CN101451963B - Method and system for defect detection - Google Patents
Method and system for defect detection Download PDFInfo
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- CN101451963B CN101451963B CN2007101428793A CN200710142879A CN101451963B CN 101451963 B CN101451963 B CN 101451963B CN 2007101428793 A CN2007101428793 A CN 2007101428793A CN 200710142879 A CN200710142879 A CN 200710142879A CN 101451963 B CN101451963 B CN 101451963B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Abstract
A system, method and computer readable medium for reticle evaluation, the method includes: (i) obtaining, during an imaging process, multiple images of the reticle under different polarization and optionally interferometric conditions; and (ii) generating an output aerial image in response to (i) the multiple images and (ii) differences between the imaging process and an exposure process; wherein during the exposure process an image of the reticle is projected onto a wafer.
Description
The present invention requires to enjoy the right of priority that the sequence number of submitting on August 1st, 2006 is 60/821,056 the interim patent of the U.S..
Technical field
The present invention relates generally to mask and detects the mask evaluation areas that relates in particular to by the aerial image simulation optical system.
Background technology
Modern microelectronic component uses the photoetching process manufacturing usually.In this technique, semiconductor crystal wafer at first applies photoresist layer.Then use mask (being also referred to as photomask, perhaps mask) this photoresist layer to be exposed to (during so-called exposure technology) illumination light, develop subsequently.When developing, remove the positive photoetching rubber that exposes (alternatively, remove be unexposed negative photoresist), and remaining photoresist produces the image of mask at wafer.Thereafter, the superiors of etched wafer.Peel off remaining photoresist thereafter.For the multilayer wafer, then repeat above-mentioned steps to produce the layer of patterning subsequently.
Will be understood by those skilled in the art that mask is zero defect as much as possible in order to produce the semiconductor product of operation, be preferably complete zero defect.Therefore, need the mask Identification Tools to detect the various defectives in the mask, it reduces potentially microelectronic circuit and makes output.
Make the electric field of the positive back of mask (mask) relevant with the field of irradiation light by the mask effect traditionally.The concept of mask effect also is used for imaging and throws the partially coherent light that applies, and some variable description images that wherein typically pass through in this case the Hopkins formula form.For the mask with the suitable pattern characteristics of illumination wavelengths, the Kirchoff boundary condition is also known as " thin mask approximate ", can effectively use to calculate final aviation pattern or alternatively, calculates the intensity pattern on the wafer.Yet in case that the feature on mask becomes dimensionally is suitable with illumination wavelengths, during as the situation of the existing template with present advanced level, approximate equation is no longer valid, and the transmission of mask begins to depend on the angle of polarization state and incident light.
For special characteristic common in the modern mask, typically be the special characteristic of the spatial symmetry with height, for example can be based on amplitude, phase place and the polarization state of analysis result and effective numerical model prediction diffraction light.For this calculating or other very invalid or complicated especially mask pattern, can be still use the knowledge of mask design in conjunction with specific interferometry or wave front induction technology, with the very approximate performance of the order of diffraction that obtains carrying most of figure power.
Dwindling fast of characteristic dimension causes in exposure system such as the numeric aperture values that increases gradually in the stepper in semiconductor product.At present, the numerical aperture of exposure system is greater than 1, increases and be desirably in towards 1.4 rapidly to reach 1.8 future.
The high large incident angle of numerical aperture value representation, exposure technology is easier to be subjected to the impact of polarization-dependent effects, especially for those effects that occur when the large incident angle of etchant resist glazing.
The aerial imagery instrument is reviewed instrument such as Airborne Survey instrument and aviation, attempts to imitate exposure technology and still is different from exposure technology application imaging process.Although during exposure technology, the pattern of mask dwindles, during imaging process, the image of mask amplifies.This amplification causes the consumption of incident angle may be in approximately hundreds of identical enlargement factors.The result of amplification technique does not imitate by the aerial imagery system in the polarization effect that the wafer face occurs.Especially, the general contrast that reduces the p-polarized light (also be called TM) relevant with the contrast of s-polarized light (being also referred to as TE) of exposure technology, and imaging technique is not carried out this and is dwindled.
