CN101694636B - Updating backup system and method for data of nonvolatile data memory - Google Patents
Updating backup system and method for data of nonvolatile data memory Download PDFInfo
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Abstract
The invention provides an updating backup system for data of a nonvolatile data memory, relating to the technical field of digital information application. The system comprises a logical addressing space and a physical addressing space, wherein the logical addressing space comprises a plurality of data, and each data corresponds to a data block in the physical addressing space; and the physical addressing space comprises at least two data storage zones and a data effective zone indicating bit, wherein the two data storage zones respectively store a plurality of data blocks which have one-to-one relevance; the data effective zone indicating bit is used for indicating the data storage zone where the current effective data blocks are positioned. The invention also provides an updating backup method for the data of a nonvolatile data memory; by adopting the method and the system of the invention, even if abnormal interruption occurs in chips during the programming of the nonvolatile data memory, the stored data can still be prevented from being damaged, and simultaneously, the safety and the consistency of data updating backup is enhanced effectively.
Description
Technical field
The present invention relates to technical field of digital information application, relate in particular to non-volatile data memory consistance Data Update standby system and method in the chip.
Background technology
Development along with digital information technology; The electronic data storage technology is seen everywhere in life; Non-volatile data memory (EEPROM; FLASH etc.) compare with the conventional data storage medium that comprises the magnetic medium type, have advantages such as high stability, write-protect data and high security, extensively be received to the next generation multimedia information medium.
The one-time programming size of non-volatile data memory support is called piece; The data block size of general non-volatile data memory is generally 1 byte in tens bytes range; After the storage data volume surpasses the size of a piece, just must be divided into several and accomplish programming.
In a lot of chip systems; For example televisor configuration store chip, print cartridge China ink are measured control chip, telepilot storage chip, relate to safe control chip and are related to outage memory function equipment; Like Configuration Control Unit in the equipment such as MP3/MP4/GPS of current popular etc., all adopted the storage of non-volatile data memory as critical data.In said system; Its storage data volume is general all big or small greater than the data block of non-volatile data memory; And these data that need stride the non-volatile data memory data block have certain relevance, when promptly upgrading according to data block, if the only interior Data Update success of the data block of part non-volatile data memory; And the data of other data blocks are not when doing to upgrade, the situation that will exist form or data to make mistakes.These data of striding the non-volatile data memory data block and having certain relevance are referred to as the consistance data.
As to 1024 public key systems, its key is 1024, and this 1024 bit data is exactly the consistance data, if when the key of this system upgraded, its 1024 keys need be regarded an integral body as, are referred to as the backup of consistance Data Update.
The non-volatile data memory that uses at present need carry out the action of erased before writing new data.Therefore, the non-volatile data memory programming was divided into for two steps: the first step, data block to be written is carried out erased, and make it and all be fixed as " 0 " or " 1 "; In second step, data are write in the corresponding data block of non-volatile data memory.Wipe with ablation process all in the magnitude of 1～2ms (millisecond).
Non-volatile data memory only has following three kinds of situation to the operation that writes new data of consistance data: 1, upgrade successfully; 2, upgrade failure, data are not updated; 3, upgrade failure, data are neither upgrade preceding data, also non-expectation data updated.
To given data; User expectation is upgraded successfully or not and is upgraded; And do not expect to occur unexpected data (being the third situation); This is the requirement of non-volatile data memory Data Update in the chip, also is the important assurance that guarantees the chip system operate as normal of embedded such non-volatile data memory.Yet, in the consistance data updating process, because mains fluctuations, outage or other are subjective and objective are easy to cause wiping with ablation process of non-volatile data memory to be ended by accident.This accident termination can cause the renewal operation irregularity of normal data to finish, and makes data modification in the non-volatile data memory become the data of non-expectations of customer, as complete 0, complete 1 or other value.At this moment; Must carry out special processing to the consistance data in the non-volatile data memory; Otherwise when operating once more because of the chip of abnormal ending, follow-up work can't be carried out; Especially when data were significant data such as key data and form control data, once unusual programming just possibly cause this chip permanent failure.
Summary of the invention
In order to overcome the shortcoming of above-mentioned legacy system and method, the purpose of this invention is to provide a kind of non-volatile data memory Data Update standby system and method, it can guarantee that the consistance data security is upgraded in the non-volatile data memory.
