CN102077356A - 用以制造高效能金属氧化物和金属氮氧化物薄膜晶体管的栅极介电层处理 - Google Patents
用以制造高效能金属氧化物和金属氮氧化物薄膜晶体管的栅极介电层处理 Download PDFInfo
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Abstract
本发明实施例大体上包括薄膜晶体管(TFT)和其制造方法。TFT的栅极介电层会影响TFT的临界电压。经由在沉积主动通道材料前处理栅极介电层,可改进临界电压。处理栅极介电层的一方法涉及使栅极介电层接触N2O气体。处理栅极介电层的另一方法涉及使栅极介电层接触N2O等离子体。氧化硅虽未实际应用到硅基TFT的栅极介电层,但其用于金属氧化物TFT时,也可改进临界电压。经由处理栅极介电层及/或使用氧化硅,可改进TFT的临界电压。
Description
技术领域
本发明的实施例大体上是关于制造薄膜晶体管(TFT)的方法。
背景技术
因TFT阵列可用在常用于计算机和电视平面面板的液晶主动矩阵显示器(LCD),故现时对这些装置特别感兴趣。LCD还设有发光二极管(LED)做为背光。另外,有机发光二极管(OLED)已用于主动矩阵显示器,且这些OLED需要TFT来处理显示器的动作。
以非晶硅制作的TFT已成为平面面板显示器产业的关键组件。可惜非晶硅有其限制,例如低迁移率。OLED所需的迁移率至少是非晶硅所能达到的十倍以上。此外,OLED显示器为电流驱动组件,故易受Vth漂移影响。高电流或高偏压电压下引起非晶硅TFT的Vth漂移乃急待解决的问题。另一方面,多晶硅的迁移率比非晶硅高。多晶硅为结晶体,其会造成局部沉积不均匀。制造多晶硅膜需进行复杂的退火工艺,因此使用多晶硅来制造大面积显示器比起非晶硅更困难、也更昂贵。由于非晶硅的限制,导致OLED发展渐缓。
近年来已开发透明TFT,其中氧化锌当作主动通道层。氧化锌为化合物半导体,其可在相当低的沉积温度下长成结晶材料至如玻璃和塑料等各种基板上。
故此技艺需要具非晶主动通道且迁移率高的TFT。
发明内容
本发明大体上包括薄膜晶体管(TFT)和其制造方法。TFT的栅极介电层会影响TFT的临界电压。经由在沉积主动通道材料前处理栅极介电层,可改进临界电压。处理栅极介电层的一方法涉及使栅极介电层接触一氧化二氮(N2O)气体。处理栅极介电层的另一方法涉及使栅极介电层接触N2O等离子体。氧化硅虽未实际应用到硅基TFT的栅极介电层,但其用于金属氧化物TFT时,也可改进临界电压。经由处理栅极介电层及/或使用氧化硅,可改进TFT的次临界斜率和临界电压。
在一实施例中,揭露一种TFT制造方法。方法包括沉积栅极介电层至栅极电极和基板上、使栅极介电层接触N2O等离子体或其它等离子体而进行处理、沉积半导体层至栅极介电层上、沉积导电层至半导体层上、以及蚀刻导电层和半导体层而界定源极与漏极和主动通道。半导体层包括氧、及一或多个选自由锌、镓、铟、镉、锡和其组合构成群组的元素,或者半导体层包括氮、氧、及一或多个选自由锌、铟、锡、镓、镉和其组合构成群组的元素。主动通道为半导体层的一部分。
在另一实施例中,揭露一种TFT制造方法。方法包括沉积氮化硅层至栅极电极和基板上、沉积氧化硅层至氮化硅层上、沉积半导体层至氧化硅层上、沉积导电层至半导体层上、以及蚀刻导电层而界定源极与漏极和主动通道。半导体层包括氧、及一或多个选自由锌、镓、铟、镉、锡和其组合构成群组的元素,或者半导体层包括氮、氧、及一或多个选自由锌、铟、锡、镓、镉和其组合构成群组的元素。主动通道为半导体层的一部分。
在又一实施例中,揭露一种TFT制造方法。方法包括沉积氧化硅层至栅极电极和基板上、沉积半导体层至氧化硅层上、沉积导电层至半导体层上、以及蚀刻导电层而界定源极与漏极和主动通道。半导体层包括氧、及一或多个选自由锌、镓、铟、镉、锡和其组合构成群组的元素,或者半导体层包括氮、氧、及一或多个选自由锌、铟、锡、镓、镉和其组合构成群组的元素。主动通道暴露出部分半导体层。
