CN102033330A

CN102033330A - High speed optical shutter and method of operating the same and apparatus comprising the same

Info

Publication number: CN102033330A
Application number: CN2010101578171A
Authority: CN
Inventors: 朴勇和; 亚历山大·戈雷洛夫; 斯塔尼斯拉夫·施蒂科夫; 亚历山大·希兰科夫
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2009-09-25
Filing date: 2010-03-31
Publication date: 2011-04-27
Anticipated expiration: 2030-03-31
Also published as: JP5788642B2; CN102033330B; JP2011070155A

Abstract

A high speed optical shutter, a method of operating the high speed optical shutter, and an optical apparatus including the high speed optical shutter. The optical shutter includes a transparent electro-optical medium in an active solid state having a total internal reflection surface on which an angle of total internal reflection is changed by an external action. The transparent electro-optical medium may be a prism or a prism array whose angle of total internal reflection is changed by the external action. An incident light path changing unit may be further arranged in front of the transparent electro-optical medium. Also, a light path changing unit may be further arranged so as to allow light passing through the electro-optical medium to be perpendicularly incident on an incidence target object.

Description

High speed optical shutter and method of operating thereof and optical devices

Technical field

The included one exemplary embodiment of the disclosure relates to optical device, more specifically, and the optical devices of relate to a kind of high speed optical shutter, operating the method for this high speed optical shutter and comprise this high speed optical shutter.

Background technology

Be used for according to the control signal transmission or stop that the optical shutter of optical imagery is the important optical module that is widely used in camera head and display device, described camera head comprises camera, and described display device comprises liquid crystal display (LCD) device.

Recently, carrying out three-dimensional (3D) camera or laser radar (LADAR) Study on Technology to the range information that is used to obtain object.About this, flight time by utilizing light of 3D camera and LADAR technology, (time-of-flight TOF) measured distance between camera head and the target.

Shading light pulse in the various TOF methods (shuttered light pulse, SLP) method comprises: to the light of target emission specific wavelength; Block (shuttering) optical imagery from this wavelength of target reflection; Obtain image by image device; Carry out a series of these processes; And obtain range information thus.In order to distinguish with the corresponding light traveling time of distance a plurality of, the SLP method need comprise the no-delay gate operation, and this no-delay gate operation has the opening and closing switching time less than number nanosecond (ns).For this reason, image intensifier or semiconductor-based optical shutter have been proposed as high speed optical image shutter.

Yet image intensifier is expensive equipment, needs high voltage and Vacuum Package.In addition, although semiconductor-based optical shutter can overcome the operation and the structural shortcoming of image intensifier, but compare with light emitting diode (LED) device with the photodiode that uses in the correlation technique, semiconductor-based optical shutter is manufactured in the GaAs substrate by semiconductor fabrication process and has complicated structure, therefore consider price and manufacture difficulty, semiconductor-based optical shutter can be difficult to commercialization.

Simultaneously, use the optical modulation device of electrooptical effect (electro-optical effect) to comprise Kerr cell (Kerr cell) and Pockers cell (Pockel cell) according to correlation technique.Use the optical modulation device of electrooptical material to have the response speed of several GHz, therefore in the high speed optical communication, be used in the waveguide.

In the optical modulation device, by lithium niobate (LiNbO ₃) wait the polarization characteristic of the nonlinear crystal of formation to change according to given electric field.That is to say that by utilizing external electric field control polarization angle, the optical modulation device has shutter function with transmission or stop polarized incident light.

Summary of the invention

The invention provides the method and apparatus that is used for optical shutter, this optical shutter can carry out the high-speed shutter operation.

The invention provides the method for this optical shutter of operation.

The invention provides the method and apparatus of the optical devices that are used to comprise this optical shutter.

Others part are in the following description set forth, and will partly become from this description obviously, perhaps can comprehend by the one exemplary embodiment that practice provides.

According to an aspect of one exemplary embodiment, optical shutter comprises electro-optical medium, and this electro-optical medium is transparent, is in reactive solid, and has total internal reflection surface, is changed by external action at this total internal reflection surface place alinternal reflection angle.

Optical shutter can also comprise light path altering unit, is used to make the light vertical incidence of passing electro-optical medium at the incident target object.

Optical shutter can also comprise that being arranged in electro-optical medium travel path of incident light before changes the unit.

In electro-optical medium and the light path altering unit each can comprise prism or prism array.

The prism of electro-optical medium and the prism of light path altering unit can be of similar shape, and can be mutually symmetrical with arranging.

The prism array of electro-optical medium and the prism array of light path altering unit can comprise a plurality of microprisms respectively, the prism array that can arrange the prism array of electro-optical medium and light path altering unit make in a plurality of microprisms of electro-optical medium each xsect can with each the xsect symmetry in a plurality of microprisms of light path altering unit.

Gap with uniform thickness can be present between electro-optical medium and the light path altering unit on the travel path of light.Here, this gap can be filled less than the optical medium of air, prism or prism array with refractive index.

Light absorping film can be attached on the surface of the prism of electro-optical medium or on a surface of the prism array of electro-optical medium, total reflection light incident surface thereon can be represented in this surface.

It can be lens unit that travel path of incident light changes the unit, and the travel path that this lens unit is used for changing the incident light that enters into travel path of incident light change unit makes this incident light be incident on electro-optical medium as directional light.

Electro-optical medium can be prism or prism array, and incident light is by external action and by this prism or prism array total reflection or transmission.

The light incident surface of prism or the light incident surface that is included in the microprism in the prism array can tilt with respect to incident light.

Prism array can comprise the microprism of a plurality of bar shapeds or the microprism of a plurality of annulars.

This external action can be represented by applying the electric field that voltage forms.

Light absorping film can attached to the prism of light path altering unit or prism array not on the surface on the travel path of light.

Electro-optical medium can tilt with respect to the incident target object, and the light of launching from this electro-optical medium incides on this incident target object.

According to one exemplary embodiment on the other hand, a kind of method of operating optical shutter comprises following operation: apply voltage to electro-optical medium, change the alinternal reflection angle of this electro-optical medium thus.

This method can also comprise following operation: apply voltage continuously to this electro-optical medium, continuously change the alinternal reflection angle of this electro-optical medium thus.

The waveform of voltage can be square wave or sine wave, and is not limited to square wave or sine wave.

Electro-optical medium can be prism or prism array.

The incident angle that is incident on the light on the electro-optical medium can be decided the angle less than the total internal reflection of electro-optical medium, and can be greater than by applying the minimum alinternal reflection angle that voltage forms.

The incident angle that is incident on the light on the electro-optical medium can be decided the angle greater than the total internal reflection of electro-optical medium, and can be less than by applying the maximum alinternal reflection angle that voltage forms.

The alinternal reflection angle of electro-optical medium can reduce by applying voltage.

The alinternal reflection angle of electro-optical medium can increase by applying voltage.

According to one exemplary embodiment on the other hand, optical devices comprise optical shutter.These optical devices can be the range-finder cameras that comprises three-dimensional (3D) camera, perhaps can be LCD (LCD).

In another one exemplary embodiment, a kind of optical devices comprise: refracting element, has at least two refractive indexes, this refracting element has in described at least two refractive indexes one in first input when being received, have in described at least two refractive indexes another when being received in second input; And imageing sensor, can operate receiving the light that is refracted element refraction and transmission, wherein refracting element reflects light to imageing sensor when first input is received, and refracting element reflects light away from imageing sensor when second input is received.

In such optical devices, refracting element comprises optical input surface and light output surface, and one of the optical input surface of refracting element and light output surface tilt and out of plumb with respect to being refracted the light that element receives.

Description of drawings

These and/or others will be understood from below in conjunction with accompanying drawing the description of one exemplary embodiment being become obviously and is easier to, in the accompanying drawing:

Fig. 1 is the sectional view that illustrates according to the structure of the optical shutter of one exemplary embodiment;

Fig. 2 is the figure of the structure of optical shutter when alinternal reflection angle control medium as Fig. 1 is shown corresponding to total internal reflection prism;

Fig. 3 illustrates the total internal reflection prism of alternate figures 2 and the figure of structure that adopts the optical shutter of dissimilar prisms;

Fig. 4 is the figure according to the optical shutter of Fig. 2 of another one exemplary embodiment, and this optical shutter comprises light path altering unit;

Fig. 5 is the figure according to the optical shutter of Fig. 3 of another one exemplary embodiment, and this optical shutter comprises light path altering unit;

Fig. 6 is the figure according to the optical shutter of another one exemplary embodiment, and this optical shutter comprises that the path that is used to change incident light makes this incident light become the unit of directional light, and wherein incident light is incident on the light incident surface of alinternal reflection angle control medium;

Fig. 7 is the figure according to the optical shutter of Fig. 4 of another one exemplary embodiment, and this optical shutter comprises that travel path of incident light changes the unit;

Fig. 8 is the figure according to the optical shutter of Fig. 3 of another one exemplary embodiment, and this optical shutter comprises that also travel path of incident light changes the unit;

Fig. 9 is the figure according to the optical shutter of Fig. 5 of another one exemplary embodiment, and this optical shutter comprises that also travel path of incident light changes the unit;

Figure 10 A is the figure according to the optical shutter of another one exemplary embodiment, and this optical shutter comprises the array of a plurality of alinternal reflection angle control mediums, and the total internal reflection prism of Fig. 2 is as the unit in this array;

Figure 10 B is the planimetric map of first prism array of Figure 10 A;

Figure 11 is first prism array of second prism array optical shutter that is arranged in Figure 10 A and the sectional view of the situation between the imageing sensor;

Figure 12 is the sectional view of the optical shutter of Figure 10 A, also travel path of incident light is changed arrangements of cells on the light incident surface of first substrate;

