CN101431045B - Method for controlling relative aperture deviation ratio of openings with different aperture - Google Patents
Method for controlling relative aperture deviation ratio of openings with different aperture Download PDFInfo
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- CN101431045B CN101431045B CN2007101666838A CN200710166683A CN101431045B CN 101431045 B CN101431045 B CN 101431045B CN 2007101666838 A CN2007101666838 A CN 2007101666838A CN 200710166683 A CN200710166683 A CN 200710166683A CN 101431045 B CN101431045 B CN 101431045B
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Abstract
A method for controlling relative aperture deviation ratio of different openings of apertures is as below: taking a patterned photoresistance layer as a mask to perform a first etching step so as to form a patterned silicon containing material layer, and generating polymeric membranes on the lateral walls of the patterned photoresistance layer and the patterned silicon containing material layer; then, taking the patterned photoresistance layer, the patterned silicon containing material layer and the polymeric membranes as masks to perform a second etching step so as to at least remove an exposed etching resisting layer and form patterns; next, taking the patterned etching resisting layer as a mask to remove part of a target material layer, forming a first opening and a second opening in the target material layer, and obtaining the predetermined relative aperture deviation ratio by adjusting the etching parameters of the first etching step and/or the second etching step.
Description
Technical field
The invention relates to the technology of etching aspect, and particularly relevant for a kind of method of controlling the relative aperture deviation ratio of aperture different openings.
Background technology
Along with the integrated level requirement of integrated circuit is more and more high, the size of circuit pattern is also more and more little.In integrated circuit technology, the method for dwindling pattern dimension is utilized the photoetching process of high-res mostly.But the high-res photoetching process has optic restriction, so its technology is very difficult, cost is very expensive.Especially for the technology of patterns of openings, check after its only relevant development that critical size (ADI CD) is difficult to control especially with photoetching process.Therefore, generally meeting is checked critical size (AEI CD) after obtaining answering the desired etching of technology in the mode of adjusting etch recipe, and this is the actual aperture that is formed on the opening in the target material layer.
Yet, when forming the aperture of size different openings simultaneously in this way, still have a development of respective openings after-etching back aperture difference is difficult to the suitably problem of control.In this what is called " back-etching back aperture of developing is poor " being defined as: inspection critical size difference between the two after critical size and the etching is checked in the back of developing.For example, form at the same time in the technology of square contact hole (square contact) that contacts with source/drain electrode and the shared contact hole (share contact) that contacts with source/drain electrode with grid, as dwindle the aperture of square contact window, then the aperture of the bigger shared contact window in aperture can be reduced more.When the aperture of sharing contact window dwindles when too much, the shared contact hole of Xing Chenging promptly has too high resistance after a while, and service speed is greatly reduced; Even may not contact with the grid or the source/drain region of target, open circuit and cause.On the contrary, dwindle underswing, then can produce problems such as other elements of misconnection as aperture square, that share contact window.Therefore, the aperture of these two kinds of contact windows dwindles amplitude and all must do suitable control.
Similarly, in the opening process of other types, in the time of need forming the different multiple opening in aperture simultaneously, after the development of various openings-variation amplitude of etching back aperture difference also must do suitable control simultaneously, to meet the allowed scope of technology.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of method of controlling the relative aperture deviation ratio of aperture different openings is being provided.
