CN101847557A - Gate field emission cathode structure with edge enhancement effect and preparation method thereof - Google Patents
Gate field emission cathode structure with edge enhancement effect and preparation method thereof Download PDFInfo
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- CN101847557A CN101847557A CN201010200646A CN201010200646A CN101847557A CN 101847557 A CN101847557 A CN 101847557A CN 201010200646 A CN201010200646 A CN 201010200646A CN 201010200646 A CN201010200646 A CN 201010200646A CN 101847557 A CN101847557 A CN 101847557A
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- membrane electrode
- edge enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3046—Edge emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30423—Microengineered edge emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/02—Electrodes other than control electrodes
- H01J2329/04—Cathode electrodes
- H01J2329/0407—Field emission cathodes
- H01J2329/041—Field emission cathodes characterised by the emitter shape
- H01J2329/0423—Microengineered edge emitters
Abstract
The invention relates to a cathode structure in a gate field emission display with the edge enhancement effect, the cathode structure comprises a cathode substrate, a cathode unit comprises an electron emission cathode material layer, a gate layer and a dielectric layer, wherein the electron emission cathode material layer and the gate layer are arranged on the cathode glass substrate in a coplanar manner, correspond to each other and are separated by using the dielectric layer. The edge of the structure can increase the electrical properties of the electric field strength and control the width ratio of a strip-shaped electrode to the dielectric layer, thereby exposing the edge of the strip-shaped electrode on a cathode plate, exposing the strip-shaped electrode which is closest to the glass substrate through the way of etching glass, and realizing the arbitrary selection and the control of an emitter and a gate. Then, the edge structure is formed at an emission source, thereby improving an electric field positioned at the emission source, enhancing the control role of the gate, reducing the threshold electric field of the field emission cathode, improving the emission performance of the cathode field of the field emission display device, simplifying the process procedure and reducing the manufacturing cost.
Description
Technical field
The present invention relates to a kind of gate field emission cathode structure and preparation method thereof, particularly a kind of three utmost points or multiple-grid utmost point field emission cathode structure with edge enhancement with edge enhancement.
Background technology
Field-emitter display (FieldEmissionDisplay, FED) be a kind of novel flat-panel display device, have advantages such as light weight, power consumption are low, no subtense angle, its principle of luminosity is near cathode ray tube (CathodeRayTube, CRT), be a kind of display device of widely studying at present.
Grid type field-emitter display is a kind of flat-panel display device with three utmost points or multi-polar structure, assemble by positive plate and minus plate subtend, coming distance between holding anode plate and the minus plate by the supporter array between positive plate and the minus plate, it applies corresponding signal respectively by antianode, grid and negative electrode, make field-transmitting cathode emitting electrons bombardment phosphor anode luminous, wherein grid plays a part the emission of regulation and control cathode electronics.In grid type Field Emission Display, the emitting performance of field-transmitting cathode is the key factor that influences its image displaying quality, and cathode construction and field emission body layer are the key factors that influences the field-transmitting cathode emitting performance.
The sorting technique that field emission shows is a lot, by structure can be simply with non-grid be called the two-level structure field emission, what grid was arranged is called the three-stage structure field emission.Compare with the diarch structure, the required modulation voltage of three-stage structure is lower, need not in the enterprising horizontal high voltage modulation of anode.By the difference of gate location, can be divided into normal-gate field emission and back grid field emission in the three-stage structure field emission display board.Yet above-mentioned grid structure can only be realized its advantage separately.
In the field-emitter display of three utmost points or multi-polar structure, grid structure plays the necessary control effect for the electronics emission of negative electrode.The selection of the manufacture craft of grid structure and grid backing material all has very strict requirement.Wherein, the selection of control gate electrode structure form also is one of content of researcher's emphasis consideration, at present, has all selected the version of making emissive material on the control grid in most of flat-panel monitors, and the strong control action of grid structure clearly.But formed grid current is bigger, requires to make that than higher emissive material is subjected to certain damage and pollution in the manufacturing process of device easily that this is its disadvantage for device material.At present, the material that each makes that enterprise or research institution use is used for making the control grid has nothing in common with each other, and has used special manufacture craft simultaneously, and this just brings a series of problem, as: element manufacturing cost height; Complex manufacturing process; The manufacture craft conditional request is too harsh, can't carry out large-area manufacturing or the like.