For solving the problems of the technologies described above; The present invention provides a kind of non-volatile data memory Data Update standby system; Said system comprises logic addressing space and physical addressing space, and said logic addressing space comprises plurality of data, the data block in the corresponding physics addressing space of each data; Wherein, said physical addressing space comprises at least two data memory blocks and a data active zone indicating bit; Wherein,
Two data memory blocks have all been preserved the plurality of data piece respectively, and the data block of preserving in two data memory blocks has relevance one to one;
Data active zone indicating bit is used to indicate the data storage area at current valid data piece place.
As further improvement of the present invention, when non-volatile data memory was carried out data reading operation, at first reading of data active zone indicating bit was judged the data storage area that current valid data piece belongs to, and then this data storage area is carried out data reading operation.
As further improvement of the present invention; When non-volatile data memory is carried out data write operation; Elder generation's reading of data active zone indicating bit is judged the data storage area that current valid data piece belongs to, and then the data storage area at non-valid data place is carried out data write operation.
As further improvement of the present invention, during said data write operation, the renewal of mark current data block, whether data storage area for confirmation update all.
As further improvement of the present invention, after data write operation was accomplished, the data storage area, current valid data piece place that data active zone indicating bit guides was for accomplishing the data storage area of data write operation.
As further improvement of the present invention, said data active zone indicating bit takies 1 bit non-volatile data-carrier store elementary cell, adopts 0 or 1 to indicate the data storage area that current valid data piece belongs to.
As further improvement of the present invention, said data active zone indicating bit takies n bit non-volatile data-carrier store elementary cell, and n is the positive integer greater than 1; Can adopt the n position of data active zone indicating bit perhaps to represent the data storage area that current valid data piece belongs to for " 0 " entirely in non-n position for " 0 " entirely.
The present invention also provides a kind of non-volatile data memory Data Update backup method, and this method comprises the steps:
The first step, reading of data active zone indicating bit, to judge the data storage area at current valid data piece place, the data storage area at current valid data piece place is first data storage area;
Second step, second data storage area that non-valid data piece is belonged to carry out data write operation;
The 3rd step, modification data active zone indicating bit, making it guide second data storage area is the data storage area at current valid data piece place.
As further improvement of the present invention, said method also comprises data reading operation, and its step is following:
A, reading of data active zone indicating bit are judged the data storage area that current valid data piece belongs to;
B, the data storage area that current valid data piece is belonged to carry out data reading operation.
As further improvement of the present invention,, then further comprise the steps: if in described data write operation process of second step, abnormal conditions occur
C1, non-volatile data memory re-power and reset;
C2, first reading of data active zone indicating bit, its guide is first data storage area, can read original data from first data storage area, the write operation failure.
As further improvement of the present invention,, then further comprise the steps: if in described modification data active zone indicating bit process of the 3rd step, abnormal conditions occur
X1, non-volatile data memory re-power and reset;
X2, reading of data active zone indicating bit, two kinds of situation can appear in this moment: data active zone indicating bit is not modified as yet, guides first data storage area, can read original data from first data storage area, the write operation failure; When data active zone indicating bit is modified, guide second data storage area, the user can read the data that write from second data storage area, then write operation success.
Adopt method and system of the present invention, even aborted appears in chip when non-volatile data memory is programmed, the data that also can avoid occurring storing are destroyed, and have effectively improved the security and the consistance of Data Update backup.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use is done to introduce simply in will describing embodiment below.
Fig. 1 is the theory diagram of non-volatile data memory Data Update standby system.
Process flow diagram when Fig. 2 is chip execution read operation.
Process flow diagram when Fig. 3 is chip execution write operation.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention will be carried out clear, intactly description.
The present invention provides a kind of non-volatile data memory Data Update standby system and method; Described non-volatile data memory is applied in the chip; The inherent characteristic of nonvolatile memory elementary cell has been adopted in the backup of its updating data, promptly its be worth non-0 promptly 1 with non-1 i.e. 0 characteristic.
The storage space of non-volatile data memory is divided into data storage area A and B, and data storage area A and B comprise a plurality of data blocks that are used to store data respectively.During said data write operation, the renewal of mark current data block, whether consistance for confirmation data storage area update all.
In addition, said storage space also further comprises a data active zone indicating bit Flag.When external unit carried out data reading operation to chip, data active zone indicating bit Flag was used to indicate external unit to select data storage area A or B, so that the correct reading of data of external unit; When external unit carries out data write operation to chip, select data storage area A or B to write data according to the guide of data active zone indicating bit Flag; So that accurately writing data.Below detailed description is made in the concrete guide of data active zone indicating bit Flag.
If a said data active zone indicating bit Flag takies 1 bit non-volatile data-carrier store elementary cell.
1-1, when data active zone indicating bit Flag is " 0 ", represent current valid data piece in the data storage area A, when data active zone indicating bit Flag is " 1 ", represent current valid data piece in the data storage area B.
1-2, when data active zone indicating bit Flag is " 0 ", represent current valid data piece in the data storage area B, when data active zone indicating bit Flag is " 1 ", represent current valid data piece in the data storage area A.
Two, in other preferred embodiments of the present invention, said data active zone indicating bit Flag can take n bit non-volatile data-carrier store elementary cell (n for greater than 1 positive integer).
2-1, wipe the back when " 0 " when non-volatile data memory; If the n position of data active zone indicating bit Flag is " 0 " entirely; Represent current valid data piece in the data storage area A; If data active zone indicating bit Flag is non-n position when complete " 0 ", represent current valid data piece in the data storage area B; Perhaps, if when the n position of data active zone indicating bit Flag be " 0 " entirely, represent current valid data piece in the data storage area B, if data active zone indicating bit Flag is non-n position entirely when " 0 ", represent current valid data piece in the data storage area A.
2-2, wipe the back when " 1 " when non-volatile data memory; If the n position of data active zone indicating bit Flag is " 1 " entirely; Represent current valid data piece in the data storage area A; If the n position of data active zone indicating bit Flag is non-when being " 1 " entirely, represent current valid data piece in the data storage area B; Perhaps, if when the n position of data active zone indicating bit Flag be " 1 " entirely, represent current valid data piece in the data storage area B, when being " 1 " entirely as if the n position of data active zone indicating bit Flag is non-, represent current valid data piece in the data storage area A.
When external unit carries out data write operation to chip; At first judge the position of current valid data piece according to data active zone indicating bit Flag: if data active zone indicating bit Flag guide current valid data piece in the data storage area A, then data block is carried out write operation in the data memory area B; If current valid data piece is B in the data storage area, then data block is carried out write operation in the data memory area A.
After write operation was all accomplished, to data active zone indicating bit Flag modifications of programming, the concrete numerical value that this programming is revised also according to current data active zone indicating bit Flag determined:
If the said data active zone of X1 indicating bit Flag takies 1 bit non-volatile data-carrier store elementary cell.
X1-1, current data active zone indicating bit Flag are " 0 ", then it are programmed and are revised as " 1 ";
If X1-2 current data active zone indicating bit Flag is " 1 ", then will programmes and be revised as " 0 " it.
X2, in other preferred embodiments of the present invention, said data active zone indicating bit Flag can take n bit non-volatile data-carrier store elementary cell (n for greater than 1 positive integer).
X2-1, wipe the back when " 0 " when non-volatile data memory, if the n position of current data active zone indicating bit Flag be " 0 " entirely, then it being programmed, to be revised as non-n position be " 0 " entirely; If current data active zone indicating bit Flag be non-n position entirely for " 0 ", then it is programmed and is revised as the n position and is " 0 " entirely.
X2-2, wipe the back when " 1 " when non-volatile data memory, if the n position of current data active zone indicating bit Flag be " 1 " entirely, then it being programmed, to be revised as non-n position be " 1 " entirely; If current data active zone indicating bit Flag be non-n position entirely for " 1 ", then it is programmed and is revised as the n position and is " 1 " entirely.
See also Fig. 1; Consistance data are 10 logic data blocks; Its each logic data block (being the address space that the user sees) is to there being two memory blocks physically; Be data storage area A and B, simultaneously have a storage space to be used to store data active zone indicating bit Flag in the non-volatile data memory space, with the memory block at the place of indicating current effective logic data block.
When the user read logic data block 1, its current effective logic data block possibly be stored among the data block A1 of data storage area or be stored among the data block B1 in data backup district; Concrete memory location is confirmed by data active zone indicating bit Flag.For example, when Flag is " 0 ", show that data block A1 is logic data block 1 current effective logic data block; When Flag is " 1 ", show that data block B1 is logic data block 1 current effective logic data block.
