CN101866875A - Method for preparing silicon germanium on insulator (SGOI) by layer transfer and ion implantation technology - Google Patents
Method for preparing silicon germanium on insulator (SGOI) by layer transfer and ion implantation technology Download PDFInfo
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- CN101866875A CN101866875A CN201010189313A CN201010189313A CN101866875A CN 101866875 A CN101866875 A CN 101866875A CN 201010189313 A CN201010189313 A CN 201010189313A CN 201010189313 A CN201010189313 A CN 201010189313A CN 101866875 A CN101866875 A CN 101866875A
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Abstract
The invention relates to a method for preparing silicon germanium on insulator (SGOI), comprising the following steps: extending multiple layers of materials which are in the structure of Si1-xGex/Siepi/Si1-yGey on silicon, wherein the x is more than 0 and less than 1, the y is more than 0 and less than 1, and the Si1-xGex is the upper surface of the extended material; controlling the thickness of the extended thin film which is in the structure of Si1-xGex and the extended thin film which is in the structure of Si1-yGey to be less than the critical thickness so as to ensure that the extended thin films are fully strained; transferring the multiple layers of materials which are in the structure of Si1-xGex/Si/Si1-yGey to support material which is in the structure of SiO2/Si by the layer transfer method to form multiple layers of materials which are in the structure of Si1-yGey/Si/Si1-xGex/SiO2/Si; removing the layer of material which is in the structure of Si1-yGey by the selective corrosion method; and implanting ions and annealing to enable the layer of material which is in the structure of Si1-xGex to be relaxed and the top layer of material which is in the structure of Si to be stressed to obtain the SGOI which is in the structure of Si/Si1-xGex/SiO2/Si.
Description
Technical field
The present invention relates to a kind of method for preparing germanium on insulator silicon (SGOI), a kind of more precisely method of utilizing layer transfer and ion implantation technique to prepare the SGOI material belongs to microelectronics and solid electronics technical field.
Background technology
Preparation smaller szie, more high performance device are the target and the direction of semi-conductor industry development always, along with development of semiconductor, rely on silicon materials can't prepare enough high speeds merely, the transistor of low-power consumption.From 90nm technology, strained silicon (sSi) technology and silicon-on-insulator (SOI) technology become the two big sharp weapon that promote Moore's Law.The strained-silicon-on-insulator technology that combines strained silicon and SOI technology now has been subjected to everybody pay attention to day by day, and it is considered to one of preferred substrate material of CMOS technology of future generation.
The strained-silicon-on-insulator material generally is divided into two kinds, and a kind of is that strained silicon materials directly is attached on the insulating barrier of silicon substrate, forms sSi/SiO
2The sandwich structure of/Si (sSOI); Another kind is to also have one deck SiGe layer between strained silicon and the insulating barrier, forms sSi/SiGe/SiO
2The four-layer structure of/Si (SGOI).Having of tensile stress is beneficial to the raising electron mobility among the sSOI, but the castering action to hole mobility is also not obvious, and SGOI is as a kind of double channel material, because the tensile stress in the strained silicon layer and the acting in conjunction of the compression in the SiGe layer, electronics and hole mobility in the material are improved simultaneously.
For preparation SGOI material, existing class known method report, comparatively typical method can be published in the article of the 48th volume the 8th phase 1297-1305 page or leaf of Solid-State Electronics with reference to people such as Taraschi in 2004, exercise question is " Strained Si; SiGe, and Ge on-insulator:reviewof wafer bonding fabrication techniques ".In this piece article, introduced and used layer to shift the method for preparing the SGOI material.In described method, extension relaxation SiGe material at first, then with the SiGe material transfer of relaxation to SiO
2On the support substrates of/Si structure.For extension relaxation S iGe material, need earlier the graded buffer layer of several microns of on body silicon extensions, material epitaxy often needs the times several even tens hours.