The present invention proposes a kind of method of controlling the relative aperture deviation ratio of aperture different openings.The technology of aperture different openings is to keep out the trilamellar membrane structure of layer, material layer and photoresist layer prior to forming etching on the target material layer in regular turn, and with the photoresist layer patterning.Wherein, the patterning photoresist layer has the first different patterns of openings of aperture and second patterns of openings.Then, carry out the step that etching material layer, etching are kept out layer and target material layer in regular turn, in the target material layer of first, second patterns of openings of correspondence, to form first opening and second opening respectively.The aperture of first opening (promptly checking critical size after the etching of first opening) is first aperture difference with the difference in the aperture (promptly checking critical size after the development of first opening) of first patterns of openings, the aperture of this second opening (promptly checking critical size after the etching of second opening) is second aperture difference with the difference in the aperture (promptly checking critical size after the development of second opening) of this second patterns of openings, and the ratio between second aperture difference and first aperture difference is called the relative aperture deviation ratio.And the aperture of the first above-mentioned patterns of openings is greater than the aperture of the second above-mentioned patterns of openings.This method is characterised in that: with the patterning photoresist layer is mask, carry out first etching step, the design transfer of patterning photoresist layer to the material layer, is formed patterning material layer, and produce polymeric membrane in the sidewall of patterning photoresist layer and patterning material layer.Then, be mask with the polymeric membrane of patterning photoresist layer, patterning material layer and sidewall thereof, carry out second etching step, keep out layer to remove the etching that exposes at least, keep out layer and form pattern etched.Afterwards, keeping out layer with pattern etched is etching mask, removes the part target material layer, forms first, second opening in target material layer, and by the etching parameter of adjustment first etching step and/or the etching parameter of second etching step, with the relative aperture deviation ratio that obtains presetting.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the second above-mentioned etching step is for carrying out the over etching step, to keep out the enlarging patterns of openings that forms first opening in the layer in pattern etched.Feed fluorine-containing hydrocarbon compound in the second above-mentioned etching step as etching gas, and this fluorine-containing hydrocarbon compound is CHxFy, wherein x=1,2,3; Y=1,2,3.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the second above-mentioned etching step is for carrying out the just etching step, to keep out the vertical in fact patterns of openings of formation in the layer in pattern etched.In one embodiment, the etching gas of second etching step is CO, O
2And CF
4
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the second above-mentioned etching step for example is to carry out the undercut step earlier, removes the partially-etched layer of keeping out that exposes.Wherein, the etching gas of second etching step is CO, O
2And CF
4Then, carry out the 3rd etching step again, it is the over etching step, removes the part target material layer that layer and below thereof are kept out in residual etching.Above-mentioned over etching step is the anisotropic etching step, and the employed etching gas of over etching step is a fluoro-gas.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the etching parameter of above-mentioned adjustment first etching step for example is the flow of etching gas.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the etching parameter of above-mentioned adjustment second etching step for example is an etching period.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, the first above-mentioned opening is for sharing contact window, and second opening is square contact window.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, it for example is the I-line photoresistance that layer is kept out in above-mentioned etching.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, above-mentioned material layer is hard mask bottom anti-reflection layer.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, above-mentioned patterning photoresist layer is 193 nanometer photoresistances.
According to the method for the relative aperture deviation ratio of the described control of embodiments of the invention aperture different openings, wherein this target material layer comprises dielectric layer.
Method of the present invention is the etching parameter that the step of layer is kept out in step that utilize to adjust etching material layer and etching etching, to control relative aperture deviation ratio between the different openings of aperture in the scope that technology was allowed.Therefore, the present invention can make follow-up formed contact hole can not take place misconnection, too small with the element contact area or not with problems such as element contacts, and can promote the reliability of technology greatly.On the other hand, method of the present invention is to control the relative aperture deviation ratio by the mode of the etching parameter of adjusting etch process, and need not revise photomask, therefore can save the technology cost.
State with other purposes, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A to Fig. 1 H is the flow process profile according to the contact window technology that the embodiment of the invention illustrated, and this contact window technology includes relative aperture deviation ratio control method of the present invention.
The main element symbol description
100: substrate
101: isolation structure
102: metal oxide semiconductor transistor
104: grid structure
106: clearance wall
108: source/drain region
109: the contact hole etching suspension layer
110: dielectric layer
112: layer is kept out in etching
113: pattern etched is kept out layer
114: the material layer
115: patterning material layer
116: the patterning photoresist layer
120: share the contact window pattern
122: square contact window pattern
124,126,132,134: patterns of openings
128,130: etching step
136: share contact window
138: square contact window
Embodiment
Below, will be that example further specifies the present invention with contact window technology, but this example be not in order to limit scope of the present invention.Figure 1A to Fig. 1 H is the flow process profile according to the contact window technology that the embodiment of the invention illustrated, and this contact window technology includes relative aperture deviation ratio control method of the present invention.
