CN102009943B - Microelectronic device and manufacturing method of micro-electromechanical resonator thereof - Google Patents
Microelectronic device and manufacturing method of micro-electromechanical resonator thereof Download PDFInfo
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- CN102009943B CN102009943B CN200910171679XA CN200910171679A CN102009943B CN 102009943 B CN102009943 B CN 102009943B CN 200910171679X A CN200910171679X A CN 200910171679XA CN 200910171679 A CN200910171679 A CN 200910171679A CN 102009943 B CN102009943 B CN 102009943B
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Abstract
The invention relates to a microelectronic device and a manufacturing method of a micro-electromechanical resonator thereof. The manufacturing method of the micro-electromechanical resonator comprises the following steps of: firstly forming a laminated main body with a part to be suspended, wherein the laminated main body comprises a silicon substrate, multiple metal layers, an isolated layer and a first etching channel, the first etching channel extends from the multiple metal layers into the silicon substrate, and the isolated layer is filled in the first etching channel; then removing a part of the isolated layer to form a second etching channel, wherein the remaining part of the isolated layer covers on the side wall of the first etching channel; and then isotropically etching the silicon substrate through the second etching channel by taking the isolated layer covering on the side wall of the first etching channel as a mask so as to form the micro-electromechanical resonator suspended on the silicon substrate. The manufacturing method of the micro-electromechanical resonator can be integrated with a manufacturing process of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit so as to simplify the manufacturing process of the microelectronic device, thereby further reducing the production cost of the microelectronic device. Besides, the invention also provides the microelectronic device.
Description
Technical field
The present invention relates to the manufacture method of a kind of microelectronic device and micro-electromechanical resonator thereof, particularly relate to and a kind ofly having than the manufacture method of microelectronic device and the micro-electromechanical resonator thereof of low production cost.
Background technology
MEMS (Micro Electromechanical System, MEMS) a brand-new technical field and industry have been opened up in the development of technology, it has been widely used in various microelectronic devices with electronics and mechanical double grading, such as pressure inductor, accelerator and mini microphone etc.
In the known manufacturing process of these microelectronic devices, normally micro-electromechanical resonator and cmos circuit are respectively formed in different substrates, then the two are packaged together and form microelectronic device.Yet this kind practice is comparatively loaded down with trivial details, cause the production cost of above-mentioned microelectronic device to be difficult to reduce.
As can be seen here, the manufacture method of above-mentioned existing microelectronic device and micro-electromechanical resonator thereof, in structure and use, obviously still has inconvenience and defect, and urgently is further improved.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but have no for a long time applicable design is completed by development always, and common product does not have appropriate structure to address the above problem, therefore, how to improve the manufacture method of micro-electromechanical resonator, to simplify the whole manufacturing process of microelectronic device, thereby reduce the production cost of microelectronic device, this is obviously the problem that the anxious wish of relevant dealer solves.Therefore how to found a kind of new microelectronic device and the manufacture method of micro-electromechanical resonator thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The object of the invention is to, overcome the defect of the manufacture method existence of existing micro-electromechanical resonator, and provide a kind of manufacture method of new micro-electromechanical resonator, technical problem to be solved is to make it simplify the manufacturing process of microelectronic device, thereby reduce the production cost of microelectronic device, be very suitable for practicality.
Another object of the present invention is to, a kind of new microelectronic device is provided, technical problem to be solved is to make it have lower production cost, thereby more is suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.The manufacture method of the micro-electromechanical resonator proposed according to the present invention, it is first to form to have the stacked main body for the treatment of suspension section, and it comprises silicon base, multiple layer metal layer and separation layer, and wherein insulating barrier is formed on silicon base, and metal level is formed on insulating barrier.And stacked main body has at least one the first etched channels, it is in metal level extends to silicon base.Separation layer fills in the first etched channels.Then, remove the part separation layer, expose silicon base to form the second etched channels, and the remaining partial coverage of separation layer is lived the sidewall of the first etched channels.Then, the separation layer that is covered in the first etched channels sidewall of take is mask, by the second etched channels isotropic etching silicon base, to remove the part silicon base of subordinate side to be suspended.Wherein, the method for the stacked main body of formation comprises: silicon base is provided; On silicon base, form insulating barrier; Remove the insulating barrier of part and the silicon base of part, to form at least one the first opening; In the first opening, insert one first oxide layer; And on insulating barrier, sequentially form these metal levels, and each these metal levels have respectively at least one the second opening that is filled with one second oxide layer, be positioned at the first opening top, wherein the first oxide layer and these the second oxide layers form this separation layer, the first opening and these the second openings form this first etched channels, and one of them is less than the first opening to these second openings at least, one of them protrudes from the first opening top at least and make these metal levels.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid micro-electromechanical resonator, the method that wherein forms this first etched channels is anisotropic etching.
