CN101324652B - Method and device for testing reliability - Google Patents

Method and device for testing reliability Download PDF

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Publication number
CN101324652B
CN101324652B CN 200710042199 CN200710042199A CN101324652B CN 101324652 B CN101324652 B CN 101324652B CN 200710042199 CN200710042199 CN 200710042199 CN 200710042199 A CN200710042199 A CN 200710042199A CN 101324652 B CN101324652 B CN 101324652B
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current
under test
element under
voltage
test
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Expired - Fee Related
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CN 200710042199
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CN101324652A (en
Inventor
周柯
陈祯祥
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Abstract

A test method of reliability comprises an element to be tested and a test device, wherein the element to be tested comprises electrodes, and a signal end of a current-voltage unit of the test device is connected with the electrodes of the element to be tested through at least one inducer. Accordingly, the invention further provides the test device of reliability. At least one inducer is connected between the single end of the current-voltage unit of the test device and the electrodes of the element to be tested in series; as the inducer has the delay function when in current mutation, the current-voltage unit has enough time to measure the breakdown current value through delaying the high energy which is stored in the test device to be imposed on the two electrodes of the element to be tested, and the judgment can be made through a procedure, thereby withdrawing from the test in time and further preventing a probe and the electrodes of the element to be tested from being burned.

Description

The method of testing of reliability and testing apparatus thereof
Technical field
The present invention relates to the method for testing and the testing apparatus thereof of reliability.
Background technology
Usually, probe is used to test Electronic Performance and the circuit function that is formed on the semi-conductor chip on the semiconductor wafer.In general, this test is to carry out under this semi-conductor chip still is in the state of wafer form, and probe places on this wafer, make the respective electrode of the semiconductor devices in probe and the semi-conductor chip contact, thereby reach electric property by the semiconductor devices on the probe test semi-conductor chip.
Prior art discloses the manufacture method of a kind of probe tile, probe, semiconductor checking device and semiconductor device.This probe has: first contact terminal that is electrically connected with the electrode of the inspection object that forms with narrow-pitch, the wiring of drawing from this first contact terminal and second contact terminal that is electrically connected with this wiring, this first contact terminal are the etching hole formation of utilization with crystalline member.But the method for testing of the capacitor that above-mentioned prior art unexposed test capacitors, especially voltage breakdown is bigger and testing apparatus.
In being 03159863 Chinese patent, the patent No. can also find more information relevant with technique scheme.
When carrying out reliability testing, for the bigger capacitor of the electrical thickness of dielectric layer (the electrical thickness range of dielectric layer be 20 to 2000nm), voltage breakdown is higher, need add bigger voltage and could puncture (30 to 200V), in the moment of capacitor breakdown, owing in the probe of a large amount of energy accumulations and the minimum area that the capacitance electrode of test contacts, cause probe and electrode in very short time, to melt easily, be illustrated with reference to the accompanying drawings.
At first with reference to accompanying drawing 1, be given in test capacitors after, optical microscope (OM) picture of the probe that constitutes by a plurality of probes, as can be seen, after test, the top needle point of probe 11 and probe 14 has become graininess on the probe.Fig. 2 provides the magnification optical microscopy picture of probe 11 top needle points, and as can be seen, probe 11 tops are silvery white, can infer it is because probe 11 top needle point fusings form from its change of shape.
In order to contrast, Fig. 3 has provided the normal surperficial microscope picture of two electrodes of capacitor after reliability testing.As can be seen, have impression 13 at two electrode surfaces of capacitor, the electrode surface outside the impression 13 is totally complete.Simultaneously, Fig. 4 provides for the capacitor of the electrical thickness of dielectric layer big (the electrical thickness range of dielectric layer be 20 to 2000nm) the optical microscope picture through the electrode surface after the reliability testing.As can be seen, electrode 14 surface irregularities of whole capacitor device, structure is extremely inhomogeneous, is burnt.Because burning of probe, probe can not add utilization again, therefore needs to change probe, and this has increased the complexity and the cost of technology in practical operation.
