CN101777608B - Method for manufacturing light-emitting diode - Google Patents
Method for manufacturing light-emitting diode Download PDFInfo
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- CN101777608B CN101777608B CN 200910010066 CN200910010066A CN101777608B CN 101777608 B CN101777608 B CN 101777608B CN 200910010066 CN200910010066 CN 200910010066 CN 200910010066 A CN200910010066 A CN 200910010066A CN 101777608 B CN101777608 B CN 101777608B
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Abstract
The invention provides a method for manufacturing a light-emitting diode. The method is as follows: a luminescent layer, a positive wiring electrode and a negative wiring electrode orderly grow on the substrate. The invention is characterized by comprising the following steps: vapor-depositing a metal layer on the upper surface of the luminescent layer or orderly vapor-depositing a metal layer and a dielectric layer on the upper surface of the luminescent layer; etching off the dielectric layer with ammonium fluoride etching solution, phosphoric acid etching solution, hydrofluoric acid etching solution or aqua regia; etching off the metal layer with aqua regia, hydrochloric acid or nitric acid; and finally, manufacturing the positive wiring electrode and the negative wiring electrode, and cutting into a chip. The method destroys the original semiconductor surface smoothness by utilizing the interactions between the metal and the semiconductor surface in the process of high temperature annealing, thereby achieving the goal of surface roughening and enhancing the luminous efficiency of the light-emitting diode.
Description
Technical field
The invention belongs to technical field of semiconductor device, particularly a kind of manufacture method of light-emitting diode chip for backlight unit, particularly a kind of manufacture method with light-emitting diode of surface coarsening structure.
Technical background
Light-emitting diode has the plurality of advantages such as power saving, environmental protection and life-span length.The whole world is in the epoch of energy scarcity at present, so the various preparation methods of light-emitting diode are widely studied.Surface coarsening is widely used as a kind of a kind of means that improve the device luminous efficiency.
The nitrogen face (N face) (42) by described LED mentioned in the Chinese patent " through efficient gallium nitride base light emitting two utmost points of surface coarsening " (CN 200380110945) is extracted and the surface of described N face (42) is roughened and forms one or more hexagon conical surfaces.Described coarse surface has reduced the generation that repeats in the light reflection of described LED inside, and therefore extracts more light in described LED outside.Alligatoring is carried out by anisotropic etching in the described surface of described N face (42), and described etching comprises dry-etching or photic chemistry (PEC) etching.
Although can realize the control of good alligatoring figure in the above-mentioned patent, use dry etching or the method for photic chemical etching all to need mask is carried out on the surface of alligatoring, in order to erode away needed figure.This technology is higher to the requirement of equipment and process in addition, and production cost is larger, is not easy control
At document Y.Ohba and A.Hatano, J.Crystal.Growth 145,214 (1994). in mention the alligatoring that the method for utilizing MOCVDD realizes the N-GaN surface, but because the existence of Mg memory effect, will produce larger impact to active area, affect the service behaviour of device.
In US3739217, mentioned the method on multiple alligatoring GaP surface, comprising methods such as mask, sandblast, chemical corrosions, although above-mentioned several methods can realize the alligatoring on GaP surface, but these methods are not easy to realize the control of surface coarsening figure on the one hand, and in coarsening process the GaP surface are also produced some destructions.
Summary of the invention
For the technological deficiency that prior art exists, the present invention is intended to propose a kind of semiconductor surface coarsening technique fairly simple, that be easy to control, and this technology can make the brightness of light-emitting diode be significantly improved.
Technical method of the present invention is successively light-emitting layer grows and positive and negative two link electrodes on substrate, it is characterized in that by the upper surface evaporation layer of metal layer at luminescent layer, the again interaction by metal in the high-temperature annealing process and semiconductor surface, destroy original semiconductor surface planarization, thereby realize the purpose of surface coarsening.