For this reason, the present invention plans to introduce a kind of new method of the SGOI of preparation material.At first prepare the strain SiGe material, transfer to SiO at strain gauge material
2After on the support substrates of/Si structure, make its relaxation, not only make the shortening of material epitaxy time but also prepared material property is improved by ion injection and annealing process.
Summary of the invention
The object of the present invention is to provide a kind of method of the SGOI of preparation material.Comprise the steps: at first (Si on the body silicon substrate
Sub) the method epitaxy Si successively of using chemical vapour deposition (CVD)
1-yGe
y, Si
Epi, Si
1-xGe
xThree kinds of different films, wherein 0＜x＜1,0＜y＜1.According to x in the epitaxial material, the difference of y value, the Si of selective epitaxy
1-yGe
y, Si
1-xGe
xThe thickness of film, make it all less than critical thickness, (study now and experiment has been found that, on the Si substrate in the epitaxy Si Ge film, there is a critical thickness, when the SiGe of extension film thickness less than this critical thickness the time, the SiGe material is complete strain, and this critical thickness reduces with the increase of the component of Ge in the SiGe material.The pass of critical thickness and Ge component x is h
c≈ 0.0234/ (1+0.04x)
2* ln (h
c/ 4)), for Si
1-yGe
y, Si
1-xGe
xBetween the Si of extension
EpiIt then can be any thickness.After extension is finished, obtain Si
1-xGe
x/ Si
Epi/ Si
1-yGe
y/ Si
SubThe multilayer material of structure, Si
1-xGe
xBe the upper surface of epitaxial material, Si
EpiBe the Si of extension, Si
SubBe the substrate silicon material.This material has been prepared SiO with another sheet surface
2Si backing material bonding, obtain Si
Sub/ Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The multilayer material of/Si structure.By abrasive method, remove Si
Sub, obtain Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The material of/Si structure.Si wherein
1-yGe
yThe Si that may also have part above
Sub, select first kind of suitable chemical solution, adopt the method for selective corrosion, remove Si
1-yGe
yThe Si that exists above
Sub, corrosion stops at Si
1-yGe
yOn the surface.Select second kind of suitable chemical solution then, adopt the method for selective corrosion, erode remaining Si
1-yGe
y, corrosion stops at Si
EpiOn the material, promptly obtain Si
Epi/ Si
1-xGe
x/ SiO
2/ Si material.Use is than low dosage (1 * 10
15Cm
-2～3 * 10
16Cm
-2) H
+, He
+Perhaps other ions are injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2Close Si in the material
1-xGe
xThe place, under 700～1100 ℃ of temperature, anneal, on the one hand increase bond strength, make Si on the other hand
1-xGe
xMaterial generation relaxation has finally formed the SGOI material.Or by grinding or lithographic method removes Si earlier
EpiLayer, and then inject and annealing, then need at Si
1-xGe
xThe Si thin layer that extension one deck is new on the material (seeing embodiment 1 for details).Need the resilient coating of several microns of extensions even tens microns with respect to conventional method, using the present invention to prepare SGOI only needs film about extension 0.1-0.5 micron, can save the extension time greatly, reduces cost.
In a preferred embodiment, extension is prepared Si
1-xGe
x/ Si
Epi/ Si
1-yGe
y/ Si
SubBehind the multilayer material of structure, with the H of doses
+Perhaps He
+Ion is injected into Si
1-yGe
yIn the material, prepared SiO with another sheet surface then
2Si backing material bonding, form Si
Sub/ Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The multilayer material of/Si structure.This material is annealed under 400～600 ℃ of temperature, make material at H
+Perhaps He
+Genetic horizon separated near ion injected range, obtained Si
1-yGe
y/ Si/Si
1-xGe
x/ SiO
2The material of/Si structure.Select suitable chemical solution, adopt the method for selective corrosion, erode remaining Si
1-yGe
y, corrosion stops at Si
EpiOn the material, promptly obtain Si
Epi/ Si
1-xGe
x/ SiO
2/ Si material.Use is than low dosage (10
15Cm
-210
16Cm
-2) H
+, He
+Perhaps other ions are injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2Close Si in the material
1-xGe
xThe place, under 700～1100 ℃ of temperature, anneal, on the one hand increase bond strength, make Si on the other hand
1-xGe
xMaterial generation relaxation has finally formed the SGOI material, or removes Si earlier by grinding or lithographic method
EpiLayer, and then inject and annealing, then need at Si
1-xGe
xThe Si thin layer that extension one deck is new on the material (seeing embodiment 2 for details).
