实施例为LavacoatTM表面，其可见于，如Popiolkowski等人拥有的美国专利公告案2003-0173526号(2003年9月18日公告，2002年3月13日申请)；以及Popiolkowski等人拥有的美国专利案6,812,471号(2004年11月2日核准)，此处将二文献整体纳入本文中作为参照。LavacoatTM表面至少包含凹陷及突起，其可供处理残余物吸附至该处，以便在基材处理过程中减低基板的污染。
然而，用来制造纹理组件的传统制程通常很昂贵，因为需要多重制程步骤才能形成该组件及其纹理表面。制造成本阻挠了纹理组件的大量实作，即便该组件提供了许多处理上的优点。传统制造制程的成本至少部份肇因于在这些制程中所用的复杂的多步骤制程程序，以及昂贵的制造设备。举例而言，组件制造机械，例如产生电磁能光束的仪器，非常昂贵且可能大幅增加该纹理组件的制造成本。
当用于整修表面纹理组件的洗净制程在数个洗净循环后腐蚀该组件时，组件的制造时间及成本则成为更进一步的问题。一旦残余物已累积在纹理组件上时，通常会执行一洗净处理以移除残余物，并整修该组件以供重新使用。举例而言，以至少包含硝酸(HNO3)或氟化氢(HF)的溶液重复洗净纹理组件终将腐蚀组件的纹理表面，而通常需要以新制成的组件来取代该腐蚀组件。因此，制造新纹理表面组件的成本会不利地增加操作处理室的相关成本。
因此，需要提出一种制造具有纹理的处理室组件的方法，其相较于传统制造制程更为廉价且有效率。更需要提出一具有可供处理残余物良好吸附的纹理表面的组件。
附图说明
参照阐明本发明实施例的叙述内容、所附申请专利范围以及图式可进一步了解本发明的上述特征、态样、及优点。然而，可以理解，这些特征的每一个通常皆可用于本发明中，而不仅限于特定图式中所绘示的情况，且本发明包括这些特征的任意组合，其中图式如下：
图1A为部份侧视剖面图，绘示一种用以执行一流动形成制程的装置的具体实施例；
图1B为图1A的装置在流动形成制程中处于不同位置时的另一视图；
图2为部份侧视剖面图，绘示通过流动形成制程所形成具纹理内表面的组件；
图3为部份前视剖面图，绘示一用于流动形成制程中具纹理表面的心轴具体实施例；
图4为一部份侧面图式，绘示一利用流动形成制程所形成的屏蔽具体实施例；以及
图5为一部份侧面剖面图，绘示具有一或多个流动形成组件的处理室的具体实施例。
主要组件符号说明
20内表面                        22组件
24预型体                        26心轴
28纹理表面                      30a倒像特征
30b突起                         34图案
36组件壁                        40第一端
42尾座                          44纵轴
46加压装置                      48压力滚轮
50外表面                        52装置
56轴承                          58表面图案
60浮凸突起                      60凹陷
62交互的突起                    62凹陷
64凹陷                          66转角
64相对应突起                    70空心内部区段
104基板                         105表面
106处理室                       109处理区
112气体运送系统                 114基板支撑件
116气体能量化器                 118外罩壁
120屏蔽                         122排气装置
124溅镀靶材                     125靶材边缘
126盖环                         128沉积环
130支撑环                       132绝缘环
134上表面                       135气体通电线圈
137线圈支撑件                   139处理套组
