CN101788760B - Optimization method of optical proximity correction rule - Google Patents
Optimization method of optical proximity correction rule Download PDFInfo
- Publication number
- CN101788760B CN101788760B CN200910045895XA CN200910045895A CN101788760B CN 101788760 B CN101788760 B CN 101788760B CN 200910045895X A CN200910045895X A CN 200910045895XA CN 200910045895 A CN200910045895 A CN 200910045895A CN 101788760 B CN101788760 B CN 101788760B
- Authority
- CN
- China
- Prior art keywords
- pattern
- correction rule
- corrected
- target domain
- domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses an optimization method of an optical proximity correction rule, comprising the following steps of: providing a basic graphics unit; arranging and combining one or a plurality of basic graphics units of the same kind or different kinds, and acquiring a preliminary domain graphics; acquiring the target domain graphics according to the traditional correction rule, carrying out the optical proximity correction on each target domain graphics and acquiring a pattern to be corrected; and correcting the pattern to be corrected in the target domain graphics and storing the optimized correction rule. The invention provides a large number of patterns with variety and randomness by the preliminary domain graphics consisting of the basic graphics unit and acquires the set of the correction rule corresponding to various patterns based on the optical proximity correction of the preliminary domain graphics; therefore, the optimization of the traditional correction rule is realized, and the time and the labor in the actual correction course are greatly saved.
Description
Technical field
The present invention relates to the optimization method of optical near-correction technology, particularly optical proximity correction rule.
Background technology
Along with the high speed development of IC design, how to dwindle the photoetching of domain figure later distortion and deviation, suppress the negative effect of optical proximity effect, and then improve the yield rate of chip production, play a part crucial to the development of manufacture of microchips.To this problem, at present a kind of method of generally adopting of industry is an optical near-correction, and it is through the shape that changes the original layout figure reduce to make public deviation of the litho pattern that obtained.
In the prior art, the process of optical near-correction generally comprises: the original layout figure is carried out optical analogy, obtain the mimic diagram of its image pattern of simulation; Through contrasting mimic diagram and the original layout figure that is obtained; To site error wherein not the pattern in allowed band mark; And adopt certain calibration principle to proofreading and correct with the pattern of said labeling position in the original layout figure, until the mimic diagram that obtains to adhere to specification.Because the layout style of original layout figure changes with the deviser, has diversity, directly the original layout figure is carried out the optics neighbour and proofread and correct and to obtain to wait in a large number the pattern that marks and proofread and correct usually, thereby make trimming process spend great amount of manpower and time.For this reason; Industry also has some methods that calibration principle is improved of proposition; For example: through in advance the ingredient of simple patterns such as line segment, line end, turning being set correction rule; Make calibration principle not only comprise some simple bearing calibrations, can also comprise the set of the correction rule that these are special.When similar pattern occurring in the original layout, the said correction rule corresponding with pattern is applied in the actual trimming process, to reduce the time of actual trimming process, proofread and correct efficient thereby improve, practice thrift cost.
Why selecting in advance the ingredient of simple patterns such as line end to be set correction rule, is because ingredients such as line end often occur in the pattern of domain figure; And owing to be positioned at the edge of pattern, it is relatively more responsive to optics, is easy to generate optical effect; Often marked out with to be corrected; Yet in actual domain figure, the optical effect of each pattern or its ingredient is not only relevant with himself shape, also relates to the restriction in its peripheral pattern or space; Therefore existing these correction rules are for actual trimming process; Too simple, make and still need carry out a large amount of adjustment in the actual trimming process, or the optical effect that derives owing to its application proofreaied and correct, therefore be difficult to even can't play at all the effect of actual trimming process time of saving.
Summary of the invention
The technical matters that the present invention will solve is that the correction rule that is adopted in the existing optics neighbour trimming process is too simple, makes and in actual trimming process, still need further adjust and proofread and correct, waste great amount of time, manpower and energy.
For addressing the above problem, the invention provides a kind of optimization method of optical proximity correction rule, comprising: the fundamental figure unit is provided; Through the permutation and combination of identical type or different types of one or more fundamental figures unit, obtain preparation domain figure; According to original correction rule, obtain target domain figure, and each said target domain figure is carried out optical near-correction, obtain pattern wherein to be corrected; Pattern to be corrected in the said target domain figure is carried out optical near-correction, preserve the correction rule of optimizing.
Optional, the said fundamental figure unit that provides comprises: two-dimentional test pattern is split.
