CN101405860B - 用于细铝线的铝凸块接合 - Google Patents

用于细铝线的铝凸块接合 Download PDF

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CN101405860B
CN101405860B CN2007800094755A CN200780009475A CN101405860B CN 101405860 B CN101405860 B CN 101405860B CN 2007800094755 A CN2007800094755 A CN 2007800094755A CN 200780009475 A CN200780009475 A CN 200780009475A CN 101405860 B CN101405860 B CN 101405860B
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projection
wire
lead
aluminium
line
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CN101405860A (zh
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朱正宇
方幸泉
任炜星
权溶锡
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Fairchild Semiconductor Corp
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Fairchild Semiconductor Corp
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Abstract

本发明包括一种经封装半导体装置，其中使用铝凸块接合将接合线接合到引线。所述半导体装置安装在具有带镍镀层的引线的引线框上。为了在细铝线(例如直径为2密耳的线)与所述引线之间形成所述凸块接合，将铝凸块接合到所述镍镀层且将所述线接合到所述凸块。所述凸块是掺杂有镍的铝，且由大直径线(例如直径为6密耳的线)形成。

Description

用于细铝线的铝凸块接合
技术领域
本发明涉及将铝线接合施加到表面，例如引线框或半导体装置上的触点。
背景技术
常规上，在半导体封装中将半导体电路小片的特征连接到引线框的引线的铝接合线被直接接合到引线框。当使用这种方法时与细铝接合线(直径小于约3密耳)相关联的常见问题包括跟部断裂和接合升离。当接合参数设置过高且接合线在接合处断裂时发生跟部升离，从而可能会导致丧失半导体特征与引线之间的电通信。通常当接合参数设置过低且接合脱离引线时发生接合升离。因此，存在将产生弹性接合的较窄范围的接合参数。另外，用于将细铝线直接接合到引线框的接合参数对铝线的材料成分和引线框的表面情况非常敏感。
用于将金线接合到引线框的凸块上接合缝合方法使用所述引线框上的金凸块作为接合线与引线框之间的接口。这放宽了用于金接合线的接合参数范围。其它方法可以类似方式使用焊料凸块。然而，这些方法均不适用于接合铝线。
存在许多针对于在半导体封装中进行线接合的美国专利，包括在2002年7月2日颁发给奥卡(Oka)等人的第6,413,797号美国专利。奥卡教示一种具有电极的半导体装置，所述电极具有在镀金过程中设置在其上的金凸块。所述金凸块有助于将金线接合到所述电极。奥卡并未教示一种提供用于将细铝线接合到表面的铝凸块的廉价且简单的方法。
因此，需要一种接合细铝线的方法，其具有宽松的接合参数，在减少跟部断裂和接合升离情形中展示改进的可靠性，且较廉价。
发明内容
在本发明的一种形式中，本发明包含一种经封装半导体装置，其中使用铝凸块接合将接合线接合到引线。所述半导体装置安装在具有带镍镀层的引线的引线框上。为了在细铝线(例如直径为2密耳的线)与引线之间形成凸块接合，将铝凸块接合到镍镀层且将所述线接合到所述凸块。所述凸块是掺杂有镍的铝，且由大直径线(例如直径为6密耳的线)形成。
在另一形式中，本发明包含一种用于封装半导体装置的方法。所述方法包含以下步骤：提供附接有半导体装置的引线框，其中所述引线框具有多个引线；在所述引线中的一者或一者以上的表面上构建凸块；以及将铝接合线线接合到所述凸块中的每一者。所述接合线具有细直径(例如直径为约2密耳)，且所述凸块具有大直径(例如直径为约6密耳)。所述凸块包含铝，且其可掺杂有镍。所述引线可具有镍镀层。所述方法还可包含将引线框、半导体装置和接合线囊封在非导电囊封聚合物中的进一步步骤。
本发明的优点在于，通过大直径凸块实现铝到镍的接合，且细铝线能够接合到铝表面。尽管细线铝到镍的接合已展示为不可靠的且对表面情况和接合参数特别敏感，但大直径线铝到镍的接合已展示为稳固的且对表面情况和接合参数较不敏感。另外，本发明展示接合升离和跟部断裂情况显著减少。
附图说明
参看附图揭示本发明，其中：
图1是根据本发明的使用铝凸块接合的半导体封装的横截面图；
图2是根据图1的线到引线的铝凸块接合的侧视图；
图3A是用于形成根据图2的铝凸块的楔形工具的尖端的正面图；
图3B是图3A的楔形工具尖端的横截面图；以及
图4是本发明的铝凸块接合过程的流程图。
在所述若干视图中，相应参考符号始终指示相应部分。本文所陈述的实例说明本发明的一个实施例，但其不应被解释为以任何方式限制本发明的范围。
具体实施方式
参看图1，其中展示本发明的具有铝凸块接合的半导体封装。所述封装10包括半导体装置12、引线框14、若干铝接合线16和若干凸块接合18。
引线框14包括若干引线20和用于支撑半导体装置12的电路小片垫22。所述半导体装置包括若干电极，以用于通过接合线16连接到引线20。在特定实施例中，接合线16具有约2密耳(50μm)的直径以及约99％的铝和约1％的硅的成分。然而，在不同实施例中，线16可具有替代性特征。出于此描述的目的，细线是直径为3密耳或更小的线，且大直径线具有大于3密耳的直径。
图2详细展示凸块接合18，其将线16接合到引线20。引线20通常是表面上具有镍镀层24的铜。凸块接合18包括铝凸块26，所述铝凸块26包含大直径铝线(例如直径为约6密耳(150μm))的一部分。在特定实施例中，凸块26包含掺杂有镍的铝。所述凸块26以类似于6密耳线的引线框接合的方式接合到镍镀层24，不同之处只是所述楔形工具具有平坦的表面，而不是通常使用的三角楔形。平头楔形工具28(图3A和3B所示)给接合凸块26提供平坦表面以用于与线16接合。由于凸块26不会像线那样具有跟部，所以楔形工具28不会像常规楔形工具那样在楔形表面上具有向上曲线来容纳跟部。
参看图4，本发明的过程包含以下步骤：晶片切割30、电路小片附接32、凸块构建34、线接合36、囊封38和典型的后端修整和测试40。晶片切割步骤30和电路小片附接步骤32特定用于半导体装置和引线框。凸块构建步骤34包含使用平头楔形工具28将6密耳铝线的末端接合到引线20上的镍镀层24。接着，使所述6密耳线从末端断离开以留下凸块26。在特定实施例中，注意使凸块26的长度与将附接到其的线16的方向对直。另外，凸块26的大小应至少像半导体芯片上的栅极垫开口那样大。在线接合步骤36中，使用典型的线接合技术将铝线16的末端接合到铝凸块26。在囊封步骤38中，将非导电囊封聚合物42(图1)包覆模制在所述封装上。接着，在步骤40中进行典型的修整和测试。
因此，铝到镍的接合位于镍镀层24与凸块26(其为一段6密耳铝线)之间。与细铝线与镍镀层之间的直接接合相比，所述接合已展示为可靠得多的工艺，其具有放宽的接合参数。另外，将细铝线16以铝到铝接合的方式接合到凸块26，所述铝到铝接合固有地比细线的铝到镍接合更可靠。还已经展示，即使具有低接合参数规格限制，凸块接合18在接合剪力测试和接合拉力测试中也具有优于细线铝到镍接合的改进结果。另外，线16的接合厚度得到改进，从而产生更好的抗跟部断裂性。
在替代性实施例中，可使用其它线和接合尺寸。举例来说，用于5密耳线的线接合可使用20密耳凸块。
尽管已参考优选实施例来描述本发明，但所属领域的技术人员将了解，在不脱离本发明范围的情况下可作出各种改变且可用等效物替代其元件以适应特定情形。因此，希望本发明不限于作为预期用于实行本发明的最佳模式来揭示的特定实施例，而是本发明将包括处于所附权利要求书的范围和精神内的所有实施例。