在再一实施例中,揭露一种TFT。TFT包括氧化硅层,位于栅极电极和基板上、半导体层,位于氧化硅层上、以及源极与漏极,位于半导体层上。半导体层包括氧、及一或多个选自由锌、镓、铟、镉、锡和其组合构成群组的元素,或者半导体层包括氮、氧、及一或多个选自由锌、铟、锡、镓、镉和其组合构成群组的元素。源极和漏极彼此相隔而暴露出部分半导体层。
附图说明
为让本发明的上述特征更明显易懂,可配合参考实施例说明,其部分乃绘示如附图式。须注意的是,虽然所附图式揭露本发明特定实施例,但其并非用以限定本发明的精神与范围,任何熟习此技艺者,当可作各种的更动与润饰而得等效实施例。
图1A-1F为根据本发明一实施例的TFT 100于不同制造阶段的截面图。
图2为根据本发明另一实施例的TFT 200的截面图。
图3显示根据本发明一实施例,在沉积主动层材料前,等离子体处理栅极介电层的作用曲线图。
图4A显示根据本发明一实施例,栅极介电层的沉积温度的作用曲线图。
图4B显示根据本发明一实施例,在沉积主动层材料前,以NH3等离子体处理及退火处理栅极介电层的作用曲线图。
图5显示根据本发明一实施例,在沉积主动层材料前,以N2O等离子体处理栅极介电层的作用曲线图。
图6A及6B显示根据本发明一实施例,在沉积主动层材料前,暴露于N2O中及N2O等离子体处理栅极介电层的作用曲线图。
图7A及7B显示根据本发明一实施例,在沉积主动层材料前,接触N2O的温度和N2O等离子体处理栅极介电层的温度的作用曲线图。
为助于了解,各图中共通的组件以相同的组件符号表示。应理解某一实施例所揭露的组件当可用于其它实施例,而不需特别提及。
具体实施方式
本发明大体上包括薄膜晶体管(TFT)和其制造方法。TFT的栅极介电层会影响TFT的临界电压。经由在沉积主动通道材料前处理栅极介电层,可改进临界电压。处理栅极介电层的一方法涉及在高于200℃的温度下,使栅极介电层接触一氧化二氮(N2O)气体。处理栅极介电层的另一方法涉及使栅极介电层接触N2O等离子体。氧化硅虽未实际应用到硅基TFT的栅极介电层,但其用于金属氧化物TFT时,也可改进临界电压。经由处理栅极介电层及/或使用氧化硅,可改进TFT的临界电压。氧化锌基半导体可透过掺杂制作成非晶材料。如此可避免晶粒结构引起的不均匀问题。如氧化锌基半导体的非晶半导体更易施行于目前采用底栅极TFT结构的显示器制造工艺。
图1A-1F为根据本发明一实施例的TFT 100于不同制造阶段的截面图。TFT包含基板102。在一实施例中,基板102包含玻璃。在另一实施例中,基板102包含聚合物。在又一实施例中,基板102包含塑料。在再一实施例中,基板102包含金属。
栅极电极104形成在基板上。栅极电极104包含导电层,用以控制TFT内的电荷载子移动。栅极电极104可包含金属,例如铝、钨、铬、钽或其组合。栅极电极104可以传统沉积技术形成,包括溅射、微影和蚀刻。经由毯覆沉积导电层至基板102上可形成栅极电极104。导电层可以溅射沉积而得。随后,光阻层沉积在导电层上。光阻层经图案化形成罩幕。经由蚀去导电层未遮蔽的区域并留下基板102上的栅极电极104可形成栅极电极104。
栅极介电层106沉积于栅极电极104上。栅极介电层106会影响TFT的次临界区参数或斜率和临界电压。就硅基TFT(即具如非晶硅的硅基半导体层的TFT)而言,栅极介电层106不含氧化硅,因其将使得TFT具有相当正的Vth和低迁移率。但就金属氧化物TFT而言,已发现氧化硅可当作有效栅极介电层106。氧化硅中的氧不会大幅改变金属氧化物层或界面,故TFT不会失效。在一实施例中,栅极介电层106包含氮化硅。在另一实施例中,栅极介电层106包含氧化硅。在又一实施例中,栅极介电层106包含二氧化硅。在再一实施例中,栅极介电层106包含氮氧化硅。在另一实施例中,栅极介电层106包含氧化铝(Al2O3)。栅极介电层106可以熟知的沉积技术沉积,包括等离子体增强化学气相沉积(PECVD)。在一实施例中,栅极介电层106是以物理气相沉积(PVD)沉积而得。