Optional, the said fundamental figure unit that provides comprises: square is split, obtain big square block, little square block, 1/2nd rectangular blocks, 1/4th rectangular blocks and contain the interior angle segment.
Optional, said permutation and combination through the fundamental figure unit obtains preparation domain figure, comprising: said fundamental figure unit is numbered successively; The numbering of said fundamental figure unit is carried out any permutation and combination; According to the permutation and combination of said numbering, obtain the preparation domain figure that is constituted with the pairing fundamental figure of numbering unit.
Optional; Said according to original correction rule; Each target domain figure is carried out optical near-correction; Pattern to be corrected comprises in the acquisition target domain figure: each said preparation domain figure is carried out DRC, the pattern that does not meet design rule in the said preparation domain figure is adjusted, obtain target domain figure; Said target domain graphical application optical model is simulated, and, target domain figure is proofreaied and correct according to original correction rule; Relatively each said target domain figure and said mimic diagram obtain pattern to be corrected in the said target domain figure.
Optional, said design rule comprises according to process conditions, and is regular to the DRC that design drawing is revised.
Optional, confirm applied optical model according to the process conditions of reality.
Optional, said pattern is to be closed the zone that curve surrounds.
Optional; Said comparison each target domain figure and mimic diagram; Obtain pattern to be corrected in the target domain figure; Comprise: compare the site error of each pattern in said target domain figure and said mimic diagram, when the site error between two said patterns is not in allowed band, be said pattern to be corrected.
Optional; Said pattern to be corrected in the target domain figure is carried out optical near-correction; Preserve the correction rule of optimizing, comprising: each said pattern to be corrected is carried out optical near-correction, obtain mimic diagram; The site error of corresponding pattern in more said pattern to be corrected and the mimic diagram, until said error in allowed band; Preserve the corresponding correction rule of said pattern to be corrected.
Optional, the correction rule of said optimization comprises the set of the said correction rule corresponding with all said patterns to be corrected.
Optional, said correction rule comprises: to the description of said pattern to be corrected, be used for obtaining said pattern to be corrected at the domain figure; And the aligning step that said pattern to be corrected is carried out.
Compared to prior art; Embodiment of the present invention provides a large amount of preparation domain figures that are made up of the fundamental figure unit; Correction through based on preparation domain figure obtains the set of the pairing correction rule of different pattern, and then realizes the optimization to original correction rule.In addition, because said pattern has One's name is legion, occurs at random, and taken into full account and the influencing each other of peripheral pattern and space, therefore the set of said correction rule has comprised possibility as much as possible, and applicability is wide.But in actual trimming process, be applied to the set repeated multiple times of said correction rule in addition, thereby saved the time and the manpower of a large amount of actual trimming processes.
Description of drawings
Fig. 1 is the design drawing of the byte units of a static RAM;
Fig. 2 is the synoptic diagram that the domain figure to Fig. 1 carries out the analog result that the optical model simulation obtained;
Fig. 3 is the schematic flow sheet of the optimization method embodiment of optical proximity correction rule of the present invention;
Fig. 4 is the structural representation of fundamental figure unit embodiment in the optimization method of optical proximity correction rule of the present invention;
Fig. 5 is the optimization method embodiment of optical proximity correction rule of the present invention, the schematic flow sheet of step D2 among Fig. 3;
Fig. 6 is the optimization method embodiment of optical proximity correction rule of the present invention, the schematic flow sheet of step D3 among Fig. 3;
Fig. 7 is the structural representation of preparation domain figure in the optimization method specific embodiment of optical proximity correction rule of the present invention;
Fig. 8 is the structural representation that Fig. 7 is carried out the preparation domain figure of the process adjustment that DRC obtained;
Fig. 9 is the structural representation that Fig. 8 is carried out the preparatory correction domain figure that optical near-correction obtained;
Figure 10 carries out the structural representation that optical model is simulated the mimic diagram that is obtained to Fig. 9;
Figure 11 is the synoptic diagram of pattern position error described in Fig. 7 and Figure 10.
Embodiment
Because constantly dwindling of device size, light more and more can not be ignored the influence of actual domain figure.With reference to figure 1 and Fig. 2, Fig. 1 is the design drawing of the byte units of a static RAM, the analog result of Fig. 2 for it being carried out obtained after the optical model simulation.Comparison diagram 1 and Fig. 2 in the a-quadrant, can find, owing to the effect of optics in the actual manufacturing process and chemical effect, interior angle can passivation become circle, and the area that interior angle increases makes that the interior angle passivation is more serious, and this has just had influence on the transistorized channel length of vicinity; And in the B zone, the little turning on the grid layer pattern is too little from the space of diffusion zone, and the corner passivation that cause at the turning also can have influence on transistorized width.