Figure 13 is the sectional view of the optical shutter of Figure 11, also travel path of incident light is changed arrangements of cells on the light incident surface of first substrate;

Figure 14 A, Figure 14 B and Figure 14 C are the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment;

Figure 15 is the sectional view of the optical shutter of Figure 14, also travel path of incident light is changed arrangements of cells before the prism array;

Figure 16 is the sectional view of the optical shutter of Figure 14, also the 4th prism array is arranged between prism array and the imageing sensor;

Figure 17 is the sectional view of the optical shutter of Figure 16, also travel path of incident light is changed arrangements of cells before the prism array;

Figure 18 A and Figure 18 B are the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment;

Figure 19 is the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment;

Figure 20 is the sectional view of the optical shutter of Figure 18, also travel path of incident light is changed arrangements of cells before the prism array;

Figure 21 is the sectional view of the optical shutter of Figure 19, also travel path of incident light is changed arrangements of cells before the prism array;

Figure 22 A and Figure 22 B are the figure according to the optical shutter of another one exemplary embodiment;

Figure 23 is the sectional view of the optical shutter of Figure 22, also travel path of incident light is changed arrangements of cells before the 6th prism array;

Figure 24 A and Figure 24 B are the figure according to the optical shutter that comprises the prism array that is formed by a plurality of microprisms of another one exemplary embodiment;

Figure 25 is the sectional view of the optical shutter of Figure 24, also travel path of incident light is changed arrangements of cells before the 8th prism array;

Figure 26 is the figure according to the realistic model of another one exemplary embodiment;

Figure 27 is the equivalent circuit diagram about the realistic model of Figure 26;

Figure 28 be illustrate that voltage about the realistic model of Figure 26 applies and transmissivity between the curve map of relation;

Figure 29 is the curve map that be shown time response, the rise time that applies about voltage when promptly voltage is applied to realistic model;

Figure 30 to Figure 35 is the curve map that illustrates according to the shutter speed of the voltage type that is applied to realistic model; And

Figure 36 is the figure that comprises the optical devices of optical shutter according to one exemplary embodiment.

Embodiment

To consult and use the optical shutter of alinternal reflection angle control medium, the one exemplary embodiment of operating the method for this optical shutter and comprising the device of this optical shutter now in detail, its example is shown in the drawings.In the accompanying drawings, for clear, the thickness in layer and zone is by exaggerative.

Fig. 1 is the sectional view that illustrates according to the structure of the optical shutter of one exemplary embodiment.

With reference to Fig. 1, can comprise the reactive solid medium 30 that is used to control alinternal reflection angle according to the optical shutter of this one exemplary embodiment.The reactive solid medium 30 (being called alinternal reflection angle control medium 30 hereinafter) that is used to control alinternal reflection angle can have total internal reflection surface, is changed by external action (input just) at this surface alinternal reflection angle.Alinternal reflection angle control medium 30 can be to comprise lithium niobate (LiNbO ₃), KTN (KTa _xLn _1-xO ₃) material that waits, it has electrooptical effect.The shape of the alinternal reflection angle control medium 30 among Fig. 1 can be symbolistic shape.External action can influence the crystal property of alinternal reflection angle control medium 30.The example of crystal property can be the refractive index characteristic of alinternal reflection angle control medium 30.Because external action, the alinternal reflection angle of alinternal reflection angle control medium 30 can become and decide angle (fixed angle) less than the total internal reflection of alinternal reflection angle control medium 30.

Unique angle (unique angle) in the total internal reflection at the total internal reflection surface S1 place of alinternal reflection angle control medium 30 is represented when not applying external action at the angle of deciding of total internal reflection.Therefore, the unique angle of the total internal reflection of alinternal reflection angle control medium 30 can change according to the material that forms alinternal reflection angle control medium 30.

External action can be an electric field.Electric field is formed between two electrodes that have electric potential difference therebetween.Therefore, by alinternal reflection angle control medium 30 being arranged between two electrodes with electric potential difference, electric field can be applied to alinternal reflection angle control medium 30.Two electrodes can be arranged in the light incident surface and the light exit surface of alinternal reflection angle control medium 30.Can also use other things except electric field, as long as it can change the crystal property of alinternal reflection angle control medium 30.External action can be regulated according to the time.Like this, external action can continuously change, and correspondingly, the alinternal reflection angle of alinternal reflection angle control medium 30 also can continuously change.

The light of launching from the optical shutter that comprises alinternal reflection angle control medium 30 can be incident on the imageing sensor 35.Imageing sensor 35 can be charge-coupled device (CCD), complementary metal oxide semiconductor (CMOS) (CMOS) sensor, maybe the optical imagery that receives from alinternal reflection angle control medium 30 can be converted to any optical sensor of electric signal, and imageing sensor 35 can be exported electric signal.

In Fig. 1, L represents to enter the incident light of alinternal reflection angle control medium 30.The incident angle that is incident on the incident light L on the total internal reflection surface S1 can be fixed to given angle (given angle).Here, when the alinternal reflection angle of alinternal reflection angle control medium 30 according to the size of external action (promptly, the amount) and become less than total internal reflection decide the angle time, the incident angle of incident light L can be decided the angle less than the total internal reflection of alinternal reflection angle control medium 30, but can be greater than being formed on minimum alinternal reflection angle in the alinternal reflection angle control medium 30 by external action.

On the other hand, when the alinternal reflection angle of alinternal reflection angle control medium 30 according to the size of external action become greater than total internal reflection decide the angle time, the incident angle of incident light L can be greater than the angle of deciding of the total internal reflection of alinternal reflection angle control medium 30, but can be less than being formed on maximum alinternal reflection angle in the alinternal reflection angle control medium 30 by external action.

In Fig. 1, Lt represent when alinternal reflection angle control medium 30 is in the shutter opening state (, when external action takes place or do not take place) at the total internal reflection surface S1 place of alinternal reflection angle control medium 30 not by total reflection but the light that is partly reflected.Refract light Lt is incident on the imageing sensor 35.Therefore, refract light Lt has by the information of actual measurement or acquisition.In Fig. 1, Lr represent when alinternal reflection angle control medium 30 is in the shutter close state (just, when alinternal reflection angle control medium 30 become when deciding the angle by external action) less than total internal reflection at the alinternal reflection angle at total internal reflection surface S1 place at the total internal reflection surface S1 place of alinternal reflection angle control medium 30 by the light of total reflection.

Fig. 2 is the figure of the structure of optical shutter when alinternal reflection angle control medium 30 as Fig. 1 is shown corresponding to total internal reflection prism 40.

With reference to Fig. 2, total internal reflection prism 40 can be the prism at band right angle.The inclined surface 40S2 of total internal reflection prism 40 represents total internal reflection surface.Incident light 40L is perpendicular to the light incident surface 40S1 of total internal reflection prism 40.Imageing sensor 42 can be arranged as in the face of the inclined surface 40S2 as total internal reflection surface.Imageing sensor 42 can be arranged in incident light 40L and be refracted the back accessible position at inclined surface 40S2 place.For example, but imageing sensor 42 can be arranged in refract light 40T vertical incidence position thereon.Imageing sensor 42 can be arranged in refract light 40T can be with an incident angle incident position thereon, and here, refractive light paths changes the unit and can be arranged between total internal reflection prism 40 and the imageing sensor 42.Refractive light paths changes the unit and will be described later.

Check the travel path of incident light 40L with reference to Fig. 2, the light incident surface 40S1 that incident light 40L passes total internal reflection prism 40 is incident on the inclined surface 40S2 then, has given angle (givenangle) 40A thus.Here, if angle (fixed angle) is decided in the total internal reflection that given angle 40A is equal to or greater than total internal reflection prism 40, then incident light 40L is totally reflected to total internal reflection prism 40 inside at inclined surface 40S2 place, so incident light 40L does not arrive imageing sensor 42.In Fig. 2,40R is illustrated in inclined surface 40S2 place by the light of total reflection.Light absorption units 44 can be arranged on the surface of total internal reflection prism 40, and wherein total reflection light 40R sends via this surface of total internal reflection prism 40.Light absorption units 44 can be a light absorping film.

If given angle 40A decides the angle less than the total internal reflection of total internal reflection prism 40, then incident light 40L does not satisfy total internal reflection condition, so be refracted at inclined surface 40S2 place.Refract light 40T arrives imageing sensor 42.

Simultaneously, as external action, be applied to total internal reflection prism 40 by applying the electric field 40E that voltage causes, the alinternal reflection angle of total internal reflection prism 40 can change in two ways.The alinternal reflection angle that first kind of situation is total internal reflection prism 40 increases along with the intensity of electric field 40E and becomes and decide the angle less than the total internal reflection of total internal reflection prism 40, and the alinternal reflection angle that second kind of situation is total internal reflection prism 40 becomes along with the intensity increase of electric field 40E and decides the angle greater than the total internal reflection of total internal reflection prism 40.

In first kind of situation, given angle 40A (being the incident angle of incident light 40L) decides the angle still greater than the minimum alinternal reflection angle that can form corresponding to applying of electric field 40E less than the total internal reflection of total internal reflection prism 40 in total internal reflection prism 40.

In second kind of situation, the incident angle 40A of incident light 40L decides the angle still less than the maximum alinternal reflection angle that can form corresponding to applying of electric field 40E greater than the total internal reflection of total internal reflection prism 40 in total internal reflection prism 40.Imageing sensor 42 comprises a plurality of pixel 42P, but can only comprise a pixel.Imageing sensor 42 can be the entire image sensor of optical shutter, perhaps can be a part that comprises the entire image sensor of at least one pixel.In other words, the total internal reflection prism 40 of Fig. 2 can be and the corresponding alinternal reflection angle control medium of the entire image sensor of optical shutter.In addition, total internal reflection prism 40 can be and the corresponding alinternal reflection angle control medium of the part of the entire image sensor that comprises at least one pixel.That is to say that as the alinternal reflection angle control medium, optical shutter can only comprise a total internal reflection prism 40, perhaps can comprise the prism array that is formed by a plurality of total internal reflection prisms 40.Under the situation of prism array, the total internal reflection prism 40 of Fig. 2 can be corresponding to the prism unit that forms prism array.