When the user carries out write operation to logic data block 1, at first confirm the position at current effective logic data block place; When Flag was " 0 ", the data block A1 that shows data storage area A was current effective logic data block, and the data that needs are write write the storage space that current non-effective logic data block belongs to, and promptly write the data block B1 of data storage area B; When Flag was " 1 ", the data block B1 that shows data storage area B was current effective logic data block, and the data that needs are write write the data block A1 of data storage area A.
After all consistance data programings of consistance data storage area A or B finish, carry out corresponding data active zone indicating bit Flag and carry out the negate modification.
Therefore, when the user upgrades backup operation to data inside chips, non-volatile data memory there are two programming steps:
The first step writes the consistance data;
In second step, revise data active zone indicating bit Flag.
If in first step process, abnormal conditions occur, for example, suppose to write that Flag is " 0 " before the data, show that current effective logic data block is the data block in the data storage area A, write data data block to the data storage area B this moment.If when writing data storage area B data block, the aborted situation occurs, no matter the data corruption of data block whether, this moment, Flag be " 0 " not modification.Once more behind the electrification reset, during user capture logic data block 1, this moment, Flag was " 0 " at chip, and the user still reads original data from logic data block A1, and promptly the user writes data failure, but data do not change.
If in the second step process, abnormal conditions occur; Suppose that Flag is " 0 " before the writing data blocks; Show that current valid data piece is the data block in the data storage area A, write the data block of data to the data storage area B, write the data success; Start Flag and revise, the Flag negate is revised as " 1 ".If the aborted situation in the Flag modification process, occurs, can occur then that two kinds of situation: Flag remain on " 0 " or Flag is modified as " 1 ".When Flag remained " 0 ", once more behind the electrification reset, during user capture logic data block 1, because this moment, Flag was " 0 ", the user still read original data from data block A1 at chip, and promptly the user writes data failure, and data do not change; When if Flag is modified as " 1 ", once more behind the electrification reset, during user capture logic data block 1, this moment, Flag be " 1 " at chip, and the user reads the data that newly write from data block B1, and promptly the user writes data successfully.
In sum, visible in two programming steps of non-volatile data memory, no matter the aborted situation appears on any time node, the data that non-user expectation can not occur occur.More than be for describing under the situation of " 0 " with Flag before the hypothesis writing data blocks; But be appreciated that when Flag for " 1 " though the time can draw the aborted situation equally and appear at any time on the node, the data that non-user expectation can not occur occur.
In practical implementation, increase amount of physical memory on the basis of non-volatile data memory storage space that can be in existing chip, with storage data active zone indicating bit Flag.External apparatus reads or writes and reads corresponding data active zone indicating bit Flag in the chip non-volatile data memory flow process; Be to read or write in existing external device data to increase the step that reads corresponding data active zone indicating bit Flag in the flow process, upgrade backup functionality so that realize the consistance data security.Read corresponding data active zone indicating bit Flag and realized by programmed control at chip internal, when external apparatus was used chip, the use of chip of upgrading back-up processing with the consistance data security that is unrealized was sensuously as broad as long.
See also Fig. 2, chip is carried out read operation and is comprised the steps:
I1, at first judge whether A of current valid data piece in the data storage area, if, execution in step I2 then, if not, execution in step I3 then;
I2, from the data storage area A reading of data, the data of correspondence are delivered to outside the chip
I3, current valid data piece deposit district B in data, the B reading of data from the data storage area, and the data of correspondence are delivered to outside the chip.
Seeing also Fig. 3, is that chip execution write operation comprises the steps:
V1, chip receive the instruction of write operation, judge the whether A in the data storage area of current valid data piece, if execution in step V2 then, if not, and direct execution in step V3 then
V2, the data block in the data storage area B at non-valid data piece place is carried out write operation, then execution in step V4
V2, the data block in the data storage area A at non-valid data piece place is carried out write operation, then execution in step V4
V4, mark current data block are updated;
V5, judge whether current non-virtual storage A or B data block all are updated, if, execution in step V6 then, if not, execution in step V7 then; Active zone indicating bit Flag and know that all data blocks have been updated mark Updates Information;
The write operation instruction of other data blocks is waited in V6, continuation, returns step V1.
More than through embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, as adopts the data active zone indicating bit Flag etc. of different bit wides all can make change, and these change structures also should be regarded as protection scope of the present invention.
