CN101370903A - 片式荧光体、其制备方法以及使用这些荧光体的发光器件 - Google Patents

片式荧光体、其制备方法以及使用这些荧光体的发光器件 Download PDF

Info

Publication number
CN101370903A
CN101370903A CNA2007800025312A CN200780002531A CN101370903A CN 101370903 A CN101370903 A CN 101370903A CN A2007800025312 A CNA2007800025312 A CN A2007800025312A CN 200780002531 A CN200780002531 A CN 200780002531A CN 101370903 A CN101370903 A CN 101370903A
Authority
CN
China
Prior art keywords
sheet type
light
fluor
type phosphors
phosphors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800025312A
Other languages
English (en)
Inventor
全成德
金钟守
崔贵敦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LUCIMEA Co Ltd
Original Assignee
LUCIMEA Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LUCIMEA Co Ltd filed Critical LUCIMEA Co Ltd
Publication of CN101370903A publication Critical patent/CN101370903A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C04B35/20—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in magnesium oxide, e.g. forsterite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C04B35/22—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in calcium oxide, e.g. wollastonite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/6265—Thermal treatment of powders or mixtures thereof other than sintering involving reduction or oxidation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3213—Strontium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
    • C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
    • C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
    • C04B2235/3445—Magnesium silicates, e.g. forsterite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
    • C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
    • C04B2235/3454—Calcium silicates, e.g. wollastonite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6582—Hydrogen containing atmosphere
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/94—Products characterised by their shape
    • C04B2235/945—Products containing grooves, cuts, recesses or protusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

Abstract

本发明涉及一种用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体，其中所述荧光体通过成型和烧结一单独的荧光体或者荧光体与一片状的透光陶瓷材料的混合物获得，还涉及一种所述荧光体的制备方法以及使用所述荧光体的发光器件。通过结合本发明的片式荧光体至用于发出从近紫外到蓝色光的发光器件芯片制造的用于波长转换的发光器件，与使用荧光粉的常规发光器件相比，导致缺陷率和制造成本的显著减少并提供优异的耐久性和色泽复现性。此外，所述片式荧光体可被应用于LCD背光、家用照明等的光源。