Description of drawings
Fig. 1 is an epitaxy Si on the body silicon substrate that the present invention relates to
1-yGe
y, Si
Epi, Si
1-xGe
xSchematic cross-section, 1 is the body silicon substrate, 2 is Si
1-yGe
yLayer, 3 is Si
EpiLayer, 4 is Si
1-xGe
xLayer.
To be the epitaxial material that the present invention relates to carry out schematic cross-section behind the bonding with the support substrates material to Fig. 2.5 is SiO
2Layer, 6 for supporting layer-of-substrate silicon.
Fig. 3 is the material section schematic diagram after the grinding of the present invention relates to.
Fig. 4 material section schematic diagram after the selective corrosion that has been the carrying out that the present invention relates to.
Fig. 5 is the material section schematic diagram of the SGOI that the present invention relates to.7 for upper surface has produced the silicon layer of strain, and 8 is H
+, He
+Ion implanted region.
Fig. 6 is the H that the present invention relates to
+Perhaps He
+With 5 * 10
16Cm
-2～1 * 10
17Cm
-2Dosage be injected into material section schematic diagram behind the epitaxial film.9 for injecting H
+Perhaps He
+Accumulation regions.
Embodiment
The following example will help to understand the present invention, but not limit content of the present invention.
1, the method for on the body silicon substrate, using chemical vapour deposition (CVD) epitaxy Si successively
1-yGe
y, Si
Epi, Si
1-xGe
xThree kinds of different films, wherein 0＜x＜1,0＜y＜1.According to x in the epitaxial material, the difference of y value, the Si of selective epitaxy
1-yGe
y, Si
1-xGe
xThe thickness of film makes it all less than critical thickness, for Si
1-yGe
y, Si
1-xGe
xBetween the Si of extension
EpiThen can be any thickness, the preferable range of x be 0＜x≤0.30, and the preferable range of y is 0＜y≤0.20, and as an optimal value, x is 0.25, and y is 0.15 (seeing accompanying drawing 1).
2, get the silicon substrate material of another sheet, by thermal oxidation, perhaps plasma enhanced chemical vapor deposition (PECVD), perhaps additive method is prepared SiO in surface of silicon
2, SiO
2Thickness is generally at 200nm～1um.
3, the material that step 1 is prepared is with the material bonding (seeing accompanying drawing 2) of step 2 preparation.
4, pass through abrasive method, the material that step 3 is obtained removes body silicon Si, using described first kind of chemical solution is the chemical solution that comprises TMAH (Tetramethyl ammonium hydroxide tetramethyl aqua ammonia) or KOH solution, surperficial remaining Si is fallen in selective corrosion, and etching stopping is at Si
1-yGe
yLayer (seeing accompanying drawing 3).
5, use described second kind of chemical solution to be HNO for comprising volume proportion
3: H
2O: HF (0.5%)=40: 20: 5 is at interior chemical solution (HF (0.5%) expression water: HF=200 wherein: 1) etch away the remaining Si of step 4
1-yGe
yLayer, corrasion stops at Si
Epi(see accompanying drawing 4) on the epitaxial loayer.
6, use H
+, He
+Perhaps other ions are with 1 * 10
15Cm
-2～3 * 10
16Cm
-2Dosage be injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2In near Si
1-xGe
xThe place, under 700～1100 ℃ of temperature, anneal, on the one hand increase bond strength, make Si on the other hand
1-xGe
xMaterial generation relaxation, corresponding Si
1-xGe
xSi above the material
EpiThe preparation of SGOI material is finished in the material production strain.Wherein, preferably injecting ion is H
+Perhaps He
+, preferred implantation dosage is 1 * 10
16m
-2(seeing accompanying drawing 5).