Please refer to Figure 1A, substrate 100 at first is provided, for example be formed with a plurality of metal-oxide semiconductor (MOS)s (MOS) transistor 102 in the substrate 100, it is by the isolation structure 101 and other element separation of shallow slot isolation structure and so on.The grid structure 104 of transistor 102 is positioned in the substrate 100, and clearance wall 106 is positioned at grid structure 104 sidewalls, and source/drain region 108 is arranged in grid structure 104 substrate on two sides 100.In certain embodiments, more can on grid structure 104 and source/drain region 108, form metal silicide (not illustrating), as nickle silicide, tungsten silicide or cobalt silicide etc., to reduce resistance.Because the material and the formation method of each member are known by those skilled in the art in the transistor 102, so repeat no more.
Afterwards, please refer to Figure 1B, in substrate 100, form dielectric layer 110, with covering transistor 102 and isolation structure 101.This dielectric layer 110 for example is doped silicon glass, silicon dioxide, advanced low-k materials etc., or is made up of non-impurity-doped glass (USG) layer and phosphorosilicate glass (PSG) layer.The formation method of dielectric layer 110 for example is chemical vapour deposition technique or method of spin coating.In the present embodiment, dielectric layer 110 promptly is the target material layer that forms contact window as pre-.
In certain embodiments, more can before forming, dielectric layer 110 in substrate 100, form contact hole etching suspension layer (contact etching stopper layer, CESL) 109, its material can for example be a silicon nitride, and the formation method can for example be a chemical vapour deposition technique then.At this moment, above-mentioned target material layer promptly is meant dielectric layer 110 and contact hole etching suspension layer 109.
Then, on dielectric layer 110, form in order to etching mask as the step of subsequent etch contact window.At present, in 65nm or the advanced technologies below the 45nm, need the thickness of photoresistance is further reduced or thinning the not good problem of film thickness uniformity of being derived with the some optical confinement that reduces gold-tinted technology.But the filming of photoresistance can make that but elching resistant is relatively poor, therefore can use the rete of multilayer to replace known individual layer photoresistance as etching mask usually.
Please continue C, on dielectric layer 110, form an etching and keep out layer 112 with reference to Fig. 1.It for example is materials such as novolac type phenolic resins (novolac resin) or similar I-line photoresistance that layer 112 is kept out in etching, and its thickness is about 1500 dust to 3000 dusts, and preferable then is the 1800 Izod right sides.If keeping out layer with etching 112 is that the I-line photoresistance is an example, its generation type is to utilize general photoresistance coating program earlier, and is coated on the dielectric layer 110, and then baking-curing in addition, can form it.
Then, keep out formation one deck material layer 114 on the layer 112 in etching.Material layer 114 for example is hard mask bottom anti-reflective (Silicon-containing Hard-mask Bottom anti-reflectioncoating, SHB) layer, its composition is siliceous organic high molecular polymer (organosilicon polymer) or poly-silicon thing (polysilane), has a chromophoric group (chromophore group) and a crosslinked group (crosslinkable group) at least.In addition, can also contain crosslinking agent (crosslinking agent) in the composition of material layer 114, so that behind irradiation, can produce cross-linking reaction.And material layer 114 has can be by adjusting the characteristic that silicone content obtains different etch resistant abilities.Hold above-mentionedly, the silicone content that material layer 114 has is approximately between 5wt% to 30wt%, and is preferable then between between the 15wt% to 25wt%, and its thickness then between 150 dust to 1100 dusts, is preferably the 800 Izod right sides.
