CN101592870B - Monitoring method of lithography equipment focus - Google Patents
Monitoring method of lithography equipment focus Download PDFInfo
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- CN101592870B CN101592870B CN2008101139980A CN200810113998A CN101592870B CN 101592870 B CN101592870 B CN 101592870B CN 2008101139980 A CN2008101139980 A CN 2008101139980A CN 200810113998 A CN200810113998 A CN 200810113998A CN 101592870 B CN101592870 B CN 101592870B
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Abstract
A monitoring method of exposure equipment focus comprises the followings: providing a mask plate with a test pattern and a substrate with a photoresist layer; by the exposure equipment, using the mask plate to carry out exposure process on the photoresist layer, forming the test pattern in the photoresist layer; measuring the spectrogram of the test pattern in the photoresist layer; according to a mapping relation between the focus of the exposure equipment and the spectrogram of the test pattern formed by exposure of the focus, obtaining the exposed focus corresponding to the spectrogram of the test pattern in the photoresist layer. The method of the invention has comparatively high precision.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the monitoring method of lithography equipment focus in particularly a kind of photoetching process.
Background technology
In the SIC (semiconductor integrated circuit) manufacturing process, the territory pattern on the mask plate is transferred in the photoresist layer of Semiconductor substrate, formed the photoresist pattern through the exposure sources (ExposureEquipment) of photoetching process; Then, as mask layer, Semiconductor substrate is carried out follow-up etching or ion implantation technology with this photoresist pattern.
In photoetching process, the live width of photoresist pattern and side wall profile can receive the influence that exposure sources focuses on situation.And the live width of photoresist pattern and profile can directly influence follow-up etching or ion implantation technology, thereby the monitoring that exposure sources focuses on situation (is called the focal length monitoring, FocusMonitor) seems particularly important.
Exposure sources is when work; The light that exposure light source sends is projeced on the mask plate with semiconductor device one deck territory pattern through behind the collimation; The light that passes this mask plate carries the information of territory pattern; Through imaging system, be incident upon on the photoresist layer of Semiconductor substrate, make photoresist layer sensitization.
At publication number is in the one Chinese patent application file of CN 1459670A, discloses a kind of focal distance monitoring method.Fig. 1 to Fig. 3 is the synoptic diagram relevant with the monitoring method of described application documents.Described application documents disclosed method step is following:
At first, on mask plate 20, make test pattern 20a or 20b shown in Fig. 1 or 2, wherein, described test pattern 20a is a plurality of lines that the cardinal principle parallel longitudinal is arranged, and described lines have identical live width (Line width) and line-spacing (space).
Then, a substrate is provided, spin coating one photoresist layer in said substrate.
Then, under the different focal length condition, test pattern 20a on the mask plate 20 or 20b are transferred to the zones of different of the photoresist layer 302 of substrate along surface direction through exposure technology and developing process.As shown in Figure 3, through described exposure and developing process, form test pattern in A1 to the A9 zone of the photoresist layer 302 of substrate respectively with the focal length of fr1, fr2, fr3......fr9.Described focal distance f r1, fr2, fr3......fr9 can be arithmetic progression.Because the test pattern of zones of different is under the different focal length condition, to form, thereby each regional test pattern possibly cause live width or profile variations because of focal length variations.
Follow again, measure the live width of the test pattern in A1 to A9 zone respectively, confirm the receivable scope of its corresponding focal length according to the scope that the live width of this resolution chart can receive through measuring equipment (being generally scanning electron microscope SEM).For example, when focal distance f r3 to fr7, the line width variation of resolution chart is less, but within range of receiving, but then the range of receiving of focal length is fr3 to fr7, further, is half of fr3 and fr7 sum with the focal length setting value of exposure sources.
Yet; The method precision of described test exposure device focus is generally about 0.05 to 1 micron, and is more coarse, along with the continuous development of semiconductor fabrication process to little live width direction; Press for the existing processes monitoring method is improved, improve the precision of monitoring.
Summary of the invention
The present invention provides a kind of monitoring method of lithography equipment focus, to solve the existing lower problem of monitoring method precision.