The technical scheme of the manufacture method of a kind of light-emitting diode that the present invention proposes: at first the upper surface at luminescent layer covers the layer of metal layer, then evaporation one deck dielectric layer on metal level, next carries out the certain hour high annealing, erode described dielectric layer with ammonium fluoride etchant, phosphoric acid, hydrofluoric acid corrosive liquid or chloroazotic acid again, erode described metal level with chloroazotic acid, hydrochloric acid or nitric acid again, carry out at last the making of positive and negative link electrode and cut into chip; Perhaps at the upper surface evaporation layer of metal layer of luminescent layer, then carry out the certain hour high annealing, erode described metal level with chloroazotic acid, hydrochloric acid or nitric acid again, carry out at last the making of positive and negative link electrode and cut into chip.
The material of described metal level is selected from a kind of among Au, Sn, Ge, Be, Ti, Al or the In or the wherein alloy of two kinds of metals, for example Au, AuSn, AuGe, AuBe, Al or In; The thickness of described metal level is 100～30000
The material of described dielectric layer is selected from silicon dioxide, silicon nitride or indium tin oxide; The thickness of described dielectric layer is 200～2000
Described annealing temperature is between 220-600 ℃, and described annealing time is between 3～20 minutes minutes;
Do not destroy under the prerequisite of epitaxial structure in assurance, can utilize on the one hand simple method to realize the alligatoring on semiconductor light emitting layer surface, can realize on the other hand the good control of surface coarsening effect, the brightness of light-emitting diode is significantly improved.
Embodiment
Embodiment 1:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 1000 dusts of epitaxial wafer
Thick Au metal level;
(3) epitaxial wafer that has covered metal level is carried out annealing in process under 600 ℃ temperature, annealing time is 1 minute;
(4) utilize chloroazotic acid to remove the Au metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(5) make respectively positive and negative two contact electrodes;
(6) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 2:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 10000 dusts of epitaxial wafer
Thick AuSn metal level;
(3) epitaxial wafer that has covered metal level is carried out annealing in process under 320 ℃ temperature, annealing time is 20 minutes;
(4) utilize chloroazotic acid to remove the AuSn metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(5) make respectively positive and negative two contact electrodes;
(6) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 3:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 100 dusts of epitaxial wafer
Thick AuBe metal level;
(3) at surperficial evaporation one deck 2000 dusts of metal level
Thick silicon dioxide (SiO
2) dielectric layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 500 ℃ temperature, annealing time is 5 minutes;
(5) utilize ammonium fluoride etchant (BOE) with silicon dioxide (SiO
2) the dielectric layer removal;
(6) utilize chloroazotic acid to remove the AuBe metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(7) make respectively positive and negative two contact electrodes;
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 4:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 4000 dusts of epitaxial wafer
Thick AuGe metal level;
(3) at surperficial evaporation one deck 200 dusts of metal level
Thick silicon nitride medium layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 380 ℃ temperature, annealing time is 10 minutes;
(5) utilize phosphoric acid (H
3PO
4) the surperficial silicon nitride medium layer of removal;
(6) utilize chloroazotic acid to remove the AuGe metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(7) make respectively positive and negative two contact electrodes;
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 5:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 500 dusts of epitaxial wafer
Thick TiAu metal level;
(3) at surperficial evaporation one deck 800 dusts of metal level
Thick SiO
2Dielectric layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 500 ℃ temperature, annealing time is 3 minutes;
(5) utilize hydrofluoric acid (HF) corrosive liquid with silicon dioxide (SiO
2) the dielectric layer removal;
(6) utilize chloroazotic acid to remove the TiAu metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(7) make respectively positive and negative two contact electrodes;
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 6:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 30000 dusts of epitaxial wafer
Thick Au metal level;
(3) at surperficial evaporation one deck 1500 dusts of metal level
Thick silicon dioxide (SiO
2) dielectric layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 550 ℃ temperature, annealing time is 3 minutes;
