CN101354963B - Method for preparing high backward voltage capacitor - Google Patents
Method for preparing high backward voltage capacitor Download PDFInfo
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- CN101354963B CN101354963B CN2008100689127A CN200810068912A CN101354963B CN 101354963 B CN101354963 B CN 101354963B CN 2008100689127 A CN2008100689127 A CN 2008100689127A CN 200810068912 A CN200810068912 A CN 200810068912A CN 101354963 B CN101354963 B CN 101354963B
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Abstract
The invention discloses a preparation method for a high reverse voltage capacitor, which belongs to a capacitor manufacturing method. The invention aims at providing a manufacturing method for a capacitor capable of bearing a reverse voltage and a great ripple current. The method comprises the following steps of: dipping an anode tantalum barrel into a dilute sulfuric acid solution with a pH value of 6.5-7.0 and a temperature of 70-90 DEG C, and applying a direct current with a voltage of 9-20V for 60-120 minutes; taking the anode tantalum barrel out, and then cleaning and drying the tantalumbarrel; welding the anode tantalum barrel into a metal casing of the capacitor; injecting a sulphuric acid solution with a volume percentage concentration of 30-40 percent or a nitric acid solution with a volume percentage concentration of 10-20 percent, and applying a direct current with a voltage of 9-20V for 10-30 minutes; and pouring out the sulphuric acid solution or the nitric acid solution, cleaning the capacitor with deionized water, and drying the capacitor. The capacitor can not only bear a reserve voltage of 3-10V, but also bear a ripple current of 1.1A for above 1,000 hours. The capacitor is an indispensable electronic element in a power filter circuit.
Description
Technical field: the present invention relates to a kind of manufacture method of electrolytic capacitor, relate in particular to a kind of preparation method of electrolytic capacitor anodized film.
Background technology: electrolytic capacitor is one of electronic component that is most widely used.At present, the manufacture method of tantalum electrolytic capacitor is: will immerse in the acidic aqueous solution through the anode tantalum piece of high-temperature vacuum sintering and carry out electrochemical treatments, make the surface of this anode tantalum piece form one deck tantalum pentoxide working media film, to weld encapsulation in the packaged metal shell of going into to fill liquid state or gel working electrolyte of this anode tantalum then, anode lead wire is gone up in welding at last.The tantalum electrolytic capacitor of this conventional method manufacturing can not bear reverse voltage, otherwise the working media film of capacitor is subject to and destroys and lost efficacy, and capacitor can breakdown or blast when serious, causes device damage.
Summary of the invention: at the above-mentioned defective that exists in the prior art, the present invention aims to provide a kind of preparation method of high backward voltage capacitor, utilizes the electrolytic capacitor of this method manufacturing can bear the reverse voltage of 3～10V.
To achieve these goals, the technical solution used in the present invention is as follows:
1) it is that 70～90 ℃, pH value are in 6.5～7.0 the dilution heat of sulfuric acid, to pass to 9～20V direct current 60～120 minutes that the anode tantalum tube conventional method made immerses temperature;
2) oven dry is cleaned in above-mentioned anode tantalum tube taking-up;
3) the described anode tantalum tube after will drying is pressed in the metal shell of capacitor, and welding is fixing;
4) injecting concentration expressed in percentage by volume in above-mentioned metal shell is that 30～40% sulfuric acid solution or concentration expressed in percentage by volume are 10～20% salpeter solution, passes to 9～20V direct current 10～30 minutes;
5) sulfuric acid in the described metal shell or salpeter solution are poured out, this metal shell is cleaned, oven dry with deionized water.
Compared with the prior art, the present invention is owing to adopted twice electrochemical oxidation to form technology, therefore the electrolytic capacitor that adopts the present invention to make can overcome the destruction of reverse voltage to capacitor working media film, has improved the ability that capacitor bears reverse voltage significantly; Its inverse peak voltage that can bear is 60% of an anode tantalum tube working media film formation voltage.In addition, adopt the electrolytic capacitor of manufacturing of the present invention under big ripple current, to work thousands of hours.
