CN101431128B - Production method of amorphous silicon laminated solar cell - Google Patents
Production method of amorphous silicon laminated solar cell Download PDFInfo
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- CN101431128B CN101431128B CN2008102366962A CN200810236696A CN101431128B CN 101431128 B CN101431128 B CN 101431128B CN 2008102366962 A CN2008102366962 A CN 2008102366962A CN 200810236696 A CN200810236696 A CN 200810236696A CN 101431128 B CN101431128 B CN 101431128B
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Abstract
The invention relates to a preparation process of an amorphous silicon tandem thin film solar cell, and the cell adopts a solar cell model with the structure of a glass substrate/TCO (transparent conductive thin film)/a top layer of PIN amorphous silicon thin film/a second layer of PIN amorphous silicon thin film/a third layer of PIN amorphous silicon thin film/an Al bottom electrode. The main process steps are as follows: (1) cleaning the substrate; (2) preparing the TCO (transparent conductive thin film); (3) preparing the top layer of PIN amorphous silicon thin film; (4) preparing the second layer of PIN amorphous silicon thin film; (5) preparing the third layer of PIN amorphous silicon thin film; (6) and preparing the Al electrode. The tandem solar cell is significantly characterized in that materials with the different forbidden band widths are combined together, thereby widening the scope of spectral response, effectively preventing the light-induced degradation, so as to improve the photovoltaic conversion efficiency and the stability of the cell. Simultaneously, the preparation process is simple, and the large-scale production can be realized.
Description
Technical field
The invention belongs to non-crystal silicon solar cell manufacturing technology field, be specifically related to a kind of preparation method of amorphous silicon laminated solar cell.
Background technology
Energy crisis and environmental pollution are the significant challenge that the mankind are faced with, and tap a new source of energy and renewable and clean energy resource is one of technical field of 21 century tool decision influence.According to the world energy sources committee and International Institute for Applied Systems Analysis's prediction, global fossil fuel shortage was used 100 years, and, because the CO of combustion of fossil fuels discharging
2Increase with the energy consumption index Deng gas, heavy damage the ecological balance.A series of problems such as acid rain have been caused such as greenhouse effect.Seek a kind of renewablely, free of contamination clean energy resource becomes a urgent task.Solar cell grows up just under these circumstances.
Solar cell can be divided into (1) silicon solar cell according to the difference of material therefor; (2) with inorganic salts such as GaAs III one IV compounds of group. cadmium sulfide, the battery that multiple compound such as copper indium diselenide is a material; (3) nano crystal solar cell.In all kinds of batteries, because silicon is the second largest element of reserves on the earth, as semi-conducting material, people are maximum to its research, and its stable performance, nontoxic, pollution-free. so silicon series battery technology comparative maturity, and had commercial value. in silicon series solar cell, monocrystalline silicon transformation efficiency height, but cost height, limited its application, and amorphous silicon has higher absorption coefficient in visible light, can realize large area film deposition cheaply, and making it has more wide application prospect than single crystal silicon solar cell.
For unijunction solar cell, even if with crystalline material preparation, the theoretical limit of its conversion efficiency generally also has only about 25% under the illumination condition of AM1.5.This be because, the Energy distribution broad of solar spectrum, and any semiconductor can only absorb the wherein energy photon higher than own band gap magnitude.Remaining photon is not to pass battery to be changed into heat energy by the back metal absorption, is exactly the atom of energy delivery being given battery material itself, makes the material heating.These energy all can not become electric energy by producing photo-generated carrier.Moreover, the thermal effect of these photons generations also can raise battery operated temperature and battery performance is descended.
The stability problem that single junction cell exists can be raised the efficiency, be solved to lamination a-Si:H solar cell, this be because:
(1) laminated cell has been widened scope of spectral response the combination of materials of different energy gaps together.
(2) the i layer of top battery is thinner, so that the space charge that produces after the illumination is not obvious to the modulation of i layer electric field, and electric-field intensity distribution changes little in the i layer.Be still high field region, this high electric field on the active area obviously is enough to the photo-generated carrier in the i layer is effectively extracted out, thereby stops the generation of photic decline.
(3) photo-generated carrier of end battery generation is about half of single junction cell, and the photic attenuating effect of end battery is less.
