CN101356702B - Surface-emitting laser array, optical scanning device, and image forming device - Google Patents
Surface-emitting laser array, optical scanning device, and image forming device Download PDFInfo
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- CN101356702B CN101356702B CN2007800014074A CN200780001407A CN101356702B CN 101356702 B CN101356702 B CN 101356702B CN 2007800014074 A CN2007800014074 A CN 2007800014074A CN 200780001407 A CN200780001407 A CN 200780001407A CN 101356702 B CN101356702 B CN 101356702B
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Abstract
A surface-emitting laser array includes a plurality of surface-emitting laser elements (1). Each surface-emitting laser element includes a first reflection layer (102) formed on a substrate (101), a resonator cavity (103, 104, 105) formed in contact with the first reflection layer and containing an active layer (104), and a second reflection layer (106, 107) formed over the first reflection layer and in contact with the resonator cavity. The second reflection layer contains a selective oxidation layer (107). The first reflection layer contains on the active layer side at least a low refractive index layer (1021), made e.g. of AlAs, having an oxidation rate equivalent to or larger than an oxidation rate of the selective oxidation layer (107) contained in the second reflection layer. The resonator cavity is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located below the selective oxidation layer and above the first reflection layer.
Description
Technical field
The present invention relates to surface-emitting laser array, comprise the optical scanner of this surface-emitting laser array and the image processing system that comprises this surface-emitting laser array.
Background technology
Integrated therein in the surface-emitting laser array of surface emitting laser element, the output meeting of each surface emitting laser element reduces owing to rising by the temperature that absorbs heat from circumferential surface emitting laser element when work, and the life-span of surface-emitting laser array can shorten.
In order to overcome this problem, need improve the heat dissipation characteristic.For example, the material with high heat conductance should be used to the semiconductor Bragg reflector, and it places on the side of main heat dissipation.At the material of the semiconductor Bragg reflector that can be used for GaAs upper surface of base plate emitting laser element, AlAs is one of suitable material that has high heat conductance.
Yet, have such situation, carry out be etched with form platform (mesa) thus the shape of structure is separated on surface emitting laser element and peripheral part electricity or the space.In this case, do not arrive the following semiconductor Bragg reflector that is arranged on the substrate-side, arrive semiconductor Bragg reflector down, consider that the problem of etching controllability is implemented design by hypothesis etching bottom although require this etching.
For example, for the situation of oxide surface emitting laser element, comparing with selective oxide layer (selective oxidation layer) needs etching darker in to carry out selective oxidation.For the purpose that prevents that electric current from disperseing, usually selective oxide layer is arranged near the position the active layer (the perhaps semiconductor Bragg reflector of active layer top) of p N-type semiconductor N Bragg reflector, perhaps in position from first to the 5th node of active layer (field intensity of laser beam distribute node).
Yet, consider the controllability problem of etch depth, be difficult to control the etching bottom than selective oxidation layer depth but do not arrive second conductor Bragg reflector.
In order to control the etch depth in the entire wafer surface, require not only to control etching period, but also will obtain etched uniformity in the wafer surface, and the uniformity of crystalline growth layer thickness profile.In fact, the enforcement platform is etched with to be deeper than selective oxide layer but not arrive second conductor Bragg reflector and is difficult to.
In order to address this problem, the spy opens the 2002-164621 communique and has disclosed that will to play the semiconductor Bragg reflector to be separated into two-layer.Open in the laser array of 2002-164621 communique the spy, one of substrate-side of two following semiconductor Bragg reflector layers is the principal refractive index layer, and it is to be made by AlAs.The AlAs thermal conductivity far is greater than the AlGaAs thermal conductivity.On the other hand, active layer side reflector layer is to be made by AlGaAs commonly used.
Yet for the situation of surface-emitting laser array, for other additional reason, it is more difficult to implement uniform platform etching in the surface of wafer.If the interelement gap turn narrow of surface emitting laser element is to implement to have highdensity arranged in arrays, then the discrepancy delta d between the etch depth of the peripheral par of the etch depth in interelement gap and surface-emitting laser array becomes big.Moreover, in etch configuration, produce lower lip (skirt) part.Expect selective oxide layer portion partly, size thereby strict controlled oxidation thing narrows down from this lower lip.
Yet if do not carry out etching from the mode that lower lip partly begins according to selective oxide layer, the etching bottom in the par in the surface-emitting laser array periphery enters down the semiconductor Bragg reflector.
Because down the low-index layer of semiconductor Bragg reflector is thicker than selective oxide layer usually, if two-layer have an identical composition, then the oxidation rate of low-index layer is faster than the oxidation rate of selective oxide layer.
If the oxidation rate of the low-index layer of following semiconductor Bragg reflector is faster than this selective oxide layer, then whole low-index layer is earlier oxidized, and the injection of execution electric current is impossible.
For fear of this problem, AlAs can not be used as near the material of the low-index layer the active layer that is positioned at close semiconductor Bragg reflector down.For this reason, in order to reduce the oxidation rate of semiconductor Bragg reflector, need to use the AlGaAs (Al for example of the Ga that adds specific quantity
0.9Ga
0.1As).With reference to Technical Report CS-3-4 (2004) from the Institute of Electronics, Informationand Communication Engineers, Electronics Society Convention and IEEEPHOTONICS TECHNOLOGY LETTERS, VOL.11, No.12,1999, pp.1539-1541.
The etching that Te Kaiping 09-018093 communique has disclosed the semiconductor-on-insulator Bragg reflector is stopped until GaInP cap rock (resonator zone).
Figure 37 is the plane graph according to the surface-emitting laser array of correlation technique.As shown in figure 37, two virtual components are arranged in the periphery of the center array part at surface emitting laser element place.
The spy opens post (platform) environment and these post (platform) different with the experience of the post (platform) in the array portion periphery that the 2000-114656 communique disclosed the center array part and correspondingly has different the configuration.
And the spy opens the 2000-114656 communique and has disclosed a kind of surface-emitting laser array, and the two virtual components that wherein are arranged in the periphery of center array part have been realized uniform properties.
In conventional oxidation type list surface emitting laser array, the downward semiconductor Bragg reflector of the etching bottom faces in the periphery of surface-emitting laser array in the par.If by etching on the present surface, for example AlAs is oxidized easily then to have high thermal conductivity material.AlAs can't be used for semiconductor Bragg reflector (at least near the zone active layer) down.
Therefore, heat is accumulated in active layer and the rising of active layer temperature easily.The problem that has the lifetime of optics output decline and surface emitting laser element.Particularly, when surface-emitting laser array is worked, because heat disturbs the influence of not expecting that causes to become remarkable.Surface-emitting laser array becomes in the work of high current value and can not and use the surface-emitting laser array with low optical output to become unavoidably.In addition, because heat disturbs the temperature that causes to rise the lifetime of surface-emitting laser array.
Open the instruction of 2000-114656 communique according to the spy, in order to prevent that the etching bottom in the par in the laser array periphery from arriving semiconductor Bragg reflector down, virtual component can be arranged in the entire wafer, so that the discrepancy delta d between the etch depth in the par of etch depth in the center array part and array portion periphery diminishes.
If does not eliminate the par, the etching bottom arrives semiconductor Bragg reflector down, makes AlAs oxidized.Therefore, virtual component need be arranged in the entire wafer.
Yet,, etched zone is diminished if virtual component is arranged in the entire wafer.This causes being difficult to (plasma emission spectrum, the analysis of optical reflection refractive index etc.) are monitored in oxidation.Moreover, if virtual component is arranged in the entire wafer, then on the surface of laser array, out-of-flatness occurs, and the possibility that lead-in wire cuts off increases.In addition, needing to form the wire bond pad implements.Yet if having out-of-flatness below the bottom of pad, the platform structure can be impaired when wire bond, and this causes the surface-emitting laser array produced defective.
Summary of the invention
According to the present invention, a kind of improved surface-emitting laser array is provided, wherein the problems referred to above are eliminated.
According to one aspect of the invention, a kind of surface-emitting laser array is provided, it is not furnished with virtual component, makes that heat is not easy to be accumulated in the active layer.
According to one aspect of the invention, a kind of optical scanner is provided, it comprises the surface-emitting laser array that is not furnished with virtual component, makes that heat is not easy to be accumulated in the active layer.
According to an aspect of the present invention, provide a kind of image processing system, it comprises the surface-emitting laser array that is not furnished with virtual component, makes that heat is not easy to be accumulated in the active layer.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of surface-emitting laser array is provided, this surface-emitting laser array comprises a plurality of surface emitting laser elements, each of these a plurality of surface emitting laser elements comprises: first reflector is formed on the substrate to constitute the semiconductor Bragg reflector; Resonator forms this first reflector of contact and comprises active layer; And second reflector, be formed at this top, first reflector and contact this resonator to constitute this semiconductor Bragg reflector, contain selective oxide layer in this second reflector, wherein this first reflector comprises low-index layer at least in this active layer side, the oxidation rate of this low-index layer is equivalent to or is higher than the oxidation rate that is included in the selective oxide layer in this second reflector, this resonator is to be made by the AlGaInPAs sill that comprises In at least, and the bottom of the platform structure in each surface emitting laser element is positioned at this selective oxide layer below and top, this first reflector.
Above-mentioned surface-emitting laser array can be arranged such that the etch-rate of the etch-rate of this resonator less than this second reflector.
Above-mentioned surface-emitting laser array can be arranged such that this second reflector comprises the layer of being made by the AlGaInPAs sill that comprises In at least in this active layer side.
Above-mentioned surface-emitting laser array can be arranged such that or interface this second reflector and resonator between inner at this resonator, the bottom of this structure.
Above-mentioned surface-emitting laser array can be arranged such that this first reflector comprises this low-index layer of being made by AlAs above the whole zone of this surface emitting laser element.
Above-mentioned surface-emitting laser array can be arranged such that this selective oxide layer that comprises in this second reflector constitutes selective oxidation type electric current narrow.
Above-mentioned surface-emitting laser array can be arranged such that the difference between the etch depth of periphery of etch depth in the interelement gap of these a plurality of surface emitting laser elements and these a plurality of surface emitting laser elements be equal to or less than each surface emitting laser element the bundle emission wavelength 1/2.
Above-mentioned surface-emitting laser array can be arranged such that the interelement gap between adjacent two of this a plurality of surface emitting laser elements is set to one of less in the following gap: the gap between the gap in these a plurality of surface emitting laser elements between the top side location of two platform structures and the basal surface position of these two platform structures, and this interelement gap is equal to or less than 20 microns.
Above-mentioned surface-emitting laser array can be arranged such that the protected film in the side in this first reflector covers.
Above-mentioned surface-emitting laser array can be arranged such that this diaphragm is by SiO
2, SiN and SiON any one make.
Above-mentioned surface-emitting laser array can be arranged such that the aluminium content of this low-index layer of the resonator side that is arranged in this first reflector is greater than the aluminium content of this selective oxide layer.
Above-mentioned surface-emitting laser array can be arranged such that the aluminium content of this low-index layer of the resonator side that is arranged in this first reflector equals the aluminium content of this selective oxide layer, and the thickness of this low-index layer of resonator side that is arranged in this first reflector is greater than the thickness of this selective oxide layer.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of optical scanner is provided, comprising: above-mentioned surface-emitting laser array; The deflection unit, deflection is by a plurality of laser beams of this surface-emitting laser array emission; And scanning optical element, laser beam is partial to unit guides on the scanning of a surface of photoreceptor from this.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of image processing system is provided, wherein be provided with above-mentioned optical scanner.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of image processing system is provided, wherein above-mentioned surface-emitting laser array is set to launch the light source of a plurality of laser beams.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of surface emitting laser element is provided, have the platform structure of emission of lasering beam, this surface emitting laser element comprises: substrate; First reflector is formed on this substrate to constitute the semiconductor Bragg reflector; Resonator forms this first reflector of contact and comprises active layer; Second reflector forms this resonator of contact to constitute this semiconductor Bragg reflector; And absorbed layer, be arranged as the etch depth difference that when forming this structure, absorbs along direction in the surface of this substrate, wherein the bottom of this structure is positioned at this absorbed layer along the direction vertical with this substrate, and this absorbed layer is formed to this resonator of small part along the thickness direction of this resonator.