The manufacture method of aforesaid micro-electromechanical resonator, the method that wherein removes this separation layer of part is the deep reactive ion etch method.
The manufacture method of aforesaid micro-electromechanical resonator, wherein the method by this this silicon base inside of the second etched channels isotropic etching comprises employing xenon fluoride gas etch.
The manufacture method of aforesaid micro-electromechanical resonator, wherein this stacked main body more comprises an insulating barrier, is formed between those metal levels and this silicon base.
The manufacture method of aforesaid micro-electromechanical resonator, in the manufacturing process that forms this second etched channels, is wherein that this metal level that protrudes from this first opening top removes this separation layer of part as mask.
The manufacture method of aforesaid micro-electromechanical resonator, wherein the material of this insulating barrier is the polysilicon of non-doping.
The manufacture method of aforesaid micro-electromechanical resonator, wherein those metal levels comprise aluminium lamination and tungsten layer.
The manufacture method of aforesaid micro-electromechanical resonator, wherein the material of this separation layer is silica.
The manufacture method of aforesaid micro-electromechanical resonator, wherein the first etched channels of this stacked main body is a plurality of, lays respectively at the both sides that this treats suspension section.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of microelectronic device that the present invention proposes, it comprises silicon base, cmos circuit and micro-electromechanical resonator.Wherein, cmos circuit is formed on silicon base.Silicon base has the erosion dead zone, micro-electromechanical resonator be suspended in this erosion dead zone top and with cmos circuit at least one second etched channels of being separated by.Wherein, the second etched channels is communicated with the etching region of silicon base.Micro-electromechanical resonator comprises silicon layer, multiple layer metal layer and separation layer.Wherein, these metal levels are disposed at the silicon layer top, and separation layer is covered on the sidewall of silicon layer and these metal levels.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid microelectronic device, wherein this micro-electromechanical resonator more comprises an insulating barrier, is disposed between this silicon layer and those metal levels.
Aforesaid microelectronic device, wherein the material of this insulating barrier is the polysilicon of non-doping.
Aforesaid microelectronic device, wherein those metal levels comprise a plurality of the first metal layers and a plurality of the second metal level, and those the first metal layers and those the second metal levels this silicon layer top that is stacked in interlaced with each other.
Aforesaid microelectronic device, wherein the material of those the first metal layers is tungsten.
Aforesaid microelectronic device, wherein the material of those the second metal levels is aluminium.
Aforesaid microelectronic device, wherein the material of this separation layer is silica.
By technique scheme, the manufacture method of microelectronic device of the present invention and micro-electromechanical resonator thereof has following advantages and beneficial effect at least:
1, the manufacture method of micro-electromechanical resonator of the present invention can be integrated mutually with the manufacture process of cmos circuit, with when manufacturing microelectronic device, by micro-electromechanical resonator and cmos circuit integration and making in same substrate, simplify by this manufacturing process of microelectronic device, and then reduce the production cost of microelectronic device.
2, micro-electromechanical resonator of the present invention comprises the tired silicon layer of high temperature resistant and difficult generation material, therefore can have good task performance.
In sum, the present invention has significant progress technically, and has obvious good effect, is really a new and innovative, progressive, practical new design.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
The accompanying drawing explanation
Figure 1A to Fig. 1 C illustrates the generalized section of micro-electromechanical resonator in manufacturing process in one embodiment of the invention.
Fig. 2 A to Fig. 2 C illustrates the generalized section of stacked main body in manufacturing process in one embodiment of the invention.
Fig. 3 illustrates the cut-away section schematic diagram into microelectronic device in another embodiment of the present invention.
10: microelectronic device 100: micro-electromechanical resonator
11: stacked main body 110: treat suspension section
12: silicon base 120: the erosion dead zone
121: silicon layer 13: insulating barrier
14: metal level 140: tungsten layer
141: 142: the first etched channels of aluminium lamination
1424: the second openings of 1422: the first openings
Etched channels 16 in 144: the second: separation layer
164: the second oxide layers of 162: the first oxide layers
The specific embodiment
For further setting forth the present invention, reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, the specific embodiment, structure, feature and the effect thereof of the microelectronic device that foundation the present invention is proposed and the manufacture method of micro-electromechanical resonator thereof, be described in detail as follows.
