CN101353269B - Preparation of carbon/silicon carbide composite material surface refractory coating - Google Patents
Preparation of carbon/silicon carbide composite material surface refractory coating Download PDFInfo
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Abstract
The invention discloses a preparation method for a surface high-temperature coating of carbon/carborundum composite materials. The method comprises the following steps: zirconium metal powder and iodine powder respectively carry out ball mill to obtain Zr-I2 mixed powder; C/SiC composite material is ground and polished, and then washed and dried; SiC coating and pyrolytic carbon coating are deposited on the C/SiC composite material; then the obtained C/SiC composite material is embedded in the Zr-I2 mixed powder, then sealed by a three-layer stainless steel container, the three-layer sealed stainless steel container is treated by heat at the temperature of 850-1,100 DEG C for 5-30 hours under the protection of argon gas in a high temperature furnace, then cooled to the room temperature along with the furnace; the layers are respectively opened in a control box under the protection of the argon gas, the prepared product is taken out. In the invention, the coating is prepared by adding iodine to refractory metal powder; as the coating is formed by the reaction between the refractory metal powder and matrix, a good bonding interface between the refractory metal powder and the matrix is formed, and the thickness of the prepared Zr-Si-C coating is increased to 2-10 microns from 0.1-0.2 micron in the prior art.
Description
Technical field
The present invention relates to a kind of preparation method of composite material surface refractory coating.
Background technology
SiC have about 2500 ℃ HMP, excellent high-temperature mechanical property as the matrix of C/SiC matrix material and coated material and in oxidative environment up to 1650 ℃ good oxidation resistance ability.The SiO that the SiC surface oxidation generates
2Film can prevent the further promote the oxidation of SiC.More than 1650 ℃, SiC is initiatively oxidation by passive oxidotranstormation in air, makes it no longer have defencive function, and the SiC coating begins decay.A new generation's hypersonic aircraft require the working temperature of thermal protection struc ture member can reach more than 1650 ℃ in addition higher, the time length is longer, only depends on SiC matrix and coating can't meet the demands.
Summary of the invention
Combine weak deficiency between the ZrC coating that overcomes prior art for preparing and matrix; The present invention provides a kind of preparation method of carbon/carbon/silicon carbide composite material surface refractory coating; Be employed in the refractory metal powder and add iodine and prepare coating; Because coating is generated by reaction between refractory metal powder and the matrix, making has the good binding interface between coating and matrix.
The technical solution adopted for the present invention to solve the technical problems: a kind of preparation method of carbon/carbon/silicon carbide composite material surface refractory coating is characterized in comprising the steps:
(a) take by weighing the metal zirconium powder that mass percent is 97～98wt.% respectively; Mass percent is the iodine powder of 2～3wt.%, and metal zirconium powder and iodine powder are packed in the ceramic pot, and adopting the corundum ball is abrading-ball; Ball milling is 5～30 minutes on the planetary type ball-milling appearance, the preparation mixed powder;
(b) back is thrown in the polishing of C/SiC matrix material and use absolute ethanol washing, oven dry;
(c) with the trichloromethyl silane be the source material, argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1, adopts chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating earlier, and depositing temperature is 1000～1100 ℃; Depositing time is 20～100 hours; Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON again, depositing temperature is 800～880 ℃, and depositing time is 50～90 hours;
(d) will be positioned in the stainless steel vessel through half of the mixed powder of step (a) preparation; Put into the C/SiC matrix material of handling through step (c); Put into second half mixed powder again and cover, seal stainless steel vessel then, seal two stainless steel vessels in the stainless steel vessel outside more respectively;
(e) will cool to room temperature then with the furnace through 850～1100 ℃ of thermal treatment 5～30 hours under the argon atmospher protection in High Temperature Furnaces Heating Apparatus of three-layer sealed stainless steel vessel;
(f) will in the operation box of the heat treated stainless steel vessel of step (e), divide layer open, take out product in argon shield.
The invention has the beneficial effects as follows: refractory metal is with the form diffusion of gaseous state iodide in the inventive method, and iodine serves as the carrier of gaseous metal atom, metal and I
2Between reaction form metal iodide gas; The metal iodide gaseous diffusion generates ZrC coating or Zr-Si-C coating to C coating or the reaction of SiC coatingsurface, compares with prior art, because coating is generated by reaction between refractory metal powder and the matrix material; Having good interface between Zr-Si-C coating and the SiC coating combines; Adopt the pressurize 15 seconds on coating of Vickers' hardness appearance 10Kg ballast, coating does not come off, and explains between coating and the C/SiC to have good binding.Compare with prior art, the Zr-Si-C coating of the present invention preparation is brought up to 2～10 microns by 0.1～0.2 micron of prior art.
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
Description of drawings
Fig. 1 is the synoptic diagram that the inventive method prepares ZrC coating or Zr-Si-C coating.
