CN101790764A - 用于激光致等离子体euv光源的气体管理系统 - Google Patents
用于激光致等离子体euv光源的气体管理系统 Download PDFInfo
- Publication number
- CN101790764A CN101790764A CN200880105195A CN200880105195A CN101790764A CN 101790764 A CN101790764 A CN 101790764A CN 200880105195 A CN200880105195 A CN 200880105195A CN 200880105195 A CN200880105195 A CN 200880105195A CN 101790764 A CN101790764 A CN 101790764A
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- gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
- Y10S422/906—Plasma or ion generation means
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/897,644 | 2007-08-31 | ||
US11/897,644 US7655925B2 (en) | 2007-08-31 | 2007-08-31 | Gas management system for a laser-produced-plasma EUV light source |
PCT/US2008/009754 WO2009032054A1 (en) | 2007-08-31 | 2008-08-15 | Gas management system for a laser-produced-plasma euv light source |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101790764A true CN101790764A (zh) | 2010-07-28 |
CN101790764B CN101790764B (zh) | 2013-01-23 |
Family
ID=40405917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801051959A Active CN101790764B (zh) | 2007-08-31 | 2008-08-15 | 用于激光致等离子体euv光源的气体管理系统 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7655925B2 (zh) |
EP (1) | EP2181448B1 (zh) |
JP (1) | JP5552051B2 (zh) |
KR (1) | KR101503894B1 (zh) |
CN (1) | CN101790764B (zh) |
TW (1) | TWI369926B (zh) |
WO (1) | WO2009032054A1 (zh) |
Cited By (6)
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CN102681351A (zh) * | 2011-03-08 | 2012-09-19 | Asml荷兰有限公司 | 光刻设备和器件制造方法 |
CN104345569A (zh) * | 2013-07-24 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 极紫外光刻机光源系统及极紫外曝光方法 |
CN104345570A (zh) * | 2013-07-24 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 极紫外光刻机光源系统及极紫外曝光方法 |
CN110799904A (zh) * | 2017-06-23 | 2020-02-14 | Asml荷兰有限公司 | 辐射源模块和光刻设备 |
CN110967937A (zh) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | 操作极紫外光产生装置的方法及极紫外辐射产生装置 |
TWI710859B (zh) * | 2015-07-08 | 2020-11-21 | 荷蘭商Asml荷蘭公司 | 微影廠房、用於產生電磁輻射之源、雷射放大器、及產生輻射之方法 |
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FR2916193B1 (fr) * | 2007-05-18 | 2009-08-07 | Commissariat Energie Atomique | Synthese par pyrolyse laser de nanocristaux de silicium. |
US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
US8115900B2 (en) * | 2007-09-17 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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DE102008041827A1 (de) * | 2008-09-05 | 2010-03-18 | Carl Zeiss Smt Ag | Schutzmodul für EUV-Lithographievorrichtung sowie EUV-Lithographievorrichtung |
DE102008049494A1 (de) * | 2008-09-27 | 2010-04-08 | Xtreme Technologies Gmbh | Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen |
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JP5687488B2 (ja) * | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
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KR101503894B1 (ko) | 2015-03-19 |
US8198615B2 (en) | 2012-06-12 |
US20120305810A1 (en) | 2012-12-06 |
EP2181448A4 (en) | 2012-02-08 |
KR20100057851A (ko) | 2010-06-01 |
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CN101790764B (zh) | 2013-01-23 |
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JP5552051B2 (ja) | 2014-07-16 |
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US8785892B2 (en) | 2014-07-22 |
TWI369926B (en) | 2012-08-01 |
TW200922386A (en) | 2009-05-16 |
US7655925B2 (en) | 2010-02-02 |
US20100140514A1 (en) | 2010-06-10 |
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