沉积栅极介电层106后,处理栅极介电层106。各种处理栅极介电层106的技术将详述于下。技术之一涉及使栅极介电层106接触等离子体108,以钝化栅极介电层106的表面。
处理栅极介电层106后,沉积半导体层110于其上。半导体层110将变成包含最终TFT结构的主动沟道的材料。半导体层110包含氧、及一或多个选自由锌、镓、铟、镉、锡和其组合构成群组的元素,或包含氮、氧、及一或多个选自由锌、铟、锡、镓、镉和其组合构成群组的元素。在一实施例中,半导体层110包含氧、氮、及一或多个具占满s轨域与占满d轨域的元素。在另一实施例中,半导体层110包含氧、氮、及一或多个具占满f轨域的元素。在又一实施例中,半导体层110包含氧、氮、及一或多个二价元素。在再一实施例中,半导体层110包含氧、氮、及一或多个三价元素。在另一实施例中,半导体层110包含氧、氮、及一或多个四价元素。
半导体层110还可包含掺质。适用的掺质包括铝(Al)、锡(Sn)、镓(Ga)、钙(Ca)、硅(Si)、钛(Ti)、铜(Cu)、锗(Ge)、铟(In)、镍(Ni)、锰(Mn)、铬(Cr)、钒(V)、镁(Mg)、氮化硅(SixNy)、氧化铝(AlxOy)和碳化硅(SiC)。在一实施例中,掺质包含铝。在另一实施例中,掺质包含锡。
半导体层110的例子包括ZnOxNy、SnOxNy、InOxNy、CdOxNy、GaOxNy、ZnSnOxNy、ZnInOxNy、ZnCdOxNy、ZnGaOxNy、SnInOxNy、SnCdOxNy、SnGaOxNy、InCdOxNy、InGaOxNy、CdGaOxNy、ZnSnInOxNy、ZnSnCdOxNy、ZnSnGaOxNy、ZnInCdOxNy、ZnInGaOxNy、ZnCdGaOxNy、SnInCdOxNy、SnInGaOxNy、SnCdGaOxNy、InCdGaOxNy、ZnSnInCdOxNy、ZnSnInGaOxNy、ZnInCdGaOxNy和SnInCdGaOxNy。半导体层110的例子包括以下掺杂材料:ZnOxNy:Al、ZnOxNy:Sn、SnOxNy:Al、InOxNy:Al、InOxNy:Sn、CdOxNy:Al、CdOxNy:Sn、GaOxNy:Al、GaOxNy:Sn、ZnSnOxNy:Al、ZnInOxNy:Al、ZnInOxNy:Sn、ZnCdOxNy:Al、ZnCdOxNy:Sn、ZnGaOxNy:Al、ZnGaOxNy:Sn、SnInOxNy:Al、SnCdOxNy:Al、SnGaOxNy:Al、InCdOxNy:Al、InCdOxNy:Sn、InGaOxNy:Al、InGaOxNy:Sn、CdGaOxNy:Al、CdGaOxNy:Sn、ZnSnInOxNy:Al、ZnSnCdOxNy:Al、ZnSnGaOxNy:Al、ZnInCdOxNy:Al、ZnInCdOxNy:Sn、ZnInGaOxNy:Al、ZnInGaOxNy:Sn、ZnCdGaOxNy:Al、ZnCdGaOxNy:Sn、SnInCdOxNy:Al、SnInGaOxNy:Al、SnCdGaOxNy:Al、InCdGaOxNy:Al、InCdGaOxNy:Sn、ZnSnInCdOxNy:Al、ZnSnInGaOxNy:Al、ZnInCdGaOxNy:Al、ZnInCdGaOxNy:Sn和SnInCdGaOxNy:Al。