Testing apparatus below by the research reliability is studied the reason that the electrode of probe and capacitor is burnt.Before test, at first parameters such as test specification, retention time, voltage spaces value (step) and standard capacitor breakdown voltage value are set in software, the current/voltage unit (SMU) of testing apparatus applies voltage to test loop during test, keeps about 0.5s; Then, the current value at Measurement of capacitor two ends, current/voltage unit (SMU), software will measure the acquisition current value and standard capacitor breakdown potential flow valuve compares, if current value is less than standard capacitor breakdown potential flow valuve, then continue to increase voltage with voltage spaces value (step) speed by software control current/voltage unit (SMU), if can making, current value overgauge gate capacitance breakdown potential flow valuve, program judge the termination test.Because current/voltage unit (SMU) measures the current value in whole loop and software will measure the acquisition current value and standard capacitance breakdown potential flow valuve compares the process need certain hour, in capacitor breakdown moment, current break is to very high level, at this moment the instantaneous short circuit state appears in circuit, though this moment current value overgauge capacitor breakdown current value, but since the current/voltage unit still unreacted go out this moment current value, can not stop test at once, because whole testing apparatus measuring head is equivalent to a very big capacitor, accumulate in and can be applied to measured capacitance device two ends than macro-energy (upper limit is 14W) in the testing apparatus this moment, the electrode and the probe tip needle point that cause capacitor burn, and experimental results show that the energy greater than 2W just can burn probe.
Summary of the invention
The problem that the present invention solves is in the prior art, in the time of the capacitor of the electrical thickness of tested media layer big (electrically thickness range be 20 to 2000nm), because the voltage that applies is higher, causes the electrode and the probe fusing of capacitor easily.
For addressing the above problem, the invention provides a kind of method of testing of reliability, comprising: element under test is provided, and described element under test has electrode; Testing apparatus is provided, and the signal end of the current/voltage unit of described testing apparatus links to each other with probe by at least one inductor; The probe of testing apparatus should be contacted with the electrode pair of element under test carry out reliability testing.
Described element under test is a capacitor.
The dielectric layer of described capacitor is a monox, and electrically thickness range is 20 to 2000nm.
The inductance value range of described inductor is 0.5 to 2H.
Correspondingly, the present invention also provides a kind of testing apparatus of reliability, comprising: the current/voltage unit is used for applying voltage and test element under test two ends electric current to element under test; Probe should contact with the element under test electrode pair, and the signal end of described current/voltage unit links to each other with probe by at least one inductor.
The inductance value range of described inductor is 0.5 to 2H.
The present invention also provides a kind of method of testing of reliability, comprising: element under test is provided, and described element under test has electrode; Testing apparatus is provided; The probe of testing apparatus should be linked to each other with the electrode pair of element under test by at least one inductor carry out reliability testing.
Described element under test is a capacitor.
The dielectric layer of described capacitor is a monox, and electrically thickness range is 20 to 2000nm.
The inductance value range of described inductor is 0.5 to 2H.
Compared with prior art, technique scheme has the following advantages: by at least one inductor of connecting between the signal end of the current/voltage unit of testing apparatus and the probe, because inductor has time-lag action when current break, be applied to two electrodes of element under test by the high-energy of delayed test equipment savings, make the current/voltage unit have enough time tests to go out to puncture current value, and make judgement by program, in time withdraw from test, thereby prevent the electrode burn of probe and element under test.
Technique scheme is by at least one inductor of connecting between the probe of testing apparatus and the element under test, because inductor has time-lag action when current break, be applied to two electrodes of element under test by the high-energy of delayed test equipment savings, make the current/voltage unit have enough time tests to go out to puncture current value, and make judgement by program, in time withdraw from test, thereby prevent the electrode burn of probe and element under test.
Description of drawings
Fig. 1 is the bigger capacitor of the test voltage breakdown of the prior art optical microscope picture on probe surface afterwards;
Fig. 2 is the bigger capacitor of the test voltage breakdown of the prior art optical microscope picture of probe tip needle surface afterwards;
Fig. 3 is the optical microscope picture of the less capacitor of the voltage breakdown of prior art through its electrode surface after the reliability testing;
Fig. 4 is the optical microscope picture of the bigger capacitor of the voltage breakdown of prior art through its electrode surface after the reliability testing;
Fig. 5 is the test structure synoptic diagram of one embodiment of the present of invention;
Fig. 6 is the test circuit of one embodiment of the present of invention;
Fig. 7 is voltage and the time relationship that adopts behind the inductor of test loop series connection 650mH of one embodiment of the invention;
Fig. 8 is voltage and the time relationship that adopts behind the inductor of test loop series connection 1H of one embodiment of the invention;
Fig. 9 is voltage and the time relationship that adopts behind the inductor of test loop series connection 2H of one embodiment of the invention.
Embodiment
The present invention is by at least one inductor of connecting between the electrode of the signal end of the current/voltage unit of testing apparatus and testing capacitor, because inductor has time-lag action when current break, be applied to two electrodes of element under test by the high-energy of delayed test equipment savings, make the current/voltage unit have enough time tests to go out to puncture current value, and make judgement by program, in time withdraw from test, thereby prevent the electrode burn of probe and element under test.