Above-mentioned surface emitting laser element can be arranged such that this absorbed layer is formed in the whole zone of this resonator along the thickness direction of this resonator.
Above-mentioned surface emitting laser element can be arranged such that this absorbed layer is formed in the whole zone of this resonator along the thickness direction of this resonator, and partly forms along the thickness direction in this second reflector.
Above-mentioned surface emitting laser element can be arranged such that this absorbed layer comprises In at least.
In the embodiment of the invention that has solved one or more the problems referred to above, a kind of manufacture method of surface-emitting laser array is provided, this surface-emitting laser array comprises: arrangements of elements portion is arranged on the substrate and is furnished with a plurality of surface emitting laser elements; And par, be arranged on this substrate and along direction in the surface of this substrate be arranged in this arrangements of elements portion around, each of these a plurality of surface emitting laser elements comprises the platform structure of emission of lasering beam, and this par and this arrangements of elements portion comprise absorbed layer, this absorbed layer is arranged as the etch depth difference that absorbs along direction in this surface when forming this structure, this manufacture method comprises the steps: to form the multi-lager semiconductor film on this substrate; And this multi-lager semiconductor film of etching is so that the bottom of this structure is positioned at this absorbed layer, so that this arrangements of elements portion and par form.
In each of the surface emitting laser element that constitutes this surface-emitting laser array, resonator is to be made by the material that comprises In at least, the bottom of platform structure is arranged such that second reflector compares the bottom of more close platform structure with first reflector, and first reflector comprises low-index layer at least in the active layer side, and the oxidation rate of this low-index layer is equivalent to or greater than the oxidation rate of this selective oxide layer.
In the technology that forms this structure, be furnished with etch depth and difference between the etch depth around the array region in the array region of surface emitting laser element and reduce preventing first reflector on every side, and prevent the oxidation in this first reflector in the exposing of this array region.As a result, the heat that produces in active layer emits to substrate-side easily by first reflector.Therefore,, can not use virtual component to arrange this surface-emitting laser array, make that heat is not easy to be accumulated in the active layer according to the present invention.
Description of drawings
When reading following detailed description with reference to the accompanying drawings, other purpose of the present invention, feature and advantage will be apparent.
Fig. 1 is the plane graph of the surface-emitting laser array of the embodiment of the invention.
Fig. 2 is the sectional view of surface emitting laser element in the surface-emitting laser array of Fig. 1.
Fig. 3 is near the sectional view of active layer that the surface emitting laser element of Fig. 2 is shown.
Fig. 4 A, Fig. 4 B and Fig. 4 C are the diagram of manufacture method of the surface-emitting laser array of key-drawing 1.
Fig. 5 A, Fig. 5 B and Fig. 5 C are the diagram of manufacture method of the surface-emitting laser array of key-drawing 1.
Fig. 6 A and Fig. 6 B are the diagram of manufacture method of the surface-emitting laser array of key-drawing 1.
Fig. 7 is the etched diagram in the technology of key-drawing 4B.
Fig. 8 is used to explain when the surface-emitting laser array of construction drawing 1 sequential chart of the plasma emission when etching.
Fig. 9 is used to explain when the surface-emitting laser array of construction drawing 1 sequential chart of the plasma emission when etching.
The diagram of Figure 10 is used for explaining when stopping etching etch depth in the par in the resonator zone, and in etch depth in the interelement gap of surface emitting laser element and the par difference between the etch depth and interstation every relation.
The diagram of Figure 11 is used to explain when stopping etching in the reflector on being arranged in substrate-side etch depth in the par, and in etch depth in the interelement gap of surface emitting laser element and the par difference between the etch depth and interstation every relation.
Figure 12 is the plane graph and the sectional view of the surface-emitting laser array of Fig. 1.
Figure 13 is the plane graph of the surface-emitting laser array of the embodiment of the invention.
Figure 14 is the plane graph of the surface-emitting laser array of the embodiment of the invention.
Figure 15 is the sectional view of surface emitting laser element in the surface-emitting laser array of Figure 14.
Figure 16 is near the sectional view of active layer that the surface emitting laser element of Figure 15 is shown.
Figure 17 is the sectional view of the embodiment surface emitting laser element of Figure 14 of being used for testing.
Figure 18 is the sectional view of the surface emitting laser element of the comparative example that is used for testing.
Figure 19 is the diagram that is used to explain the relation between optics output and the electric current, and it shows experimental result.
Figure 20 is the plane graph of surface-emitting laser array in the embodiment of the invention.
Figure 21 A, Figure 21 B, Figure 21 C and Figure 21 D are the diagram of manufacture method that is used to explain the surface-emitting laser array of the embodiment of the invention.
Figure 22 A, Figure 22 B, Figure 22 C and Figure 22 D are the diagram of manufacture method that is used to explain the surface-emitting laser array of the embodiment of the invention.
Figure 23 is the diagram of manufacture method that is used to explain the surface-emitting laser array of present embodiment.
Figure 24 is the diagram that is used to explain the surface-emitting laser array of present embodiment.
Figure 25 is the diagram of composition that the optical scanner of the surface-emitting laser array that uses Figure 13 is shown.
Figure 26 is the diagram that the composition of laser printer is shown.
Figure 27 is the diagram that the composition of image processing system is shown.
Figure 28 is the diagram of optics delivery module.
Figure 29 is the improved sectional view of surface emitting laser element in the surface-emitting laser array of Fig. 1.
Figure 30 is near the sectional view of active layer that the surface emitting laser element of Figure 29 is shown.
Figure 31 is the improved sectional view of surface emitting laser element in the surface-emitting laser array of Fig. 1.
Figure 32 is near the sectional view of active layer that the surface emitting laser element of Figure 31 is shown.
Figure 33 is the improved sectional view of surface emitting laser element in the surface-emitting laser array of Fig. 1.
Figure 34 is near the sectional view of active layer that the surface emitting laser element of Figure 33 is shown.
Figure 35 is the improved sectional view of surface emitting laser element in the surface-emitting laser array of Fig. 1.
Figure 36 is near the sectional view of active layer that the surface emitting laser element of Figure 35 is shown.
Figure 37 is the plane graph according to the surface-emitting laser array of correlation technique.
Embodiment
Embodiments of the invention will be described with reference to the drawings.
The plane graph of the surface-emitting laser array of Fig. 1 embodiment of the invention.As shown in Figure 1, the surface-emitting laser array 100 of present embodiment comprises surface emitting laser element 1-32, weld pad 51-82 and lead-in wire W1-W32.
Surface emitting laser element 1-32 is arranged to the two dimensional form of 4 row * 8 row.Each surface emitting laser element 1-32 has rectangular shape, and a limit is 16 microns.
The row 1,9,17,25/2,10,18,26/3,11,19,27/4,12,20,28/5,13,21,29/6,14,22,30/7,15,23,31/8,16,24,32 of four surface emitting laser elements are arranged along sub-scanning direction.The capable 1-8/9-16/17-24/25-32 of eight surface emitting laser elements arranges along main scanning direction.
The capable 1-8/9-16/17-24/25-32 of eight surface emitting laser elements arranging along main scanning direction press the translation of step mode along sub-scanning direction, and is arranged such that overlapping mutually of 32 laser beams launching from 32 surface emitting laser element 1-32.In eight surface emitting laser element 1-8/9-16/17-24/25-32 that arrange along main scanning direction, the gap between two adjacently situated surfaces emitting laser elements is set to X at interval.At four surface emitting laser elements 1,9,17,25/2,10 of arranging along sub-scanning direction, 18,26/3,11,19,27/4,12,20,28/5,13,21,29/6,14,22,30/7,15,23,31/8, in 16,24,32, the gap between two adjacently situated surfaces emitting laser elements is set to d at interval.D is less than interval X at interval.
For example, d equals 24 microns at interval, and X equals 30 microns at interval.
Arrange by equal intervals c1 along sub-scanning direction from eight vertical normals of the straight line with being parallel to sub-scanning direction that get at the center of eight surface emitting laser element 1-8 arranging along main scanning direction, c1 is determined by condition c1=d/8 at interval.That is to say that when interval d was set to 24 microns, c1 equaled the 24/8=3 micron at interval.
Also arrange by equal intervals c1 from eight vertical normals of the straight line with being parallel to sub-scanning direction that the respective center of all the other eight surface emitting laser element 9-16/17-24/25-32 of arranging along main scanning direction is got along sub-scanning direction.
Weld pad 51-82 becomes two dimensional form around surface emitting laser element 1-32 peripheral disposition.Lead-in wire W1-W32 is arranged to surface emitting laser element 1-32 is connected respectively to weld pad 51-82.Every lead-in wire W1-W32 has for example 8 microns live width.
Surface emitting laser element 1-8,9,16,17,24-32 that lead-in wire W1-W9, W16, W17, W24-W32 will be arranged to be arranged among the surface emitting laser element 1-32 of two dimensional form outermost are connected respectively to weld pad 51-59,66,67,74,75-82, and lead-in wire W1-W9, W16, W17, W24-W32 are arranged to not along main scanning direction through between two adjacently situated surfaces emitting laser elements.
Surface emitting laser element 10-15,18-23 that lead-in wire W10-W15, W18-W23 will be arranged to be arranged among the surface emitting laser element 1-32 of two dimensional form interior location are connected respectively to weld pad 60-65,68-73, and lead-in wire W10-W15, W18-W23 are arranged to along main scanning direction through between two adjacently situated surfaces emitting laser elements.
In eight surface emitting laser element 1-8/9-16/17-24/25-32 that arrange along main scanning direction, the gap between two adjacently situated surfaces emitting laser elements is set to above-mentioned interval X (=30 microns).Each surface emitting laser element 1-32 has rectangular shape, 16 microns of length of sides.(=30-16) the micron that equals 14 along the interval of two adjacently situated surfaces emitting laser elements of main scanning direction.The live width of lead-in wire W10-W15, W18-W23 is 8 microns, and these lead-in wires can be arranged between two adjacently situated surfaces emitting laser elements along main scanning direction.
Fig. 2 is the sectional view of surface emitting laser element 1 in the surface-emitting laser array of Fig. 1.As shown in Figure 2, surface emitting laser element 1 comprises substrate 101, reflector 102,106, resonator barrier layer 103,105, active layer 104, selective oxide layer 107, contact layer 108, SiO
2Layer 109, insulating resin 110, p type electrode 111 and n type electrode 112.
Surface emitting laser element 1 is a surface emitting laser, and emission wavelength is the laser beam of 780nm.Substrate 101 is made of n p type gallium arensidep (n-GaAs).
When the emission wavelength of surface emitting laser element 1 is set to λ, each n-AlAs and n-Al
0.3Ga
0.7The thickness of As is set to λ/4n (wherein n is the refractive index of each semiconductor layer).
Each p-Al
0.9Ga
0.1As and Al
0.3Ga
0.7The thickness of As is set to λ/4n (wherein n is the refractive index of each semiconductor layer).Selective oxide layer 107 is to be constituted and be formed in the reflector 106 by p-AlAs.
More specifically, selective oxide layer 107 is formed at the position apart from resonator barrier layer 105 7 λ/4.Selective oxide layer 107 comprises non-oxide regional 107a and oxide regions 107b, and thickness is 20nm.
SiO
2Layer 109 forms a primary flat of a part that covers resonator barrier layer 103, and the end face of active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108.
Insulating resin 110 forms contact SiO
2Layer 109.P type electrode 111 is formed on part contact layer 108 and the insulating resin 110.N type electrode 112 is formed at the back side of substrate 101.
Each reflector 102,106 constitutes the semiconductor distributed bragg reflector device, and this semiconductor distributed bragg reflector device reflects from the emission light of active layer 104 emissions by Prague multipath, and comprises the emission light in the active layer 104.
The refractive index of oxide regions 107b is less than the refractive index of non-oxide regional 107a.Oxide regions 107b is limited in non-oxide regional 107a with the emission light of active layer 104 vibrations, and constitutes current blocking portion, and the path that this current blocking portion will flow into active layer 104 from the electric current that p type electrode 111 injects is restricted to non-oxide regional 107a.