Fig. 2 be in the embodiment of the invention 2 the C/SiC matrix material at Zr-1wt.%I
2The fracture apperance stereoscan photograph of the Zr-Si-C coating of 1000 ℃ of thermal treatment 8h formation in the powder.
Fig. 3 be in the embodiment of the invention 5 the C/SiC matrix material at Zr-1wt.%I
2The Zr-Si-C coating that 1050 ℃ of thermal treatment 25h form in the powder the fracture apperance stereoscan photograph.
Fig. 4 is the Zr-Si-C coating XRD figure spectrum that the SiC surface reaction forms in the embodiment of the invention 5.
Among the figure, the outer stainless steel vessel of 1-, 2-middle level stainless steel vessel, 3-internal layer stainless steel vessel, 4-C/SiC matrix material, 5-Zr-I
2Mixed powder.
Embodiment
Embodiment 1: taking by weighing mass percent respectively is the Zr powder of 99wt.%, the I of 1wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 5 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1000 ℃, and depositing time is 20 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 800 ℃, and depositing time is 50 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.1 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 5 hours in 850 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
Through detecting, gained Zr-Si-C coat-thickness is 2 microns, and the coating internal layer is that ZrC, middle layer are Zr
2Si-ZrC
0.7Complex phase district, skin are ZrC
0.7
Embodiment 2: taking by weighing mass percent respectively is the Zr powder of 99wt.%, the I of 1wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 10 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1025 ℃, and depositing time is 40 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 820 ℃, and depositing time is 60 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.2 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 8 hours in 1000 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
Fracture apperance stereoscan photograph by the Zr-Si-C coating of Fig. 2 can find out that the high-temperaure coating of present embodiment preparation is by ZrC and Zr
2Si forms, and the coating internal layer is that ZrC, middle layer are Zr
2Si-ZrC
0.7Complex phase district, skin are ZrC
0.7Through detecting, gained Zr-Si-C coat-thickness is 5 microns.
Embodiment 3: taking by weighing mass percent respectively is the Zr powder of 97wt.%, the I of 3wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 15 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1050 ℃, and depositing time is 50 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 840 ℃, and depositing time is 70 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.2 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 15 hours in 950 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
Through detecting, gained Zr-Si-C coat-thickness is 7 microns, by ZrC and Zr
2Si forms, and the coating internal layer is that ZrC, middle layer are Zr
2Si-ZrC
0.7Complex phase district, skin are ZrC
0.7
Embodiment 4: taking by weighing mass percent respectively is the Zr powder of 97wt.%, the I of 3wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 20 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1075 ℃, and depositing time is 60 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 860 ℃, and depositing time is 80 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.2 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 20 hours in 1000 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
Through detecting, the gained coat-thickness is 10 microns, by ZrC and Zr
2Si forms, and the coating internal layer is that ZrC, middle layer are Zr
2Si-ZrC
0.7Complex phase district, skin are ZrC
0.7
Embodiment 5: taking by weighing mass percent respectively is the Zr powder of 99wt.%, the I of 1wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 25 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1050 ℃, and depositing time is 80 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 880 ℃, and depositing time is 90 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.2 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 25 hours in 1050 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
By Zr-Si-C coating shown in Figure 3 the fracture apperance stereoscan photograph can find out that the high-temperaure coating thickness of present embodiment preparation is 4 microns.Zr-Si-C coating XRD figure spectrum by Fig. 4 can find out that coating is by ZrC
1-xAnd Zr
2Si forms, and the detected Zr of XRD is the residual Zr powder attached to coatingsurface.
Embodiment 6: taking by weighing mass percent respectively is the Zr powder of 98wt.%, the I of 2wt.%
2Powder.The purity of Zr powder is 99.8%, and granularity is 100 microns; The purity of iodine powder is 99.5%, and granularity is 300 microns.With Zr powder and I
2Powder is packed in the ceramic pot and adopted the corundum ball is abrading-ball, and ball milling is 30 minutes on the planetary type ball-milling appearance, becomes Zr-I
2Mixed powder.With clean behind the C/SiC matrix material sanding and polishing with absolute ethanol washing, dry for standby in 100 ℃ of baking ovens.With the trichloromethyl silane is the source material, and argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1; Adopt chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating, depositing temperature is 1100 ℃, and depositing time is 100 hours.Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON, depositing temperature is 900 ℃, and depositing time is 100 hours.With Zr-I
2Half of mixed powder 5 is positioned in the internal layer stainless steel vessel 3, puts into through the C/SiC of above step process matrix material 4, puts into second half Zr-I again
2Mixed powder covers, and seals internal layer stainless steel vessel 3 then.Seal middle level stainless steel vessel 2 and outer stainless steel vessel 1 more respectively in internal layer stainless steel vessel 3 outsides.The wall thickness of three stainless steel vessels is 0.3 millimeter, and the stainless steel vessel wall can stop the impurity of being come in by diffusion in the atmosphere, and stops I
2To external diffusion.To cool to room temperature then with the furnace through the thermal treatment 30 hours in 1100 ℃ of argon gas of the sealing stainless steel vessel of above step preparation.To in the operation box of the heat treated sealing stainless steel vessel of above step, open, take out sample, and the Zr powder in the stainless steel vessel packed into reclaim in the sealed vessel in argon shield.