半导体层110可以溅射沉积而得。在一实施例中,溅射靶材包含金属,例如锌、镓、锡、镉、铟或其组合。溅射靶材另可包含掺质。含氧气体和含氮气体引进腔室,藉以反应溅射沉积半导体层110。在一实施例中,含氮气体包含氮气(N2)。在另一实施例中,含氮气体包含一氧化二氮(N2O)、氨气(NH3)或其组合。在一实施例中,含氧气体包含氧气(O2)。在另一实施例中,含氧气体包含N2O。含氮气体的氮和含氧气体的氧与溅射靶材的金属反应形成包含金属、氧、氮、和选择性包含掺质的半导体材料于基板上。在一实施例中,含氮气体和含氧气体为不同气体。在另一实施例中,含氮气体和含氧气体包含相同气体。溅射期间,诸如二硼烷(B2H6)、二氧化碳(CO2)、一氧化碳(CO)、甲烷(CH4)和其组合的添加剂也可额外提供给腔室。
沉积半导体层110后,沉积导电层112。在一实施例中,导电层112包含金属,例如铝、钨、钼、铬、钽和其组合。导电层112可以溅射沉积而得。
沉积导电层112后,蚀去部分导电层112,以界定源极114、漏极116和主动通道118。部分半导体层110亦被蚀刻移除。尽管图未绘示,沉积导电层前,尚可沉积蚀刻终止层至半导体层110上。蚀刻终止层用来保护主动通道118,以免其于蚀刻时不当接触等离子体。
图2为根据本发明另一实施例的TFT 200的截面图。TFT 200包括位于基板202上的栅极电极204。其尚有源极214、漏极216、主动通道216和半导体层210。其还包括多层栅极介电层。栅极介电层具有第一栅极介电层206和第二栅极介电层208。在一实施例中,第一栅极介电层206包含氮化硅。在一实施例中,第二栅极介电层208包含氧化硅。如上所述,氧化硅虽未应用到硅基TFT,但仍有益于金属氧化物TFT。
实施例
表I列出数种TFT的比较结果,除了处理栅极介电层的方法不同外,其实质相同。各实施例的栅极介电层采用氮化硅。
表I
实施例1
备有氮化硅栅极介电层的TFT不加以处理。沉积栅极介电层后,半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为9.78平方公分/伏特-秒(cm2/V-s)、次临界斜率为2V/dec。
实施例2
TFT备有氮化硅栅极介电层和氧化硅层沉积其上。栅极介电层不进一步处理。沉积氧化硅层后,半导体层沉积其上,且不让栅极介电层或氧化硅层接触大气。TFT的迁移率为7.65cm2/V-s、次临界斜率为1.48V/dec。
实施例3
TFT备有氮化硅栅极介电层并接触N2O等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为7.84cm2/V-s、次临界斜率为1.42V/dec。
实施例4
TFT备有氮化硅栅极介电层并接触PH3等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率小于1cm2/V-s、次临界斜率大于4V/dec。
实施例5
TFT备有氮化硅栅极介电层并接触NH3等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为6.28cm2/V-s、次临界斜率为2.34V/dec。
实施例6
TFT备有氮化硅栅极介电层并接触H2等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为2.5cm2/V-s、次临界斜率为2.8V/dec。
实施例7
TFT备有氮化硅栅极介电层并接触氩等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为2.9cm2/V-s、次临界斜率为2.8V/dec。
实施例8
TFT备有氮化硅栅极介电层并接触大气。半导体层接着沉积在氮化硅层上。TFT的迁移率为6.2cm2/V-s、次临界斜率为1.84V/dec。
实施例9
TFT备有氮化硅栅极介电层并接触N2等离子体。半导体层沉积其上,且不让栅极介电层接触大气。TFT的迁移率为2.9cm2/V-s、次临界斜率为2.8V/dec。