The monitoring method of a kind of exposure equipment focal distance provided by the invention comprises:
Mask plate with resolution chart and the substrate with photoresist layer are provided;
Through described exposure sources, utilize said mask plate that said photoresist layer is carried out exposure technology, in said photoresist layer, form test pattern;
Measure the spectrogram of the test pattern in the said photoresist layer;
According to the different focal of exposure sources and utilize the mapping relations between the spectrogram of the test pattern that this different focal exposure forms, the spectrogram that obtains the test pattern in the said photoresist layer focal length that makes public accordingly.
Optional, the step of setting up described mapping relations is following:
Mask plate is provided, on said mask plate, has resolution chart;
At least one Semiconductor substrate is provided, on said Semiconductor substrate, forms photoresist layer;
For described resolution chart, utilize the different focal of said exposure sources, in said photoresist layer, form different test patterns;
Measure the spectrogram of each test pattern;
Set up the mapping relations between the focal length of each spectrogram test pattern corresponding with it.
Optional, further comprise: form the mapping relations database according to described mapping relations.
Optional, said test pattern is formed in the photoresist layer of different Semiconductor substrate or with the photoresist layer of the semi-conductive substrate zones of different along surface direction.
Optional, further comprise: set up the mapping relations database between the spectrogram of side wall profile sectional view and this test pattern of each test pattern.
Optional, further comprise: will measure the side wall profile sectional view of the spectrogram input test pattern that obtains and the mapping relations database between its spectrogram, and obtain the side wall profile of this test pattern.
Optional, utilize ellipsometry to measure the spectrogram of test pattern.
Optional, further comprise: the live width of measuring each test pattern; Set up the mapping relations database between the live width of each spectrogram test pattern corresponding with it;
And in said photoresist layer, form after the step of test pattern, measure the live width of said test pattern;
The live width of the said test pattern of match and the funtcional relationship of focal length;
The focal length of correspondence when calculating the live width maximal value according to said funtcional relationship.
Optional, saidly fit to quadratic fit.
Compared with prior art, the present invention has the following advantages:
The profile varying of the pattern that the focal length that this method is utilized exposure sources forms the back of making public and then cause this principle of variation of the spectrogram of this pattern; At first set up the database of the spectrogram of pattern under the different focal length, and set up the database of mapping relations of its corresponding focal length of spectrogram of pattern under the different focal; When needing the focal length of measuring exposed equipment, the mask plate with resolution chart is provided, utilize exposure sources to be tested, with the photoresist layer of the figure transfer on the described mask plate, form test pattern to Semiconductor substrate; Then, measure the spectrogram of described test pattern, obtain the corresponding focal length of this spectrogram according to described mapping relations database.Thus, can know the focal length of this exposure sources.This method is comparatively simple, and measuring accuracy is high, and can not take exposure sources and long time of measuring equipment on the production line;
Further, according to the side wall profile sectional view of test pattern and the mapping relations database between the spectrogram, can also obtain the side wall profile of this test pattern, whether the side wall profile of the test pattern that forms in the time of can checking this focal length intuitively meets the demands.
Description of drawings
Fig. 1 to Fig. 3 is and the relevant synoptic diagram of existing a kind of monitoring method;
Fig. 4 is the process flow diagram of embodiment of the monitoring method of exposure equipment focal distance of the present invention;
Fig. 5 a, Fig. 5 b, Fig. 5 c and Fig. 5 d are respectively the synoptic diagram of monitoring figure of the present invention;
Fig. 6 is the vertical view of Semiconductor substrate of the embodiment of method of the present invention;
Fig. 7 is the diagrammatic cross-section of wherein a kind of test pattern of the embodiment of method of the present invention;
The synoptic diagram of the spectrogram of the test pattern of ellipsometry survey sheet 7 in Fig. 8 method of the present invention.
Embodiment
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
In the manufacturing process of SIC (semiconductor integrated circuit); The focal length of exposure sources is unusual important technical parameters; Live width size and consistance, side wall profile and the pattern of the pattern that photoetching process forms are all relevant with it with the alignment precision of lower pattern; Thereby the focal length of monitoring exposure sources seems very important with the stability of the focal plane of judging exposure sources.