The present invention obtains the corresponding correction rule of different pattern through based on being proofreaied and correct by the formed multiple preparation domain figure in fundamental figure unit, and then can the set of the correction rule that is obtained be applied to the trimming process of actual domain figure.Because said preparation domain figure can comprise a large amount of patterns; Has diversity and randomness; And taken into full account influencing each other of pattern and peripheral pattern or space; Thereby the set of the correction rule that is obtained can cover the situation in the actual domain figure as much as possible, but in actual trimming process, is applied to the set repeated multiple times of said correction rule in addition, thereby has saved the time and the manpower of a large amount of actual trimming processes.
Below in conjunction with accompanying drawing and specific embodiment, embodiment of the present invention is described further.
With reference to figure 3, embodiment of the present invention provides a kind of optimization method of optical proximity correction rule, comprising: step D1 provides the fundamental figure unit; Step D2 through the permutation and combination of identical type or different types of one or more fundamental figures unit, obtains preparation domain figure; Step D3 according to original correction rule, obtains target domain figure, and each said target domain figure is carried out optical near-correction, obtains pattern wherein to be corrected; Step D4 carries out optical near-correction to pattern to be corrected in the said target domain figure, preserves the correction rule of optimizing.
Specifically, the multiple fundamental figure unit among the step D1 can be the split cells of two-dimentional test pattern.Wherein, two-dimentional test pattern can be the elementary cell of composition, for example square, rectangle etc.The kind of fundamental figure unit is many more, and the pattern that can make up is also just many more, but also will make follow-up pending data bulk become big more simultaneously.Since optical effect on the edge of and the corner part bit comparison obvious, in the process that splits, can the fundamental figure unit be designed with reference to the pattern that often occurs easily in the domain figure.For example, with reference to figure 4, can obtain 18 kinds of different fundamental figure unit through square is split, wherein dash area is said fundamental figure unit.Big square block, little square block, 1/2nd rectangular blocks, 1/4th rectangular blocks have been comprised in these 18 kinds of fundamental figure unit respectively and have contained the interior angle segment that the form of other fractionation can obtain through one or more one or more combination in these 18 kinds of fundamental figure unit.
The fundamental figure unit is split by test pattern and gets, and test pattern is the elementary cell that constitutes pattern, therefore through the assembled arrangement to identical type or different types of, one or more fundamental figure unit, can constitute pattern arbitrarily.
Among the step D2 fundamental figure unit is carried out permutation and combination to obtain preparation domain figure; In a kind of concrete embodiment; Can comprise: select the kind of suitable fundamental figure unit, and the number of every kind of fundamental figure unit, obtain needed all fundamental figure unit; It is carried out permutation and combination, obtain multiple preparation domain figure.
In other specific embodiment,, can comprise with reference to figure 5: step S201, number said fundamental figure unit successively; Step S202 carries out any permutation and combination with the numbering of said fundamental figure unit; Step S203 according to the permutation and combination of said numbering, obtains the preparation domain figure that is constituted with the pairing fundamental figure of numbering unit.Therefore because the permutation and combination of numbering has randomness, by can having various types of patterns with preparation domain figure that the corresponding fundamental figure unit of numbering is constituted, and said preparation domain figure also has randomness.
Next, the preparation domain figure execution in step D3 to being obtained.
In the specific embodiment of the invention, with reference to figure 6, step D3 can comprise: step S301, each said preparation domain figure is carried out DRC, and the pattern that does not meet design rule in the said preparation domain figure is adjusted, obtain target domain figure; Step S302 simulates said target domain graphical application optical model, and according to original correction rule, target domain figure is proofreaied and correct; Step S303, relatively each said target domain figure and said mimic diagram obtain pattern to be corrected in the said target domain figure.
Wherein, design rule (DRC) is according to process conditions, a kind of rule that design drawing is revised.Specifically, can comprise the inspection of simple DRC rule, whether correct like width, spacing, relation of inclusion etc., also can comprise some complicated DRC rule inspections, like the antenna rule, current direction is regular and wire density rule etc.