Fig. 1 and Fig. 2 show the difference between p-polarized light component and s-polarized light component.
Fig. 1 shows the exposure system 10 that comprises the light source 12 that the s-polarized light is provided.Diffraction produces two or more coherent ray (such as light 15a and the 15b of Fig. 1), and its diverse location place on pupil plane occurs, and every coherent ray reaches the picture plane from different directions.
Because coherent ray shines on the wafer from different directions, all field vectors are with the mode combination of vectorial superposition, to produce the some electric field.
Aerial image is this intensity.Angular difference between two incident beams produces angle of elevation polarization effect.
Be to be object lens 16 under mask 14 and the mask under the light source 12.S polarized light projects the transparent part that the object lens 16 on the wafer 20 transmit by mask 14 towards the image with mask 14.The electric-field vector of s-polarized light is perpendicular to the plane of Fig. 1.Extraction image 30 is the vertical views at the electric-field vector of the s-of pupil plane place polarized light emission, in the upper part of object lens 16, is to locate the side view of coherent ray 42 and 44 on wafer (or picture) plane and propose image 32 perhaps.The direction of the field vector of two round dots 46 and 48 these light of expression.
Fig. 2 shows identical exposure system 10 but light source 12 provides the p-polarized light.The intensity vector of p-polarized light is shown in the plane of Fig. 1.Proposition image 34 is the vertical views at the electric-field vector of the emission of the office, top of object lens 16 p-polarized light, and proposition image 36 is the side views in wafer plane place coherent ray 52 and 54.Two field vectors that round dot 56 is relevant with these light with 58 expressions.Notice that each light source can be described as the radiant rays that generation comprises S and P polarized component.
Aerial image is that square (square) that shine the electric-field vector of the light on wafer or the sensor self puts product.Electric field can be divided into two independently polarized component-p-polarization (TM) component and s-polarization (TE) components.Theory in the numerical aperture place imaging of high value represents that the vector sum of s-polarized light obviously is different from the vector sum of p-polarized light, and reason is the wide-angle incident that runs in high-NA projection place.Certainly, when being focused at from different directions when being independent of the polar angle (angle between the optical axis of light beam and system) of light beam as the angle between the electric-field vector of two on plane bundle s-light beam, this is the situations of two bundle p-light beams of course not.This means the height independence of the contrast of the image that is formed by the p-polarized light on incident angle on the picture plane.Along with the characteristic feature size on photomask is dwindled, be used for the spatial frequency place that successful image forms at needs, the light of assembling with large incident angle carries the power of major part, wherein depends on light beam in limit incident angle place critical feature size.
Yet when the NA value that surpasses～0.7, two kinds of systems all produce its attribute and significantly deviate from the image of the attribute of low numerical aperture imaging place acquisition, the increase of the relative power that carries owing to the convergent beam by high incident angle.
Although projection system typically adopts very high incident angle, the large enlargement ratio that is applied by imaging process causes being focused at as the light on the plane and has less incident angle.This basic difference causes respectively by the same mask pattern on wafer with at the different images that produces as the plane of imaging system.
In order to make imaging system imitate exposure technology with reliable fashion, should compensate the difference between exposure technology and the imaging process.
Therefore, need to be used for efficient system and the method for mask assessment.
Summary of the invention
A kind of method for the mask assessment, the method comprises: (i) during imaging process, under different polarization conditions, obtain the multiple image of mask; And (ii) produce the output aerial image by processing described multiple image with the difference that compensates between described imaging process and the described exposure technology, wherein the image at mask during the exposure technology projects on the wafer, and described processing multiple image comprises: with image the specific polarization component be decomposed into its spectral components; And use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response multiple image that is used to form described mask.
A kind of system for the mask assessment, this system comprises: the storage unit of information that is suitable for storing the multiple image of expression mask, and processor, be connected to storage unit, be suitable for receiving the information of the described multiple image of expression, wherein obtaining multiple image during the imaging process and under different polarization conditions; And produce the output aerial image by processing described multiple image with the difference that compensates between described imaging process and the described exposure technology, wherein the image at mask during the exposure technology projects on the wafer, and described processing multiple image comprises: the specific polarization component of image is decomposed into its spectral components; And use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask.