The present invention provides a kind of monitoring method of exposure equipment focal distance; The profile varying of the pattern that the focal length that this method is utilized exposure sources forms the back of making public and then cause this principle of variation of the spectrogram of this pattern; At first set up the database of the spectrogram of pattern under the different focal length, and set up the database of mapping relations of its corresponding focal length of spectrogram of pattern under the different focal; When needing the focal length of measuring exposed equipment, the mask plate with resolution chart is provided, utilize exposure sources to be tested, with the photoresist layer of the figure transfer on the described mask plate, form test pattern to Semiconductor substrate; Then, measure the spectrogram of described test pattern, obtain the corresponding focal length of this spectrogram according to described mapping relations database.Thus, can know the focal length of this exposure sources.This method is comparatively simple, and measuring accuracy is high, and can not take exposure sources and long time of measuring equipment on the production line.
Fig. 4 is the process flow diagram of embodiment of the monitoring method of exposure equipment focal distance of the present invention.
Please refer to Fig. 4, step S110 provides mask plate with resolution chart and the substrate with photoresist layer;
Step S120 is through described exposure sources, utilizes said mask plate that said photoresist layer is carried out exposure technology, in said photoresist layer, forms test pattern;
Step S130 is for measuring the spectrogram of the test pattern in the said photoresist layer;
Step S140 is for according to the focal length of exposure sources and utilize the mapping relations between the spectrogram of the test pattern that this focal length exposure forms, the spectrogram that obtains the test pattern in the said photoresist layer focal length that makes public accordingly.
Below in conjunction with accompanying drawing described monitoring method is described in detail.
When utilizing monitoring method of the present invention that exposure equipment focal distance is monitored; Mapping relations between the spectrogram of the pattern that forms or database need be utilized under exposure equipment focal distance and this focal length, corresponding focal length could be obtained according to the mapping relations in this database with these mapping relations.
Among the embodiment therein, the step of setting up described mapping relations database is following:
At first, mask plate is provided, on said mask plate, has different resolution charts.Said resolution chart can be bargraphs or opening figure, and said opening can be hole or groove.Shown in Fig. 5 a, 5b, 5c and 5d, wherein, Fig. 5 a and Fig. 5 b are the synoptic diagram of the bargraphs on the mask plate, and Fig. 5 c and 5d are hole or the synoptic diagram of groove figure on the mask plate.Need to prove; This mask plate can be binary mask plate (Binary mask), also can be phase shifting mask plate (Phaseshift mask), and the live width of described resolution chart can be set according to the exposure sources that will monitor; For example; For the exposure sources of the exposure light source with 248nm, when the mapping relations of setting up based on the spectrum of the pattern of the focal length of this exposure sources and its formation, the target live width of resolution chart can be arranged at 0.18nm.But the live width of described resolution chart is greater than the resolution characteristic of described exposure sources.
Semi-conductive substrate is provided, and this Semiconductor substrate is nude film (bare wafer); Preferably ultra flat nude film (ultra-flat wafer), the semiconductor substrate surface flatness is high, can reduce because the spectrum influence to the photoresist pattern on it that the flatness of this semiconductor substrate surface causes improves the precision to the exposure equipment focal distance monitoring.
On described Semiconductor substrate, form photoresist layer.Said photoresist layer can be that positive photoresist also can be a negative photoresist.In the present embodiment, said photoresist is an eurymeric.
