CN101750878B - optical proximity correction method - Google Patents
optical proximity correction method Download PDFInfo
- Publication number
- CN101750878B CN101750878B CN2008102075172A CN200810207517A CN101750878B CN 101750878 B CN101750878 B CN 101750878B CN 2008102075172 A CN2008102075172 A CN 2008102075172A CN 200810207517 A CN200810207517 A CN 200810207517A CN 101750878 B CN101750878 B CN 101750878B
- Authority
- CN
- China
- Prior art keywords
- exposure
- graphic parameter
- resolution chart
- correction
- forms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to an optical proximity correction method which comprises the following steps: measuring a test pattern on the mask plate to obtain the graphic parameters of the test pattern; exposing according to the mask plate to obtain the graphic parameters formed by exposure; filtering the graphic parameters formed by exposure; according to the graphic parameters formed by exposure and the graphic parameters of the test pattern, obtaining the correction factor corresponding to the scanning form adopted by the exposure; and updating the original optical proximity correction model according to the correction factor, thereby obtaining the optical proximity correction model corresponding to the scanning form adopted by the exposure. The invention calculates the correction factor according to the parameter difference caused by different scanning forms adopted by exposure, and updates the original optical proximity correction model so as to obtain the updated optical proximity correction model, thereby enhancing accuracy of optical proximity correction.
Description
Technical field
The present invention relates to optical near-correction technology, particularly optical adjacent correction method.
Background technology
Growing along with integrated circuit, design size is more and more littler, because diffraction of light and interference exist certain deformation and deviation between actual litho pattern that obtains and the mask plate figure on the wafer, this error in the photoetching directly influences circuit performance and the rate that manufactures a finished product.
Optical near-correction OPC (Optical Proximity Correction) is a kind of effective method of eliminating this error.OPC can be divided into two kinds, a kind of OPC that is based on rule, and another kind is based on the OPC of model.In order to adapt to the complexity of design, make correction more accurate, more and more be used based on the OPC of model.Based on the OPC of model, simply, be exactly the mask correction figure, and set up the optical near-correction model, mask graph is carried out the lithography simulation imaging, come the correction target graphics shape by iteration optimization.Wherein, the process modeling in the optical near-correction model is used to simulate steps such as mask manufacturing, exposure, development and etching.
At present, in photoetching process, adopt the electron beam graph exposure usually, the electron beam graph exposure mainly contains sequential scanning and two kinds of forms of vector scan.Because optical effect,,, can cause also that the actual figure that obtains there are differences on the wafer because the scanning form is different although use same mask to expose.Because by measuring formed figure on the wafer, set up the optical near-correction model, this has just brought problem, for example, for same position or critical size, owing in exposure process, adopt different scanning forms, actually will obtain two different data, but optical near-correction model of the prior art is not considered this type of difference, existing optical near-correction model is thought for same position or critical size, behind the exposure imaging on wafer formed image be unique, do not change with the scanning form.That is to say that because the difference when not considering actual imaging, therefore the optical near-correction model of being set up can't be made accurately photoetching process and being proofreaied and correct in the prior art.
Summary of the invention
The problem that the present invention solves is because existing optical near-correction model is thought for same position or critical size, behind the exposure imaging on wafer formed image be unique, do not change, and make to proofread and correct and mistake occurs with the scanning form.
For addressing the above problem, the invention provides a kind of optical adjacent correction method, comprising: measure the resolution chart on the mask, obtain the graphic parameter of described resolution chart; Expose according to described mask, obtain the graphic parameter that described exposure forms; The graphic parameter that described exposure is formed carries out filtration treatment; According to the graphic parameter of described exposure formation and the graphic parameter of described resolution chart, obtain the corresponding correction factor of scanning form that adopts with described exposure; According to described correction factor, original optical near-correction model is upgraded, obtain the corresponding optical near-correction model of scanning form that adopts with described exposure.
Optionally, the graphic parameter of described graphic parameter that forms according to exposing and resolution chart obtains the corresponding correction factor of scanning form with described exposure employing, comprise: utilize the graphic parameter of resolution chart and the graphic parameter of product for exposing and forming of correction factor, obtain correction factor.