A kind of method for aerial imagery, the method comprises: during imaging process, the intensity of controlling multiple light and polarization are to be limited to the basic mask lighting condition identical with the lighting condition of mask during exposure technology, and wherein the image at mask during the exposure technology projects on the wafer; And obtain the image of mask and process the gained image with the difference of compensation between described imaging process and described exposure technology, wherein said processing gained image comprises: the specific polarization component of image is decomposed into its spectral components; And use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask.
A kind of system for aerial imagery, comprise: imaging system, be suitable for using intensity that imaging process controls multiple light simultaneously and polarization during the imaging process to limit the basic mask lighting condition identical with the lighting condition of mask during exposure technology, wherein the image of mask projects on the wafer during described exposure technology; Sensor is suitable for obtaining the image of mask; And processor, be suitable for processing the image that obtains to compensate difference between described imaging process and the described exposure technology, wherein said processing gained image comprises that the specific polarization component with image is decomposed into its spectral components, and use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask.
Description of drawings
In order to understand the present invention and to understand how to implement the present invention, by infinite embodiment, now with reference to accompanying drawing embodiment is described, wherein:
Fig. 1 and Fig. 2 show through the p-polarized light component of exposure system and the difference between the s-polarized light component;
Fig. 3 shows system according to the embodiment of the present invention;
Fig. 4 shows method according to the embodiment of the present invention; And
Fig. 5 shows the according to the embodiment of the present invention decay of the relation between the spectral components of the s-of intermediate image polarized component and these spectral components.
Embodiment
Term " mask " can and mean mask or mask according to traditional meaning interpretation.The layer that mask generally comprises transparent substrates and opaque material (such as chromium) forms thereon.Mask can comprise also that mask, one or more extra materials form under opaque material such as tack coat, anti-reflecting layer, phase shift layer, damping layer etc.Typical mask comprises the binary mask version, and mask comprises optical proximity effect correction feature, phase shifting mask (PSM), triple PSM of slackening, alternative P SM, slackens PSM, half PSM, freely mask and dark-field mask version.
As used herein, term " exposure system " refers generally to use image that electromagnetic radiation the prints mask etching system to the sample.Exposure system can comprise stepper, scanning projection system or step-and-repeat system.Exposure technology is the photoetching process that applies by exposure system.
As used herein, term " imaging system " refers generally to produce the system of mask layout picture.Imaging system can be reviewed system or mask gauging system for mask evaluating system such as mask detection system, mask.Imaging system is used imaging process.
Notice all patterns ratio that do not conform to the rules.
Be provided for system, the method and computer program product of mask assessment.
By receiving or obtain at least one image, difference between system, method and computer program product compensation exposure technology and the imaging, if wherein obtain multiple image, then each image is obtaining under the different polarization condition and is not also obtaining under homophase (interferometry) condition alternatively.Difference between polarization (and alternatively phase) condition enables TM and the TE component of insulation aviation image, then enables to apply at TM and TE image to revise conversion, and adds correction TE with suitable height and TM to produce the output aerial image.
Notice when filtering out the TM component, to obtain an aerial image, and when filtering out the TE component, can obtain other parts, but so unnecessary.For example, at least one aerial image can comprise two kinds of components.Suppose known different polarization (and alternatively phase) condition, can extract TE and TM component.
Can be by using one or more polarized components to obtain image at the illumination passage and/or in the set passage.
Expediently, acquisition channel is included in polarization (and the alternatively phase) light filter on plane, hole.The accurate details of these polarizations (and alternatively phase) light filter depends on specific lighting condition and the pattern on mask.
Notice that following explanation mainly refers to polarization for the ease of explaining.Notice that system and method also responds these phase differential according to various embodiments of the present invention.Therefore, can use phase retarder, phase shifter and affect mutually element, and use the poor phase response aerial imagery of dependent phase that can compensate between imaging process and exposure process to process.
Expediently, acquisition channel and illumination passage all comprise polarizing filter.
In case determine TM and the TE component of aerial image, then their experience compensate for process.Compensate for process comprises the spatial spectral component that the TE of aerial image and TM component is decomposed into they.This decomposition can comprise uses the Fourier change type.Use the one or more spectral components of correction function correction, then use favourable inverted functions so that the correction polarized component of aerial image to be provided.Then, the TE of correction and TM divide duration set (sum) so that so-called output aerial image to be provided.
