CN101726942B - Method for making pixel unit - Google Patents
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- CN101726942B CN101726942B CN2008102011556A CN200810201155A CN101726942B CN 101726942 B CN101726942 B CN 101726942B CN 2008102011556 A CN2008102011556 A CN 2008102011556A CN 200810201155 A CN200810201155 A CN 200810201155A CN 101726942 B CN101726942 B CN 101726942B
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Abstract
The invention provides a pixel unit. The pixel unit comprises a gate electrode line, a data line, a thin film transistor, a pixel electrode, a scanning line, a signal reading line, and a PIN diode, wherein the thin film transistor is electrically connected with the gate electrode line and the data line; the pixel electrode is electrically connected with the thin film transistor; the scanning line is arranged in parallel to the gate electrode line; the signal reading line is arranged in parallel to the data line; and one end of the PIN diode is electrically connected with the scanning line, and the other end of the PIN diode is electrically connected with the signal reading line so as to detect the light changes outside the pixel unit and output a light current according to the light changes. On the premise of not lowering an aperture ratio, the pixel unit can achieve higher detection precision by a simpler detection circuit, and the manufacturing cost is lowered.
Description
Technical field
The invention relates to a kind of Liquid crystal disply device and its preparation method, relate in particular to a kind of touch control type LCD device and manufacturing approach thereof.
Background technology
Along with industry is flourishing day by day; Mobile phone (Mobile Phone), personal digital assistant (Personal Digital Assistant), mobile computer (Notebook) and Tablet PC digitization tools such as (Planet Computer) develops towards direction more convenient, multi-functional and attractive in appearance invariably.Yet; Display screen in mobile phone, personal digital assistant, mobile computer and the Tablet PC is indispensable man-machine communication interface; The display screen that sees through the said goods can bring more facility for user's operation, and wherein most display screen all is main flow with the liquid crystal indicator.
Simultaneously; Along with the fast development and the application of infotech, wireless mobile communication and information household appliances in recent years; More facility, volume are more lightly changed and more humane purpose in order to reach; Many information products change into and use touch panel (Touch Panel) as input media, wherein the most popular more now product of touch control type LCD device by input medias such as traditional keyboard or mouses.
The structure of convention touch-control liquid crystal display panel can be with reference to U.S. Pat 7; 208; 718 hold within disclosing with US2007/0080956; Be used as optical detector through in each pixel cell of display panels, making a TFT in addition, mat TFT measures the position of user's touch-control in the photocurrent variations of bright attitude and dark attitude.
The photoelectric characteristic curve of TFT optical detector can be with reference to U.S. Pat 7,208, and shown in No. 718 Figure of description Fig.7, it discloses photocurrent and its gate voltage (Vgs) characteristic under the Different Light irradiation of TFT optical detector output in the available liquid crystal display panel.By knowing among the figure, adopt TFT to exist following not enough as the aforementioned touch-control liquid crystal display panel of optical detector:
When the Vgs value was 5V, bright, the dark attitude difference between current of TFT optical detector was about 3～5 times apart from very little.And the electric current magnitude that the TFT optical detector is produced is very little, is 10
-8Magnitude.Thereby, must additional designs noise filtering circuit (Noise Filter) and signal amplifier circuit complicated, that precision is high detect photocurrent.In addition, although by the area of the TFT that increases the TFT optical detector, but widen bright, the dark attitude difference between current distance of optical detector, yet, so will increase optical detector shared area in pixel cell, the aperture opening ratio of reduction display panels.
In view of above-mentioned, the touch-control liquid crystal display panel and the manufacturing approach thereof that provide a kind of circuit structure relatively simply and not to reduce the existing aperture opening ratio of panel have its necessity in fact.
Summary of the invention
The object of the present invention is to provide a kind of pixel cell, it can solve tradition and use TFT as the existing shortcoming of optical detector.Pixel cell proposed by the invention comprises a gate line line and a data line; One thin film transistor (TFT), itself and said gate line and said data line electrically connect; One pixel electrode, itself and said thin film transistor (TFT) electrically connect; The one scan line, its parallel said gate line setting; One read output signal line, its parallel said data line setting; One PIN diode, an end of said PIN diode are electrically connected at said sweep trace and the other end is electrically connected at said read output signal line, is used to detect the outside illumination variation of pixel cell, and exports a photocurrent in view of the above.