The present invention at first provides a kind of method of testing of reliability, comprising: element under test is provided, and described element under test has electrode; Testing apparatus is provided, and the signal end of the current/voltage unit of described testing apparatus links to each other with probe by at least one inductor; The probe of testing apparatus should be contacted with the electrode pair of element under test carry out reliability testing.
Be illustrated respectively with reference to the accompanying drawings.At first with reference to the accompanying drawings 5, provide the embodiment of test structure synoptic diagram of the reliability of a capacitor, comprising: Semiconductor substrate 100 is formed with the capacitor (not shown) on the described Semiconductor substrate 100, described capacitor has two electrodes, connects positive and negative electrode respectively; Two probe 101a, 101b of testing apparatus, probe 101a, the 101b of described testing apparatus should contact with the electrode pair of capacitor and carry out reliability testing; Inductor 103a, 103b, its two ends link to each other with the signal end (not shown) of the current/voltage unit of probe 101a, 101b and testing apparatus respectively by lead 102, and inductor 103a, 103b are at the signal end of node C by the current/voltage unit of lead 102 and testing apparatus in the present embodiment.
The voltage breakdown of described capacitor is relevant with the dielectric layer material and the physical thickness of capacitor, in actual process, usually unifiedly is " electrically thickness ", and described " electrically thickness " refers to that the physical thickness of dielectric layer of capacitor is divided by its relative dielectric constant.The voltage breakdown scope of capacitor is 30 to 200V in the present embodiment, and as an embodiment of the invention, described dielectric layer is a monox, and electrically thickness range is 20 to 2000nm.
Performances such as the insulativity of the dielectric layer of the voltage breakdown assessment capacitor of the described reliability testing of present embodiment by test capacitors, integrality.
The testing apparatus of present embodiment mainly comprises following components:
The current/voltage unit is used for the electric current of test capacitors and by probe 101a and 101b capacitor is applied voltage.Constitute test loop by probe 101a, capacitor (not shown), probe 101b and the series connection of current/voltage unit internal components, the electric current of the test capacitors of described current/voltage unit and apply two kinds of functions of voltage to capacitor and switch by internal switch;
Control module is used for control voltage source and applies the electric current of test capacitors of the mode of voltage and size and Control current voltage cell and the switching that applies two kinds of functions of voltage to capacitor on probe.When the current value of test exceeded the standard capacitor breakdown potential flow valuve of setting, control module cut off the voltage source of above-mentioned test loop, to end test;
Protective device is used for the voltage that cuts off above-mentioned test loop when voltage range exceeds the range of current/voltage unit being provided with, protects whole device.
Described inductor 103 is a spiral inductor, the difference of inductance value, difference time delay to circuit, it is fixed that the choosing of inductance value need be that the reaction velocity of testing apparatus is come according to the sensitivity of testing apparatus, if the sensitivity of testing apparatus is lower, then the measuring current time long and the current value that measures is longer with the time that standard capacitor breakdown potential flow valuve compares, need the delay long period.Because the testing apparatus reaction velocity causes the burning of electrode of probe and capacitor more slowly, can choose the bigger inductor of inductance value in order to prevent.In the present embodiment, the scope of described inductance value is 0.5H to 2.0H.
As an embodiment of present embodiment, the inductance value of described inductor can be respectively 0.5H, 0.8H, 1.1H, 1.3H, 1.5H, 1.8H, 2.0H.
Provide the concrete steps that adopt above-mentioned testing apparatus test capacitors reliability below: at first, in control program, with test specification, retention time, after parameters such as voltage spaces value (step) and standard capacitance breakdown potential flow valuve set in software, the current/voltage unit of testing apparatus applies an initial voltage (being generally the voltage spaces value) to capacitor, keep about 0.5s, simultaneously, the current value through capacitor of test loop is measured in the current/voltage unit, software will be measured the acquisition current value and standard capacitor breakdown potential flow valuve compares, if the current value of test loop is less than standard capacitor breakdown potential flow valuve, then software increases voltage by control module Control current voltage cell with voltage spaces value (step) speed.The rest may be inferred, and the current/voltage unit progressively increases the voltage that is applied to two electrodes of capacitor.
When voltage increases to capacitor breakdown, since the current value of the whole test loop of current/voltage unit measuring and software will measure the acquisition current value and standard capacitor breakdown potential flow valuve compares the process need certain hour, the present invention is by increasing inductor in test loop, the delayed current voltage cell applies the voltage of next time, testing apparatus is in time withdrawed from, and be maintained fixed voltage time and current/voltage unit testing loop current and program judgement time sum between in the current/voltage unit described time delay.In capacitor breakdown moment, electric current is bigger, and control module in time stops to apply voltage by control voltage source, has prevented that the electrode of capacitor and probe tip needle point from burning.
In the present embodiment, identical with the 103b inductance value with the inductor 103a of probe 101a, 101b series connection; Inductor 103a also can be different with the 103b inductance value in the practical operation; Also can be on probe 101a series reactor, and on probe 101b series reactor not; Simultaneously, the inductor 103a of series connection and/or 103b can be one, also can should not limit protection scope of the present invention at this for a plurality of.
Correspondingly, the present invention also provides a kind of testing apparatus of reliability, comprising: the current/voltage unit is used for applying voltage and test element under test two ends electric current to element under test; Probe should contact with the element under test electrode pair, and the signal end of described current/voltage unit links to each other with probe by at least one inductor.
The inductance value range of described inductor is 0.5H to 2H.
Technique scheme is by at least one inductor of connecting between the signal end of the current/voltage unit of testing apparatus and the probe, because inductor has time-lag action when current break, in capacitor breakdown moment, high-energy by delayed test equipment savings is applied to two electrodes of tested gate capacitance at once, make the current/voltage quantity of units have enough time tests to go out to puncture current value, and make judgement by program, in time withdraw from test, thereby the electrode that prevents probe and capacitor burns owing to crossing gathering of macro-energy.
The foregoing description is that example is illustrated with the reliability of test capacitors, also is applicable to other element, such as to resistor, variodenser or reliability testing that the integrality of grid medium layer of MOS transistor is carried out.Should too much not limit protection scope of the present invention at this.
The present invention also provides a kind of method of testing of reliability, comprising: element under test is provided, and described element under test has electrode; Testing apparatus is provided; The probe of testing apparatus should be linked to each other with the electrode pair of element under test by at least one inductor carry out reliability testing.
Reliability with test capacitors is that example is illustrated below.In the present embodiment, existing testing apparatus is not done change, but two electrodes of last capacitor that will be produced on Semiconductor substrate are in series with at least one inductor respectively, can reach the voltage that postpones to be applied on the capacitor equally, prevent to burn the technique effect of the electrode of probe and capacitor.The inductance value range of described inductor is 5H to 30H.The electrical thickness range of the dielectric layer of described capacitor is 20nm to 2000nm.The voltage breakdown scope of described capacitor is 30V to 200V.
In the present embodiment, the inductance value of the inductor that links with two electrodes of capacitor can be identical, also can be different, also can be on an electrode of capacitor series reactor, another electrode of capacitor is series reactor not; Simultaneously, the inductor of series connection can be one, also can should not limit protection scope of the present invention at this for a plurality of.
Technique scheme is by at least one inductor of connecting between the electrode of probe and testing capacitor, because inductor has time-lag action when electric current changes, high-energy by delayed test equipment savings is applied to measured capacitance device two-stage at once, in capacitor breakdown moment, make the current/voltage unit have the enough time to measure the breakdown potential flow valuve, and make judgement by program, in time withdraw from test, thereby the electrode that prevents probe and capacitor burns owing to crossing gathering of macro-energy.
Technique scheme is that example is illustrated with the reliability of test capacitors, also is applicable to other element, such as to resistor, variodenser or reliability testing that the integrality of grid medium layer of MOS transistor is carried out.Should too much not limit protection scope of the present invention at this.
Fig. 6 provides the test circuit that adopts technique scheme, comprising: capacitor C1 to be tested, an end ground connection of capacitor C 1; Resistance R 1 and R2 are connected on the two ends of capacitor C1 respectively, are the equivalent resistance of probe, lead and inductor L1 and L2, and this value is smaller; Inductor L1 and inductor L2 are connected on the node C place between resistance R 1 and R2 and the current/voltage unit respectively; Be connected in the reometer A between the node C, be a part of the current/voltage unit of testing apparatus, be used to test the electric current of whole test loop, simultaneously, between node C, be applied with a voltage (not shown).
Fig. 7 to Fig. 9 provides and adopts under the foregoing circuit different induction value, through B point voltage and time relation behind the inductor L1.At first, with reference to accompanying drawing 7, the inductance value of inductor is 650mH, the electric potential difference at node C two ends is 55V, as seen from Figure 7, do not reach 50V as yet through 5ms, promptly be applied to voltage on the capacitor C1 less than 50V through the B point voltage behind the inductor, show in test loop and behind the adding inductor, can postpone to be applied to the voltage on the capacitor.
The inductor current value of inductor is 1H among Fig. 8, the electric potential difference at node A two ends is 55V, as seen from Figure 8, do not reach 45V through the B point voltage behind the inductor as yet through 5ms, promptly be applied to voltage on the capacitor C1 less than 45V, show in test loop and behind the adding inductor, can postpone to be applied to the voltage on the capacitor.
The inductance value of inductor is 2H among Fig. 9, the electric potential difference at node A two ends is 55V, as seen from Figure 9, do not reach 35V through the B point voltage behind the inductor as yet through 5ms, promptly be applied to voltage on the capacitor C1 less than 35V, show in test loop and behind the adding inductor, can postpone to be applied to the voltage on the capacitor.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.

Claims (5)

1. the method for testing of a reliability is characterized in that, comprising:
Element under test is provided, and described element under test has positive and negative electrode, and described element under test is a capacitor;
Testing apparatus is provided, comprises:
The current/voltage unit is used for element under test is applied voltage and the electric current of testing described element under test;
A pair of probe is respectively with the corresponding contact of positive and negative electrode of described element under test;
Inductor is connected between described current/voltage unit and the probe, when element under test breakdown moment produces current break, applies next time voltage in element under test in order to postpone described current/voltage unit, prevents that testing apparatus from burning;
Testing apparatus progressively applies voltage to element under test, the corresponding current value of measuring through element under test in described current/voltage unit;
More described measurement current value and standard breakdown potential flow valuve if measure current value overgauge breakdown potential flow valuve, then stop to apply voltage next time, end of test.
2. the method for testing of reliability according to claim 1 is characterized in that, the switching that the side element applies voltage and two kinds of functions of test element under test electric current is realized treating by switch in described current/voltage unit.
3. the method for testing of reliability according to claim 1 is characterized in that, the inductance value range of described inductor is 0.5 to 2H.
4. testing apparatus that is used for the reliability of claim 1 comprises:
The current/voltage unit is used for element under test is applied voltage and the electric current of testing element under test, and described element under test is a capacitor;
A pair of probe should contact with the electrode pair of described element under test respectively;
Inductor is connected between described current/voltage unit and the probe, when element under test breakdown moment produces current break, applies next time voltage in element under test in order to postpone described current/voltage unit, prevents that testing apparatus from burning;
And control module, by current value and the standard breakdown potential flow valuve size of judging described element under test, whether decision stops test.
5. the testing apparatus of reliability according to claim 4 is characterized in that, the inductance value range of described inductor is 0.5 to 2H.
CN 200710042199 2007-06-11 2007-06-11 Method and device for testing reliability Expired - Fee Related CN101324652B (en)

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Publication number Priority date Publication date Assignee Title
CN103018500A (en) * 2012-11-29 2013-04-03 上海华力微电子有限公司 Device for preventing probe on semi-automatic probe station from being burnt
CN103777134B (en) * 2014-02-18 2017-04-19 迈普通信技术股份有限公司 Chip reliability testing method and system for differential clock signal
CN106291276A (en) * 2016-07-28 2017-01-04 上海华力微电子有限公司 A kind of medium time breakdown for parallel test system tests device
CN107064719B (en) * 2017-06-02 2023-09-19 北京华峰测控技术有限公司 Kelvin connection fault detection circuit and method
JP7219045B2 (en) * 2018-10-12 2023-02-07 株式会社アドバンテスト Analysis device, analysis method and analysis program

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CN1477691A (en) * 2002-07-23 2004-02-25 富士通株式会社 Method for testing probe board and semiconductor chip, capacitor and mfg. method thereof
US20040100277A1 (en) * 2002-11-13 2004-05-27 Tam Kent Kinman Non-contact surface conductivity measurement probe
CN1512186A (en) * 2002-10-02 2004-07-14 ��ʽ���������Ƽ� Probe sheet, probe card, semiconductor detector and method for producing semiconductor device

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Publication number Priority date Publication date Assignee Title
CN1477691A (en) * 2002-07-23 2004-02-25 富士通株式会社 Method for testing probe board and semiconductor chip, capacitor and mfg. method thereof
CN1512186A (en) * 2002-10-02 2004-07-14 ��ʽ���������Ƽ� Probe sheet, probe card, semiconductor detector and method for producing semiconductor device
US20040100277A1 (en) * 2002-11-13 2004-05-27 Tam Kent Kinman Non-contact surface conductivity measurement probe

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