Fig. 3 shows imaging system 80 according to the embodiment of the present invention.
According to the embodiment of the present invention, provide a kind of imaging system 80.Imaging system 80 comprises illumination passage 81 and acquisition channel 91.Illumination passage 81 comprises light source 82 and collector lens 87.Acquisition channel 91 comprises object lens 92 and camera 93.
According to the embodiment of the present invention, illumination passage 82 also comprises polarizer 83.Notice that the weakened phase restoring method may also need the illumination channel separation is several subchannels (corresponding to several light beams).
For the ease of explaining, Fig. 3 shows and belongs to the throw light on single polarizer 83 of passage and single camera 93.
Expediently, mask 14 is positioned on the object plane 98 and polarizer 83 is positioned on the illumination iris face 95.One focal length of mask 14 and polarizer 83 Range Focusing lens 87.
Notice, extraly or alternatively, acquisition channel 91 can comprise one or more polarizers.Notice the interferometry that needs some types as the understanding of the relative phase between the coherent light beam on the plane inciding from different directions, wherein system can comprise phase filtrator, phase-plate etc.
According to the embodiment of the present invention, can be controlled in light intensity and the polarization of illumination iris face 95 by polarizer 83.Therefore, it accurately controls polarization and the intensity of the light of different incidence angles.Especially, on pupil (pupil), can determine polarization and decay.
Expediently, can control polarization and the intensity of the multiple spot on the illumination iris face.
Notice that further acquisition channel 91 can be included in camera Bertrand lens before, thereby the image of gained is the image (being also referred to as the Bertrand image) of pupil plane.
Notice that further acquisition channel 91 can comprise a plurality of cameras that can obtain simultaneously a plurality of aerial images.
According to the embodiment of the present invention, camera obtains other image of focus condition portion by them.For example, camera image that can obtain focusing on another camera image that may obtain bluring simultaneously.
According to the embodiment of the present invention, camera obtains the image by their polarization conditions difference.Another camera can obtain being incident upon the image on another polarization when a camera obtains being incident upon image on the specific polarization.
Those of ordinary skill in the art will understand the combination that also can affect by imaging system different focuses and polarization conditions.
Camera 93 transmits the information of expression gained image to storage unit 95.Storage unit 95 is connected to processor 96.Processor 96 is connected to storage unit 95 and is suitable for: (i) receive the information of expression multiple image, wherein multiple image obtains under the different polarization condition; And the multiple image that (ii) responds the difference between the result who compensates aerial image (or image set) and exposure technology, produce the output aerial image, wherein the image at mask during the exposure technology projects on the wafer.
Processor 95 also can be analyzed aerial image, as further shown in Figure 4.This analysis can comprise execution chip and chip comparison, chip and database relatively, determine process window, the critical dimension of assessment mask feature, assessment is by the critical dimension of the feature of exposure technology printing, determine the print capacity of mask defective, produce defect map, produce signal distribution plots, carry out statistical study of defective or feature etc.
According to another embodiment of the present invention, utilize the information that receives expression multiple image (under different polarization conditions, obtaining) and the processing of carrying out the teleprocessing unit carries out image of above-described operation.
Fig. 4 shows the method 100 that is used for the mask assessment according to the embodiment of the present invention.
Stage 110 can comprise at least one following steps or its combination: (i) utilize the multiple defect passage, each passage is characterised in that different polarization (and alternatively phase) attribute, (ii) obtain the polarization properties (with light path difference alternatively) that multiple image changes the illumination passage simultaneously, (iii) change polarization properties and the light path of sense channel and the passage that throws light on alternatively.
The stage 120 that produces the output aerial image for the difference between response multiple image and response imaging process and the exposure technology after stage 110.During exposure technology, the image of mask projects on the wafer.
Expediently, the stage 120 can comprise these difference of compensation.
Notice can calculate and be stored in exposure technology to the conversion between the imaging process with subsequently for the treatment of one or more other images.