Wherein, the step of formation photoresist can be following on Semiconductor substrate:
At first; Said Semiconductor substrate is cleaned and dewatered; Then under certain temperature (for example, can be 110 ℃ or higher temperature) to said semiconductor substrate surface apply the adhesive hexamethyldisilazane (Hexa methy ldisilazane, HMDS); Said HMDS is used to change the hydrophilic or hydrophobic state of said semiconductor substrate surface, with the photoresist that increases follow-up spin coating and the adhesiveness of said semiconductor substrate surface;
Then, said Semiconductor substrate is cooled to room temperature (for example about 23 ℃), described process for cooling can carry out on the cold drawing (Cooling plate) of spin-coating equipment;
Then, this Semiconductor substrate is placed on the brace table (Wafer Chuck) of spin coating chamber, this brace table surface has vacuum cup, adsorbs said Semiconductor substrate through vacuum cup;
With surfactant (Resist Reduction Consumption, nozzle RRC) (Nozzle) moves to the central top position of said Semiconductor substrate, to said semiconductor substrate surface ejection RRC;
Rotate said brace table, drive said Semiconductor substrate with slower speed rotation, so that said RRC can outwards flow along semiconductor substrate surface; Then; Stop to spray RRC; The said Semiconductor substrate of rotation is continued in the central top position of Semiconductor substrate shown in the photoresist nozzle moved to, and ejection photoresist; Photoresist surface along said surfactant R RC under action of centrifugal force is spread out, and be covered with the surface of whole Semiconductor substrate.
Through adjusting the speed of rotation of said Semiconductor substrate, can form certain thickness and thickness evenness photoresist layer preferably at said semiconductor substrate surface; Wherein, RRC can reduce the resistance of photoresist when semiconductor substrate surface flows, and helps to reduce the consumption of photoresist.
After accomplishing the spin coating photoresist layer, said Semiconductor substrate with photoresist layer is carried out soft examining (Soft Bake) technology, examine the solvent of removing in the said photoresist layer through soft, and increase the adhesiveness of said photoresist layer at said semiconductor substrate surface.
Form after the described photoresist layer, described Semiconductor substrate is placed on the substrate supports platform (Wafer stage) of exposure sources, the mask plate that will have resolution chart simultaneously places on the mask plate bracing frame of this exposure sources (Reticle Stage);
Through the alignment mark on alignment mark on the described mask plate (Alignment mark) and the Semiconductor substrate said mask plate and Semiconductor substrate are aimed at; Open exposure light source, said exposure light source makes public to photoresist layer on the said Semiconductor substrate after seeing through optical system and mask plate, with the figure transfer in the mask plate in said photoresist layer.
Wherein, said exposure sources can be step printing equipment (stepper) or scanning type exposure equipment (Scanner).In the step printing equipment, the figure on the mask plate is transferred on the photoresist layer of Semiconductor substrate fully, and through moving said Semiconductor substrate, the photoresist layer of the diverse location of Semiconductor substrate is made public by certain step-length through single exposure.
In the scanning type exposure equipment; The size of the light beam in the optical system need move mask plate in a certain direction (being called the Y direction) less than the size of mask plate, makes the inswept whole mask plate of light beam; And project on the photoresist of Semiconductor substrate; Simultaneously, Semiconductor substrate need move with the opposite direction of certain speed edge with the mask plate moving direction, could be with the figure transfer of whole mask plate to the photoresist of Semiconductor substrate.
With the scanning type exposure is example, behind the completion single pass, on the photoresist of Semiconductor substrate, forms the pattern (be called a Shot or Field) corresponding with whole mask plate figure; Then the photoresist layer to other position of Semiconductor substrate carries out scanning type exposure, forms a plurality of Shot.Synoptic diagram as shown in Figure 6 in the photoresist layer of Semiconductor substrate 1, forms a plurality of Shot2, and the pattern of each Shot2 is all corresponding to the resolution chart of whole mask plate.
When exposure, can when forming each shot, set different focal length; Because the focal length of exposure sources can influence the live width and the side wall profile of the pattern of formation, thereby, under the different focal condition,, in different shot, can form different test patterns for same resolution chart.In a further embodiment; A plurality of Semiconductor substrate with photoresist layer can be provided; When forming test pattern in the photoresist layer on different Semiconductor substrate; Different focal length is set, and, identical focal length is set with the photoresist layer of semi-conductive substrate zones of different along surface direction.Here repeat no more.