Figure 1A to Fig. 1 C illustrates the generalized section of micro-electromechanical resonator in manufacturing process in one embodiment of the invention.Refer to shown in Figure 1A, the manufacture method implementing procedure of the micro-electromechanical resonator of the present embodiment is first to form stacked main body 11, and it comprises silicon base 12, multiple layer metal layer 14 and separation layer 16, and has the suspension for the treatment of section 110.Wherein, metal level 14 is formed on silicon base 12, and for fear of metal level 14 and the mutual short circuit of silicon base 12, the present embodiment is to be formed with insulating barrier 13 between metal level 14 and silicon base 12, and its material is for example the polysilicon of non-doping.Stacked main body 11 has the first etched channels 142, and it is in metal level 14 extends to silicon base 12.16 of separation layers are to fill in the first etched channels 142.The metal level 14 that it is pointed out that the present embodiment has two the first etched channels 142, lay respectively at the both sides for the treatment of suspension section 110, but the present invention is not defined in this by the quantity of the first etched channels 142.
Hold above-mentionedly, these metal levels 14 can comprise tungsten layer 140 and the aluminium lamination 141 be staggeredly stacked, and the material of separation layer 16 can be silica.Fig. 2 A to Fig. 2 C illustrates the generalized section of stacked main body in manufacturing process in one embodiment of the invention.Refer to Fig. 2 A, in the present embodiment, the method that forms stacked main body 11 is that silicon base 12 first is provided, then on silicon base 12, form insulating barrier 13, and then remove the silicon base 12 and insulating barrier 13 of part, to form the first opening 1422, and in the first opening 1422, insert the first oxide layer 162.
Refer to Fig. 2 B to Fig. 2 C, on silicon base 12, sequentially form multiple layer metal layer 14, and each metal level 14 has respectively the second opening 1424 that is filled with the second oxide layer 164 and is positioned at the first opening 1422 tops.Wherein, the first oxide layer 162 and the second oxide layer 164 form separation layer 16, the first openings 1422 and form the first etched channels 142 with a plurality of the second openings 1424.
Specifically, the present embodiment, after forming the first oxide layer 162, first forms the tungsten layer 140 with second opening 1424, then again in interior filling the second oxide layer 164 of the second opening 1424, as shown in Fig. 2 B in substrate 12.Wherein, the second opening 1424 is positioned at the first opening 1422 tops.Then, on tungsten layer 140, form the aluminium lamination 141 that has equally the second opening 1424, then in another second oxide layer 164 of the interior filling of this second opening 1424, as shown in Figure 2 C.So repeat above-mentioned steps, can form the multiple layer metal layer 14 shown in Figure 1A and be filled in the separation layer 16 in the first etched channels 142.Wherein, the formation method of the first opening 1422 and the second opening 1424 can be the anisotropic etching method.
Specifically, by the first etched channels 142 that the first opening 1422 and the second opening 1424 form, its degree of depth extended in silicon base 12 can be determined according to the target capabilities of the micro-electromechanical resonator wanting to make.Specifically, if the micro-electromechanical resonator wanting to make need have high resonant frequency, can deepen the first etched channels 142 and extend to the degree of depth in silicon base 12.
Refer to shown in Figure 1B, after forming stacked main body 11, continue and namely remove part separation layer 16, expose silicon base 12 to form the second etched channels 144, the remaining part of separation layer 16 covers the sidewall of the first etched channels 142.Specifically, the method that removes part separation layer 16 can be deep reactive ion etch method (Deep Reactive Ion Etching, DRIE).
It is worth mentioning that, in order on the sidewall in the first etched channels 142, to stay the separation layer 16 of part, in the process that forms stacked main body 11, the size that can control the second opening 1424 of at least one layer of metal level 14 is less than the size of the first opening 1422, and makes one deck metal level 14 at least protrude from the first opening 1422 tops.Thus, when forming the second etched channels 144, namely can as mask, remove part separation layer 16 by this metal level 14 that protrudes from the first opening 1422 tops, and then stay part separation layer 16 on the sidewall of the first etched channels 142.
Please again consult Figure 1A and Fig. 2 C, the present embodiment is for example by the dimension D of the second opening 1424 of aluminium lamination 141
2Be designed to be less than the dimension D of the first opening 1422 of silicon base 12
1, but the present invention is not limited thereto.In other embodiments, can be also being designed and sized to of the second opening 1424 of tungsten layer 140 to be less than to the size of the first opening 1422 of silicon base 12.Certainly, the present invention more can be designed to tungsten layer 140 and the size of the second opening 1424 of aluminium lamination 141 be less than the size of the first opening 1422 in the lump.