Like this, acquisition has the emission of the surface emitting laser element 1 of low threshold current.So, current blocking portion forms by selective oxide layer 107 being carried out selective oxidation formation oxide regions 107b.Therefore, this current blocking portion is the selective oxidation type.
Fig. 3 is near the sectional view of active layer 104 that the surface emitting laser element 1 of Fig. 2 is shown.As shown in Figure 3, reflector 102 comprises low-index layer 1021, high refractive index layer 1022 and component dipping bed 1023.
Low-index layer 1021 is to be made of n-AlAs, and high refractive index layer 1022 is by n-Al
0.3Ga
0.7As constitutes.
Low-index layer 1021 contact resonator barrier layers 103.Reflector 106 comprises low-index layer 1061, high refractive index layer 1062 and component dipping bed 1063.
Low-index layer 1061 is by p-Al
0.9Ga
0.1As constitutes, and high refractive index layer 1062 is by p-Al
0.3Ga
0.7As constitutes.Component dipping bed 1063 is made up of p-AlGaAs, and wherein the content of Al changes towards opposite side gradually from low-index layer 1061 or high refractive index layer 1062.
Low-index layer 1061 contact resonator barrier layers 105.Active layer 104 is to be made of quantum well structure, the three layers of trap layer 1041 that wherein constitutes by GaInPAs and by Ga
0.6In
0.4Four layers of base layer 1042 that P constitutes are alternately laminated in this quantum well structure.
In surface emitting laser element 1, resonator barrier layer 103,105 and active layer 104 constitutes resonators, and the thickness of the vertical direction of the edge of resonator and substrate 101 be set to surface emitting laser element 1 a wavelength (=λ).That is to say that resonator barrier layer 103,105 and active layer 104 constitute single wavelength (one-wave) resonator.
Each of surface emitting laser element 2-32 shown in Figure 1 is constructed with the composition identical with the surface emitting laser element 1 of Fig. 2 and Fig. 3.
Fig. 4 A-4C, Fig. 5 A-5C and Fig. 6 A and 6B are the diagram of manufacture method of the surface-emitting laser array 100 of key-drawing 1.In Fig. 4 A-6B, four surface emitting laser elements 1,9,17 among 32 surface emitting laser element 1-32 of surface-emitting laser array 100 of construction drawing 1 and the manufacturing process under 25 the situation will be explained, as the example of the manufacture method of surface-emitting laser array 100.
At Fig. 4 A, when manufacturing process begins, carry out metal-organic chemical vapor deposition equipment (MOCVD) technology.Reflector 102, resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108 are layered on the substrate 101 one by one (sees Fig. 4 A).
In this case, use trimethyl aluminium (TMA), trimethyl gallium (TMG), arsine (AsH
3) and hydrogen selenide (H
2Se) be raw material, form the n-AlAs and the n-Al in reflector 102
0.3Ga
0.7As.Use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form (the Al on resonator barrier layer 103
0.7Ga
0.3)
0.5In
0.5P.
Use trimethyl gallium (TMG), trimethyl indium (TMI), phosphine (PH
3) and arsine (AsH
3) be raw material, form the GaInPAs of active layer 104.Use trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form the Ga of active layer 104
0.6In
0.4P.
Use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form (the Al on resonator barrier layer 105
0.7Ga
0.3)
0.5In
0.5P.Use trimethyl aluminium (TMA), trimethyl gallium (TMG), arsine (AsH
3) and carbon tetrabromide (CBr
4) be raw material, form the p-Al in reflector 106
0.9Ga
0.1As/p-Al
0.3Ga
0.7As.Can use zinc methide (DMZn) to substitute carbon tetrabromide (CBr
4).
By using trimethyl aluminium (TMA), arsine (AsH
3) and carbon tetrabromide (CBr
4) be raw material, form the p-AlAs of selective oxide layer 107.By using trimethyl gallium (TMG), arsine (AsH
3) and carbon tetrabromide (CBr
4) be raw material, form the p-GaAs of contact layer 108.Equally, in this case, can use zinc methide (DMZn) to substitute carbon tetrabromide (CBr
4).
Subsequently, resist is applied to contact layer 108, and by photoetching (photoengraving) technology, resist pattern 120 is formed on the contact layer 108 (sees Fig. 4 B).
If resist pattern 120 forms, then resist pattern 120 is used as mask.Enforcement is to the dry etching of resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108 of part, and further removes resist pattern 120.
In this case, Bu Fen resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108 experience are introduced into halogen based gases Cl wherein
2, BCl
3, SiCl
4, CCl
4Or CF
4Use the dry etching method of plasma, for example reactive ion beam etching (RIBE) method, inductively coupled plasma (ICP) engraving method and reactive ion etching (RIE) method are carried out etching thus.
During resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and the contact layer 108 of etching part, carry out plasma emission spectrometry from the window of etch system, and the emissive porwer of the 451nm of In changes in time monitored.
Owing to have only the emission that when the resonator zone is etched, just can detect In, therefore can easily etching be stopped in the resonator zone that constitutes by the AlGaInPAs sill.
As a result, the platform structure 131-134 (seeing Fig. 4 C) in the formation surface emitting laser element 1,9,17 and 25.
Each structure 131-134 is resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and the contact layer 108 by part.
Alternatively, Bu Fen resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108 can come etching by wet etching.When coming selective etch reflector 106, selective oxide layer 107 and contact layer 108, can use the sulfate etchant by wet etching.
Then, shown in Fig. 5 A-5C, after the technology of Fig. 4 C is finished, using nitrogen that the water that is heated at 85 degrees centigrade is carried out in the atmosphere of bubbling (bubbling), sample is heated to 350 degrees centigrade, and oxidized around the selective oxide layer 107 along the direction from the outer part to the central part, make non-oxide regional 107a and oxide regions 107b be formed in the selective oxide layer 107 (seeing Fig. 5 A).
Subsequently, use the chemical vapor deposition (CVD) method on whole sample, to form SiO
2Layer 109, and use electrofax (electrophotographic) technology is removed zone and the interior SiO of adjacent area thereof that is used as illuminating part
2Layer 109 (seeing Fig. 5 B).
Then, insulating resin 110 is applied to whole sample by spin coated, and the insulating resin 110 that is used as in the zone of illuminating part is removed (seeing Fig. 5 C).
Then, shown in Fig. 6 A and Fig. 6 B, after insulating resin 110 forms, resist pattern with preliminary dimension is formed in the zone that is used as illuminating part, p type electrode material is formed on the whole sample by CVD (Chemical Vapor Deposition) method, p type electrode material on the resist pattern is removed by stripping means, and p type electrode 111 forms (seeing Fig. 6 A).
The back side of substrate 101 is ground, n type electrode 112 be formed on the back side of substrate 101 and by further annealing to form the ohmic conduction (seeing Fig. 6 B) of p type electrode 111 and n type electrode 112.So, finished surface-emitting laser array 100.
In the technology of Fig. 4 B and Fig. 4 C, show the dry etching that is used to form four surface emitting laser elements.Yet, in practice, in the technology of Fig. 4 B and Fig. 4 C, be used to form the dry etching of 32 surface emitting laser element 1-32 of Fig. 1 simultaneously.
In this case, use photomask to be formed for forming simultaneously the resist pattern of 32 surface emitting laser element 1-32, this photomask is consistent with 32 surface emitting laser element 1-32 of Fig. 1.That is to say, the resist pattern that is used for forming simultaneously 32 surface emitting laser element 1-32 is arranged by following mode, promptly, at interval X and d are set to the d＜X that satisfies condition, and arrange by equal intervals c1 from eight vertical normals of the straight line with arranging along sub-scanning direction at eight centers of eight surface emitting laser element 1-8/9-16/17-24/25-32 arranging along main scanning direction.
In surface-emitting laser array 100, the interval d of the surface emitting laser element of arranging along sub-scanning direction is set to the interval X less than the surface emitting laser element of arranging along main scanning direction.Thus, when comparing greater than the situation of interval X with interval d, at interval c1 (=d/8) can diminish and this is useful for high density recording.
The interval of the surface emitting laser element that can also make the interval of the surface emitting laser element of arranging along sub-scanning direction and arrange along main scanning direction all narrows down.Yet, need to enlarge at least one at interval, to guarantee the space that element wiring is required and to reduce the influence that the heat between the element is disturbed.Therefore, write, preferably enlarge interval along main scanning direction in order to carry out high density.
Fig. 7 is the etched diagram in the technology of key-drawing 4B.Fig. 7 shows when not using resist pattern 120 to come etching by any crystallizing layer that constitutes of resonator barrier layer 103, active layer 104, resonator barrier layer 105, reflector 106, selective oxide layer 107 and contact layer 108, distributes along the etch depth of direction (in-surface direction) DR1 in the surface of substrate 101.
As shown in Figure 7,, represent with curve k1 when (being called region R EG1) in etching contact layer 108, selective oxide layer 107 and reflector 106 along the etch depth distribution of direction DR1 in the surface of substrate 101.On the other hand, on resonator barrier layer 105, active layer 104 and resonator barrier layer 103 be when (being called region R EG2), distribute along the etch depth of direction DR1 in the surface of substrate 101 and represent with curve k2.
Because reflector 106, selective oxide layer 107 and contact layer 108 are to be made of the AlGaAs sill as mentioned above, etch-rate is big and along the etch depth of the region R EG1 of direction DR1 in the surface distribute big (seeing curve k1).
On the other hand, force down because resonator barrier layer 103,105 and active layer 104 comprise the steam of the reactant of In and In, so the etch-rate of resonator barrier layer 103,105 and active layer 104 is less than the etch-rate of reflector 106, selective oxide layer 107 and contact layer 108.Therefore, the etch depth distribution of the region R EG2 of the surperficial interior direction DR1 in edge is less than the etch depth distribution (seeing curve k2) of the region R EG1 of the surperficial interior direction DR1 in edge.
That is to say that the etch depth difference that produces along direction DR1 in the surface is absorbed by the etch-rate that reduces in the region R EG2 in region R EG1.As a result, the etch depth distribution along the region R EG2 of direction DR1 in the surface distributes less than the etch depth along the region R EG1 of direction DR1 in the surface.
Then, will explain experimental result, this experimental result shows the etch-rate of the etch-rate of the region R EG2 that comprises In less than the region R EG1 that is made of the AlGaAs sill.
Fig. 8 and Fig. 9 are respectively applied for explanation when the surface-emitting laser array 100 of construction drawing 1, first and second sequential charts of the plasma emission when etching.
At Fig. 8 and Fig. 9, vertical axis is represented the intensity of plasma emissioning light, the trunnion axis express time.Fig. 8 illustrates the situation that etching proceeds to the centre in resonator zone, and Fig. 9 illustrates etching proceeds to the period 3 in reflector 102 from the resonator zone situation.
At Fig. 8, curve k3 illustrates the emissive porwer of gallium (Ga), and curve k4 illustrates the emissive porwer of indium (In), and curve k5 illustrates the emissive porwer of aluminium (Al).
At Fig. 9, curve k6 illustrates the emissive porwer of Ga, and curve k7 illustrates the emissive porwer of In, and curve k8 illustrates the emissive porwer of Al.
In experiment, use such sample, from the surface to the reflector 106 and the resonator zone between the thickness at interface be 3.18 microns, and the thickness that comprises the resonator zone of In is 0.23 micron.
From the surface to the reflector 106 and the resonator zone between the interface the zone in etch-rate be 3.18 microns/871 seconds=3.65 * 10
-3Little meter per second.On the other hand, the etch-rate in the resonator zone is 0.23 micron/372 seconds=6.18 * 10
-4Little meter per second (see figure 9).
As mentioned above, in comprising the resonator zone of In, etch-rate reduces.Although the thickness in resonator zone (=0.23 micron) is less than the thickness (=3.18 microns) in the zone of top, resonator zone, the resonator zone needs longer etching period.
In the resonator zone, the emissive porwer of In increases (seeing curve k4 and k7).Therefore, the increase of the emissive porwer by surveying In, etching can easily stop in the resonator zone.