如上述实施例所示,处理栅极介电层会影响次临界斜率和迁移率。氮化硅层附加氧化硅层将制造具有良好迁移率和极佳次临界斜率的TFT。此外,以N2O等离子体处理将制造具有良好迁移率和极佳次临界斜率的TFT。虽然氧化硅TFT和以N2O等离子体处理的迁移率均小于未经处理的TFT,但次临界斜率明显更好。反之,以氩等离子体、H2等离子体、NH3等离子体或N2等离子体处理将导致次临界斜率变得更糟。故处理栅极介电层的方式会影响TFT的效能。成信N2O等离子体中的氧会减少氮化硅或打断硅氮键及钝化表面。
图3显示根据本发明一实施例,在沉积主动层材料前,等离子体处理栅极介电层的作用曲线图。图3显示四种不同结果,包括未处理、接触N2O等离子体、施予N2O等离子体后接触H2等离子体、和施予N2O等离子体后接触NH3等离子体。虽然仅以H2等离子体或NH3等离子体处理栅极介电层不会提供如上述实施例般的好结果,但施予N2O等离子体后接触H2等离子体或NH3等离子体能产生媲美只以N2O等离子体处理的次临界斜率。
此亦研究额外处理栅极介电层。例如,栅极介电层接触不含等离子体的N2O气体后、接着接触N2O等离子体。
图4A显示根据本发明一实施例,栅极介电层的沉积温度的作用曲线图。如图4A所示,相较于在350℃下沉积的氮化硅栅极介电层或在400℃下沉积且经退火处理的氧化硅栅极介电层,在200℃下沉积的氮化硅栅极介电层有更正的Vth。然氧化硅TFT的次临界斜率较小。
图4B显示根据本发明一实施例,以NH3等离子体处理栅极介电层的作用曲线图。如图4B所示,相较于在350℃下沉积且暴露于NH3中的氮化硅栅极介电层,在200℃下沉积且暴露于NH3中的氮化硅栅极介电层有更正的Vth和较小的次临界斜率。
图5显示根据本发明一实施例,在沉积主动层材料前,以N2O等离子体处理栅极介电层的作用曲线图。表II列出图5的三种TFT的迁移率和次临界斜率值。
表II
在图5的TFT中,各TFT设有在200℃下沉积的氮化硅栅极介电层。TFT 2是在沉积半导体层前,以N2O等离子体处理栅极介电层而制得。相较于在沉积半导体层前未以N2O等离子体处理的TFT 1和TFT 3,TFT 2有较高的迁移率和较小的次临界斜率。未经等离子体处理的TFT差异在于TFT 3已老化4个月。
图6A及6B显示根据本发明一实施例,在沉积主动层材料前,暴露于N2O中及N2O等离子体处理栅极介电层的作用曲线图。表III列出图6A及6B的四种基板的次临界斜率和饱和迁移率。
表III
N2O处理包含使沉积的栅极介电层接触N2O气体。N2O清洁包含使沉积的栅极介电层接触N2O等离子体。N2O清洁的作用比N2O处理强。但N2O处理会降低Ioff。N2O清洁和N2O处理均会降低次临界斜率。同时进行N2O清洁和N2O处理时,次临界斜率降低更甚。同时进行N2O清洁和N2O处理时,饱和迁移率亦大幅下降。如表III所示,进行N2O清洁获得的10Vds下的Vg远大于未处理或N2O处理获得的Vg。
图7A及7B显示根据本发明一实施例,在沉积主动层材料前,接触N2O的温度和N2O等离子体处理栅极介电层的温度的作用曲线图。图7A显示在200℃下接触N2O气体及/或N2O等离子体处理的结果。图7B显示在300℃下接触N2O气体及/或N2O等离子体处理的结果。在栅极介电层接触N2O气体的情况下,先进行N2O等离子体处理。接触N2O气体对次临界斜率的影响很小。
虽然上述已以N2O为例当作等离子体处理及气体接触的接触气体,但含氧气体也有同样的效果。例如,当理解O2、CO2和其组合可做为接触气体或等离子体气体。基板温度可维持呈室温至约400℃。在一实施例中,室温为约25℃。处理步骤可实行多个步骤,且各步骤利用不同的处理气体。例如,使用含氧气体(如N2O、O2或CO2)的初步处理可用于第一处理步骤。接着,使用不同的气体(如H2、PH3和其组合)进行第二处理步骤。在一实施例中,二步骤包含等离子体接触。在另一实施例中,第一步骤包含等离子体处理,第二步骤包含不使用等离子体的气体接触。在又一实施例中,进行超过两个以上的步骤。