After in the photoresist layer of Semiconductor substrate, forming test pattern, said Semiconductor substrate is carried out postexposure bake (Post Exposure Bake, PEB) technology.Through PEB, the standing wave effect (mainly for the I-Line photoresist) when eliminating exposure on the one hand; Cause on the other hand, quicken the catalytic reaction (mainly for chemically-amplified resist) of light acid, make the photoresist that is made public generate the material that dissolves in developer solution.
After accomplishing PEB, said photoresist layer is developed,, remove, wash with deionized water then by the photoresist of exposed areas for the eurymeric photoresist with developer solution.
After development and the flushing, said Semiconductor substrate is carried out hard roasting (Hard Bake) technology, with the adhesiveness of raising test pattern to Semiconductor substrate.
After in the photoresist layer of Semiconductor substrate, forming test pattern, measure the spectrogram of each resolution chart.
Among the embodiment therein; The method of measuring said spectrogram is an ellipsometry; Its cardinal principle is following: please refer to Fig. 7; With the bar pattern shape on the mask plate is example, through behind exposure and the developing process, and formation test pattern 3 (sectional view the when test pattern 3 of Fig. 7 only demonstrates a certain focal length wherein) on Semiconductor substrate 1.
Then, as shown in Figure 8, with elliptically polarized light 4 with respect to Semiconductor substrate 1 certain angle of inclination oblique fire of surface in the surface of said Semiconductor substrate 1, through described Semiconductor substrate 1 surface back generation reflected light; Because the test pattern 3 on Semiconductor substrate 1 surface makes reflected light produce phase differential, after overlapping, described reflected light with phase differential can produce interference effect, generate spectrogram.Because the distance of live width, side wall profile and the adjacent test pattern of test pattern is different; Can produce different spectrum figure; And because the focal length of exposure sources is different; Can cause forming the test pattern of different live widths and side wall profile, thereby, correlativity had through test pattern between test pattern and the exposure sources.
Further, can measure the live width of each test pattern, and the live width of each test pattern is corresponding one by one with the spectrogram of this test pattern, set up the mapping relations database between live width and the spectrogram.
In addition, can also set up the side wall profile sectional view of test pattern and the mapping relations database between the spectrogram, repeat no more here.
Set up after the mapping relations database between focal length and the spectrogram, can use the focal length of this database monitor exposure sources, step is following:
At first, mask plate with resolution chart and the substrate with photoresist layer are provided; Then, through exposure sources to be monitored, utilize said mask plate that said photoresist layer is carried out exposure technology, in said photoresist layer, form test pattern; Then, measure the spectrogram of the test pattern in the said photoresist layer; With spectrogram that obtains and the comparison of the spectrogram in the described mapping relations database, find out the highest spectrogram of same or similar degree, the focal length that this spectrogram is corresponding is the focal length of described exposure sources.Thus, can know the focal length of this exposure sources.This method is comparatively simple, and measuring accuracy is less than 0.05um, and precision is high, and can not take exposure sources and long time of measuring equipment on the production line.Further, according to the side wall profile sectional view of test pattern and the mapping relations database between the spectrogram, can also obtain the side wall profile of this test pattern, whether the side wall profile of the test pattern that forms in the time of can checking this focal length intuitively meets the demands.
Mapping relations database between described focal length and the spectrogram only need be set up once; After the foundation, can be used for the focal length of periodic measuring exposed equipment, use the exposure sources that this method is periodically monitored production line; Precision is higher, and is shorter with respect to the existing method time spent.