The emissive porwer of Ga and the emissive porwer of Al be periodically-varied along with the passing of etching period, and the amplitude of emissive porwer reduces (seeing curve k3, k5, k6 and k8) gradually along with the passing of etching period.
If distributing along the etch depth of the wafer of direction DR1 in the surface is uniformly, then the emissive porwer of the emissive porwer of Ga and Al with fixed amplitude periodically-varied.
On the other hand, if, then observe the emission of Al and the emission of Ga simultaneously, make the amplitude of emissive porwer of the amplitude of emissive porwer of Ga and Al diminish along the etch depth skewness of wafer of direction DR1 in the surface.
Therefore, the amplitude of the amplitude of the emissive porwer of Ga and the emissive porwer of Al reduces gradually along with the passing of etching period to mean that along with the passing of etching period, the etch depth difference along direction DR1 in the surface of wafer occurs.
When the resonator zone was passed in etching, the amplitude of the amplitude of the emissive porwer of Ga and the emissive porwer of Al further reduced.When the etching bottom arrives reflector 102, occur along the more big-difference (seeing curve k6 and k8) of the etch depth of direction DR1 in the surface.
The diagram of Figure 10 is used for explaining when stopping etching etch depth in the par in the resonator zone, and in etch depth in the interelement gap of surface emitting laser element and the par difference between the etch depth and interstation every relation.
The diagram of Figure 11 is used to explain when stopping etching in the reflector 102 on being arranged in substrate 101 sides etch depth in the par, and in etch depth in the interelement gap of surface emitting laser element and the par difference between the etch depth and interstation every relation.
In Figure 10 and Figure 11, vertical axis is represented the discrepancy delta d between the etch depth in etch depth in the interelement gap and the par, trunnion axis represent interstation every.
In Figure 10 and Figure 11, ◆ expression par etch depth, ■ represents discrepancy delta d.
When etching stopped at resonator zone middle, even interstation is divided into below 10 microns, the discrepancy delta d in etch depth in interelement gap (inter-element gap) and the par between the etch depth was the following (see figure 10) of 100nm.
On the other hand, in etching stops at the reflector 102 that is arranged in substrate 101 sides and interstation when being about 23 microns, discrepancy delta d is set to 100nm.When interstation when being set to below 20 microns, discrepancy delta d surpasses 100nm.When interstation was divided into below 10 microns, discrepancy delta d was increased to about 250nm (seeing Figure 11).
Like this, even till the time in etching bottom arrival resonator zone, produce big etch depth difference between interelement part and par, etching still stops at the resonator zone that comprises In, and the resonator zone that the big etched speed of etch depth difference is little absorbs.Even interstation is every diminishing, the etch depth discrepancy delta d between the smooth portion of element gap peace still can diminish.
That is to say, because etching stops at the resonator zone that comprises In, therefore can make wafer identical along the etch depth of direction DR1 in the surface, wherein in this wafer, interelement gap that surface emitting laser element 1-32 densification is arranged and the par that does not form surface emitting laser element coexist.
Figure 12 is the plane graph and the sectional view of the surface-emitting laser array 100 of Fig. 1.As shown in figure 12, the zone that is furnished with surface emitting laser element 1-32 is non-etching area, and is etching area around the surface emitting laser element 1-32.
The sectional view of A-A ' intercepting along the line comprises near the cross section of the par surface emitting laser element 25-27 and the surface emitting laser element 25.Between the surface emitting laser element 25 and 26 and the etch depth between surface emitting laser element 26 and 27 be set to D1, and near the etch depth of the par the surface emitting laser element 25 is set to D2.
Etch depth D1 is less than etch depth D2.As a result, the difference between etch depth D1 and the etch depth D2 is set to Δ d.
The 141-145 of lower lip portion forms by etching contact layer 108, selective oxide layer 107, reflector 106, resonator barrier layer 105, active layer 104 and resonator barrier layer 103.As mentioned above, resonator barrier layer 103,105 and active layer 104 comprises In and etch-rate is less.For this reason, on the resonator barrier layer 103,105 and during the etching of active layer 104, also carrying out along the etching of the surface-emitting laser array 100 of direction DR1 in the surface.As a result, the size of the 141-145 of lower lip portion is less than existing surface-emitting laser array.
When the lower lip portion in this etch configuration has the inclination different with the side on the top of platform structure and oxidation blocking layer when being included in the lower lip portion in this etch configuration, the width of selective oxide layer is greater than the width on the top of platform structure, and is difficult to correctly assess the width of this selective oxide layer.As a result, the assessment of the oxide regions 107b inaccuracy that becomes, and be difficult to the narrow diameter of controlled oxidation correctly.Therefore, expectation etching bottom enters the resonator zone and passes whole array chip.
When the thickness in resonator zone equals λ (thickness of single wavelength resonances device), etching is carried out in expectation in the following manner, that is, consistent along the center of the thickness direction in resonator zone with etching bottom (par), thus obtain along the etch depth uniformity of direction in the surface of wafer surface.In this case, expectation Δ d is set to below λ/2 as the effective length in the medium.
Because the emission wavelength of each surface emitting laser element 1-32 is 780nm among this embodiment, the thickness of single wavelength resonances device is about 230nm.Therefore, expectation discrepancy delta d equals below the 115nm.
In existing surface-emitting laser array, discrepancy delta d is 115nm, and interstation is divided into below 20 microns (sees Figure 11).In surface-emitting laser array 100 of the present invention, discrepancy delta d is less than 100nm, even interstation is every being about 20 microns.Therefore, when interstation when being lower than 20 microns, the present invention is effective.If wavelength is shorter than 780nm, the thickness of then single wavelength resonances device is littler, and at interstation in bigger zone, discrepancy delta d surpasses λ/2.
As mentioned above, the platform etching that is used to form the platform structure in the surface-emitting laser array 100 stops at the centre (the perhaps centre on resonator barrier layer 103) in the resonator zone that comprises In.Even interstation is every diminishing, the etch depth discrepancy delta d between interelement gap and the par diminishes, and the low-index layer in reflector 102 (=AlAs) do not expose in the par.As a result, even the selective oxidation of selective oxide layer 107 is performed, the low-index layer in reflector 102 (=AlAs) not oxidized.
Therefore, according to the present invention, the heat that produces in active layer 104 can be emitted to substrate 101 by the AlAs (low-index layer) in reflector 102, and can prevent that accumulation of heat is in active layer 104 and do not use virtual component.
Interval between two adjacently situated surfaces emitting laser elements is meant following one of narrower: the gap between gap between the surface emitting laser element of the top side location of platform structure and the surface emitting laser element at the basal surface position of platform structure.More still, the gap between the surface emitting laser element at the basal surface position of platform structure is bigger in the gap between the surface emitting laser element of the top side location of platform structure, and this depends on the engraving method that forms this structure.
Figure 13 is the plane graph of the surface-emitting laser array of the embodiment of the invention.As shown in figure 13, surface-emitting laser array 100A is substantially the same with the surface-emitting laser array 100 of Fig. 1, except surface emitting laser element 33-40, weld pad 83-90 and lead-in wire W33-W40 add the surface-emitting laser array 100 of Fig. 1 to.
In surface-emitting laser array 100A, each surface emitting laser element 33-40 of two dimensional form that surface emitting laser element 1-40 is arranged to 4 row * 10 row has rectangular shape, article one, the length of side is 16 microns, and this is similar to each surface emitting laser element 1-32.
Four surface emitting laser elements 1,11,21,31/2,12,22,32/3,13,23,33/4,14,24,34/5,15,25,35/6,16,26,36/7,17,27,37/8,18,28,38/9,19,29,39/10,20,30,40 along sub-scanning direction layout, and ten surface emitting laser element 1-10/11-20/21-30/31-40 arrange along main scanning direction.
The capable 1-10/11-20/21-30/31-40 of ten surface emitting laser elements arranging along main scanning direction press the translation of step mode along sub-scanning direction, and is arranged such that overlapping mutually of 40 laser beams launching from 40 surface emitting laser element 1-40.
In ten surface emitting laser element 1-10/11-20/21-30/31-40 that arrange along main scanning direction, the gap between two adjacently situated surfaces emitting laser elements is set to " X " at interval.At four surface emitting laser elements 1,11,21,31/2,12,22 of arranging along sub-scanning direction, 32/3,13,23,33/4,14,24,34/5,15,25,35/6,16,26,36/7,17,27,37/8,18,28,38/9,19,29, in 39/10,20,30,40, the gap between two adjacently situated surfaces emitting laser elements is set to d at interval.
Arrange by equal intervals c2 along sub-scanning direction from ten vertical normals of the straight line with being parallel to sub-scanning direction of the respective center of ten surface emitting laser elements (for example element 31-40) of arranging along main scanning direction, with the c2=d/8 that satisfies condition.When interval d was set to 24 microns, c2 equaled the 24/10=2.4 micron at interval.
Same as described above, also arrange by equal intervals c2 from ten vertical normals of the straight line with being parallel to sub-scanning direction of the respective center of all the other ten surface emitting laser element 1-10/11-20/21-30 of arranging along main scanning direction along sub-scanning direction.
Weld pad 52-90 becomes two dimensional form around surface emitting laser element 1-40 peripheral disposition.Lead-in wire W1-W40 is arranged to surface emitting laser element 1-40 is connected respectively to weld pad 51-90.Every lead-in wire W33-W40 has for example 8 microns live width.
Surface emitting laser element 1-11,20,21,30-40 that lead-in wire W1-W11, W20, W21, W30-W40 will be arranged to be arranged among the surface emitting laser element 1-40 of two dimensional form outermost are connected respectively to weld pad 51-61,70,71,80-90, and lead-in wire W1-W11, W20, W21, W30-W40 are arranged to without between two adjacently situated surfaces emitting laser elements.
Surface emitting laser element 12-19,22-29 that lead-in wire W12-W19, W22-W29 will be arranged to be arranged among the surface emitting laser element 1-40 of two dimensional form interior location are connected respectively to weld pad 62-69,72-79, and W12-W19, W22-W29 are arranged to along main scanning direction through between two adjacently situated surfaces emitting laser elements.If the live width of every lead-in wire W1-W40 is 8 microns as mentioned above, then every lead-in wire W12-W19, W22-W29 can be arranged between two adjacently situated surfaces emitting laser elements along main scanning direction.
In the zone that is furnished with weld pad 51-90, epitaxial loayer keeps, and groove 150 forms around surface emitting laser element 1-40, and groove 150 is embedded with polyimides.Lead-in wire is arranged to the top through polyimide layer.Weld pad 51-90 is attached to epitaxial loayer by connecing insulating barrier.By this form (rather than forming weld pad 1-40 on polyimides), adhering to of weld pad 1-40 and insulating barrier can improve, and the separation of weld pad can be prevented fully when wire bond.
Each surface emitting laser element 33-40 has the cross section structure identical with the surface emitting laser element 1 of Fig. 2 and Fig. 3.
Therefore, the platform etching that is used to form the platform structure among the surface-emitting laser array 100A stops at the centre in the resonator zone (resonator barrier layer 103) that comprises In, even and interstation is every diminishing, etch depth discrepancy delta d between interelement gap and the par diminishes, the low-index layer in reflector 102 (=AlAs) do not expose in the par.As a result, even the selective oxidation of selective oxide layer 107 is performed, the low-index layer in reflector 102 (=AlAs) not oxidized.
Therefore, according to present embodiment, the heat that produces in active layer 104 can be emitted to substrate 101 by the AlAs (low-index layer) in reflector 102, and can prevent that accumulation of heat is in active layer 104 and do not use virtual component.
Figure 14 is the plane graph of the surface-emitting laser array of the embodiment of the invention.As shown in figure 14, in the surface-emitting laser array 200 of present embodiment, the surface emitting laser element 1-32 of the surface-emitting laser array 100 of Fig. 1 is replaced by surface emitting laser element 151-182, and all the other compositions are identical with surface-emitting laser array 100.
In surface-emitting laser array 200, lead-in wire W1-W32 is connected to weld pad 51-82 with surface emitting laser element 151-182 respectively.Surface emitting laser element 151-182 is arranged to the two dimensional form of 4 row * 8 row.