Therefore, on above-mentioned grid structure basis, the present invention proposes a kind of novel field emission cathode structure, this structure can be simply on a cathode electrode unit as required, realize the regulation and control of multiple grid, as preceding grid, back grid, two before grid, two backs grid etc.This novel field emission cathode structure that we propose, by the strip shaped electric poles and the width ratio of dielectric layer are controlled, make that the strip shaped electric poles edge exposes on the minus plate, consider that simultaneously bottom strip shaped electric poles is to be produced on the glass substrate, realize marginal texture, need carry out the etching of glass to its edge, the proof of emulation simultaneously can obtain edge enhancement by this production method, has realized the regulation and control of multiple grid.
Summary of the invention
A purpose of the present invention provides a kind of gate field emission cathode structure with edge enhancement, make full use of the edge enhancement of membrane electrode, with enhanced field emission grid regulating and controlling effect, reduce field-transmitting cathode and open electric field, improve the field emission performance of front gate type field emission cathode.
The present invention realizes by the following technical solutions for achieving the above object: a kind of gate field emission cathode structure with edge enhancement, it is characterized in that, and comprising:
One cathode base is etched with the groove at interval that is parallel to each other on the described cathode base, to form emitting cathode;
Be located at the first strip membrane electrode on this cathode base surface, this first strip membrane electrode partly is on the groove;
Be located at the first strip dielectric on the described first strip membrane electrode surface, the width of the described first strip dielectric is narrower than the strip first strip membrane electrode;
Be located at the second strip membrane electrode on the described first strip dielectric surface, the width of the described second strip membrane electrode is wideer than the described first strip dielectric.
Another object of the present invention is a kind of preparation method with gate field emission cathode structure of edge enhancement who realizes that said structure provided, and it can simplify process, reduces manufacturing cost.
The specific implementation method is as follows: comprise a cathode base is provided, it is characterized in that:
(1) on described cathode base, utilize coating technique to form the first film electrode layer;
(2) adopt physical vaporous deposition on described the first film electrode layer, to make first insulating medium layer, second mea layers successively;
(3) successively described the first film electrode layer, first insulating medium layer and second mea layers are etched into the first strip membrane electrode, the first strip dielectric, the second strip membrane electrode, the width of the described first strip dielectric is narrower than first, second membrane electrode width, is used to form field emission source to expose the first strip membrane electrode edge;
(4) groove of the mutual parallel interval of etching on described cathode base to form emitting cathode, partly is on the groove the described first strip membrane electrode.
The present invention utilizes edge enhancement, strengthens the grid regulating and controlling effect, reduces field-transmitting cathode and opens electric field, improves the cathodic field emitting performance of device, and simplifies process, reduces manufacturing cost.
For the above-mentioned purpose that makes the present invention and other features, advantage are more clear, preferred embodiment cited below particularly, and conjunction with figs. is done following detailed description.
Description of drawings
Fig. 1 has the gate field emission cathode structure schematic diagram of edge enhancement for the present invention, and the direction of strip gate electrode and insulating medium layer is identical with the cathode electrode direction among the figure.
Fig. 2 has the gate field emission cathode structure side cross-sectional, view of edge enhancement for the present invention corresponding with Fig. 1.
Fig. 3 has the gate field emission cathode structure schematic diagram of edge enhancement for the present invention, and the direction of strip gate electrode and insulating medium layer is identical with the cathode electrode direction among the figure.
Fig. 4 has the gate field emission cathode structure side cross-sectional, view of edge enhancement for the present invention corresponding with Fig. 3.
Fig. 5 has the middle etch stages side cross-sectional, view of gate field emission cathode structure of edge enhancement for the present invention.
Embodiment
As depicted in figs. 1 and 2, the invention provides a kind of gate field emission cathode structure, it is characterized in that, comprising with edge enhancement:
One cathode base 21 is etched with the groove 25 at interval that is parallel to each other on the described cathode base, to form emitting cathode;
Be located at the first strip membrane electrode 22 on this cathode base surface, this first strip membrane electrode partly is on the groove 25;
Be located at the first strip dielectric 23 on the described first strip membrane electrode 22 surfaces, the width of the described first strip dielectric 23 is narrower than the strip first strip membrane electrode 22;
Be located at the second strip membrane electrode 24 on the described first strip insulating medium layer 23 surfaces, the width of the described second strip membrane electrode 24 is wideer than the described first strip insulating medium layer 23.
