CN101817006A - Method for cleaning surface of solar silicon wafer - Google Patents
Method for cleaning surface of solar silicon wafer Download PDFInfo
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- CN101817006A CN101817006A CN 201010129811 CN201010129811A CN101817006A CN 101817006 A CN101817006 A CN 101817006A CN 201010129811 CN201010129811 CN 201010129811 CN 201010129811 A CN201010129811 A CN 201010129811A CN 101817006 A CN101817006 A CN 101817006A
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- silicon wafer
- solar silicon
- pure water
- solar
- rinsing
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Abstract
The invention relates to a method for cleaning the surface of a solar silicon wafer. The method comprises the following steps of: after cutting a crystal bar into the solar silicon wafer and degumming, soaking the solar silicon wafer into 1 to 3 percent solution of hydrofluoric acid; rinsing the solar silicon wafer by using pure water; soaking the solar silicon wafer into 1 to 3 percent solution of nitric acid and introducing pure compressed air to bubble; rinsing the solar silicon wafer by using pure water; ultrasonically cleaning the silicon wafer in 1 to 3 percent silicon slice detergent; and placing the silicon wafer into pure water with the temperature remained between 45 and 70 DEG C to ultrasonically clean. An acid soaking method is adopted and the pure compressed air is introduced to bubble, so that the method has the advantages of rapidly decomposing and stripping metal contaminant and slicing solution on the surface of the solar silicon wafer, greatly improving surface cleanness of the silicon wafer and improving the finished product ratio and the quality of fluffing of the solar silicon wafer.
Description
Technical field
The present invention relates to a kind of method for cleaning surface of solar silicon wafers.
Background technology
At present, the cleaning method of solar silicon wafers is to cut into slices and after coming unstuck at crystal bar, uses the pure water rinsing earlier, then uses the pure water ultrasonic cleaning, in pure water, add cleaning agent then again and carry out ultrasonic wave and clean, promptly finish cleaning through pure water ultrasonic wave rinsing repeatedly more afterwards.This cleaning method is not thorough, causes chemicals, metal impurities, the soda acid on solar silicon wafers surface residual etc. too much, occurs hickie in the time of can making solar silicon wafers making herbs into wool, produces the aberration phenomenon, influences yield rate and product quality.
Summary of the invention
The method for cleaning surface that the purpose of this invention is to provide a kind of solar silicon wafers that can improve the solar silicon wafers surface cleanness.
The technical scheme that the present invention takes is: a kind of method for cleaning surface of solar silicon wafers, it is characterized in that being cut into solar silicon wafers and after coming unstuck at crystal bar, in being 1～3% hydrofluoric acid solution, concentration soaks earlier, then adopt the pure water rinsing, then be placed on concentration and be in 1～3% the citric acid solution and import pure compressed air snare drum bubble limit and soak, adopt the pure water rinsing then again, be to adopt ultrasonic wave to clean in 1～3% the silicon slice detergent in concentration again afterwards, then again after pure water ultrasonic wave rinsing repeatedly, put into temperature at last and remain on 45～70 ℃ pure water and adopt ultrasonic wave to clean and get final product.
Adopt the inventive method, owing to adopted acid soak, and imported pure compressed air bubbling, the metal pickup thing on solar silicon wafers surface and cutting solution are peeled off rapid the decomposition, increase the silicon chip surface cleannes greatly, thereby improved the yield rate and the quality of solar silicon wafers making herbs into wool.
The specific embodiment
The invention will be further described below in conjunction with specific embodiment.
1, cuts into slices and after coming unstuck at crystal bar, in concentration is 1～3% hydrofluoric acid solution, soak more than 3 minutes.
2, then, through the pure water rinsing more than 3 minutes;
3, then, being placed on concentration is in 1～3% citric acid solution, imports pure compressed air snare drum bubble limit and soaks more than 3 minutes;
4, then, again through the pure water rinsing more than 3 minutes;
5, afterwards, be to adopt ultrasonic wave to clean more than 3 minutes in 1～3% the silicon chip cleaning liquid in concentration again;
6, then again through the rinsing of four pure water ultrasonic waves, at every turn more than 3 minutes;
7, last, be placed on and adopt ultrasonic wave to clean in the pure water that temperature remains on 45 ℃～70 ℃ to get final product more than 3 minutes.