Below be to adopt tantalum electrolytic capacitor that the specification of the inventive method manufacturing is respectively 50V47 μ F, 125V56 μ F applying 9 volts direct current reverse voltages measured electrical performance test parameter after 125 hours under 85 ℃ the condition, and the specification of the employing the inventive method manufacturing tantalum electrolytic capacitor that is respectively 50V47 μ F, 125V56 μ F is applying 1.1A ripple current measured electrical performance test parameter after 1000 hours under 85 ℃ the condition:
Table 1:50V47 μ F reverse voltage test data
| Parameter name | Capacitance (μ F) | Loss | Leakage current (μ A) |
| Standard value | 42.3～51.7 | ≤0.1 | ≤1 |
| Before the test | 46.6～48.3 | 0.031～0.036 | 0.17～0.23 |
| After the test | 46.9～48.7 | 0.035～0.039 | 0.37～0.41 |
Table 2:125V56 μ F reverse voltage test data
| Parameter name | Capacitance (μ F) | Loss | Leakage current (μ A) |
| Standard value | 50.4～61.6 | ≤0.065 | ≤10 |
| Before the test | 56.6～58.1 | 0.019～0.022 | 0.7～1.2 |
| After the test | 57.2～59.0 | 0.020～0.027 | 1.1～1.6 |
Table 3:50V47 μ F ripple current test data
| Parameter name | Capacitance (μ F) | Loss | Leakage current (μ A) |
| Standard value | 42.3～51.7 | ≤0.1 | ≤1 |
| Before the test | 45.88～48.26 | 0.029～0.041 | 0.11～0.29 |
| After the test | 46.77～50.9 | 0.028～0.04 | 0.07～0.19 |
Table 4:125V56 μ F ripple current test data
| Parameter name | Capacitance (μ F) | Loss | Leakage current (μ A) |
| Standard value | 50.4～61.6 | ≤0.065 | ≤10 |
| Before the test | 56.21～58.50 | 0.015～0.019 | 0.8～1.8 |
| After the test | 54.67～60.77 | 0.016～0.021 | 0.63～1.7 |
From above-mentioned test data as can be seen, apply reverse voltage or apply after the ripple current, every electrical quantity technical indicators such as the capacitance of capacitor, loss and leakage current almost do not change, illustrate that the tantalum electrolytic capacitor that adopts manufacturing of the present invention not only can bear the reverse voltage of 3～10V, can also under big ripple current, work more than 1000 hours.
Embodiment: the invention will be further described below in conjunction with specific embodiment:
Embodiment 1
1. it is that 70 ℃, pH value are that positive source connects described anode tantalum tube, power cathode connects dilution heat of sulfuric acid, feeds the 9V direct current 60 minutes in 6.5 the dilution heat of sulfuric acid that the anode tantalum tube conventional method made immerses temperature;
2. above-mentioned anode tantalum tube is taken out and clean oven dry;
3. the described anode tantalum tube after will drying is pressed in the metal shell of capacitor, and welding is fixing;
4. inject concentration expressed in percentage by volume and be 30% sulfuric acid solution in above-mentioned metal shell, positive source connects described metal shell, power cathode inserts dilution heat of sulfuric acid, feeds the 9V direct current 10 minutes;
5. sulfuric acid in the described metal shell or salpeter solution are poured out, this metal shell is cleaned, oven dry with deionized water.
Embodiment 2
Each step is with embodiment 1; Wherein, the pH value of the dilution heat of sulfuric acid of step in 1. is 7.0, temperature is 90 ℃, and be that 120 minutes, voltage are 20V conduction time; Step 4. in the concentration of sulfuric acid solution be 40%, be that 30 minutes, voltage are 20V conduction time.
Embodiment 3
Each step is with embodiment 1; Wherein, the pH value of the dilution heat of sulfuric acid of step in 1. is 6.7, temperature is 80 ℃, and be that 90 minutes, voltage are 14V conduction time; Step 4. in the concentration of sulfuric acid solution be 35%, be that 20 minutes, voltage are 14V conduction time.
Embodiment 4
Each step is with embodiment 1; Wherein, the pH value of the dilution heat of sulfuric acid of step in 1. is 6.6, temperature is 75 ℃, and be that 75 minutes, voltage are 12V conduction time; Step 4. in the concentration of sulfuric acid solution be 32%, be that 15 minutes, voltage are 12V conduction time.
Embodiment 5
Each step is with embodiment 1; Wherein, the pH value of the dilution heat of sulfuric acid of step in 1. is 6.8, temperature is 85 ℃, and be that 105 minutes, voltage are 17V conduction time; Step 4. in the concentration of sulfuric acid solution be 38%, be that 25 minutes, voltage are 17V conduction time.
Embodiment 6
Each step is with embodiment 1; Wherein, be that to substitute concentration be 30% sulfuric acid solution for 10% salpeter solution in step in 4. with concentration expressed in percentage by volume.
Embodiment 7
Each step is with embodiment 2; Wherein, be that to substitute concentration be 40% sulfuric acid solution for 20% salpeter solution in step in 4. with concentration expressed in percentage by volume.