The cross section of described groove is ellipse or semicircular structure.
Here structure of the present invention can also be a multi-polar structure, as shown in Figure 3 and Figure 4, and the 3rd strip form film electrode 36 that the second strip dielectric 35 is set and is arranged at the second strip dielectric, 35 surfaces on the second strip membrane electrode surface of said structure.
Specifically, please continue to see figures.1.and.2, when making minus plate, at first provide cathode base 21, these cathode base 21 materials for example are glass.With 10 inches panel technologies is example, then with 10 inches the common float glass panel cathode base as minus plate.Then, on described cathode base 21, utilize coating technique to form the first film electrode layer; Its thickness is 50 ~ 2000nm.This mea layers material comprises Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of Ti single thin film or combination in any or alloy firm, the Sn that perhaps has conductivity, Zn, the oxide semiconductor thin-film of one or both and above combination thereof in the oxide of In, the first-selected Cr/Cu/Ag/Cu/Cr composite metal film of present embodiment is as mea layers, adopt direct current magnetron sputtering process on the glass cathode base surface that cleans up sputtering sedimentation Cr film successively, the Cu film, the Ag film, the Cu film, the Cr film forms the Cr/Cu/Ag/Cu/Cr composite metal film.
Then, adopt physical vaporous deposition on described the first film electrode layer, to make first insulating medium layer, second mea layers successively; The described first insulating medium layer THICKNESS CONTROL is at 0.5 ~ 10um.
Successively described second mea layers, first insulating medium layer and the first film electrode layer are etched into the second strip membrane electrode 24, the first strip dielectric 23, the first strip membrane electrode 22, the width of first, second strip form film electrode that the present invention is preferable can be 5-500um, the width of the described first strip dielectric is narrower than first, second strip form film electrode width, be generally 3-450um, be used to form field emission source to expose the first strip membrane electrode edge.
At last, the groove 25 of the mutual parallel interval of etching on described cathode base to form emitting cathode, partly is on the groove 25 the described first strip membrane electrode.
Three utmost point field-emissive cathode boards according to the present embodiment made, adopt the mode of etching glass, can form field emission source at the cathode electrode edge, and it is slightly wide than insulating medium layer width to make the membrane electrode width, and this all helps utilizing an edge enhancement of emission, strengthens the anticathode regulating and controlling effect of grid, reduce negative electrode and open field intensity, improve the field emission performance of field-transmitting cathode, and technology is simple, cost is low.
Please refer to Fig. 3 and Fig. 4, when making multipole minus plate, at first provide cathode base 31, these cathode base 31 materials for example are glass.With 10 inches panel technologies is example, then with 10 inches the common float glass panel cathode base as minus plate.Then, on described cathode base 31, utilize coating technique to form the first film electrode layer; Its thickness is 100-500nm.This mea layers material comprises Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of Ti single thin film or combination in any or alloy firm, the Sn that perhaps has conductivity, Zn, the oxide semiconductor thin-film of one or both and above combination thereof in the oxide of In, the first-selected Cr/Cu/Ag/Cu/Cr composite metal film of present embodiment is as mea layers, adopt direct current magnetron sputtering process on the glass cathode base surface that cleans up sputtering sedimentation Cr film successively, the Cu film, the Ag film, the Cu film, the Cr film forms the Cr/Cu/Ag/Cu/Cr composite metal film.
Then, adopt physical vaporous deposition on described the first film electrode layer, to make first insulating medium layer, second mea layers, second insulating medium layer and the 3rd mea layers successively; Described first, second insulating medium layer THICKNESS CONTROL is at 2-10um.
As shown in Figure 5, Fig. 5 is an etch stages side cross-sectional, view in the middle of the present invention, the present invention adopts from top to bottom etching successively, specifically, successively with described the 3rd mea layers, second insulating medium layer, second mea layers, first insulating medium layer 331 and the first film electrode layer 321 are etched into the 3rd strip form film electrode 36, the second strip dielectric 35, the second strip membrane electrode 34, the first strip dielectric 33, the first strip membrane electrode 32, the present invention preferable first, second, the width of the 3rd strip form film electrode can be 5-500um, the width of the described first strip dielectric is than first, the second strip membrane electrode width is narrow, be generally 3-450um, be used to form field emission source to expose the first strip membrane electrode edge; The width of the described second strip dielectric is narrower than second, third strip form film electrode width, is generally 3-450um, is used to form field emission source to expose the second strip membrane electrode edge.