According to the embodiment of the present invention, the stage 120 comprise response polarization and exposure technology and imaging process alternatively mutually association attributes produce the output aerial image.Expediently, exposure technology and imaging process react with p polarized light and s polarized light in a different manner.Especially, exposure technology causes the intensity pattern on the wafer, and usually, this pattern has the contrast that is different from the image that is produced by imaging system, and in addition, the intensity pattern height depends on the polarisation of light attitude.The generation of output aerial image should be considered this difference.
Expediently, the stage 120 comprises sub 121-129.
Stage 121 comprises processes multiple image so that the different polarization component of intermediate image to be provided.After the experience compensate for process, intermediate image will become the output aerial image.When the non-compensating image technique of middle image representation as a result the time, output aerial image will imitate the result of exposure technology.
It is the stage 123 that the specific polarization component of intermediate image is decomposed into its spatial spectral component after stage 121.
Stage 123 can comprise the application fourier transform, although can use other analytic function.
It is the stage 125 of using correction function at least one these spectral components after stage 123.
Stage 125 comprises at least a polarization association attributes application of response correction function.It can also comprise at least a following steps or its combination: (i) use correction function at single spectral components, (ii) use correction function at the single spectral components corresponding to the gradient (pitch) of the repeat patterns of mask, (iii) at square correction function that be inversely proportional to of spectral components application with the spectral frequency of spectral components, (iv) angle between the response incident ray is used correction function.
Fig. 5 shows relation between the spectral components 201-204 of s-polarized component of intermediate image according to the embodiment of the present invention and the decay of these spectral components.
The frequency of spectral components 201 is corresponding to the gradient of the repeat patterns of mask.Other spectral components is corresponding to the propagation of this gradient.
Level curve 220 expression imaging systems represent that to the response while curve 222 of s polarized light exposure systems are to the response of s-polarized light.Difference between these curves represents the decay of these spectral components.Decay typically with square being inversely proportional to of these frequencies.Separate because the first spectral components 201 is relative with other spectral components, it is significantly decayed about other spectral components.
In order to simplify compensate for process and to enable in real time or real-Time Compensation almost, compensate for process can focus at the first spectral components.
Expediently, each spectral components of the image that decomposes represents the result of interference of two (or more) different coherent fields, approaches from the different directions that separates specific incident angle.The result of this interference be proportional to the vector sum of interfering electric field square.This relation can draw from the design proposal of imaging system.Under given conditions, it exists in the exposure system of a new generation, and it can illustrate each spectral components through the linear process of contrast correction, and contrast correction depends on the angle between incident ray and depends on their polarization state.This can finish a high-frequency spectrum component by the correction of the part spectral power that carried by different spectral components and be easy to especially the technique that produces.Simple wafer etchant resist model with optical model, can be used for obtaining and calibrates this linear relationship.Use this linear revise conversion in fourier space after, the favourable vector sum counter-rotating of all frequency components is to receive the desired image of TE and TM polarized component.
Getting back to Fig. 4, is the stage 127 of rebuilding the specific polarization component of intermediate image after the stage 125, so that the compensating polarizing component of intermediate image to be provided.
Another polarized component that does not experience expediently the intermediate image of compensate for process for compensating polarizing component and the response of response intermediate image after stage 127 produces the output aerial image.Notice under many situations, middle two different polarized components all experience compensate for process.Expediently, the stage 129 comprises the polarized component that adds with intermediate image.
Export the stage 130 of aerial image after stage 129 for analysis.This analysis can comprise at least one following steps or its combination: (i) estimation is by the critical dimension of the feature of the wafer of exposure technology manufacturing, (ii) critical dimension of estimation mask feature, (iii) process window of assessment exposure technology, and (iv) the response focometry is determined the polarization properties of the focus alignment of imaging process.
Can carry out each above-described method by the computing machine that execution is stored in the computer program in the computing machine medium.Therefore, provide a kind of computer-readable medium.Computer-readable medium has for mask and is evaluated at wherein the computer-readable code of specializing, and computer-readable code comprises the indication for following operation: the multiple image that obtains mask under different polarization conditions; And response multiple image and response the image of mask project on the wafer during exposure technology and obtain the imaging process of multiple image during imaging process between difference, produce the output aerial image.