If 7 grindings of using after step 5 or lithographic method have removed Si
EpiLayer, the method by chemical vapour deposition (CVD) then is at the Si of step 6 relaxation
1-xGe
xThe Si thin layer that top extension one deck is new is because this layer is at Si
1-xGe
xLast extension, the Si layer will keep tensile strain.
1, the method for on the body silicon substrate, using chemical vapour deposition (CVD) epitaxy Si successively
1-yGe
y, Si
Epi, Si
1-xGe
xThree kinds of different films, wherein 0＜x＜1,0＜y＜1.According to x in the epitaxial material, the difference of y value, the Si of selective epitaxy
1-yGe
y, Si
1-xGe
xThe thickness of film makes it all less than critical thickness, for Si
1-yGe
y, Si
1-xGe
xBetween the Si of extension
EpiThen can be any thickness (seeing accompanying drawing 1), the preferable range of x be 0＜x≤0.30, and the preferable range of y is 0＜y≤0.20, and as an optimal value, x is 0.25, and y is 0.15.
2, with H
+Perhaps He
+With 5 * 10
16Cm
-2～1 * 10
17Cm
-2Dosage, select suitable energy, be injected into the Si of epitaxial material from the upper surface of the material of step 1 preparation
1-yGe
yIn the layer (seeing accompanying drawing 6), as a preferred value, H
+Or He
+Implantation dosage is 6 * 10
16Cm
-2
3, get the new silicon substrate material of a slice, by comprising thermal oxidation.Perhaps plasma enhanced chemical vapor deposition (PECVD) is prepared SiO in interior method in surface of silicon
2, SiO
2Thickness is generally at 200nm～1um.
4, the material that step 2 is prepared is with the material bonding of step 3 preparation.
5, the material that step 4 is obtained is annealed under 400～600 ℃ of temperature, makes material at H
+Perhaps He
+Genetic horizon separated near ion injected range.
6, use volume proportion to be HNO
3: H
2Chemical solution or other the high SiGe of O: HF (0.5%)=40: 20: 5: the chemical solution of Si etching ratio etches away the remaining Si of step 5 as selective corrosion solution
1-yGe
yLayer, corrasion stops at Si
EpiOn the epitaxial loayer.
7, use H
+, He
+Perhaps other ions are with 1 * 10
15Cm
-2～3 * 10
16Cm
-2Dosage be injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2In near Si
1-xGe
xThe place, under 700～1100 ℃ of temperature, anneal, on the one hand increase bond strength, make Si on the other hand
1-xGe
xMaterial generation relaxation, corresponding Si
1-xGe
xSi above the material
EpiThe preparation of SGOI material is finished in the material production strain.In this technology, preferably injecting ion is H
+Perhaps He
+, preferred implantation dosage is 1 * 10
16Cm
-2
If 8 have removed Si with grinding or lithographic method after step 6
EpiLayer, the method by chemical vapour deposition (CVD) then is at the Si of step 7 relaxation
1-xGe
xThe Si thin layer that top extension one deck is new is because this layer is at Si
1-xGe
xLast extension, the Si layer will keep tensile strain.