Fig. 3 illustrates the total internal reflection prism 40 of alternate figures 2 and the figure of structure that adopts the optical shutter of dissimilar prisms (being called second prism 46 hereinafter).

With reference to Fig. 3, second prism 46 has the light incident surface 46S1 with respect to incident light 46L inclination.In addition, second prism 46 has the total internal reflection surface 46S2 parallel with imageing sensor 42.Light incident surface 46S1 and total internal reflection surface 46S2 form the given angle less than about 90 degree.Light absorption units 44 is arranged in a surface of second prism 46, is sent via this surface of second prism 46 by the light 46R of total reflection at total internal reflection surface 46S2 place.Light absorption units 44 can be to be coated in the lip-deep light absorping film that sends total reflection light 46R.The position of the vertical or oblique incidence of the light 46T that imageing sensor 42 can be formed in the refraction of the total internal reflection surface 46S2 place of second prism 46 on to it.Imageing sensor 42 with refract light 46T oblique incidence under the situation that the mode on the imageing sensor 42 is provided with, the unit (not shown) that is used to change the optical path of refract light 46T can be arranged between the total internal reflection surface 46S2 of the imageing sensor 42 and second prism 46.The light 46T that is reflected by this unit impinges perpendicularly on the imageing sensor 42.This unit will be described later.The material of second prism 46 can be identical or different with the material of the total internal reflection prism 40 of Fig. 2.

Check the path of incident light 46L with reference to Fig. 3.At first, when not applying external action, check the path of incident light 46L.Incident light 46L enters light incident surface 46S1 with incident angle 46A.Incident angle 46A is less than about 90 degree.Incident light 46L at first is refracted given angle at light incident surface 46S1 place.At this moment, determine first refraction angle of incident light 46L according to Si Nieer (Snell) law.The incident light 46L that is reflected for the first time at light incident surface 46S1 place is reflected for the second time at total internal reflection surface 46S2 place, is absorbed by light absorption units 44 thereby be incident on the imageing sensor 42 or by total reflection.According to the incident angle 46A of incident light 46L, incident light 46L is reflected at total internal reflection surface 46S2 place or for the second time by total reflection.

Below, when external action takes place, for example when electric field 46E is applied to second prism 46, check the path of incident light 46L.According to the intensity of external action, the refraction rate of change of second prism 46.For example, are KTN (KTaLnO at second prism 46 ₃) under the situation of prism, the refractive index of second prism 46 can be regulated to about 2.4 scope about 2.3 by the intensity of regulating external action.

The alinternal reflection angle that to describe the total internal reflection surface 46S2 place of second prism 46 now increases along with the intensity of electric field 46E and situation about reducing.The incident angle 46A of incident light 46 can be fixed on a given angle.Be incident on the incident angle 46B that forms when total internal reflection surface 46S2 goes up and decide the angle when being incident on light (the light 46LR that just, on light incident surface 46S1, is reflected for the first time) on the total internal reflection surface 46S2 less than the total internal reflection at total internal reflection surface 46S2 place.Thereby incident light 46L is incident on the light incident surface 46S1 with incident angle 46A, and the first refract light 46LR can be incident on the total internal reflection surface 46S2 with incident angle 46B, and incident angle 46B decides the angle less than the total internal reflection of second prism 46.At this moment, when electric field 46E was applied to second prism 46, the alinternal reflection angle at the total internal reflection surface 46S2 place of second prism 46 was decided the angle less than the total internal reflection at total internal reflection surface 46S2 place.The voltage strength of the electric field 46E that applies can be at about 0V in the scope of about 150V.

If the alinternal reflection angle of second prism 46 is minimum alinternal reflection angles when the intensity of electric field 46E is maximum, then the first refract light 46LR can be greater than this minimum alinternal reflection angle with respect to the incident angle 46B of total internal reflection surface 46S2.That is to say that the incident angle 46B of the first refract light 46LR can have in the total internal reflection of second prism 46 and decides value between angle and this minimum alinternal reflection angle.Like this, when when the alinternal reflection angle at total internal reflection surface 46S2 place becomes incident angle 46B less than the first refract light 46LR according to the intensity of the electric field 46E that is applied, the first refract light 46LR is absorbed by light absorption units 44 by total reflection then at total internal reflection surface 46S2 place.

If the alinternal reflection angle of second prism 46 becomes greater than the incident angle 46B of the first refract light 46LR along with reducing of electric field 46E, then the first refract light 46LR no longer satisfy total internal reflection condition and therefore the first refract light 46LR pass total internal reflection surface 46S2 and towards imageing sensor 42 refractions.In this way, be applied to the intensity of the electric field 46E of second prism 46, thereby the total internal reflection of second prism 46 is decided the angle and can be conditioned and can regulate total internal reflection and the refraction that is incident on the first refract light 46LR on the total internal reflection surface 46S2 by adjusting.

Simultaneously, when the alinternal reflection angle at the total internal reflection surface 46S2 place of second prism 46 increased along with the intensity of electric field 46E, the first refract light 46LR decided the angle with respect to the incident angle 46B of total internal reflection surface 46S2 greater than the total internal reflection of second prism 46.

If the alinternal reflection angle of second prism 46 is maximum alinternal reflection angles when the intensity of electric field 46E is in maximal value in the above-mentioned voltage range, then the incident angle 46B of the first refract light 46LR is less than maximum alinternal reflection angle.That is to say that the incident angle 46B of the first refract light 46LR can have greater than the total internal reflection of second prism 46 and decides the angle and less than the value of maximum alinternal reflection angle.Therefore, under the situation that the alinternal reflection angle of second prism 46 increases along with the intensity of electric field 46E, the first refract light 46LR satisfies initial total internal reflection condition, but no longer satisfy total internal reflection condition along with applying of electric field 46E, so pass total internal reflection surface 46S2, thereby optical shutter begins with the shutter close state at first, then along with the increase of the intensity of electric field 46E and change into the shutter opening state.

When the alinternal reflection angle of second prism 46 reduced along with the intensity of electric field 46E, situation was opposite.That is to say that optical shutter begins with the shutter opening state at first, then along with the increase of the intensity of electric field 46E and change into the shutter close state.

Then, the optical shutter that description is comprised alinternal reflection angle control medium 30 and light path altering unit.About above-described unit, use identical Reference numeral.

Fig. 4 is that it comprises light path altering unit according to the figure of the optical shutter of Fig. 2 of another one exemplary embodiment.

With reference to Fig. 4, light path altering unit i.e. prism 48 is arranged between total internal reflection prism 40 and the imageing sensor 42.Total internal reflection prism 40 and prism 48 can be collectively referred to as the reactive solid electro-optical medium, i.e. optical shutter, and it has total internal reflection surface, changes by external action at this surface alinternal reflection angle.Here, total internal reflection prism 40 can be called as first medium, change by external action at this first medium place alinternal reflection angle, prism 48 can be called second medium, this second medium is used to make light always perpendicular to imageing sensor 42, and wherein light enters imageing sensor 42 from first medium.These terms can be applied to comprise the optical shutter of all types of two prisms or two prism arrays, described two prisms or two prism arrays comprise and are used to make prism or the prism array of light vertical incidence on imageing sensor 44 that this will be described later.

Prism 48 can be the prism at band right angle.Prism 48 can be basic identical with total internal reflection prism 40.Although total internal reflection prism 40 is different with the material of prism 48, the refractive index of total internal reflection prism 40 and prism 48 is greater than the refractive index of air.The inclined surface of total internal reflection prism 40 and prism 48 faces with each other.Do not contact with each other but the inclined surface of total internal reflection prism 40 and prism 48 is located adjacent one another.So gap 50 is formed uniformly between the inclined surface of total internal reflection prism 40 and prism 48.

The thickness in gap 50 can be from about 1 μ m to about 2 μ m, but can be less than this.Although in gap 50 air is arranged, other material may reside in the gap 50.Here, to be present in material in the gap 50 be transparent and have the little refractive index of refractive index than total internal reflection prism 40 and prism 48.As long as material satisfies these conditions, the type of material that then is present in the gap 50 can be unrestricted.Because the thickness in gap 50 is even, so the travel path of light that gap 50 as optical medium, is used for passing the total internal reflection surface 40S2 of total internal reflection prism 40 moves to set a distance abreast along the direction vertical with the travel path of light.Here, parallel mobile distance is proportional with the thickness in gap 50.The inclined surface of prism 48 is the light incident light incident surfaces thereon that pass gap 50, and faces the inclined surface of total internal reflection prism 40, i.e. total internal reflection surface 40S2.

The light exit surface 48T of prism 48 is parallel to the light incident surface 40S1 and the imageing sensor 42 of total internal reflection prism 40.Therefore, pass gap 50 and be incident on the prism 48 light with from total internal reflection surface 40S2 along in the other direction entering total internal reflection prism 40 and passing identical path, the path of light of total internal reflection prism 40 and pass prism 48.Therefore, when the light on the light incident surface 40S1 of vertical incidence at total internal reflection prism 40 passed the light exit surface 48T of prism 48, light was launched perpendicular to light exit surface 48T.That is to say, be 0 degree at the refraction angle of the emergent light at light exit surface 48T place.Because imageing sensor 42 is parallel to the light exit surface 48T of prism 48, so the light vertical incidence of light exit surface 48T of passing prism 48 is on imageing sensor 42.