Summary of the invention
The object of the present invention is to provide a kind of production method of amorphous silicon laminated solar cell, this method can improve the photoelectric conversion efficiency of solar cell, makes it to help industrialization production.
(1) cleans substrate;
(2) preparation P type amorphous silicon carbide film on substrate; Wherein each gas flow of Tong Ruing is: B
2H
6: 25～35sccm, CH
4: 25～35sccm, SiH
4: 35～45sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(3) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH4:25～35sccm, radio-frequency power are 80～150W, substrate temperature is 180～240 ℃;
(4) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(5) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 40～50sccm, CH
4: 20～30sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(6) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25～35sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(7) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(8) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 40～50sccm, CH
4: 20～30sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(9) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25～35sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(10) preparation N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(11) come the AM aluminum metallization hearth electrode with resistance vaporation-type vacuum aluminum-plating equipment, wherein the base vacuum degree is 10
-3Pa～
-4Pa, sputtering time are 2 minutes～4 minutes, and voltage is 150V～175V.
The present invention relates to the amorphous silicon laminated solar cell fabricating technology.The characteristics of this lamination solar cell maximum are the combination of materials of different energy gaps together, have widened scope of spectral response and the effectively generation of the photic decline of prevention.The present invention adopts the solar-electricity pool model of " glass substrate/TCO (transparent conductive film)/top layer PIN amorphous silicon membrane/second layer PIN amorphous silicon membrane/3rd layer PIN amorphous silicon membrane/Al hearth electrode " structure, and uses the transparent conducting ZnO film as preceding electrode.Adopt six Room continuous plasmas to strengthen each layer film that chemical gas-phase deposition system prepares this solar cell.In the process of this battery of preparation, by continuous process optimization, improved the conversion efficiency and the stability of battery, improved cleaning way simultaneously.A kind of preparation technology of the complete amorphous silicon laminated solar cell with industrialization potential is provided.This technology can improve the photoelectric conversion efficiency of solar cell, makes it to help industrialization production.
Embodiment
The present invention adopts the lamination solar cell model of " glass substrate/TCO (transparent conductive film)/top layer PIN amorphous silicon membrane/second layer PIN amorphous silicon membrane/3rd layer PIN amorphous silicon membrane/Al hearth electrode " structure.Related manufacturing process technology is divided into three parts,
Below by describing the present invention more in detail by embodiment.
Example 1:
Example of the present invention utilizes PECVD (plasma-reinforced chemical vapor deposition) technology to prepare each thin layer, specifically comprises the steps:
(1) cleans substrate
(2) preparation P type amorphous silicon carbide film on substrate, wherein each gas flow of Tong Ruing is: B
2H
6: 30sccm, CH
4: 30sccm, SiH
4: 45sccm, radio-frequency power are 120W, and substrate temperature is 230 ℃;
(3) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 30sccm, radio-frequency power are 120W, and substrate temperature is 220 ℃;
(4) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 25sccm, SiH
4: 20sccm, radio-frequency power are 120W, and substrate temperature is 220 ℃;
(5) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 45sccm, CH
4: 25sccm, SiH
4: 20sccm, radio-frequency power are 120W, and substrate temperature is 220 ℃;
(6) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 35sccm, radio-frequency power are 150W, and substrate temperature is 180 ℃;
(7) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 35sccm, SiH
4: 20sccm, radio-frequency power are 80W, and substrate temperature is 220 ℃;
(8) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 45sccm, CH
4: 25sccm, SiH
4: 20sccm, radio-frequency power are 120W, and substrate temperature is 180 ℃;
(9) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 30sccm, radio-frequency power are 100W, and substrate temperature is 220 ℃;
(10) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 35sccm, SiH
4: 20sccm, radio-frequency power are 120W, and substrate temperature is 220 ℃;
(11) preparation aluminium electrode on N type microcrystalline silicon film
Wherein the base vacuum degree 10
-3Pa, sputtering time: 2 minutes, voltage was 200V.