Claims (7)
1. one kind is utilized layer to shift and ion implantation technique prepares the method for SGOI material, it is characterized in that adopting in two kinds of methods of following A or B any:
Method A
1. the method for using chemical vapour deposition (CVD) on the substrate silicon material is epitaxy Si successively
1-yGe
y, Si
Epi, Si
1-xGe
xThree kinds of different films, 0＜x＜1,0＜y＜1 wherein, according to x in the epitaxial material, the difference of y value, the Si of selective epitaxy
1-yGe
y, Si
1-xGe
xThe thickness of film makes it all less than critical thickness; And Si
1-yGe
y, Si
1-xGe
xBetween the Si of extension
EpiThe thickness of layer is any thickness; After extension is finished, obtain Si
1-xGe
x/ Si
Epi/ Si
1-yGe
y/ Si
SubThe multilayer material of structure, Si
1-xGe
xBe the upper surface of epitaxial material, Si
EpiBe the Si of extension, Si
SubBe the substrate silicon material;
2. the multilayer material of step 1 preparation has been prepared SiO with another sheet surface
2The silicon substrate material bonding, obtain Si
Sub/ Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The multilayer material of/Si structure;
3. by abrasive method, remove Si
Sub, obtain Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The material of/Si structure, the method for employing selective corrosion is removed Si
1-yGe
yThe Si that exists above
Sub, make corrosion stop at Si
1-yGe
yOn the surface;
4. select chemical solution then, adopt the method for selective corrosion, erode Si
1-yGe
y, make corrosion stop at Si
EpiOn the material, promptly obtain Si
Epi/ Si
1-xGe
x/ SiO
2/ Si material;
5. use 1 * 10
15Cm
-2～3 * 10
16Cm
-2The H of low dosage
+Or He
+Ion is injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2Close Si in the material
1-xGe
xThe place, under 700～1100 ℃ of temperature, anneal, when increasing bond strength, make Si
1-xGe
xMaterial generation relaxation, corresponding Si
1-xGe
xSi above the material
EpiMaterial generation strain has finally formed the SGOI material;
Method B
1. at body silicon substrate Si
SubThe method of last use chemical vapour deposition (CVD) is epitaxy Si successively
1-yGe
y, Si
Epi, Si
1-xGe
xThree kinds of different films, 0＜x＜1,0＜y＜1 wherein, according to x in the epitaxial material, the difference of y value, the Si of selective epitaxy
1-yGe
y, Si
1-xGe
xThe thickness of film makes it all less than critical thickness; And Si
1-yGe
y, Si
1-xGe
xBetween the Si of extension
EpiThe thickness of layer is any thickness; After extension is finished, obtain Si
1-xGe
x/ Si
Epi/ Si
1-yGe
y/ Si
SubThe multilayer material of structure, Si
1-xGe
xBe the upper surface of epitaxial material, Si
EpiBe the Si of extension, Si
SubBe the substrate silicon material;
2. prepare Si in extension
1-xGe
x/ Si
Epi/ Si
1-yGe
y/ Si
SubBehind the multilayer material of structure, with 5 * 10
16Cm
-2～1 * 10
17Cm
-2The H of low dosage
+Perhaps He
+Ion is injected into Si
1-yGe
yIn the material;
3. prepared SiO with another sheet surface then
2The silicon substrate material bonding, form Si
Sub/ Si
1-yGe
y/ Si
Epi/ Si
1-xGe
x/ SiO
2The multilayer material of/Si structure;
4. the multilayer material of step 2 preparation is annealed under 400～600 ℃ of temperature, make material at H
+Perhaps He
+Genetic horizon separated near ion injected range, obtained Si
1-yGe
y/ Si/Si
1-xGe
x/ SiO
2The material of/Si structure;
5. select chemical solution, adopt the method for selective corrosion, erode remaining Si
1-yGe
y, make corrosion stop at Si
EpiOn the material, promptly obtain Si
Epi/ Si
1-xGe
x/ SiO
2/ Si material;
6. re-use 1 * 10
15Cm
-2～3 * 10
16Cm
-2The H of dosage
+Or He
+Ion is injected into Si
1-xGe
x/ SiO
2On the interface of material, perhaps be injected into SiO
2Close Si in the material
1-xGe
xThe place anneals under 700～1100 ℃ of temperature, makes Si when increasing bond strength
1-xGe
xMaterial generation relaxation, corresponding Si
1-xGe
xSi above the material
EpiMaterial generation strain has finally formed the SGOI material.
2. by the described preparation method of claim 1, it is characterized in that 0＜x0.30 among method A or the method B, 0＜y≤0.25.
3. by the described preparation method of claim 2, it is characterized in that x=0.25 among method A or the method B, y=0.15.