Claims (7)
1. non-volatile data memory Data Update backup method; Be applied in the non-volatile data memory Data Update standby system; Said system comprises logic addressing space and physical addressing space; Said logic addressing space comprises plurality of data, the data block in the corresponding physics addressing space of each data; It is characterized in that:
Said physical addressing space comprises at least two data memory blocks and a data active zone indicating bit; Wherein, two data memory blocks have all been preserved the plurality of data piece respectively, and the data block of preserving in two data memory blocks has relevance one to one; Data active zone indicating bit is used to indicate the data storage area at current valid data piece place, and said non-volatile data memory Data Update backup method comprises the steps:
The first step, reading of data active zone indicating bit, to judge the data storage area at current valid data piece place, the data storage area at current valid data piece place is first data storage area;
Second step, second data storage area that non-valid data piece is belonged to carry out data write operation;
The 3rd step, modification data active zone indicating bit, making it guide second data storage area is the data storage area at current valid data piece place.
2. non-volatile data memory Data Update backup method as claimed in claim 1, it is characterized in that: said method also comprises data reading operation, its step is following:
A, reading of data active zone indicating bit are judged the data storage area that current valid data piece belongs to;
B, the data storage area that current valid data piece is belonged to carry out data reading operation.
3. non-volatile data memory Data Update backup method as claimed in claim 1 is characterized in that: when carrying out said data write operation, and the renewal of mark current data block, whether data storage area for confirmation update all.
4. non-volatile data memory Data Update backup method as claimed in claim 1; It is characterized in that: said data active zone indicating bit takies 1 bit non-volatile data-carrier store elementary cell, adopts 0 or 1 to indicate the data storage area that current valid data piece belongs to.
5. non-volatile data memory Data Update backup method as claimed in claim 1 is characterized in that: said data active zone indicating bit takies n bit non-volatile data-carrier store elementary cell, and n is the positive integer greater than 1; When non-volatile data memory was wiped the back for " 0 ", the n position of adopting data active zone indicating bit was that " 0 " or non-n position are the data storage area at the current valid data piece of " 0 " expression place entirely entirely; When non-volatile data memory was wiped the back for " 1 ", the n position of adopting data active zone indicating bit was that " 1 " or non-n position are the data storage area at the current valid data piece of " 1 " expression place entirely entirely.
6. non-volatile data memory Data Update backup method as claimed in claim 1 is characterized in that: if in described data write operation process of second step, abnormal conditions occur, then further comprise the steps:
C1, non-volatile data memory re-power and reset;
C2, first reading of data active zone indicating bit, its guide is first data storage area, reads original data from first data storage area, the write operation failure.
7. non-volatile data memory Data Update backup method as claimed in claim 1 is characterized in that: if in described modification data active zone indicating bit process of the 3rd step, abnormal conditions occur, then further comprise the steps:
X1, non-volatile data memory re-power and reset;
X2, reading of data active zone indicating bit, two kinds of situation can appear in this moment: data active zone indicating bit is not modified as yet, guides first data storage area, reads original data from first data storage area, the write operation failure; When data active zone indicating bit is modified, guide second data storage area, the user reads the data that write from second data storage area, then write operation success.
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| CN102916776B (en) * | 2012-10-15 | 2015-09-09 | 青岛海信宽带多媒体技术有限公司 | optical module parameter transmission method and device |
| CN103793290B (en) * | 2012-10-31 | 2018-03-09 | 腾讯科技（深圳）有限公司 | A kind of disaster tolerance system and its method for reading data |
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| US6366986B1 (en) * | 1998-06-30 | 2002-04-02 | Emc Corporation | Method and apparatus for differential backup in a computer storage system |
| CN1627274A (en) * | 1995-03-23 | 2005-06-15 | 切恩尼软件（英国）有限公司 | Backup system and backup method |
| CN101281493A (en) * | 2008-05-26 | 2008-10-08 | 中兴通讯股份有限公司 | And non flash memory device and management method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1627274A (en) * | 1995-03-23 | 2005-06-15 | 切恩尼软件（英国）有限公司 | Backup system and backup method |
| US6366986B1 (en) * | 1998-06-30 | 2002-04-02 | Emc Corporation | Method and apparatus for differential backup in a computer storage system |
| CN101281493A (en) * | 2008-05-26 | 2008-10-08 | 中兴通讯股份有限公司 | And non flash memory device and management method thereof |
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