Expediently, computer-readable code comprises the indication for following operation: the specific polarization component of image is decomposed into its spectral components, and uses correction function at least one spectral components; Wherein correction function responds at least a polarization association attributes.
Expediently, computer-readable code comprises for the finger of using correction function at single spectral components not.
Expediently, mask comprises the pattern of repetition, and wherein computer-readable code comprises in the indication of using correction function corresponding to the single spectral components of the gradient of repeat patterns.
Expediently, computer-readable code comprises in the indication of using correction function corresponding to the single spectral components of the gradient of repeat patterns.
Expediently, computer-readable code comprises for the indication of using correction function at spectral components, and wherein the spectral frequency of this correction function and spectral components square is inversely proportional to.
Expediently, the angle between the computer-readable code response incident ray.
Expediently, computer-readable code comprises for the indication that utilizes the Multiple detection passage, and each sense channel is characterised in that by being controlled at and gathers polarisation of light and the determined different polarization attribute of intensity on the pupil plane.
Expediently, computer-readable code comprises for when by being controlled at the indication that obtains multiple image when polarisation of light and intensity on the illumination iris face change the polarization properties of illumination passage.
Expediently, computer-readable code comprises for the indication that changes the polarization properties of sense channel and illumination passage by being controlled at polarisation of light and intensity on the pupil plane.
Expediently, computer-readable code comprises that estimation is by the indication of the critical dimension of the feature of the wafer of exposure technology manufacturing.
Expediently, computer-readable code comprises the indication for the critical dimension of estimating the mask feature.
Expediently, computer-readable code comprises the indication for the process window of assessment exposure technology.
Expediently, computer-readable code comprises the polarization properties out of focus of imaging process of indication determine to(for) the response focometry.
Expediently, computer-readable code comprises the indication for the defect map that produces mask.
Expediently, computer-readable code comprises the indication that produces the output aerial image for the phase retardation attribute of response exposure technology and imaging process.
Under the scope that does not break away from the appended claims and be limited by it, those of ordinary skill in the art will readily appreciate that the various modifications and variations of part can be applied to the embodiments of the present invention of describing before this.
Claims (27)
1. one kind is used for the method that mask is assessed, and the method comprises
During imaging process, under different polarization conditions, obtain the multiple image of described mask; And
Produce the output aerial image by processing described multiple image with the difference that compensates between described imaging process and the exposure technology,
Wherein the image of described mask projects on the wafer during described exposure technology, and the described multiple image of described processing comprises:
The specific polarization component of image is decomposed into its spectral components;
Use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response multiple image that is used to form described mask; And
Analyze described output aerial image to estimate the critical dimension of mask feature.
2. method according to claim 1 is characterized in that, described difference comprises the difference between the polarization association attributes of described exposure technology and described imaging process.
3. method according to claim 2 is characterized in that, the described polarization association attributes of described exposure technology represents the polarization related transfer function of described exposure technology.
4. method according to claim 1 also is included in and uses described correction function on the single spectral components.
5. method according to claim 1, it is characterized in that, the described multiple image that obtains described mask comprises and utilizes Multiple detection passage, each sense channel to be characterised in that polarisation of light and the determined different polarization attribute of intensity that gathers on the pupil plane by being controlled at.
6. method according to claim 1 is characterized in that, the described multiple image that obtains described mask obtains described multiple image when being included in and changing the polarization properties of illumination passage by the described polarization that is controlled at the light on the illumination iris face and intensity.
7. method according to claim 1, it is characterized in that, the described multiple image that obtains described mask obtains described multiple image when being included in the polarization properties of the illumination that changes the combination be selected from coherent illumination, incoherent illumination, partial coherence illumination or multiplephase dry model.
8. method according to claim 1 is characterized in that, the described multiple image that obtains described mask comprises the polarization properties that changes sense channel and illumination passage by being controlled at polarisation of light and intensity on the pupil plane.
9. method according to claim 1 is characterized in that, further comprises estimation by the critical dimension of the feature of the wafer of described exposure technology manufacturing.
10. method according to claim 1 is characterized in that, further comprises the process window of assessing described exposure technology.