Each surface emitting laser element 151-182 has rectangular shape, and a limit is 16 microns.Eight row 151,159,167,175/152,160 of four surface emitting laser elements, 168,176/153,161,169,177/154,162,170,178/155,163,171,179/156,164,172,180/157,165,173,181/158,166,174,182 along sub-scanning direction layout, and eight surface emitting laser element 151-158/159-166/167-174/175-182 arrange along main scanning direction.Eight surface emitting laser element 151-158/159-166/167-174/175-182 that arrange along main scanning direction press translation of step mode and configuration along sub-scanning direction.As a result, 32 laser beams from 32 surface emitting laser element 1-32 emissions do not overlap mutually.
In eight surface emitting laser element 151-158/159-166/167-174/175-182 that arrange along main scanning direction, the gap between two adjacently situated surfaces emitting laser elements is set to X at interval.
At four surface emitting laser elements 151,159,167,175/152,160 of arranging along sub-scanning direction, 168,176/153,161,169,177/154,162,170,178/155,163,171,179/156,164,172,180/157,165,173,181/158, in 166,174,182, the gap between two adjacently situated surfaces emitting laser elements is set to d at interval.Arrange by equal intervals c1 along sub-scanning direction in the gap along sub-scanning direction of eight normals that the straight line of getting from eight centers of eight surface emitting laser element 151-158 arranging along main scanning direction with arranging along sub-scanning direction is vertical.
From eight vertical normals of the straight line with arranging at eight centers of eight surface emitting laser element 159-166/167-174/175-182 arranging along main scanning direction along sub-scanning direction along the gap of sub-scanning direction also along arranging by equal intervals c1.
Figure 15 is the sectional view of surface emitting laser element 151 in the surface-emitting laser array of Figure 14.As shown in figure 15, in surface emitting laser element 151, the resonator barrier layer 103,105 of surface emitting laser element 1 shown in Figure 2 and reflector 106 are replaced by resonator barrier layer 103A, 105A and reflector 106A respectively, and all the other compositions are identical with surface emitting laser element 1.
Figure 16 is near the sectional view that illustrates the active layer 104 of surface emitting laser element 151 of Figure 15.As shown in figure 16, the low-index layer 1021 contact resonator barrier layer 103A in reflector 102.The low-index layer 1021 of resonator barrier layer 103A contact reflex layer 102 and the base layer 1042 of active layer 104.In the 106A of reflector, the low-index layer 1061 of the most close active layer 104 is replaced by low-index layer 1061A in the reflector 106 shown in Figure 3, and all the other compositions are identical with reflector 106.
Low-index layer 1061A is by p-(Al
0.7Ga
0.3)
0.5In
0.5P constitutes and contact resonator barrier layer 105A.The base layer 1042 of resonator barrier layer 105A contact active layer 104 and the low-index layer 1061A of reflector 106A.
In surface emitting laser element 151, resonator barrier layer 103A, 105A and active layer 104 constitutes resonators, and this resonator along the thickness of the direction vertical with substrate 101 be set to surface emitting laser element 151 a wavelength (=λ).That is to say that resonator barrier layer 103A, 105A and active layer 104A constitute single wavelength resonances device.
Each of surface emitting laser element 152-182 shown in Figure 14 has the composition identical with the surface emitting laser element 151 shown in Figure 15 and 16.
Surface-emitting laser array 200 is made according to the manufacturing process of Fig. 4 A-6B.
In this case, in the technology of Fig. 4 A,, use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH by the MOCVD method
3) be raw material, form (the Al of resonator barrier layer 103A and 105A
0.1Ga
0.9)
0.5In
0.5P.By the MOCVD method, use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI), phosphine (PH
3) and zinc methide (DMZn) be raw material, form to constitute the p-(Al of the low-index layer 1061A of reflector 106A
0.7Ga
0.3)
0.5In
0.5P.Can use carbon tetrabromide (CBr
4) alternative zinc methide (DMZn).
In each surface emitting laser element 151-182 of surface-emitting laser array 200, resonator (= resonator barrier layer 103A, 105A and active layer 104) and partially reflecting layer 106A (low-index layer 1061A) comprise In, and comprise In the layer thickness greater than the thickness among the surface emitting laser element 1-32.Therefore, compare, the etched control of surface-emitting laser array 200 is become easier with surface-emitting laser array 100.
In the present embodiment, among the 106A of reflector only the low-index layer 1061A of close resonator comprise In.Alternatively, this embodiment can be adjusted into, and low-index layer and the high refractive index layer of the reflector 106A of the close resonator of this resonator all comprise In.In this case, low-index layer is by (Al
0.7Ga
0.3)
0.5In
0.5P constitutes, and high refractive index layer is by (Al
0.1Ga
0.9)
0.5In
0.5P constitutes.In this case, comprise In more than two-layer, and comprise the thickness summation of the layer of In can be bigger.
P-(Al
0.7Ga
0.3)
0.5In
0.5P is a broad-band gap, can be used for many occasions by doping of Zn or Mg.These dopants spread easily.If these diffuse dopants are to active layer 104, active layer 104 can be impaired, and this causes launching the optical efficiency reduction and causes reliability decrease.
In surface emitting laser element 151-182, p-(Al
0.7Ga
0.3)
0.5In
0.5P is arranged in resonator barrier layer 105A and compares in the reflector 106A of active layer 104, and resonator barrier layer 103A and 105A are by non-doping (Al
0.1Ga
0.9)
0.5In
0.5P constitutes.What can prevent to be subjected to impurity does not expect influence.
Therefore, the platform etching that is used to form the platform structure of surface-emitting laser array 200 stops at the centre (the perhaps centre of resonator barrier layer 103A) in the zone that comprises In.Even interstation is every diminishing, the etch depth discrepancy delta d between interelement gap and the par diminishes, and the low-index layer 1021 in reflector 102 (=AlAs) do not expose in the par.As a result, even the selective oxidation of selective oxide layer 107 is performed, the low-index layer 1021 in reflector 102 (=AlAs) not oxidized.
Therefore, according to present embodiment, the heat that produces in active layer 104 can be emitted to substrate 101 by the AlAs (low-index layer) in reflector 102, and can prevent that accumulation of heat is in active layer 104 and do not use virtual component.Because surface-emitting laser array 200 is provided with surface emitting laser element 151-182, its comprise In the layer thickness greater than surface emitting laser element 1-32, therefore compare with surface-emitting laser array 100, can more effectively controllably etching be stopped in the layer that comprises the etching bottom that is used for In.
Then, explain the output characteristic of the surface-emitting laser array 200 of present embodiment.
Figure 17 is the sectional view of the embodiment surface emitting laser element of Figure 14 of being used for testing.Figure 18 is the sectional view of the surface emitting laser element of the comparative example that is used for testing.
In the embodiment of Figure 17, (=AlAs) thickness is set to 3 λ/4 near the low-index layer 1021 in three cycles in the reflector 102 of surface emitting laser element 151 active layer 104, and all the other compositions are identical with surface emitting laser element 151.
In the comparative example of Figure 18, the reflector 102 of surface emitting laser element 151 is replaced by a reflector, and this reflector is the n-Al by 30.5 cycles
0.3Ga
0.7The n-Al in As/n-AlAs and 10 cycles
0.3Ga
0.7As/n-Al
0.9Ga
0.1As constitutes.N-Al
0.3Ga
0.7As, n-AlAs and n-Al
0.9Ga
0.1The thickness of each of As layer is λ/4.
Figure 19 is the diagram that is used to explain the relation between optics output and the electric current, and it shows experimental result.At Figure 19, vertical axis is represented optics output, and trunnion axis is represented electric current.
Curve k9 illustrates the optics output of surface emitting laser element of the present invention and the relation between the electric current, and curve k10 illustrates the optics output of surface emitting laser element of comparative example and the relation between the electric current.The surface emitting laser element that by the area of observing illuminating part is 16 square microns carries out this experiment at 20 degrees centigrade continuous wave (CW).
Obvious from the experimental result of Figure 19, to compare with the saturation value of the optics output of the surface emitting laser element of comparative example, the saturation value of the optics output of surface emitting laser element of the present invention moves much towards high current value lateral deviation, has obtained high output.
In surface emitting laser element of the present invention, because the low-index layer 1021 in reflector 102 on substrate 101 sides is to be made of the AlAs with high heat conductance, the temperature of element rises controlled during the good and element work of the heat dissipation of substrate 101 sides.
Therefore, the AlAs that has high heat conductance by use constitutes the low-index layer 1021 of being located at the reflector 102 in the substrate 101, and adjusting to form makes the heat that produces in active layer 104 diffuse to substrate 101, prove the output characteristic of this surface emitting laser element experimentally, the output characteristic of this surface-emitting laser array of offering a piece of advice is improved.
The surface-emitting laser array of present embodiment can be provided with 40 surface emitting laser elements that are arranged to 4 row * 10 row, is similar to surface-emitting laser array 100A (seeing Figure 13).
Surface-emitting laser array of the present invention can be provided with by following mode, and the resonator barrier layer 103 of surface emitting laser element 1-40,151-182,103A comprise by Ga
0.5In
0.5The surface emitting laser element that P constitutes.Surface-emitting laser array of the present invention can be provided with by following mode, and the resonator barrier layer 103 of surface emitting laser element 1-40,151-182,103A comprise by (Al
0.7Ga
0.3)
0.5In
0.5P/Ga
0.5In
0.5The surface emitting laser element that P constitutes.In this case, (Al
0.7Ga
0.3)
0.5In
0.5P is arranged in active layer 104 sides, and Ga
0.5In
0.5P is arranged in reflector 102 sides.
To (Al
0.7Ga
0.3)
0.5In
0.5Locked and the increase of the charge carrier of P active layer 104, the heat that produces in active layer 104 can diffuse to reflector 102 more.Ga
0.5In
0.5The thermal conductivity of P is higher than (Al
0.7Ga
0.3)
0.5In
0.5P.
Table 1 illustrates resonator barrier layer 103,105; Under the situation that the trap layer 1041 of 103A, 105A/ active layer 104 is formed by AlGaAs/AlGaAs, AlGaInP/GaInPAs respectively, resonator barrier layer 103,105; Band gap difference between band gap difference between 103A, 105A and the trap layer 1041 and base layer 1042 and the trap layer 1041.
Table 1
When AlGaAs and AlGaAs are respectively applied for resonator barrier layer 103,105; During the trap layer 1041 of 103A, 105A and active layer 104, emission wavelength is resonator barrier layer 103,105 in the surface emitting laser element of 780nm; Band gap difference between 103A, 105A and the trap layer 1041 is 465.9meV, and the band gap difference of building between layer 1042 and the trap layer 1041 is 228.8meV.
When AlGaAs and AlGaAs are respectively applied for resonator barrier layer 103,105; During the trap layer 1041 of 103A, 105A and active layer 104, emission wavelength is resonator barrier layer 103,105 in the surface emitting laser element of 850nm; Band gap difference between 103A, 105A and the trap layer 1041 is 602.6meV, and the band gap difference of building between layer 1042 and the trap layer 1041 is 365.5meV.
On the other hand, be respectively applied for resonator barrier layer 103,105 as AlGaInP and GaInPAs; During the trap layer 1041 of 103A, 105A and active layer 104, emission wavelength is resonator barrier layer 103,105 among surface emitting laser element 1-40, the 151-182 of 780nm; Band gap difference between 103A, 105A and the trap layer 1041 is 767.3meV, and the band gap difference of building between layer 1042 and the trap layer 1041 is 463.3meV.
Therefore, use AlGaInP and GaInPAs to construct resonator barrier layer 103,105 respectively; The trap layer 1041 of 103A, 105A and active layer 104, resonator barrier layer 103,105; Band gap difference between 103A, 105A and the trap layer 1041 and build between layer 1042 and the trap layer 1041 band gap difference with before compared increase.
As a result, the remarkable improvement of effect and surface emitting laser element 1-40,151-182 that charge carrier locks onto trap layer 1041 can launch the emission light of higher output, simultaneously with low threshold value vibration.Because active layer 104 comprises the GaInPAs with compressive strain, separate feasible gain increase by being with of heavy hole and light hole and become big.