Then, please refer to Fig. 1 D, on material layer 114, form one deck patterning photoresist layer 116.Patterning photoresist layer 116 for example is ArF photoresistance or 193 nanometer photoresistances.The thickness of patterning photoresist layer 116 only needs between 600 dust to 2200 dusts, the preferable 1500 Izod right sides that are about.Wherein, patterning photoresist layer 116 has bigger shared contact hole (share contact) patterns of openings 120 and less square contact hole (square contact) patterns of openings 122.Share contact window pattern 120 and be positioned at the part of grid pole structure 104 of same metal oxide semiconductor transistor 102 and the top of part source/drain region 108,122 in square contact window pattern is positioned at 108 tops, part source/drain region of another metal oxide semiconductor transistor 102.Share/critical size (ADI CD) is checked after being the development of shared/square contact window in the aperture of square contact window pattern 120/122. herein
Subsequently, please refer to Fig. 1 E, utilize patterning photoresist layer 116, carry out an etching step 128 as etching mask, with share/square contact window pattern 120/122 is transferred in the material layer 114 of below via etching, to form patterning material layer 115.In above-mentioned etching step 128, utilize to feed fluorine-containing hydrocarbon compound (CHxFy, wherein x=1,2,3; Y=1,2,3.) as etching gas, fluoroform (CHF for example
3), a fluoromethane (CH
3F), difluoromethane (CH
2F
2) or its mist, in the time of can making etching material layer 114, also can produce the deposition of polymeric membrane simultaneously.Thus, can in patterning material layer 115, etch the patterns of openings 124/126 with convergent inclination (tapered) sidewall of corresponding respectively sharing/square contact window pattern 120/122.And, owing to share the aperture of the aperture of contact window pattern 120, so the polymeric membrane that the sidewall of patterns of openings 124 and shared contact window pattern 120 is piled up can be many than the polymeric membrane that the patterns of openings 126 and the sidewall of square contact window pattern 122 are piled up greater than square contact window pattern 122.That is be that the aperture difference of patterns of openings 124 and shared contact window pattern 120 is greater than the aperture difference of patterns of openings 126 with square contact window pattern 122.
Hold above-mentionedly, the aperture that etching step 128 used etch recipe can make patterns of openings 124/126 is less than sharing/aperture of square contact window pattern 120/122.Simultaneously, adjust the etching parameter of etching step 128 by appropriateness, for example etching is with the flow of gas, and may command shares/and the aperture of square contact window pattern 120/122 dwindles amplitude.
Next, can utilize the polymeric membrane of patterning photoresist layer 116, patterning material layer 115 and sidewall thereof to be mask, carry out an etching etching and keep out the step of layer 112, keep out layer 112 to remove the etching that is exposed by patterns of openings 124/126 at least, keep out layer and form a pattern etched.
Because etch-rate can be subjected to the different influence of pore size of patterns of openings, the relatively large patterns of openings in aperture can make etch-rate also very fast relatively.Shown in Fig. 1 F, keep out layer 112 when exposing dielectric layer 110 when the etching of etching openings pattern 124 bottoms, the etching that patterns of openings 126 bottoms are exposed is kept out 112 on layer and is not removed fully as yet.Certainly, patterning photoresist layer 116 also had part and was consumed (be not illustrated in graphic in) this moment.So, shown in Fig. 1 G, the step 130 that needs to keep out layer 112 by the etching etching is carried out an over etching (over-etching) step, making the etching of patterns of openings 126 bottoms keep out layer 112 is etched to and exposes dielectric layer 110, layer 112 is kept out in the etching of patterns of openings 124 bottoms then can produce the phenomenon of enlarging, keeping out the patterns of openings 132/134 that forms corresponding patterns of openings 124/126 in the layer 113 respectively at pattern etched, and also together with the time remove patterning photoresist layer 116.In addition, adjust the etching parameter of etching step 130, etching period for example, the pore size of may command patterns of openings 132/134 by appropriateness.
Continue it, please refer to Fig. 1 H, after patterns of openings 132/134 forms, then etching is kept out layer 113 when making etched pattern, remove patterning material layer 115 simultaneously with gases such as CF4/O2.Then, keeping out layer 113 with pattern etched is mask, carry out etching step, expose the part of grid pole structure 104 of a metal oxide semiconductor transistor 102 and the shared contact window 136 of part source/drain region 108 in dielectric layer 110 and contact hole etching suspension layer 109, to form, and the square contact window 138 that exposes the part source/drain region 108 of another metal oxide semiconductor transistor 102.
Above-mentioned, critical size (AEI CD) is then checked after the etching for shared/square contact window pattern 120/122 in the aperture of patterns of openings 136/138, that is is the rough aperture that equals follow-up preformed contact window.So shared/the aperture of square contact window pattern 120/122 of gained and the difference in the aperture of patterns of openings 136/138 then form the first/two aperture difference, and wherein the ratio of second aperture difference and first aperture difference is aforesaid relative aperture deviation ratio.