In a further embodiment; After obtaining the corresponding monitoring pattern of different exposure focal lengths, measure the spectrogram of each test pattern, according to the mapping relations database between live width and the spectrogram; Obtain the live width of each test pattern, the live width of the said test pattern of match and the funtcional relationship of focal length; The focal length of correspondence when calculating the live width maximal value according to said funtcional relationship.Wherein, describedly fit to quadratic fit.The method of this enforcement needn't be measured live width through scanning electron microscope, can save the time of electron scanning electron microscope, and measuring accuracy is higher.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (8)
1. the monitoring method of an exposure equipment focal distance is characterized in that, comprising:
Mask plate is provided, on said mask plate, has resolution chart;
At least one Semiconductor substrate is provided, on said Semiconductor substrate, forms photoresist layer;
For described resolution chart, utilize the different focal of said exposure sources, in said photoresist layer, form different test patterns;
Measure the spectrogram of each test pattern;
Set up the mapping relations between the focal length of each spectrogram test pattern corresponding with it;
Mask plate with resolution chart and the substrate with photoresist layer are provided;
Through described exposure sources, utilize said mask plate that said photoresist layer is carried out exposure technology, in said photoresist layer, form test pattern;
Measure the spectrogram of the test pattern in the said photoresist layer;
According to the different focal of exposure sources and utilize the mapping relations between the spectrogram of the test pattern that this different focal exposure forms, the spectrogram that obtains the test pattern in the said photoresist layer focal length that makes public accordingly.
2. the monitoring method of exposure equipment focal distance as claimed in claim 1 is characterized in that, further comprises: form the mapping relations database according to described mapping relations.
3. the monitoring method of exposure equipment focal distance as claimed in claim 1 is characterized in that: said test pattern is formed in the photoresist layer of different Semiconductor substrate or with the photoresist layer of the semi-conductive substrate zones of different along surface direction.
4. the monitoring method of exposure equipment focal distance as claimed in claim 1 is characterized in that, further comprises: set up the mapping relations database between the spectrogram of side wall profile sectional view and this test pattern of each test pattern.
5. the monitoring method of exposure equipment focal distance as claimed in claim 4; It is characterized in that; Further comprise: will measure the side wall profile sectional view of the spectrogram input test pattern that obtains and the mapping relations database between its spectrogram, and obtain the side wall profile of this test pattern.
6. like the monitoring method of the described exposure equipment focal distance of the arbitrary claim of claim 1 to 5, it is characterized in that: utilize ellipsometry to measure the spectrogram of test pattern.
7. the monitoring method of exposure equipment focal distance as claimed in claim 1 is characterized in that, further comprises: the live width of measuring each test pattern; Set up the mapping relations database between the live width of each spectrogram test pattern corresponding with it;
And in said photoresist layer, form after the step of test pattern, measure the live width of said test pattern;
The live width of the said test pattern of match and the funtcional relationship of focal length;
The focal length of correspondence when calculating the live width maximal value according to said funtcional relationship.
8. the monitoring method of exposure equipment focal distance as claimed in claim 7 is characterized in that: saidly fit to quadratic fit.
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| CN2008101139980A CN101592870B (en) | 2008-05-30 | 2008-05-30 | Monitoring method of lithography equipment focus |
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| CN2008101139980A CN101592870B (en) | 2008-05-30 | 2008-05-30 | Monitoring method of lithography equipment focus |
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| CN102375330A (en) * | 2010-08-19 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Method and device for determining optimum focus of exposure equipment |
| CN113917799B (en) * | 2021-09-28 | 2023-11-10 | 上海华力集成电路制造有限公司 | Method for improving exposure focal length uniformity |
Citations (4)
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|---|---|---|---|---|
| US5926690A (en) * | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
| CN1851556A (en) * | 2005-04-22 | 2006-10-25 | 上海集成电路研发中心有限公司 | Adjusting method for long mask exposure focusing plane correction |
| CN1881087A (en) * | 2005-06-17 | 2006-12-20 | 台湾积体电路制造股份有限公司 | Mask CD correction based on global pattern density |
| CN101114130A (en) * | 2006-07-27 | 2008-01-30 | Asml荷兰有限公司 | System and method to compensate for critical dimension non-uniformity in a lithography system |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5926690A (en) * | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
| CN1851556A (en) * | 2005-04-22 | 2006-10-25 | 上海集成电路研发中心有限公司 | Adjusting method for long mask exposure focusing plane correction |
| CN1881087A (en) * | 2005-06-17 | 2006-12-20 | 台湾积体电路制造股份有限公司 | Mask CD correction based on global pattern density |
| CN101114130A (en) * | 2006-07-27 | 2008-01-30 | Asml荷兰有限公司 | System and method to compensate for critical dimension non-uniformity in a lithography system |
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