According to embodiments of the invention, the read output signal line is connected to a signal detection circuit in the described pixel cell.
According to embodiments of the invention; Said signal detection circuit comprises an amplifier and a comparer; Said amplifier input terminal connects said read output signal line; And the output terminal of said amplifier is connected to one of said comparer and relatively holds, and another of said comparer relatively held and then connected a reference voltage, and its output terminal is connected in a touch detection system.
According to embodiments of the invention, described pixel cell also comprises a reservior capacitor, and itself and said thin film transistor (TFT) electrically connect.
Another object of the present invention is to provide a kind of touch-control liquid crystal display panel, and it can avoid traditional touch-control liquid crystal display panel to use TFT as the existing shortcoming of optical detector.This touch-control liquid crystal display panel comprises one first substrate; Comprise on first substrate being provided with a plurality of pixel cells, and each pixel cell comprises a gate line, a data line, the thin film transistor (TFT) that is connected with data line with gate line and the pixel electrode that electrically connects with thin film transistor (TFT); At least one sweep trace and at least one read output signal line are arranged on first substrate, and the parallel said gate line setting of said sweep trace, the said data line setting of said read output signal line parallel; At least one PIN diode is arranged on first substrate, and an end of said PIN diode is electrically connected at said sweep trace and the other end is electrically connected at said read output signal line, is used to detect the outside illumination variation of pixel cell, and exports a photocurrent in view of the above; One second substrate is arranged at the subtend of first substrate; And a liquid crystal layer, be provided with between said first substrate and said second substrate.
According to embodiments of the invention, described touch-control liquid crystal display panel wherein promptly is provided with a PIN diode and a sweep trace and a read output signal line in the pixel cell of every given number.
According to embodiments of the invention, described touch-control liquid crystal display panel also comprises a signal detection circuit, and itself and said read output signal line electrically connect.
According to embodiments of the invention; Signal detection circuit described in the described touch-control liquid crystal display panel comprises an amplifier and a comparer; Said amplifier input terminal connects the output of said read output signal line; The output terminal of said amplifier is connected to one of said comparer and relatively holds, and another of said comparer relatively held and then connect a reference voltage, and its output terminal is connected in a touch detection system.
According to embodiments of the invention, described touch-control liquid crystal display panel further comprises at least one surround lighting optical detector, and when environmental light brightness changes, the reference voltage that adopts in the said comparer will change thereupon.
According to embodiments of the invention, each pixel cell also comprises a reservior capacitor in the described touch-control liquid crystal display panel, and itself and said thin film transistor (TFT) electrically connect.
The present invention's another purpose is to provide a kind of manufacturing approach of pixel cell; It is included in and forms a first metal layer on the substrate, and it comprises a gate, a gate line that is connected with this gate, one first electrode and the one scan line that is connected with this first electrode.Form a gate insulation layer, cover the first metal layer, remove the said gate insulation layer of part afterwards, to expose first electrode.On first electrode of said exposure, form a P type doped layer.Form semi-conductor layer, its covering is positioned at the gate insulation layer and the P type doped layer of gate top.Form a N type doped layer, it covers said semiconductor layer.On N type doped layer, form one second metal level; It comprises one source pole, a drain that is positioned at the gate top and a data line that is connected with source electrode; And one second electrode that is positioned at first electrode top reaches a read output signal line that is connected with this second electrode; Wherein gate, source electrode and drain constitute a thin film transistor (TFT), and first electrode, second electrode and the P type between first and second electrode and N type doped layer constitute a PIN diode.Remove the N type doped layer that is not covered by second metal level.Form a protective seam, cover second metal level; And on protective seam, forming a pixel electrode, itself and drain electrically connect.
According to embodiments of the invention, has light openings in second electrode of PIN diode described in the manufacturing approach of described pixel cell.
According to embodiments of the invention, the material of semiconductor layer comprises amorphous silicon in the manufacturing approach of described pixel cell.
According to embodiments of the invention, the material of P type doped layer comprises the amorphous silicon that is mixed with p type impurity in the manufacturing approach of described pixel cell.
According to embodiments of the invention, the material of N type doped layer comprises the amorphous silicon that is mixed with N type impurity in the manufacturing approach of said pixel cell.
According to embodiments of the invention, the method that forms the first metal layer in the manufacturing approach of described pixel cell comprises carries out a deposition program and an etching program.
According to embodiments of the invention, the method that forms second metal level in the manufacturing approach of described pixel cell comprises carries out a deposition program and an etching program.
Compared to prior art; The present invention's advantage is: pixel cell according to the invention and touch-control liquid crystal display panel thereof adopt PIN diode as optical detector; Because factors such as reverse biased size are less to the influence of PIN diode photocurrent; Brightness is the principal element of decision PIN diode photocurrent, so its corresponding amplifier, squelch circuit are fairly simple, do not need complicated and high-precision detecting circuit.Thereby pixel cell according to the invention and touch-control liquid crystal display panel thereof can obtain to have reduced manufacturing cost than high measurement accuracy by comparatively simple detecting circuit under the prerequisite that does not reduce aperture opening ratio.
For let above and other objects of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended graphicly, elaborates as follows.
Description of drawings
Fig. 1 is the structural representation of the display panels of one embodiment of the invention.
Fig. 2 is the schematic equivalent circuit of the pixel cell of one embodiment of the invention.
Fig. 3 is the synoptic diagram of the signal detection circuit in the display panels of one embodiment of the invention.
Fig. 4 is the synoptic diagram that in display panels, adds the surround lighting detector in addition.
Fig. 5 A-5I is the processing procedure synoptic diagram of the pixel cell of one embodiment of the invention.
Fig. 6 is the photoelectric characteristic curve map of optical detector in the touch-control liquid crystal display panel of one embodiment of the invention.
Embodiment
Fig. 1 is the structural representation of touch-control liquid crystal display panel of the present invention, and Fig. 2 is the synoptic diagram of one of them pixel cell on Fig. 1 first substrate.Please with reference to Fig. 1, touch-control liquid crystal display panel of the present invention comprises one first substrate 100; One second substrate 300, it is arranged at the subtend of said first substrate 100; And a liquid crystal layer (figure does not show), it is arranged between the said substrate 100,300.
In one embodiment, second substrate 300 is a colored filter substrate.Comprise on second substrate 300 and be provided with a colorized optical filtering array and a black matrix (not illustrating).In a preferred embodiment, more comprise on second substrate 300 being provided with a subtend electrode (not illustrating).In addition, can also dispose other rete on second substrate 300, for example be flatness layer, alignment film or the like.
Generally speaking; In order to make the distribution of optical detector simplify; Can not need in each pixel cell 110, all need increase a PIN diode 120; The density that PIN diode 120 distributes can be adjusted according to actual demand, establishes 1 PIN diode like per 4 pixel cells, and the total quantity of optical detector is 1/4 of a resolution.That is, can design position and the number of considering that PIN diode is provided with, can further reduce the area occupied of PIN diode thus, further improve the aperture opening ratio of display panel according to the position precision and the resolution of display panels.
Please be simultaneously with reference to Fig. 1 and Fig. 2, the thin film transistor (TFT) 130 that general pixel cell 110 includes a gate line GL, a data line DL, electrically connect with gate line GL and data line DL, with the pixel electrode 140 of thin film transistor (TFT) 130 electric connections.The thin film transistor (TFT) 130 that the pixel cell 110 that is provided with PIN diode then comprises a gate line GL, a data line DL, electrically connect with gate line GL and data line DL, with the pixel electrode of thin film transistor (TFT) 130 electric connection 140, a PIN diode 120, with the one scan line SL and a read output signal line ROL of PIN diode 120 electric connections.
Gate line GL extends setting along horizontal direction, is used to transmit a gate signal to said thin film transistor (TFT) 130.Said data line DL extends setting along vertical direction, is used to transmit a data-signal to said thin film transistor (TFT) 130.
Said thin film transistor (TFT) 130 electrically connects with said gate line GL and data line DL, and it comprises: a gate, and its property is connected to said gate line GL; One source pole, it is electrically connected at described data line DL; And a drain, it is electrically connected at said pixel electrode 140.In addition, each pixel cell 110 more comprises MM CAP Cs and liquid crystal capacitance Clc.When high-tension gate signal was imported thin film transistor (TFT) 130 by gate line GL, thin film transistor (TFT) 130 was switched on, and data-signal exports liquid crystal capacitance Clc and MM CAP Cs to from the drain of thin film transistor (TFT) 130.
Said sweep trace SL is used to transmit the one scan signal along the horizontal direction setting.Said PIN diode 120 is arranged at sweep trace SL and read output signal line ROL intersection, as the optical detector of detecting extraneous light variation.One end (negative pole) of said PIN diode 120 is connected to sweep trace SL, and its other end (positive pole) is electrically connected at said read output signal line ROL.Said read output signal line ROL is along the vertical direction setting, and end has a signal detection circuit.Said read output signal line ROL is used for the signal that PIN diode 120 produces is sent to a signal detection circuit.
Above-mentioned signal detection circuit is as shown in Figure 3, and it comprises an amplifier 210 and a comparer 220.Wherein, the input end of amplifier 210 is connected in the output of read output signal line ROL, is used for converting photocurrent into output voltage, and its output is connected to one of said comparer 220 and relatively holds.Another of comparer 220 relatively held and then met a reference voltage Vr, and its output terminal is connected to a touch detection system 230.
In addition, in order to improve the reliability of detection signal, need usually suitable reference voltage Vr to be provided for comparer 220.For this reason, display panels of the present invention can further be provided with a plurality of RPs, in order to the ambient light condition of detecting panel, produces a reference voltage Vr who is fit to.For example, with reference to embodiment as shown in Figure 4, be provided with four RP R around the display panels of the present invention; At RP R four independently surround lighting detectors are set; In order to the ambient light condition of detecting panel, when environmental light brightness changed, the reference voltage Vr that the comparison termination of said comparer 220 is gone into also changed thereupon; Can produce suitable reference voltage thus, improve the reliability of detection signal.The position of said RP and light detection element quantity can not have mandatory provisions according to the actual conditions setting.The said optical detector that is used to detect the ambient light condition of panel is arranged at first substrate 300 of display panels as shown in Figure 1, and it can adopt TFT or PIN diode.In one embodiment, PIN diode 120 can be set in specific pixel unit 110, with as the surround lighting detector.
Display panels of the present invention when utilizing the user to touch panel, causes panel to be contacted local light and changes when work; Contact produces different light with contactless to the panel place; Contact and the contactless difference that produces photocurrent to the PIN diode in panel place, ROL exports signal detection circuit to by the read output signal line, by the voltage differences of exporting on the comparer 220; Can calculate the position of touch-control, accomplish the function of contact panel.
For example, as shown in Figure 3, provide a bias voltage to make PIN diode 120 work at sweep trace SL, described bias voltage for example can be 5V.Under a certain particular bias voltage situation, in PIN diode 120 was not blocked, its output current was bigger, was called bright attitude this moment; Otherwise, if when PIN diode is blocked, the light intensity that it received will be a little less than, its output photocurrent is less, is called dark attitude.For example; When PIN diode 120 is blocked; Owing to significantly weaken during the bright attitude of light strength ratio, thereby the photocurrent of its output is will be brighter little during attitude, and the electric current of read output signal line ROL changes; Compare through amplifier 210 amplification outputs and with reference voltage; Output voltage signal when 220 outputs of comparer, one obvious difference and bright attitude, as in the present embodiment being a height (high) voltage signal, this moment, touch detection system can go out by the position of touch-control according to the output calculated signals of sweep signal SL and comparer 220.
The above-mentioned processing procedure that is provided with the pixel cell 110 of PIN diode can combine general TFT processing procedure to carry out, and it is as long as newly-increased one deck P type doped layer (the amorphous silicon a-Si:H of the p type impurity that for example mixes) can be made PIN diode.Fig. 5 A-5I is the manufacturing process synoptic diagram of pixel cell according to an embodiment of the invention, and it is the diagrammatic cross-section of one of them pixel cell of Fig. 1.The manufacturing approach of pixel cell 110 of the present invention is described below.
Please on first substrate 100, form a first metal layer simultaneously with reference to figure 1 and Fig. 5 A, it comprises a gate 131, a gate line GL, one first electrode 121 that is connected with gate 131 and the one scan line SL that is connected with first electrode 121.Wherein, the method that forms said the first metal layer comprises carries out a deposition program and an etching program.
Then, please refer to Fig. 5 B, form a gate insulation layer 132, cover previous described the first metal layer.For example, adopt the chemical vapor deposition mode to deposit one deck monox or silicon nitride film and form described gate insulation layer 132.
Afterwards, please refer to Fig. 5 C, remove the said gate insulation layer 132 of part, to expose first electrode 121.Removing the said gate insulation layer 132 of part for example is to adopt little shadow and etching program to expose first electrode 121.
Please refer to Fig. 5 D, on first electrode 121 of said exposure, form one deck P type doped layer 125.Wherein, the material of said P type doped layer 125 comprises the amorphous silicon that is mixed with p type impurity.The method that forms P type doped layer 125 for example is to utilize deposition process and when deposition, add p type impurity, carries out etching program more afterwards and forms.
Please refer to Fig. 5 E, form semi-conductor layer 134, its covering is positioned at the gate insulation layer 132 and the P type doped layer 125 of gate 131 tops.Wherein, the material of said semiconductor layer 134 comprises amorphous silicon.
Please refer to Fig. 5 F, form a N type doped layer 136, it covers said semiconductor layer 134.Wherein, the material of said N type doped layer comprises the amorphous silicon that is mixed with N type impurity.The method that forms N type doped layer 134 for example is to utilize deposition process and when deposition, add N type impurity, carries out etching program more afterwards and forms.
Afterwards; Please be simultaneously with reference to figure 1 and Fig. 5 G; On N type doped layer 136, form one second metal level; It comprises one source pole 133, a drain 135 that is positioned at gate 131 tops and a data line DL who is connected with source electrode 133, and is positioned at one second electrode 123 of first electrode, 121 tops and a read output signal line ROL who is connected with second electrode 123.Wherein, gate 131, source electrode 133 constitutes a thin film transistor (TFT) 130 with drain 135, and first electrode 121, second electrode 123 and the P type between first and second electrode and N type doped layer constitute a PIN diode 120.In one embodiment, has light openings 127 in second electrode 123.And the method that forms second metal level comprises and carries out a deposition program and an etching program.
Please refer to Fig. 5 H, remove the N type doped layer 136 that is not covered, so that beneath semiconductor layer 134 comes out by second metal level.
Afterwards, please form a protective seam 138 simultaneously with reference to figure 1 and Fig. 5 I, cover second metal level, and on protective seam 138, form a pixel electrode 140, itself and drain 135 electrically connect.In one embodiment, protective seam 138 has contact window 138a, and pixel electrode 140 is to electrically connect with drain 135 by contact window 138a.The material of protective seam 138 for example is a silicon nitride.The material of pixel electrode 140 for example is a metal oxide, like indium tin oxide, indium-zinc oxide or the like.
After forming pixel electrode 140, can also on first substrate 100, form other rete, for example alignment film or the like.
And on first substrate 100, accomplish after the making of pixel cell, just can stand in for 300 groups with second substrate, and in first and second substrate 100, inject liquid crystal layer between 300, promptly accomplish the making of touch-control liquid crystal display panel.
Fig. 6 shows the photoelectric characteristic figure that is used among the present invention as the PIN diode of optical detector.By finding out among the figure: when touch-control liquid crystal display panel of the present invention adopted PIN diode as optical detector, factors such as reverse biased size were less to the influence of PIN diode photocurrent, and brightness is the main factor of decision PIN diode photocurrent, and its photocurrent is 10
-6Magnitude is than 10 of TFT Photoelectric Detection assembly generation
-8The photocurrent of magnitude will exceed hundreds of times.Thereby adopt PIN diode as optical detector, in the time of can avoiding adopting TFT,, reduce the problem of liquid crystal display LCD panel aperture opening ratio for the intensity that improves detecting signal must increase the optical detector area as optical detector.And PIN diode has higher signal to noise ratio (S/N ratio) with respect to TFT as the Photoelectric Detection assembly, so its corresponding amplifier, squelch circuit are fairly simple, does not need complicated and high-precision detecting circuit, has reduced cost.In addition, above-mentioned PIN diode can also combine with existing TFT processing procedure, therefore can not increase the difficulty of processing procedure.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Any those of ordinary skill in the art; In spirit that does not break away from the present invention and scope, when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion with what claim defined.
Claims (7)
1. the manufacturing approach of a pixel cell is characterized in that, it comprises:
On a substrate, form a first metal layer, it comprises a gate, a gate line that is connected with said gate, one first electrode and the one scan line that is connected with said first electrode;
Form a gate insulation layer, cover said the first metal layer;
Remove the said gate insulation layer of part, to expose said first electrode;
On said first electrode of said exposure, form a P type doped layer;
Form semi-conductor layer, its covering is positioned at the said gate insulation layer and the said P type doped layer of said gate top;
Form a N type doped layer, it covers said semiconductor layer;
On said N type doped layer, form one second metal level; It comprises one source pole, a drain that is positioned at said gate top and a data line that is connected with said source electrode; And one second electrode that is positioned at said first electrode top reaches a read output signal line that is connected with said second electrode; Wherein said gate, said source electrode and said drain constitute a thin film transistor (TFT), and said first electrode, said second electrode and the P type between said first and second electrode and N type doped layer constitute a PIN diode;
Remove the said N type doped layer that is not covered by said second metal level;
Form a protective seam, cover said second metal level; And
On said protective seam, form a pixel electrode, itself and said drain electrically connect.
2. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, has light openings in second electrode of wherein said PIN diode.
3. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, the material of wherein said semiconductor layer comprises amorphous silicon.
4. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, the material of wherein said P type doped layer comprises the amorphous silicon that is mixed with p type impurity.
5. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, the material of wherein said N type doped layer comprises the amorphous silicon that is mixed with N type impurity.
6. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, the method that wherein forms the first metal layer comprises carries out a deposition program and an etching program.
7. the manufacturing approach of pixel cell as claimed in claim 1 is characterized in that, the method that wherein forms second metal level comprises carries out a deposition program and an etching program.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104280970B (en) | 2014-11-06 | 2017-12-22 | 上海天马微电子有限公司 | Array base palte and liquid crystal display panel |
| CN110174974B (en) * | 2018-07-25 | 2020-07-24 | 京东方科技集团股份有限公司 | Touch circuit, touch device and touch method |
| JP7365775B2 (en) * | 2019-02-21 | 2023-10-20 | ソニーセミコンダクタソリューションズ株式会社 | solid-state image sensor |
| CN111445869B (en) * | 2020-04-30 | 2022-04-15 | 京东方科技集团股份有限公司 | Brightness control device, control method thereof and display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610629A (en) * | 1991-12-06 | 1997-03-11 | Ncr Corporation | Pen input to liquid crystal display |
| CN101099379A (en) * | 2004-11-05 | 2008-01-02 | 索尼株式会社 | Light sensor and pixel selecting method for light sensor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610629A (en) * | 1991-12-06 | 1997-03-11 | Ncr Corporation | Pen input to liquid crystal display |
| CN101099379A (en) * | 2004-11-05 | 2008-01-02 | 索尼株式会社 | Light sensor and pixel selecting method for light sensor |
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