141夹合屏蔽                     164侧壁
166下壁                         168顶壁
170电极                         172电源供应
174气体来源                     176导管
178阀                           180气体分配器
182气体出口                    184排气埠
186排气导管                    188节流阀
190排气泵                      192电源供应
194控制器
具体实施方式
基板处理室至少包含可用以在能量化气体中处理基板的多个组件。所述组件其中一或多个包含一纹理表面，使得在基板处理过程中产生的处理沉积物能够吸附至该组件表面，以减低处理的基板受处理沉积物的污染。吸附至处理室组件的纹理表面的处理沉积物可包括含金属沉积物，例如包含下列至少一个的沉积物：钽、氮化钽、钛、氮化钛、铝、铜、钨及氮化钨。
所选处理室组件22的纹理表面20以及组件本身的外型是通过一种适用于纹理表面组件的流动形成装置及制程来形成的，例如，图1A及1B中所示的装置与制程。该流动形成装置对预型体24施加压力，以便将该预型体的材料塑性变形并流过心轴26，以提供组件22所需的整体外型。可依需要来调整心轴26，以便在与心轴26接触的预型体24的表面20上形成一预定纹理图案。举例而言，心轴26可能包含一纹理表面28。在所施加的压力下，组件材料的塑性变形可模塑该预型体24的表面20，以符合心轴表面28的纹理，因此可将至少一部份的心轴表面图案转移至最终处理室组件22上。通过提供一种特制成用以创造所需表面纹理图案34的心轴26，流动形成制程可有效并重复形成不仅具有所需整体外型且具有所需表面纹理图案34的组件22。
预型体24具有预先选择的尺寸及外型，该外型可形成所需要的最终组件22。适用于一流动形成制程的预型体外型可以是，例如圆锥形、圆柱形、似管状及其它形状，其可在心轴26上模塑并顺形。传统上，预型体具有圆形对称的轴，该轴和心轴26的对称轴对齐。预型体24的壁36制造得够厚，因而在经过流动形成制程所造成的塑性变形后，组件22的壁能够得到理想的最终厚度。举例而言，预型体壁36的厚度比组件壁厚度多出一计算量，举例而言，至少5％，以达到最终组件22的壁的理想最终厚度。预型体24是由具有相对较高延展性的金属所制成，其可在压力下塑性变形，且基本上不会造成金属破裂或裂痕。合适的金属可至少包含，如下列至少一个：铝、铜、不锈钢、钛、及相关合金。形成预型体24的方法可包括深压成型、冲压成型、CNC切削、压型加工、以及习知技艺人士已知的其它金属外型制造方法。
在流动形成制程中，预型体24至少包含一内表面20，其可贴附至少一部份心轴26的纹理表面28，且可放置于心轴26的表面28上。心轴26为流动形成装置52的一组件，该流动形成装置52至少包含适用于组件22的流动形成的其它部份。预型体24的第一端40可能是封闭或半封闭端，其可由一轴承56和/或尾座42握持，该轴承56和/或尾座42能够施加一液压以便将预型体24保持在适当位置。心轴26通常会绕其纵轴44旋转，举例而言，通过一马达(此处未显示)来同步旋转心轴26与预型体24。可将一加压装置46，例如压力滚轮48，作用于预型体24的外表面50上，以将预型体材料塑性变形并沿着心轴26的表面28轴向流动。
在所示具体实施例中，压力滚轮48朝向预型体24的第一端40移动，以将预型体材料朝向远离预型体24的第一端40的方向按压而在心轴26上移动。施加高于其屈服强度的压力下，压缩并塑形该预型体材料，以沿着心轴26的表面28轴向流动该材料。因此，压力滚轮48通过沿着心轴26流动该预型体材料，以减低预型体24的壁36的厚度并延长预型体24的壁36的长度。施加至外表面50的压力够高足以塑性变形并流动该预型体材料，且基本上不会造成材料破裂或裂痕。所施加压力会随着正在形成的材料特性而改变。心轴及滚轮相距一界定距离而作配置，该距离可为恒定距离或可变距离，以建立该完成部份的内及外表面间的关系。在一种态样中，压力滚轮48可至少包含外型为圆形的滚轮，其适合通过一马达(此处未显示)以与心轴26的旋转方向平行或反平行的方向来旋转，且因此可在预型体24的外表面50上施加一径向力。压力滚轮48亦可至少包含一前斜边54，其可在预型体24的外表面50上施加一轴向力，以驱使预型体材料于轴向方向上经过心轴26的表面28。在一态样中，在预型体24的外围上间隔放置数个压力滚轮48，且所述压力滚轮48亦可轴向及径向地相间隔，以便在预型体外表面50的数个不同区域上施加压力。