In above-mentioned technology, the relative aperture deviation ratio between two kinds of contact windows is to be controlled with the etching parameter that the step 130 of layer 112 is kept out in the etching etching by the step 128 of etching material layer 114.For example, in etching step 128, can control the thickness of the polymeric membrane that produces, and control the pore size of patterns of openings 124/126 indirectly by the gas flow of adjusting fluorine-containing hydrocarbon compound; In etching step 130, can promptly adjust etch quantity by adjusting etching period, the pore size of control patterns of openings 132/134.Therefore, the scope that utilization suitably selects for use the etching parameter may command relative aperture deviation ratio of etching step 128 and etching step 130 to be allowed in a technology, with avoid follow-up formed contact hole can not take place misconnection, too small with the element contact area or not with problems such as element contacts, and can promote the reliability of technology greatly.
And, utilize the etching parameter of above-mentioned adjustment two etching steps, with deposition and etched load effect (loading effect) deviation complementation, control the method for the relative aperture deviation ratio of different openings, can make that employed photomask does not need therefore to do correction in the technology, so can save the technology cost.
In addition, after forming shared contact window 136 and square contact window 138, follow-up technology be can proceed, contact hole and square contact hole (not illustrating) shared to form.For example, next removable pattern etched is kept out layer 113, inserts conductor material again in contact window 136,138, and removes unnecessary conductor material, till dielectric layer 110 surfaces expose.
In one embodiment, also can adjust etching parameter, the step 130 that makes the etching etching keep out layer 112 is a just etching (just-etching) step, keep out layer 112 to exposing dielectric layer 110 with while etching etching, form vertical in fact patterns of openings (not illustrating) in the layer 113 and keep out in pattern etched.Above-mentioned, the employed etching gas of the step of etching step 130 for example is CF
4, CO, O
2Certainly, in the case, also visual process requirements is adjusted the etching parameter of the step 128 of etching material layer 114, makes the relative aperture deviation ratio in the scope that technology allowed.
In addition, in other embodiments, also can adjust etching parameter, the step 130 that makes the etching etching keep out layer 112 is, carry out a undercut (under-etching) step earlier, only remove the partially-etched layer 112 of keeping out that patterns of openings 124/126 bottom is exposed, and keep out layer 112 in the more residual etching in patterns of openings 124/126 bottom.Wherein, the employed etching gas of the step of undercut step for example is CF
4, CO, O
2Then, carry out a low over etching step of selecting ratio again, with complete etching openings pattern 124/126 bottom residual etching keep out layer 112, with and the part dielectric layer of below.It is an anisotropic etching that the over etching step of above-mentioned low selection ratio can make etching process, and its employed etching gas for example is a fluoro-gas, for example is CF
4Similarly, in the case, also visual process requirements is adjusted the etching parameter of the step 128 of etching material layer 114, makes the relative aperture deviation ratio in the scope that technology allowed.
In sum, relative aperture deviation ratio between the different openings of method may command of the present invention aperture is in the scope that technology allowed, so that follow-up formed contact hole can not take place misconnection, too small with the element contact area or not with problems such as element contacts, and can promote the reliability of technology greatly.On the other hand, method of the present invention need not revised photomask, can reach the purpose of the relative aperture deviation ratio relative aperture deviation ratio between the different openings of control aperture, therefore can save the technology cost.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (16)
1. method of controlling the relative aperture deviation ratio of aperture different openings, wherein the technology of aperture different openings is as follows:
Form etching in regular turn and keep out layer, material layer and patterning photoresist layer on target material layer, this patterning photoresist layer has the first different patterns of openings of aperture and second patterns of openings; And
Carry out this material layer of etching in regular turn, the layer and the step of this target material layer are kept out in this etching, with in to should first, form first opening and second opening in this target material layer of this second patterns of openings respectively, wherein the difference in the aperture of the aperture of this first opening and this first patterns of openings is first aperture difference, the difference in the aperture of the aperture of this second opening and this second patterns of openings is second aperture difference, and the ratio between second aperture difference and first aperture difference is called the relative aperture deviation ratio, wherein the aperture of this first patterns of openings is greater than the aperture of this second patterns of openings
This method comprises:
With this patterning photoresist layer is mask, carry out first etching step, the design transfer of this patterning photoresist layer to this material layer, is formed patterning material layer, and produce polymeric membrane in the sidewall of this patterning photoresist layer and this patterning material layer;
This polymeric membrane with this patterning photoresist layer, this patterning material layer and sidewall thereof is a mask, carries out second etching step, keeps out layer to remove this etching that exposes at least, keeps out layer and form pattern etched;
Keeping out layer with this pattern etched is etching mask, removes this target material layer of part, in this target material layer, form this first, this second opening; And
Pass through in the method to adjust the etching parameter of this first etching step and/or the etching parameter of this second etching step, with the relative aperture deviation ratio that obtains presetting.
2. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this second etching step is for carrying out the over etching step, to keep out the enlarging patterns of openings that forms first opening in the layer in this pattern etched.
3. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this second etching step is for carrying out the just etching step, to keep out the vertical in fact patterns of openings of formation in the layer in this pattern etched.
4. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this second etching step is the undercut step, removes this etching of part that exposes and keeps out layer; And
Carry out the 3rd etching step, it is the over etching step, removes this target material layer of part that layer and below thereof are kept out in this residual etching.
5. the method for the relative aperture deviation ratio of control as claimed in claim 4 aperture different openings, wherein the 3rd etching step is the anisotropic etching step.
6. the method for the relative aperture deviation ratio of control as claimed in claim 4 aperture different openings, wherein the employed etching gas of the 3rd etching step is a fluoro-gas.
7. the method for the relative aperture deviation ratio of control as claimed in claim 2 aperture different openings wherein feeds fluorine-containing hydrocarbon compound as etching gas in this second etching step, this fluorine-containing hydrocarbon compound is CHxFy, wherein x=1,2,3; Y=1,2,3.
8. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, the etching parameter of wherein adjusting this first etching step comprises the flow of etching gas.
9. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, the etching parameter of wherein adjusting this second etching step comprises etching period.
10. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this first opening is shared contact window, and this second opening is square contact window.
11. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this etching is kept out layer and is comprised the I-line photoresistance.
12. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this material layer is hard mask bottom anti-reflection layer.
13. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this patterning photoresist layer is 193 nanometer photoresistances.
14. the method for the relative aperture deviation ratio of control as claimed in claim 1 aperture different openings, wherein this target material layer comprises dielectric layer.
15. the method for the relative aperture deviation ratio of control as claimed in claim 3 aperture different openings, wherein the etching gas of this second etching step is CO, O
2And CF
4
16. the method for the relative aperture deviation ratio of control as claimed in claim 4 aperture different openings, wherein the etching gas of this second etching step is CO, O
2And CF
4
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| CN102298259A (en) * | 2010-06-22 | 2011-12-28 | 无锡华润上华半导体有限公司 | Photoetching method |
| CN105261591B (en) * | 2015-08-19 | 2018-05-22 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6287951B1 (en) * | 1998-12-07 | 2001-09-11 | Motorola Inc. | Process for forming a combination hardmask and antireflective layer |
| CN1885495A (en) * | 2005-06-21 | 2006-12-27 | 联华电子股份有限公司 | Etching method and contact window forming method |
| CN1971855A (en) * | 2005-11-24 | 2007-05-30 | 联华电子股份有限公司 | Method for controlling aperture difference of different hatches simultaneously and etching technique |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6287951B1 (en) * | 1998-12-07 | 2001-09-11 | Motorola Inc. | Process for forming a combination hardmask and antireflective layer |
| CN1885495A (en) * | 2005-06-21 | 2006-12-27 | 联华电子股份有限公司 | Etching method and contact window forming method |
| CN1971855A (en) * | 2005-11-24 | 2007-05-30 | 联华电子股份有限公司 | Method for controlling aperture difference of different hatches simultaneously and etching technique |
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