CN101936433A - Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell - Google Patents
Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell Download PDFInfo
- Publication number
- CN101936433A CN101936433A CN2010102343934A CN201010234393A CN101936433A CN 101936433 A CN101936433 A CN 101936433A CN 2010102343934 A CN2010102343934 A CN 2010102343934A CN 201010234393 A CN201010234393 A CN 201010234393A CN 101936433 A CN101936433 A CN 101936433A
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- CN
- China
- Prior art keywords
- pipe
- exhaust pipe
- joint
- offgas duct
- tail pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an exhaust pipe joint of a diffusion furnace for producing a crystalline silicon solar cell, which comprises a joint body. The inner bore of the joint is divided into an exhaust pipe bonding section and a tail pipe bonding section of a large quartz pipe; the internal diameter of the tail pipe bonding section of the large quartz pipe is greater than that of the exhaust pipe bonding section; and the joint body is provided with a protective gas hole which is communicated with the tail pipe bonding section of the large quartz pipe at the end in the joint body. The exhaust pipe joint has the advantages of simple structure, convenient manufacturing, capability of effectively preventing the tail pipe of the large quartz pipe from bonding with the exhaust pipe, and convenient disassembly and replacement; and through repeated verification of a field process, the structure cannot have any negative effect on product quality.
Description
Technical field
The present invention relates to the offgas duct joint of a kind of crystal-silicon solar cell production with diffusion furnaces.
Background technique
At present the crystal-silicon solar cell commercially produced of maturation is simple with its technological process, is convenient to advantage such as mass production and develops rapidly.A this extremely important operation commercially producing crystal-silicon solar cell is to adopt diffusion technique to mix at silicon chip surface, control certain diffusion depth, form the P-N knot of battery, has the production capacity advantages of higher that technology is simple, equipment and technology is full-fledged, automaticity is high, spread product, thereby can reduce production costs, make crystal-silicon solar cell move towards rapidly to commercially produce.But, because the formation of diffusion by product, cause discharging the offgas duct 1 of tail gas and tail pipe 2 bondings of big quartz tube, stop up when offgas duct, when causing exhaust emissions not smooth, change inconvenient, take time and effort, uniformity and stability that this has not only influenced diffusion technique have also prolonged equipment when the machine time, influence the production production capacity.
The employed diffusion furnaces offgas duct of solar cells industry interface is the joint of common straight-through or exotic materials such as reducing PVDF or PFA at present, this joint can not solve the offgas duct adhesion problem, as shown in Figure 1, byproduct of reaction is the area deposition between the tail pipe 2 of offgas duct 1 and big quartz tube easily, and the tail pipe of big quartz tube and the offgas duct of exhaust are bonded together.
Summary of the invention
Technical problem to be solved by this invention is, has overcome the only simple connection seal action of existing ordinary couplings, provides a kind of and can introduce air protection, prevent byproduct of reaction in the condensation of tail pipe place, cause the joint of offgas duct bonding.The present invention introduces gas dynamics, plays and isolates the effect of byproduct of reaction outside local space, thereby avoid by product to deposit at local space, has effectively prevented the bonding of offgas duct.
The present invention is in order to solve the problems of the technologies described above, the technological scheme that is adopted is: the crystal-silicon solar cell production offgas duct joint (being called for short the offgas duct joint) of diffusion furnaces, comprise fittings body, it is characterized in that: the endoporus of fittings body is divided into the tail pipe adapter section of offgas duct adapter section and big quartz tube, and the internal diameter of the tail pipe adapter section of big quartz tube is greater than the internal diameter of offgas duct adapter section; Have the protection pore on fittings body, the tail pipe adapter section of protection pore and big quartz tube is in the end of fittings body inside UNICOM.
During use, the offgas duct adapter section of offgas duct joint endoporus is combined with offgas duct, the tail pipe adapter section of big quartz tube is combined with the tail pipe of big quartz tube, will protect pore and the connection of protection source of the gas.Feed protection gas by the protection pore, the tail pipe of big quartz tube and the offgas duct zone of exhaust are under the atmosphere of protection gas gas, stop byproduct of reaction to be deposited on herein, to reach the purpose that prevents two pipe bondings.
Offgas duct joint of the present invention, simple in structure, easy to prepare, can effectively prevent the tail pipe of big quartz tube and the offgas duct bonding of exhaust, joint disassembly is changed convenient.Through experimental verification, this structure can not produce any negative effect to quality of product, on the contrary, the lifting and the process stabilizing of product quality parameters is all had certain benefit.
Description of drawings
Fig. 1 is the offgas duct joint structure schematic representation of prior art;
Fig. 2 is the offgas duct joint structure schematic representation of crystal-silicon solar cell production of the present invention with diffusion furnaces;
Fig. 3 is the offgas duct joint user mode schematic representation of crystal-silicon solar cell production of the present invention with diffusion furnaces.
Embodiment
Below in conjunction with drawings and Examples the present invention is elaborated.
Embodiment:
As shown in Figure 2, the crystal-silicon solar cell production offgas duct joint of diffusion furnaces, comprise fittings body 3, it is characterized in that: the endoporus of fittings body is divided into the tail pipe adapter section 5 of offgas duct adapter section 4 and big quartz tube, and the internal diameter of the tail pipe adapter section 5 of big quartz tube is greater than the internal diameter of offgas duct adapter section 4; Have protection pore 6 on fittings body, the tail pipe adapter section of protection pore and big quartz tube is in the end of fittings body inside 7 UNICOMs.
As shown in Figure 3, during use, the offgas duct adapter section of offgas duct joint endoporus is combined with offgas duct, the tail pipe adapter section of big quartz tube is combined with the tail pipe of big quartz tube, will protect pore and the connection of protection source of the gas.Feed protection gas by the protection pore, the tail pipe of big quartz tube and the offgas duct zone of exhaust are under the atmosphere of protection gas gas, stop byproduct of reaction to be deposited on herein, to reach the purpose that prevents two pipe bondings.
Claims (1)
1. a crystal-silicon solar cell production is with the offgas duct joint of diffusion furnaces, comprise fittings body (3), it is characterized in that: the endoporus of fittings body is divided into the tail pipe adapter section (5) of offgas duct adapter section (4) and big quartz tube, and the internal diameter of the tail pipe adapter section of big quartz tube is greater than the internal diameter of offgas duct adapter section; Have protection pore (6) on fittings body, the tail pipe adapter section of protection pore and big quartz tube is in the end (7) of fittings body inside UNICOM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102343934A CN101936433A (en) | 2010-07-23 | 2010-07-23 | Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102343934A CN101936433A (en) | 2010-07-23 | 2010-07-23 | Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101936433A true CN101936433A (en) | 2011-01-05 |
Family
ID=43389916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102343934A Pending CN101936433A (en) | 2010-07-23 | 2010-07-23 | Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101936433A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
| JP2001141143A (en) * | 1999-11-10 | 2001-05-25 | Taiyo Toyo Sanso Co Ltd | Pipe joint structure in clean gas feed line |
| CN1424250A (en) * | 2002-12-24 | 2003-06-18 | 西安交通大学 | Process for growing and purifying carbon nano tube by thermolysis with resistor furnace with single temperature zone |
| CN101136325A (en) * | 2006-08-31 | 2008-03-05 | 上海航天汽车机电股份有限公司 | Semi-conductor silicon chip liquid stage source diffusion furnace |
-
2010
- 2010-07-23 CN CN2010102343934A patent/CN101936433A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
| JP2001141143A (en) * | 1999-11-10 | 2001-05-25 | Taiyo Toyo Sanso Co Ltd | Pipe joint structure in clean gas feed line |
| CN1424250A (en) * | 2002-12-24 | 2003-06-18 | 西安交通大学 | Process for growing and purifying carbon nano tube by thermolysis with resistor furnace with single temperature zone |
| CN101136325A (en) * | 2006-08-31 | 2008-03-05 | 上海航天汽车机电股份有限公司 | Semi-conductor silicon chip liquid stage source diffusion furnace |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20110105 |