Description

片式荧光体、其制备方法以及使用这些荧光体的发光器件
技术领域
本发明涉及一种片式荧光体，其用于吸收蓝光/近紫外光并发出可见光的光源，其特征在于所述片式荧光体通过成型和烧结单独的荧光体或者荧光体与一片状透光陶瓷材料的混合物获得；还涉及所述荧光体的制备方法以及使用所述荧光体的发光器件。
背景技术
在常规的白色发光器件中，已使用的产生白颜色的方法为：通过使黄色的钇铝石榴石(YAG)基荧光体通过具有高亮度的蓝色LED发出的足够高能量的光激发以发出黄颜色范围的光，使蓝颜色的LED与黄颜色的荧光体组合。图1表示常规白色发光器件的结构，其使用蓝色LED和粉末状黄色发光钇铝石榴石基荧光体。然而，由于从LED芯片发出的蓝光与从荧光体发出的黄光的结合对于图1中所示的所述荧光体的涂覆方式以及所述LED的工作条件非常敏感，因此以常规的钇铝石榴石基白色发光器件很难复制相同的白颜色。具体而言，如图1所示的常规的钇铝石榴石基白色发光器件具有诸如以下的问题：不规则的亮度、器件的高缺陷率、由于用于涂覆荧光体的环氧树脂和有机硅树脂的混合比率导致的色泽复现性的劣化、这些树脂的热不稳定性以及在硫化过程中荧光体的不规则的积聚。
因此，需要开发一种具有新结构的荧光体以及一种新封装方法以获得利用荧光体和GaN基蓝色LED发出稳定白光的发光器件。
发明内容
本发明的一个目的是提供一种发光器件，其相比使用荧光粉的常规发光器件，减少了缺陷率和制造成本并获得优异的热耐久性和色泽复现性，因此被应用于LCD背光、家用照明等光源，以及发光器件的制备方法。
本发明的另一个目的提供一种新的发光器件，其中一片式荧光体被结合至一蓝色/近紫外LED。
为了实现所述目的，本发明提供一种用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体，其中所述荧光体通过成型和烧结一单独的荧光体或者荧光体与一片状的透光陶瓷材料的混合物获得。
另外，所述片式荧光体可以包含形成于所述片式荧光体的至少任何一表面上的凹槽。
此外，所述凹槽可以在一方向相互平行或者在两方向相交成直角以具有网格形状。
更进一步，所述的透光陶瓷材料可以选自以下群组中的至少一种：MgO、CaO、SrO、BaO、SiO2、GeO2、SiN、SiAlON、Si3N4，、Al2O3、Ga2O3、Y2O3、TiO2、ZrO2、CeO2、Sm2O3、BaTiO3、BaTa2O6、Ta2O3、Sr(Zr，Ti)O3、PbTiO3、WO3、V2O3以及In2O3-SnO2，其以所述片式荧光体总重量的0-60％范围的重量被混合。
本发明的另一方面是提供一种用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体的制备方法，包括以下步骤：i)混合并研磨用于荧光体的原材料；ii)在还原气氛下在1100至1600℃焙烧所述磨碎的混合物以合成荧光粉；iii)再次研磨所述初步焙烧的混合物；iv)把所述重复研磨的荧光粉注入一模子中，通过施加压力至所述模子，使所述荧光粉成型为片状；及v)在还原气氛下在1100至1600℃烧结所述成型的荧光体。
另外，所述荧光体可以是选自以下群组的至少一种：(Ba，Sr，Ca)2SiO4:Eu2+，YAG((Y，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，TAG((Tb，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，(Ba，Sr，Ca)3SiO5:Eu2+，(Ba，Sr，Ca)MgSi2O6:Eu2+，Mn2+，(Ba，Sr，Ca)3MgSi2O8:Eu2+，Mn2+及(Ba，Sr，Ca)MgSiO4:Eu2+，Mn2+。
此外，所述制备方法可以进一步包括以下步骤：在所述成型步骤iv之前添加透光陶瓷材料至所述荧光体，所述透光陶瓷材料可以是选自以下群组中的至少一种：MgO，CaO，SrO，BaO，SiO2，GeO2，SiN，SiAlON，Si3N4，Al2O3，Ga2O3，Y2O3，TiO2，ZrO2，CeO2，Sm2O3，BaTiO3，BaTa2O6，Ta2O3，Sr(Zr，Ti)O3，PbTiO3，WO3，V2O3和In2O3-SnO2，所述透光陶瓷材料的添加量范围为所述片状荧光体总重量的0-60％。
更进一步，所述制备方法可以进一步包括以下步骤：在成型步骤iv)或烧结步骤v)之后，在所述片状荧光体的至少一表面形成若干凹槽。
还进一步，所述若干凹槽可以在一方向相互平行，或者在两方向相交成直角以具有网格形状。
为了实现本发明的其它目的，本发明提供一种通过把所述片式荧光体结合至一蓝色/近紫外LED制造的发光器件。
下文将更详细地说明本发明。
本发明的用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体，其特征在于所述荧光体通过成型和烧结一单独的荧光体或者荧光体与一片状的透光陶瓷材料的混合物获得。如上所述，常规发光器件的波长转换类型具有低的热和光稳定性，因为常规发光器件是通过把在蓝色/近紫外区域的光的发光二极管封装在混有荧光粉的环氧树脂中制成。相反，本发明的片式荧光体具有优异的热和光稳定性，并使发出高亮度的光成为可能。此类荧光体不特别限定，可以使用用于波长转换的所有已知荧光体。此类荧光体包括选自以下群组中的一个或多个荧光体：(Ba，Sr，Ca)2SiO4:Eu2+，YAG((Y，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，TAG((Tb，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，(Ba，Sr，Ca)3SiO5:Eu2+，(Ba，Sr，Ca)MgSi2O6:Eu2+，Mn2+，(Ba，Sr，Ca)3MgSi2O8:Eu2+，Mn2+ and(Ba，Sr，Ca)MgSiO4:Eu2+，Mn2+。在本发明的实施例中，使用Sr2SiO4:Eu2+或CaMgSi2O6:Eu2+，Mn2+的荧光体。
