CN102064186A - 半导体结构及其形成方法 - Google Patents

半导体结构及其形成方法 Download PDF

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Publication number
CN102064186A
CN102064186A CN 201010546347 CN201010546347A CN102064186A CN 102064186 A CN102064186 A CN 102064186A CN 201010546347 CN201010546347 CN 201010546347 CN 201010546347 A CN201010546347 A CN 201010546347A CN 102064186 A CN102064186 A CN 102064186A
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porous structure
structure layer
layer
porous
material substrate
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CN 201010546347
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Chinese (zh)
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王楚雯
赵东晶
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Priority to CN 201010546347 priority Critical patent/CN102064186A/zh
Publication of CN102064186A publication Critical patent/CN102064186A/zh
Priority to PCT/CN2011/082174 priority patent/WO2012065536A1/fr
Pending legal-status Critical Current

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CN 201010546347 2010-11-15 2010-11-15 半导体结构及其形成方法 Pending CN102064186A (zh)

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CN 201010546347 CN102064186A (zh) 2010-11-15 2010-11-15 半导体结构及其形成方法
PCT/CN2011/082174 WO2012065536A1 (fr) 2010-11-15 2011-11-14 Structure semi-conductrice et son procédé de formation

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CN 201010546347 CN102064186A (zh) 2010-11-15 2010-11-15 半导体结构及其形成方法

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CN102064186A true CN102064186A (zh) 2011-05-18

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231414A (zh) * 2011-06-03 2011-11-02 王楚雯 Led的形成方法
CN102332508A (zh) * 2011-09-09 2012-01-25 王楚雯 半导体结构及其形成方法
WO2012065536A1 (fr) * 2010-11-15 2012-05-24 Chuwen Wang Structure semi-conductrice et son procédé de formation
WO2012109797A1 (fr) * 2011-02-18 2012-08-23 晶元光电股份有限公司 Elément photoélectrique et méthode de fabrication de celui-ci
CN111477535A (zh) * 2019-12-31 2020-07-31 厦门市三安集成电路有限公司 一种复合硅衬底及其制备方法和应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221205A (zh) * 1997-12-26 1999-06-30 索尼株式会社 半导体基片和薄膜半导体部件及它们的制造方法
CN1228607A (zh) * 1998-02-18 1999-09-15 佳能株式会社 复合部件及其分离方法和半导体衬底的制备方法
CN1249531A (zh) * 1998-09-04 2000-04-05 佳能株式会社 半导体衬底的制造工艺
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6375738B1 (en) * 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
CN101728249A (zh) * 2009-11-20 2010-06-09 清华大学 硅片上外延化合物半导体材料的过渡层单晶制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221205A (zh) * 1997-12-26 1999-06-30 索尼株式会社 半导体基片和薄膜半导体部件及它们的制造方法
CN1228607A (zh) * 1998-02-18 1999-09-15 佳能株式会社 复合部件及其分离方法和半导体衬底的制备方法
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
CN1249531A (zh) * 1998-09-04 2000-04-05 佳能株式会社 半导体衬底的制造工艺
US6375738B1 (en) * 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
CN101728249A (zh) * 2009-11-20 2010-06-09 清华大学 硅片上外延化合物半导体材料的过渡层单晶制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012065536A1 (fr) * 2010-11-15 2012-05-24 Chuwen Wang Structure semi-conductrice et son procédé de formation
WO2012109797A1 (fr) * 2011-02-18 2012-08-23 晶元光电股份有限公司 Elément photoélectrique et méthode de fabrication de celui-ci
CN102231414A (zh) * 2011-06-03 2011-11-02 王楚雯 Led的形成方法
CN102332508A (zh) * 2011-09-09 2012-01-25 王楚雯 半导体结构及其形成方法
CN111477535A (zh) * 2019-12-31 2020-07-31 厦门市三安集成电路有限公司 一种复合硅衬底及其制备方法和应用

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Application publication date: 20110518