该用于流动形成制程的心轴26可根据意愿加以调整以提供最终流动形成组件22所需的整体外型及表面纹理图案34。举例而言，心轴26可至少包含适用于组件壁36的所需长度的轴长。心轴26亦可视需要而包含纹理表面28，其适合形成一组件22的内表面20所需的表面纹理图案34。举例而言，心轴26可至少包含一纹理表面28，其具有一心轴表面图案58，该图案为处理室组件22所需的表面纹理图案34的倒像或镜像。形成于组件22的表面20上的表面纹理图案34为在流动形成制程过程中施加压力所产生的结果，该压力将预型体材料按压于心轴表面28上，使得组件22的内表面基本上呈现心轴表面28的轮廓。举例而言，对于包含浮凸突起60a及凹陷60b的心轴表面28，可将预型体材料按压并流动至心轴表面28中的凹陷60b内，以在组件22的表面上形成包含突起30b在内的相对应倒像特征30包含的，如图2中所示般。该预型体材料亦可沿着心轴表面28上的突起60a流动，以在组件表面20中形成包含凹陷30a的相对应倒像特征30。可根据所需的表面纹理图案34来选择提供于心轴表面28的特征60，且其可包含例如突起60a及凹陷60b，所述突起60a及凹陷60b包含下列至少一个：隆起、孔洞、波纹(ridge)、凹槽、及组件表面20可能需要的其它特征。在一态样中，心轴26甚至包含在该心轴表面28一区域内的突起60a及凹陷60b的尺寸与分布(spacing)不同于该心轴表面28一不同区域中突起60a及凹陷60b的尺寸及分布。在心轴26上流动形成组件22允许形成具有预定尺寸及整体外型的组件22的表面20，且可在该组件22的表面上同时形成一所需的表面纹理图案34，因此提供了一种有效且改良的处理室组件22制造方式。
在一态样中，通过在一具有交错的突起62a及凹陷62b的心轴26上流动形成一组件22以提供一种改良的表面纹理图案34，该心轴例如图3中所示。该交错的突起62a及凹陷62b在组件22的表面20中形成一倒像表面纹理图案34，该倒像表面纹理图案34包含相对应突起64a及凹陷64b，以允许将基板104处理过程中产生的处理残余物吸附至纹理组件22的表面20，以减低残余物造成的基板104污染。心轴表面28中的突起62a可至少包含，举例而言，墩丘或隆起，其高度由心轴表面28的一平均表面高度h测量起，至少约为0.005至0.050英寸。突起62a在其二分之一高度处的宽度可介于约0.07至0.070英寸间。心轴表面28的凹陷62b的深度包含低于该平均表面高度h至少约0.005至0.050英寸，且凹陷62b在其二分之一深度处的宽度介于约0.002至0.130英寸间。在流动形成组件22的表面20中形成的突起64b及凹陷64a的尺寸基本上对应于心轴突起62a及凹陷62b的尺寸。
在一态样中，纹理表面28至少包含一基本上欠缺锐角及锐边的表面横切面，例如图3中所示者。该正弦曲线横切面至少包含一类似正弦波的横切面轮廓，且具有根据所需的组件特性而选出的正弦曲线横切面的波长及振幅。该正弦曲线横切面提供一种平滑变化的表面并具有交错的突起62a及凹陷62b以增进吸附处理残余物，并减低沉积残余物可能因尖锐或突然表面转换而发生的裂痕或断裂。合适的正弦曲线表面横切面中，相邻突起62a间的波峰至波峰距离介于约0.015至0.180英寸，且及振幅介于约0.005至0.050英寸。在一态样中，心轴表面28至少包含一第一正弦曲线横切面与一第二正弦曲线横切面，该第一正弦曲线横切面围绕包覆着至少一部份的该心轴26的轴44，如图3中所示，该第二正弦曲线横切面沿着该心轴26的轴44纵向延伸，如图1中所示。在理想的情形中，纹理表面28基本上现欠缺锐角66以及锐边，且取而代的的是其基本上包含圆角66及圆边。
