CN101651181A - 发光二极管 - Google Patents
发光二极管 Download PDFInfo
- Publication number
- CN101651181A CN101651181A CN200910138955A CN200910138955A CN101651181A CN 101651181 A CN101651181 A CN 101651181A CN 200910138955 A CN200910138955 A CN 200910138955A CN 200910138955 A CN200910138955 A CN 200910138955A CN 101651181 A CN101651181 A CN 101651181A
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- CN
- China
- Prior art keywords
- emitting diode
- light
- substrate
- layer
- depressed area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8789708P | 2008-08-11 | 2008-08-11 | |
US61/087,897 | 2008-08-11 | ||
US12/247,895 | 2008-10-08 | ||
US12/247,895 US8134163B2 (en) | 2008-08-11 | 2008-10-08 | Light-emitting diodes on concave texture substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101651181A true CN101651181A (zh) | 2010-02-17 |
CN101651181B CN101651181B (zh) | 2011-06-15 |
Family
ID=41652064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101389552A Active CN101651181B (zh) | 2008-08-11 | 2009-05-21 | 发光二极管 |
Country Status (3)
Country | Link |
---|---|
US (3) | US8134163B2 (zh) |
CN (1) | CN101651181B (zh) |
TW (1) | TWI484657B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347416A (zh) * | 2010-08-02 | 2012-02-08 | 亚威朗光电(中国)有限公司 | 发光二极管 |
CN103515493A (zh) * | 2012-06-19 | 2014-01-15 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
TWI456753B (zh) * | 2010-12-09 | 2014-10-11 | Ind Tech Res Inst | 氮化物半導體模板及其製造方法 |
CN106463346A (zh) * | 2014-06-09 | 2017-02-22 | 塞伦光子学有限公司 | 半极性晶体结构的制造 |
WO2022104595A1 (zh) * | 2020-11-18 | 2022-05-27 | 苏州晶湛半导体有限公司 | 发光器件及其制备方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8134163B2 (en) | 2008-08-11 | 2012-03-13 | Taiwan Semiconductor Manfacturing Co., Ltd. | Light-emitting diodes on concave texture substrate |
US8859305B2 (en) * | 2010-02-10 | 2014-10-14 | Macron Technology, Inc. | Light emitting diodes and associated methods of manufacturing |
US8299479B2 (en) * | 2010-03-09 | 2012-10-30 | Tsmc Solid State Lighting Ltd. | Light-emitting devices with textured active layer |
US8390010B2 (en) | 2010-03-25 | 2013-03-05 | Micron Technology, Inc. | Solid state lighting devices with cellular arrays and associated methods of manufacturing |
US8803185B2 (en) * | 2012-02-21 | 2014-08-12 | Peiching Ling | Light emitting diode package and method of fabricating the same |
US20150340557A1 (en) * | 2013-01-08 | 2015-11-26 | Koninklijke Philips N.V. | Shaped led for enhanced light extraction efficiency |
US9970126B2 (en) | 2013-02-26 | 2018-05-15 | Massachusetts Institute Of Technology | Production of free-standing crystalline material layers |
US9892944B2 (en) | 2016-06-23 | 2018-02-13 | Sharp Kabushiki Kaisha | Diodes offering asymmetric stability during fluidic assembly |
US9755110B1 (en) | 2016-07-27 | 2017-09-05 | Sharp Laboratories Of America, Inc. | Substrate with topological features for steering fluidic assembly LED disks |
US9722145B2 (en) | 2015-06-24 | 2017-08-01 | Sharp Laboratories Of America, Inc. | Light emitting device and fluidic manufacture thereof |
US9917226B1 (en) | 2016-09-15 | 2018-03-13 | Sharp Kabushiki Kaisha | Substrate features for enhanced fluidic assembly of electronic devices |
US9985190B2 (en) | 2016-05-18 | 2018-05-29 | eLux Inc. | Formation and structure of post enhanced diodes for orientation control |
US10249599B2 (en) | 2016-06-29 | 2019-04-02 | eLux, Inc. | Laminated printed color conversion phosphor sheets |
US9627437B1 (en) | 2016-06-30 | 2017-04-18 | Sharp Laboratories Of America, Inc. | Patterned phosphors in through hole via (THV) glass |
US10243097B2 (en) | 2016-09-09 | 2019-03-26 | eLux Inc. | Fluidic assembly using tunable suspension flow |