Optionally, described correction factor is a gaussian kernel function.
Optionally, describedly original optical near-correction model is upgraded, comprising: other kernel function in correction factor kernel function and the original optical near-correction model is carried out convolution according to correction factor.
Optionally, the graphic parameter of described resolution chart comprises the critical size of resolution chart.
Optionally, described resolution chart comprises densely covered figure.
Optionally, the described graphic parameter that obtains resolution chart according to the resolution chart on the mask also comprises: form resolution chart on mask.
Optionally, the graphic parameter that described exposure forms comprises: before the development, the image that forms on the photoresist is measured, obtained the corresponding value of graphic parameter with described resolution chart.
Optionally, the graphic parameter that described exposure forms comprises: the photoresist after the exposure is developed, measure formed image on the wafer, obtain the corresponding value of graphic parameter with described resolution chart.
Optionally, the graphic parameter that described acquisition exposure forms comprises: the each collection is no less than the graphic parameter that 1000 exposure forms.
Optionally, the graphic parameter that described acquisition exposure forms comprises: in 65nm technology, the each collection is no less than the graphic parameter that 600 exposure forms.
Optionally, the described graphic parameter that exposure is formed carries out filtration treatment, comprising: remove the graphic parameter that the relatively poor described exposure of imaging effect forms.
Optionally, the described graphic parameter that exposure is formed carries out filtration treatment, comprising: the validity of verifying the graphic parameter that collected exposure forms.
Optionally, the validity of the graphic parameter that the collected exposure of described checking forms, comprise: for the graphic parameter of the exposure formation of repeatedly collecting, calculate the difference sum of the graphic parameter of per twice collected exposure formation, more described difference sum and setting threshold, when described difference sum during greater than described setting threshold, there is error in the graphic parameter that then has at least once collected exposure to form.
Optionally, described setting threshold is 2nm.
Optionally, also comprise: verify described correction factor.
Optionally, described checking correction factor comprises: when adopting the described optical near-correction modeling corresponding with the scanning form that the graphic parameter of described resolution chart is carried out photoetching, obtain simulated data, the difference of the graphic parameter that more described simulated data and described exposure form, wherein, be best correction factor with the corresponding described correction factor of the difference of minimum.
Compared with prior art, the scanning form that is adopted in exposure process is not simultaneously, the present invention makes same position or the critical size on the mask, correspondence has corresponding correction factor, with the optical near-correction model that obtains by described correction factor, thereby the result by the optical near-correction modeling is conformed to actual conditions, improved the accuracy of proofreading and correct.
Description of drawings
Fig. 1 is the schematic flow sheet of optical adjacent correction method embodiment of the present invention;
Fig. 2 is in the optical adjacent correction method embodiment of the present invention, the synoptic diagram of resolution chart;
Fig. 3 is the schematic flow sheet of the another kind of embodiment of optical adjacent correction method of the present invention;
Fig. 4 is in the prior art, graphic parameter that forms corresponding to the exposure of different scanning form and the synoptic diagram by optical near-correction model fitting curve;
Fig. 5 is in the specific embodiment of the invention, graphic parameter that forms corresponding to the exposure of different scanning form and the synoptic diagram by corresponding optical near-correction model fitting curve.
Embodiment
The optical adjacent correction method that embodiment of the present invention provided, the parameter difference that adopts different scanning forms to be caused when considering just owing to exposure, calculate correction factor according to described parameter difference, and original optical near-correction model upgraded, obtain the optical near-correction model of renewal, thereby improved the accuracy of optical near-correction.
With reference to figure 1, the invention provides a kind of optical adjacent correction method, comprising: step S1, measure the resolution chart on the mask, obtain the graphic parameter of described resolution chart; Step S2 makes the resolution chart exposure on the described mask, obtains the graphic parameter that described exposure forms; Step S3, the graphic parameter that described exposure is formed carries out filtration treatment; Step S4 according to the graphic parameter of described exposure formation and the graphic parameter of described resolution chart, obtains the corresponding correction factor of scanning form that adopts with described exposure; Step S5 according to described correction factor, upgrades original optical near-correction model, obtains the corresponding optical near-correction model of scanning form that adopts with described exposure.