亦可特制地设计心轴26，用以形成复杂且基本上非线性的表面纹理图案34，以便在基板104的处理中提供改良的结果。此种复杂的表面图案使得在流动形成制程之后，难以自心轴26移除该流动形成组件22。举例而言，对于不允许组件22由心轴26滑动或扭转的表面图案34，自心轴26移开组件22就非常具有挑战性。此种本身不易将组件22由心轴26扭转或滑动的表面图案34是包含交错突起64b及凹陷64a的表面图案34，因为心轴及组件突起62a、64b可锁定至心轴及组件凹陷62b、64a中。一般而言，表面图案34若未包含延伸至组件22至少一端40的线性或螺旋凹陷30a，则将其自心轴26上移除时都可能面临挑战。在一态样中，借着使心轴26可至少部份可折迭，而适用于制造此种复杂表面图案，使得在流动形成制程后，可轻易自心轴26上移除组件22。举例而言，心轴26可至少包含一空心内部区段70，在流动形成制程之后，可将心轴26的部份折迭于该空心内部区段70中，以提供一种较小的心轴圆周并改善由心轴26移除组件22的简易性。举例而言，可将心轴26铰接或以其它方式建构，而使得心轴可在其本身上收折。在又一态样中，心轴26的表面28上的突起60a，例如正弦曲线横切面突起62a，能够在流动形成之后，将其收回至心轴的空心内部区段70中，以便由心轴表面28「松脱」组件22。因此，该改良的心轴26得以在组件22上形成实质欠缺沿着内组件22的内表面20长度延伸的线性或螺旋凹陷的复杂表面图案34，且不限于实质线形或螺旋的表面图案。
在另一态样中，可通过一种适当热源加热该组件，而将该流动形成组件22自心轴26移除。组件22的膨胀至足以使得其内表面20脱离心轴26上的突起64b与凹陷64a的高度，而呈解开状态，而得以由心轴26移除组件22。所需的热量随着心轴26上突起64b及凹陷64a的深度以及组件材料的热胀是数而不同。
图4绘示一种由流动形成制程所制造的组件22的实施例。组件22至少包含一屏蔽120，举例而言其适用于一沉积室106。由一预型体24形成组件22，预型体24至少包含圆柱形侧壁36，可在流动形成制程中将圆柱形侧壁36按压至所需的屏蔽壁长度及厚度。具有屏蔽120的组件22的内表面20包含所需的表面纹理图案34(此处未显示)，以供处理残余物吸附至该处以减低对已处理基板104的污染。因此，该流动形成方法能够在一单一处理步骤中，提供具有所需的整体外型及表面纹理的组件22，因而提供了一种更有效率且可重复形成组件22的方式。
将由流动形成方法所形成的不同态样的具纹理表面20组件22用于一基板处理室106中，图5中显示了基板处理室的示范性实施例。处理室106为一多处理室平台(此处未显示)的一部份，多处理室平台具有由一机械手臂机构互相连结的处理室所构成的群集设备，一机械手臂机构可在所述处理室106的间输送基板104a。在所示的实施例中，处理室106至少包含一溅镀沉积室，亦称为一种物理气相沉积或PVD处理室，其能够将材料溅镀沉积于一基板104a上，例如下列的一或更多个材料：钽、氮化钽、钛、氮化钛、铜、钨、及氮化钨、及铝等。处理室106至少包含外罩壁118其可圈围出一处理区109且外罩壁118包括多个侧壁164、一下壁166及一顶壁168。可在所述侧壁164及顶壁168间放置一支撑环130，以支撑顶壁168。其它处理室壁可包括一或多个屏蔽120以便将外罩壁118与溅镀环境隔绝开来。
处理室106至少包含一基板支撑件114，以支撑溅镀沉积室106中的基板。基板支撑件114可电子漂浮或可包含一电极170，其可由例如RF电源供应等电源供应172进行偏压。基板支撑件114亦可支撑其它晶片104例如一可移动挡片(shutter disc)104b，当基板104a不存在时，其可保护支撑件114的上表面134。在操作时，经由位于处理室106的一侧壁164中的一基板载入口(此处未显示)将基板104a引入处理室106中，并将基板104a放置于支撑件114上。在输送基板104a进出处理室106的过程中，可由支撑升降伸缩装置来抬高或低该支撑件114，且可利用一升降指部组件(此处未显示)将基板抬高或降低至支撑件114上。
支撑件114亦可包含一或多个环，例如一盖环126或沉积环128，其可覆盖支撑件114的上表面134的至少一部份，以抑制支撑件114的腐蚀。在一态样中，沉积环128至少部份环绕该基板104a，以保护支撑件114未被基板104a所覆盖住的部份。盖环126环绕并覆盖至少一部份的沉积环128，且可减低粒子在沉积环128及下方支撑件114二者上的沉积。