At last, the groove 37 of the mutual parallel interval of etching on described cathode base to form emitting cathode, partly is on the groove 37 the described first strip membrane electrode.
In addition, in the manufacturing process of film metal conductive layer marginal texture, can utilize different metal material under same etching atmosphere and same metal etch rate characteristic inequality under different etching atmosphere to the cathode construction of plural layers, carry out the making of this marginal texture.
Multipole field-emissive cathode board according to the present embodiment made, adopt the mode of etching glass, can be at fabricating yard, cathode electrode edge emission source, and it is slightly wide than insulating medium layer width to make the membrane electrode width, and this all helps utilizing an edge enhancement of emission, strengthens the anticathode regulating and controlling effect of grid, reduce negative electrode and open field intensity, improve the field emission performance of field-transmitting cathode, and technology is simple, cost is low.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. the gate field emission cathode structure with edge enhancement is characterized in that, comprising:
One cathode base is etched with the groove at interval that is parallel to each other on the described cathode base, to form emitting cathode;
Be located at the first strip membrane electrode on this cathode base surface, this first strip membrane electrode partly is on the groove;
Be located at the first strip dielectric on the described first strip membrane electrode surface, the width of the described first strip dielectric is narrower than the strip first strip membrane electrode;
Be located at the second strip membrane electrode on the described first strip dielectric surface, the width of the described second strip membrane electrode is wideer than the described first strip dielectric.
2. the gate field emission cathode structure with edge enhancement according to claim 1, it is characterized in that, further comprise the second strip dielectric of being located at the described second strip membrane electrode surface and be located at the 3rd strip form film electrode on the second strip dielectric surface.
3. the gate field emission cathode structure with edge enhancement according to claim 1 is characterized in that: the cross section of described groove is ellipse or semicircular structure.
4. the gate field emission cathode structure with edge enhancement according to claim 1 is characterized in that: the thickness of described strip form film electrode is 50 ~ 2000nm, and the width of described strip form film electrode is 5 ~ 500um.
5. the gate field emission cathode structure with edge enhancement according to claim 1 is characterized in that: the thickness of described strip insulating medium layer is 0.5 ~ 10um, and the width of described strip insulating medium layer is 3 ~ 450um.
6. the preparation method with gate field emission cathode structure of edge enhancement comprises a cathode base is provided, and it is characterized in that:
(1) on described cathode base, utilize coating technique to form the first film electrode layer;
(2) adopt physical vaporous deposition on described the first film electrode layer, to make first insulating medium layer, second mea layers successively;
(3) successively described second mea layers, first insulating medium layer and the first film electrode layer are etched into the second strip membrane electrode, the first strip dielectric, the first strip membrane electrode, the width of the described first strip dielectric is narrower than first, second membrane electrode width, is used to form field emission source to expose the first strip membrane electrode edge;
The groove of the mutual parallel interval of etching on described cathode base to form emitting cathode, partly is on the groove the described first strip membrane electrode.
7. the preparation method with gate field emission cathode structure of edge enhancement according to claim 6, it is characterized in that, also further comprise in described step (2): adopt physical vaporous deposition to make second insulating medium layer and the 3rd mea layers successively on described second mea layers, described step (3) also comprises: etching the first strip membrane electrode, the first strip dielectric, earlier the 3rd above-mentioned mea layers and second insulating medium layer are etched into the 3rd strip form film electrode and the second strip dielectric successively before the second strip membrane electrode; The described second strip dielectric width is narrower than the second strip membrane electrode.
8. the preparation method with gate field emission cathode structure of edge enhancement according to claim 6 is characterized in that: the groove cross section of described step (4) etching is shaped as ellipse or semicircle.
9. the preparation method with gate field emission cathode structure of edge enhancement according to claim 6 is characterized in that: the thickness of described strip form film electrode is 50 ~ 2000nm, and the width of described strip form film electrode is 5 ~ 500um.