US9837390B1 (en) | 2016-11-07 | 2017-12-05 | Corning Incorporated | Systems and methods for creating fluidic assembly structures on a substrate |
US10062674B1 (en) * | 2017-04-28 | 2018-08-28 | Corning Incorporated | Systems and methods for display formation using photo-machinable material substrate layers |
US10389090B2 (en) * | 2017-11-21 | 2019-08-20 | International Business Machines Corporation | Lateral growth of edge-emitting lasers |
US11715753B2 (en) * | 2020-12-30 | 2023-08-01 | Applied Materials, Inc. | Methods for integration of light emitting diodes and image sensors |
US11811000B2 (en) * | 2020-12-30 | 2023-11-07 | Applied Materials, Inc. | Methods for forming light emitting diodes |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2130221C1 (ru) * | 1996-04-23 | 1999-05-10 | Акционерное общество закрытого типа "Энергомаштехника" | Матрица лазерных диодов |
JPH10223368A (ja) * | 1997-01-31 | 1998-08-21 | Hokuriku Electric Ind Co Ltd | 有機el素子とその製造方法 |
KR100277940B1 (ko) * | 1998-07-14 | 2001-02-01 | 구자홍 | 지에이엔(gan) 반도체 레이저 다이오드 및 그 제조방법 |
JP3416083B2 (ja) * | 1999-08-31 | 2003-06-16 | 株式会社日立製作所 | 半導体装置 |
JP4651161B2 (ja) * | 2000-07-03 | 2011-03-16 | 宣彦 澤木 | 半導体素子およびその製造方法 |
US6635901B2 (en) * | 2000-12-15 | 2003-10-21 | Nobuhiko Sawaki | Semiconductor device including an InGaAIN layer |
US20020153529A1 (en) * | 2001-04-24 | 2002-10-24 | Jin-Shown Shie | LED array with optical isolation structure and method of manufacturing the same |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
JP4307113B2 (ja) * | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
KR20050071238A (ko) | 2003-12-31 | 2005-07-07 | 엘지전자 주식회사 | 고휘도 발광 소자 및 그 제조 방법 |
TWI533459B (zh) * | 2005-06-02 | 2016-05-11 | 美國伊利諾大學理事會 | 可印刷半導體結構及製造和組合之相關方法 |
KR100649769B1 (ko) * | 2005-12-28 | 2006-11-27 | 삼성전기주식회사 | 반도체 발광 다이오드 및 그 제조 방법 |
US7956370B2 (en) * | 2007-06-12 | 2011-06-07 | Siphoton, Inc. | Silicon based solid state lighting |
US20090032799A1 (en) * | 2007-06-12 | 2009-02-05 | Siphoton, Inc | Light emitting device |
US8134163B2 (en) | 2008-08-11 | 2012-03-13 | Taiwan Semiconductor Manfacturing Co., Ltd. | Light-emitting diodes on concave texture substrate |
-
2008
- 2008-10-08 US US12/247,895 patent/US8134163B2/en active Active
-
2009
- 2009-05-08 TW TW098115303A patent/TWI484657B/zh active
- 2009-05-21 CN CN2009101389552A patent/CN101651181B/zh active Active
-
2012
- 2012-01-25 US US13/358,327 patent/US8629465B2/en active Active
-
2013
- 2013-11-27 US US14/091,843 patent/US9373755B2/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347416A (zh) * | 2010-08-02 | 2012-02-08 | 亚威朗光电(中国)有限公司 | 发光二极管 |
TWI456753B (zh) * | 2010-12-09 | 2014-10-11 | Ind Tech Res Inst | 氮化物半導體模板及其製造方法 |
CN103515493A (zh) * | 2012-06-19 | 2014-01-15 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
CN103515493B (zh) * | 2012-06-19 | 2016-06-08 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
CN106463346A (zh) * | 2014-06-09 | 2017-02-22 | 塞伦光子学有限公司 | 半极性晶体结构的制造 |
US10290497B2 (en) | 2014-06-09 | 2019-05-14 | Seren Photonics Limited | Fabrication of semi-polar crystal structures |
WO2022104595A1 (zh) * | 2020-11-18 | 2022-05-27 | 苏州晶湛半导体有限公司 | 发光器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US9373755B2 (en) | 2016-06-21 |
TWI484657B (zh) | 2015-05-11 |
US20100032700A1 (en) | 2010-02-11 |
US8629465B2 (en) | 2014-01-14 |
US8134163B2 (en) | 2012-03-13 |
CN101651181B (zh) | 2011-06-15 |
US20140087505A1 (en) | 2014-03-27 |
US20120119236A1 (en) | 2012-05-17 |
TW201007987A (en) | 2010-02-16 |
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Effective date of registration: 20160509 Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. Effective date of registration: 20160509 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. |