Step S301 obtains not meet the design rule pattern through DRC, and it is adjusted, and for example, whether accords with production requirement of the spacing between inspection line and line, line and through hole, through hole and the through hole if do not meet, is adjusted spacing.The process of particular exam can realize through the DRC scrutiny program of carrying out in the conventional physical verification software.
Then, execution in step S302.Wherein, at first, confirm applied optical model, then, said target domain figure is simulated, obtain the corresponding simulating figure through using this optical model according to the process conditions of reality; Then, according to original correction rule said target domain figure is proofreaied and correct.Said mimic diagram has characterized hypothesis and this target domain figure has been carried out exposure image, its obtainable image pattern, the just pairing mimic diagram of target domain figure.The process of utilizing original correction rule that said target domain figure is proofreaied and correct; Comprise: for example for adding that at line end capitate is to reduce the degree that line end shortens; The turning that perhaps will comprise interior angle reverts to original corner, makes the passivation of interior angle can not have influence on critical size of device etc.
Next, execution in step S303.Specifically, be closed zone that curve surrounded as a pattern with each, relatively the site error of each pattern in said target domain figure and said mimic diagram.When the site error between two patterns is not in allowed band; These patterns in the said target domain figure are marked out; The pattern that these marked out can't detect it, also can't proofread and correct it and produce just because of original correction rule; Therefore the pattern that these marked has out reflected part that original correction rule can't cover, the place that also original just correction rule need be optimized.Under condition of different, can specifically set said allowed band according to tool parameters, actual demand, process conditions etc.
Next, obtained after the pattern to be corrected of said target domain figure, in step D4; According to said pattern to be corrected, each said pattern to be corrected is carried out optical near-correction, obtain mimic diagram; The site error of corresponding pattern in more said pattern to be corrected and the mimic diagram; In allowed band, at this moment, preserve the corresponding correction rule of said pattern to be corrected until said error.The correction rule of said optimization comprises the set of the correction rule that all said patterns to be corrected are corresponding.
Wherein, said correction rule comprises the description to said pattern to be corrected, be used for obtaining said pattern to be corrected at the domain figure, and the aligning step that said pattern to be corrected is carried out.
In a specific embodiment of the optimization method of optical proximity correction rule of the present invention, at first, obtain a preparation domain figure 400 according to the combination of fundamental figure unit, with reference to figure 7.
Then, it is carried out DRC and adjustment, obtain target domain figure 500, with reference to figure 8.Wherein, the pattern 401 in the preparation domain figure 400 is carried out DRC, find to exist such problem: the distance between two pattern turnings is less than the setting value of design rule.Therefore it is adjusted, the distance that increases between two pattern corners makes its requirement of satisfying design rule, obtains as 501 described patterns.
According to original correction rule, target domain figure 500 is carried out the optics neighbour proofread and correct, obtain preparatory correction domain figure 600, with reference to figure 9, and mimic diagram 700, with reference to Figure 10.Contrast target domain figure 500 and mimic diagram 700, the pattern that site error is wherein exceeded allowed band marks, with reference to Figure 11.Specifically; According to the coordinate of pattern 502 (Fig. 8) in the target domain figure 500, the pattern 701 (Figure 10) that acquisition has corresponding coordinate in mimic diagram 700, the site error of Comparing patterns 502 and pattern 701; For example with reference to Figure 11; Whether Comparing patterns interval error 801 exceeds allowed band, when exceeding allowed band, in target domain figure 500, pattern 502 is marked.
With respect to prior art; The above-mentioned embodiment of the present invention provides a large amount of preparation domain figures that are made up of the fundamental figure unit; Through optical near-correction based on preparation domain figure; Obtain the set of the pairing correction rule of different pattern, and then realize optimization original correction rule.And, because the randomness of said pattern, and One's name is legion, and taken into full account and the influencing each other of peripheral pattern and space, therefore the set of said correction rule has wider applicability.But in actual trimming process, be applied to the set repeated multiple times of said correction rule in addition, thereby saved plenty of time and manpower, the energy of actual trimming process.