(5) utilize hydrofluoric acid (HF) corrosive liquid with silicon dioxide (SiO
2) the dielectric layer removal;
(6) utilize chloroazotic acid to remove the Au metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(7) make respectively positive and negative two contact electrodes;
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 7:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 5000 dusts of epitaxial wafer
Thick Al metal level;
(3) at surperficial evaporation one deck 400 dusts of metal level
Thick silicon dioxide (SiO
2) dielectric layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 300 ℃ temperature, annealing time is 3 minutes;
(5) utilize hydrofluoric acid (HF) corrosive liquid with silicon dioxide (SiO
2) the dielectric layer removal;
(6) utilize hydrochloric acid to remove the Al metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface;
(7) make respectively positive and negative two contact electrodes;
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Embodiment 8:
(1) at Grown one deck luminescent layer, produces LED epitaxial slice;
(2) at surperficial evaporation one deck 20000 dusts of epitaxial wafer
Thick In metal level;
(3) at surperficial evaporation one deck 1000 dusts of metal level
Thick indium tin oxide (ITO) dielectric layer;
(4) epitaxial wafer that has covered metal level and dielectric layer is carried out annealing in process under 220 ℃ temperature, annealing time is 20 minutes;
(5) utilize the chloroazotic acid corrosive liquid that the indium tin oxide dielectric layer is removed;
(6) utilize nitric acid to remove the In metal level of epitaxial wafer surface coverage, so just realized the roughening treatment to LED surface,
(7) make respectively positive and negative two contact electrodes,
(8) epitaxial wafer is cut into light-emitting diode chip for backlight unit.
Claims (2)
1. the manufacture method of a light-emitting diode, successively light-emitting layer grows and positive and negative two link electrodes on substrate, it is characterized in that at luminescent layer upper surface evaporation layer of metal layer, evaporation is annealed after finishing again, erodes described metal level with chloroazotic acid, hydrochloric acid or nitric acid after the annealing;
The material of described metal level is selected from a kind of among Au, Sn, Ge, Be, Ti, Al or the In or the alloy of two kinds of metals wherein;
The thickness of described metal level is 100～30000
Described annealing temperature is 220～600 ℃, and annealing time is 3～20 minutes.
2. the manufacture method of a kind of light-emitting diode according to claim 1, it is characterized in that at described metal level growth one dielectric layer, erode described dielectric layer with ammonium fluoride etchant, phosphoric acid, hydrofluoric acid corrosive liquid or chloroazotic acid after the annealing, erode described metal level with chloroazotic acid, hydrochloric acid or nitric acid again;
The thickness of described dielectric layer is 200～2000
Described dielectric layer material is selected from silicon dioxide, silicon nitride or indium tin oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910010066 CN101777608B (en) | 2009-01-09 | 2009-01-09 | Method for manufacturing light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910010066 CN101777608B (en) | 2009-01-09 | 2009-01-09 | Method for manufacturing light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101777608A CN101777608A (en) | 2010-07-14 |
| CN101777608B true CN101777608B (en) | 2013-03-06 |
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|---|---|---|---|
| CN 200910010066 Active CN101777608B (en) | 2009-01-09 | 2009-01-09 | Method for manufacturing light-emitting diode |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012119286A1 (en) * | 2011-03-07 | 2012-09-13 | 山东大学 | Photo-assisted method for wet roughening a red light led gallium phosphide window layer |
| CN111354843A (en) * | 2020-03-06 | 2020-06-30 | 山西中科潞安紫外光电科技有限公司 | Preparation method for ITO surface roughening |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739217A (en) * | 1969-06-23 | 1973-06-12 | Bell Telephone Labor Inc | Surface roughening of electroluminescent diodes |
| US6091085A (en) * | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| CN101162748A (en) * | 2006-10-13 | 2008-04-16 | 杭州士兰明芯科技有限公司 | Method for improving luminance brightness of chip at the axial direction |
-
2009
- 2009-01-09 CN CN 200910010066 patent/CN101777608B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739217A (en) * | 1969-06-23 | 1973-06-12 | Bell Telephone Labor Inc | Surface roughening of electroluminescent diodes |
| US6091085A (en) * | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| CN101162748A (en) * | 2006-10-13 | 2008-04-16 | 杭州士兰明芯科技有限公司 | Method for improving luminance brightness of chip at the axial direction |
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|---|---|
| CN101777608A (en) | 2010-07-14 |
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