Therefore, threshold value ground be can hang down and high-gain and high output emission light obtained.The surface emitting laser element (780nm or 850nm) that use is made by almost identical with the GaAs substrate AlGaAs system of lattice constant can't be realized this effect.
The high-gain of the active layer 104 that constitutes along with the improvement of charge carrier locking and by the distortion quantum well structure, the threshold current of surface emitting laser element 1-40,151-182 can reduce, reflector 106,106A reflectivity that optics extracts side reduce, and can obtain high output emission.
Because the material that active layer 104 comprises does not contain aluminium, it can be considered as non-aluminum active district (mqw active layer and adjacent layer), when the oxygen that comprises when these zones reduces, can control the formation of non-radiative recombination center, and can realize long-life work.This makes optical writing unit or light source cell recycling.
In the above-described embodiments, the low-index layer 1021 in reflector 102 is to be made of AlAs.Alternatively, the low-index layer 1021 that is arranged to the reflector 102 of more close substrate 101 sides than active layer 104 should only comprise the semi-conducting material that oxidation rate and selective oxide layer 107 are equal or higher.Because selective oxide layer 107 is normally by Al
xGa
1-xAs (x 〉=0.9) constitutes, and the low-index layer 1021 that is made of AlAs has and the equal or higher oxidation rate of the oxidation rate of selective oxide layer 107 usually.
For comprise aluminium the layer situation, if aluminium content difference, aluminium content high the layer oxidation rate higher, and if aluminium content identical, then thickness big the layer oxidation rate higher.
In the above-described embodiments, all low-index layers 1021 in reflector 102 constitute by AlAs.Alternatively, reflector 102 should only be equipped with the low-index layer (Al that oxidation rate is higher than selective oxide layer 107 in active layer 104 sides
xGa
1-xAs (x 〉=0.9)).This is because near the thermal conductivity height heating source (=active layer 104) partly makes the heat that produces in active layer 104 diffuse to the better effects if of substrate 101.
In the above-described embodiments, the platform etching stops at the centre of resonator barrier layer 103,103A.Alternatively, in surface-emitting laser array 100,100A, the platform etching stops at the inside of resonator (resonator barrier layer 103, active layer 104 and resonator barrier layer 105) or the interface in resonator and reflector 106.In surface-emitting laser array 200, the platform etching stops at the inside of low-index layer 1061A of the inside of resonator (resonator barrier layer 103A, active layer 104 and resonator barrier layer 105A) or reflector 106A or the interface of low-index layer 1061A and high refractive index layer 1062.Usually, the platform etching stops at reflector 106 sides, rather than reflector 102.
Figure 20 is the plane graph of surface-emitting laser array in the embodiment of the invention.As shown in figure 20, the surface-emitting laser array 300 of present embodiment comprises substrate 310, surface emitting laser element 311-320 and weld pad 321-330.
Surface emitting laser element 311-320 is arranged to the one dimension form on substrate 310.Surface emitting laser element 311-320 is made of above-mentioned surface emitting laser element 1-40 or surface emitting laser element 151-182.
Weld pad 321-330 is arranged to around surface emitting laser element 311-320 respectively and is connected to p type electrode 111.Threshold value rising Be Controlled, and by on same substrate 310, assembling many emitting laser device 311-320 that can realize high output services, owing to for example can realize simultaneously the mass data transmission of transmitted beam, when it is used for optical communication, can realize high-speed communication.
Because the exothermic character of the heat that produces in active layer 104 is good and work in low-power consumption, therefore when using equipment and specifically using, surface emitting laser element 311-320 can reduce temperature and rise.
The manufacture method of the surface-emitting laser array in the embodiment of the invention then, is described with reference to figure 21A-23.
(1) crystalline growth of use metal-organic chemical vapor deposition equipment (MOCVD) method, semiconductor layer comprises that reflector (following reflector) 102, resonator barrier layer (following barrier layer) 103, active layer 104, resonator barrier layer (going up the barrier layer) 105, selective oxide layer 107 and reflector (going up the reflector) 106 are layered on the substrate 101 one by one and (sees Figure 21 A).The semiconductor layering product of hereinafter, stacked these layers is called the multi-lager semiconductor film.
(2) by photoetching method, (seeing Figure 21 B) gone up on the surface (this surface is relative with substrate 101) that is formed at this multi-lager semiconductor film with the corresponding photomask PM of illuminating part and array boundary portion pattern.In this example, a chip has nine illuminating parts (3 * 3).
(3) use photomask PM as etching mask, form the shape (seeing Figure 21 C) of platform by dry etching.Hereinafter, be called " platform " for convenience of shape with platform.At this moment, also in the part that is used as array boundary portion, carry out etching.In this example, carry out etching and arrive barrier layer 103 down until the etching bottom.
(4) remove photomask PM.
(5) the current blocking structure is formed in the selective oxide layer 107 (seeing Figure 21 D).
(6) pattern that is used for the etching mask of etched array boundary portion forms by photoetching method.
(7) the array boundary portion is carried out etching, arrive substrate 101 (seeing Figure 22 A) until the etching bottom.Each array part respectively with other array portion from or cut apart.
(8) form by SiO
2, SiN and any one diaphragm of making 109 of SiON be as passivating film (seeing Figure 22 B).
(9) be etched with the passivating film of removing in the bottom of the cutting part of the contact on platform top and array boundary portion (seeing Figure 22 C).At this moment, the passivating film part on the side of array boundary portion is masked, so that not etched.
(10) form p type electrode 111 (seeing Figure 22 D) by stripping means.Part except electrode is masked by photoresist in advance, and after the vapour deposition of electrode material, carries out ultrasonic cleaning in the solution of for example acetone, and wherein photoresist is dissolved in this solution.Cr/AuZn/Au multilayer film or Ti/Pt/Au multilayer film are used as p type electrode material.
(11) back side of substrate 101 is ground to predetermined thickness (about 100 microns) afterwards, forms n type electrode 112 (seeing Figure 23).N type electrode 112 is to be made of the AuGe/Ni/Au multilayer film.
(12) form lead-in wire, this lead-in wire is used to set up the electrode pad (not shown) and is connected with electricity between the corresponding p type electrode 111 corresponding electrode pad with illuminating part.Opening is formed at the center of p type electrode 111, and laser beam is from this opening emission.Thus, each is used as illuminating part.
(13) cutting part along the bottom of array boundary portion cuts, thereby wafer is divided into chip.
So the surface-emitting laser array 400 of the present embodiment of making is shown in Figure 24.Because surface-emitting laser array 400 is made into the chip that is divided during fabrication, therefore can reduce the bending of substrate 101.Therefore, fine ratio of product improves and can realize low-cost production.
Since in the surface-emitting laser array 350 down the protected film in the side of reflector 102 cover, the low-index layer that therefore can suppress reflector 102 down is oxidized with the reaction of the aqueous vapor in the atmosphere, thereby avoids taking place distortion and destruction occurs.That is to say, can prevent the degeneration that occurs as time passes, and can form reliable surface-emitting laser array.
[application examples]
Figure 25 is the diagram of composition that the optical scanner of the surface-emitting laser array 100A that uses Figure 13 is shown.
As shown in figure 25, optical scanner 400 comprises light source 401, coupled lens 402, aperture 403, anamorphote (anamorphic lens) 404, polygon mirror 405, deflector side scanning lens 406, image planes side scanning lens 407, dustproof glass 408, image planes 409, anti-sound glass 410 and virtual lens (dummylens) 411.
Light source 401 is to be made of surface-emitting laser array 100A shown in Figure 13.Enter coupled lens 402 from 40 light beams of light source 401 emissions, coupled lens 402 converts thereof into weak divergent beams and its guiding is entered anamorphote 404.
The light beam that incides anamorphote 404 is deformed lens 404 conversions, thus along main scanning direction be parallel and be focused at polygon mirror 405 along sub-scanning direction near.
Subsequently, light beam enters polygon mirror 405 by aperture 403, virtual lens 411 and anti-sound glass 410.
Light beam is partial to by polygon mirror 405, passes dustproof glass 408, and image information is imaged onto on the image planes 409 by deflector side scanning lens 406 and image planes side scanning lens 407.
Light source 401 and coupled lens 402 are fixed to parts made of aluminum usually.
Light source 401 is to be made of the surface-emitting laser array 100A that comprises 40 surface emitting laser element 1-40, by adjusting the luminous sequential of 40 surface emitting laser element 1-40, these surface emitting laser elements are arranged in the following manner, promptly, arrange by equal intervals c2 along the gap of sub-scanning direction from ten normals of the straight line of arranging along sub-scanning direction at ten centers of ten surface emitting laser element 1-10/11-20/21-30/31-40, on photoreceptor, can be considered as identical with following situation, that is, light source is positioned on the straight line by equal intervals along sub-scanning direction.
By the interelement gap c2 of adjustment surface emitting laser element 1-40 and the enlargement ratio of optical system, can adjust the interval that writes along the optics of sub-scanning direction.That is to say, as surface-emitting laser array 100A (40 passages) when being used as light source 401, because interelement gap c2 is set to 2.4 microns as mentioned above, the enlargement ratio by optical system is set to about 2.2 times, and the high density that then can carry out 4800dpi writes.
By increasing component number along main scanning direction, make along the interval c2 between the adjacently situated surfaces radiated element of main scanning direction layout littler, make along the interval d between the surface emitting laser element of sub-scanning direction layout littler, perhaps reduce the enlargement ratio of optical system, the high-density optical that then can obtain to have high quality printing writes.In this case, by adjusting the luminous sequential of light source 401, it is controllable easily at interval that the optics of main scanning direction writes.
Therefore, in optical scanner 400, can write 40 points (dot) simultaneously and can carry out high speed printing.By increasing the number of surface-emitting laser array 100A inner surface emitting laser element, can carry out high speed printing more.
Because by using surface emitting laser element 1-40,151-182 to be used for surface-emitting laser array 100A, the life-span of surface-emitting laser array 100A can significantly improve, this optical writing unit or light source are recycling.
In optical scanner 400, light source 401 can be made of the surface-emitting laser array 100 of Fig. 1 or the surface-emitting laser array 200 of Figure 14.
Figure 26 is the diagram that the composition of laser printer is shown.As shown in figure 26, laser printer 500 comprises photoconductor drum 501, optical scanner 502, cleaning unit 503, charhing unit 504, developing cell 505, transfer printing unit 506 and fixation unit 507.
In laser printer 500, when starting working, 504 pairs of photoconductor drum 501 surface chargings of charhing unit, and optical scanner 502 uses a plurality of laser beams to form sub-image on photoconductor drum 501.
Developing cell 505 supplying toners are to the sub-image that is formed by optical scanner 502, to form toner image.Transfer printing unit 506 is transferred to recording medium with toner image, and fixation unit 507 is fixed to recording medium with the toner image of transfer printing.Thus, toner image is transferred on record-paper 508, and toner image is by fixation unit 507 heat fixers afterwards, and the formation of electrophotographic image is finished.
On the other hand, electron discharge unit (not shown) by to photoconductor drum surface discharge remove photoconductor drum 501 lip-deep sub-images, and cleaning unit 503 is removed photoconductor drum 501 surface and is gone up residual toners.Thus, repeat above-mentioned electrofax operation, make sequence of operations high speed output image continuously.The image processing system that laser printer 500 constitutes in the embodiment of the invention.
Figure 27 is the diagram that the composition of image processing system is shown.As shown in figure 27, image processing system 600 comprises photoreceptor 1Y, 1M, 1C, 1K, charhing unit 2Y, 2M, 2C, 2K, developing cell 4Y, 4M, 4C, 4K, cleaning unit 5Y, 5M, 5C, 5K, transfer printing/ charhing unit 6Y, 6M, 6C, 6K, fixation unit 610, optical writing unit 620 and transport tape 630.At Figure 27, Y represents yellow, and M represents carmetta, and C represents cyan, and K represents black.
Developing cell 4Y, 4M, 4C, 4K form toner image based on this electrostatic image on the surface of photoreceptor 1Y, 1M, 1C, 1K.
Transfer printing/ charhing unit 6Y, 6M, 6C, 6K are transferred to record-paper 640 one by one with the toner image of every kind of color.At last, fixation unit 610 is fixed to record-paper 640 with the image of transfer printing.
Although because versicolor colo(u)r space (color gap) can appear in factors such as mechanical accuracy, image processing system 600 is designed for video high density information, and can improve the compensation accuracy of colo(u)r space by the unlatching sequential of adjusting the surface emitting laser element of the surface-emitting laser array of use in the optical writing unit 620.
Figure 28 is the diagram of optics delivery module.As shown in figure 28, optics delivery module 700 comprises surface-emitting laser array 701 and optical fiber 702.
Surface-emitting laser array 701 is constructed in the following manner, that is, surface emitting laser element 1-40,151-182 are arranged to the one dimension form.Optical fiber 702 is to be made of many plastic fibers (POF).These many plastic fibers are arranged as a plurality of surface emitting laser element 1-40, the 151-182 corresponding to surface-emitting laser array 701.
In optics delivery module 700, send to corresponding plastic fiber respectively from surface emitting laser element 1-40,151-182 emitted laser bundle.The basic plastic fiber of acryl (acryl) has absorption loss bottom at 650nm, and among the 650nm surface emitting laser element developing.Yet it has the hot properties of not expecting, and does not drop into practical as yet.
LED (light-emitting diode) still is difficult to realize High Speed Modulation as light source.Need to use semiconductor laser to be used to realize that the high speed that surpasses 1Gbps transmits.
The emission wavelength of above-mentioned surface emitting laser element 1-40,151-182 is 780nm.Radioactive nature improves, and provide high output, and hot properties is good.The absorption loss of optical fiber is big, and optics delivery module 700 only can be used for short distance and transmit.
In the optical communication field, in order to transmit mass data simultaneously, developed the parallel convey of using laser array, wherein integrated a plurality of semiconductor lasers in this laser array.Adopt this technology, can carry out high-speed parallel and transmit, and can transmit mass data simultaneously.
In optics delivery module 700, surface emitting laser element 1-40,151-182 are corresponding with optical fiber respectively.Alternatively, the some surface emitting laser elements with different emission can be arranged to one dimension or two-dimensional array form, and transfer rate can increase by carrying out wavelength division multiplexing to transmit.
Moreover, optics delivery module 700 makes and the optical fiber telecommunications system that low-cost optics delivery module can be provided and use it has wherein made up the surface-emitting laser array and the cheap POF that use surface emitting laser element 1-40,151-182 in the optics delivery module 700.
Because the optical fiber telecommunications system cost is low, its be used for family expenses, office with, install in short-range data communication aspects such as use be effective.
Figure 29 is the improved sectional view of the surface emitting laser element 1-32 of Fig. 1.
In this embodiment, each surface emitting laser element 1-32 of Fig. 1 is that surface emitting laser element 1B by Figure 29 constitutes.As shown in figure 29, in surface emitting laser element 1B, the resonator barrier layer 103 of the surface emitting laser element 1 of Fig. 3 is replaced by resonator barrier layer 103B, and all the other compositions are identical with surface emitting laser element 1.
Figure 30 is near the sectional view that illustrates the active layer 104 of surface emitting laser element 1B of Figure 29.As shown in figure 30, the low-index layer 1021 contact resonator barrier layer 103B in reflector 102.The low-index layer 1021 of resonator barrier layer 103B contact reflex layer 102 and the base layer 1042 of active layer 104.
In surface emitting laser element 1B, resonator barrier layer 103B, 105 and active layer 104 constitute resonators, and this resonator along the thickness of the direction vertical with substrate 101 be set to surface emitting laser element 1B a wavelength (=λ).That is to say, resonator barrier layer 103B, 105 and active layer 104 constitute single wavelength resonances device.
The surface-emitting laser array 100 that comprises surface emitting laser element 1B is made according to the manufacturing process of Fig. 4 A-6B.In this case, in the technology of Fig. 4 A, use trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form the Ga of resonator barrier layer 103B by the MOCVD method
0.5In
0.5P.
(= resonator barrier layer 103B, 105 and active layer 104) comprises In because this resonator, and it constitutes absorbed layer, and this absorbed layer absorbs the etch depth difference of direction in surperficial when forming the platform structure.
When using surface emitting laser element 1B to make surface-emitting laser array 100, the etching that is used to form the platform structure stops at the centre of resonator (resonator barrier layer 103B), and the etch depth discrepancy delta d between interelement part 120 and the par 130 diminishes.
Therefore, according to the present invention, can reduce and do not use virtual component along the etch depth difference of direction DR1 in the surface of substrate 101.
Because the etch depth discrepancy delta d between interelement part 120 and the par 130 is little, the possibility of cutting off lead-in wire W1-W32 can reduce.
Because weld pad 51-82 is arranged in the par 130, can prevent when wire bond that therefore this structure from being damaged by weld pad 51-82.
Opposite with surface emitting laser element 1, surface emitting laser element 1B is provided with in the following manner, that is, resonator barrier layer 103B is greater than (Al by thermal conductivity
0.7Ga
0.3)
0.5In
0.5The Ga of P
0.5In
0.5P constitutes, and the major part of the heat that produces in active layer 104 can emit to substrate 101 sides.
In the above-described embodiments, the bottom of platform structure is positioned at the centre of resonator barrier layer 103B.Alternatively, the bottom of this structure can be positioned at along the optional position of the thickness direction of the resonator (= resonator barrier layer 103B, 105 and active layer 104) that comprises In.
Figure 31 is the improved sectional view of the surface emitting laser element 1-32 of Fig. 1.In the present embodiment, each of the surface emitting laser element 1-32 of Fig. 1 is that surface emitting laser element 1C by Figure 31 constitutes.
As shown in figure 31, in surface emitting laser element 1C, the resonator barrier layer 103 of the surface emitting laser element 1 of Fig. 3 is substituted by resonator barrier layer 103C, and all the other compositions are identical with surface emitting laser element 1.
Figure 32 is near the sectional view that illustrates the active layer 104 of surface emitting laser element 1C of Figure 31.Shown in figure 32, resonator barrier layer 103C is made of barrier layer 1031 and 1032.Barrier layer 1031 forms the low-index layer 1021 of contact reflex layer 102, and barrier layer 1032 forms the base layer 1042 of contact active layer 104.
Barrier layer 1031 is by Ga
0.5In
0.5P constitutes.Barrier layer 1032 is by (Al
0.7Ga
0.3)
0.5In
0.5P constitutes.
In surface emitting laser element 1C, resonator barrier layer 103C, 105 and active layer 104 constitute resonators, and this resonator along the thickness of the direction vertical with substrate 101 be set to surface emitting laser element 1C a wavelength (=λ).That is to say, resonator barrier layer 103C, 105 and active layer 104 constitute single wavelength resonances device.
The surface-emitting laser array 100 that comprises surface emitting laser element 1C is made according to the manufacturing process of Fig. 4 A-6B.In this case, in the technology of Fig. 4 A, use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form (the Al of resonator barrier layer 103C by the MOCVD method
0.7Ga
0.3)
0.5In
0.5P/Ga
0.5In
0.5P.
(= resonator barrier layer 103C, 105 and active layer 104) comprises In because this resonator, and it constitutes absorbed layer, and this absorbed layer absorbs the etch depth difference of direction in surperficial when forming the platform structure.
When using surface emitting laser element 1C to make surface-emitting laser array 100, the etching that is used to form the platform structure stops at the centre of resonator (resonator barrier layer 103C), and the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 diminishes.
Therefore, according to the present invention, can reduce and do not use virtual component along the etch depth difference of direction DR1 in the surface of substrate 101.
Because the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 is little, the possibility of cutting off lead-in wire W1-W32 can reduce.
Because weld pad 51-82 is arranged in the par 130, can prevent when wire bond that therefore this structure from being damaged by weld pad.
In surface emitting laser element 1C, the barrier layer 1032 of contact active layer 104 is by wide bandgap material (Al among the 103C of resonator barrier layer
0.7Ga
0.3)
0.5In
0.5P constitutes.
(=AlAs) barrier layer 1031 is by Ga to the low-index layer 1021 of contact reflex layer 102
0.5In
0.5P constitutes.For this reason, opposite with surface emitting laser element 1, the major part of the heat that produces in active layer 104 can emit to substrate 101 sides, and can provide be included in surface emitting laser element 1 in the identical charge carrier degree of charge carrier degree.
In the above-described embodiments, the bottom of platform structure is positioned at the centre of resonator barrier layer 103C.Alternatively, the bottom of this structure can be positioned at along the optional position of the thickness direction of the resonator (= resonator barrier layer 103C, 105 and active layer 104) that comprises In.
Figure 33 is the improved sectional view of the surface emitting laser element 1-32 of Fig. 1.
In the present embodiment, each of the surface emitting laser element 1-32 of Fig. 1 is that surface emitting laser element 1D by Figure 33 constitutes.As shown in figure 33, in surface emitting laser element 1D, the resonator barrier layer 103 of the surface emitting laser element 1 of Fig. 3 is substituted by resonator barrier layer 103D, and all the other compositions are identical with surface emitting laser element 1.
Figure 34 is near the sectional view that illustrates the active layer 104 of surface emitting laser element 1D of Figure 33.As shown in figure 34, resonator barrier layer 103D is made of barrier layer 1031A and 1032A.Barrier layer 1031A forms the low-index layer 1021 of contact reflex layer 102, and barrier layer 1032A forms the base layer 1042 of contact active layer 104.
In surface emitting laser element 1D, resonator barrier layer 103D, 105 and active layer 104 constitute resonators, and this resonator along the thickness of the direction vertical with substrate 101 be set to surface emitting laser element 1D a wavelength (=λ).That is to say, resonator barrier layer 103D, 105 and active layer 104 constitute single wavelength resonances device.
The surface-emitting laser array 100 that comprises surface emitting laser element 1D is made according to the manufacturing process of Fig. 4 A-6B.In this case, in the technology of Fig. 4 A, use trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) be raw material, form (the Al of resonator barrier layer 103D by the MOCVD method
0.7Ga
0.3)
0.5In
0.5P, and use trimethyl aluminium (TMA), trimethyl gallium (TMG) and arsine (AsH
3) be raw material, form the AlGaAs of resonator barrier layer 103D.
Because barrier layer 1032A, active layer 104 and the resonator barrier layer 105 of resonator barrier layer 103D comprise In, it constitutes absorbed layer, and this absorbed layer absorbs along the etch depth difference of direction in the surface when forming the platform structure.
When using surface emitting laser element 1D to make surface-emitting laser array 100, the etching that is used to form the platform structure stops at the centre of the barrier layer 1032A of resonator barrier layer 103D, and the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 diminishes.
Therefore, according to the present invention, can reduce and do not use virtual component along the etch depth difference of direction DR1 in the surface of substrate 101.
Because the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 is little, the possibility of cutting off lead-in wire W1-W32 can reduce.Because weld pad 51-82 is arranged in the par 130, can prevent when wire bond that therefore this structure from being damaged by weld pad 51-82.
In surface emitting laser element 1D, the barrier layer 1032A of contact active layer 104 is by wide bandgap material (Al among the 103D of resonator barrier layer
0.7Ga
0.3)
0.5In
0.5P constitutes.(=AlAs) barrier layer 1031A is made of AlGaAs the low-index layer 1021 of contact reflex layer 102.
Therefore, opposite with surface emitting laser element 1, the major part of the heat that produces in active layer 104 can emit to substrate 101 sides, and can provide be included in surface emitting laser element 1 in the identical charge carrier degree of charge carrier degree.
In the above-described embodiments, the bottom of platform structure is positioned at the centre of resonator barrier layer 103D.Alternatively, the bottom of this structure can be positioned at along the optional position of the thickness direction on the barrier layer 1032A, active layer 104 and the resonator barrier layer 105 that comprise In.
Figure 35 is the improved sectional view of the surface emitting laser element 1-32 of Fig. 1.
In the present embodiment, each of the surface emitting laser element 1-32 of Fig. 1 is that surface emitting laser element 1E by Figure 33 constitutes.As shown in figure 35, in surface emitting laser element 1E, the resonator barrier layer 103 of the surface emitting laser element 1 of Fig. 3 and active layer 104 are substituted by resonator barrier layer 103E and active layer 104A respectively, and all the other compositions are identical with surface emitting laser element 1.
In surface emitting laser element 1E, the bottom of platform structure is positioned at the centre on resonator barrier layer 105.
Figure 36 is near the sectional view of active layer 104A that the surface emitting laser element 1E of Figure 35 is shown.As shown in figure 36, resonator barrier layer 103E forms the low-index layer 1021 and the active layer 104A of contact reflex layer 102.
In surface emitting laser element 1E, resonator barrier layer 103E, 105 and active layer 104A constitute resonator, and this resonator along the thickness of the direction vertical with substrate 101 be set to surface emitting laser element 1E a wavelength (=λ).That is to say, resonator barrier layer 103E, 105 and active layer 104A constitute single wavelength resonances device.
The surface-emitting laser array 100 that comprises surface emitting laser element 1E is made according to the manufacturing process of Fig. 4 A-6B.
In this case, in the technology of Fig. 4 A, use trimethyl aluminium (TMA), trimethyl gallium (TMG) and arsine (AsH
3) be raw material, form the Al of resonator barrier layer 103E by the MOCVD method
0.6Ga
0.4The Al of As, trap layer 1041A
0.12Ga
0.88As and the Al that builds layer 1042A
0.3Ga
0.7As.
Because resonator barrier layer 105 comprises In, it constitutes absorbed layer, and this absorbed layer absorbs along the etch depth difference of direction in the surface when forming the platform structure.
Because when making comprised the surface-emitting laser array 100 of surface emitting laser element 1E, the etching that is used to form the platform structure stopped at the centre on resonator barrier layer 105, the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 diminishes.
Therefore, according to the present invention, can reduce and do not use virtual component along the etch depth difference of direction DR1 in the surface of substrate 101.
Because the etch depth discrepancy delta d between arrangements of elements portion 120 and the par 130 is little, the possibility of cutting off lead-in wire W1-W32 can reduce.Because weld pad 51-82 is arranged in the par 130, can prevent when wire bond that therefore this structure from being damaged by weld pad 51-82.
In the present embodiment, in the reflector 102, resonator barrier layer 103E, active layer 104A, resonator barrier layer 105, reflector 106, selective oxide layer 107 and the contact layer 108 that constitute surface emitting laser element 1E, only resonator barrier layer 105 comprises In.Alternatively, this embodiment only can be configured to that resonator barrier layer 103E comprises In, and perhaps only active layer 104A comprises In.
When only resonator barrier layer 103E comprised In, resonator barrier layer 103E constituted absorbed layer, and this absorbed layer absorbs along the etch depth difference of direction in the surface when forming the platform structure, and the bottom of platform structure is positioned at the centre of resonator barrier layer 103E.
When only active layer 104A comprised In, active layer 104A constituted absorbed layer, and this absorbed layer absorbs along the etch depth difference of direction in the surface when forming the platform structure, and the bottom of platform structure is positioned at the centre of active layer 104A.
In the above-described embodiments, the low-index layer 1021 in reflector 102 is to be made of AlAs.Alternatively, according to the present invention, low-index layer 1021 can be by Al
xGa
1-xAs (0.9≤x≤1) constitutes.
Surface-emitting laser array of the present invention can be made of a plurality of surface emitting laser elements, and these surface emitting laser elements can be arranged to the two dimensional form except 4 row * 8 row forms.
The invention is not restricted to the foregoing description, and under the situation that does not deviate from scope of the present invention, can carry out modification and adjustment.
The present invention is based on following application and advocates the priority of following application: the applying date is to be that the Japanese patent application 2006-226562 and applying date on August 23rd, 2006 is the Japanese patent application 2007-134856 on May 22nd, 2007 Japanese patent application 2006-226561, the applying date on August 23rd, 2006.
Claims (19)
1. surface-emitting laser array, described surface-emitting laser array comprises a plurality of surface emitting laser elements, and each of described a plurality of surface emitting laser elements comprises:
First reflector is formed on the substrate to constitute the semiconductor Bragg reflector;
Resonator forms described first reflector of contact and comprises active layer on described first reflector; And
Selective oxide layer being formed at above described first reflector on the described resonator and contacting described resonator to constitute described semiconductor Bragg reflector, is contained in described second reflector in second reflector,
Wherein said first reflector, described resonator and described second reflector constitute resonant structure, described first reflector comprises low-index layer at least in described active layer side, the oxidation rate of described low-index layer is equivalent to or is higher than the oxidation rate that is included in the selective oxide layer in described second reflector, described resonator is to be made by the AlGaInPAs sill that comprises In at least, and the bottom of the platform structure in each surface emitting laser element is arranged in the layer that the AlGaInPAs sill makes and is positioned at above described selective oxide layer below and described first reflector.
2. surface-emitting laser array as claimed in claim 1, the etch-rate of wherein said resonator is less than the etch-rate in described second reflector.
3. surface-emitting laser array as claimed in claim 1, wherein said second reflector comprise the layer of being made by the AlGaInPAs sill that comprises In at least in described active layer side.
4. surface-emitting laser array as claimed in claim 1, or interface described second reflector and resonator between inner, the bottom of wherein said structure at described resonator.
5. surface-emitting laser array as claimed in claim 1, wherein said first reflector comprise the described low-index layer of being made by AlAs above the whole zone of described surface emitting laser element.
6. surface-emitting laser array as claimed in claim 1, the described selective oxide layer that comprises in wherein said second reflector constitute selective oxidation type electric current narrow.
7. surface-emitting laser array as claimed in claim 1, the difference between the etch depth of the etch depth in the interelement gap of wherein said a plurality of surface emitting laser elements and the periphery of described a plurality of surface emitting laser elements be equal to or less than each surface emitting laser element the bundle emission wavelength 1/2.
8. surface-emitting laser array as claimed in claim 7, interelement gap between adjacent two of wherein said a plurality of surface emitting laser elements is set to one of less in the following gap: the gap between the gap in described a plurality of surface emitting laser elements between the top side location of two platform structures and the basal surface position of described two platform structures, and described interelement gap is equal to or less than 20 microns.
9. surface-emitting laser array as claimed in claim 1, the protected film in the side in wherein said first reflector covers.
10. surface-emitting laser array as claimed in claim 9, wherein said diaphragm is by SiO
2, SiN and SiON any one make.
11. surface-emitting laser array as claimed in claim 1, the aluminium content of described low-index layer of resonator side that wherein is arranged in described first reflector is greater than the aluminium content of described selective oxide layer.
12. surface-emitting laser array as claimed in claim 1, the aluminium content of described low-index layer that wherein is arranged in the resonator side in described first reflector equals the aluminium content of described selective oxide layer, and the thickness of described low-index layer of resonator side that is arranged in described first reflector is greater than the thickness of described selective oxide layer.
13. an optical scanner comprises:
Surface-emitting laser array as claimed in claim 1;
The deflection unit, deflection is by a plurality of laser beams of described surface-emitting laser array emission; And
Scanning optical element, with laser beam from described deflection unit guides on the scanning of a surface of photoreceptor.
14. an image processing system wherein is provided with optical scanner as claimed in claim 13.
15. an image processing system, surface-emitting laser array wherein as claimed in claim 1 is set to launch the light source of a plurality of laser beams.
16. a surface emitting laser element has the platform structure of emission of lasering beam, described surface emitting laser element comprises:
Substrate;
First reflector is formed on the described substrate to constitute the semiconductor Bragg reflector;
Resonator forms described first reflector of contact and comprises active layer on described first reflector;
Second reflector forms the described resonator of contact to constitute described semiconductor Bragg reflector on described resonator;
Wherein, described first reflector, described resonator and described second reflector constitute resonant structure, on the thickness direction of described resonator, form absorbed layer to the described resonator of small part, described absorbed layer is made and is arranged as the etch depth difference that absorbs along direction in the surface of described substrate when forming described structure by the AlGaInPAs sill
The bottom of wherein said structure is positioned at described absorbed layer along the direction vertical with described substrate.
17. surface emitting laser element as claimed in claim 16, wherein said absorbed layer is formed in the whole zone of described resonator along the thickness direction of described resonator.
18. surface emitting laser element as claimed in claim 16, wherein said absorbed layer is formed in the whole zone of described resonator along the thickness direction of described resonator, and partly forms along the thickness direction in described second reflector.
19. the manufacture method of a surface-emitting laser array, described surface-emitting laser array comprises: arrangements of elements portion is arranged on the substrate and is furnished with a plurality of surface emitting laser elements; And par, be arranged on the described substrate and along direction in the surface of described substrate be arranged in described arrangements of elements portion around, each of described a plurality of surface emitting laser elements comprises the platform structure of emission of lasering beam, and comprise and being formed on the described substrate to constitute first reflector of semiconductor Bragg reflector, on described first reflector, form the resonator that contacts described first reflector and comprise active layer, on described resonator, form the described resonator of contact to constitute second reflector of described semiconductor Bragg reflector, wherein said first reflector, described resonator and described second reflector constitute resonant structure, and described par and described arrangements of elements portion comprise absorbed layer, described absorbed layer is arranged as the etch depth difference that absorbs along direction in the described surface when forming described structure, form described absorbed layer to the described resonator of small part on the thickness direction of described resonator, described manufacture method comprises the steps:
On described substrate, form the multi-lager semiconductor film; And
The described multi-lager semiconductor film of etching makes described arrangements of elements portion and par form so that the bottom of described structure is positioned at described absorbed layer.
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| JP226561/2006 | 2006-08-23 | ||
| JP226562/2006 | 2006-08-23 | ||
| JP2006226562 | 2006-08-23 | ||
| JP2006226561A JP2008053353A (en) | 2006-08-23 | 2006-08-23 | Surface emitting laser array, surface emitting laser element used therefor, and method for manufacturing the array |
| JP134856/2007 | 2007-05-22 | ||
| JP2007134856A JP5442940B2 (en) | 2006-08-23 | 2007-05-22 | Surface emitting laser array, optical scanning device and image forming apparatus provided with the same |
| PCT/JP2007/066508 WO2008023813A1 (en) | 2006-08-23 | 2007-08-20 | Surface-emitting laser array, optical scanning device, and image forming device |
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| CN201110037067.9A Division CN102136677B (en) | 2006-08-23 | 2007-08-20 | Surface-emitting laser array, optical scanning device, and image forming device |
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| JP5636686B2 (en) * | 2009-06-04 | 2014-12-10 | 株式会社リコー | Surface emitting laser array, optical scanning device, image forming apparatus, and method of manufacturing surface emitting laser array |
| CN101863452B (en) * | 2010-06-10 | 2015-06-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Production method of part for improving nanometer array structure on insulating substrate |
| JP2012209534A (en) | 2011-03-17 | 2012-10-25 | Ricoh Co Ltd | Surface-emitting laser element, atomic oscillator, and method for checking surface-emitting laser element |
| JP2013243329A (en) | 2011-07-07 | 2013-12-05 | Ricoh Co Ltd | Surface emitting laser element and atomic oscillator |
| CN102322949A (en) * | 2011-07-28 | 2012-01-18 | 中国科学院西安光学精密机械研究所 | Ultrahigh-time resolution solid full-light detector |
| JP6303255B2 (en) | 2011-12-02 | 2018-04-04 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
| JP6102525B2 (en) * | 2012-07-23 | 2017-03-29 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
| JP2015008271A (en) | 2013-05-31 | 2015-01-15 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
| JP2015177000A (en) | 2014-03-14 | 2015-10-05 | 株式会社リコー | Surface emission laser, surface emission laser element and atomic oscillator |
| JP6557974B2 (en) * | 2015-01-08 | 2019-08-14 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, optical scanning device, image forming apparatus |
| JP6620453B2 (en) | 2015-08-06 | 2019-12-18 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
| CN105633797A (en) * | 2016-03-22 | 2016-06-01 | 中山德华芯片技术有限公司 | High-power quantum well epitaxial wafer structure of semiconductor laser |
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