Below in conjunction with drawings and Examples, specifically embodiment of the present invention is described in detail.
Measure describedly among the step S1, obtain the graphic parameter of resolution chart, specifically, can comprise: resolution chart is measured, obtained critical size according to the resolution chart on the mask.Critical size is the minimum feature size in the circuit, and specifically, critical size can be one less in distance between centers of tracks and the space between line endings.
With reference to figure 2, shown in the figure synoptic diagram of 8 beta versions in the light shield, wherein resolution chart adopts the figure that gathers, and promptly is made up of the dense line with different live width gap ratios, specifically, can comprise 9 lines on each beta version (pad).Wherein, described densely covered figure has space periodic (pitch), and described space periodic is meant live width and distance between centers of tracks sum of a line.
In the present embodiment, be that the mask that has ready-made resolution chart on it is carried out, still, also can before measuring, on mask, form resolution chart according to the needs of producing or proofreading and correct.Wherein, can comprise in the technology that forms resolution chart on the mask: on clear glass, form the lighttight chromium rete of one deck earlier; On the chromium rete, form anti-reflecting layer; Spin coating photoresistance resist layer on anti-reflecting layer; With optics directly write, projection electron-beam direct writing or scanning electron microscope (SEM) are directly write etc., and mode is exposed, and the layout line pattern in the layout software is transferred on the photoresistance resist layer, then defines mask line pattern opening with developing process on blocking layer; With the photoresistance resist layer is light shield, with wet etching or electricity slurry lithographic method etching anti-reflecting layer and chromium rete; After anti-reflecting layer and chromium rete etching are finished, remove photoresistance resist layer and anti-reflecting layer, form the mask line pattern zone and the lighttight mask line pattern zone of printing opacity.
Expose according to described mask among the step S2, obtain the graphic parameter that described exposure forms, specifically, can comprise: after described mask exposure, measure, collect the graphic parameter that exposure forms, the graphic parameter that described exposure forms is corresponding with the graphic parameter of described resolution chart.Because the graphic parameter that the exposure of adopting different scanning forms to be obtained forms is also inequality, the graphic parameter that described exposure forms is also relevant with concrete scanning form.
The graphic parameter that described exposure forms, specifically, can comprise before the development, the image that forms on the photoresist is measured, the corresponding value of graphic parameter of acquisition and described resolution chart also can comprise, the photoresist after the exposure is developed, measure formed image on the wafer, obtain the corresponding value of graphic parameter with described resolution chart.The graphic parameter that the exposure of collecting forms is many more, and accuracy is good more, but data bulk is many more, requirement to system processing power is also just high more, wherein, section according to actual needs and the real data processing power determines the quantity of the graphic parameter that collected exposure forms.In embodiment, can comprise repeatedly and collecting that for example three times, the each collection is no less than the graphic parameter that 1000 exposure forms.In 65nm technology, the graphic parameter number that each exposure of collecting forms is no less than 600.
Formed image can comprise specifically on the described measurement wafer: at first to same critical size, according to different space periodics, measure, along the critical size direction, repeat to obtain the graphic parameter that described exposure forms then according to the different measurements that space periodic carried out.
The graphic parameter that described in the step S3 exposure is formed carries out filtration treatment, can comprise: remove the graphic parameter that the relatively poor described exposure of imaging effect forms.Specifically, for in exposure process,, make that the actual image that forms differs bigger than the mask resolution chart on the wafer owing to process conditions restrictions or under-exposure that other reason caused etc., be the imaging weak effect, remove the graphic parameter of the exposure formation of these positions.
The validity of the graphic parameter that the purpose that the described graphic parameter that exposure is formed carries out filtration treatment is to verify that collected exposure forms.This is because in the process of the graphic parameter of collecting exposure formation, there are measuring error or artificial origin, for example collected wrong position, the graphic parameter that perhaps collected exposure forms is wrong, therefore need the graphic parameter that collected exposure forms be filtered.Specifically, graphic parameter for the exposure formation of repeatedly collecting, calculate the difference sum of the graphic parameter of per twice collected exposure formation, when described difference sum during greater than setting threshold, then in the graphic parameter that this twice collected exposure forms, there is error in the graphic parameter that has at least once collected exposure to form.In specific embodiment, collect for three times when dividing, and when collecting the graphic parameter that 1500 exposures form, described setting threshold can be 2nm at every turn.