Claims (1)
1. the method for cleaning surface of a solar silicon wafers, it is characterized in that being cut into solar silicon wafers and after coming unstuck at crystal bar, in being 1～3% hydrofluoric acid solution, concentration soaks earlier, then adopt the pure water rinsing, then be placed on concentration and be in 1～3% the citric acid solution and import pure compressed air snare drum bubble limit and soak, adopt the pure water rinsing then again, be to adopt ultrasonic wave to clean in 1～3% the silicon slice detergent in concentration again afterwards, then again after pure water ultrasonic wave rinsing repeatedly, put into temperature at last and remain on 45～70 ℃ pure water and adopt ultrasonic wave to clean and get final product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010129811 CN101817006A (en) | 2010-03-22 | 2010-03-22 | Method for cleaning surface of solar silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010129811 CN101817006A (en) | 2010-03-22 | 2010-03-22 | Method for cleaning surface of solar silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101817006A true CN101817006A (en) | 2010-09-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010129811 Pending CN101817006A (en) | 2010-03-22 | 2010-03-22 | Method for cleaning surface of solar silicon wafer |
Country Status (1)
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| CN (1) | CN101817006A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102001715A (en) * | 2010-10-23 | 2011-04-06 | 浙江硅宏电子科技有限公司 | Method for recycling single crystal silicon chip cleaning water |
| CN102062733A (en) * | 2010-12-09 | 2011-05-18 | 浙江昱辉阳光能源有限公司 | Method for detecting surface residues of solar silicon wafer after cleaning |
| CN102500569A (en) * | 2011-10-20 | 2012-06-20 | 高佳太阳能股份有限公司 | Degumming technology for aqueous solution of methanesulfonic acid |
| CN102744230A (en) * | 2012-07-26 | 2012-10-24 | 浙江矽盛电子有限公司 | Cleaning method for dirty and stuck solar silicon chip |
| CN102810602A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for storing silicon wafer to be cleaned |
| CN103419288A (en) * | 2012-05-21 | 2013-12-04 | 浙江晟辉科技有限公司 | Bar saving processing method after wire breaking of multi-wire cutting crystal bar |
| CN103464418A (en) * | 2013-09-18 | 2013-12-25 | 天津市环欧半导体材料技术有限公司 | Semiconductor silicon chip degumming process |
| CN103521473A (en) * | 2013-10-29 | 2014-01-22 | 宁夏银星能源股份有限公司 | Graphite boat cleaning process |
| CN103721968A (en) * | 2012-10-15 | 2014-04-16 | 江苏天宇光伏科技有限公司 | Texturing and cleaning method for improving battery conversion efficiency |
| RU2557752C2 (en) * | 2013-03-22 | 2015-07-27 | Яков Яковлевич Вельц | Ultrasound processing of safety equipment |
| CN106206253A (en) * | 2016-07-01 | 2016-12-07 | 大工（青岛）新能源材料技术研究院有限公司 | A kind of cleaning method of polysilicon silicon ingot |
| CN109174778A (en) * | 2018-06-22 | 2019-01-11 | 东莞华清光学科技有限公司 | A kind of white glass cleaning process |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN115148850A (en) * | 2022-06-27 | 2022-10-04 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
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| CN101590476A (en) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | A kind of cleaning method of monocrystalline silicon piece |
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2010
- 2010-03-22 CN CN 201010129811 patent/CN101817006A/en active Pending
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| JP2841627B2 (en) * | 1990-02-02 | 1998-12-24 | 日本電気株式会社 | Semiconductor wafer cleaning method |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102001715A (en) * | 2010-10-23 | 2011-04-06 | 浙江硅宏电子科技有限公司 | Method for recycling single crystal silicon chip cleaning water |
| CN102062733A (en) * | 2010-12-09 | 2011-05-18 | 浙江昱辉阳光能源有限公司 | Method for detecting surface residues of solar silicon wafer after cleaning |
| CN102500569A (en) * | 2011-10-20 | 2012-06-20 | 高佳太阳能股份有限公司 | Degumming technology for aqueous solution of methanesulfonic acid |
| CN103419288A (en) * | 2012-05-21 | 2013-12-04 | 浙江晟辉科技有限公司 | Bar saving processing method after wire breaking of multi-wire cutting crystal bar |
| CN102744230A (en) * | 2012-07-26 | 2012-10-24 | 浙江矽盛电子有限公司 | Cleaning method for dirty and stuck solar silicon chip |
| CN102810602A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for storing silicon wafer to be cleaned |
| CN103721968A (en) * | 2012-10-15 | 2014-04-16 | 江苏天宇光伏科技有限公司 | Texturing and cleaning method for improving battery conversion efficiency |
| RU2557752C2 (en) * | 2013-03-22 | 2015-07-27 | Яков Яковлевич Вельц | Ultrasound processing of safety equipment |
| CN103464418A (en) * | 2013-09-18 | 2013-12-25 | 天津市环欧半导体材料技术有限公司 | Semiconductor silicon chip degumming process |
| CN103464418B (en) * | 2013-09-18 | 2015-10-07 | 天津市环欧半导体材料技术有限公司 | A kind of semi-conductor silicon chip degumming tech |
| CN103521473A (en) * | 2013-10-29 | 2014-01-22 | 宁夏银星能源股份有限公司 | Graphite boat cleaning process |
| CN106206253A (en) * | 2016-07-01 | 2016-12-07 | 大工（青岛）新能源材料技术研究院有限公司 | A kind of cleaning method of polysilicon silicon ingot |
| CN109174778A (en) * | 2018-06-22 | 2019-01-11 | 东莞华清光学科技有限公司 | A kind of white glass cleaning process |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN115148850A (en) * | 2022-06-27 | 2022-10-04 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
| CN115148850B (en) * | 2022-06-27 | 2023-06-02 | 晶科能源股份有限公司 | Silicon wafer, preparation method thereof and passivation treatment solution |
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Open date: 20100901 |