当所述的片式荧光体被用于转换波长时，本发明的所述片式荧光体可与一发光二极管结合。图2表示一白色发光器件的结构示意图，利用本发明所述的陶瓷片式荧光体。如图2所示，通过提供一位于一预定外壳内的发光二极管并把本发明的片式荧光体布置在所述发光二极管上形成一发光二极管。因此，当所述发光二极管发出的一部分光在穿过所述片式荧光体之后被发出时，其它被吸收进所述片式荧光体以发出与所述荧光体的特征相应的光。在所述发光二极管与所述片式荧光体之间形成一空穴，根据不同用途所述空穴内可以填充其它材料。
所述荧光体片可以通过成型和烧结一单独的荧光体或者荧光体与一透光陶瓷材料的混合物获得。所述片式荧光体可以通过成型和烧结一单独的荧光体制得，因为荧光体也是一种陶瓷，及通过成型和烧结所述荧光体与其它陶瓷材料的混合物以保证热稳定性或控制亮度。所述透光陶瓷材料是特别限定的，其可以是任何一种不与具有发光二极管或荧光体产生的波长区域的光反应，但是可以透过波长范围内的可见光的陶瓷材料。然而，所述透光陶瓷材料优选是在可见光区域为透明的材料以符合本发明的目的，所述透光陶瓷材料的优选的例子是选自以下群组中的至少一种：MgO，CaO，SrO，BaO，SiO2，GeO2，SiN，SiAlON，Si3N4，Al2O3，Ga2O3，Y2O3，TiO2，ZrO2，CeO2，Sm2O3，BaTiO3，BaTa2O6，Ta2O3，Sr(Zr，Ti)O3，PbTiO3，WO3，V2O3及In2O3-SnO2。而且，优选地，所述透光陶瓷材料添加至所述荧光体的范围是所述片式荧光体总重量的0-60％。
另外，优选地，在所述片式荧光体的至少一表面形成若干凹槽。所述凹槽用来增加片式荧光体的表面面积，以改善所述片式荧光体与发光二极管发出的光的反应性。所述凹槽可以使用能够处理陶瓷表面的已知工具形成，例如金刚石砂轮、激光器，所述凹槽的数量或形状不特别限定。然而，在本发明的一实施例中，为了方便处理，优选地，所述的凹槽形成在所述片式荧光体的至少一表面上，且在一方向相互平行或在两方向相交成直角以具有网格形状。
所述片式荧光体可以通过以下步骤制备：i)混合并研磨用于荧光体的原材料，ii)在还原气氛下在1100至1600℃焙烧所述磨碎的混合物以合成荧光粉，iii)再次研磨所述初步焙烧的混合物，iv)把所述重复研磨的荧光粉注入一模子中，通过施加压力至所述模子，使所述荧光粉成型为片状，及v)在还原气氛下在1100至1600℃烧结所述成型的荧光体。尽管原材料的混合和研磨步骤、焙烧及再研磨步骤等与常规荧光体制备方法相似，前述的详细情况此处不更详细地说明。根据本发明的片式荧光体的制备方法，在进行混合和研磨步骤、焙烧和再研磨步骤之后，进行把荧光粉注入模子中，成型和烧结所述荧光粉的步骤，从而制得片状的荧光体。如上所述，本发明的片式荧光体可以与透光陶瓷材料成型和烧结在一起。在此情形下，在期望成分的透光陶瓷材料被混合之后，在成型步骤所述混合物被成型。
在进行了前述步骤之后，由于所述片式荧光体在形状上可以使用，或者在所述片式荧光体上进一步进行处理步骤。具体地，因为当片式荧光体被要求具有大约亚微米至微米级的厚度或尺寸时，在成型和烧结步骤中很难维持所述片式荧光体的厚度或尺寸，具有期望形状和尺寸的片式荧光体可以通过先获得具有预定厚度和尺寸的片式或体型荧光体，然后进行切割和/或切片所述片式或体型荧光体的处理获得。在进行所述处理步骤之后，可以进行附加的烧结步骤以除去由于处理步骤造成的污染物。
所述片式荧光体的亮度可以通过其厚度和孔隙率或陶瓷材料的混合比率进行调整。如上所述，通过调整本发明的片式荧光体的几何形状或添加透光陶瓷材料至荧光粉，诸如亮度的发光特征可以被控制至一定程度，而且通过调整所述片式荧光体的厚度或孔隙率进一步控制。所述的孔隙率可以通过调整烧结时间或温度进行控制。因为前面的描述可以被本领域的技术人员理解，此处将省略其更多的详情。
此外，本发明的片式荧光体的制备方法可以另外包括以下步骤：在成型步骤iv)或烧结步骤v)之后，在所述片式荧光体的至少一表面形成若干凹槽。如上所述，当在所述片式荧光体的表面形成凹槽时，进一步改善了亮度。尽管所述形成凹槽的步骤可以在所述成型或烧结步骤之后或之前或之中、或附加的处理步骤之后进行，优选地，考虑到操作的便利性，所述凹槽形成步骤在所述成型或烧结步骤之后进行，因为在所述片式荧光体具有小尺寸情形下，在形成凹槽时进行操作存在一定程度不便利。
将通过前述的方法制备的片式荧光体结合在具有蓝色/近紫外光的发光特征的一发光二级管(LED)上，形成用于波长转换的发光器件。因为常规发光器件是通过利用环氧树脂封装所述的发光二极管制成，而本发明的发光器件是通过在所述发光二极管之上布置所述片式荧光体制成，以便它们相互间隔一预定距离，具有优异的热和光稳定性，并使发出高亮度的光成为可能。其中所述的结合方法不特别限定。也就是所述片式荧光体可以通过使用粘合剂、密封剂等等常规化学方法，或者使用常规机械装配结构被结合。