11. method according to claim 1 is characterized in that, further comprises the defect map that produces described mask.
12. method according to claim 1 is characterized in that, described difference comprises the difference between the phase retardation attribute of described exposure technology and described imaging process.
13. method according to claim 1, it is characterized in that, the described multiple image that obtains described mask comprises and utilizes Multiple detection passage, each sense channel to be characterised in that the determined different polarization of polarisation of light, light path and intensity and the phase retardation attribute that gathers pupil plane by being controlled at.
14. a system that is used for the mask assessment, this system comprises:
Storage unit, the information that is suitable for storing the multiple image that represents mask, and
Processor is couple to described storage unit, and described processor is suitable for:
Receive the information of the described multiple image of expression, wherein obtaining described multiple image during the imaging process and under different polarization conditions; And
Produce the output aerial image by processing described multiple image with the difference that compensates between described imaging process and the exposure technology,
Wherein the image of described mask projects on the wafer during described exposure technology, and the described multiple image of described processing comprises:
The specific polarization component of image is decomposed into its spectral components;
Use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask; And
Analyze described output aerial image to estimate the critical dimension of mask feature.
15. system according to claim 14 is characterized in that, described difference comprises the difference between the polarization association attributes of described exposure technology and described imaging process.
16. system according to claim 15 is characterized in that, the described polarization association attributes of described exposure technology represents the polarization relevant contrast of described exposure technology.
17. system according to claim 14 is characterized in that, described processor is suitable for using described correction function at single spectral components.
18. system according to claim 14 is characterized in that, described processor is suitable for producing the output aerial image by the p-polarized component of processing at least one described multiple image.
19. system according to claim 14 comprises the Multiple detection passage, each sense channel is characterised in that polarisation of light and the determined different polarization attribute of intensity that gathers on the pupil plane by being controlled at.
20. system according to claim 14 is suitable for obtaining described multiple image when the polarisation of light by being controlled at the illumination iris face and intensity change the polarization properties of illumination passage.
21. system according to claim 14 is suitable for changing by the polarisation of light that is controlled at pupil plane and intensity the polarization properties of sense channel and illumination passage.
22. system according to claim 14 is characterized in that, described processor is suitable for estimating the critical dimension of the feature of the wafer made by described exposure technology.
23. system according to claim 14 is characterized in that, described processor is suitable for assessing the process window of described exposure technology.
24. system according to claim 14 is characterized in that, described difference comprises the difference between the phase retardation attribute of described exposure technology and described imaging process.
25. system according to claim 14 comprises the Multiple detection passage, each this sense channel is characterised in that the determined different polarization of polarisation of light, light path and intensity and the phase retardation attribute that gathers pupil plane by being controlled at.
26. a method that is used for aerial imagery, the method comprises:
During imaging process, the intensity of controlling multiple light and polarization are to be limited to the basic mask lighting condition identical with the lighting condition of mask during exposure technology; Wherein the image of described mask projects on the wafer during described exposure technology; And
Obtain the image of described mask and process the gained image with the difference of compensation between described imaging process and described exposure technology,
Wherein said processing gained image comprises: the specific polarization component of image is decomposed into its spectral components; And use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask.
27. a system that is used for aerial imagery comprises:
Imaging system is being suitable for using intensity that imaging process controls multiple light simultaneously and polarization to limit the basic mask lighting condition identical with the lighting condition of mask during exposure technology during the imaging process; Wherein the image of described mask projects on the wafer during described exposure technology;
Sensor is suitable for obtaining the image of described mask; And
Processor, be suitable for processing the image that obtains compensating difference between described imaging process and the described exposure technology,
Wherein said processing gained image comprises that the specific polarization component with image is decomposed into its spectral components, and use correction function compensating the difference between described imaging process and the exposure technology at least one spectral components, wherein said correction function responds at least a polarization association attributes and is at least a in the following correction function: and the correction function of the angle between the light of square correction function that is inversely proportional to of the spectral frequency of single spectral components and the response image that is used to form described mask.