Example 2:
(1) cleans substrate
(2) preparation P type amorphous silicon carbide film on substrate, wherein each gas flow of Tong Ruing is: B
2H
6: 25sccm, CH
4: 35sccm, SiH
4: 40sccm, radio-frequency power are 100W, and substrate temperature is 210 ℃;
(3) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25sccm, radio-frequency power are 100W, and substrate temperature is 200 ℃;
(4) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 30sccm, SiH
4: 15sccm, radio-frequency power are 100W, and substrate temperature is 200 ℃;
(5) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 50sccm, CH
4: 20sccm, SiH
4: 15sccm, radio-frequency power are 100W, and substrate temperature is 210 ℃;
(6) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 30sccm, radio-frequency power are 100W, and substrate temperature is 210 ℃;
(7) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 30sccm, SiH
4: 15sccm, radio-frequency power are 100W, and substrate temperature is 200 ℃;
(8) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 50sccm, CH
4: 20sccm, SiH
4: 15sccm, radio-frequency power are 100W, and substrate temperature is 210 ℃;
(9) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25sccm, radio-frequency power are 80W, and substrate temperature is 200 ℃;
(10) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 30sccm, SiH
4: 15sccm, radio-frequency power are 100W, and substrate temperature is 200 ℃;
(11) preparation aluminium electrode on N type microcrystalline silicon film
Wherein the base vacuum degree 10
-3Pa, sputtering time: 2 minutes, voltage was 175V.
The above is preferred embodiment of the present invention, but the present invention should not be confined to the disclosed content of this embodiment.So everyly do not break away from the equivalence of finishing under the spirit disclosed in this invention or revise, all fall into the scope of protection of the invention.
Claims (1)
1. a production method of amorphous silicon laminated solar cell comprises the steps:
(1) cleans substrate;
(2) preparation P type amorphous silicon carbide film on substrate; Wherein each gas flow of Tong Ruing is: B
2H
6: 25～35sccm, CH
4: 25～35sccm, SiH
4: 35～45sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(3) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25～35sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(4) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(5) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 40～50sccm, CH
4: 20～30sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(6) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25～35sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(7) preparation N type microcrystalline silicon film on I type amorphous silicon membrane, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(8) preparation P type amorphous silicon carbide film on N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: B
2H
6: 40～50sccm, CH
4: 20～30sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(9) preparation I type amorphous silicon membrane on P type amorphous silicon carbide film, wherein each gas flow of Tong Ruing is: SiH
4: 25～35sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(10) preparation N type microcrystalline silicon film, wherein each gas flow of Tong Ruing is: PH
3: 25～35sccm, SiH
4: 15～25sccm, radio-frequency power are 80～150W, and substrate temperature is 180～240 ℃;
(11) come the AM aluminum metallization hearth electrode with resistance vaporation-type vacuum aluminum-plating equipment, wherein the base vacuum degree is 10
-3Pa～
-4Pa, sputtering time are 2 minutes～4 minutes, and voltage is 150V～175V.
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| CN104835864B (en) * | 2011-03-23 | 2016-10-19 | 南通大学 | A kind of solaode |
| CN102496652A (en) * | 2011-12-16 | 2012-06-13 | 大连理工常州研究院有限公司 | Preparation method for ultraviolet-proof thin-film solar cell |
| CN102628164B (en) * | 2012-04-27 | 2013-06-12 | 保定天威薄膜光伏有限公司 | Method for controlling low electrical property and appearance defect of solar battery module |
| CN102983215A (en) * | 2012-11-19 | 2013-03-20 | 中国科学院半导体研究所 | Method for preparing silicon thin-film solar cells with silicon nano-wire structures |
| CN107123700A (en) * | 2017-04-24 | 2017-09-01 | 广东蒙泰纺织纤维有限公司 | A kind of hollow polyimide fiber solar micro battery and its manufacture method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368892B1 (en) * | 1997-07-28 | 2002-04-09 | Bp Corporation North America Inc. | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1866546A (en) * | 2006-05-18 | 2006-11-22 | 威海蓝星玻璃股份有限公司 | Solar cell and preparing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368892B1 (en) * | 1997-07-28 | 2002-04-09 | Bp Corporation North America Inc. | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1866546A (en) * | 2006-05-18 | 2006-11-22 | 威海蓝星玻璃股份有限公司 | Solar cell and preparing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-164904A 2000.06.16 |
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Assignee: Shenzhen Wanyelong Solar Technology Co., Ltd. Assignor: Huazhong University of Science and Technology Contract record no.: 2011440000023 Denomination of invention: Production method of amorphous silicon laminated solar cell Granted publication date: 20100609 License type: Exclusive License Open date: 20090513 Record date: 20110107 |
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