CN101919004A - 读取、验证字线参考电压以跟踪源极电平 - Google Patents
读取、验证字线参考电压以跟踪源极电平 Download PDFInfo
- Publication number
- CN101919004A CN101919004A CN2008801221470A CN200880122147A CN101919004A CN 101919004 A CN101919004 A CN 101919004A CN 2008801221470 A CN2008801221470 A CN 2008801221470A CN 200880122147 A CN200880122147 A CN 200880122147A CN 101919004 A CN101919004 A CN 101919004A
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- voltage
- word line
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- source
- source electrode
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/961,917 US7701761B2 (en) | 2007-12-20 | 2007-12-20 | Read, verify word line reference voltage to track source level |
US11/961,917 | 2007-12-20 | ||
PCT/US2008/086870 WO2009085705A1 (en) | 2007-12-20 | 2008-12-15 | Read, verify word line reference voltage to track source level |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101919004A true CN101919004A (zh) | 2010-12-15 |
CN101919004B CN101919004B (zh) | 2014-01-22 |
Family
ID=40383798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880122147.0A Expired - Fee Related CN101919004B (zh) | 2007-12-20 | 2008-12-15 | 读取、验证字线参考电压以跟踪源极电平 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7701761B2 (zh) |
EP (1) | EP2223303B1 (zh) |
JP (1) | JP5086443B2 (zh) |
KR (1) | KR101425564B1 (zh) |
CN (1) | CN101919004B (zh) |
TW (1) | TWI391948B (zh) |
WO (1) | WO2009085705A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7701761B2 (en) * | 2007-12-20 | 2010-04-20 | Sandisk Corporation | Read, verify word line reference voltage to track source level |
US7764547B2 (en) * | 2007-12-20 | 2010-07-27 | Sandisk Corporation | Regulation of source potential to combat cell source IR drop |
KR101669550B1 (ko) * | 2009-09-10 | 2016-10-26 | 삼성전자주식회사 | 공통 소스 라인의 노이즈를 줄이는 플래시 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8559231B2 (en) | 2011-03-08 | 2013-10-15 | Micron Technology, Inc. | Sense operation in a stacked memory array device |
KR101861084B1 (ko) | 2011-07-11 | 2018-05-28 | 삼성전자주식회사 | 비휘발성 메모리 장치, 이의 동작 방법, 및 비휘발성 메모리 장치를 포함하는 전자 장치 |
TWI459390B (zh) * | 2011-09-26 | 2014-11-01 | Winbond Electronics Corp | 半導體記憶裝置 |
US9257154B2 (en) | 2012-11-29 | 2016-02-09 | Micron Technology, Inc. | Methods and apparatuses for compensating for source voltage |
US9218883B2 (en) * | 2013-03-15 | 2015-12-22 | West Virginia University | Continuous-time floating gate memory cell programming |
US9583183B2 (en) * | 2014-09-26 | 2017-02-28 | Sandisk Technologies Llc | Reading resistive random access memory based on leakage current |
US10262744B2 (en) | 2016-08-11 | 2019-04-16 | SK Hynix Inc. | Layer-based memory controller optimizations for three dimensional memory constructs |
TWI666647B (zh) * | 2018-09-03 | 2019-07-21 | 瑞昱半導體股份有限公司 | 記憶體裝置 |
KR20230085625A (ko) * | 2021-12-07 | 2023-06-14 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
Citations (4)
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WO2001063618A1 (en) * | 2000-02-25 | 2001-08-30 | Advanced Micro Devices, Inc. | Wordline driver for flash memory read mode |
US20060221693A1 (en) * | 2005-04-01 | 2006-10-05 | Raul-Adrian Cernea | Non-volatile memory and method with compensation for source line bias errors |
CN1877742A (zh) * | 2005-06-10 | 2006-12-13 | 旺宏电子股份有限公司 | 非易失存储器补偿读取源极线的装置 |
CN1905074A (zh) * | 2005-07-27 | 2007-01-31 | 松下电器产业株式会社 | 半导体存储器件 |
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IT1224062B (it) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5070032A (en) * | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
EP0392895B1 (en) * | 1989-04-13 | 1995-12-13 | Sundisk Corporation | Flash EEprom system |
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5343063A (en) * | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
JP3210355B2 (ja) * | 1991-03-04 | 2001-09-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
GB2260422B (en) * | 1991-10-09 | 1995-03-08 | Israel State | Foldable optical apparatus |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5315541A (en) * | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5555204A (en) * | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
US5661053A (en) * | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
JP3359209B2 (ja) * | 1995-11-29 | 2002-12-24 | シャープ株式会社 | 半導体記憶装置及びメモリアクセス方法 |
US5903495A (en) * | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US5790453A (en) * | 1996-10-24 | 1998-08-04 | Micron Quantum Devices, Inc. | Apparatus and method for reading state of multistate non-volatile memory cells |
JP3134798B2 (ja) * | 1996-11-15 | 2001-02-13 | 日本電気株式会社 | 電圧発生回路 |
US5986931A (en) | 1997-01-02 | 1999-11-16 | Caywood; John M. | Low voltage single CMOS electrically erasable read-only memory |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP3409049B2 (ja) * | 1997-08-22 | 2003-05-19 | Necエレクトロニクス株式会社 | 不揮発性半導体メモリ装置 |
JP3486079B2 (ja) * | 1997-09-18 | 2004-01-13 | 株式会社東芝 | 半導体記憶装置 |
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US6373753B1 (en) * | 1999-02-13 | 2002-04-16 | Robert J. Proebsting | Memory array having selected word lines driven to an internally-generated boosted voltage that is substantially independent of VDD |
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US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US6987693B2 (en) * | 2002-09-24 | 2006-01-17 | Sandisk Corporation | Non-volatile memory and method with reduced neighboring field errors |
US7046568B2 (en) * | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
KR100884235B1 (ko) | 2003-12-31 | 2009-02-17 | 삼성전자주식회사 | 불휘발성 메모리 카드 |
JP4322686B2 (ja) * | 2004-01-07 | 2009-09-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2005285197A (ja) * | 2004-03-29 | 2005-10-13 | Renesas Technology Corp | 半導体記憶装置 |
KR100559716B1 (ko) * | 2004-04-01 | 2006-03-10 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 소자 및 이의 독출 방법 |
KR100612569B1 (ko) * | 2005-03-10 | 2006-08-11 | 주식회사 하이닉스반도체 | 향상된 프리-프로그램 기능을 가지는 플래쉬 메모리 장치및 그 프리-프로그램 동작 제어방법 |
US7170784B2 (en) | 2005-04-01 | 2007-01-30 | Sandisk Corporation | Non-volatile memory and method with control gate compensation for source line bias errors |
JP2007080306A (ja) * | 2005-09-09 | 2007-03-29 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7606076B2 (en) | 2007-04-05 | 2009-10-20 | Sandisk Corporation | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
US7606071B2 (en) | 2007-04-24 | 2009-10-20 | Sandisk Corporation | Compensating source voltage drop in non-volatile storage |
US7492640B2 (en) | 2007-06-07 | 2009-02-17 | Sandisk Corporation | Sensing with bit-line lockout control in non-volatile memory |
US7489553B2 (en) | 2007-06-07 | 2009-02-10 | Sandisk Corporation | Non-volatile memory with improved sensing having bit-line lockout control |
US7701761B2 (en) * | 2007-12-20 | 2010-04-20 | Sandisk Corporation | Read, verify word line reference voltage to track source level |
US7764547B2 (en) * | 2007-12-20 | 2010-07-27 | Sandisk Corporation | Regulation of source potential to combat cell source IR drop |
US7593265B2 (en) | 2007-12-28 | 2009-09-22 | Sandisk Corporation | Low noise sense amplifier array and method for nonvolatile memory |
-
2007
- 2007-12-20 US US11/961,917 patent/US7701761B2/en not_active Expired - Fee Related
-
2008
- 2008-12-15 CN CN200880122147.0A patent/CN101919004B/zh not_active Expired - Fee Related
- 2008-12-15 EP EP08869086.2A patent/EP2223303B1/en not_active Not-in-force
- 2008-12-15 JP JP2010539684A patent/JP5086443B2/ja active Active
- 2008-12-15 WO PCT/US2008/086870 patent/WO2009085705A1/en active Application Filing
- 2008-12-15 KR KR1020107013248A patent/KR101425564B1/ko active IP Right Grant
- 2008-12-19 TW TW097149960A patent/TWI391948B/zh not_active IP Right Cessation
-
2010
- 2010-03-02 US US12/715,858 patent/US8054681B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001063618A1 (en) * | 2000-02-25 | 2001-08-30 | Advanced Micro Devices, Inc. | Wordline driver for flash memory read mode |
US20060221693A1 (en) * | 2005-04-01 | 2006-10-05 | Raul-Adrian Cernea | Non-volatile memory and method with compensation for source line bias errors |
CN1877742A (zh) * | 2005-06-10 | 2006-12-13 | 旺宏电子股份有限公司 | 非易失存储器补偿读取源极线的装置 |
CN1905074A (zh) * | 2005-07-27 | 2007-01-31 | 松下电器产业株式会社 | 半导体存储器件 |
Also Published As
Publication number | Publication date |
---|---|
EP2223303A1 (en) | 2010-09-01 |
US20100157681A1 (en) | 2010-06-24 |
US7701761B2 (en) | 2010-04-20 |
JP5086443B2 (ja) | 2012-11-28 |
WO2009085705A1 (en) | 2009-07-09 |
KR101425564B1 (ko) | 2014-08-04 |
EP2223303B1 (en) | 2014-08-06 |
US8054681B2 (en) | 2011-11-08 |
CN101919004B (zh) | 2014-01-22 |
US20090161434A1 (en) | 2009-06-25 |
TWI391948B (zh) | 2013-04-01 |
TW200937444A (en) | 2009-09-01 |
JP2011508355A (ja) | 2011-03-10 |
KR20100112116A (ko) | 2010-10-18 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK CORPORATION Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120706 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120706 Address after: Texas, USA Applicant after: SANDISK TECHNOLOGIES Inc. Address before: California, USA Applicant before: Sandisk Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: SANDISK TECHNOLOGIES LLC Address before: Texas, USA Patentee before: SANDISK TECHNOLOGIES Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140122 Termination date: 20211215 |