4. by the described preparation method of claim 1, it is characterized in that the SiO on another sheet silicon substrate material surface among method A or the B
2By thermal oxidation or plasma enhanced chemical vapor deposition method preparation, thickness is 200nm-1 μ m.
5. by the described preparation method of claim 1, it is characterized in that:
1. after the step 4 of method A, remove Si with grinding or lithographic method
EpiLayer, the method by chemical vapour deposition (CVD) then is at the Si of step 5 relaxation
1-xGe
xThe Si thin layer that top extension one deck is new, the Si thin layer will keep tensile strain;
2. after the step 5 of method B, remove Si with grinding or lithographic method
EpiLayer, the method by chemical vapour deposition (CVD) then is at the Si of step 6 relaxation
1-xGe
xThe Si thin layer that top extension one deck is new, the Si thin layer will keep tensile strain.
6. by the described preparation method of claim 1, it is characterized in that:
1. adopt the chemical solution selective corrosion substrate silicon material that comprises TMAH or KOH solution in the method A step 3;
2. the described selection chemical solution of method A step 4 and method B step 5 comprises that volume ratio is HNO
3: H
2O: 0.5%HF=40: 20: 5 at interior chemical solution as selective corrosion liquid, wherein 0.5%HF represents water: HF=200: 1.
7. by the described preparation method of claim 1, it is characterized in that:
1. H in the method A step 5
+Or He
+Implantation dosage is 1 * 10
16Cm
-2
2. H in the method B step 2
+Or He
+Implantation dosage is 6 * 10
16Cm
-2
3. H in the method B step 6
+Or He
+Implantation dosage is 1 * 10
16Cm
-2
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347267A (en) * | 2011-10-24 | 2012-02-08 | 中国科学院上海微系统与信息技术研究所 | High-quality SGOI (SiGe-on insulator) produced by utilizing material with superlattice structure and production method of high-quality SGOI |
| CN103065931A (en) * | 2011-10-24 | 2013-04-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing semiconductor relaxation, tensile strain materials and for transferring layers thereof |
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| US20020072130A1 (en) * | 2000-08-16 | 2002-06-13 | Zhi-Yuan Cheng | Process for producing semiconductor article using graded expital growth |
| JP2006269552A (en) * | 2005-03-22 | 2006-10-05 | Shin Etsu Handotai Co Ltd | Method of manufacturing semiconductor wafer |
| CN101010781A (en) * | 2004-09-13 | 2007-08-01 | 国际商业机器公司 | Method of creating defect free high Ge content (25%) SIGE-on-insulator (SGOI) substrates using wafer bonding techniques |
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2010
- 2010-06-01 CN CN2010101893138A patent/CN101866875B/en not_active Expired - Fee Related
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| US20020072130A1 (en) * | 2000-08-16 | 2002-06-13 | Zhi-Yuan Cheng | Process for producing semiconductor article using graded expital growth |
| CN101010781A (en) * | 2004-09-13 | 2007-08-01 | 国际商业机器公司 | Method of creating defect free high Ge content (25%) SIGE-on-insulator (SGOI) substrates using wafer bonding techniques |
| JP2006269552A (en) * | 2005-03-22 | 2006-10-05 | Shin Etsu Handotai Co Ltd | Method of manufacturing semiconductor wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347267A (en) * | 2011-10-24 | 2012-02-08 | 中国科学院上海微系统与信息技术研究所 | High-quality SGOI (SiGe-on insulator) produced by utilizing material with superlattice structure and production method of high-quality SGOI |
| CN103065931A (en) * | 2011-10-24 | 2013-04-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing semiconductor relaxation, tensile strain materials and for transferring layers thereof |
| CN103065931B (en) * | 2011-10-24 | 2015-09-23 | 中国科学院上海微系统与信息技术研究所 | A kind of prepare semiconductor relaxation, strain gauge material and make its layer transfer method |
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| Publication number | Publication date |
|---|---|
| CN101866875B (en) | 2011-12-07 |
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