In this way, by arranging prism 48, the path of the light that reflects on the total internal reflection surface 40S2 of total internal reflection prism 40 can be changed, make light can vertical incidence on imageing sensor 42.By arranging prism 48, imageing sensor 42 can be arranged on total internal reflection prism 40 under, thereby can reduce the lateral dimension of optical shutter.Under the situation of Fig. 2 and Fig. 3, imageing sensor 42 can be arranged so that

refract light

40T and 46T can be perpendicular to imageing sensors 42.The optical medium that is present between prism 48 and the imageing sensor 42 can be basic identical with the optical medium that is present in the gap 50.

Fig. 5 is that it comprises light path altering unit according to the figure of the optical shutter of Fig. 3 of another one exemplary embodiment.

With reference to Fig. 5, light path altering unit i.e. the 4th prism 52 is arranged between second prism 46 and the imageing sensor 42.The 4th prism 52 is used to change from the path of the light of the total internal reflection surface 46S2 emission of second prism 46, makes the light vertical incidence thus on imageing sensor 42.Will be incident on incident light 46L on the light incident surface 46S1 of second prism 46 on direction perpendicular to imageing sensor 42.

The 4th prism 52 can be equal to second prism 46 about shape and function.The material of the 4th prism 52 can be identical or different with the material of second prism 46.Although the material difference, the refractive index of second prism 46 and the 4th prism 52 can be higher than air, and can be greater than the refractive index of the optical medium in the gap 54 that is filled between second prism 46 and the 4th prism 52.

About the setting of the 4th prism 52, the light incident surface 52S1 of the 4th prism 52 is corresponding to the total internal reflection surface 46S2 of second prism 46, light incident surface 52S1 and total internal reflection surface 46S2 each other very near but do not contact with each other.Like this, gap 54 is formed between the total internal reflection surface 46S2 of the light incident surface 52S1 of the 4th prism 52 and second prism 46.Light incident surface 52S1 and total internal reflection surface 46S2 face with each other, so gap 54 has homogeneous thickness.Like this, the function basic identical functions performed with the gap 50 of Fig. 4 can be carried out in gap 54.

The light exit surface 52S2 of the 4th prism 52 is corresponding to the light incident surface 46S1 of second prism 46.According to this set of the 4th prism 52, pass gap 54 and be incident on the 4th prism 52 light along with the total internal reflection surface 46S2 that is incident on second prism 46 on then along the identical path, path of the light of advancing in the other direction.Therefore, advance abreast with the incident light 46L that is incident on the light incident surface 46S1 of second prism 46 at the light that reflects on the light exit surface 52S2 of the 4th prism 52.Be incident on incident light 46L on the light incident surface 46S1 of second prism 46 perpendicular to imageing sensor 42.Therefore, from the light 52T vertical incidence of the light exit surface 52S2 of the 4th prism 52 emission on imageing sensor 42.

In Fig. 5, second prism 46 and the 4th prism 52 can be corresponding to entire image sensors 42, but can also be corresponding to some pixels of imageing sensor 42.For example, second prism 46 and the 4th prism 52 can be corresponding at least one pixel or two or more pixels that are included in the imageing sensor 42.Optical shutter can comprise the prism array with a plurality of second prisms 46 shown in Figure 3, perhaps can comprise the prism array with a plurality of structures, its each comprise second prism 46 shown in Figure 5 and the 4th prism 52.

Fig. 6 is the figure according to the optical shutter of another one exemplary embodiment, thereby this optical shutter comprises that being used to change travel path of incident light makes incident light become the unit of directional light, and wherein incident light is incident on the light incident surface of alinternal reflection angle control medium.The unit (be called travel path of incident light hereinafter and change the unit) that is used to change the path of incident light can be a lens unit.In other one exemplary embodiment, the unit that is used to change travel path of incident light cited above and below can change the shape of incident light.In other one exemplary embodiment, the unit (for example travel path of incident light change unit) that is used to change travel path of incident light cited above and below can be unit or the incident light alteration of form unit that is used to change the shape of incident light.

With reference to Fig. 6, collimating apparatus (collimating means) 58 is arranged on the light incident surface 40S1 of total internal reflection prism 40.The sphere glistening light of waves 40DL that collimating apparatus 58 will be incident on the total internal reflection prism 40 changes into plane glistening light of waves 40L, and plane glistening light of waves 40L vertical incidence is on the light incident surface 40S1 of total internal reflection prism 40.Collimating apparatus 58 can be lens.The light exit surface 58S2 of collimating apparatus 58 can be parallel to the light incident surface 40S1 of total internal reflection prism 40, and the light incident surface 40S1 of contact total internal reflection prism 40.The light incident surface 58S1 of collimating apparatus 58 is convex surfaces.

Fig. 7 is the figure of the optical shutter of Fig. 4, and it comprises that travel path of incident light changes the unit.

With reference to Fig. 7, collimating apparatus 58 is arranged on the light incident surface 40S1 of total internal reflection prism 40.Collimating apparatus 58 can be basic identical with the collimating apparatus that reference Fig. 6 describes.

Fig. 8 is the figure of the optical shutter of Fig. 3, and it also comprises the collimating apparatus 58 that changes the unit as travel path of incident light.Because the arrangement of collimating apparatus 58, although sphere glistening light of waves 40DL is incident on the optical shutter, the light 46L that will be incident on second prism 46 is a directional light.

Fig. 9 is the figure of the optical shutter of Fig. 5, and it also comprises the collimating apparatus 58 that changes the unit as travel path of incident light.The collimating apparatus 58 of Fig. 9 can be carried out the basic identical functions of carrying out with the collimating apparatus 58 of Fig. 8 of function.

The optical shutter that below description is comprised the array that forms by a plurality of alinternal reflection angle control mediums 30.A plurality of alinternal reflection angle control mediums 30 that formation is included in the array in the optical shutter can be equal to or similar to shown in Figure 5 those with Fig. 1.

Figure 10 A and Figure 10 B are the figure of optical shutter that comprises the array of alinternal reflection angle control medium, and the total internal reflection prism 40 of Fig. 2 is as the unit in this array.About previously described unit, use similar Reference numeral.

With reference to Figure 10 A, optical shutter comprises first substrate 62 and first prism array 60.On the light exit surface of first prism array 60 attached to first substrate 62.First substrate 62 can be the electric light substrate, and its refractive index changes according to external action, and it is transparent to incident light.First substrate 62 can be by forming with the essentially identical material of microprism 60A that forms first prism array 60.In addition, first substrate 62 can be formed by the refractive index materials of refractive index near microprism 60A.First substrate 62 can be formed by glass or sapphire.The incident light that enters first substrate 62 can be a directional light.Microprism 60A can be equal to the total internal reflection prism 40 of Fig. 2 about shape, material and function.On the surface of sending total internal reflection light of light absorption units 44 attached to microprism 60A.First prism array 60 is formed by a plurality of microprism 60A.

First prism array 60 can form by this way, the electric light substrate that is about to be used as microprism 60A on another surface of first substrate 62 (promptly, light exit surface) go up deposition or growth to have the thickness of the thickness t 1 that is equal to or greater than first prism array 60, the electric light substrate is cut or etching then.Here, the thickness of the electric light substrate of deposition or growth can be regulated by cutting operation, and the electric light substrate that is cut then can have and first prism array, 60 essentially identical shapes by etching operation.For choosing ground, first prism array 60 can form by this way, and promptly first substrate 62 and electric light substrate form separately, and the electric light substrate joins first substrate 62 to then, and the electric light substrate of joint is cut and etching as described above.Simultaneously, the electric light substrate can come composition by cutting and etching operation, thereby have and first prism array, 60 essentially identical shapes, then by using orientated deposition, light absorption units 44 can be formed on each microprism 60A from the light of total internal reflection surface 60S2 total reflection by on its surface of sending.

Figure 10 B is the planimetric map of first prism array 60.

With reference to Figure 10 B, a plurality of microprism 60a are arranged to bar shaped.

In Figure 10 A, be incident on obliquely on the imageing sensor 42 at the light 40T that reflects on the total internal reflection surface 60S2 of first prism array 60, promptly refract light 40T is incident on the imageing sensor 42 with the incident angle greater than about 0 degree.Yet, refract light 40T can vertical incidence on imageing sensor 42.In order to make refract light 40T vertical incidence on imageing sensor 42, imageing sensor 42 can be set to tilt with respect to first substrate 62, and is shown in dotted line.

For choosing ground, as shown in figure 11, second prism array 64 can be arranged between the imageing sensor 42 and first prism array 60.Thereby second prism array 64 is to be used to change make the unit of light 40T vertical incidence on imageing sensor 42 in the path of the light 40T that reflects on the total internal reflection surface 60S2 of first prism array 60.In other words, thus the identical unit of travel path of the light that second prism array 64 is travel paths of being used to change refract light 40T on making this travel path and being incident on first substrate 62.First prism array 60 and second prism array 64 can be provided with adjacent one another arely, thereby by with the total internal reflection prism 40 of Fig. 4 and the layout similar arrangements of prism 48 microprism 60A and 64A being set, microprism 60A and 64A form the gap (with reference to the Reference numeral 72 of Figure 13) corresponding with gap 50.Yet in Figure 11, in order to be clearly shown that first prism array 60 and second prism array 64, for convenience's sake, the vertical range between first prism array 60 and second prism array 64 is by exaggerative.Second substrate 66 is arranged between second prism array 64 and the imageing sensor 42.Second prism array 64 is arranged on the light incident surface of second substrate 66.Second prism array 64 comprises a plurality of microprism 64A.Microprism 64A can be equal to about the prism 48 of shape, material and function aspects and Fig. 4.The material of second substrate 66 can be identical with the material of the microprism 64A of second prism array 64.In addition, the material of second substrate 66 can have the refractive index approaching with the refractive index of microprism 64A.In addition, the material of second substrate 66 can be basic identical with the material of first substrate 62.Between the microprism 60A of the microprism 64A of second prism array 64 and first prism array 60 be provided with can and Fig. 4 between total internal reflection prism 40 and the prism 48 be provided with basic identical.

Simultaneously, in the optical shutter of Figure 10 A, when the incident light that enters first substrate 62 was spherical wave, promptly when incident light was not directional light, as shown in figure 12, travel path of incident light changed unit 68 and can further be arranged on the light incident surface of first substrate 62.Travel path of incident light changes unit 68 can change the path that will incide the light 68L on the travel path of incident light change unit 68, thereby directional light is incident on the light incident surface of first substrate 62.In other words, thus travel path of incident light changes unit 68 to be changed and will incide the path that travel path of incident light changes the light 68L on the unit 68 and make the travel path of light 68L on identical direction.Correspondingly, the light that is incident on first prism array 60 becomes directional light, thereby the light vertical incidence is on the light incident surface of each microprism 60a.It can be Fresnel (Fresnel) lens that travel path of incident light changes unit 68.

Next, in the optical shutter of Figure 11, when the incident light that enters first substrate 62 was spherical wave, as shown in figure 13, travel path of incident light changed unit 70 and can further be arranged on the light incident surface of first substrate 62.Travel path of incident light changes unit 70 can be basic identical with the travel path of incident light change unit 68 of Figure 12.

Figure 14 A, 14B and 14C are the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment.

With reference to Figure 14 A, optical shutter comprises prism array 74 and imageing sensor 42.Prism array 74 can comprise the 3rd substrate 74A and a plurality of microprism 74B.Therefore each microprism 74B can, can replace each microprism 74B to arrange the alinternal reflection angle control medium of another type corresponding to the example of alinternal reflection angle control medium.The 3rd substrate 74A can be oblique with given angle lapping with respect to imageing sensor 42.Therefore, the light incident surface 74AS of the 3rd substrate 74A tilts with same angular with respect to imageing sensor 42.A plurality of microprisms are arranged on the light incident surface 74AS of the 3rd substrate 74A.A plurality of microprism 74B arrange with step-wise manner, and on the light incident surface 74AS attached to the 3rd substrate 74A.

For convenience, in Figure 14 B, the 3rd substrate 74A and a plurality of microprism 74B are separately.Each microprism 74B is the prism at band right angle, can be basic identical with the microprism 60A of Figure 10 A.The inclined surface of a plurality of microprism 74B, the total internal reflection surface 74S2 of promptly a plurality of microprism 74B contacts the light incident surface 74AS of the 3rd substrate 74A.Here, the light incident surface 74S1 that is used to receive incident light 40L of a plurality of microprism 74B can be parallel to imageing sensor 42.Like this, the interior angle 76 between imageing sensor 42 and the 3rd substrate 74A equals the interior angle between the light incident surface 74S1 and total internal reflection surface 74S2 among each microprism 74B.

Yet, imageing sensor 42 be arranged so that can the situation of vertical incidence on imageing sensor 42 from the light 74T of prism array 74 in, the interior angle 76 between imageing sensor 42 and the 3rd substrate 74A can be different from the interior angle between the light incident surface 74S1 and total internal reflection surface 74S2 among each microprism 74B.The 3rd substrate 74A can be the substrate to the optical transparency that passes microprism 74B.The refractive index of the 3rd substrate 74A can be greater than the refractive index of air, and can be less than the minimum refractive index of the microprism 74B that causes by external action.

The incident light 40L that enters optical shutter can be according to the condition of external action and on the total internal reflection surface 74S2 of a plurality of microprism 74B by total reflection or refraction.So the total internal reflection surface 74S2 that the light incident surface 74AS of the 3rd substrate 74A is received in a plurality of microprism 74B goes up the light of refraction.By external action electric field 40E and sending through the surface (being called right-angled surface hereinafter) vertical for example with each light incident surface 74S1 of each microprism 74B from the light 74R of the total internal reflection surface 74S2 total reflection of a plurality of microprism 74B.Yet right-angled surface is coated with light absorption units 44.Like this, total reflection light 74R is absorbed by light absorption units 44, thereby total reflection light 74R is not incident on the adjacent microprism 74B.

Shown in Figure 14 A and Figure 14 B, from the lowermost portion of the light incident surface 74AS of the highest part to the three substrate 74A of the light incident surface 74AS of the 3rd substrate 74A, microprism 74B arranges in the successive steps mode.Therefore, suppose that being parallel to light incident surface 74AS by external action from the light 74R of total internal reflection surface 74S2 total reflection advances, then total reflection light 74R can not influence adjacent microprism 74B, thereby light absorption units 44 can be not included in the optical shutter of Figure 14 A, 14B and 14C.

Figure 14 C is the planimetric map of prism array 74.In Figure 14 A, there is one-to-one relationship between the pixel of microprism 74B and imageing sensor 42.Yet each microprism 74B can be corresponding to two or more pixels of imageing sensor 42.This corresponding relation can be applied to the optical shutter of describing with reference to Figure 10 to Figure 13, can also be applied to the optical shutter of describing later.In this way, when a prism array during corresponding to a plurality of pixel, the process margin that forms prism array can increase, thereby the formation of prism array can more easily realize.

Simultaneously, when the incident light 40L in the optical shutter of Figure 14 A was non-directional light, promptly the wave surface of incident light 40L was not the plane, when for example being spherical wave, as shown in figure 15, the unit 80 that is used to change the path of incident light 40L can further be arranged in before the prism array 74.Unit 80 (be called hereinafter travel path of incident light change unit 80) can to change the unit basic identical with above-described travel path of incident light before.

For choosing ground, as shown in figure 16, the 4th prism array 84 can further be arranged between prism array 74 and the imageing sensor 42.The 4th prism array 84 can be a light path altering unit.The 4th prism array 84 make from prism array 74 to light (with reference to the light 74T of Figure 14 A) vertical incidence of imageing sensor 42 refractions on imageing sensor 42.The 4th prism array 84 comprises the 3rd substrate 74A and a plurality of microprism 84B.Prism array 74 and the 4th prism array 84 can be shared the 3rd substrate 74A.The 3rd substrate 74A can form by two substrates are engaged.Here, one of described two substrates can be included in the prism array 74, and another in described two substrates can be included in the 4th prism array 84.A plurality of microprism 84B of the 4th prism array 84 can be basic identical with a plurality of microprism 74B of prism array 74.

On the light exit surface 74AT of a plurality of microprism 84B attached to the 3rd substrate 74A of the 4th prism array 84.The inclined surface of a plurality of microprism 84B contacts the light exit surface 74AT of the 3rd substrate 74A.The light exit surface 84S1 of a plurality of microprism 84B is corresponding to the light incident surface 74S1 of a plurality of microprism 74B, and a plurality of microprism 84B are attached and make light incident surface 74S1 and light exit surface 84S1 parallel to each other.

The a plurality of microprism 84B of the 4th prism array 84 are respectively vertically corresponding to a plurality of microprism 74B of prism array 74.That is to say, have one-to-one relationship between microprism 84B and the microprism 74B.In Figure 16, pass a plurality of microprism 84B of a plurality of microprism 74B, the 3rd substrate 74A of prism array 74 and the 4th prism array 84 and thus the path of the incident light 40L of vertical incidence on imageing sensor 42 be not different from and pass total internal reflection prism 40, gap 50 and prism 48 and the path (with reference to Fig. 4) of the incident light 40L of vertical incidence on imageing sensor 42 thus.

When non-parallel light during as the incident light in the optical shutter of Figure 16, as shown in figure 17, travel path of incident light changes unit 90 and can be arranged in before the prism array 74, thereby non-parallel incident light 68L can become parallel incident light 40L.Travel path of incident light changes unit 90 can be basic identical with the travel path of incident light change unit 80 that reference Figure 15 describes.

Figure 18 A and Figure 18 B are the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment.About above-described unit, use identical Reference numeral.

With reference to Figure 18 A, optical shutter comprises the 4th prism array 94.The 4th prism array 94 can be another example of the alinternal reflection angle control medium 30 of Fig. 1.The 4th prism array 94 comprises the 4th substrate 94A and a plurality of microprism 94B.The 4th substrate 94A can be parallel to imageing sensor 42.Yet imageing sensor 42 can be arranged in such a way, make from the incident light 46T of the 4th prism array 94 can vertical incidence on imageing sensor 42, in this case, imageing sensor 42 can be not parallel to the 4th substrate 94A.A plurality of microprism 94B are arranged on the light incident surface of the 4th substrate 94A.The technology that is used for a plurality of microprism 94B of formation on the light incident surface of the 4th substrate 94A can be basic identical with the technology of first prism array 60 that is used to form Figure 10 A.Each microprism 94B can be basic identical with second prism 46 of Fig. 3, except the size aspect.Therefore, incident light 46L passes a plurality of microprism 94B and becomes refract light 46T thus or can be basic identical with the process that second prism 46 of reference Fig. 3 is described by the process of total reflection.

The 4th substrate 94A is for the transparent substrate of incident light 46L.The 4th substrate 94A is formed by the material that has with the essentially identical electro-optical characteristic of a plurality of microprism 94B, and the refractive index of material can be by external action (for example intensity by electric field 46E when electric field 46E is applied to optical shutter shown in Figure 18 A) and changed similarly with a plurality of microprism 94B.Figure 18 B is the planimetric map of the 4th prism array 94.

Figure 19 is the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment.

With reference to Figure 19, the optical shutter of Figure 19 further is arranged in the 4th prism array 94 of optical shutter of Figure 18 A and the situation between the imageing sensor 42 corresponding to pentaprism array 98.Pentaprism array 98 can be another example of light path altering unit.Therefore, substitute pentaprism array 98, can arrange other light path altering unit of carrying out basic identical function.Thereby pentaprism array 98 is used for changing the path of the light 46T shown in Figure 18 makes the light 46T shown in Figure 18 become light 98T perpendicular to imageing sensor 42, and wherein light 46T advances to imageing sensor 42 from the 4th prism array 94 in the shutter opening state.By arranging pentaprism array 98, imageing sensor 42 and the 4th prism array 94 can be arranged on the same vertical optical axis of optical shutter of Figure 19.Therefore, can reduce the lateral dimension of optical shutter, and since the light vertical incidence on imageing sensor 42, so can increase the light detection efficiency of imageing sensor 42.

Gap 100 is present between the 4th prism array 94 and the pentaprism array 98.Gap 100 can be equal to or less than about 10 μ m.The thickness in gap 100 is uniform.Gap 100 can be filled with the optical medium with given refractive index.The refractive index of filling the optical medium in gap 100 can be less than the refractive index of the 4th prism array 94 and pentaprism array 98.The optical medium of filling gap 100 can be the another kind of material of refractive index less than air or the 4th substrate 94A and the 5th substrate 98A.Therefore, the light that passes gap 100 moves horizontally pro rata with the thickness in gap 100 on the direction of the travel path of light.Therefore, the thickness in gap 100 can be considered the position of imageing sensor 42 and suitably determine.

Pentaprism array 98 comprises the 5th substrate 98A and a plurality of microprism 98B.The 5th substrate 98A can be and the essentially identical electrooptical material of the 4th substrate 94A.In addition, the 5th substrate 98A can have the essentially identical thickness with the 4th substrate 94A.The 5th substrate 98A is parallel to the 4th substrate 94A, and the 5th substrate 98A and the 4th substrate 94A face with each other.Gap 100 is present between the 5th substrate 98A and the 4th substrate 94A.The electro-optical characteristic of each microprism 98B can be basic identical with each microprism 94B of the 4th prism array 94, except their arranged direction.On the light exit surface 98AS2 of a plurality of microprism 98B in the pentaprism array 98 attached to the 5th substrate 98A.

Each microprism 98B is corresponding to each microprism 94B of the 4th prism array 94.Each microprism 98B rotates about 180 degree rotate about 180 degree then around X-axis situation corresponding to each the microprism 94B in the 4th prism array 94 around Y-axis.Light absorption units 44 is arranged on the light exit surface of emission total reflection light of each microprism 94B of the 4th prism array 94, and in this respect, light absorption units 98C is arranged on the surface of each microprism 98B of the 5th substrate 98A, wherein should the surface corresponding to the light exit surface of each microprism 94B.Here, light absorption units 98C is optionally, therefore can not comprised.In fact the travel path of incident light 46L is changed by microprism 94B and 98B, and second prism 46 of the shape of microprism 94B and 98B and electro-optical characteristic and Fig. 5 and the shape and the electro-optical characteristic of the 4th prism 52 are basic identical.Therefore, be incident on the optical shutter that is in the shutter opening state of Figure 19, pass the 4th prism array 94 and pentaprism array 98 be incident on then the incident light 46L on the imageing sensor 42 travel path can be incident on the travel path (with reference to Figure 15) of the light on the imageing sensor 42 then basic identical with passing second prism 46 and the 4th prism 52.

The incident light 46L that enters the optical shutter of Figure 18 is a directional light.Yet the non-parallel light for example sphere glistening light of waves can be incident on the optical shutter.In this case, shown in the optical shutter of Figure 20, travel path of incident light changes unit 110 and can be arranged in before the prism array 94.It can be Fresnel lens that travel path of incident light changes unit 110.Travel path of incident light changes unit 110 spherical wave incident light 68L is changed into directional light 46L.

Simultaneously, the light that is incident on the optical shutter of Figure 19 can be non-directional light.In this case, shown in the optical shutter of Figure 21, travel path of incident light changes unit 120 and can be arranged in before the prism array 94.The travel path of incident light of Figure 21 changes unit 120 can be basic identical with the travel path of incident light change unit 110 of Figure 20.

Travel path of incident light change unit 110 in the optical shutter of Figure 20 and Figure 21 can be arranged as with travel path of incident light change unit 120 and directly contact prism array 94.Yet the transparent plate with uniform thickness can further be arranged in prism array 94 and travel path of incident light and change between the unit 110 and 120.

Figure 22 A is the figure according to the optical shutter of another one exemplary embodiment.

With reference to Figure 22 A, optical shutter comprises the 6th prism array 130 and the 7th prism array 140.The 7th prism array 140 and the 6th prism array 130 are arranged sequentially in imageing sensor 42 tops.The 6th prism array 130 and the 7th prism array 140 and imageing sensor 42 are arranged on the same optic axis.Clearance G 2 is present between the 6th prism array 130 and the 7th prism array 140.In Figure 22 A, for the purpose of the convenience that illustrates and describe, clearance G 2 is by exaggerative.As shown in figure 23, in fact clearance G 2 is present between the inclined surface of the inclined surface of the first annular microprism 130B and the second annular microprism 140B.The spacing of clearance G 2 can be equal to or less than about 10 μ m.

According to external action, for example according to the intensity of applying electric field E1 or the voltage levvl that is applied, the 6th prism array 130 makes incident light L1 propagate (shutter opening state) or stop the propagation (shutter close state) of light L1 towards the 7th prism array 140.When optical shutter was in the shutter opening state, the 7th prism array 140 was used for changing the path from the light of the 6th prism array 130, thereby made the light vertical incidence on imageing sensor 42.The 6th prism array 130 comprises the 6th substrate 130A and a plurality of first annular microprism 130B.The 6th substrate 130A can be formed by electro-optical characteristic and the essentially identical material of a plurality of first annular microprism 130B, and for example refractive index is by the transparent material of electric field E1 change.The 6th substrate 130A can be basic identical with first substrate 62 of Figure 10 A.The a plurality of first annular microprism 130B differs from one another aspect size.

Figure 22 B is the backplan of the 6th prism array 130.

With reference to Figure 22 B, the array of a plurality of first annular microprism 130B is constructed by this way, the first annular microprism 130B that promptly has minimum diameter is present in the center of array, according to the order according to diameter dimension, the first annular microprism 130B is around the first annular microprism 130B with minimum diameter.Shown in Figure 22 A, the cut-open view of each first annular microprism 130B is the prism with the essentially identical band of the microprism 60A right angle of first prism array 60 of Figure 10 A.Therefore, passing the path (for total internal reflection or refraction on the total internal reflection surface) of incident light L1 of a plurality of first annular microprism 130B of the 6th prism array 130 can be basic identical with the path that reference Fig. 2 or 10A describe.On the surface of light absorption units 135 attached to each first annular microprism 130B, incident has from the light RL1 of the total internal reflection surface 130S1 total reflection of each first annular microprism 130B of the 6th prism array 130 on this surface.Light absorption units 135 can be basic identical with the light absorption units 44 that reference Fig. 2 describes.The 7th prism array 140 comprises the 7th substrate 140A and a plurality of second annular microprism 140B.

The 7th substrate 140A can be the substrate that has with the essentially identical electro-optical characteristic of the 6th substrate 130A.The 6th substrate 130A and the 7th substrate 140A can be parallel to each other and can be had homogeneous thickness.The second annular microprism 140B is as the counter pair (counterpart) of a plurality of first annular microprism 130B.The microprism 64A of second prism array 64 of the xsect of each second annular microprism 140B and Figure 11 is basic identical.Therefore, the arrangement relation between a plurality of first annular microprism 130B and a plurality of second annular microprism 140B can and Figure 11 in first prism array 60 and the arrangement relation between second prism array 64 basic identical.Therefore, passing a plurality of first annular microprism 130B and a plurality of second annular microprism 140B, to become the path of incident light of microprism 64A of the microprism 60A that passes first prism array 60 among the path of incident light L1 of the light TL1 of vertical incidence on imageing sensor 42 and Figure 11 and second prism array 64 then basic identical.

Simultaneously, under the situation of the only non-parallel light on the optical shutter that is incident in Figure 22 A, travel path of incident light changes unit 150 and can be arranged in before the 6th prism array 130, as shown in figure 23.Travel path of incident light changes unit 150 can be basic identical with previously described travel path of incident light change unit 80,90,110 and 120.Travel path of incident light changes the path that unit 150 is used for changing non-parallel incident light NL1 and then non-parallel incident light NL1 is emitted as directional light.

Figure 24 A is the figure that comprises the optical shutter of the prism array that is formed by a plurality of microprisms according to another one exemplary embodiment.

With reference to Figure 24 A, optical shutter comprises the 8th prism array 160 and the 9th prism array 170.Incident light L1 enters the 8th prism array 160.The 9th prism array 170 is arranged between the 8th prism array 160 and the imageing sensor 42.The 8th prism array 160 and the 9th prism array 170 and imageing sensor 42 can be arranged on the same optic axis.The 8th prism array 160 is used for stopping or allowing incident light L1 according to external action.The 9th prism array 170 is examples of light path altering unit, and the path that is used to change from the light of the 8th prism array 160 makes this light vertical incidence at imageing sensor 42 then.The 8th prism array 160 and the 9th prism array 170 and imageing sensor 42 are arranged in parallel.

The 8th prism array 160 and the 9th prism array 170 are separated from one another.Therefore, clearance G 3 is present between the 8th prism array 160 and the 9th prism array 170.Clearance G 3 is filled with optical material.Here, the refractive index of this optical material is less than the refractive index of the 8th prism array 160 and the 9th prism array 170.Optical material can be the material of air or other type.

The 8th prism array 160 comprises the 8th substrate 160A and a plurality of the 3rd annular microprism 160B.The 8th substrate 160A can be formed by the material that has with the essentially identical electro-optical characteristic of electro-optical characteristic of a plurality of the 3rd annular microprism 160B.The 8th substrate 160A can be basic identical with first substrate 62 of Figure 10 A.The 8th substrate 160A can be parallel with imageing sensor 42.On the light incident surface of a plurality of the 3rd annular microprism 160B attached to the 8th substrate 160A.The a plurality of the 3rd annular microprism 160B can be formed by electrooptical material, the refractive index of this electrooptical material be changed according to external action and therefore its alinternal reflection angle be changed.

Layout about a plurality of the 3rd annular microprism 160B, shown in Figure 24 B, the 3rd annular microprism 160B with minimum diameter is positioned at the center, and the 3rd annular microprism 160B centers on the 3rd annular microprism 160B with minimum diameter according to the order according to diameter dimension.Light absorption units 180 is arranged in the emission of the 3rd annular microprism 160B from the surface of the light RL2 of the 8th substrate 160A total reflection.Light absorption units 180 can be basic identical with previously described light absorption units 44.

The 9th prism array 170 comprises the 9th substrate 170A and a plurality of Fourth Ring shape microprism 170B.The 9th substrate 170A is in the face of the 8th substrate 160A, and clearance G 3 is formed between them.The 9th substrate 170A can be parallel with imageing sensor 42 with the 8th substrate 160A.The 9th substrate 170A can have the essentially identical electro-optical characteristic with the 8th substrate 160A.The 9th substrate 170A can have the essentially identical electro-optical characteristic with a plurality of Fourth Ring shape microprism 170B.In addition, the 9th substrate 170A can be such substrate, and but this substrate does not have electro-optical characteristic for transparent, and has the approaching refractive index of refractive index with a plurality of Fourth Ring shape microprism 170B.A plurality of Fourth Ring shape microprism 170B can be arranged as corresponding to a plurality of the 3rd annular microprism 160B, perhaps can arrange similarly with a plurality of the 3rd annular microprism 160B.On the light exit surface of a plurality of Fourth Ring shape microprism 170B attached to the 9th substrate 170A.

With reference to Figure 24 A, the xsect of the 3rd annular microprism 160B and Fourth Ring shape microprism 170B is equal to the microprism 94B of prism array 94 of Figure 19 and the microprism 98B of the 4th prism array 98 respectively.In addition, at the shutter opening state, the travel path that passes the incident light L1 of a plurality of the 3rd annular microprism 160B and a plurality of Fourth Ring shape microprism 170B can be basic identical with the travel path of the incident light 46L of the microprism 98B of the microprism 94B of prism array 94 in the optical shutter that passes Figure 19 and the 4th prism array 98.Therefore, at the shutter opening state, pass the 9th prism array 170 and towards light TL2 vertical incidence that imageing sensor 42 is advanced on imageing sensor 42.The xsect of each Fourth Ring shape microprism 170B can rotate about 180 degree rotate about 180 degree then around X-axis situation around Y-axis corresponding to each the 3rd annular microprism 160B.Light absorption units 190 can surface attached to each Fourth Ring shape microprism 170B on, wherein should the surface corresponding to the light exit surface of the emission total reflection light RL2 of each the 3rd annular microprism 160B.

At the shutter opening state, the light that is incident on a plurality of Fourth Ring shape microprism 170B is refracted on refractive surface 170S2, is incident on then on the imageing sensor 42.In this process, the reflected light (not shown) can be created on the refractive surface 170S2.Reflected light can disturb adjacent Fourth Ring shape microprism 170B.Light absorption units 190 absorbs from the reflected light of refractive surface 170S2 reflection.Therefore, by arranged light absorptive unit 190, can prevent that the light between a plurality of Fourth Ring shape microprism 170B from disturbing.Under the little situation of catoptrical amount, can not use light absorption units 190.

Simultaneously, be under the situation of non-directional light NL1 at the incident light L1 of the optical shutter that enters Figure 24, travel path of incident light changes unit 200 and can be arranged in before the 8th prism array 160, as shown in figure 25.It can be Fresnel lens that travel path of incident light changes unit 200.The travel path that is incident on the non-parallel smooth NL1 on the travel path of incident light change unit 200 is changed unit 200 by travel path of incident light and changes, and non-parallel then smooth NL1 is incident on the 8th prism array 160 as directional light L1.

Hereinafter, will describe the relevant realistic model of optical shutter that provides with above-mentioned one exemplary embodiment, and check the operating characteristic that obtains from realistic model.

Figure 26 is the figure according to the realistic model of another one exemplary embodiment.This realistic model can be used for camera optical system.

With reference to Figure 26, bottom electrode 212, time prism array 214, last prism array 216, top electrode 218 and travel path of incident light change unit 220 sequence stacks in realistic model.The element that piles up can contact with each other betwixt at the interface.Ccd image sensor 210 is arranged under the bottom electrode 212 of realistic model.As a result, the element that piles up in the realistic model is positioned at ccd image sensor 210 tops.Adjusting framework 222 is arranged on the side surface of the laminated components that comprises bottom electrode 212, time prism array 214, last prism array 216 and top electrode 218, and above ccd image sensor 210.Regulate framework 222 and regulate the distance that goes up between prism array 216 and the following prism array 214.Regulate framework 222 by using, the clearance G 4 between the inclined surface of facing of the microprism 216B of last prism array 216 and the microprism 214B of following prism array 214 can be adjusted to less than about 10 μ m.Last prism array 216 comprises a plurality of annular microprism 216B, and its xsect has the right angle.Light absorption units 224 is arranged on the vertical surface of each annular microprism 216B, promptly sends from the surface of the light of the inclined surface total reflection of each annular microprism 216B, and wherein this inclined surface is a total internal reflection surface.Following prism array 214 is corresponding to being used to change from the light path altering unit in the path of the light of last prism array 216 incidents, and makes the light vertical incidence on ccd image sensor 210.Following prism array 214 is counter pairs of going up prism array 216, comprises a plurality of annular microprism 214B.The a plurality of annular microprism 214B of following prism array 214 is counter pairs of going up a plurality of annular microprism 216B of prism array 216.A plurality of annular microprism 214B correspond respectively to a plurality of annular microprism 216B.It can be Fresnel lens that travel path of incident light changes unit 220.The material of going up prism array 216 and following prism array 214 in the realistic model can be KTN.Top electrode 218 and bottom electrode 212 are transparency electrodes, and about 0V can put between top electrode 218 and the bottom electrode 212 to the voltage of about 250V scope, and voltage can continuously change.The horizontal width of realistic model is about 1cm, and the overall height of last prism array 216 and following prism battle array 214 is about 10 μ m.The gross thickness of realistic model is about 1mm.

Figure 27 is the equivalent circuit diagram about the realistic model of Figure 26.In Figure 27, V _ShutterExpression is applied to the last prism array 216 of Figure 26 and the voltage of following prism array 214.C _ShutterThe electric capacity of prism array 216 and following prism array 214 in the expression.R _uThe expression pull-up resistor.In addition, V represents to be applied to the voltage of the optical devices of the optical shutter that comprises Figure 26.

Figure 28 illustrates about the voltage of the realistic model of Figure 26 and the curve map of the relation between the transmissivity.In Figure 28, transverse axis represents to be applied to by top electrode 218 and bottom electrode 212 in the realistic model voltage of prism array 216 and following prism array 214.In addition, Z-axis is represented the transmissivity of the last prism array that applies according to voltage 216 and following prism array 214.

It is about 26 degree that the angle is decided in the total internal reflection of each annular microprism 216B in the last prism array 216 that is formed by the KTN material.Last prism array 216 forms by this way, and the alinternal reflection angle of promptly going up prism array 216 reduces according to external action (being that voltage applies).The incident angle that is incident on the image light on the incidence surface (promptly going up the total internal reflection surface of each annular microprism 216B of prism array 216) is maintained consistently less than about 26 degree and greater than the minimum alinternal reflection angle that can apply acquisition according to voltage.For example, be under the situation of about 24 degree at minimum alinternal reflection angle, the incident angle of image light can maintain about 25 degree.

With reference to Figure 28, when voltage is applied for about 0 the time (when the intensity of applying electric field is about 0 the time), the transmissivity of realistic model is about 100%.Therefore, realistic model is called the shutter opening state.Along with voltage applies increase (intensity of the electric field that applies increases), the transmissivity of realistic model is about 0%.That is to say that along with voltage increases, the alinternal reflection angle of last prism array 216 is decided angle 26 from total internal reflection and spent and reduce and become less than the incident angle of image light.Therefore, be incident on image light on the prism array 216 by total reflection.Finally, realistic model becomes the shutter close state.In Figure 28, transmissivity applies according to voltage and changes.According to such result, continuously change voltage in the scope and apply by applying at given voltage, transmissivity can be by stepless control.

Simultaneously, forms by this way, promptly goes up the alinternal reflection angle of prism array 216 because external action is a voltage applies and become big if go up prism array 216, then with voltage apply relevant effect with about the description before of Figure 28 on the contrary.That is to say that when voltage is applied for approximately 0 the time, realistic model becomes the shutter close state, along with voltage applies increase, realistic model becomes the shutter opening state.

Figure 29 is a curve map, and be shown the time response that applies about voltage, and promptly the shutter state changes speed when voltage is applied to realistic model.

With reference to Figure 29, after voltage applies, increase about 80% in the 1ns internal transmission factor.This result means, the realistic model of shutter close state is changed into the shutter opening state only used about 1ns.Because it is reversible that this shutter state changes, and becomes shutter close state with about 1ns with the realistic model with the shutter opening state so the result of Figure 29 only means.Compare with the Flame Image Process high-speed shutter according to correlation technique, the shutter speed of about 1ns is exceedingly fast.Therefore, can change fast or modulation image.

Figure 30 to Figure 35 is a curve map, illustrates according to the shutter speed that is applied to the voltage type of realistic model.

Figure 30 to Figure 32 illustrates the transmission change when the waveform of applying voltage is square wave.Figure 33 to Figure 35 illustrates the transmission change when the waveform of applying voltage is sine wave.The waveform of voltage is not limited to square wave and sine wave.

With reference to Figure 30 to Figure 32, when applying voltage was square wave, up to about 10MHz, it was stable that transmissivity changes, and the transmissivity change distortion occurs at the 1GHz place.With reference to Figure 33 to 35, when applying voltage was sine wave, up to about 1GHz, it was stable that transmissivity changes.

Figure 36 is the figure that comprises the optical devices of optical shutter according to another one exemplary embodiment, and these optical devices can be the camera arrangements that is used to find range.

With reference to Figure 36, optical devices comprise light source 710, light source drive 720, controller of camera 730, optical image sensor 750, the first lens LZ1 and the second lens LZ2, wave filter 780 and optical shutter 770.The first lens LZ1, wave filter 780, optical shutter 770, the second lens LZ2 and optical image sensor 750 can be aimed at along single direction, and may reside on the same optical axis.Light head for target 700 emissions from light source 710 irradiations.Here, the light TL that is shone can be the light with specific wavelength, for example infrared ray.The light TL that is shone can be with pulsating wave or sinusoidal wave form irradiation.Light source 710 is controlled by light source drive 720.The operation of light source drive 720 is controlled by controller of camera 730.The operation of controller of camera 730 control optical shutters 770 and optical image sensor 750.Optical image sensor 750 can be CCD or CMOS.The first lens LZ1 collects to make that from the reflected light RL of target 700 reflected light RL can be suitable for being incident on the wave filter 780.Wave filter 780 is the bandpass filter that are used to remove the noise light except irradiates light TL, and can be the IR bandpass filter.The second lens LZ2 is used for the light from optical shutter 770 emissions is focused on the optical image sensor 750.Optical shutter 770 can be one of optical shutter of providing of previous exemplary embodiment.

Other device of the optical device that optical shutter according to one or more one exemplary embodiment can be applied to 3D camera, laser radar (LADAR) technology, comprises the display device of LCD (LCD) and need be used for quick control incident optical transmission and stop.

By using optical shutter, can utilize the electrooptical effect of solid electro-optic material, thereby optical shutter can be durable in use according to one or more one exemplary embodiment.

In addition, optical shutter can be operated with the no-delay gate speed of about 1ns, thereby image can be by fast processing.

In addition, optical shutter can be fabricated to thin plate, thereby optical shutter can be minimized.Because optical shutter has by by crystal growth material being grown to the structure that the little then processing of thin plate forms, so can reduce material cost and manufacturing cost.

Should be appreciated that one exemplary embodiment described herein should only understand on illustrative meaning, and be not used in restriction.The feature in each one exemplary embodiment or the description of aspect should it has been generally acknowledged that for other similar characteristics in other one exemplary embodiment or aspect be available.

Claims

1. an optical shutter comprises electro-optical medium, and this electro-optical medium is transparent and is in reactive solid, and described electro-optical medium comprises total internal reflection surface, this total internal reflection surface place alinternal reflection angle be transfused to change.

2. optical shutter as claimed in claim 1 also comprises first light path altering unit, and the path changing that this first light path altering unit will be passed the light of described electro-optical medium is that vertical incidence is on target object.

3. optical shutter as claimed in claim 2 also comprises being arranged at described electro-optical medium second light path altering unit before.

4. optical shutter as claimed in claim 2, wherein said electro-optical medium comprise first prism or first prism array, and described first light path altering unit comprises second prism or second prism array.

5. optical shutter as claimed in claim 4, wherein said electro-optical medium comprises first prism, described first light path altering unit comprises second prism, the shape of the shape of first prism of described electro-optical medium and second prism of described first light path altering unit is basic identical, and is provided with to such an extent that be mutually symmetrical.

6. optical shutter as claimed in claim 4, wherein said electro-optical medium comprises first prism array, this first prism array comprises a plurality of first microprisms, described first light path altering unit comprises second prism array, this second prism array comprises a plurality of second microprisms, the xsect symmetry of the xsect of a plurality of first microprisms of described electro-optical medium and a plurality of second microprisms of described first light path altering unit.

7. optical shutter as claimed in claim 6, wherein said a plurality of first microprisms and described a plurality of second microprism are annular microprism.

8. optical shutter as claimed in claim 3, wherein said second light path altering unit comprises lens unit, this lens unit is transferred to described electro-optical medium to the light that is incident on this second light path altering unit as directional light.

9. optical shutter as claimed in claim 4, wherein on the path of light, the gap with uniform thickness is between described electro-optical medium and described first light path altering unit.

10. optical shutter as claimed in claim 4, wherein light absorping film is attached on the surface of first prism of described electro-optical medium or on a surface of first prism array of described electro-optical medium, this surface of described first prism or described first prism array is by the incident light incident surface thereon of total reflection.

11. optical shutter as claimed in claim 9, wherein said gap comprises optical medium, and this optical medium has than air, described first prism and described second prism or described first prism array and the littler refractive index of described second prism array.

12. optical shutter as claimed in claim 1 comprises that also being arranged on described electro-optical medium travel path of incident light before changes the unit.

13. optical shutter as claimed in claim 12, wherein said travel path of incident light change the unit and comprise prism or prism array.

14. optical shutter as claimed in claim 12 is to be used to change enter shape that this travel path of incident light changes the incident light of unit and make this incident light be incident on unit on the described electro-optical medium as directional light thereby wherein said travel path of incident light changes the unit.

15. optical shutter as claimed in claim 1, wherein said electro-optical medium are prism or prism array, incident light based on described input by described prism or prism array total reflection or transmission.

16. optical shutter as claimed in claim 15, the light incident surface of wherein said prism or the light incident surface of described microprism tilt with respect to described incident light.

17. optical shutter as claimed in claim 13, wherein said prism array comprise the microprism of a plurality of bar shapeds or the microprism of a plurality of annulars.

18. optical shutter as claimed in claim 1, wherein said input are by applying the electric field that voltage forms.

19. optical shutter as claimed in claim 15, wherein light absorping film is arranged at a surface of described prism or in a surface of described prism array, this surface of described prism or prism array is by the incident light incident surface thereon of total reflection.

20. optical shutter as claimed in claim 16, wherein light absorping film is arranged at the surface of prism array of described light path altering unit or the surface of prism, and the surface of described prism or prism array is not in the path of light.

21. optical shutter as claimed in claim 1, wherein said electro-optical medium is incident on thereon object tilt with respect to the light from the emission of this electro-optical medium.

22. a camera comprises optical shutter, wherein said optical shutter comprises the described optical shutter of claim 1.

23. a camera comprises optical shutter, wherein said optical shutter comprises the described optical shutter of claim 2.

24. camera as claimed in claim 23 also comprises being arranged at described electro-optical medium second light path altering unit before.

25. camera as claimed in claim 23, wherein said electro-optical medium comprise first prism or first prism array, described first light path altering unit comprises second prism or second prism array.

26. a display device comprises optical shutter, wherein said optical shutter comprises the described optical shutter of claim 1.

27. a display device comprises optical shutter, wherein said optical shutter comprises the described optical shutter of claim 2.

28. display device as claimed in claim 26 comprises that also being arranged at described electro-optical medium travel path of incident light before changes the unit.

29. display device as claimed in claim 27 also comprises being arranged at described electro-optical medium second light path altering unit before.

30. display device as claimed in claim 27, wherein said electro-optical medium comprise first prism or first prism array, described first light path altering unit comprises second prism or second prism array.

31. the method for an operating optical shutter, this optical shutter comprises electro-optical medium, this electro-optical medium is transparent and is in reactive solid, and this electro-optical medium comprises total internal reflection surface, this total internal reflection surface place alinternal reflection angle be transfused to change, described method comprises by applying voltage changes described electro-optical medium to described electro-optical medium alinternal reflection angle.

32. the method for operating optical shutter as claimed in claim 31 also comprises by applying voltage continuously changes described electro-optical medium to described electro-optical medium alinternal reflection angle continuously.

33. the method for operating optical shutter as claimed in claim 31, the alinternal reflection angle of wherein said electro-optical medium reduces by applying voltage.

34. the method for operating optical shutter as claimed in claim 31, the alinternal reflection angle of wherein said electro-optical medium increases by applying voltage.

35. the method for operating optical shutter as claimed in claim 31, the incident angle that wherein is incident on the light on the described electro-optical medium is decided the angle less than the total internal reflection of described electro-optical medium, and greater than by applying the minimum alinternal reflection angle that voltage forms.

36. the method for operating optical shutter as claimed in claim 31, the incident angle that wherein is incident on the light on the described electro-optical medium is decided the angle greater than the total internal reflection of described electro-optical medium, and less than by applying the maximum alinternal reflection angle that voltage forms.

37. optical devices comprise:

Refracting element has one of at least two refractive indexes, and when first input was received, this refracting element had in described at least two refractive indexes, and when second input was received, this refracting element had another in described at least two refractive indexes; And

Imageing sensor, this imageing sensor can be operated the light that receives by described refracting element refraction and transmission,

Wherein when described first input was received, described refracting element reflected light towards described imageing sensor, and when described second input was received, described refracting element reflected light away from described imageing sensor.

38. optical devices as claimed in claim 37, wherein said refracting element comprises optical input surface and light output surface, and one of the described optical input surface of wherein said refracting element and described smooth output surface are with respect to only tilting of being received by described refracting element and out of plumb.

39. optical devices as claimed in claim 38 also comprise the collimation unit, this collimation unit outputs to described refracting element with the optical alignment and the light that will collimate.