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| US82105606P | 2006-08-01 | 2006-08-01 | |
| US60/821,056 | 2006-08-01 |
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| JP (1) | JP5308639B2 (en) |
| KR (1) | KR101235171B1 (en) |
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| CN102253595B (en) * | 2010-05-20 | 2013-04-10 | 北大方正集团有限公司 | Method for searching defective mask plate |
| KR20150099853A (en) * | 2012-12-27 | 2015-09-01 | 가부시키가이샤 니콘 | Inspection apparatus, inspection method, exposure system, exposure method, and device manufacturing method |
| TWI630453B (en) * | 2017-11-22 | 2018-07-21 | 牧德科技股份有限公司 | Projection-type recheck machine and compensation method thereof |
| CN117055307B (en) * | 2023-10-11 | 2023-12-15 | 光科芯图(北京)科技有限公司 | Data processing method and device applied to mask imaging and exposure equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1401994A (en) * | 2001-08-20 | 2003-03-12 | 保谷株式会社 | Gray tone mask defect detecting method and defect detecting device |
| US6657736B1 (en) * | 1999-07-09 | 2003-12-02 | Nova Measuring Instruments Ltd. | Method and system for measuring patterned structures |
| US20040140418A1 (en) * | 2002-06-07 | 2004-07-22 | Jun Ye | System and method for lithography process monitoring and control |
| JP2005354073A (en) * | 2004-06-10 | 2005-12-22 | Asml Netherlands Bv | Level sensor for lithographic device |
| US20060066843A1 (en) * | 2004-09-27 | 2006-03-30 | Avishay Guetta | Optical inspection with alternating configurations |
| CN1846170A (en) * | 2003-07-03 | 2006-10-11 | 恪纳腾技术公司 | Methods and systems for inspection of wafers and reticles using designer intent data |
| US20070058164A1 (en) * | 2005-09-09 | 2007-03-15 | Yukihiro Shibata | Method and apparatus for detecting defects |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60220940A (en) * | 1983-05-20 | 1985-11-05 | Hitachi Ltd | Automatic examining unit for foreign object |
| JP3998334B2 (en) | 1997-09-22 | 2007-10-24 | 株式会社東芝 | Defect inspection method |
| JP2000206329A (en) * | 1999-01-12 | 2000-07-28 | Toshiba Corp | Phase measuring method and its device |
| JP2004061915A (en) * | 2002-07-30 | 2004-02-26 | Nikon Corp | Method for inspection mask and aligner |
| JP2005026527A (en) * | 2003-07-03 | 2005-01-27 | Sony Corp | Method of exposure and method of manufacturing semiconductor device |
| KR101248674B1 (en) | 2004-06-16 | 2013-03-28 | 가부시키가이샤 니콘 | Surface inspecting device and surface inspecting method |
-
2007
- 2007-08-01 CN CN2007101428793A patent/CN101451963B/en not_active Expired - Fee Related
- 2007-08-01 KR KR1020070077450A patent/KR101235171B1/en not_active IP Right Cessation
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657736B1 (en) * | 1999-07-09 | 2003-12-02 | Nova Measuring Instruments Ltd. | Method and system for measuring patterned structures |
| CN1401994A (en) * | 2001-08-20 | 2003-03-12 | 保谷株式会社 | Gray tone mask defect detecting method and defect detecting device |
| US20040140418A1 (en) * | 2002-06-07 | 2004-07-22 | Jun Ye | System and method for lithography process monitoring and control |
| CN1846170A (en) * | 2003-07-03 | 2006-10-11 | 恪纳腾技术公司 | Methods and systems for inspection of wafers and reticles using designer intent data |
| JP2005354073A (en) * | 2004-06-10 | 2005-12-22 | Asml Netherlands Bv | Level sensor for lithographic device |
| US20060066843A1 (en) * | 2004-09-27 | 2006-03-30 | Avishay Guetta | Optical inspection with alternating configurations |
| US20070058164A1 (en) * | 2005-09-09 | 2007-03-15 | Yukihiro Shibata | Method and apparatus for detecting defects |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2005354073A 2005.12.22 |
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| CN101451963A (en) | 2009-06-10 |
| KR101235171B1 (en) | 2013-02-20 |
| KR20080012232A (en) | 2008-02-11 |
| JP5308639B2 (en) | 2013-10-09 |
| JP2008116909A (en) | 2008-05-22 |
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