经由将氧化硅层设于栅极介电层上、或以含氧气体处理栅极介电层,可改进TFT的次临界斜率及/或迁移率。
虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟习此技艺者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰,因此本发明的保护范围当视权利要求书所界定者为准。
Claims (15)
1.一种薄膜晶体管制造方法,该方法包含:
沉积一栅极介电层至一栅极电极和一基板上;
使该栅极介电层接触一含氧等离子体;
沉积一半导体层至该栅极介电层上,该半导体层包含氧、氮、及一或多个选自由锌、镓、铟、镉、锡和其组合构成的群组的元素;
沉积一导电层至该半导体层上;以及
蚀刻该导电层而界定一源极与一漏极和一主动沟道,该主动沟道暴露出一部分的该半导体层。
2.如权利要求1所述的方法,其中该栅极介电层包含氮化硅、氧化硅、或由氮化硅与氧化硅组成的一双层。
3.如权利要求1所述的方法,更包含在使该栅极介电层接触该含氧等离子体后,使该栅极介电层接触一氢等离子体。
4.如权利要求1所述的方法,其中该半导体层是利用溅射沉积而得,该接触步骤是在与沉积该栅极介电层相同位置处进行,且其中该含氧等离子体包含N2O。
5.一种薄膜晶体管制造方法,该方法包含:
沉积一氮化硅层至一栅极电极和一基板上;
沉积一氧化硅层至该氮化硅层上;
沉积一半导体层至该氧化硅层上,该半导体层包含氧、氮、及一或多个选自由锌、镓、铟、镉、锡和其组合构成的群组的元素;
沉积一导电层至该半导体层上;以及
蚀刻该导电层而界定一源极与一漏极和一主动沟道,该主动沟道暴露出一部分的该半导体层。
6.如权利要求5所述的方法,更包含:
使该氧化硅层接触一N2O等离子体;及
在使该氧化硅层接触该N2O等离子体后,使该氧化硅层接触一氢等离子体。
7.如权利要求5所述的方法,更包含使该氧化硅层接触一N2O等离子体,其中该接触步骤是在与沉积该氧化硅层相同位置处进行。
8.如权利要求5所述的方法,更包含:
使该氧化硅层接触一N2O等离子体;及
在接触该N2O等离子体后,使该氧化硅层接触一氧等离子体。
9.如权利要求5所述的方法,其中该半导体层是利用溅射沉积而得。
10.一种薄膜晶体管制造方法,该方法包含:
沉积一氧化硅层至一栅极电极和一基板上;
沉积一半导体层至该氧化硅层上,该半导体层包含氧、氮、及一或多个选自由锌、镓、铟、镉、锡和其组合构成的群组的元素;
沉积一导电层至该半导体层上;以及
蚀刻该导电层而界定一源极与一漏极和一主动沟道,该主动沟道暴露出一部分的该半导体层。
11.如权利要求10所述的方法,更包含:
使该氧化硅层接触一N2O等离子体;及
在使该氧化硅层接触该N2O等离子体后,使该氧化硅层接触一氢等离子体,其中该半导体层是利用溅射沉积而得。
12.如权利要求10所述的方法,更包含使该氧化硅层接触一N2O等离子体,其中该接触步骤是在与沉积该氧化硅层相同位置处进行,且其中该半导体层是利用溅射沉积而得。
13.如权利要求10所述的方法,更包含:
使该氧化硅层接触一N2O等离子体;及
在接触该N2O等离子体后,使该氧化硅层接触一氧等离子体,其中该半导体层是利用溅射沉积而得。
14.一种薄膜晶体管,其至少包含:
一氧化硅层,位于一栅极电极和一基板上;
一半导体层,位于该氧化硅层上,该半导体层包含氧、氮、及一或多个选自由锌、镓、铟、镉、锡和其组合构成的群组的元素;以及
一源极与一漏极,位于该半导体层上,该源极和该漏极彼此相隔而暴露出一部分的该半导体层。
15.如权利要求14所述的晶体管,更包含一氮化硅层,位于该栅极电极和该基板的上且位于该氧化硅层的下。
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