经由一气体运送系统112将一处理气体，例如一溅镀气体，导入处理室106中，气体运送系统112包括一处理气体供应，其包含一或多个气体来源174，所述气体来源174个别可馈送至一导管176，该导管176具有一气体流动控制阀178，例如一质量流动控制器，以便在其中传送一设定流动速率的气体。导管176可将气体馈送至一混合歧管(此处未显示)，气体可在其中混合以形成一所需的处理气体组成。该混合歧管可馈送气体至一气体分配器180其在处理室106中具有一或多个气体出口182。该处理气体可包含一惰性气体，例如氩或氙，其能够积极冲击一靶材并自靶材溅镀出靶材材料。处理气体可亦至少包含一反应性气体，例如下列的一或更多个：含氧气体及一含氮气体，其能够和溅镀的材料反应，以便在基板104a上形成一膜层。可经由一排气装置122将使用过的处理气体及副产品由处理室106排出，该排气装置包括一或多个排气埠184其可接收使用过的处理气体并将该使用过的气体传送到一排气导管186，其中有一节流阀188用以控制处理室106中气体的压力。排气导管186可馈入一或多个排气泵190。传统上，将处理室106中的溅镀气体的压力设定为低于大气压程度。
溅镀处理室106至少更包含一溅镀靶材124，靶材124面对基板104a的一表面105且至少包含将溅镀至基板104a上的材料，材料例如，下列至少一个：钽、氮化钽。可通过一环状绝缘环132将靶材124与处理室106电性隔离开来，并该靶材124是连接至一电源供应192。靶材124可至少包含一靶材背衬板，该靶材背衬板具有暴露于处理室106中的一靶材边缘125。溅镀处理室106亦具有一屏蔽120以保护处理室106的一壁118不致接触溅镀的材料。屏蔽120可至少包含一似壁圆柱形外型，其具有上方及下方屏蔽部份120a、120b，可防护处理室106的上方及下方区域。在图4所示的实施例中，屏蔽120具有装配至该支撑环130的一上方部份120a以及装配至盖环126的下方部份120b。亦可提供一夹合装置屏蔽(clamp shield)141，其至少包含一夹环，以便将上方及下方屏蔽部份120a、b夹合在一起。亦可利用替代性屏蔽组态，例如内部及外部屏蔽。在一态样中，电源供应192、靶材124及屏蔽120的其中一者或多个可作为能够能量化该溅镀气体以自靶材124溅击出材料的气体能量化器116。相对于屏蔽120，电源供应192可施加一偏压给靶材124。在处理室106中由所施加的电压产生的电场能够能量化该溅镀气体以形成一电浆，该电浆能够积极冲击并撞击靶材124以便将材料自靶材124溅镀下来并转移到基板104a上。具有电极170及支撑电极电源供应172的支撑件114亦可作为气体能量化器116的一部份，其可能量化由靶材124溅击下来的离子化材料并使的加速朝向基板104a。此外，可提出一气体能量化线圈135，其是由一电源供应192供电且是置于处理室106中，以提供经强化的能量化气体特性，例如改良的能量化气体密度。可由连接至一屏蔽120或处理室106中的另一壁的一线圈支撑件137来支撑气体能量化线圈135。
可由一控制器194来控制处理室106，该控制器至少包含：一具有指令集的程序代码，用以操作处理室106的多个组件于该处理室106中处理该基板104a。举例而言，控制器194可至少包含一基板定位指令集，其可操作基板支撑件114及基板运输装置的一或多个以将基板104a定位于处理室106中；一气体流动控制指令集，其可操作流动控制阀178以设定溅镀气体流动至处理室106；一气体压力控制指令集，其可操作排气节流阀188以维持处理室106中的一压力；一气体能量化器控制指令集，其可操作气体能量化器116以设定一气体能量化的电量程度；一温度控制指令集，其可用于控制处理室106中的温度；以及一处理监控指令集，其可用于监控处理室106中的制程。