Embodiment 8
Each step is with embodiment 3; Wherein, be that to substitute concentration be 35% sulfuric acid solution for 15% salpeter solution in step in 4. with concentration expressed in percentage by volume.
Embodiment 9
Each step is with embodiment 4; Wherein, be that to substitute concentration be 32% sulfuric acid solution for 12% salpeter solution in step in 4. with concentration expressed in percentage by volume.
Embodiment 10
Each step is with embodiment 5; Wherein, be that to substitute concentration be 38% sulfuric acid solution for 18% salpeter solution in step in 4. with concentration expressed in percentage by volume.
Claims (1)
1. the preparation method of a high backward voltage capacitor is characterized in that concrete steps are as follows:
1) it is that 70～90 ℃, pH value are in 6.5～7.0 the dilution heat of sulfuric acid, to pass to 9～20V direct current 60～120 minutes that the anode tantalum tube conventional method made immerses temperature;
2) oven dry is cleaned in above-mentioned anode tantalum tube taking-up;
3) the described anode tantalum tube after will drying is pressed in the metal shell of capacitor, and welding is fixing;
4) injecting concentration expressed in percentage by volume in above-mentioned metal shell is that 30～40% sulfuric acid solution or concentration expressed in percentage by volume are 10～20% salpeter solution, passes to 9～20V direct current 10～30 minutes;
5) sulfuric acid in the described metal shell or salpeter solution are poured out, this metal shell is cleaned, oven dry with deionized water.
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| CN2008100689127A CN101354963B (en) | 2008-09-16 | 2008-09-16 | Method for preparing high backward voltage capacitor |
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| CN2008100689127A CN101354963B (en) | 2008-09-16 | 2008-09-16 | Method for preparing high backward voltage capacitor |
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| CN101354963B true CN101354963B (en) | 2011-04-06 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102605408B (en) * | 2011-10-11 | 2015-09-30 | 中国科学院合肥物质科学研究院 | A kind of Ta of various colors 2o 5nano thin-film regulate and control method |
| CN102634837A (en) * | 2012-04-05 | 2012-08-15 | 上海市计量测试技术研究院 | Preparation method of standard tantalum oxide film |
| CN103021681B (en) * | 2012-12-27 | 2016-03-16 | 株洲日望电子科技股份有限公司 | A kind of shaped device of annular tantalum cathode cylinder and forming method |
| CN106206029B (en) * | 2016-08-14 | 2018-06-05 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of low temperature forming method of chip tantalum capacitor anode |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB675353A (en) * | 1950-11-28 | 1952-07-09 | P R Mallory & Company Inc | Electrolytic capacitor |
| US3120695A (en) * | 1957-11-18 | 1964-02-11 | Burnham John | Electrolytic capacitors |
| US3541399A (en) * | 1965-05-27 | 1970-11-17 | Philips Corp | Non-polar electrolytic capacitor containing a salt of an oxidizing acid |
| US3993938A (en) * | 1974-07-17 | 1976-11-23 | Corning Glass Works | Electrical component hermetic enclosure |
| EP0753869A2 (en) * | 1995-07-13 | 1997-01-15 | Avx Corporation | Selective anodization of capacitor anode body |
| US5777840A (en) * | 1996-10-29 | 1998-07-07 | Yosemite Investment, Inc. | Non polar tantalum capacitor |
| CN1694198A (en) * | 2005-05-18 | 2005-11-09 | 中国振华（集团）新云电子元器件有限责任公司 | High backward voltage resistance capacitor |
-
2008
- 2008-09-16 CN CN2008100689127A patent/CN101354963B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB675353A (en) * | 1950-11-28 | 1952-07-09 | P R Mallory & Company Inc | Electrolytic capacitor |
| US3120695A (en) * | 1957-11-18 | 1964-02-11 | Burnham John | Electrolytic capacitors |
| US3541399A (en) * | 1965-05-27 | 1970-11-17 | Philips Corp | Non-polar electrolytic capacitor containing a salt of an oxidizing acid |
| US3993938A (en) * | 1974-07-17 | 1976-11-23 | Corning Glass Works | Electrical component hermetic enclosure |
| EP0753869A2 (en) * | 1995-07-13 | 1997-01-15 | Avx Corporation | Selective anodization of capacitor anode body |
| US5777840A (en) * | 1996-10-29 | 1998-07-07 | Yosemite Investment, Inc. | Non polar tantalum capacitor |
| CN1694198A (en) * | 2005-05-18 | 2005-11-09 | 中国振华（集团）新云电子元器件有限责任公司 | High backward voltage resistance capacitor |
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