Step S4 according to the graphic parameter of described exposure formation and the graphic parameter of described resolution chart, obtains the corresponding correction factor of scanning form that adopts with described exposure.Specifically, can comprise: the functional form of determining correction factor; By the graphic parameter of described exposure formation and the graphic parameter of described resolution chart, determine correction factor.
Wherein, described correction factor can be confirmed as different functional forms as required, and for example, described correction factor can be gaussian kernel function.
Wherein, determine can utilize following relation in the process of correction factor: the graphic parameter that the graphic parameter of resolution chart and the product of correction factor form for exposure obtains correction factor.
Step S5 according to described correction factor, upgrades original optical near-correction model, obtains the optical near-correction model corresponding with the scanning form.
In concrete enforcement, original optical near-correction model can comprise a plurality of gaussian kernel functions, convolution by a plurality of gaussian kernel functions is adjusted the variation of various optical technology parameters, and described optical technology parameter specifically can comprise optical source wavelength, resin aperture, coefficient of coherence, refraction coefficient etc.
Obtain after the correction factor, described correction factor also can be the gaussian kernel function form, by other kernel function in correction factor kernel function and the original optical near-correction model is carried out convolution, therefore obtain the optical near-correction model of renewal, because described correction factor is corresponding with the scanning form, therefore the optical near-correction model of described renewal is also corresponding with the scanning form.
The optical near-correction model of described renewal makes optical near-correction more accurate, that is to say, when adopting different scanning forms in the exposure process, can adopt the simulation of the graphic parameter of resolution chart being carried out technological process corresponding to the optical near-correction model of different scanning form, make the simulated data that is obtained more accurate, the technological process of more realistic photoetching, thus make the optics correction of carrying out according to described simulated data can obtain correction effect more accurately.
In other embodiment, with reference to figure 3,, can obtain different correction factors for different functional forms, therefore also can comprise: step S6, verify described correction factor.Specifically, described checking correction factor specifically can comprise: when adopting the described optical near-correction modeling corresponding with the scanning form that the graphic parameter of described resolution chart is carried out photoetching, obtain simulated data, the difference of the graphic parameter that more described simulated data and described exposure form.For different correction factors, can obtain the difference of the graphic parameter that different described simulated datas and exposure form, wherein, with the corresponding described correction factor of the difference of described minimum be best correction factor.
With reference to figure 4, in the prior art, when adopting the different scanning form, the graphic parameter that the exposure of described collection forms is also inequality, but, obtain in the process of optical near-correction model at the graphic parameter that forms according to exposure, do not consider described difference, although the scanning form difference that is adopted, still adopt same data value to calculate, thereby under different scanning forms, adopt the optical near-correction model of prior art, obtain same simulated data, and this result does not conform to the lithographic results of reality.
With reference to figure 5, in the specific embodiment of optical adjacent correction method of the present invention,, have corresponding with it different correction factor for different scanning forms, and different optical near-correction models.Even same figure is exposed, when its scanning form is different, pass through the difference of the optical near-correction model that adopted, can obtain different simulated datas, this and actual lithographic results match.That is to say that described optical near-correction model has higher accuracy more near truth.
The above-mentioned embodiment of the present invention adopts different scanning forms when having considered owing to exposure, make for same position or critical size, there are two different data, thereby according to such difference acquisition correction factor, and the optical near-correction model is upgraded by described correction factor, thereby obtain and the corresponding optical near-correction model of scanning form, improved the accuracy of proofreading and correct.