In addition, the present invention does not also limit the mask while with which layer metal level 14 being used as removing part separation layer 16, and preamble is only one embodiment of the invention.Haveing the knack of this skill person can adjust according to actual demand voluntarily.
Refer to Fig. 1 C, the separation layer 16 of the sidewall that is covered in the first etched channels 142 of take is mask, by the second etched channels 144 isotropic etching silicon base 12, to remove the part silicon base 12 for the treatment of suspension section 110 belows, and in the interior formation erosion of silicon base 12 dead zone 120.This namely roughly completes the micro-electromechanical resonator 100 that is suspended at least in part silicon base 12 tops.Specifically, the method by the second etched channels 144 isotropic etching silicon base 12 inside can adopt xenon fluoride (XeF
2) the gas etch method.And; because the sidewall in the first etched channels 142 is formed with separation layer 16 as mask; therefore with the contacted part silicon base 12 of separation layer 16, can be protected and can etchedly not remove; thereby when the part silicon base 12 removed below suspension section 110, part silicon base 12 is retained in micro-electromechanical resonator 100.
From the above, because silicon materials are lattice structure, but high temperature resistance not only and is difficult for producing the tired problem of machinery, but therefore bottom be the micro-electromechanical resonator 100 that formed by silicon layer its have preferably service behaviour.Wherein, micro-electromechanical resonator 100 is for example radio freqnency resonator (RF Resonator).
Therefore from the above, the present invention makes micro-electromechanical resonator with the CMOS manufacturing process, and micro-electromechanical resonator of the present invention can be produced in same substrate with cmos circuit, follow-up in conjunction with manufacturing technology steps to save.For making to have the knack of this skill person, more understand the present invention, below the structure of microelectronic device of the present invention will be described for embodiment.
Fig. 3 illustrates the cut-away section schematic diagram into microelectronic device in another embodiment of the present invention.Refer to Figure 1A and shown in Figure 3, microelectronic device 10 comprises micro-electromechanical resonator 100 and cmos circuit 200.Wherein, cmos circuit 200 is for example to be formed on silicon base 12 with identical manufacturing process with stacked main body 11.Micro-electromechanical resonator 100 is suspended in 120 tops, erosion dead zone of silicon base 12, and it comprises silicon layer 121, multiple layer metal layer 14 and separation layer 16.Wherein, metal level 14 is consisted of with aluminium lamination 141 stacking tungsten layer 140 interlaced with each other, and is disposed at silicon layer 121 tops.In the present embodiment, micro-electromechanical resonator 100 also includes insulating barrier 13, and its material is for example the polysilicon of non-doping, is disposed between metal level 14 and silicon layer 121, between metal level 14 and silicon layer 121, is short-circuited avoiding.In addition, separation layer 16 is covered on the sidewall of silicon layer 121.Specifically, the separation layer 16 of the present embodiment also covers the sidewall of tungsten layer 140 and insulating barrier 13, and its material is for example silica.
It is worth mentioning that, micro-electromechanical resonator 100 is to be separated by with the second etched channels 144 with cmos circuit 200, and the erosion dead zone 120 in silicon base 12 is namely to form by the second etched channels 144 etchings.In other words, the second etched channels 144 is to be connected with the erosion dead zone 120 of silicon base 12 inside.
As can be seen here, the manufacture method of above-mentioned micro-electromechanical resonator 100 can be integrated mutually with the manufacture process of cmos circuit 200.In other words, micro-electromechanical resonator 100 can be formed on same silicon base 12 jointly with cmos circuit 200, so that in the process of making cmos circuit 200, carry out simultaneously the part manufacturing process of micro-electromechanical resonator 100.Thus, can reduce its production cost by the manufacturing process of simplifying microelectronic device 10.
In sum; in the manufacture method of micro-electromechanical resonator of the present invention; first at the sidewall formation separation layer of the first etched channels, to protect silicon base, so that the contacted part of silicon base and separation layer can be protected and can not be removed in the etching process that forms the erosion dead zone.Thus, after the etching manufacturing process of silicon base, formed micro-electromechanical resonator still can be possessed in bottom the silicon layer of part, and has preferably service behaviour.