Claims (9)

1.一种封装半导体装置的方法，其包含以下步骤：
提供附接有半导体装置的引线框，所述引线框具有多个引线；
在所述引线中的一者或一者以上的表面上构建第一凸块；
在所述第一凸块上由平头楔形工具形成平坦表面；以及
将铝接合线的第一末端线接合到所述第一凸块上的所述平坦表面。
2.根据权利要求1所述的方法，所述接合线具有细直径。
3.根据权利要求2所述的方法，所述接合线具有2密耳的直径。
4.根据权利要求1所述的方法，所述第一凸块构建步骤包含：将大直径铝线的一部分接合到所述引线中的一者或一者以上；以及使所述大直径线断离开所述部分以留下凸块。
5.根据权利要求4所述的方法，其中所述平头楔形工具在所述大直径铝线的所述接合部分形成平坦表面。
6.根据权利要求4所述的方法，所述第一凸块具有6密耳的直径。
7.根据权利要求1所述的方法，所述第一凸块包含铝。
8.根据权利要求7所述的方法，所述引线具有镍镀层，且所述第一凸块掺杂有镍。
9.根据权利要求1所述的方法，其进一步包含将所述引线框、半导体装置和接合线囊封在非导电囊封聚合物中的步骤。
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US20070216026A1 (en) 2007-09-20
JP2009530872A (ja) 2009-08-27
WO2007109652A3 (en) 2008-01-17
US20100035385A1 (en) 2010-02-11
WO2007109652A2 (en) 2007-09-27
US8138081B2 (en) 2012-03-20
DE112007000671T8 (de) 2009-05-14
KR20080103072A (ko) 2008-11-26
DE112007000671T5 (de) 2009-01-29
TW200742017A (en) 2007-11-01
KR101355987B1 (ko) 2014-01-28
CN101405860A (zh) 2009-04-08

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