具纹理表面20的处理室组件22可至少包含，例如，气体运送系统112、基板支撑件114、处理套组139、气体能量化器116、处理室外罩壁118及屏蔽120、或处理室106的气体排气装置122等不同工艺领域。举例而言，具纹理表面20的处理室组件22可包括一处理室外罩壁118、一处理室屏蔽120、一靶材124、一靶材边缘125、一处理套组139的一组件(例如一盖环126及一沉积环128至少一个)、一支撑环130、绝缘环132、一线圈135、线圈支撑件137、挡片104b、夹合屏蔽141、及一部份的基板支撑件114。举例而言，具纹理表面的组件可包括应用材料公司的产品编号0020-50007、0020-50008、0020-50010、0020-50012、0020-50013、0020-48908、0021-23852、0020-48998、0020-52149、0020-51483、0020-49977、0020-52151、0020-48999、0020-48042及0190-14818，来自Applied Materials，Santa Clara，California。此组件清单仅为例示，且其它组件或来自其它类型处理室的组件亦可具有纹理表面；因此，本发明不应限于所列或此处所示的组件。
此处参照本发明的某些较佳具体实施例来描述本发明；然而亦可能有其它实施例。举例而言，流动形成组件可用于其它类型的应用中，例如，习知技艺人士可轻易了解其可作为蚀刻室的组件。亦可利用其它的流动形成装置组态，且亦可提出除了此处具体所述的图案以外的心轴表面图案。此外，习知技艺人士可轻易了解到，亦可参照所述实施例的参数来运用和本文所述流动形成方法等效的替代性步骤。因而，权利要求的精神及范围不应限于此处所述的较佳具体实施例的描述。

Claims (9)

1.一种制造用于一基板处理室的一组件的方法，该方法至少包含：
(a)提供一具有内表面及外表面的预型体；
(b)提供一具纹理表面的心轴，该纹理表面的纹理特征图案至少包含多个循环且交错的突起及凹陷，所述纹理特征实质上不具有锐角及锐边；
(c)将该预型体的内表面和该心轴的纹理表面接触；以及
(d)施加一压力至该预型体，该压力够高而足以塑性变形该预型体并导致该预型体的内表面在心轴的纹理表面上流动，以形成一具纹理内表面的组件，该纹理内表面包含一纹理特征图案。
2.如权利要求1所述的方法，其中上述的(d)步骤包含形成一具纹理内表面的组件，且该纹理内表面欠缺沿着该纹理内表面的长度延伸的线性或螺旋凹陷。
3.如权利要求1所述的方法，其中上述的(b)步骤包含提供一具有交错突起与凹陷的图案的心轴，所述突起与凹陷具有至少一下列特征：
(i)所述突起的高度介于0.005至0.050英寸；
(ii)所述突起在二分之一高度处的宽度介于0.007至0.070英寸；
(iii)所述凹陷的深度介于0.005至0.050英寸；
(iv)所述凹陷在二分之一深度处的宽度介于0.002至0.130英寸；以及
(v)所述突起及凹陷构成的图案包含一正弦曲线横切面。
4.如权利要求1所述的方法，其中上述的(b)步骤包含提供一心轴，该心轴至少部份可折迭。
5.如权利要求1所述的方法，其中上述的(a)步骤包含提供一预型体，其具有圆柱形侧壁且该圆柱形侧壁包含该内表面及外表面。
6.如权利要求1所述的方法，其中在上述(d)步骤中，通过加热该组件并使得该组件的内表面膨胀超过该心轴的突起的高度，以便自该心轴移除该组件。
7.如权利要求1所述的方法，其中上述的(a)步骤包括提供具有圆柱形侧壁的预型体，该圆柱形侧壁具有内表面和外表面，(d)步骤至少包含通过在该预型体的外表面上按压旋转滚轮以在该预型体上施加一压力，以变形该预型体的圆柱形侧壁，并使得该圆柱形侧壁的内表面在心轴的纹理表面上流动以形成基板处理室的屏蔽。
8.如权利要求1所述的方法，其中上述的预型体包含下列至少一种：铝、铜、不锈钢、钛及前述材料的合金。
9.一种如权利要求1所述方法所形成用于一基板处理室的组件，其中该组件包含下列至少一个：一处理室外罩壁、一处理室屏蔽、一靶材、一靶材边缘、一处理套组的一组件、一盖环、一沉积环、一支撑环、一绝缘环、一线圈、一线圈支撑件、一挡片、一夹合屏蔽及一基板支撑件。
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US20070059460A1 (en) 2007-03-15
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WO2007030824A3 (en) 2007-09-07
WO2007030824A2 (en) 2007-03-15
US7762114B2 (en) 2010-07-27
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