In addition, the manufacture method of micro-electromechanical resonator of the present invention also can be integrated mutually with the manufacture process of cmos circuit, so that in same substrate, complete the manufacturing process of the microelectronic device that comprises micro-electromechanical resonator and cmos circuit, and then reduce the production cost of microelectronic device.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (7)
1. the manufacture method of a micro-electromechanical resonator, is characterized in that it comprises the following steps:
Form a stacked main body, it comprises a silicon base, multiple layer metal layer and at least one separation layer, wherein those metal levels are formed at this silicon base top, and this stacked main body has at least one the first etched channels in those metal levels extend to this silicon base, this separation layer is to fill in this first etched channels, and this stacked main body has the suspension for the treatment of section;
Remove this separation layer of part, to form one second etched channels, expose this silicon base, and the remaining part of this separation layer covers the sidewall of this first etched channels at least partly; And
This separation layer of the sidewall that is covered in this first etched channels of take is mask, by this this silicon base of the second etched channels isotropic etching, with this silicon base of part that removes this subordinate side to be suspended, and in this silicon base, forms an erosion dead zone;
Wherein, the method that forms this stacked main body comprises:
This silicon base is provided;
On this silicon base, form an insulating barrier;
Remove this insulating barrier of part and this silicon base of part, to form at least one the first opening;
In this first opening, insert one first oxide layer; And
On this insulating barrier, sequentially form those metal levels, and each those metal levels have respectively at least one the second opening that is filled with one second oxide layer, be positioned at this first opening top, wherein this first oxide layer and those the second oxide layers form this separation layer, this first opening and those the second openings form this first etched channels, and one of them is less than this first opening to those second openings at least, one of them protrudes from this first opening top at least and make those metal levels.
2. the manufacture method of micro-electromechanical resonator according to claim 1, the method that it is characterized in that wherein forming this first etched channels is anisotropic etching, and the method that removes this separation layer of part is the deep reactive ion etch method.
3. the manufacture method of micro-electromechanical resonator according to claim 1, is characterized in that wherein that method by this this silicon base inside of the second etched channels isotropic etching comprises to adopt the xenon fluoride gas etch.
4. the manufacture method of micro-electromechanical resonator according to claim 1, is characterized in that wherein the material of this insulating barrier is the polysilicon of non-doping.
5. the manufacture method of micro-electromechanical resonator according to claim 4, is characterized in that wherein being that this metal level that protrudes from this first opening top removes this separation layer of part as mask in the manufacturing process that forms this second etched channels.
6. the manufacture method of micro-electromechanical resonator according to claim 1, is characterized in that wherein those metal levels comprise aluminium lamination and tungsten layer, and the material of this separation layer is silica.
7. the manufacture method of micro-electromechanical resonator according to claim 1, is characterized in that wherein the first etched channels of this stacked main body is a plurality of, lays respectively at the both sides that this treats suspension section.
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| US8729646B2 (en) * | 2012-08-09 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS devices and methods for forming the same |
| TWI622267B (en) * | 2013-05-20 | 2018-04-21 | 村田製作所股份有限公司 | An improved microelectromechanical resonator |
Citations (5)
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|---|---|---|---|---|
| US6051866A (en) * | 1993-02-04 | 2000-04-18 | Cornell Research Foundation, Inc. | Microstructures and single mask, single-crystal process for fabrication thereof |
| US6180536B1 (en) * | 1998-06-04 | 2001-01-30 | Cornell Research Foundation, Inc. | Suspended moving channels and channel actuators for microfluidic applications and method for making |
| TW587059B (en) * | 2002-06-07 | 2004-05-11 | Ind Tech Res Inst | Manufacturing method of micro mechanical floating structure |
| CN1569609A (en) * | 2003-07-22 | 2005-01-26 | 陞达科技股份有限公司 | Method for producing microstructure using tellite |
| CN101447775A (en) * | 2007-11-28 | 2009-06-03 | 中国科学院半导体研究所 | Polycrystalline cubic-phase silicon carbide micro-electro-mechanical system resonant device and preparation method thereof |
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2009
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051866A (en) * | 1993-02-04 | 2000-04-18 | Cornell Research Foundation, Inc. | Microstructures and single mask, single-crystal process for fabrication thereof |
| US6180536B1 (en) * | 1998-06-04 | 2001-01-30 | Cornell Research Foundation, Inc. | Suspended moving channels and channel actuators for microfluidic applications and method for making |
| TW587059B (en) * | 2002-06-07 | 2004-05-11 | Ind Tech Res Inst | Manufacturing method of micro mechanical floating structure |
| CN1569609A (en) * | 2003-07-22 | 2005-01-26 | 陞达科技股份有限公司 | Method for producing microstructure using tellite |
| CN101447775A (en) * | 2007-11-28 | 2009-06-03 | 中国科学院半导体研究所 | Polycrystalline cubic-phase silicon carbide micro-electro-mechanical system resonant device and preparation method thereof |
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