10. the preparation method with gate field emission cathode structure of edge enhancement according to claim 6 is characterized in that: the thickness of described strip insulating medium layer is 0.5 ~ 10um, and the width of described strip insulating medium layer is 3 ~ 450um.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010200646A CN101847557B (en) | 2010-06-13 | 2010-06-13 | Gate field emission cathode structure with edge enhancement effect and preparation method thereof |
| PCT/CN2011/074502 WO2011157097A1 (en) | 2010-06-13 | 2011-05-23 | Cathode structure of gate field emission display with edge enhancement effect and preparation method thereof |
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| CN201010200646A CN101847557B (en) | 2010-06-13 | 2010-06-13 | Gate field emission cathode structure with edge enhancement effect and preparation method thereof |
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| CN101847557A true CN101847557A (en) | 2010-09-29 |
| CN101847557B CN101847557B (en) | 2012-10-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011157097A1 (en) * | 2010-06-13 | 2011-12-22 | 福州大学 | Cathode structure of gate field emission display with edge enhancement effect and preparation method thereof |
| CN104465294A (en) * | 2014-11-13 | 2015-03-25 | 西安交通大学 | Dynamic multi-stage serial connection coaxial butterfly-type channel dynode electron multiplier |
| CN106128906A (en) * | 2016-08-29 | 2016-11-16 | 重庆启越涌阳微电子科技发展有限公司 | Vertical type graphene film field-transmitting cathode and preparation method thereof, electrode |
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| US5955850A (en) * | 1996-08-29 | 1999-09-21 | Futaba Denshi Kogyo K.K. | Field emission display device |
| US5955833A (en) * | 1997-05-06 | 1999-09-21 | St. Clair Intellectual Property Consultants, Inc. | Field emission display devices |
| JP2000243240A (en) * | 1999-02-19 | 2000-09-08 | Nec Corp | Manufacture of field emission type cathode equipped with focusing electrode |
| US6323594B1 (en) * | 1997-05-06 | 2001-11-27 | St. Clair Intellectual Property Consultants, Inc. | Electron amplification channel structure for use in field emission display devices |
| CN1433039A (en) * | 2002-01-07 | 2003-07-30 | 深圳大学光电子学研究所 | Panchromatic great-arear flat display based on carbon nanotube field emitting array |
| CN1707727A (en) * | 2004-05-22 | 2005-12-14 | 三星Sdi株式会社 | Field emission device and field emission display using the same |
| US20060017363A1 (en) * | 2004-07-22 | 2006-01-26 | Tsinghua University | Field emission device and method for making the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847557B (en) * | 2010-06-13 | 2012-10-17 | 福州大学 | Gate field emission cathode structure with edge enhancement effect and preparation method thereof |
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2010
- 2010-06-13 CN CN201010200646A patent/CN101847557B/en active Active
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- 2011-05-23 WO PCT/CN2011/074502 patent/WO2011157097A1/en active Application Filing
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| US5955850A (en) * | 1996-08-29 | 1999-09-21 | Futaba Denshi Kogyo K.K. | Field emission display device |
| US5955833A (en) * | 1997-05-06 | 1999-09-21 | St. Clair Intellectual Property Consultants, Inc. | Field emission display devices |
| US6323594B1 (en) * | 1997-05-06 | 2001-11-27 | St. Clair Intellectual Property Consultants, Inc. | Electron amplification channel structure for use in field emission display devices |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011157097A1 (en) * | 2010-06-13 | 2011-12-22 | 福州大学 | Cathode structure of gate field emission display with edge enhancement effect and preparation method thereof |
| CN104465294A (en) * | 2014-11-13 | 2015-03-25 | 西安交通大学 | Dynamic multi-stage serial connection coaxial butterfly-type channel dynode electron multiplier |
| CN106128906A (en) * | 2016-08-29 | 2016-11-16 | 重庆启越涌阳微电子科技发展有限公司 | Vertical type graphene film field-transmitting cathode and preparation method thereof, electrode |
| CN106128906B (en) * | 2016-08-29 | 2017-12-19 | 重庆启越涌阳微电子科技发展有限公司 | Vertical type graphene film field-transmitting cathode and preparation method thereof, electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011157097A1 (en) | 2011-12-22 |
| CN101847557B (en) | 2012-10-17 |
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