Though the present invention by the preferred embodiment explanation as above, these preferred embodiments are not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (12)
1. an optical adjacent correction method is characterized in that, comprising:
According to the resolution chart on the mask, obtain the graphic parameter of resolution chart;
Described mask is exposed, obtain the graphic parameter that exposure forms;
The graphic parameter that described exposure is formed carries out filtration treatment, the described graphic parameter that exposure is formed carries out filtration treatment, comprising: remove the graphic parameter of the relatively poor described exposure formation of imaging effect and the validity of verifying the graphic parameter that collected exposure forms; The validity of the graphic parameter that the collected exposure of described checking forms, comprise: for the graphic parameter of the exposure formation of repeatedly collecting, calculate the difference sum of the graphic parameter of per twice collected exposure formation, more described difference sum and setting threshold, when described difference sum during greater than described setting threshold, there is error in the graphic parameter that then has at least once collected exposure to form;
The graphic parameter that forms according to described exposure and the graphic parameter of described resolution chart obtain the corresponding correction factor of scanning form with described exposure employing, and described correction factor is a gaussian kernel function;
According to described correction factor, original optical near-correction model is upgraded, obtain the corresponding optical near-correction model of scanning form with described exposure employing, describedly original optical near-correction model is upgraded, comprising: other kernel function in described gaussian kernel function and the original optical near-correction model is carried out convolution according to correction factor.
2. optical adjacent correction method as claimed in claim 1, it is characterized in that, the graphic parameter of described graphic parameter that forms according to exposing and resolution chart obtains the corresponding correction factor of scanning form with described exposure employing, comprise: utilize the graphic parameter of resolution chart and the graphic parameter of product for exposing and forming of correction factor, by graphic parameter that described exposure is formed graphic parameter, obtain correction factor divided by described resolution chart.
3. optical adjacent correction method as claimed in claim 1 is characterized in that, the graphic parameter of described resolution chart comprises the critical size of resolution chart.
4. optical adjacent correction method as claimed in claim 1 is characterized in that described resolution chart comprises densely covered figure.
5. optical adjacent correction method as claimed in claim 1 is characterized in that, described graphic parameter according to the acquisition of the resolution chart on mask resolution chart also comprises: form resolution chart on mask.
6. optical adjacent correction method as claimed in claim 1 is characterized in that, the graphic parameter that described exposure forms comprises: before the development, the image that forms on the photoresist is measured, obtained the corresponding value of graphic parameter with described resolution chart.
7. optical adjacent correction method as claimed in claim 1, it is characterized in that, the graphic parameter that described exposure forms comprises: the photoresist after the exposure is developed, measure formed image on the wafer, obtain the corresponding value of graphic parameter with described resolution chart.
8. optical adjacent correction method as claimed in claim 1 is characterized in that, the graphic parameter that described acquisition exposure forms comprises: each graphic parameter of collecting the exposure formation that is no less than 1000.
9. optical adjacent correction method as claimed in claim 1 is characterized in that, the graphic parameter that described acquisition exposure forms comprises: in 65nm technology, and each graphic parameter of collecting the exposure formation that is no less than 600.
10. optical adjacent correction method as claimed in claim 1 is characterized in that, described setting threshold is 2nm.
11. optical adjacent correction method as claimed in claim 1 is characterized in that, also comprises: verify described correction factor.