本发明有益效果：如上所述，本发明所述的片式荧光体，作为用于波长转换的荧光体，与用于发出从近紫外至蓝色光区域的发光器件芯片相结合。因此，可能改善常规发光器件中由于使用的荧光粉与环氧树脂或有机硅树脂的混合方法而恶化的热特征，以克服应用荧光体的可能高的缺陷率，并通过简化制造过程减少制造成本。此外，可提供能应用于LCD背光、家用照明等的光源的发光器件。
本发明的精神不必限制于上述的本发明的例子以及结合附图进行的说明。本发明的范围应当只由权利要求来限定。应当明白的是，本领域的技术人员可以修改和改变本发明的技术精神至各种形式。因此，当所述的修改和改变对本领域人员是显而易见时，此类修改和改变将被包含在本发明的实际范围内。
附图说明
图1是常规白色发光器件的结构示意图，其应用一蓝色LED和粉末型黄色发光YAG基荧光体；
图2是一白色发光器件的结构示意图，其应用本发明所述陶瓷片式荧光体；
图3表示本发明所述制造的具有30μm厚度的陶瓷片式蓝色基白色发光二极管的发射光谱；
图4表示本发明所述制造的具有50μm厚度陶瓷片式蓝色基白色发光二极管发射光谱；
图5表示本发明所述制造的具有100μm厚度的陶瓷片式蓝色基白色发光二极管的发射光谱；
图6表示通过结合陶瓷片与蓝色基发光二极管制成的白色发光器件的发射光谱，其在优选的实施例2-1中制备，并通过2小时烧结时间以具有8％孔隙率；
图7表示通过结合SiO2与蓝色基发光二极管制成的发光器件的发射光谱，SiO2混合至优选实施例4中制备的片式荧光体；
图8表示通过结合陶瓷片与蓝色基发光二极管制成的白色发光器件的发射光谱，其在优选的实施例2-2中制备，并通过8小时烧结时间以具有2％孔隙率；
图9表示通过结合本发明所述的片式荧光体与蓝色基发光二极管制成的发光器件的结构示意图，所述片式荧光体上形成有凹槽；
图10表示通过结合本发明所述的片式荧光体与蓝色基发光二极管制成的发光器件的发射光谱，所述片式荧光体上形成有凹槽；及
图11表示近紫外基白色发光二极管的发射光谱，本发明所述的白色发光陶瓷片式荧光体应用于所述的近紫外基白色发光二极管。
图中：1、YAG基荧光粉；2、环氧树脂；3、蓝色LED；4、片式荧光体；5、空穴或环氧树脂；6、具有形成的凹槽的片式荧光体；7、近紫外LED；8、白色平板式荧光体。
具体实施方式
下文将通过本发明的优选的实施例更加详细地说明本发明。然而，提供的下述的实施例只是为了有助于理解本发明，本发明并不只限于下述的实施例。
优选实施例1-1(片式荧光体和使用所述片式荧光体制造白色发光器件)
称取符合要求组成的碳酸锶(SrCO3)、二氧化硅(SiO2)和氧化铕(Eu2O3)，并将称取的材料放入容器内，混合所称取的材料并利用球磨研磨24小时。在具有氢气/氮气(H2/N2)比为5％的混合气体气氛的电炉中在1250℃下燃烧4小时，以合成Sr2SiO4:Eu2+荧光粉。其后，所述烧后的荧光粉再通过球磨研磨24小时。把大约30克再次研磨的烧过的荧光粉放入直径5cm、厚度5mm的盘式金属模子中之后，在以700kg/cm2的压力压缩所述再次研磨的烧过的荧光粉2小时，以成型为具有直径5cm、厚度5mm的盘式荧光体。所述模制的盘在具有氢气/氮气(H2/N2)比为5％的混合气体气氛的电炉中在1300℃下烧结4小时，以制造片式荧光体。
使用金刚石砂轮将上述制造的荧光体加工成宽度为5mm、长度为5mm、厚度为30μm。所述加工的片式荧光体在具有氢气/氮气(H2/N2)比为5％的混合气体气氛的电炉中在1250℃下燃烧1小时，以除去在切割过程中使用的润滑剂或水的残余物。上述制备的片式荧光体被结合至具有蓝色发光特征的GaN基发光二极管的上端，从而制成白色发光器件。
优选实施例1-2(片式荧光体和使用所述片式荧光体制造白色发光器件)
以与优选实施例1-1相同的方式制造片式荧光体和发光器件，不同之处在于所述片式荧光体厚度为50μm。
优选实施例1-3(片式荧光体和使用所述片式荧光体制造白色发光器件)
以与优选实施例1-1相同的方式制造片式荧光体和发光器件，不同之处在于所述片式荧光体厚度为100μm。
图3-5表示优选实施例1-1至1-3中制备的厚度为30、50和100μm的片式荧光体分别与具有蓝色发光特征的GaN基发光二极管的上端结合制造的白色发光器件的光谱。在所述的光谱中，在460nm的发射峰是蓝色发光GaN二极管的发射峰，在560nm的发射峰是由于所述片式荧光体的Eu2+的电子从f轨道向d轨道跃迁造成的发射峰。如图3-5所示，厚度为50μm的陶瓷片式荧光体表现出最佳的白颜色并显示(x＝0.3、y＝0.3)的纯白彩色坐标。另一方面，可以看出，在厚度为100μm的片式荧光体中，在460nm的蓝色发光GaN二极管的发射峰相对降低，因为当所述片式荧光体的厚度增加时，被所述片式荧光体吸收的蓝色发光GaN二极管的发光量增加。其间，可以看出，在厚度为30μm的片式荧光体中，在460nm的蓝色发光GaN二极管的发射峰相对升高，因为当所述片式荧光体的厚度减小时，被所述片式荧光体吸收的蓝色发光GaN二极管的发光量减少。
优选实施例2-1(根据片式荧光体的孔隙率的发光特征)
以与优选实施例1-2相同的方式制造片式荧光体和发光器件，不同之处在于所述成型的片式荧光体被烧结2小时。
优选实施例2-2(根据片式荧光体的孔隙率的发光特征)
以与优选实施例1-2相同的方式制造片式荧光体和发光器件，不同之处在于所述成型的片式荧光体被烧结8小时。
下表1表示根据烧结时间的片式荧光体的孔隙率的测量结果。
表1：
 
烧结时间(小时) 孔隙率
2 8％
4 5％
8 2％
从表1可以看出，如果烧结时间增加，则孔隙率减小。图6和7分别表示通过结合陶瓷片，其通过优选实施例2-1烧结时间为2小时制成并具有孔隙率为8％，至蓝色基发光二极管制成的白色发光器件的发射光谱，以及通过结合陶瓷片，其通过优选实施例2-2烧结时间为8小时制成并具有孔隙率为2％，至蓝色基发光二极管制成的白色发光器件的发射光谱。从所述的发射光谱可以看出，在通过2小时的烧结时间制备的所述陶瓷片式荧光体中蓝色发光GaN二极管在460nm的发射峰相对升高，而在通过8小时的烧结时间制备的所述陶瓷片式荧光体中蓝色发光GaN二极管在460nm的发射峰相对降低。这是因为当所述陶瓷片式荧光体的孔隙减少时，被所述片式荧光体吸收的蓝色发光GaN二极管的发光量增加。
优选实施例3(具有形成于其表面上的凹槽的片式荧光体及发光器件的制造)
利用金刚石砂轮或激光束在优选实施例1-2中制备的片式荧光体的一个表面形成若干凹槽，所述凹槽以0.5μm的间隙相互间隔开。通过把制备的具有形成的凹槽的片式荧光体结合至具有蓝色发光特征的GaN基发光二极管制造白色发光器件。图9是通过结合本发明所述的片式荧光体至蓝色基发光二极管制成的发光器件的结构示意图，所述片式荧光体上形成有凹槽。图10表示通过结合本发明所述的片式荧光体至蓝色基发光二极管制成的发光器件的发射光谱，所述片式荧光体上形成有凹槽；如图10所示，可以看出，与优选实施例1-2的片式荧光体相比较，所述具有形成的凹槽的片式荧光体具有增加的亮度。可以认为这是因为所述凹槽增加了光接触面积，使更大量的GaN的蓝色光被所述陶瓷片式荧光体吸收。
优选实施例4(添加有陶瓷材料的片式荧光体的制备)
以与优选实施例1-2相同的方式制造片式荧光体和发光器件，不同之处在于，在所述的成型步骤中添加20wt％的SiO2粉末至所述荧光粉。图7表示通过结合优选实施例4中制备的片式荧光体至蓝色基发光二极管制成的发光器件的发射光谱，SiO2混合在优选实施例4中制备的片式荧光体。从图7可以看出，由于含有SiO2的片式荧光体中的透明SiO2，在可见光范围内陶瓷荧光体的发射密度减小。即，由于添加了SiO2，蓝色发光GaN二极管的发射峰相对增加，得到与图6相似的光谱。这认为所述荧光体的密度可以由SiO2含量变化来控制。
优选实施例5(由近紫外光激发的白色发光片式荧光体的制备)
以与优选实施例1-2相同的方式制备片式荧光体，不同之处在于，使用荧光粉、CaMgSi2O6:Eu2+，Mn2+其吸收近紫外光范围的光以发出白光。通过结合所制备的白色发光片式荧光体至发出近紫外光的InGaN基发光二极管制造白色发光器件。图11表示近紫外基白色发光二极管的发射光谱，本发明所述的白色发光陶瓷片式荧光体应用于所述的近紫外基白色发光二极管。从图11可以看出，近紫外光的光谱没有示出，表示由于Eu2+的在460nm的蓝色光发射峰、由于Mn2+的在580nm和680nm的发射峰，及具有彩色坐标x＝0.28和y＝0.38的白色光发射光谱。

Claims (10)

1.一种用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体，其特征在于：所述荧光体通过成型和烧结一单独的荧光体或者荧光体与一片状的透光陶瓷材料的混合物获得。
2.根据权利要求1所述的片式荧光体，其特征在于：包含形成于所述片式荧光体的至少任何一表面的若干凹槽。
3.根据权利要求2所述的片式荧光体，其特征在于：所述凹槽在一方向相互平行或者在两方向相交成直角以具有网格形状。
4.根据权利要求1所述的片式荧光体，其特征在于，所述的透光陶瓷材料是选自以下群组中的至少一种：MgO、CaO、SrO、BaO、SiO2、GeO2、SiN、SiAlON、Si3N4，、Al2O3、Ga2O3、Y2O3、TiO2、ZrO2、CeO2、Sm2O3、BaTiO3、BaTa2O6、Ta2O3、Sr(Zr，Ti)O3、PbTiO3、WO3、V2O3以及In2O3-SnO2，其以所述片式荧光体总重量的0-60％范围的重量被混合。
5.一种用于吸收蓝色/近紫外光并发出可见光的光源的片式荧光体的制备方法，包括以下步骤：
i)混合并研磨用于荧光体的原材料；
ii)在还原气氛下在1100至1600℃焙烧所述磨碎的混合物以合成荧光粉；
iii)再次研磨所述初步焙烧的混合物；
iv)把所述重复研磨的荧光粉注入一模子中，通过施加压力至所述模子，使所述荧光粉成型为片状；及
v)在还原气氛下在1100至1600℃烧结所述成型的荧光体。
6.根据权利要求5所述的制备方法，其特征在于，所述荧光体是选自以下群组中的至少一种：(Ba，Sr，Ca)2SiO4:Eu2+，YAG((Y，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，TAG((Tb，Gd)3(Al，Ga)5O12:Ce3+)基荧光体，(Ba，Sr，Ca)3SiO5:Eu2+，(Ba，Sr，Ca)MgSi2O6:Eu2+，Mn2+，(Ba，Sr，Ca)3MgSi2O8:Eu2+，Mn2+及(Ba，Sr，Ca)MgSiO4:Eu2+，Mn2+。
7.根据权利要求5或6所述的制备方法，其特征在于，进一步包括以下步骤：在所述成型步骤iv之前添加透光陶瓷材料至所述荧光体，所述透光陶瓷材料是选自以下群组中的至少一种：MgO，CaO，SrO，BaO，SiO2，GeO2，SiN，SiAlON，Si3N4，Al2O3，Ga2O3，Y2O3，TiO2，ZrO2，CeO2，Sm2O3，BaTiO3，BaTa2O6，Ta2O3，Sr(Zr，Ti)O3，PbTiO3，WO3，V2O3和In2O3-SnO2，所述透光陶瓷材料的添加量范围为所述片式荧光体的总重量的0-60％。
8.根据权利要求5所述的制备方法，其特征在于，进一步包括以下步骤：在成型步骤iv)或烧结步骤v)之后，在所述片状荧光体的至少一表面形成若干凹槽。
9.根据权利要求8所述的制备方法，其特征在于，所述凹槽可以在一方向相互平行，或者在两方向相交成直角以具有网格形状。
10.一种发光器件，通过把权利要求1-4任一项所述的片式荧光体与一蓝色/近紫外LED结合制成。
CNA2007800025312A 2006-01-17 2007-01-16 片式荧光体、其制备方法以及使用这些荧光体的发光器件 Pending CN101370903A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060004760A KR100764148B1 (ko) 2006-01-17 2006-01-17 시트상 형광체와 그 제조방법 및 이를 이용한 발광장치
KR1020060004760 2006-01-17

Publications (1)

Publication Number Publication Date
CN101370903A true CN101370903A (zh) 2009-02-18

Family

ID=38287820

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800025312A Pending CN101370903A (zh) 2006-01-17 2007-01-16 片式荧光体、其制备方法以及使用这些荧光体的发光器件

Country Status (6)

Country Link
US (1) US20090002810A1 (zh)
EP (1) EP1979434A1 (zh)
JP (1) JP2009524235A (zh)
KR (1) KR100764148B1 (zh)
CN (1) CN101370903A (zh)
WO (1) WO2007083907A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102252273A (zh) * 2011-04-12 2011-11-23 广东佛照新光源科技有限公司 一种波长转换器件及其制备方法
CN102881808A (zh) * 2011-07-12 2013-01-16 信源陶磁股份有限公司 蓝宝石荧光板及其制造方法
CN102881809A (zh) * 2011-07-12 2013-01-16 信源陶磁股份有限公司 荧光层及其制造方法与用途
CN104067164A (zh) * 2011-11-23 2014-09-24 Lg伊诺特有限公司 显示器
CN106350067A (zh) * 2016-08-08 2017-01-25 雷春生 一种低色温高显色白光led用荧光粉的制备方法
CN114436650A (zh) * 2022-02-23 2022-05-06 山东国瓷功能材料股份有限公司 氧化锆组合物、氧化锆烧结体、牙科修复体及制备方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038304A (ja) * 2007-08-03 2009-02-19 Stanley Electric Co Ltd 照明用灯具
CN102428583B (zh) 2009-05-19 2015-06-03 皇家飞利浦电子股份有限公司 用于led的光散射和转换板
US8384114B2 (en) 2009-06-27 2013-02-26 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
KR100986336B1 (ko) 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
JP5340191B2 (ja) * 2010-02-02 2013-11-13 日東電工株式会社 光半導体装置
JP5749327B2 (ja) 2010-03-19 2015-07-15 日東電工株式会社 発光装置用ガーネット系蛍光体セラミックシート
EP2589082B1 (en) 2010-06-29 2018-08-08 Cooledge Lighting Inc. Electronic devices with yielding substrates
EP2678404B1 (en) 2011-02-24 2017-10-18 Nitto Denko Corporation Light emitting composite with phosphor components
WO2013118200A1 (ja) * 2012-02-08 2013-08-15 パナソニック株式会社 発光装置
CN104220398B (zh) * 2012-03-29 2017-07-28 默克专利有限公司 包含转化磷光体和具有负的热膨胀系数的材料的复合陶瓷
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
KR102098589B1 (ko) 2013-07-04 2020-04-09 삼성전자주식회사 파장변환부재 및 그 제조방법과, 이를 구비한 반도체 발광장치
KR20170112381A (ko) * 2016-03-31 2017-10-12 삼성전기주식회사 세라믹 조성물 및 이를 포함하는 적층형 커패시터
WO2018023125A1 (en) * 2016-07-29 2018-02-01 The Regents Of The University Of California Ce:YAG/Al2O3 COMPOSITES FOR LASER-EXCITED SOLID-STATE WHITE LIGHTING
JP7178074B2 (ja) * 2018-03-20 2022-11-25 国立研究開発法人物質・材料研究機構 波長変換部材及び波長変換素子、並びに波長変換部材の製造方法
KR102121249B1 (ko) * 2018-07-04 2020-06-10 한국광기술원 형광체 플레이트 및 그의 제조방법
KR102249134B1 (ko) * 2019-09-11 2021-05-07 한국광기술원 옐로우 링 현상이 저감된 형광체 플레이트 및 그의 제조방법
WO2021248445A1 (zh) * 2020-06-12 2021-12-16 苏州君诺新材科技有限公司 一种透明复相荧光陶瓷及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
KR100315226B1 (ko) * 1999-07-16 2001-11-26 김순택 고휘도 저전압용 청색 형광체
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
DE10129785B4 (de) * 2001-06-20 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP4122791B2 (ja) * 2002-02-14 2008-07-23 松下電工株式会社 発光装置
US6809471B2 (en) * 2002-06-28 2004-10-26 General Electric Company Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same
WO2004081140A1 (ja) * 2003-03-13 2004-09-23 Nichia Corporation 発光膜、発光装置、発光膜の製造方法および発光装置の製造方法
KR100610249B1 (ko) * 2003-12-23 2006-08-09 럭스피아 주식회사 황색 발광 형광체 및 그것을 채용한 백색 반도체 발광장치
JP3897806B2 (ja) * 2004-01-07 2007-03-28 松下電器産業株式会社 Ｌｅｄ照明光源
JP4020092B2 (ja) * 2004-03-16 2007-12-12 住友電気工業株式会社 半導体発光装置
JP4805831B2 (ja) * 2004-03-18 2011-11-02 パナソニック株式会社 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置
KR100777501B1 (ko) * 2004-04-27 2007-11-28 마쯔시다덴기산교 가부시키가이샤 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치
JP2005340240A (ja) * 2004-05-24 2005-12-08 Cimeo Precision Co Ltd 透光色変換部材及びその製造方法
US7633217B2 (en) * 2004-06-24 2009-12-15 Ube Industries, Ltd. White-light light emitting diode device
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
KR100735148B1 (ko) * 2004-11-22 2007-07-03 (주)케이디티 백라이트 장치용 광 여기 확산시트, 이를 이용한액정표시용 백라이트 장치
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
TWI255566B (en) * 2005-03-04 2006-05-21 Jemitek Electronics Corp Led
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102252273A (zh) * 2011-04-12 2011-11-23 广东佛照新光源科技有限公司 一种波长转换器件及其制备方法
CN102881808A (zh) * 2011-07-12 2013-01-16 信源陶磁股份有限公司 蓝宝石荧光板及其制造方法
CN102881809A (zh) * 2011-07-12 2013-01-16 信源陶磁股份有限公司 荧光层及其制造方法与用途
CN104067164A (zh) * 2011-11-23 2014-09-24 Lg伊诺特有限公司 显示器
US9198258B2 (en) 2011-11-23 2015-11-24 Lg Innotek Co., Ltd. Display device
US9529138B2 (en) 2011-11-23 2016-12-27 Lg Innotek Co., Ltd. Display device
CN104067164B (zh) * 2011-11-23 2017-06-27 Lg伊诺特有限公司 显示器
CN106350067A (zh) * 2016-08-08 2017-01-25 雷春生 一种低色温高显色白光led用荧光粉的制备方法
CN114436650A (zh) * 2022-02-23 2022-05-06 山东国瓷功能材料股份有限公司 氧化锆组合物、氧化锆烧结体、牙科修复体及制备方法
CN114436650B (zh) * 2022-02-23 2023-03-17 山东国瓷功能材料股份有限公司 氧化锆组合物、氧化锆烧结体、牙科修复体及制备方法