Though the present invention through the preferred embodiment explanation as above, these preferred embodiments are not in order to limit the present invention.Those skilled in the art is not breaking away from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (10)
1. the optimization method of an optical proximity correction rule is characterized in that, comprising:
The fundamental figure unit is provided;
Through the permutation and combination of identical type or different types of one or more fundamental figures unit, obtain preparation domain figure;
Obtain target domain figure, according to original correction rule, each said target domain figure is carried out optical near-correction, obtain pattern wherein to be corrected, said pattern to be corrected is to be closed the curve region surrounded in the said target domain figure;
Pattern to be corrected in the said target domain figure is carried out optical near-correction, preserve the correction rule of optimizing;
Said according to original correction rule, each target domain figure is carried out optical near-correction, pattern to be corrected comprises in the acquisition target domain figure:
Each said preparation domain figure is carried out DRC, the pattern that does not meet design rule in the said preparation domain figure is adjusted, obtain target domain figure;
Said target domain graphical application optical model is simulated, obtain the corresponding simulating figure, and, target domain figure is proofreaied and correct according to original correction rule;
As a pattern, relatively the site error of each pattern in said target domain figure and said mimic diagram obtains pattern to be corrected in the said target domain figure with zone that each closed curve was surrounded.
2. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, the said fundamental figure unit that provides comprises: two-dimentional test pattern is split.
3. the optimization method of optical proximity correction rule as claimed in claim 1; It is characterized in that; The said fundamental figure unit that provides comprises: square is split, obtain big square block, little square block, 1/2nd rectangular blocks, 1/4th rectangular blocks and contain the interior angle segment.
4. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, said permutation and combination through the fundamental figure unit obtains preparation domain figure, comprising:
Said fundamental figure unit is numbered successively;
The numbering of said fundamental figure unit is carried out any permutation and combination;
According to the permutation and combination of said numbering, obtain the preparation domain figure that is constituted with the pairing fundamental figure of numbering unit.
5. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, said design rule comprises according to process conditions, and is regular to the DRC that design drawing is revised.
6. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, confirms applied optical model according to the process conditions of reality.
7. the optimization method of optical proximity correction rule as claimed in claim 1; It is characterized in that; The site error of each pattern of said comparison in said target domain figure and said mimic diagram obtains pattern to be corrected in the said target domain figure, comprising: the site error that compares each pattern in said target domain figure and said mimic diagram; When the site error between two said patterns is not in allowed band, be said pattern to be corrected.
8. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, said pattern to be corrected in the target domain figure is proofreaied and correct; Preserve the correction rule of optimizing; Comprise: according to said pattern to be corrected, each said pattern to be corrected is carried out optical near-correction, obtain mimic diagram; The site error of corresponding pattern in more said pattern to be corrected and the mimic diagram, until said error in allowed band; Preserve the corresponding correction rule of said pattern to be corrected.
9. the optimization method of optical proximity correction rule as claimed in claim 8 is characterized in that, the correction rule of said optimization comprises the set of the said correction rule corresponding with all said patterns to be corrected.
10. the optimization method of optical proximity correction rule as claimed in claim 1 is characterized in that, the correction rule of said optimization comprises: to the description of said pattern to be corrected, be used for obtaining said pattern to be corrected at the domain figure; And the aligning step that said pattern to be corrected is carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910045895XA CN101788760B (en) | 2009-01-23 | 2009-01-23 | Optimization method of optical proximity correction rule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910045895XA CN101788760B (en) | 2009-01-23 | 2009-01-23 | Optimization method of optical proximity correction rule |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101788760A CN101788760A (en) | 2010-07-28 |
| CN101788760B true CN101788760B (en) | 2012-07-11 |
Family
ID=42532018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910045895XA Active CN101788760B (en) | 2009-01-23 | 2009-01-23 | Optimization method of optical proximity correction rule |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101788760B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN104698761B (en) * | 2013-12-05 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | OPC model calibration method based on area |