After testing, coating is the ZrC coating, and coating layer thickness is 8 microns.
Claims (3)
1. the preparation method of a carbon/carbon/silicon carbide composite material surface refractory coating is characterized in that comprising the steps:
(a) take by weighing the metal zirconium powder that mass percent is 97～98wt.% respectively; Mass percent is the iodine powder of 2～3wt.%, and metal zirconium powder and iodine powder are packed in the ceramic pot, and adopting the corundum ball is abrading-ball; Ball milling is 5～30 minutes on the planetary type ball-milling appearance, the preparation mixed powder;
(b) back is thrown in the polishing of C/SiC matrix material and use absolute ethanol washing, oven dry;
(c) with the trichloromethyl silane be the source material, argon gas is a diluents, and hydrogen is carrier gas; The mol ratio of hydrogen and trichloromethyl silane is 10: 1, adopts chemical Vapor deposition process on the C/SiC matrix material, to deposit the SiC coating earlier, and depositing temperature is 1000～1100 ℃; Depositing time is 20～100 hours; Adopt chemical Vapor deposition process on SiC coating C/SiC matrix material, to deposit RESEARCH OF PYROCARBON again, depositing temperature is 800～880 ℃, and depositing time is 50～90 hours;
(d) will be positioned in the stainless steel vessel through half of the mixed powder of step (a) preparation; Put into the C/SiC matrix material of handling through step (c); Put into second half mixed powder again and cover, seal stainless steel vessel then, seal two stainless steel vessels in the stainless steel vessel outside more respectively;
(e) will cool to room temperature then with the furnace through 850～1100 ℃ of thermal treatment 5～30 hours under the argon atmospher protection in High Temperature Furnaces Heating Apparatus of three-layer sealed stainless steel vessel;
(f) will in the operation box of the heat treated stainless steel vessel of step (e), divide layer open, take out product in argon shield.
2. the preparation method of carbon/carbon/silicon carbide composite material surface refractory coating according to claim 1, it is characterized in that: described metal zirconium powder, its purity are 99.8%, granularity is 100 microns.
3. the preparation method of carbon/carbon/silicon carbide composite material surface refractory coating according to claim 1, it is characterized in that: described iodine powder, its purity are 99.5%, granularity is 300 microns.
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| CN103288494B (en) * | 2013-05-16 | 2014-10-15 | 长安大学 | Method for preparing titanium metal coating on ceramic surface |
| CN103722825A (en) * | 2013-09-11 | 2014-04-16 | 太仓派欧技术咨询服务有限公司 | Preparation method of ceramic matrix composite with Sic on surface layer and ZrC on inner layer |
| CN103738012A (en) * | 2013-09-11 | 2014-04-23 | 太仓派欧技术咨询服务有限公司 | Preparation method of ceramic matrix composite material with SiC/ZrC laminated distribution |
| CN104831351A (en) * | 2015-05-29 | 2015-08-12 | 西安鑫垚陶瓷复合材料有限公司 | Crucible cover plate for polysilicon ingot furnace and cover plate surface coating method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4950558A (en) * | 1987-10-01 | 1990-08-21 | Gte Laboratories Incorporated | Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof |
| CN1439742A (en) * | 2003-03-27 | 2003-09-03 | 厦门大学 | Metal surface anti-corrosion method based on surface nanometer construct |
| CN1544690A (en) * | 2003-11-27 | 2004-11-10 | 上海交通大学 | Process for preparing single crystal silicon substrate surface self-assembly rare earth nano-film |
| CN101033137A (en) * | 2007-02-06 | 2007-09-12 | 西北工业大学 | Method of preparing carbon/carbon-silicon carbide ceramics base composite material |
-
2008
- 2008-07-17 CN CN2008101503727A patent/CN101353269B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4950558A (en) * | 1987-10-01 | 1990-08-21 | Gte Laboratories Incorporated | Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof |
| CN1439742A (en) * | 2003-03-27 | 2003-09-03 | 厦门大学 | Metal surface anti-corrosion method based on surface nanometer construct |
| CN1544690A (en) * | 2003-11-27 | 2004-11-10 | 上海交通大学 | Process for preparing single crystal silicon substrate surface self-assembly rare earth nano-film |
| CN101033137A (en) * | 2007-02-06 | 2007-09-12 | 西北工业大学 | Method of preparing carbon/carbon-silicon carbide ceramics base composite material |
Non-Patent Citations (1)
| Title |
|---|
| 殷小玮.化学气相反应法制备Zr-Si-C涂层.《硅酸盐学报》.2007,第35卷(第11期), * |
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