Also Published As

Publication number Publication date
JP2009524235A (ja) 2009-06-25
KR20070075952A (ko) 2007-07-24
EP1979434A1 (en) 2008-10-15
WO2007083907A1 (en) 2007-07-26
US20090002810A1 (en) 2009-01-01
KR100764148B1 (ko) 2007-10-05

Similar Documents

Publication Publication Date Title
CN101370903A (zh) 片式荧光体、其制备方法以及使用这些荧光体的发光器件
CN100592537C (zh) 发光材料,可特别用于led用途
KR101142725B1 (ko) 발광막, 발광장치, 발광막의 제조방법 및 발광장치의제조방법
JP4374913B2 (ja) 発光装置
KR101507250B1 (ko) 옥시나이트라이드 발광재료, 그 제조방법 및 이로부터 제조된 조명광원
CN101605866B (zh) 包含复合物单片陶瓷发光转换器的照明系统
KR101178054B1 (ko) β-사이알론 형광체 제조방법
US20080191609A1 (en) Illumination System Comprising a Red-Emitting Ceramic Luminescence Converter
CN101899301B (zh) Led发光材料、led发光装置及制作方法
CN101536199A (zh) 包括单片陶瓷发光转换器的照明系统
CN103881706B (zh) 一种氮氧化物荧光粉、其制备方法及含该荧光粉的发光装置
CN101220273A (zh) 发光体以及使用其的光学设备
CN101195744A (zh) 含氮化合物荧光材料及其制造方法和使用其的发光装置
CN101124293A (zh) 包含辐射源和发光材料的照明系统
KR102215665B1 (ko) 형광분말, 이의 제조방법 및 이를 구비하는 발광소자
CN102531564A (zh) 用于白光led封装的红黄光复合透明陶瓷及其制备方法
CN106479500A (zh) 一种发光玻璃陶瓷及其制法与在led照明器件中的应用
CN102249660B (zh) GaInN白光LED用复合结构荧光陶瓷及其制备方法
KR102108210B1 (ko) 희토류 이온 함유 유리-형광체 복합체 및 이를 포함하는 발광다이오드
CN102544326B (zh) 带有Ce3+ /Ce3+,Li+掺杂发光材料的荧光物质
CN110316963A (zh) 一种荧光玻璃陶瓷材料以及含该材料的发光装置
EP2448020A1 (en) Light emitting module
CN102881809A (zh) 荧光层及其制造方法与用途
CN109897636A (zh) 荧光体以及发光装置
CN1667082A (zh) 紫外光固体光源的无机粉

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090218