12. optical adjacent correction method as claimed in claim 11, it is characterized in that, described checking correction factor comprises: when adopting the graphic parameter of described resolution chart to carry out photoetching, obtain simulated data, the difference of the graphic parameter that more described simulated data and described exposure form, wherein, with the corresponding described correction factor of the difference of minimum be best correction factor, the graphic parameter of described resolution chart is to adopt the optical near-correction modeling corresponding with the scanning form of described exposure employing to obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102075172A CN101750878B (en) | 2008-12-22 | 2008-12-22 | optical proximity correction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102075172A CN101750878B (en) | 2008-12-22 | 2008-12-22 | optical proximity correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101750878A CN101750878A (en) | 2010-06-23 |
| CN101750878B true CN101750878B (en) | 2011-12-07 |
Family
ID=42478013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102075172A Expired - Fee Related CN101750878B (en) | 2008-12-22 | 2008-12-22 | optical proximity correction method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101750878B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102955363B (en) * | 2011-08-19 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | Optical proximity correction online monitoring method |
| US8762900B2 (en) * | 2012-06-27 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for proximity correction |
| CN103631084B (en) * | 2012-08-29 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | Optical adjacent correction method |
| CN103631085B (en) * | 2012-08-29 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | The bearing calibration of optical proximity correction model |
| CN104570585B (en) * | 2013-10-23 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | Optical adjacent correction method |
| CN104614930B (en) * | 2013-11-05 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | Establish method, the method for optical adjacent calibration ownership goal figure of OPC model |
| CN105573048B (en) * | 2014-10-13 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of optical proximity correction model |
| CN105069232B (en) * | 2015-08-11 | 2018-06-01 | 上海华虹宏力半导体制造有限公司 | Optics closes on the convolution accelerated method in correcting |
| CN115185165B (en) * | 2022-09-13 | 2023-01-06 | 全芯智造技术有限公司 | Construction method of assistant model, optical correction method and device and terminal |
| CN117710270A (en) * | 2024-02-04 | 2024-03-15 | 全智芯(上海)技术有限公司 | Method for free-scale optical proximity correction, electronic device and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472108B1 (en) * | 2000-10-10 | 2002-10-29 | United Microelectronics Corp. | Optical proximity correction method |
| US6643616B1 (en) * | 1999-12-07 | 2003-11-04 | Yuri Granik | Integrated device structure prediction based on model curvature |
| US7418693B1 (en) * | 2004-08-18 | 2008-08-26 | Cadence Design Systems, Inc. | System and method for analysis and transformation of layouts using situations |
-
2008
- 2008-12-22 CN CN2008102075172A patent/CN101750878B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6643616B1 (en) * | 1999-12-07 | 2003-11-04 | Yuri Granik | Integrated device structure prediction based on model curvature |
| US6472108B1 (en) * | 2000-10-10 | 2002-10-29 | United Microelectronics Corp. | Optical proximity correction method |
| US7418693B1 (en) * | 2004-08-18 | 2008-08-26 | Cadence Design Systems, Inc. | System and method for analysis and transformation of layouts using situations |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101750878A (en) | 2010-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101750878B (en) | optical proximity correction method | |
| CN107851315B (en) | Apparatus and method for predicting defect printability at wafer level | |
| US6634018B2 (en) | Optical proximity correction | |
| JP5334956B2 (en) | System and method for performing mask verification using an individual mask error model | |
| KR101124919B1 (en) | Method of determining exposure parameter, exposure method, method of manufacturing device and recording medium | |
| CN101937171B (en) | Method for building optical proximity correction model, optical proximity correction method and mask | |
| US20040199349A1 (en) | Automatic calibration of a masking process simulator | |
| US20110090329A1 (en) | Method for emulation of a photolithographic process and mask inspection microscope for performing the method | |
| KR20080033897A (en) | Method for mask inspection for mask design and mask production | |
| CN112180677B (en) | Modeling method and modeling system of optical proximity correction model | |
| KR100725170B1 (en) | System And Method For Fabricating Photomask | |
| CN102103324A (en) | Optical proximity effect correction method | |
| CN111386500B (en) | Method for identifying a microlithographic mask | |
| CN113990770B (en) | Wafer detection method and detection device | |
| KR102127300B1 (en) | Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography | |
| US7207030B2 (en) | Method for improving a simulation model of photolithographic projection | |
| US7093226B2 (en) | Method and apparatus of wafer print simulation using hybrid model with mask optical images | |
| US20060195808A1 (en) | Method for correcting the optical proximity effect | |
| US7930654B2 (en) | System and method of correcting errors in SEM-measurements | |
| CN113219784A (en) | Method for obtaining optimal object plane of mask, optical proximity correction method and mask | |
| TWI454939B (en) | Resist pattern calculation method and calculation program storage medium | |
| KR101095062B1 (en) | Method for verifing of optical proximity correction | |
| KR101090473B1 (en) | Method for correcting optical proximity effect | |
| CN116736626B (en) | Optical proximity correction method, device, equipment and computer readable storage medium | |
| EP3796088A1 (en) | Method and apparatus for lithographic process performance determination |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20181222 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |