CN101901847A - Thin-film solar cell - Google Patents
Thin-film solar cell Download PDFInfo
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- CN101901847A CN101901847A CN 201010236618 CN201010236618A CN101901847A CN 101901847 A CN101901847 A CN 101901847A CN 201010236618 CN201010236618 CN 201010236618 CN 201010236618 A CN201010236618 A CN 201010236618A CN 101901847 A CN101901847 A CN 101901847A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a thin-film solar cell structurally comprising a substrate layer, a back electrode layer, a P-type CIGS (copper, indium, gallium and selenium) thin-film layer, an N-type CIGS cushion layer, a P+ layer, a P-type a-Si (amorphous silicon) layer, an I-type a-Si layer, an N-type a-Si layer, an N+ layer and an TCO (transparent conducting oxide) layer. The thin-film solar cell of the invention is an a-Si P-I-N junction layer has reasonable thickness design and the NIR (near infrared spectrum) energy can be completely absorbed by a CIGS P-N junction layer, thus greatly increasing the power of the thin-film solar cell; moreover, the P+ layer and the N+ layer which are ultrathin but heavily doped are respectively arranged outside the P-type a-Si layer and the N-type a-Si layer of the a-Si P-I-N junction layer, thus increasing the electric-field intensity of the I-type a-Si layer and increasing the power of the thin-film solar cell. Compared with the existing double-junction-layer structured solar cells of the same type, the thin-film solar cell of the invention can increase the power thereof by about 1.5% on average. The thin-film solar cell of the invention further has the advantages of high reliability and low manufacturing cost.
Description
Technical field
The invention belongs to photovoltaic solar battery technology field, be specifically related to a kind of thin-film solar cells.
Background technology
CIGS is the abbreviation of copper indium gallium selenium solar cell, the series-connected cell of forming by CIGS and a-Si hull cell because have that efficient height, attenuation rate are low, advantages such as production process easy operating and improvement, from beginning to occur just having caused people's very big concern.Disclose the multijunction solar cell that a kind of CIGS and a-Si hull cell are composed in series in publication number is 6368892 United States Patent (USP), its structure is: substrate layer/dorsum electrode layer/CIS(or CIGS) layer/n type conductive layer/P-I-N ties layer/preceding electrode layer.But the module design of the many knots of existing a-Si/CIGS series connection layer solar cell is reasonable not enough, and its present photoelectric conversion efficiency has only about 10%.
Summary of the invention
The thin-film solar cells that the purpose of this invention is to provide a kind of excellent performance.
In order to realize above purpose, the technical solution adopted in the present invention is: a kind of thin-film solar cells, comprise substrate layer, be arranged on the dorsum electrode layer on the substrate layer, tco layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, described solar cell module comprises a Copper Indium Gallium Selenide P-N knot layer and an amorphous silicon P-I-N knot layer, the P type CIGS thin-film layer of described Copper Indium Gallium Selenide P-N knot layer is arranged on the dorsum electrode layer, is provided with heavily doped P between the P type amorphous silicon layer of the N type Copper Indium Gallium Selenide resilient coating of described Copper Indium Gallium Selenide P-N knot layer and described amorphous silicon P-I-N knot layer
+Layer is provided with heavily doped N between the N type amorphous silicon layer of described amorphous silicon P-I-N knot layer and the described tco layer
+Layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/P
+Layer/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/N
+Layer/tco layer.
Further, the thickness of amorphous silicon P-I-N knot layer is 100nm～360nm.
The thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
Heavily doped P
+The thickness of layer is 1nm～10nm.
Heavily doped P
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
Heavily doped N
+The thickness of layer is 1.5nm～15nm.
Heavily doped N
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
The thickness of P type CIGS thin-film layer is 1.0um～2.5um in the Copper Indium Gallium Selenide P-N knot layer.
The thickness of N type Copper Indium Gallium Selenide resilient coating is 40nm～200nm in the Copper Indium Gallium Selenide P-N knot layer.
The material of N type Copper Indium Gallium Selenide resilient coating is ZnS, ZnSe or ZnIn in the Copper Indium Gallium Selenide P-N knot layer
2Se
3
The amorphous silicon P-I-N knot layer thickness of thin-film solar cells of the present invention is reasonable in design, and the near infrared light spectrum energy can fully be absorbed by Copper Indium Gallium Selenide P-N knot layer, and therefore the power of thin-film solar cells provided by the invention improves greatly.In addition, outside the P type amorphous silicon layer of amorphous silicon P-I-N knot layer and N type amorphous silicon layer, be provided with respectively as thin as a wafer and heavily doped P
+Layer and N
+Layer has been strengthened the electric field strength in the I type amorphous silicon layer, has improved the power of thin-film solar cells.In amorphous silicon P-I-N knot layer, because the distribution of a large amount of space charge carriers at battery rete place causes the internal electric field in the amorphous silicon P-I-N knot layer to be twisted, the present invention is by being provided with P respectively outside the P type amorphous silicon layer of amorphous silicon P-I-N knot layer and N type amorphous silicon layer
+Layer and N
+Layer has been revised the internal electric field that whole amorphous silicon P-I-N ties layer, makes the internal electric field of amorphous silicon P-I-N knot layer more level and smooth, and field intensity numerical value is higher.Amorphous silicon P-I-N ties the internal electric field in the layer and sets up P
+Layer and N
+The curve synoptic diagram of the internal electric field in the amorphous silicon P-I-N knot layer of layer back is seen shown in Figure 1, and wherein E1 is not for establishing P
+Layer and N
+Internal electric field in amorphous silicon P-I-N knot layer during layer, E2 is for setting up P
+Layer and N
+Internal electric field in the amorphous silicon P-I-N knot layer of layer back, contrast E1 and E2 can find that E2 is more level and smooth, field intensity numerical value is higher.
It is about 1.5% that the thin-film solar cells of the more present binode layer structure of the same type of the power that thin-film solar cells provided by the invention produced on average improves, and conversion efficiency can reach more than 11.5%.Thin-film solar cells provided by the invention also has advantages such as the high and manufacturing price of reliability is low.
Description of drawings
Fig. 1 is for setting up P
+Layer and N
+The change curve schematic diagram of the internal electric field before and after the layer in the amorphous silicon P-I-N knot layer;
Fig. 2 is the structural representation of an embodiment of the present invention;
Fig. 3 is the energy frequency band curve chart of embodiment 1.
Embodiment
Embodiment 1
As shown in Figure 2, the thin-film solar cells of an embodiment of the present invention, the structure of this solar cell is: glass lined bottom 11/Mo dorsum electrode layer 10/P type CIGS thin-film layer 9/N type Copper Indium Gallium Selenide resilient coating 8/P
+Layer 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/ N
+Layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, P
+Layer 7, N type Copper Indium Gallium Selenide resilient coating 8 are absorbed fully by P type CIGS thin-film layer 9 afterwards.
Wherein, the thickness of amorphous silicon P-I-N knot layer is 100nm, and the thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=1:10:4.Heavily doped P
+The thickness of layer 7 is 1nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 7
20G/cm
3Heavily doped N
+The thickness of layer 3 is 15nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
22G/cm
3The thickness of P type CIGS thin-film layer 9 is 2.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 8 is 40nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 8 is ZnS in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 2
The film solar battery structure of present embodiment is identical with the film solar battery structure of embodiment 1, and structure is seen shown in Figure 2, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P type CIGS thin-film layer 9/N type Copper Indium Gallium Selenide resilient coating 8/P
+Layer 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/ N
+Layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, P
+Layer 7, N type Copper Indium Gallium Selenide resilient coating 8 are absorbed fully by P type CIGS thin-film layer 9 afterwards.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 360nm, and the thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=1:15:2.Heavily doped P
+The thickness of layer 7 is 10nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 7
22G/cm
3Heavily doped N
+The thickness of layer 3 is 1.5nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
20G/cm
3The thickness of P type CIGS thin-film layer 9 is 1.0um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 8 is 200nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 8 is ZnSe in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 3
The film solar battery structure of present embodiment is identical with the film solar battery structure of embodiment 1, and structure is seen shown in Figure 2, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P type CIGS thin-film layer 9/N type Copper Indium Gallium Selenide resilient coating 8/P
+Layer 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/ N
+Layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, P
+Layer 7, N type Copper Indium Gallium Selenide resilient coating 8 are absorbed fully by P type CIGS thin-film layer 9 afterwards.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 200nm, and the thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=2:12:3.Heavily doped P
+The thickness of layer 7 is 5nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 7
21G/cm
3Heavily doped N
+The thickness of layer 3 is 10nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
21G/cm
3The thickness of P type CIGS thin-film layer 9 is 1.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 8 is 50nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 8 is ZnIn in the Copper Indium Gallium Selenide P-N knot layer
2Se
3
In Fig. 3, Cb, Vb represent to set up P
+Layer and N
+The layer after battery can be with curve, promptly the embodiment of the invention 1 can be with curve, Ca, Va represent not to be provided with P
+Layer and N
+When layer battery can be with curve, C represents the conduction band, V represents electricity price band, E
F, bP is set up in expression
+Layer and N
+The Fermi level of the battery behind the layer, E
F, aExpression is not provided with P
+Layer and N
+The Fermi level of battery during layer.As can be seen from Figure 3, Cb, Vb energy barrier are narrower, and have higher energy barrier.
Claims (10)
1. thin-film solar cells, comprise substrate layer, be arranged on dorsum electrode layer, the tco layer on the substrate layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, it is characterized in that: described solar cell module comprises a Copper Indium Gallium Selenide P-N knot layer and an amorphous silicon P-I-N knot layer, the P type CIGS thin-film layer of described Copper Indium Gallium Selenide P-N knot layer is arranged on the dorsum electrode layer, is provided with heavily doped P between the P type amorphous silicon layer of the N type Copper Indium Gallium Selenide resilient coating of described Copper Indium Gallium Selenide P-N knot layer and described amorphous silicon P-I-N knot layer
+Layer is provided with heavily doped N between the N type amorphous silicon layer of described amorphous silicon P-I-N knot layer and the described tco layer
+Layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/P
+Layer/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/N
+Layer/tco layer.
2. thin-film solar cells according to claim 1 is characterized in that: the thickness of described amorphous silicon P-I-N knot layer is 100nm～360nm.
3. thin-film solar cells according to claim 1 and 2 is characterized in that: the thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the described amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
4. thin-film solar cells according to claim 1 is characterized in that: described heavily doped P
+The thickness of layer is 1nm～10nm.
5. according to claim 1 or 4 described thin-film solar cells, it is characterized in that: described heavily doped P
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
6. thin-film solar cells according to claim 1 is characterized in that: described heavily doped N
+The thickness of layer is 1.5nm～15nm.
7. according to claim 1 or 6 described thin-film solar cells, it is characterized in that: described heavily doped N
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
8. thin-film solar cells according to claim 1 is characterized in that: the thickness of P type CIGS thin-film layer is 1.0um～2.5um in the described Copper Indium Gallium Selenide P-N knot layer.
9. thin-film solar cells according to claim 1 is characterized in that: the thickness of N type Copper Indium Gallium Selenide resilient coating is 40nm～200nm in the described Copper Indium Gallium Selenide P-N knot layer.
10. according to claim 1 or 9 described thin-film solar cells, it is characterized in that: the material of N type Copper Indium Gallium Selenide resilient coating is ZnS, ZnSe or ZnIn in the described Copper Indium Gallium Selenide P-N knot layer
2Se
3
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010236618 CN101901847B (en) | 2010-07-26 | 2010-07-26 | Thin-film solar cell |
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|---|---|---|---|
| CN 201010236618 CN101901847B (en) | 2010-07-26 | 2010-07-26 | Thin-film solar cell |
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|---|---|
| CN101901847A true CN101901847A (en) | 2010-12-01 |
| CN101901847B CN101901847B (en) | 2012-02-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515464A (en) * | 2013-11-04 | 2014-01-15 | 宁夏东旭太阳能科技有限公司 | Efficient outer space superconduction solar cell |
| CN106601843A (en) * | 2016-11-29 | 2017-04-26 | 梁结平 | Copper-indium-gallium-selenium photoelectric conversion device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368892B1 (en) * | 1997-07-28 | 2002-04-09 | Bp Corporation North America Inc. | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
-
2010
- 2010-07-26 CN CN 201010236618 patent/CN101901847B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368892B1 (en) * | 1997-07-28 | 2002-04-09 | Bp Corporation North America Inc. | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515464A (en) * | 2013-11-04 | 2014-01-15 | 宁夏东旭太阳能科技有限公司 | Efficient outer space superconduction solar cell |
| CN103515464B (en) * | 2013-11-04 | 2016-03-02 | 宁夏东旭太阳能科技有限公司 | Space efficient superconductive solar battery |
| CN106601843A (en) * | 2016-11-29 | 2017-04-26 | 梁结平 | Copper-indium-gallium-selenium photoelectric conversion device |
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| Publication number | Publication date |
|---|---|
| CN101901847B (en) | 2012-02-15 |
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