| CN103903290B (en) * | 2014-04-10 | 2016-08-17 | 国家电网公司 | A kind of method of the pattern arrangement combination jumped based on coordinate |
| CN105825036B (en) * | 2016-06-07 | 2019-10-15 | 中国科学院微电子研究所 | A kind of optimization method and system of layout design rules |
| CN106815411B (en) * | 2016-12-27 | 2020-06-09 | 上海集成电路研发中心有限公司 | Modeling method for layout proximity effect of multi-interdigital MOS device |
| CN109188857B (en) * | 2018-09-06 | 2022-02-01 | 中国科学院微电子研究所 | Layout splitting method and splitting system |
| CN112864023B (en) * | 2021-01-07 | 2022-04-29 | 长鑫存储技术有限公司 | Semiconductor mark manufacturing method and semiconductor mark |
| CN116339081B (en) * | 2023-05-24 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | Modeling method, device, equipment and medium of optical proximity correction model |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6425112B1 (en) * | 1999-06-17 | 2002-07-23 | International Business Machines Corporation | Auto correction of error checked simulated printed images |
| CN1506767A (en) * | 2002-12-09 | 2004-06-23 | Asml荷兰有限公司 | Method for detemining photoetching projection parameter, device producing method and device |
| CN1896869A (en) * | 2005-07-14 | 2007-01-17 | Asml荷兰有限公司 | Substrate, lithographic multiple exposure method, machine readable medium |
| WO2007038972A1 (en) * | 2005-09-20 | 2007-04-12 | Freescale Semiconductor, Inc. | Method of making an integrated circuit |
| US7264906B2 (en) * | 2004-03-05 | 2007-09-04 | Lsi Corporation | OPC based illumination optimization with mask error constraints |
| US7281222B1 (en) * | 2004-06-02 | 2007-10-09 | Advanced Micro Devices, Inc. | System and method for automatic generation of optical proximity correction (OPC) rule sets |
| CN101114125A (en) * | 2006-07-28 | 2008-01-30 | 中芯国际集成电路制造(上海)有限公司 | Mixed type optical approximate correcting method based on regular |
-
2009
- 2009-01-23 CN CN200910045895XA patent/CN101788760B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6425112B1 (en) * | 1999-06-17 | 2002-07-23 | International Business Machines Corporation | Auto correction of error checked simulated printed images |
| CN1506767A (en) * | 2002-12-09 | 2004-06-23 | Asml荷兰有限公司 | Method for detemining photoetching projection parameter, device producing method and device |
| US7264906B2 (en) * | 2004-03-05 | 2007-09-04 | Lsi Corporation | OPC based illumination optimization with mask error constraints |
| US7281222B1 (en) * | 2004-06-02 | 2007-10-09 | Advanced Micro Devices, Inc. | System and method for automatic generation of optical proximity correction (OPC) rule sets |
| CN1896869A (en) * | 2005-07-14 | 2007-01-17 | Asml荷兰有限公司 | Substrate, lithographic multiple exposure method, machine readable medium |
| WO2007038972A1 (en) * | 2005-09-20 | 2007-04-12 | Freescale Semiconductor, Inc. | Method of making an integrated circuit |
| CN101114125A (en) * | 2006-07-28 | 2008-01-30 | 中芯国际集成电路制造(上海)有限公司 | Mixed type optical approximate correcting method based on regular |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101788760A (en) | 2010-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101788760B (en) | Optimization method of optical proximity correction rule | |
| TWI264058B (en) | Method of correcting mask pattern and method of forming the same | |
| US7784015B2 (en) | Method for generating a mask layout and constructing an integrated circuit | |
| CN101788759B (en) | Method for correcting auxiliary figure with low resolution | |
| CN103543599B (en) | A kind of optical proximity correction method improving line end shortening effect | |
| DE102015108244A1 (en) | METHOD AND SYSTEM FOR GENERATING A CIRCUIT DESIGN, METHOD FOR CALIBRATING AN INSPECTION DEVICE, AND METHOD FOR PROCESS CONTROL AND EARNING MANAGEMENT | |
| CN107450266A (en) | The modification method and system of optical approach effect | |
| CN105825036A (en) | Method and system for optimizing layout design rules | |
| CN106950795A (en) | The forming method of secondary graphics | |
| CN105988300B (en) | method for optical proximity correction | |
| TW200741335A (en) | Method of forming a mask layout and layout formed by the same | |
| CN102385242A (en) | Method and system for manufacturing mask | |
| CN102346800A (en) | Method and device for detecting acceleration design rule | |
| CN106919009A (en) | Figure preprocess method before optical near-correction | |
| WO2007097902A3 (en) | Multi-dimensional analysis for predicting resolution enhancement technology model accuracy | |
| CN105093809B (en) | Enhance the optical adjacent correction method of lithographic process window | |
| CN103376644A (en) | Mask pattern correction method | |
| CN108009316A (en) | OPC modification methods | |
| CN102566322A (en) | Multiple photoetching equipment correcting method | |
| CN105740540A (en) | Method for searching characteristic graphs of layouts in mask design | |
| CN101944065B (en) | Flash memory bad block shielding method based on section | |
| CN102087469A (en) | Optical proximity effect corrective modeling method and generating method of test pattern | |
| CN106707681A (en) | Method for increasing OPC (Optical Proximity Correction) processing accuracy | |
| CN101398613B (en) | Metallic layer circuit board diagram pre-correcting method | |
| US20180189952A1 (en) | Method for processing the lef diagram of a layout |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |