CN102064186A - 半导体结构及其形成方法 - Google Patents
半导体结构及其形成方法 Download PDFInfo
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CN 201010546347 CN102064186A (zh) | 2010-11-15 | 2010-11-15 | 半导体结构及其形成方法 |
PCT/CN2011/082174 WO2012065536A1 (fr) | 2010-11-15 | 2011-11-14 | Structure semi-conductrice et son procédé de formation |
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CN 201010546347 CN102064186A (zh) | 2010-11-15 | 2010-11-15 | 半导体结构及其形成方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102231414A (zh) * | 2011-06-03 | 2011-11-02 | 王楚雯 | Led的形成方法 |
CN102332508A (zh) * | 2011-09-09 | 2012-01-25 | 王楚雯 | 半导体结构及其形成方法 |
WO2012065536A1 (fr) * | 2010-11-15 | 2012-05-24 | Chuwen Wang | Structure semi-conductrice et son procédé de formation |
WO2012109797A1 (fr) * | 2011-02-18 | 2012-08-23 | 晶元光电股份有限公司 | Elément photoélectrique et méthode de fabrication de celui-ci |
CN111477535A (zh) * | 2019-12-31 | 2020-07-31 | 厦门市三安集成电路有限公司 | 一种复合硅衬底及其制备方法和应用 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1221205A (zh) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | 半导体基片和薄膜半导体部件及它们的制造方法 |
CN1228607A (zh) * | 1998-02-18 | 1999-09-15 | 佳能株式会社 | 复合部件及其分离方法和半导体衬底的制备方法 |
CN1249531A (zh) * | 1998-09-04 | 2000-04-05 | 佳能株式会社 | 半导体衬底的制造工艺 |
US6376859B1 (en) * | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
US6375738B1 (en) * | 1999-03-26 | 2002-04-23 | Canon Kabushiki Kaisha | Process of producing semiconductor article |
CN101728249A (zh) * | 2009-11-20 | 2010-06-09 | 清华大学 | 硅片上外延化合物半导体材料的过渡层单晶制备方法 |
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- 2010-11-15 CN CN 201010546347 patent/CN102064186A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1221205A (zh) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | 半导体基片和薄膜半导体部件及它们的制造方法 |
CN1228607A (zh) * | 1998-02-18 | 1999-09-15 | 佳能株式会社 | 复合部件及其分离方法和半导体衬底的制备方法 |
US6376859B1 (en) * | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
CN1249531A (zh) * | 1998-09-04 | 2000-04-05 | 佳能株式会社 | 半导体衬底的制造工艺 |
US6375738B1 (en) * | 1999-03-26 | 2002-04-23 | Canon Kabushiki Kaisha | Process of producing semiconductor article |
CN101728249A (zh) * | 2009-11-20 | 2010-06-09 | 清华大学 | 硅片上外延化合物半导体材料的过渡层单晶制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012065536A1 (fr) * | 2010-11-15 | 2012-05-24 | Chuwen Wang | Structure semi-conductrice et son procédé de formation |
WO2012109797A1 (fr) * | 2011-02-18 | 2012-08-23 | 晶元光电股份有限公司 | Elément photoélectrique et méthode de fabrication de celui-ci |
CN102231414A (zh) * | 2011-06-03 | 2011-11-02 | 王楚雯 | Led的形成方法 |
CN102332508A (zh) * | 2011-09-09 | 2012-01-25 | 王楚雯 | 半导体结构及其形成方法 |
CN111477535A (zh) * | 2019-12-31 | 2020-07-31 | 厦门市三安集成电路有限公司 | 一种复合硅衬底及其制备方法和应用 |
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Application publication date: 20110518 |